spice model of mp4212 (standard+bds n&p model) in spice park

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

Device Modeling Report

Bee Technologies Inc.

COMPONENTS: Power MOSFET (Model Parameter) PART NUMBER: MP4212 MANUFACTURER: TOSHIBA Body Diode (Model Parameter) / ESD Protection Diode REMARK: N&P Channel Model


MOSFET MODEL

Pspice model parameter

Model description

LEVEL

L Channel Length

W Channel Width

KP Transconductance

RS Source Ohmic Resistance

RD Ohmic Drain Resistance

VTO Zero-bias Threshold Voltage

RDS Drain-Source Shunt Resistance

TOX Gate Oxide Thickness

CGSO Zero-bias Gate-Source Capacitance

CGDO Zero-bias Gate-Drain Capacitance

CBD Zero-bias Bulk-Drain Junction Capacitance

MJ Bulk Junction Grading Coefficient

PB Bulk Junction Potential

FC Bulk Junction Forward-bias Capacitance Coefficient

RG Gate Ohmic Resistance

IS Bulk Junction Saturation Current

N Bulk Junction Emission Coefficient

RB Bulk Series Resistance

PHI Surface Inversion Potential

GAMMA Body-effect Parameter

DELTA Width effect on Threshold Voltage

ETA Static Feedback on Threshold Voltage

THETA Modility Modulation

KAPPA Saturation Field Factor

VMAX Maximum Drift Velocity of Carriers

XJ Metallurgical Junction Depth

UO Surface Mobility


P-Channel Model

Transconductance Characteristic

Circuit Simulation Result

Comparison table

Id(A) gfs

Error(%) Measurement Simulation

-0.500 1.800 1.810 0.556

-1.000 2.500 2.505 0.200

-2.000 3.500 3.500 0.000

-5.000 5.500 5.505 0.091


Open

R1

100MEG

V20Vdc

V1

-10Vdc

Open

U17

MP4212

0

V3

0Vdc

0

V_V2

0V -2V -4V -6V -8V -10V

I(V3)

0A

-2A

-4A

-6A

-8A

-10A

Vgs-Id Characteristic

Circuit Simulation result

Evaluation circuit


Comparison Graph Circuit Simulation Result

Simulation Result

ID(A) VGS(V)

Error (%) Measurement Simulation

-1.000 -2.500 -2.511 0.440

-2.000 -2.850 -2.844 -0.211

-4.000 -3.300 -3.324 0.727

-6.000 -3.700 -3.695 -0.135

-8.000 -4.000 -4.004 0.100

-10.000 -4.300 -4.291 -0.209


VDS0Vdc

R1

100MEG

Open

0

0

V3

0Vdc

U17

MP4212

VGS

-10Vdc

Open

V_VDS

0V -50mV -150mV -250mV -350mV -450mV

I(V3)

0A

-0.5A

-1.0A

-1.5A

-2.0A

-2.5A

-3.0A

Rds(on) Characteristic


Evaluation circuit

Simulation Result

ID=-2.5A, VGS=-10V Measurement Simulation Error (%)

RDS (on) 400.000 m 400.000 m 0.000


V2

0Vdc

I2-5Adc

-

+

W1

ION = 0uAIOFF = 100uA

W

D1

Dbreak

U17

MP4212

0

R1

100MEG

0

Open

I1

TD = 0

TF = 10nPW = 600uPER = 1000u

I1 = 0

I2 = 1m

TR = 10n

V1-48Vdc

open

0

Time*1mS

0 8n 16n 24n 32n 40n

V(W1:4)

0V

-5V

-10V

-15V

-20V

Gate Charge Characteristic


Evaluation circuit

Simulation Result

VDD=-48V,ID=-5A ,VGS=-10V

Measurement Simulation Error (%)

Qgs 3.500 nC 3.545 nC 1.286

Qgd 10.000 nC 10.046 nC 0.460

Qg 22.000 nC 18.364 nC -16.527


Capacitance Characteristic

Simulation Result

VDS(V) Cbd(pF)


0.100 475.000 471.000 -0.842

0.200 465.000 462.000 -0.645

0.500 440.000 438.000 -0.455

1.000 400.000 403.000 0.750

2.000 350.000 351.000 0.286

5.000 255.000 260.000 1.961

10.000 188.000 190.000 1.064

20.000 134.000 135.000 0.746

50.000 75.000 75.000 0.000

Simulation

Measurement


V2TD = 2u

TF = 4nPW = 10uPER = 2000u

V1 = 0

TR = 3n

V2 = -20

RG

4.7

R9

100MEG

R2

12

Open

0

U17

MP4212

V1-30Vdc

L2

50nH

L1

30nH

0

0

open

R1

4.7

Time

2.000us 2.100us1.912us 2.152us

V(R1:1) V(L2:2)/3

0V

-5V

-10V

-15V

Switching Time Characteristic


Evaluation circuit

Simulation Result

ID=-2.5A, VDD=-30V VGS=0/10V

Measurement Simulation Error(%)

ton 45.000 ns 44.933 ns -0.149

VGS

ID


Open

Open

0

Vv ariable

-10Vdc

0

R1

100MEG

Vstep

-10Vdc

U17

MP4212

Vdsense

0Vdc

V_Vvariable

0V -2V -4V -6V -8V -10V

I(Vdsense)

0A

-2A

-4A

-6A

-8A

-10A

Output Characteristic


Evaluation circuit

VGS=-2.0V

-2.5V

-3.0V

-6V

-3.5V

-4.0V -8.0V

-10.0V


Open

R1

0.01m

Open

0

0

U17

MP4212

V1

0Vdc

Ropen

100MEG

V_V1

0V 0.4V 0.8V 1.2V 1.6V 2.0V

I(R1)

100mA

1.0A

10A

30A

BODY DIODE Forward Current Characteristic


Evaluation Circuit



Simulation Result

IDR(A) VDS(V)

Measurement VDS(V)

Simulation %Error

0.100 0.630 0.632 0.317

0.200 0.670 0.668 -0.299

0.500 0.720 0.720 0.000

1.000 0.770 0.769 -0.130

2.000 0.830 0.834 0.482

5.000 0.980 0.997 1.735

10.000 1.180 1.177 -0.254


V1

TD = 20.468n

TF = 10nsPW = 1usPER = 100us

V1 = -9.4v

TR = 10ns

V2 = 10.6v

R1

50

Open

U18

MP4212

Ropen

100MEG

0

Open

0

Time

0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us 1.4us 1.5us 1.6us

I(R1)

-400mA

-300mA

-200mA

-100mA

-0mA

100mA

200mA

300mA

400mA

Reverse Recovery Characteristic Circuit Simulation Result

Evaluation Circuit

Compare Measurement vs. Simulation


trj 50.000 ns 49.878 ns -0.244

trb 76.000 ns 82.207 ns 8.167

trr 126.000 ns 132.085 ns 4.829


Reverse Recovery Characteristic Reference

Trj=50(ns) Trb=76(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50

Relation between trj and trb

Example


Ropen

100MEG

R1

0.01m

Open

V1

0Vdc

open

0

0

U17

MP4212

V_V1

0V -5V -10V -15V -20V -25V -30V -35V -40V -45V

I(R1)

0A

-1mA

-2mA

-3mA

-4mA

-5mA

-6mA

-7mA

-8mA

-9mA

-10mA

ESD PROTECTION DIODE Zener Voltage Characteristic


Evaluation Circuit


Zener Voltage Characteristic Reference


N-Channel Model

Transconductance Characteristic


Comparison table

Id(A) gfs


0.500 2.100 2.150 2.381

1.000 3.000 3.010 0.333

2.000 3.800 3.800 0.000

5.000 6.100 6.150 0.820


U19

MP4212

0

R1

100MEG

V3

0VdcV1

10Vdc

Open

V20Vdc

Open

0

V_V2

0V 2V 4V 6V 8V 10V

I(V3)

0A

2A

4A

6A

8A

10A

Vgs-Id Characteristic


Evaluation circuit



Simulation Result

ID(A) VGS(V)

Error (%) Measurement Simulation

1.000 2.700 2.701 0.037

2.000 3.000 3.011 0.367

4.000 3.500 3.446 -1.543

6.000 3.800 3.790 -0.263

8.000 4.000 4.081 2.025

10.000 4.400 4.339 -1.386


VDS0Vdc

VGS

10Vdc

Open

V3

0Vdc

Open

R1

100MEG

0

U19

MP4212

0

V_VDS

0V 200mV 400mV 500mV

I(V3)

0A

1.0A

2.0A

3.0A

3.5A

Rds(on) Characteristic


Evaluation circuit

Simulation Result

ID=2.5A, VGS=10V Measurement Simulation Error (%)

RDS (on) 300.000 m 300.000 m 0.000


I25Adc

V148Vdc

-

+W1

ION = 0uAIOFF = 100uAW

0

V2

0Vdcopen

0

U19

MP4212

Open

I1

TD = 0

TF = 10nPW = 600uPER = 1000u

I1 = 0

I2 = 1m

TR = 10n Ropen

100MEG

D1

Dbreak

0

Time*1mS

0 20n 40n 60n 80n

V(W1:3)

0V

5V

10V

15V

Gate Charge Characteristic


Evaluation circuit

Simulation Result

VDD=48V,ID=5A ,VGS=10V


Qgs 7.000 nC 7.009 nC 0.129

Qgd 16.000 nC 15.963 nC -0.231

Qg 45.000 nC 35.734 nC -20.591


Capacitance Characteristic

Simulation Result

VDS(V) Cbd(pF)


0.100 360.000 362.000 0.556

0.200 340.000 337.000 -0.882

0.500 285.000 288.000 1.053

1.000 240.000 243.000 1.250

2.000 200.000 198.000 -1.000

5.000 140.000 142.000 1.429

10.000 110.000 110.000 0.000

20.000 80.000 83.000 3.750

50.000 60.000 61.000 1.667

Simulation

Measurement


Open

L1

30nH

V2TD = 2u

TF = 4nPW = 10uPER = 2000u

V1 = 0

TR = 3n

V2 = 10

L2

50nH

Ropen

100MEG

U19

MP4212

R1

50

0

open

0

R2

12

V130Vdc

0

Time

1.95us 2.00us 2.05us 2.10us

V(L1:2) V(L2:2)/3

0V

4V

8V

12V

Switching Time Characteristic


Evaluation circuit

Simulation Result

ID=2.5 A, VDD=30V VGS=0/10V

Measurement Simulation Error(%)

ton 25.000 ns 25.042 ns -0.168

VGS

ID


Vdsense

0VdcR1

100MEG

U19

MP4212

0

Vstep

10Vdc

Open

Open

0

Vv ariable

10Vdc

V_Vvariable

0V 4V 8V 12V 16V 20V

I(Vdsense)

0A

4A

8A

12A

16A

20A

Output Characteristic


Evaluation circuit

VGS=2.5V

4.0V

3.0V

3.5V

8.0V

10.0V

6.0V

4.5V


U19

MP4212

Ropen

100MEG

V1

0Vdc

0

R1

0.01m

Open

0

open

V_V1

0V 0.4V 0.8V 1.2V 1.6V 2.0V 2.4V

I(R1)

100mA

1.0A

10A

BODY DIODE Forward Current Characteristic


Evaluation Circuit



Simulation Result

IDR(A) VSD(V)

Measurement VSD(V)

Simulation %Error

0.100 0.650 0.647 -0.462

0.200 0.680 0.682 0.294

0.500 0.730 0.736 0.822

1.000 0.800 0.789 -1.375

2.000 0.860 0.864 0.465

5.000 1.040 1.041 0.096

10.000 1.300 1.299 -0.077


R1

50

0

V1

TD = 0

TF = 10nsPW = 1usPER = 100us

V1 = -9.4v

TR = 10ns

V2 = 10.6vRopen

100MEG

Open

U19

MP4212

0

Open

Time

0.88us 0.96us 1.04us 1.12us 1.20us 1.28us

I(R1)

-400mA

-300mA

-200mA

-100mA

-0mA

100mA

200mA

300mA

400mA

Reverse Recovery Characteristic Circuit Simulation Result

Evaluation Circuit

Compare Measurement vs. Simulation


trj 22.400 ns 22.266 ns -0.598

trb 40.000 ns 82.273 ns 105.682

trr 62.000 ns 104.539 ns 67.530


Reverse Recovery Characteristic Reference

Trj=22.4(ns) Trb=40.0(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50

Relation between trj and trb

Example


0

V1

0Vdc

open

Ropen

100MEG

Open

R1

0.01m

0

U19

MP4212

V_V1

0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V

I(R1)

0A

1mA

2mA

3mA

4mA

5mA

6mA

7mA

8mA

9mA

10mA

ESD PROTECTION DIODE Zener Voltage Characteristic


Evaluation Circuit


Zener Voltage Characteristic Reference

spice model of mp4212 (standard+bds n&p model) in spice park

Technology

10viv3 v

mv 450mviv3 v

2000u00simulation result

vdc r1

vmeasurementsimulation

ma 0v0

vdc 0vdcvds100meg0

capacitancecbdzerobias