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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes www.cj-elec.com 1 B0530W SCHOTTKY BARRIER DIODE FEATURES Low Forward Voltage Drop Guard Ring Construction for Transient Protection High Conductance Also Available in Lead Free Version SOD-123 MARKING:SE The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device. Maximum Ratings @Ta=25Parameter Symbo Unit Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage V RRM V RWM V R V RMS reverse voltage reverse voltage (DC) V R(RMS) 21 Average rectified output current I o 0.5 Non-repetitive Peak Forward Surge Current @t=8.3ms I FSM 5.5 A Power dissipation P D 500 mW Thermal resistance junction to ambient R θJA /W Junction temperature T j 125 Storage temperature T STG -55~+150 Voltage rate of change dv/dt 1000 V/μs Electrical Characteristics @Ta=25Capacitance between terminals C T pF V R =1,f=1MHz V 30 Value Symbol Test conditions Reverse breakdown voltage V (BR) I R =200uA V Reverse current I R V R =15V I F Forward voltage V F I F V uA =0.5A =0.1A A Min Max Unit 30 V R =30V 20 130 170 Typ 200 0.375 0.430 S E S E E,Apr,2017

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Page 1: SOD-123 Plastic-Encapsulate Diodesjcet.svell.cn/gallery/txUpfile/ed975a9dc7f1b99f69e37f23f029384e.pdf · R=1,f=1MHz pF V 30 Value Symbol Test conditions Reverse breakdown voltage

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOD-123 Plastic-Encapsulate Diodes

www.cj-elec.com 1

B0530W

SCHOTTKY BARRIER DIODE

FEATURES

� Low Forward Voltage Drop

� Guard Ring Construction for Transient Protection

� High Conductance

� Also Available in Lead Free Version

SOD-123

MARKING:SE

The marking bar indicates the cathode Solid dot = Green molding compound device,if none,

the normal device.

Maximum Ratings @Ta=25℃

Parameter Symbo Unit Peak repetitive peak reverse voltage

Working peak reverse voltage

DC blocking voltage

VRRM

VRWM

VR

V

RMS reverse voltage reverse voltage (DC) VR(RMS) 21

Average rectified output current Io 0.5Non-repetitive Peak Forward Surge Current @t=8.3ms

IFSM 5.5 A

Power dissipation PD 500 mW

Thermal resistance junction to ambient RθJA ℃/W

Junction temperature Tj 125 ℃ Storage temperature TSTG -55~+150 ℃ Voltage rate of change dv/dt 1000 V/μs

Electrical Characteristics @Ta=25℃

Capacitance between terminals CT pFVR=1,f=1MHz

V

30

Value

Symbol Test conditions

Reverse breakdown voltage V(BR) IR=200uA V

Reverse current IR VR=15V

IF Forward voltage VF IF V

uA

=0.5A

=0.1A

A

Min Max Unit 30

VR=30V

20

130

170

Typ

200

0.375

0.430

SE SE

E,Apr,2017

Page 2: SOD-123 Plastic-Encapsulate Diodesjcet.svell.cn/gallery/txUpfile/ed975a9dc7f1b99f69e37f23f029384e.pdf · R=1,f=1MHz pF V 30 Value Symbol Test conditions Reverse breakdown voltage

Typical Characteristics B0530W

www.cj-elec.com 2 E,Apr,2017

0.1 1 1010

100

1000

0 25 50 75 100 1250

100

200

300

400

500

600

0.1 0.2 0.3 0.4 0.5 0.60.01

0.1

1

0 5 10 15 20 25 300.1

1

10

100

1000

Ta=25℃

f=1MHz

Capacitance Characteristics

REVERSE VOLTAGE VR (V)

CA

PA

CIT

AN

CE

BE

TW

EE

N T

ER

MIN

ALS

CT

(p

F)

20

Power Derating Curve

PO

WE

R D

ISS

IPA

TIO

N

P

D

(m

W)

AMBIENT TEMPERATURE Ta ( )℃

Forward Characteristics

T a=1

00 o C

T a=2

5 o C

FO

RW

AR

D C

UR

RE

NT

I F

(A

)

FORWARD VOLTAGE VF (V)

Pulsed Pulsed

Reverse Characteristics

Ta=100 oC

Ta=25 oC

RE

VE

RS

E C

UR

RE

NT

I R

(uA

)

REVERSE VOLTAGE VR (V)

Page 3: SOD-123 Plastic-Encapsulate Diodesjcet.svell.cn/gallery/txUpfile/ed975a9dc7f1b99f69e37f23f029384e.pdf · R=1,f=1MHz pF V 30 Value Symbol Test conditions Reverse breakdown voltage

www.cj-elec.com 3

SOD-123 Package Outline Dimensions

SOD-123 Suggested Pad Layout

Min Max Min MaxA 1.050 1.250 0.041 0.049

A1 0.000 0.100 0.000 0.004A2 1.050 1.150 0.041 0.045b 0.450 0.650 0.018 0.026c 0.080 0.150 0.003 0.006D 1.500 1.700 0.059 0.067E 2.600 2.800 0.102 0.110

E1 3.550 3.850 0.140 0.152L

L1 0.250 0.450 0.010 0.018θ 0° 8° 0° 8°

0.500 REF 0.020 REF

SymbolDimensions In Millimeters Dimensions In Inches

E,Apr,2017

Page 4: SOD-123 Plastic-Encapsulate Diodesjcet.svell.cn/gallery/txUpfile/ed975a9dc7f1b99f69e37f23f029384e.pdf · R=1,f=1MHz pF V 30 Value Symbol Test conditions Reverse breakdown voltage

www.cj-elec.com 4 E

SOD-123 Tape and Reel

,Apr,2017