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Contents

PREFACE xxi

ACKNOWLEDGMENT S

MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

PART I: ELECTRONIC STRUCTURE - DEEP LEVELS

•HIGH-RESOLUTION SPECTROSCOPY OF POINT DEFECTS IN SILICON 3H.G. Grimmeiss, M. Kleverman, and J. Olajos

INFRARED ABSORPTION STUDY OF ZINC-DOPED SILICON 15E. Merk, J. Heyman, and E.E. Haller

INFRARED STUDIES OF THE DOUBLE ACCEPTOR ZINC IN SILICON 21A. Dornen, R. Kienle, K. Thonke, P. Stolz,G. Pensl, D. Grunebaum, and N.A. Stolwijk

PRESSURE DEPENDENCE OF A DEEP EXCITONIC LEVEL INSILICON 27

G.A. Northrop and D.J. Wolford

ODMR OF SHALLOW DONORS IN Zn-DOPED LEC-GROWN InP 33J.M. Trombetta and T.A. Kennedy

•COMPLEX DEFECTS IN SEMICONDUCTORS 39B. Monemar

THE ELECTRONIC STRUCTURE OF INTERSTITIAL IRON INSILICON 51

A. Thilderkvist, G. Grossmann, M. Kleverman,and H.G. Grimmeiss

DISLOCATION RELATED D-BAND LUMINESCENCE; THE EFFECTSOF TRANSITION METAL CONTAMINATION 57

Victor Higgs, E.C. Lightowlers, and P. Kightley

PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF MOCVD-GROWN: GaAs:V 63

Y.J. Kao, N.M. Haegel, and W.S. Hobson

RADIATIVE AND NON-RADIATIVE RECOMBINATIONS AT ErCENTERS IN GaAlAs 69

Taha Benyattou, Djelloul Seghier, GerardGuillot, Richard Moncorge, Pierre Galtier, andMarie-Noelle Charasse

•Invited Paper

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Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerTable of ContentsMore information

http://www.cambridge.org/9781558990517http://www.cambridge.orghttp://www.cambridge.org

CHARACTERIZATION OF DEEP-LEVEL DEFECTS IN SEMI-INSULATING GaAs AND InP BY PHOTOINDUCED TRANSIENTSPECTROSCOPY (PITS) 75

Pawel Kaminski

ELECTRONIC STRUCTURE OF Li-IMPURITIES IN ZnSe 81T. Oguchi, T. Sasaki, and H. Katayama-Yoshida

MODIFIED OPTICALLY DETECTED MAGNETIC RESONANCETECHNIQUE FOR STUDIES OF DEFECTS IN Si AND GaAs 85

W.M. Chen and B. Monemar

NITROGEN AND PHOSPHOROUS IMPURITIES IN DIAMOND 89Koblar Jackson, Mark R. Pederson, andJoseph G. Harrison

PART II: ELECTRONIC STRUCTURE - SHALLOW IMPURITIES

•RADIATIVE RECOMBINATION AND CARRIER LIFETIMES INSURFACE-FREE GaAs HOMOSTRUCTURES 9 5

L.M. Smith, D.J. Wolford, R. Venkatasubramanian,and S.K. Ghandhi

EVIDENCE FOR STRONG TRAPPING BY IONIZED DONORS OF FREEEXCITONS IN EXCITED STATES FOR HIGH PURITY GaAs ANDAlGaAs 109

S. Zemon and G. Lambert

FORMATION OF THREE RED-SHIFT EMISSIONS IN HEAVILYGERMANIUM-DOPED P-TYPE GaAs GROWN BY MBE 115

Y. Makita, A. Yamada, H. Shibata, H. Asakura,N. Ohnishi, A.C. Beye, K.M. Mayer, andN. Kutsuwada

ELECTRICAL PROPERTIES OF HEAVILY Be-DOPED GaAs GROWNBY MOLECULAR BEAM EPITAXY 121

H. Shibata, Y. Makita, A. Yamada, N. Ohnishi,M. Mori, Y. Nakayama, A.C. Beye, K.M. Mayer,T. Takahashi, Y. Sugiyama, M. Tacano, K. Ishituka,and T. Matsumori

PHOTOLUMINESCENCE STUDY OF GaAs DIFFUSED WITH Li 127H.P. Gislason, E.G. Sveinbjornsson, B. Monemar,and M. Linnarsson

LASER-THERMAL IMPURITY PUMPING OF SHALLOW DONORS INULTRAPURE GERMANIUM 133

T. Theiler, F. Keilmann, and E.E. Haller

ELECTRICAL AND PHOTOLUMINESCENCE PROPERTIES OF Mg+

AND C+ IMPLANTED ACCEPTORS IN InP 139A.C. Beye, A. Yamada, A. Shimizu, H. Shibata,H. Tanoue, K.M. Mayer, H. Sugiyama, K. Kamijoh,T. Oda, O. Arriga, I. Akiyama, N. Kutsuwada,T. Matsumori, S. Uekusa, and Y. Makita

•Invited Paper




PART III: ELECTRONIC STRUCTURES - NATIVEDEFECTS, COMPLEXES, TRANSITION METALS IN COMPOUNDS

OPTICALLY DETECTED MAGNETIC RESONANCE OF SULFUR DOPEDGALLIUM PHOSPHIDE 145

K.L. Brower

THE ROLE OF OXYGEN IN p-TYPE InP 151J. Michel, J. Jeong, K.M. Lee, and L.C. Kimerling

MID-INFRARED SPECTRAL PHOTORESPONSE OF SEMI-INSULATINGGaAs 157

G.J. Brown and W.C. Mitchel

CORRELATION OF THE 0.8 eV EMISSION BAND WITH THE EL6CENTER IN GaAs 163

S. Alaya, M.A. Zaidi, G. Marrakchi, H. Maaref,H.J, von Bardeleben, and J.C. Bourgoin

THE ELECTRONIC STRUCTURE OF THE "0.15 eV" Cu ACCEPTORLEVEL IN GaAs 169

E. Janzen, M. Linnarsson, B. Monemar, andM. Kleverman

OPTICAL ABSORPTION OF DEEP DEFECTS IN NEUTRONIRRADIATED SEMI-INSULATING GaAs 175

M.O. Manasreh and P.J. Pearah

NEW, GERMANIUM - RELATED DEFECT IN NEUTRON - IRRADIATEDGALLIUM PHOSPHIDE 179

J. Barczynska and E. Goldys

DEEP LEVEL LUMINESCENCE IN InP: PHONON FEATURE ANALYSIS 185S. Banerjee, A.K. Srivastava, and B.M. Arora

THE NATURE OF NATIVE DEFECTS IN LEC GROWN SEMI-INSULATING GaAs BY THERMALLY STIMULATED CURRENTSPECTROSCOPY 189

Zhaoqiang Fang, Lei Shan, T.E. Schlesinger, andA.G. Milnes

ANOMALOUS LUMINESCENCE PROPERTIES OF GaAs GROWN BYMOLECULAR BEAM EPITAXY 19 3

I. Szafranek, M.A. Piano, M.J. McCollum,S.L. Jackson, S.A. Stockman, K.Y. Cheng, andG.E. Stillman

COMPARATIVE OPTICAL STUDIES OF Cu, Mn, AND C IMPURITIESIN BULK LEC GROWN GaAs BY ELECTRON BEAM ELECTROREFLEC-TANCE (EBER) AND PHOTOLUMINESCENCE (PL) 197

M.H. Herman, P.J. Pearah, K. Elcess, and I.D. Ward

Ge RELATED DEEP LEVEL LUMINESCENCE IN InGaAs LATTICEMATCHED TO InP 203

S.S. Chandvankar, A.K. Srivastava, B.M. Arora,and D.K. Sharma

THE DEEP 0.1leV MANGANESE ACCEPTOR LEVEL IN GaAs 2 07M. Kleverman, E. Janzen, M. Linnarsson, andB. Monemar

vii




IDENTIFICATION OF SURFACE-RELATED ELECTRON TRAPS INUNDOPED GaAs BY DEEP LEVEL TRANSIENT SPECTROSCOPY 211

Ki-Chul Shin and In-Shik Park

LUMINESCENCE DUE TO Mn DOPED GaP 215Teresa Monteiro and Estela Pereira

PART IV: ELECTRONIC STRUCTURE - COMPLEXES IN SILICON

*HIGH PERFORMANCE PHOTOLUMINESCENCE SPECTROSCOPY USINGFOURIER TRANSFORM INTERFEROMETRY 221

M.L.W. Thewalt, M.K. Nissen, D.J.S. Beckett, andK.R. Lundgren

GENERATION AND DISSOCIATION OF IRON-BORON PAIRS INSILICON 233

Masashi Suezawa and Koji Sumino

PHOTOCONDUCTIVITY STUDY OF CrB AND Cr. IN SILICON 239A. Schlette, R. Kienle, A. Do men* W. Kiirner,and K. Thonke

•FORMATION OF In-Cu PAIRS IN SILICON DURING CHEMO-MECHANICAL POLISHING 245

Th. Wichert, R. Keller, M. Deicher, W. Pfeiffer,H. Skudlik, and D. Steiner

STRAIN INDUCED INTRINSIC QUANTUM WELLS AS THE ORIGINOF BROAD BAND PHOTOLUMINESCENCE IN SILICON CONTAININGEXTENDED DEFECTS 257

H. Weman and B. Monemar

OPTICAL PROPERTIES OF NOVEL VIBRONIC BANDS IN ELECTRON-IRRADIATED TIN DOPED SILICON 261

J.H. Svensson, B. Monemar, and B.G. Svensson

A NEW METASTABLE DEFECT IN SILICON, OPTICAL PROPERTIESAND AN INVESTIGATION OF THE MECHANISM CAUSING THECONFIGURATIONAL CHANGE 265

J.H. Svensson and B. Monemar

NOVEL LUMINESCENCE BAND IN SILICON IMPLANTED WITHPHOSPHORUS AND BORON 269

A.K. Srivastava, D.K. Sharma, K.L. Narasimhan,D. Sarkar, and V. Premchandran

UNIAXIAL STRESS AND ZEEMAN MEASUREMENTS ON THE 943 meVLUMINESCENCE BAND IN SILICON 273

M.C. Carmo, K.G. McGuigan, M.O. Henry, G. Davies,and E.C. Lightowlers

IDENTIFICATION OF RADIATION-INDUCED DEFECTS IN Si:Al 277Ya.I. Latushko and V.V. Petrov

•Invited Paper




DEFECT-FORMATION DEPENDENCE ON GROUP V-DOPANT ATOMS INELECTRON-IRRADIATED SILICON 283

O.O. Awadelkarim, A. Henry, B. Monemar, andJ.L. LindstrSm

ELECTRONIC STRUCTURE OF VACANCY-PHOSPHORUS IMPURITYCOMPLEXES IN SILICON 287

Hongqi Xu and U. Lindefelt

NEW DLTS PEAKS ASSOCIATED WITH NEW DONORS AND RODLIKEDEFECTS IN CZOCHRALSKI SILICON 291

Yoichi Kamiura, Fumio Hashimoto, and Minoru Yoneta

MULTICONFIGURATIONAL CARBON-GROUP V PAIR DEFECTS INSILICON 295

E. Giirer and B.W. Benson

EXCITONIC RECOMBINATION AT A TRANSITION-METAL RELATEDDEFECT IN SILICON 299

K.G. McGuigan, M.O. Henry, E.C. Lightowlers,and M.H. Nazare

ELECTRONIC STRUCTURE OF TWO SULPHUR-RELATED BOUNDEXCITONS IN SILICON STUDIED BY OPTICAL DETECTION OFMAGNETIC RESONANCE 303

W.M. Chen, A. Henry, E. Janzen, B. Monemar,and M.L.W. Thewalt

AN ELECTRON PARAMAGNETIC RESONANCE INVESTIGATION OFIRON-INDIUM PAIRS IN SILICON 307

P. Emanuelsson, W. Gehlhoff, P. Omling, andH.G. Grimmeiss

PART V: ELECTRONIC STRUCTURE - SUPERLATTICES

•LIGHT- AND HEAVY-HOLE BOUND EXCITON TRANSITIONS ANDFREE TO BOUND TRANSITIONS IN Ga Al, As/GaAs QUANTUMWELLS x i x 3 1 3

Donald C. Reynolds and K.K. Bajaj

DECAY MEASUREMENTS OF FREE AND BOUND EXCITON RECOM-BINATION IN DOPED GaAs/GaAlAs QUANTUM WELLS 325

J.P. Bergman, P.O. Holtz, B. Monemar,M. Sundaram, J.L. Merz, and A.C. Gossard

EFFECTS OF CONFINEMENT ON THE OPTICAL PROPERTIES OFA SHALLOW ACCEPTOR AND ITS BOUND EXCITON IN NARROWGaAs/AlGaAs QUANTUM WELLS 331

P.O. Holtz, M. Sundaram, G.C. Rune, B. Monemar,J.L. Merz, and A.C. Gossard

INTRINSIC LUMINESCENCE OF GaAs/AlGaAs HETEROJUNCTIONSIN A TRANSVERSE ELECTRIC FIELD 337

Q.X. Zhao, J.P. Bergman, P.O. Holtz, B. Monemar,C. Hallin, M. Sundaram, J.L. Merz, and A.C. Gossard

•Invited Paper




DEFECT INDUCED LUMINESCENCE FROM MBE PREPAREDSi/Si!-.xGex SUPERLATTICES 343

G.A. Northrop, S.S. Iyer, and D.J. Wolford

DEEP LEVELS IN SUPERLATTICES 349John D. Dow, Shang Yuan Ren, Jun Shen, andMin-Hsiung Tsai

QUALITATIVE PHYSICS OF DEFECTS IN QUANTUM WELLS:INTERFACE ROUGHNESS 361

Harold P. Hjalmarson

PART VI: HYDROGEN IN SILICON

*FERMI RESONANCE EFFECTS ON THE VIBRATION MODES OFHYDROGEN-PASSIVATED BORON IN SILICON 367

G.D. Watkins, W.B. Fowler, G.G. Deleo, M. Stavola,D.M. Kozuch, S.J. Pearton, and J. Lopata

OPTICALLY DETECTED MAGNETIC RESONANCE OF A HYDROGEN-RELATED COMPLEX DEFECT IN SILICON 377

W.M. Chen, O.O. Awadelkarim, B. Monemar,J.L. Lindstrom, and G.S. Oehrlein

•HYDROGEN IN CRYSTALLINE AND AMORPHOUS SILICON 383Guido L. Chiarotti, F. Buda, R. Car, andM. Parrinello

HYDROGEN DIFFUSION IN BORON-DOPED SILICON 39 5C.P. Herrero, M. Stutzmann, and A. Breitschwerdt

MODELING OF THE DIFFUSION OF HYDROGEN IN SILICON 401D. Mathiot, D. Ballutaud, P. De Mierry, andM. Aucouturier

•STRUCTURE AND METASTABILITY OF MUONIUM CENTERS INSEMICONDUCTORS AND THEIR SIMULATION OF ISOLATEDHYDROGEN CENTERS 407

T.L. Estle, R.F. Kiefl, J.W. Schneider, andC. Schwab

ELECTRONIC STRUCTURE AND HYPERFINE PARAMETERS FORHYDROGEN AND MUONIUM IN SILICON 419

Chris G. Van de Walle

HYDROGEN IN CRYSTALLINE SILICON UNDER COMPRESSION ANDTENSION 425

C.S. Nichols and D.R. Clarke

ANALYSIS OF REAL-TIME HYDROGENATION DATA FROM P ANDN-TYPE SILICON 431

Carleton H. Seager and Robert A. Anderson

HYDROGEN SEGREGATION AT THE Al/Si INTERFACE STUDIEDUSING A NUCLEAR RESONANT REACTION 437

Joyce C. Liu, A.D. Marwick, and F.K. Legoues

•Invited Paper




DISSOCIATION KINETICS OF SHALLOW-ACCEPTOR-HYDROGENPAIRS IN SILICON 443

T. Zundel and J. Weber

HYDROGEN INDUCED DEFECTS AT SILICON SURFACES AND BURIEDEPITAXIAL MISFIT DISLOCATION INTERFACES 449

Tian-Qun Zhou, Zbigniew Radzimski, Zhigang Xiao,Bhushan Sopori, and George A. Rozgonyi

SURFACE AND BULK PROPERTIES WHICH INFLUENCE ION-BEAMHYDROGENATION OF SILICON 455

Robert A. Anderson and Carleton H. Seager

HYDROGEN PASSIVATION STUDIES IN DISLOCATED CZ AND FZSILICON 459

C. Dube, J.P. Kalejs, and S. Rajendran

PART VII: HYDROGEN IN III-Vs

•HYDROGEN COMPLEXES IN III-V SEMICONDUCTORS 465Bernard Pajot

Sn-H COMPLEX IN HYDROGEN PASSIVATED GaAs 477D.M. Kozuch, Michael Stavola, S.J. Pearton,C.R. Abernathy, and J. Lopata

REASSESSMENT OF ACCEPTOR PASSIVATION MODELS IN p-TYPEHYDROGENATED GaAs 483

I. Szafranek and G.E. Stillman

HYDROGEN PASSIVATION OF INTERFACIAL DEFECTS IN MOCVDGROWN GaAs/InP 489

V. Swaminathan, U.K. Chakrabarti, W.S. Hobson,R. Caruso, J. Lopata, and S.J. Pearton

PASSIVATION OF Zn-ACCEPTORS IN InGaAs DURING RIE WITHCHF3/H2 AND CH4/H2 495

Martin Mohrle

SURFACE PROTECTION DURING PLASMA HYDROGENATION FORACCEPTOR PASSIVATION IN InP 501

J. Lopata, W.C. Dautremont-Smith, S.J. Pearton,J.W. Lee, N.T. Ha, and H.S. Luftman

PART VIII: DIFFUSION IN SILICON AND GERMANIUM

•ATOMIC DIFFUSION PROCESSES IN SILICON 511Sokrates T. Pantelides

PRESSURE AND STRAIN EFFECTS ON DIFFUSION 523A. Antonelli and J. Bernholc

LOW-TEMPERATURE DIFFUSION OF DOPANTS IN SILICON 529P. Fahey and M. Wittmer

•Invited Paper




DETERMINATION OF DIFFUSION PARAMETERS FOR ARSENIC 535Michael Heinrich, Matthias Budil, andHans W. Potzl

MEASUREMENTS OF ENHANCED DIFFUSION OF BURIED LAYERSIN SILICON MEMBRANE STRUCTURES DURING OXIDATION 543

Scott T. Dunham, Anuradha M. Agarwal, andNanseng Jeng

MIGRATIONS OF INTERSTITIAL ATOMS IN SEMICONDUCTORS(SURFACE DIFFUSION AND KICK-OUT MECHANISM) 549

Takao Wada, Akihiro Takeda, Masaya Ichimura,and Michihiko Takeda

MEASUREMENTS OF ENHANCED OXYGEN DIFFUSION IN SILICONDURING THERMAL DONOR FORMATION: NEW EVIDENCE FORPOSSIBLE MECHANISMS 555

A.R. Brown, R. Murray, R.C. Newman, andJ.H. Tucker

A STEADY-STATE MODEL FOR COUPLED DEFECT IMPURITYDIFFUSION IN SILICON 561

F . F . Morehead and R .F . Lever

HIGH AND LCW TEMPERATURE MEASUREMENTS OF THE CHROMIUMDIFFUSIVITY IN SILICON 567

J . Zhu and D. B a r b i e r

THE FORMATION OF SILICON-RICH SILICIDES 573Mar ia Ronay and R.G. Schad

PRECIPITATION OF COPPER AND COBALT AT GRAIN BOUNDARIESIN SILICON 579

U. J e n d r i c h and H . J . Mol le r

ANNEALING OF ION IMPLANTED TIN IN SILICON: A RBS/CHANNELING, MOSSBAUER SPECTROSCOPY AND TEM INVESTIGA-TION OF SOLUBILITY AND RESIDUAL DEFECTS 585

P. Kringhtfj , A. Nylands ted La r sen , and J.W.Petersen

EXTREME SUPERSATURATION OF OXYGEN IN LOW TEMPERATUREEPITAXIAL SILICON AND SILICON-GERMANIUM ALLOYS 591

P.V. Schwartz, J.C. Sturm, P.M. Garone, andS.A. Schwarz

AN ANOMALOUS VACANCY DIFFUSION IN SILICON DURING THEANTIMONY DRIVE-IN DIFFUSION 597

W. Wijaranakula and J.H. Matlock

A COMPARISON OF THE DIFFUSIVITY OF As AND Ge IN Si ATHIGH DONOR CONCENTRATIONS 601

K. Kyllesbech Larsen, P. Gaiduk, and A. NylandstedLarsen

ANOMALOUS TRANSIENT TAIL DIFFUSION OF BORON IN SILICON:KINETIC MODELING OF DIFFUSION AND CLUSTER FORMATION 605

N.E.B. Cowern, H.F.F. Jos, K.T.F. Janssen, andA.J.H. Wachters

xii




FAILURE OF THE "KICK-OUT" MODEL FOR THE DIFFUSION OFAu INTO Si WHEN TESTED BY MONTE CARLO SIMULATION 609

U. Schmid, J.A. Van Vechten, N.C. Myers, andU. Koch

DIFFUSION OF POINT DEFECTS IN A STRESSED SIMPLE CUBICLATTICE 615

Dimitrios Maroudas and Robert A. Brown

THE ENHANCEMENT OF THE INTERDIFFUSION IN Si/Ge AMORPHOUSARTIFICIAL MULTILAYERS BY ADDITIONS OF B AND Au 621

B. Park, F. Spaepen, J.M. Poate, and D.C. Jacobson

DIFFUSION OF Au IN AMORPHOUS Si MEASURED BY THEARTIFICIAL MULTILAYER TECHNIQUE 627

E. Nygren, B. Park, L.M. Goldman, D.T. Wu,A.V. Wagner, and F. Spaepen

HYDROGEN DIFFUSION AND COMPLEX FORMATION IN SILICON 633J.T. Borenstein, D. Tulchinski, and J.W. Corbett

PART IX: DIFFUSION IN COMPOUNDS

•DIFFUSION AND INTERDIFFUSION IN MULTILAYERED SEMI-CONDUCTOR SYSTEMS 639

A. Ourmazd, Y. Kim, and M. Bode

ATOMIC LAYER EPITAXY OF GaAs ON Ge SUBSTRATES 647J. Ramdani, B.T. McDermott, and S.M. Bedair

DIFFUSION OF ION IMPLANTED Mg AND Be IN GaAs 65 3H.G. Robinson, M.D. Deal, and D.A. Stevenson

DEFECT FORMATION DURING Zn DIFFUSION INTO GaAs 659Martina Luysberg, W. Jager, K. Urban, M. Perret,N.A. Stolwijk, and H. Mehrer

ROOM-TEMPERATURE DIFFUSION OF Mn IN CdTe AND THEFORMATION OF Cd!_xMnxTe 665

A. Wall, A. Raisanen, G. Haugstad, andA. Franciosi

AN EXAMINATION OF THE MECHANISMS OF Si DIFFUSION INGaAs 671

Shaofeng Yu, Ulrich M. Gosele, and Teh Y. Tan

DIFFUSION OF Ga VACANCIES AND Si IN GaAs 677K.B. Kahen, D.J. Lawrence, D.L. Peterson, andG. Rajeswaran

MECHANISM FOR THE DIFFUSION OF ZINC IN GALLIUM ARSENIDE 681K.B. Kahen

DIFFUSION OF ION-IMPLANTED TIN IN GALLIUM ARSENIDE 685E.L. Allen, M.D. Deal, and J.D. Plummer

*Invited Paper

xiii




THE ROLE OF CHARGED POINT DEFECTS ON THE DIFFUSIONBEHAVIOR OF SILICON IN GaAs 691

Jeffrey J. Murray, Michael D. Deal, andDavid A. Stevenson

PART X: DIFFUSION IN SUPERLATTICES

•IMPURITY-INDUCED LAYER DISORDERING: CURRENT UNDER-STANDING AND AREAS FOR FUTURE INVESTIGATION 697

L.J. Guido and Nick Holonyak, Jr.

BEHAVIOR OF DOPANT-RELATED DEFECTS IN AlGaAs SUPER-LATTICES 709

N.D. Theodore, P. Mei, S.A. Schwarz, C.B. Carter,C. Palmstrom, J.P. Harbison, and L.T. Florez

•DIFFUSION IN GALLIUM ARSENIDE AND GaAs-BASED LAYEREDSTRUCTURES 715

U. GSsele, T.Y. Tan, and Shaofeng Yu

PART XI: DX CENTERS

*THE DX CENTER: EVIDENCE FOR CHARGE CAPTURE VIA ANEXCITED INTERMEDIATE STATE 729

Thomas N. Theis and Patricia M. Mooney

EFFECT OF LOCAL ATOMIC CONFIGURATION ON DX ENERGYLEVEL 741

T. Baba, M. Mizuta, T. Fujisawa, J. Yoshino,and H. Kukimoto

ELECTRIC FIELD ENHANCEMENT OF ELECTRON EMISSION FROMDX CENTERS AND CONSEQUENCES 747

J.C. Bourgoin, M. Zazoui, S.L. Feng, H.J. vonBardeleben, S. Alaya, and H. Maaref

OPTICALLY DETECTED MAGNETIC RESONANCE OF GROUP IV ANDGROUP VI DONORS IN AIQ.6 G a 0.4As/GaAs HETEROSTRUCTURES 753

E. Glaser, T.A. Kennedy, B. Molnar, and M. Mizuta

PHOTOLUMINESCENCE AND BANDGAP NARROWING IN HEAVILYDOPED iv-GaAs 759

H.D. Yao and A. Compaan

•THEORY OF DX CENTERS IN Al x G ai_ x ALLOYS 7 65D.J. Chadi and S.B. Zhang

A PHOTOCAPTURE TEST OF DX-CENTER MODELS 773Harold P. Hjalmarson, S.R. Kurtz, and T.M.Brennan

DX-CENTER IN Se-DOPED AlxGai_xAs 781Thomas R. Hanak, Assem M. Bakry, Richard K.Ahrenkiel, and Michael L. Timmons

•Invited Paper




POOLE FRENKEL EFFECT ON THE DX CENTERS IN III-V TERNARYALLOYS 785

H. Altelarrea, J. Bosch, A. Perez, J. Samitier,and J.R. Morante

TRANSIENT CURRENT AND TRANSIENT CAPACITANCE MEASUREMENTSOF DEFECTS IN AlGaAs HEMTS 789

R. Magno and R. Shelby

ELECTRONIC AND OPTICAL PROPERTIES OF DEEP DONORS INHYDROGENATED AlxGai_x-As:Si 793

R. Mostefaoui, R. Legros, J. Chevallier, C.W. Tu,and R.F. Kopf

PART XII: EL2 CENTERS

THE METASTABILITY OF THE EL2 AND DX DEFECTS IN GaAs AND3-5 ALLOYS 799

H.J. von Bardeleben and J.C. Bourgoin

•PROGRESS IN UNDERSTANDING THE OPTICAL PROPERTIES OF EL2 805G.A. Baraff

THE DOUBLE DONOR ISSUE OF THE EL2 DEFECT IN GaAs 809M.O. Manasreh and G.J. Brown

ABSOLUTE PRESSURE DEPENDENCE OF THE SECOND IONIZATIONLEVEL OF EL2 IN GaAs 815

D.E. Bliss, W. Walukiewicz, D.D. Nolte, andE.E. Haller

*THE SYMMETRY OF THE EL2 DEFECT IN GaAs 821P. Trautman and J.M. Baranowski

RECOVERY FROM THE METASTABLE EL2 DEFECT IN GaAS UNDERMONOCHROMATIC LIGHT ILLUMINATION 827

M.O. Manasreh and D.W. Fischer

EL-2 DEFECT FORMATION AND CARBON INCORPORATION IN GaAsGRCWN BY ORGANOMETALLIC VAPOR PHASE EPITAXY 831

R. Venkatasubramanian, J.M. Borrego, andS.K. Ghandhi

THE ROLE OF EL2 FOR THE MOBILITY-LIFETIME PRODUCT OFPHOTOEXCITED ELECTRONS IN GaAs 837

G.C. Valley, H.J. von Bardeleben, andH. Rajbenbach

PART XIII: DOPING IN III-Vs

•ELECTRON SCATTERING BY NATIVE DEFECTS IN UNIFORMLY ANDMODULATION DOPED SEMICONDUCTOR STRUCTURES 845

W. Walukiewicz

•Invited Paper




ACCEPTOR DELTA-DOPING IN GaAs 855W.S. Hobson, S.J. Pearton, C.R. Abernathy, andG. Cabaniss

PRECIPITATION PHENOMEJtfA ASSOCIATED WITH ULTRA-HIGH BeDOPING IN Gao.47Ino.53P LAYERS GROWN BY MBE 861

C M . Cotell, M.B. Panish, R.A. Hamm, L.C. Hopkins,and J.M. Gibson

CHARACTERISTICS OF DOPING AND DIFFUSION OF HEAVILY DOPEDN AND P TYPE InP AND InGaAs EPITAXIAL LAYERS GROWN BYMETAL ORGANIC CHEMICAL VAPOR DEPOSITION 867

C.J. Pinzone, N.T. Ha, N.D. Gerrard, R.D. Dupuis,and H.S. Luftman

EFFECTS OF Si INCORPORATION AND ELECTRICAL ACTIVATION ONINTERSUBBAND OPTICAL ABSORPTION IN MBE-GROWN GaAs/AlGaAsMULTIPLE QUANTUM WELL STRUCTURES 875

J.D. Ralston, H. Ennen, M. Maier, M. Ramsteiner,B. Dischler, P. Koidl, and P. Hiesinger

BERYLLIUM DOING IN MBE-GROWN GaAs AND AlGaAs 881Joseph Pellegrino, James Griffin, Leary Myers,and Michael Spencer

CARBON DOPING IN InGaAs GROWN BY MBE 887Hiroshi Ito and Tadao Ishibashi

PART XIV: ORDERING IN ALLOYS

•ORDERING IN III/V ALLOYS 893G.B. Stringfellow

COMPARISON OF ORDERED AND MODULATED STRUCTURES INInGaP ALLOY SEMICONDUCTORS GROWN BY MOCVD, CHLORIDE-VPE AND LPE METHODS 901

0. Ueda, T. Kato, T. Matsumoto, M. Hoshino,M. Takechi, and M. Ozeki

ATOMIC ORDERING AND ALLOY CLUSTERING IN MBE-GROWNInASySbi_y EPITAXIAL LAYERS 907

Tae-Yeon Seong, A.G. Norman, G.R. Booker,R. Droopad, R.L. Williams, S.D. Parker,P.D. Wang, and R.A. Stradling

PART XV: PROCESSING OF SILICON AND GERMANIUM

RAPID THERMAL PROCESS-INDUCED DEFECTS: GETTERING OFINTERNAL CONTAMINANTS 915

Bouchaib Hartiti, Wolfgang Eichhammer, Jean-Claude Muller, and Paul Siffert

•Invited Paper




OXYGEN AND IRON REDISTRIBUTION UPON THERMAL TREATMENTIN IRON IMPLANTED SILICON 919

B. Pivac, A. Borghesi, L. Ottolini, M. Geddo,A. Piaggi, and A. Stella

ION BEAM ETCHING OF SILICON: IMPLANTATION AND DIFFUSIONOF NOBLE GAS ATOMS, AND GETTERING OF COPPER 923

William D. Sawyer, J6rg Schm'alzlin, and Jorg Weber

ANGLE RESOLVED XPS ANALYSIS OF SURFACE REGION DEFECTS INRAPID THERMAL ANNEALED ANTIMONY IMPLANTED SILICON 927

S.N, Kumar, G. Chaussemy, A. Laugier, B. Canut,and M. Charbonnier

DEFECTS IN MBE-GROWN SILICON EPILAYERS STUDIED WITHVARIABLE-ENERGY POSITRONS 931

P.J. Simpson, P.J. Schultz, I.V. Mitchell,T.E. Jackman, and G.C. Aers

A HVEM STUDY OF THE ELECTRON IRRADIATED DEFECTS INNITROGEN DOPED FZ-Si SINGLE CRYSTAL 937

Gao Yuzun and T. Takeyama

MOLECULAR DYNAMICS STUDIES OF DISLOCATIONS IN Si 941M.S. Duesbery, D.J. Michel, and B. Joos

A TEM INVESTIGATION OF SECONDARY DISLOCATIONS IN GRAINBOUNDARIES IN GERMANIUM 945

M. Griess, M. Seibt, and H.J. Moller

AC PHOTOVOLTAIC INSPECTION OF P-N JUNCTIONS HAVING HIGHLEAKAGE CURRENT 951

N. Honma, H. Shimizu, C. Munakata, and M. Ogasawara

TWINNING STRUCTURE OF {113} DEFECTS IN HIGH-DOSE OXYGENIMPLANTED SILICON-ON-INSULATOR MATERIAL 9 55

S. Visitserngtrakul, J. Barry, and S. Krause

STRUCTURAL TRANSITIONS IN TITANIUM/AMORPHOUS-SILICONMULTILAYERS 961

E. Ma, L.A. Clevenger, C.V. Thompson, R.R.DeAvillez, and K.N. Tu

STUDIES OF THE EARLY OXIDATION OF SILICON (111) INATOMIC OXYGEN 965

Bhola N. De, Jane Hruska, Jane Peterkin, YongZhao, and John A. Woollam

ENHANCEMENT OF OXYGEN PRECIPITATION IN QUENCHEDCZOCHRALSKI SILICON CRYSTALS 969

A. Hara, T. Fukuda, I. Hirai, and A. Ohsawa




PART XVI: PROCESSING OF COMPOUNDS

BURIED AMORPHOUS LAYER IN GALLIUM ARSENIDE 975D. Sengupta, M.C. Ridgway, J.M. Zemanski, andS.T. Johnson

DEFECT LEVELS IN THE NEAR-SURFACE REGION OF 2.0 MeV16O+ ION IMPLANTED n-GaAs 979

C.C. Tin, P.A. Barnes, T.T. Bardin, andJ.G. Pronko

CORRELATION OF VOID FORMATION WITH THE REDUCTION OFCARRIER ACTIVATION AND ANOMALOUS DOPANT DIFFUSION INSi-IMPLANTED GaAs 983

Kei-Yu Ko, Samuel Chen, S.-Tong Lee, Longru Zheng,and T.Y. Tan

SURFACE AND INTERFACE DAMAGE CHARACTERIZATION OFREACTIVE ION ETCHED MBE REGROWN GaAs 987

M.W. Cole, M. Dutta, J. Rossabi, D.D. Smith, andJ.L. Lehman

Pd/Au:Be OHMIC CONTACTS TO p-TYPE GaAs 993K.M. Schmitz, K.L. Jiao, R. Sharma, W.A. Anderson,G. Rajeswaran, L.R. Zheng, M.W. Cole, and R.T.Lareau

IMPROVED HOLE DIFFUSION LENGTHS IN BULK n-TYPE GaAsFOR HIGH EFFICIENCY SOLAR CELLS 997

D. Wong, T.E. Schlesinger, and A.G. Milnes

THE STUDY OF CONTAMINATION OF CARBON, BORON, ANDOXYGEN IN LEC-GaAs 1001

Y. Itoh, M. Takai, H. Fukushima, and H. Kirita

IN-SITU SYNTHESIS AND MAGNETICALLY STABILIZEDKYROPOULOS GROWTH OF UNDOPED INDIUM PHOSPHIDE 1007

Stephen Bachowski, Brian S. Ahern, Robert M.Hilton, and Joseph A. Adamski

DEEP-LEVEL DOMINATED CURRENT-VOLTAGE CHARACTERISTICSOF NOVEL SEMICONDUCTOR HETEROSTRUCTURES 1011

K. Das

SURFACE STRUCTURE OF SULFUR COATED GaAs 1017Yoshihisa Fujisaki and Shigeo Goto

ELECTRICAL AND MATERIAL CHARACTERIZATION OF THESTABILITY OF AlGaAs AND GaAs PLANAR DOPED STRUCTURES 1021

Larry P. Sadwick and Dwight C. Streit

PHOTOLUMINESCENCE STUDIES OF IMPURITIES AND DEFECTS INMERCURIC IODIDE 1027

X.J. Bao, T.E. Schlesinger, R.B. James, A.Y. Cheng,and C. Ortale

xviii




DEPTH SENSITIVE IMAGING OF DEFECTS IN EPILAYERS ANDSINGLE CRYSTALS USING WHITE BEAM SYNCHROTRON RADIATIONTOPOGRAPHY IN GRAZING BRAGG-LAUE GEOMETRY 1031

M. Dudley, G.-D. Yao, J. Wuf and H.-Y. Liu

AUTHOR INDEX 1037

SUBJECT INDEX 1043

MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS 1051




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