structure and properties of interfaces in...

Structure and Properties of Interfacesin Materials

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Cambridge University Press978-1-107-40979-8 - Materials Research Society Symposium Proceedings: Volume 238:Structure and Properties of Interfaces in MaterialsEditors: William A. T. Clark, Ulrich Dahmen and Clyde L. BriantFrontmatterMore information

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MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 238

Structure and Properties of Interfacesin Materials

Symposium held Decmber 2-5, 1991, Boston, Massachusetts, U.S.A.

EDITORS:

William AT. ClarkOhio State University, Columbus, Ohio, U.S.A.

Ulrich DahmenNational Center for Electron Microscopy, Lawrence Berkeley Laboratory,Berkeley, California, U.S.A.

Clyde L. BriantGeneral Electric, Schnectady, New York, U.S.A.

IMIRISI MATERIALS RESEARCH SOCIETYPittsburgh, Pennsylvania






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Contents

PREFACE xv

MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS xvi

PART I: INTERFACIAL STRUCTURE AND DEFECTS

•ACCOMMODATION OF SUBSTRATE STEPS IN THE GROWTH OF CoSi2ON (111) Si 3

A.C. Daykin, C J . Kiely, and R.C. Pond

TILTS IN THIN STRAINED LAYERS 17Richard Beanland

THE EFFECT OF INITIAL GROWTH CONDITIONS ON THE TILTINGOF LATTICE PLANES IN InP-ON-GaAs HETEROSTRUCTURES 23

Ferenc Riesz, K. Lischka, K. Rakennus, T. Hakkarainen, A. Pesek,and E. Koppensteiner

•DESCRIPTION OF THE ATOMIC POSITIONS AROUND INTERFACIALLEDGES IN TERMS OF THE SOMIGLIANA DISLOCATION MODEL 29

R. Bonnet and M. Loubradou

ATOMIC STRUCTURE OF INTERNAL INTERFACES IN A Ti3Al-TiAlTWO-PHASE ALLOY 41

J.M. Penisson, R. Bonnet, M. Loubradou, and C. Derder

PREFERRED ORIENTATIONS IN METAL/NON-METAL INTERFACESYSTEMS 47

K. McCafferty, A. Soper, J. Shirokoff, and U. Erb

•ELASTIC PROPERTIES OF STEPS AT INTERPHASE BOUNDARIES 53G.J. Shiflet

DYNAMICS AND ATOMIC STRUCTURE OF MARTENSITE-AUSTENITEINTERFACES 65

S. Chen, P.C. Clapp, and J.A. Rifkin

THE PROPERTIES OF TWINNING DISLOCATIONS IN ALPHA-TITANIUM SIMULATED WITH A MANY-BODY INTERATOMICPOTENTIAL 73

David J. Bacon and Anna Serra

EVALUATION OF THE INTERFACE STRUCTURE DURING STRANSKI-KRASTANOV GROWTH OF Ge(Si) ON Si(OOl) 79

M. Albrecht, H.P. Strunk, P.O. Hansson, and E. Bauser

MISFIT DISLOCATION NUCLEATION SITES AND METASTABILITYENHANCEMENT OF SELECTIVE Si, xGex/Si GROWN BY RAPIDTHERMAL CHEMICAL VAPOR DEPOSITION 85

C.W. Liu, J.C. Sturm, P.V. Schwartz, and E.A. Fitzgerald

LOMER DISLOCATIONS IN (001) GaSb/GaAs HETEROSTRUCTURE 91Andr6 M. Rocher, Joon M. Kang, and Anne Ponchet

•Invited Paper






DEFECT STRUCTURES IN EPITAXIALLY GROWN InAs FILMS ONInP SUBSTRATES 95

A.K. Ballal, L. Salamanca-Riba, D.L. Partin, J. Heremans,L. Green, and B.K. Fuller

POINT DEFECT DETECTOR STUDIES OF OXIDIZED SILICON 101H.L. Meng, K.S. Jones, and S. Prussin

MICROSTRUCTURAL BEHAVIOR OF POLY-Si IMPLANTED WITHOXYGEN 107

N. David Theodore, WenLing M. Huang, and Peter A. Crozier

CHARACTERIZATION OF P+-IMPLANTED SILICON 113N. David Theodore, Lynnita Knoch, Jim Christiansen, andM. Pan

PRINCIPLES AND PERFORMANCE OF A PC-BASED PROGRAM FORSIMULATION OF GRAZING INCIDENCE X-RAY REFLECTIVITYPROFILES 119

M. Wormington, D.K. Bowen, and B.K. Tanner

PART II: GRAIN BOUNDARIES

*THE STRUCTURE AND PROPERTIES OF GRAIN BOUNDARIES INNi3Al 127

M.J. Mills, S.H. Goods, and S.M. Foiles

STRUCTURE OF GRAIN BOUNDARIES IN Ll2 ALLOYS AT FINITETEMPERATURES: EFFECTS OF DEVIATIONS FROM STOICHIOMETRY 139

M. Yan, V. Vitek, and G.J. Ackland

IN-SITU TEM OBSERVATION OF A STRUCTURAL CHANGE IN A^R E=3-TWIST BOUNDARY IN 01

F.D. Tichelaar and F.W. SchapinkNEAR E=3-TWIST BOUNDARY IN ORDERED Cu3Au 145

DISLOCATION DISSOCIATION IN THE E13 GRAIN BOUNDARY INSILICON 151

Laurent Sagalowicz, Richard Beanland, and William A.T. Clark

HIGH RESOLUTION ANALYSIS OF STRUCTURE AND CHEMISTRY OFGRAIN BOUNDARIES IN SILICON 157

M.J. Kim and R.W. Carpenter

COMBINED EXPERMIMENTAL AND THEORETICAL DETERMINATIONOF THE ATOMIC STRUCTURE OF THE (310) TWIN IN Nb 163

Geoffrey H. Campbell, Wayne E. King, Stephen M. Foiles,Peter Gumbsch, and Manfred Riihle

GRAIN BOUNDARY STRUCTURE AND MORPHOLOGY IN 30° <100>TRICRYSTAL FILMS OF Al 171

N. Thangaraj and U. Dahmen

THE INFLUENCE OF GRAIN BOUNDARY INCLINATION ON THESTRUCTURE AND ENERGY OF E3 TWIN BOUNDARIES IN COPPER 177

Ulrich Wolf, F. Ernst, T. Muschik, M.W. Finnis, andH.F. Fischmeister

RECONSTRUCTION OF A HIGH-ANGLE TWIST GRAIN BOUNDARY BYGRAND-CANONICAL SIMULATED QUENCHING 183

S.R. Phillpot and J.M. Rickman

•Invited Paper






PART III: INTERFACE TRANSFORMATIONS AND REACTIONS

*PHASE TRANSITIONS AT INTERNAL INTERFACES 191Craig Rottman

GRAIN BOUNDARY TRANSFORMATIONS IN Bi-DOPED COPPER 201Elsie C. Urdaneta, David E. Luzzi, and Charles J. McMahon, Jr.

SHAPE TRANSFORMATIONS OF Ge PRECIPITATES IN Al 207P. Lours, K.H. Westmacott, and U. Dahmen

THE DETERMINATION OF INTERFACIAL STRUCTURE AND PHASETRANSITIONS IN Al/Cu AND Al/Ni INTERFACES BY MEANS OFSURFACE EXTENDED X-RAY ABSORPTION FINE STRUCTURE 211

E.V. Barrera and S.M. Heald

T H E ROLE OF SURFACE STRESS IN THE FACETING OF STEPPEDSi(lll) SURFACES 219

Ellen D. Williams, R.J. Phaneuf, N.C. Bartelt, W. Swiech, andE. Bauer

SURFACE RECONSTRUCTION OF PLATINUM AND GOLD AND THEEMBEDDED ATOM MODEL 229

Michael I. Haftel

ATOMIC STRUCTURE OF THE SnO2 (110) SURFACE 235T.J. Godin and John P. LaFemina

THE INTERACTION OF BULK DEFECTS WITH SURFACERECONSTRUCTIONS 241

D.N. Dunn, L.D. Marks, and K.L. Merkle

THERMODYNAMIC AND KINETIC CHARACTERISTICS OF VARIATIONSIN SHAPES OF RIDGES FORMED ON {100} LITHIUM FLUORIDESURFACES 247

J.W. Bullard, A.M. Glaeser, and Alan W. Searcy

ANALYSIS OF FACETED GROWTH HILLOCKS IN MOCVD GROWNEPITAXIAL HgCdTe ON GaAs WITH A NUCLEAR MICROPROBE 253

David N. Jamieson, S.P. Dooley, S.P. Russo, P.N. Johnston,G.N. Pain, and P.W. Leech

*IN-SITU TRANSMISSION ELECTRON MICROSCOPY OF THE ETCHINGOF SILICON (111) SURFACES BY OXYGEN 259

J.M. Gibson and F.M. Ross

STUDY OF THERMAL OXIDE SOLID-STATE REACTION ON GaAsSURFACES 263

Z. Lu, D. Chen, R.M. Osgood, Jr., and D.V. Podlesnik

•REACTIONS AT SOLID INTERFACES 269R. Sinclair, D.H. Ko, T.J. Konno, and T.P. Nolan

PHASE FORMATION AT Pd/Si^Ge INTERFACES 273A. Buxbaum, M. Eizenberg, A. Raizman, and F. Schaffler

DISSOLUTION AND GROWTH KINETICS OF SMALL CRYSTALS INLIQUIDS 279

Michael J. Uttormark, Michael O. Thompson, and Paulette Clancy

•Invited Paper






COARSENING OF A POPULATION OF PRECIPITATES IN A SOLID 285J.P. Lavine and G.A. Hawkins

DIFFUSION LIMITED INTERFACE KINETICS IN MULTICOMPONENTSYSTEMS 291

William D. Hopfe and J.E. Morral

THE STABILIZATION OF FACE-CENTERED-CUBIC TITANIUM 297

Alan F. Jankowski and Mark A. Wall

PART IV: INTERFACIAL STRUCTURE/PROPERTIES RELATIONSHIP

CORRELATIONS BETWEEN THE STRUCTURE, ENERGY ANDDIFFUSIVITY OF GRAIN AND INTERPHASE BOUNDARIES 305

T. Muschik, W. Gust, B. Predel, U. Wolf, P. Gumbsch,J. Sommer, and C. Herzig

GRAIN BOUNDARY STRUCTURE CONTROL FOR INTERGRANULARSTRESS-CORROSION RESISTANCE 311

G. Palumbo, P.J. King, P.C. Lichtenberger, K.T. Aust, andU. Erb

STRUCTURAL AND ELECTRICAL PROPERTIES OF ZnO FILMSDEPOSITED ON GaAs SUBSTRATES BY RF MAGNETRONSPUTTERING 317

Hong Koo Kim and Michelle Mathur

IMPEDANCE SPECTROSCOPIC STUDY OF ZINC OXIDE VARISTORS 323A. Sadhu, G. Banerjee, M.J. Patni, and T.R. Ramamohan

EFFECT OF Yb DIFFUSION BARRIERS ON THE PROPERTIES OFIn/n-Hg! XcLTe CONTACTS 329

Patrick W. Leech, Geoffrey K. Reeves, Yuan H. Li, andMartyn H. Kibel

STUDY OF THE DEFECT LEVELS AND INTERFACE PROPERTIES OFCdTe AND CdS POLYCRYSTALLINE THIN FILMS 335

F. Abou-Elfotouh, S. Ashour, S.A. Alkuhaimi, J. Zhang,D.J. Dunlavy, and L.L. Kazmerski

STUDY OF MAGNETIC PROPERTIES OF COBALT FILMS GROWN ONGaAs (110) AND Au (111) SUBSTRATES USING FERROMAGNETICRESONANCE 341

K.L. Hogue, C. Kota, and H.M. Naik

SUBSTRATE SURFACE EFFECTS ON THE PROPERTIES OF SPUTTER-DEPOSITED AND LASER-IRRADIATED FILMS 347

A.J. Pedraza, M.J. Godbole, and L. Romana

PART V: INTERFACES IN DEFORMATION

*THE EFFECT OF GRAIN BOUNDARY CHEMISTRY ON THE SLIPTRANSMISSION PROCESS THROUGH GRAIN BOUNDARIES INNi3Al 357

I.M. Robertson, T.C. Lee, Raja Subramanian, and H.K. Birnbaum

SLIP TRANSFER ACROSS INTERPHASE BOUNDARIES INDIRECTIONALLY SOLIDIFIED 0+(7+7')Ni-Fe-Al ALLOYS 369

A. Misra and R. Gibala

*Invited Paper






FRACTURE STRENGTHS OF INDIVIDUAL GRAIN BOUNDARIES INNi3Al USING A MINIATURIZED DISK BEND TEST 375

Douglas E. Meyers and Alan J. Ardell

AN ATOMISTIC STUDY OF HYDROGEN EFFECTS ON THE FRACTUREOF TILT BOUNDARIES IN NICKEL 381

N.R. Moody and S.M. Foiles

GRAIN-BOUNDARY-MEDIATED FAILURE IN POLYCRYSTALS 387C.S. Nichols and D.A. Smith

CHARACTERIZATION OF PLASTICITY IN BIMATERIAL INTERFACEFRACTURE BY STM 393

Clifford P. Warner and Dawn A. Bonnell

DIFFUSION-CONTROLLED DECOHESION USING A Cu-Sn ALLOY ASA MODEL SYSTEM 399

Dafni Bika and Charles J. McMahon, Jr.

THE DIRECTIONALITY OF INTERFACIAL CRACKING INBIMATERIALS 405

Jian-Sheng Wang and Glenn E. Beltz

PART VI: INTERFACIAL SEGREGATION AND DIFFUSION

*HYDROGEN SEGREGATION TO INTERFACES 413A.D. Marwick, Joyce C. Liu, W. Krakow, and R.D. Thompson

ANALYSIS OF OXYGEN DISTRIBUTION IN INTERFACES IN SiCWHISKER REINFORCED Si^-BASED COMPOSITES 421

K. Das Chowdhury, R.W. Carpenter, and W. Braue

THE EFFECT OF TRACE ELEMENT SEGREGATION TO Fe/SAPPHIREINTERFACES 427

D.P. Pope and M.A. Smith

EFFECTS OF RARE-EARTH ON PROPERTIES OF HEAT-RESISTANTSTEELS AND ITS INTERACTION WITH INTERFACES 433

Xu Jihua, Han Guichun, Lu Guorong, He Shuping, and Jin Dasheng

EFFECTS OF CATION SEGREGATION AT OXIDE GRAIN BOUNDARIESON GRAIN BOUNDARY DIFFUSION AND OXIDATION KINETICS OFNICKEL 439

C M . Cotell, M.J. Bennett, and A.J. Garratt-Reed

AN ATOM PROBE FIELD ION MICROSCOPE INVESTIGATION OF THEROLE OF BORON IN PRECIPITATES AND AT GRAIN BOUNDARIESIN NiAl 445

Raman Jayaram and M.K. Miller

TEM AND HREM INVESTIGATION OF THE PRECIPITATION OFCOBALT AND NICKEL IN POLYCRYSTALLINE SILICON 451

H.J. Moller, Juyong Chung, and Lan Huang

COMPARISON OF THERMALLY- AND IRRADIATION-INDUCED GRAINBOUNDARY SEGREGATION IN AUSTENITIC STAINLESS STEELS 457

Edward A. Kenik

KINETICS OF DOPANT DISTRIBUTION IN LPE GROWN GaAsEPI-LAYER 463

Y. Okamoto, Y. Akagi, and M. Koba

•Invited Paper






GERMANIUM CONCENTRATION PROFILES ACROSS INTERFACES ANDCLOSE TO DISLOCATIONS IN CVD Si^Ge^ON-Si JUNCTIONS 469

J. Bruley, F. Ernst, and K. Ljutovich

PREDICTION OF FIRST PHASE FORMATION AT Au-METAL INTER-FACES USING THE EFFECTIVE HEAT OF FORMATION MODEL 475

R. Pretorius, T.K. Marais, A.E. Muller, and D. Knoesen

ENVIRONMENT SENSITIVE EMBEDDING ENERGIES OF IMPURITIES,AND GRAIN BOUNDARY RELAXATION IN IRON 481

Genrich L. Krasko

ATOMISTIC SIMULATION OF VOID FORMATION IN IC METALINTERCONNECTS 487

A.S. Nandedkar and G.R. Srinivasan

POSSIBLE MECHANISM OF THE STRESS EVOLUTION AND POINTDEFECTS GENERATION DURING THE SOLID PHASE EPITAXIALSILICIDE GROWTH 493

A.G. Italjantsev and A. Yu. Kuznetsov

ON THE STUDY OF GRAIN BOUNDARY SEGREGATION USING X-RAYDIFFRACTION AND COMPUTER SIMULATION 499

C.A. Counterman, I. Majid, P.D. Bristowe, and R.W. Balluffi

SURFACE WETTING BY A SECOND PHASE IN A LIQUID BINARYALLOY 505

J.C. Joud

THERMODYNAMIC FACTORS GOVERNING INTERFACIAL CHEMISTRYAND WETTING IN BINARY ALLOY-REFRACTORY OXIDE SYSTEMS 511

V. Merlin, P. Kritsalis, L. Coudurier, and N. Eustathopoulos

GRAIN BOUNDARY DIFFUSIVITY MEASUREMENT THROUGH KINETICANALYSIS OF DISCONTINUOUS PRECIPITATION 517

I. Manna, J.N. Jha, S.K. Pabi, and W. Gust

THE ROLE OF THERMOMECHANICAL ENERGY IN DIFFUSIONKINETICS AND CRYSTALLINITY OF MECHANICALLY ALLOYEDTITANIUM ALUMINIDES 523

Laura Dahl, Mark Shepler, and Alexis S. Nash

PART VII: INTERFACES INTHIN FILMS AND MULTILAYERS

•OBSERVATIONS OF GRAIN GROWTH IN THIN FILMS 531D.A. Smith, S.J. Townsend, and C.S. Nichols

•INTERFACIAL STRUCTURE AND EVOLUTION IN MESOTAXIALCoSiJSi HETEROSTRUCTURES 543

R. Hull, Y.F. Hsieh, A.E. White, and K.T. Short

MORPHOLOGY OF Si/TUNGSTEN-SILICIDE/Si INTERLAYERS 555N. David Theodore, F. Secco d'Aragona, and Scott Blackstone

SYNTHESIS AND CHARACTERIZATION OF Mo(Ta)/MoSiMICROLAMINATES x 561

H. Kung, B.M. Vyletel, and A.K. Ghosh

•Invited Paper






MICROSTRUCTURE AND PROPERTIES OF MoSi2/Nb INTERFACESWITH AND WITHOUT ALUMINA COATING 567

L. Xiao and R. Abbaschian

EFFECT OF AN INTERFACIAL Ti LAYER ON THE FORMATION OFCoSL ON Si 575

K. Barmak, L.A. Clevenger, P.D. Agnello, E. Ganin, M. Copel,P. Dehaven, J. Falta, F.M. d'Heurle, and C. Cabral Jr.

THE EVOLUTION OF TITANIUM-SILICON INTERFACES ASMONITORED BY X-RAY DIFFRACTION 581

Thomas Novet, John McConnell, and David C. Johnson

CoSi2 FORMATION THROUGH Co/Ti MULTILAYER REACTING WITHSi-(IOO) SUBSTRATES 587

Feng Hong, Bijoy Patnaik, and George A. Rozgonyi

XAFS STUDIES OF Cr-Si-0 INTERFACES WITH Al ANDPOLYIMIDE BY USING SYNCHROTRON RADIDATION 593

Kiyoshi Ogata, Asao Nakano, Yasunori Narizuka,Takayoshi Watanabe, and Tetsuya Yamazaki

INTERFACIAL STRUCTURES OF MoSi2-Mo5Si3 FUTECTIC ALLOYS 599H. Kung, H. Chang, and R. Gibala

VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRICCHARACTERIZATION OF POLYCRYSTALLINE SILICON THINFILM MULTILAYER STRUCTURES 605

Paul G. Snyder, Yi-Ming Xiong, John A. Woollam, and Eric R. Krosche

COMPARISON OF DIFFERENT THICKNESS MEASUREMENTS OFOXIDE FILMS ON SILICON 611

Shou-Chen Kao and Robert H. Doremus

THE EFFECT OF HYDROGENATED AMORPHOUS SILICON ON THEFORMATION RATE KINETICS AND CRYSTALLOGRAPHY OFPALLADIUM SILICIDE FILMS 617

N.R. Manning, Haydn Chen, J.R. Abelson, and L.H. Allen

THE ROLE OF CHEMICAL INTERACTIONS IN THE STABILITY OFARTIFICIAL METALLIC SUPERLATTICES 623

M. Sluiter and P.E.A. Turchi

THE CONTROL OF INTERFACIAL REACTIONS VIA LENGTH SCALESOF ULTRATHIN-FILM MODULATED COMPOSITES 629

Loreli Fister, Thomas Novet, Christopher A. Grant, John McConnell,and David C. Johnson

EVOLUTION OF STRUCTURE WITH Fe LAYER THICKNESS IN LOWDIMENSIONAL Fe/Tb MULTILAYERED STRUCTURES 635

V.G.-Harris, K.D. Aylesworth, W.T. Elam, N.C. Koon,R. Coehoorn, and W. Hoving

CHARACTERIZATION OF Pd/V MULTILAYER STRUCTURES BY HIGH-ANGLE ANNULAR DARK-FIELD MICROSCOPY AND HIGH RESOLUTIONTEM 641

J. Liu, Y. Cheng, G.D. Lewen, and M.B. Stearns

CHARACTERIZATION OF INCONEL/CARBON MULTILAYERSTRUCTURES 647

J. Liu, Y. Cheng, M.W. Lund, Q. Wang, andA. Higgs






CHARACTERIZATION OF INTERFACES IN SiGe SUPERLATTICESBY COMBINED GRAZING INCIDENCE X-RAY FLUORESCENCE ANDREFLECTIVITY 653

Adrian R. Powell, Jaroslav Bradler, Charles R. Thomas,Richard A. Kubiak, D. Keith Bowen, Matthew Wormington, andJohn M. Hudson

INTERFACE REACTIONS IN BILAYERS OF ALUMINUM ANDNICKEL-CHROMIUM ALLOY 659

S.M. Heald, Zhengquan Tan, and J.K.D. Jayanetti

USING ULTRATHIN-FILM, MODULATED COMPOSITES TO CONTROLTHE REACTION MECHANISM OF TERNARY COMPOUND FORMATION 665

Loreli Fister and David C. Johnson

STRUCTURAL PROPERTIES OF Co/Re SUPERLATTICES 671Y. Huai, R.W. Cochrane, Y. Shi, H.E. Fischer, and M. Sutton

DETERMINATION OF INTERMETALLIC FORMATION MECHANISMUSING DIFFERENTIAL SCANNING CALORIMETRY OF MULTI-LAYERED THIN FILMS 677

T.E. Schlesinger, S.M. Prokes, and R.C. Cammarata

STRUCTURAL STUDIES OF (ZnSe/FeSe) SUPERLATTICES BYTRANSMISSION ELECTRON MICROSCOPY 683

K. Park, L. Salamanca-Riba, and B.T. Jonker

HIGH RESOLUTION ELECTRON MICROSCOPY OBSERVATIONS ABOUTTHE INTERFACE STRUCTURE IN A Ti/TiN MULTILAYER MATERIAL 689

X.G. Ning, L.P. Guo, R.F. Huang, J. Gong, B.H. Yu, L.S. Wen,and H.Q. Ye

ELECTRICAL RESISTIVITY AND CRYSTAL STRUCTURE OF NICKEL-BASED MULTILAYER THIN FILMS 695

M. Tan, E. Haftek, A. Waknis, and J.A. Barnard

MICROSTRUCTURAL EVOLUTION OF Ti/Ni AND Ni/Ti BILAYERTHIN FILMS 701

E. Haftek, M. Tan, A. Waknis, and J.A. Barnard

SOI INTERFACE STRUCTURES IN SELECTIVE EPITAXIAL GROWTH 707Zara S. Weng, R. Gronsky, J.C. Lou, and W.G. Oldham

LOW-TEMPERATURE DEVICE-QUALITY SiOJSi (100) INTERFACESPREPARED BY A COMBINED REMOTE PLASMA OXIDATION-DEPOSITION PROCESS 713

T. Yasuda, Y. Ma, and G. Lucovsky

PART VIII: INTERFACES IN NANOCRYSTALLINE MATERIALS

FORMATION AND STABILITY OF NANOCRYSTALLINE Nb-Cu ALLOYS 721Yoshio R. Abe, J.C. Holzer, and W.L. Johnson

GRAIN GROWTH BEHAVIOR OF NANOCRYSTALLINE NICKEL 727A.M. El-Sherik, K. Boylan, U. Erb, G. Palumbo, and K.T. Aust

PREPARATION AND SINTERING STUDIES OF NANOMETER-SIZED,YCRYSTALLINE ZrO2R. Wurschum, G. Soyez, and H.-E. Schaefer

POLYCRYSTALLINE ZrO2 733






ALLOY EFFECTS AND EXTENDED SOLUBILITIES IN BINARYMIXTURES OF NANOMETER-SIZED Fe-Cu CRYSTALS 739

J. Eckert, R. Birringer, J.C. Holzer, C.E. Krill III,and W.L. Johnson

SYNTHESIS AND CHARACTERIZATION OF BALL-MILLEDNANOCRYSTALLINE FCC METALS 745

J. Eckert, J.C. Holzer, C.E. Krill III, and W.L. Johnson

A COMPARISON OF THE CORROSION BEHAVIOR OF NANO-CRYSTALLINE AND NORMAL CRYSTALLINE NICKEL 751

R. Rofagha, R. Langer, A.M. El-Sherik, U. Erb, G. Palumbo,and K.T. Aust

X-RAY STUDY OF INTERFACIAL INTERACTIONS IN HIGHLYMILLED Sn-Ge POWDERS 757

J.K.D.S. Jayanetti, S.M. Heald, and Z. Tan

PART IX: METAL/CERAMIC INTERFACES

•STRUCTURAL RELAXATIONS AT METAL/METAL OXIDE INTERFACES 763W. Mader

EQUILIBRIUM AND NON-EQUILIBRIUM METAL-CERAMIC INTER-FACES 775

Y. Gao and K.L. Merkle

METAL-OXIDE INTERFACIAL STRUCTURES PRODUCED BY INTERNALOXIDATION 781

P. Lu, I.-C. Tung, and F. Cosandey

ROLE OF SURFACE DEFECTS IN METAL-CERAMIC BONDING 787S.M. Mukhopadhyay and C.S. Chen

TOE ROLE OF ION SPECIES ON THE ADHESION ENHANCEMENT OFIGN BEAM MIXED Fe/AU)3 SYSTEMS 793

J.E. Pawel, C.J. McHargue, L.J. Romana, L.L. Horton, and J.J. Wert

INTERFACE ELECTRONIC AND MAGNETIC STRUCTURES OF LAYEREDFe IN CONTACT WITH MgO 799

Young Keun Kim, Michael E. McHenry,Manuel P. Oliveria, and Mark E. Eberhart

PART X: INTERFACES IN CERAMICS AND COMPOSITES

"INTERFACE STRUCTURE OF IRON OXIDE THIN FILMS GROWN ONSAPPHIRE AND SINGLE-CRYSTAL MgO 807

Ian M. Anderson, Lisa M. Tietz, and C. Barry Carter

EXPERIMENTAL DETERMINATION OF RELAXATION OF INTERPHASEINTERFACES IN OXIDE EUTECTICS 815

Vinayak P. Dravid, V. Ravikumar, G. Dhalenne, and A. Revcolevschi

ELECTRONIC AND STRUCTURAL PROPERTIES OF INTERFACESCREATED BY POTASSIUM DEPOSITION ON TiO2 (110)SURFACES 823

R.J. Lad and L.S. Dake

A STUDY OF DOMAIN BOUNDARY STRUCTURES IN LEAD TITANATESINGLE CRYSTALS 829

C.C. Chou, J. Li, and C M . Wayman

•Invited Paper






HIGH RESOLUTION ELECTRON MICROSCOPY OF INTERCALATEDPHASES IN THE Y-Ba-Cu-0 SYSTEM 835

C.P. Burmester, M. Fendorf, L.T. Wille, and R. Gronsky

TEM STUDY OF (015) GROWTH TWINS IN THE Bi-Sr-Ca-Cu-0SUPERCONDUCTORS OBTAINED BY MELT QUENCH TECHNIQUE 841

N. Ohnishi, M. Sankararaman, and H. Sato

SIMULATION OF Y-Ba-Cu-O EPITAXIAL GROWTH AND MICRO-STRUCTURE FORMATION 847

C.P. Burmester, L.T. Wille, and R. Gronsky

HREM STUDY ON THE INTERFACIAL STRUCTURE IN OXYGEN-DEFECTIVE CaMnO, SYSTEM 853

H. Shibahara and H. Taguchi

ANALYTICAL ELECTRON MICROSCOPY AND HIGH-RESOLUTIONELECTRON MICROSCOPY STUDIES OF GRAIN-BOUNDARY FILMSIN SILICON NITRIDE-BASED CERAMICS 859

H.-J. Kleebe and M. Ruhle

HIGH RESOLUTION ELECTRON MICROSCOPY STUDIES ON THEMICROSTRUCTURE OF 0-Si3N4w/Al INTERFACES IN A/J-Si3N4w/6061Al COMPOSITE 865

X.G. Ning, J. Pan, K.Y. Hu, and H.Q. Ye

STUDY OF INTERFACES IN XD™ Al/TiCD METAL MATRIXCOMPOSITES 871

R. Mitra, W.A. Chiou, J.R. Weertman, M.E. Fine, andR.M. Aikin, Jr.

INTERFACE AND NEAR-INTERFACE MICROSTRUCTURE OFDISCONTINUOUS REINFORCED METAL MATRIX COMPOSITES 877

James P. Lucas, Nancy Y.C. Yang, and John J. Stephens

AUTHOR INDEX 885

SUBJECT INDEX 889

XIV






Preface

This volume contains papers presented at the Symposium on "Structure and Propertiesof Interfaces in Solids" held at the 1991 Fall Meeting of the Materials Research Society, whichtook place in Boston, Massachusetts, from December 2-6, 1991. This symposium was intendedas a follow-up to the Symposium "Interfacial Structure, Properties, and Design" held in Reno,Nevada, at the MRS Spring Meeting of 1988, and published as MRS Proceedings, Volume 122.The 1991 international meeting was designed to bring together scientists in the interfaces areafrom all over the world to a single four-day symposium, focused on issues arising from therelationships between the structure, chemistry, and properties of interfaces in metals, ceramics,semiconductors, and composites. The proceedings contain a total of 133 papers, including 14invited papers, drawn from the 87 platform presentations and the 104 posters. All themanuscripts were peer-reviewed, and our thanks are due to the session chairmen and individualreferees, without whose assistance neither the program nor the preparation of the proceedingswould have advanced so smoothly.

The proceedings are organized basically in the order of presentation at the meeting,starting with recent developments in structural analysis and characterization of interfaces,followed by current research in the crystallography and role of interfacial defects. There is alarge section devoted to grain boundaries alone, which leads into interphase boundaries andphase transformations. Another large section on interfaces and structures in thin films andmultilayers reflects the growing awareness of the dependence of thin film properties on theseboundaries. The recent interest in composites and high temperature materials is also evidencedby the number of papers addressing these topics. We conclude the proceedings with a sectionon interfaces in ceramics, in which are included studies of interfaces in high temperaturesuperconductors.

If there is any significant difference in emphasis between the 1988 and 1991 symposia,it is in the greater emphasis on imaging the atomic structure of interfaces in 1991, and thevaluable insight that such images can now provide us with in interpreting the properties. Somespectacular examples of in-situ observations in the electron microscope, presented at the meetingand described in this volume, brought this point home even more forcefully.

As usual, it would be impossible to bring together such a distinguished, internationalgroup of scientists were it not for the generosity of the symposium sponsors. These are: theMaterials Sciences Division of the Lawrence Berkeley Laboratory; General ElectricCorporation; Hitachi Scientific Instruments; JEOL, USA, Inc.; and Topcon, Inc. Finally, wewould like to thank Deborah Clark, Gretchen Hermes, and Theda Crawford for their assistancein organizing the review process, and in the preparation of the final proceedings.

William A.T. ClarkUlrich DahmenClyde L. Briant

January 23, 1992






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 219—Amorphous Silicon Technology—1991, A. Madan,Y. Hamakawa, M. Thompson, P.C. Taylor, P.G. LeComber,1991, ISBN: 1-55899-113-1

Volume 220—Silicon Molecular Beam Epitaxy, 1991, J.C. Bean, E.H.C. Parker,S. Iyer, Y. Shiraki, E. Kasper, K. Wang, 1991, ISBN: 1-55899-114-X

Volume 221—Heteroepitaxy of Dissimilar Materials, R.F.C. Farrow,J.P. Harbison, P.S. Peercy, A. Zangwill, 1991, ISBN: 1-55899-115-8

Volume 222—Atomic Layer Growth and Processing, Y. Aoyagi, P.D. Dapkus,T.F. Kuech, 1991, ISBN: 1-55899-116-6

Volume 223—Low Energy Ion Beam and Plasma Modification of Materials,J.M.E. Harper, K. Miyake, J.R. McNeil, S.M. Gorbatkin, 1991,ISBN: 1-55899-117-4

Volume 224—Rapid Thermal and Integrated Processing, M.L. Green,J.C. Gelpey, J. Wortman, R. Singh, 1991, ISBN: 1-55899-118-2

Volume 225—Materials Reliability Issues in Microelectronics, J.R. Lloyd,P.S Ho, C.T. Sah, F. Yost, 1991, ISBN: 1-55899-119-0

Volume 226—Mechanical Behavior of Materials and Structures inMicroelectronics, E. Suhir, R.C. Cammarata, D.D.L. Chung,1991, ISBN: 1-55899-120-4

Volume 227—High Temperature Polymers for Microelectronics, D.Y. Yoon,D.T. Grubb, I. Mita, 1991, ISBN: 1-55899-121-2

Volume 228—Materials for Optical Information Processing, C. Warde,J. Stamatoff, W. Wang, 1991, ISBN: 1-55899-122-0

Volume 229—Structure/Property Relationships for Metal/Metal Interfaces,A.D Romig, D.E. Fowler, P.D. Bristowe, 1991, ISBN: 1-55899-123-9

Volume 230—Phase Transformation Kinetics in Thin Films, M. Chen,M. Thompson, R. Schwarz, M. Libera, 1991, ISBN: 1-55899-124-7

Volume 231—Magnetic Thin Films, Multilayers and Surfaces, H. Hopster,S.S.P. Parkin, G. Prinz, J.-P. Renard, T. Shinjo, W. Zinn, 1991,ISBN: 1-55899-125-5

Volume 232—Magnetic Materials: Microstructure and Properties, T. Suzuki,Y. Sugita, B.M. Clemens, D.E. Laughlin, K. Ouchi, 1991,ISBN: 1-55899-126-3

Volume 233—Synthesis/Characterization and Novel Applications of MolecularSieve Materials, R.L. Bedard, T. Bein, M.E. Davis, J. Garces,V.A. Maroni, G.D. Stucky, 1991, ISBN: 1-55899-127-1

Volume 234—Modern Perspectives on Thermoelectrics and Related Materials,D.D. Allred, G. Slack, C. Vining, 1991, ISBN: 1-55899-128-X

Volume 235—Phase Formation and Modification by Beam-Solid Interactions,G.S. Was, L.E. Rehn, D. Follstaedt, 1992, ISBN: 1-55899-129-8

Volume 236—Photons and Low Energy Particles in Surface Processing,C Ashby, J.H. Brannon, S. Pang, 1992, ISBN: 1-55899-130-1

Volume 237—Interface Dynamics and Growth, K.S. Liang, M.P. Anderson,R.F. Bruinsma, G. Scoles, 1992, ISBN: 1-55899-131-X

me 238—Structure and Properties of Interfaces in Materials,W.A.T. Clark, C.L. Briant, U. Dahmen, 1992,ISBN: 1-55899-132-8






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 239—Thin Films: Stresses and Mechanical Properties III, W.D. Nix,J.C. Bravman, E. Arzt, L.B. Freund, 1992, ISBN: 1-55899-133-6

Volume 240—Advanced III-V Compound Semiconductor Growth, Processingand Devices, SJ. Pearton, D.K. Sadana, J.M. Zavada, 1992,ISBN: 1-55899-134-4

Volume 241—Low Temperature (LT) GaAs and Related Materials, G.L. Witt,R. Calawa, U. Mishra, E. Weber, 1992, ISBN: 1-55899-135-2

Volume 242—Wide Ban-Gap Semiconductors, T.D. Moustakas, J.I. Pankove,Y. Hamakawa, 1992, ISBN: 1-55899-136-0

Volume 243—Ferroelectric Thin Films II, A.I. Kingon, E.R. Myers, B. Tuttle,1992, ISBN: 1-55899-137-9

Volume 244—Optical Waveguide Materials, M.M. Broer, H. Kawazoe,G.H. Sigel, R.Th. Kersten, 1992, ISBN: 1-55899-138-7

Volume 245—Advanced Cementitious Systems: Mechanisms and Properties,F.P. Glasser, P.L. Pratt, T.O. Mason, J.F. Young, GJ. McCarthy,1992, ISBN: 1-55899-139-5

Volume 246—Shape-Memory Materials and Phenomena—FundamentalAspects and Applications, C.T. Liu, M. Wuttig, K. Otsuka,H. Kunsmann, 1992, ISBN: 1-55899-140-9

Volume 247—Electrical, Optical, and Magnetic Properties of Organic SolidState Materials, L.Y. Chiang, A.F. Garito, DJ. Sandman, 1992,ISBN: 1-55899-141-7

Volume 248—Complex Fluids, D. Weitz, E.Sirota, T. Witten, J. Israelachvili,1992, ISBN: 1-55899-142-5

Volume 249—Synthesis and Processing of Ceramics: Scientific Issues,W.E. Rhine, T.M. Shaw, RJ. Gottschall, Y. Chen, 1992,ISBN: 1-55899-143-3

Volume 250—Chemical Vapor Deposition of Refractory Metals and CeramicsII, T.M. Besman, B.M. Gallois, J. Warren, 1992,ISBN: 1-55899-144-1

Volume 251—Pressure Effects on Materials Processing and Design,K. Ishizaki, E. Hodge, 1992, ISBN: 1-55899-145-X

Volume 252—Tissue-Inducing Biomaterials, M. Flanagan, L. Cima, E. Ron,1992, ISBN: 1-55899-146-8

Volume 253—Applications of Multiple Scattering Theory to Materials Science,W.H. Butler, P.H. Dederichs, A. Gonis, R. Weaver, 1992,ISBN: 1-55899-147-6

Volume 254—Specimen Preparation for Transmission Electron Microscopy ofMaterials III, R. Anderson, J. Bravman, B. Tracy, 1992,ISBN: 1-55899-148-4

Volume 255—Hierarchically Structured Materials, LA. Aksay, E. Baer,M. Sarikaya, D.A. Tirrell, 1992, ISBN: 1-55899-149-2

Volume 256—Light Emission from Silicon, S.S. Iyer, L.T. Canham,R.T. Collins, 1992, ISBN: 1-55899-150-6

Prior Materials Research Society Symposium Proceedingsavailable by contacting Materials Research Society.






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