t owards sensor decision for atlas ibl
DESCRIPTION
T owards Sensor Decision for ATLAS IBL. LHCC Upgrade session CERN, June, 14 th 2011 G. Darbo – INFN / Genova Indico agenda: https://indico.cern.ch/conferenceDisplay.py?confId= 141306. Sensors Designs for IBL. Not enough data available to make decision on sensors - PowerPoint PPT PresentationTRANSCRIPT
Towards Sensor Decision for ATLAS IBLG. Darbo – INFN / Genova LHCC Upgrade session, 14 June 2011o
Towards Sensor Decision for ATLAS IBL
LHCC Upgrade sessionCERN, June, 14th 2011
G. Darbo – INFN / Genova
Indico agenda:• https://indico.cern.ch/conferenceDisplay.py?confId=141306
Towards Sensor Decision for ATLAS IBLG. Darbo – INFN / Genova LHCC Upgrade session, 14 June 20112
Sensors Designs for IBL• Not enough data available to make decision on sensors
Planar: need more measurement with full radiation dose3D: yield and production are the major unknownsBoth: need adequate statistics on irradiated chip-sensor
assemblies
• Following discussion in the IBL community and sensor R&D collaborations, IBL Management and Institute Board decided to restrict the IBL design to two:
• Planar silicon n-in-n, 200µm thickness, slim edge from CiS • 3D silicon, double side, slim edge from CNM + FBK
• To comply with the IBL speedup schedule:• Complete the prototype program while launching
pre-production• Enough sensors (to start module production) will be ready
of the selected technology when decision will be taken
Wafer to be produced (2x good tiles of IBL modules):• CiS: with the measured yield (good statistics available) – 6 batches of
25 wafers satisfy IBL requirements• CNM+FBK: if yield is 50% are necessary 9/10 batches. If yield is 60%
are necessary 8 batches.• Pre-production started: 50 planar (CiS) & 50 3D sensors (FBK + CNM)
CNM/FBK wafer mask8 SC tiles/wafer
CiS wafer mask4 DC tiles/wafer
Towards Sensor Decision for ATLAS IBLG. Darbo – INFN / Genova LHCC Upgrade session, 14 June 20113
Sensor Review Sensor review on July 4th and 5th
• Review committee with five ATLAS and two non ATLAS members• The IBL Institute Board with the IBL Management plans to decide on one of the two
sensor technologies based on the reviewers recommendations.• Upon sensor decision, definite IBL MoU and IBL TDR addendum (new schedule) will
be done this summer
Review committee will be asked to evaluate:• Fulfilling the requirements• Look at performance, system issues, production readiness and schedule from
foundries, yield and production quantities, risks and risk mitigation• Give a weighted recommendation based on the information available at the review date
Review Committee:• External reviewers: Gino Bolla (CDF), Petra Riedler (ALICE)• ATLAS internal reviewers: Katsuo Tokushuku (Chair), Craig Buttar, Marko Mikuz, Sally
Seidel, Wladek Dabrowski• ATLAS ex-officio: Beniamino Di Girolamo, Marzio Nessi, Phil Allport,
Towards Sensor Decision for ATLAS IBLG. Darbo – INFN / Genova LHCC Upgrade session, 14 June 20114
Sensor RequirementsSensor requirements for IBL (from TDR):
• Radiation Dose: NIEL = 5 x 1015 neq/cm2, TID = 250 MradRequirements from system: The target temperature for operating the IBL sensors is approximately -15 ºC, in order to minimize effects of reverse annealing on the sensors and to avoid thermal runaway
• IBL design uses evaporative CO2 cooling an titanium pipe. • The measured Thermal Figure of Merit (TFoM) is approximately 13 [Kcm2/W], leading
to a sensor temperature of < -20ºC. See simulation in the plot below.
0 5 10 15 20 25-2
0
2
4
6
8
10
12
14
16
IBL temperature and pressure profile. MF=0.8g/s, Tsp=-40ºC, Q=101.8, xend=0.41
Branch length (m)
Del
ta T
(`C
) & D
elta
P(B
ar)
1 2 3 4 56 78 9 10 11 12
Stave TFoM: 13ºC*cm2/W
Pixel maximum temperature:
-24.4ºC
dT Tube wall (ºC)dT Fluid (ºC)dP Fluid (Bar)dT Pixel Chip (ºC)
TFoM Pressure drop ~20%
TFoM Heat transfer ~ 19%
Stave TFoM ~61%
Loaded stave temperature: -24.4°C(0.72 W/cm2)
Unloaded stave temperature: -39°C
Towards Sensor Decision for ATLAS IBLG. Darbo – INFN / Genova LHCC Upgrade session, 14 June 20115
Planar Sensor – Slim EdgeIBL selected design the Planar n-in-n technology has→ 200 μm slim edge
Guard rings on p-side are shifted beneath the outermost pixels
→ least possible inactive edge
Less homogeneous electric field, but charge collection after irradiation dominated by region directly beneath the pixel implant
→ only moderate deterioration expected
200µm from pixel to dicing strip~200÷250 µm inactive edge
500µm long pixels~450µm inactive edge
250 µm pixels
Several FE-I4 assemblies made with different thick-nesses (150 & 200µm) and conservative edge (450µm).
No IBL design.
Towards Sensor Decision for ATLAS IBLG. Darbo – INFN / Genova LHCC Upgrade session, 14 June 20116
3D Double Side SensorsFBK and CMN have similar process
• FBK full thru columns stopped by membrane. p-spray for pixel isolation
• CNM stop etching before reaching opposite end. p-stop for pixel isolation
• Expected similar performance in IBL, although variations in the two processes.
Same layout and column geometry in both designs• ~10µm column diameter• FBK full through, CNM column tip 15±7µm from
opposite wafer surface.• Production schedule requires aggregate production
700nm DRIE stopping membrane
FBK DRIE:Full thru columns
CNM DRIE:Almost fullthru columns
n+ etched and filled from top
p+ etched and filled from bottom
Towards Sensor Decision for ATLAS IBLG. Darbo – INFN / Genova LHCC Upgrade session, 14 June 20117
FE-I4 Assemblies78 FE-I4 single chip assemblies have been bump-bonded at IZM:
• 37 with 700 µm FE-I4 thick chips (no thinning of the wafer)• 36 with 470 µm FE-I4 thick chips (minimum thinning without support wafer)• 5 with 150 µm FE-I4 thick chips + 500 µm glass support (total of 660 µm including ~10
µm glue thickness)Already made assemblies with IBL sensor technologies.
• CiS: 35 of which 10 of IBL design• CNM: 16 of which 16 of IBL design• FBK: 17 of which 9 of IBL design
Towards Sensor Decision for ATLAS IBLG. Darbo – INFN / Genova LHCC Upgrade session, 14 June 20118
Irradiation & Test BeamTest beam at DESY (4 GeV electrons) in February and April and at CERN now (180 GeV pions).
• Non irradiated and irradiated samples with proton (Karlsruhe – 25 MeV), and neutron (Ljubljana – nuclear reactor)
• Proton irradiation with devices on PCB – Low proton energy bring high TID (~750Mrad) and ~1÷3 % of pixel dead in the FE-I4
• Bare assemblies irradiated (after test on PCB) in the reactor (activated tantalum by slow neutrons - Ta-182) – reloading on PCB and wirebonding before testing
Quantities we can measure at TB Detection Efficiency
(incl. Edge Efficiency) Charge Collection Efficiency• Spatial Resolution Charge Sharing/Cluster Size• Lorentz Shift
as function of Bias voltage• Threshold setting Incidence angle
measured at DESY
Monitoring available of: Leakage current Sensor temperature
Ref:
J. W
eing
arte
n –
IBL
GM
8 Ju
ne 2
011
Towards Sensor Decision for ATLAS IBLG. Darbo – INFN / Genova LHCC Upgrade session, 14 June 20119
Irradiated Samples
Ref: J.Weingarten – IBL GM 8/06/2011IBL General Meeting, CERN 9
Number of samples
Sensor type Design Thickness
(µm)Irrad
FacilityFluence (neq//cm2) Irrad status Status
3x Planar Slim Edge 250 Ljubljana 4.00E+15 irradiated lab- and beam-tested
1x Planar Slim Edge 250 Karlsruhe 3.00E+15 irradiated lab- and beam-tested
1x Planar Slim Edge 150 Karlsruhe 2.00E+15 irradiated lab- and beam-tested
1x 3D FBK-atlas07 230 Karlsruhe 2.00E+15 irradiated lab- and beam-tested
1x Planar Conservative 200 Karlsruhe 5.00E+15 irradiated lab-tested
2x 3D CNM 230 Ljubljana 5.00E+15 irradiated to be wire-bonded and tested
3x 3D CNM 230 Karlsruhe 5.00E+15 irradiated 1x lab-tested2x to be tested
1x 3D FBK-atlas09 230 Karlsruhe 5.00E+15 irradiated to be tested
3x Planar Slim Edge 200 Karlsruhe 5.00E+15 irradiated to be tested
2x Planar Slim Edge 200 Ljubljana 5.00E+15 Irrad planned for today
to be wire-bonded and tested
1x 3D FBK-atlas09 230 Karlsruhe 2.00E+15 irradiated to be tested
1x 3D CNM 230 Karlsruhe 2.00E+15 irradiated to be tested
device irradiated at IBL target fluence AND with IBL design & thickness
Towards Sensor Decision for ATLAS IBLG. Darbo – INFN / Genova LHCC Upgrade session, 14 June 201110
Conclusions
Sensor types for IBL reduced to two technologies and designs• Pre-production started for both
Sensor review in place• Decision for sensors in July 2011
Irradiated and non irradiated samples of IBL “designs” available and under test
Definite IBL MoU and TDR addendum this summer after sensor selection
Towards Sensor Decision for ATLAS IBLG. Darbo – INFN / Genova LHCC Upgrade session, 14 June 201111
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