rf power transistor, ldmost plastic family n-channel … · may 2010 doc id 12259 rev 2 1/25 25...

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May 2010 Doc ID 12259 Rev 2 1/25 25 PD55008-E PD55008S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P OUT = 8 W with 17dB gain @ 500 MHz/12.5 V New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. The device’s superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294). Figure 1. Pin connection PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) Gate Source Drain Table 1. Device summary Order code Package Packing PD55008-E PowerSO-10RF (formed lead) Tube PD55008S-E PowerSO-10RF (straight lead) Tube PD55008TR-E PowerSO-10RF (formed lead) Tape and reel PD55008STR-E PowerSO-10RF (straight lead) Tape and reel www.st.com

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Page 1: RF POWER transistor, LdmoST plastic family N-channel … · May 2010 Doc ID 12259 Rev 2 1/25 25 PD55008-E PD55008S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode,

May 2010 Doc ID 12259 Rev 2 1/25

25

PD55008-EPD55008S-E

RF POWER transistor, LdmoST plastic familyN-channel enhancement-mode, lateral MOSFETs

Features■ Excellent thermal stability

■ Common source configuration

■ POUT = 8 W with 17dB gain @ 500 MHz/12.5 V

■ New RF plastic package

DescriptionThe device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz.

The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. The device’s superior linearity performance makes it an ideal solution for car mobile radio.

The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.

Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294).

Figure 1. Pin connection

PowerSO-10RF(formed lead)

PowerSO-10RF(straight lead)

Gate

Source

Drain

Table 1. Device summary

Order code Package Packing

PD55008-E PowerSO-10RF (formed lead) Tube

PD55008S-E PowerSO-10RF (straight lead) Tube

PD55008TR-E PowerSO-10RF (formed lead) Tape and reel

PD55008STR-E PowerSO-10RF (straight lead) Tape and reel

www.st.com

Page 2: RF POWER transistor, LdmoST plastic family N-channel … · May 2010 Doc ID 12259 Rev 2 1/25 25 PD55008-E PD55008S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode,

Contents PD55008-E, PD55008S-E

2/25 Doc ID 12259 Rev 2

Contents

1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.3 Moisture sensitivity level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

4.1 PD55008-E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

4.2 PD54003S-E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

6 Circuit layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

7 Common source s-parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

Page 3: RF POWER transistor, LdmoST plastic family N-channel … · May 2010 Doc ID 12259 Rev 2 1/25 25 PD55008-E PD55008S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode,

PD55008-E, PD55008S-E Electrical data

Doc ID 12259 Rev 2 3/25

1 Electrical data

1.1 Maximum ratings

1.2 Thermal data

Table 2. Absolute maximum ratings (TCASE = 25°C)

Symbol Parameter Value Unit

V(BR)DSS Drain-source voltage 40 V

VGS Gate-source voltage ± 20 V

ID Drain current 4 A

PDISS Power dissipation (@ TC = 70°C) 52.8 W

TJ Max. operating junction temperature 165 °C

TSTG Storage temperature -65 to +150 °C

Table 3. Thermal data

Symbol Parameter Value Unit

RthJC Junction - case thermal resistance 1.8 °C/W

Page 4: RF POWER transistor, LdmoST plastic family N-channel … · May 2010 Doc ID 12259 Rev 2 1/25 25 PD55008-E PD55008S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode,

Electrical characteristics PD55008-E, PD55008S-E

4/25 Doc ID 12259 Rev 2

2 Electrical characteristics

TCASE = +25 oC

2.1 Static

2.2 Dynamic

2.3 Moisture sensitivity level

Table 4. Static

Symbol Test conditions Min. Typ. Max. Unit

IDSS VGS = 0 VDS = 28 V 1 µA

IGSS VGS = 20 V VDS = 0 1 µA

VGS(Q) VDS = 10 V ID = 150 mA 2.0 5.0 V

VDS(ON) VGS = 10 V ID = 1.5 A 0.67 V

gFS VDS = 10 V ID = 1.5 A 1.6 mho

CISS VGS = 0 VDS = 12.5 V f = 1 MHz 58 pF

COSS VGS = 0 VDS = 12.5 V f = 1 MHz 38 pF

CRSS VGS = 0 VDS = 12.5 V f = 1 MHz 2.8 pF

Table 5. Dynamic

Symbol Test conditions Min. Typ. Max. Unit

POUT VDD = 12.5 V, IDQ = 150 mA f = 500 MHz 8 W

GP VDD = 12.5 V, IDQ = 150 mA, POUT = 8 W, f = 500 MHz 15 17 dB

nD VDD = 12.5 V, IDQ = 150 mA, POUT = 8 W, f = 500 MHz 50 55 %

Loadmismatch

VDD = 15.5 V, IDQ = 150 mA, POUT = 8 W, f = 500 MHzAll phase angles

20:1 VSWR

Table 6. Moisture sensitivity level

Test methodology Rating

J-STD-020B MSL 3

Page 5: RF POWER transistor, LdmoST plastic family N-channel … · May 2010 Doc ID 12259 Rev 2 1/25 25 PD55008-E PD55008S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode,

PD55008-E, PD55008S-E Impedance

Doc ID 12259 Rev 2 5/25

3 Impedance

Figure 2. Current conventions

Table 7. Impedance data

PD55008 PD55008S

Freq. (MHz) ZIN (Ω) ZDL(Ω) Freq. (MHz) ZIN (Ω) ZDL(Ω)

480 1.141 - j 2.054 1.649 + j 2.916 480 1.075 - j 2.727 2.046 + j 1.960

500 1.589 - j 1.185 1.561 + j 2.639 500 1.409 - j 3.448 2.129 + j 3.219

520 1.649 - j 1.965 1.716 + j 1.552 520 1.586 - j 2.087 3.082 + j 2.043

800 1.05 + j 0.54 2.62 - j 1.91

850 1.50 + j 1.00 2.26 - j 1.54

900 1.95 + j 2.28 2.70 - j 1.90

Page 6: RF POWER transistor, LdmoST plastic family N-channel … · May 2010 Doc ID 12259 Rev 2 1/25 25 PD55008-E PD55008S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode,

Typical performance PD55008-E, PD55008S-E

6/25 Doc ID 12259 Rev 2

4 Typical performance

Figure 3. Capacitance vs. drain voltage Figure 4. Drain current vs. gate-source voltage

Figure 5. Gate-source voltage vs. case temperature

0 5 10 15 20 25VDD, DRAIN VOLTAGE (V)

1

10

100

1000

C, C

AP

AC

ITA

NC

ES

(pF)

Ciss

Coss

Crss

f=1 MHz

1 2 3 4 5 6

VGS, GATE-SOURCE VOLTAGE (V )

0

1

2

3

4

Id, D

RA

IN C

UR

RE

NT

(A)

Vds = 10 V

-25 0 25 50 75 100Tc, CASE TEMPERATURE (°C)

0.92

0.94

0.96

0.98

1

1.02

1.04

1.06

VGS,

GAT

E-SO

UR

CE

VOLT

AGE(

NO

RM

ALIZ

ED)

ID = .25AID = .5A

ID = 1A

ID = 2A

ID = 1.5A

VDS = 10 V

Page 7: RF POWER transistor, LdmoST plastic family N-channel … · May 2010 Doc ID 12259 Rev 2 1/25 25 PD55008-E PD55008S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode,

PD55008-E, PD55008S-E Typical performance

Doc ID 12259 Rev 2 7/25

4.1 PD55008-E

Figure 6. Output power vs. input power Figure 7. Power gain vs. output power

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9Pin, INPUT POWER (W)

0

2

4

6

8

10

12

14

Pout

, OU

TPU

T PO

WER

(W)

VDD = 12.5 VIDQ = 150 mA

480 MHz

500 MHz

520 MHz

0 2 4 6 8 10 12Pout, OUTPUT POWER (W)

6

8

10

12

14

16

18

20

22

Pg,

PO

WE

R G

AIN

(dB

)

VDD = 12.5 VIDQ = 150 mA

480 MHz

500 MHz520 MHz

Figure 8. Drain efficiency vs. output power Figure 9. Input return loss vs. output power

0 2 4 6 8 10 12Pout, OUTPUT POWER (W)

0

10

20

30

40

50

60

70

80

Nd,

DR

AIN

EFF

ICIE

NC

Y (%

)

VDD = 12.5 VIDQ = 150 mA

480 MHz

500 MHz

520 MHz

0 2 4 6 8 10 12Pout, OUTPUT POWER (W)

-40

-30

-20

-10

0

Rtl,

INP

UT

RE

TUR

N L

OS

S (d

B)

VDD = 12.5 VIDQ = 150 mA

480 MHz

500 MHz

520 MHz

Figure 10. Output power vs. bias current Figure 11. Drain efficiency vs. bias current

0 100 200 300 400 500 600 700 800IDQ, BIAS CURRENT (mA)

0

2

4

6

8

10

12

Pout

, OU

TPU

T PO

WER

(W)

VDD = 12.5 VPin= 21.7 dBm

480 MHz

500 MHz520 MHz

0 100 200 300 400 500 600 700 800IDQ, BIAS CURRENT (mA)

10

20

30

40

50

60

70

Nd,

DR

AIN

EFF

ICIE

NC

Y (%

)

VDD = 12.5 VPin= 21.7 dBm

480 MHz

500 MHz

520 MHz

Page 8: RF POWER transistor, LdmoST plastic family N-channel … · May 2010 Doc ID 12259 Rev 2 1/25 25 PD55008-E PD55008S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode,

Typical performance PD55008-E, PD55008S-E

8/25 Doc ID 12259 Rev 2

Figure 12. Output power vs. supply voltage Figure 13. Drain efficiency vs. supply voltage

9 10 11 12 13 14 15VDD, SUPPLY VOLTAGE (V)

34

56

789

1011

1213

Pou

t, O

UTP

UT

PO

WE

R (W

)

Idq= 150 mAPin= 21.7 dBm

480 MHz

500 MHz

520 MHz

9 10 11 12 13 14 15VDD, SUPPLY VOLTAGE (V)

20

30

40

50

60

70

Nd,

DR

AIN

EFF

ICIE

NC

Y (%

)

Idq= 150 mAPin= 21.7 dBm

480 MHz

500 MHz

520 MHz

Figure 14. Output power vs. gate-source voltage

Table 8. Output power vs. input power

0 1 2 3 4VGS, GATE-SOURCE VOLTAGE (V)

0

2

4

6

8

10

12

Pou

t, O

UTP

UT

PO

WE

R (W

)

VDD = 12.5 VPin= 21.7 dBm

480 MHz

500 MHz

520 MHz

0 0.1 0.2 0.3 0.4 0.5 0.6Input Power (W)

0

2

4

6

8

10

Out

put P

ower

(W)

900 MHz

850 MHz

800 MHz

Vdd = 12.5VIdq = 250mA

Figure 15. Drain efficiecy vs. output power Figure 16. Input return loss vs. output power

1 2 3 4 5 6 7 8 9

Output Power (W)

10

20

30

40

50

60

Dra

in e

ffici

ency

(%)

900 MHz

850 MHz

800 MHz

Vdd = 12.5VIdq = 250mA

0 1 2 3 4 5 6 7 8 9Output Power (W)

-30

-25

-20

-15

-10

-5

0

Inpu

t Ret

urn

Loss

(dB

)

800 MHz

900 MHz

850 MHz

Vdd = 12.5VIdq = 250mA

Page 9: RF POWER transistor, LdmoST plastic family N-channel … · May 2010 Doc ID 12259 Rev 2 1/25 25 PD55008-E PD55008S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode,

PD55008-E, PD55008S-E Typical performance

Doc ID 12259 Rev 2 9/25

4.2 PD54003S-E

Figure 17. Output power vs. input power Figure 18. Power gain vs. output power

0 0.1 0.2 0.3 0.4 0.5Pin, INPUT POWER (W)

0

2

4

6

8

10

12

14

Pou

t, O

UTP

UT

PO

WE

R (W

)

VDD = 12.5 VIDQ = 150 mA

480 MHz500 MHz

520 MHz

0 2 4 6 8 10 12Pout, OUTPUT POWER (W)

6

8

10

12

14

16

18

20

22

Pg,

PO

WE

R G

AIN

(dB

)

VDD = 12.5 VIDQ = 150 mA

480 MHz

500 MHz

520 MHz

Figure 19. Drain efficiency vs. output power Figure 20. Input return loss vs. output power

0 2 4 6 8 10 12Pout, OUTPUT POWER (W)

0

10

20

30

40

50

60

70

80

Nd,

DR

AIN

EFF

ICIE

NC

Y (%

)

VDD = 12.5 VIDQ = 150 mA

480 MHz

500 MHz

520 MHz

0 2 4 6 8 10 12Pout, OUTPUT POWER (W)

-40

-30

-20

-10

0

Rtl,

INP

UT

RE

TUR

N L

OS

S (d

B)

VDD = 12.5 VIDQ = 150 mA

480 MHz

500 MHz520 MHz

Figure 21. Output power vs. bias current Figure 22. Drain efficiency vs. bias current

0 100 200 300 400 500 600 700 800IDQ, BIAS CURRENT (mA)

0

2

4

6

8

10

12

Pou

t, O

UTP

UT

PO

WE

R (W

)

480 MHz

500 MHz520 MHz

VDD = 12.5 VPin= 21 dBm

0 100 200 300 400 500 600 700 800IDQ, BIAS CURRENT (mA)

10

20

30

40

50

60

70

Nd,

DR

AIN

EFF

ICIE

NC

Y (%

)

480 MHz

500 MHz

520 MHz

VDD = 12.5 VPin= 21 dBm

Page 10: RF POWER transistor, LdmoST plastic family N-channel … · May 2010 Doc ID 12259 Rev 2 1/25 25 PD55008-E PD55008S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode,

Typical performance PD55008-E, PD55008S-E

10/25 Doc ID 12259 Rev 2

Figure 23. Output power vs. supply voltage Figure 24. Drain efficiency vs. supply voltage

9 10 11 12 13 14 15VDD, SUPPLY VOLTAGE (V)

3

4

5

6

7

8

9

10

11

12

13

Pou

t, O

UTP

UT

PO

WE

R (W

)

480 MHz

500 MHz 520 MHz

Idq= 150 mAPin= 21 dBm

520 MHz

9 10 11 12 13 14 15VDD, SUPPLY VOLTAGE (V)

20

30

40

50

60

70

Nd,

DR

AIN

EFF

ICIE

NC

Y (%

)

480 MHz

500 MHz

520 MHz

Idq= 150 mAPin= 21 dBm

Figure 25. Output power vs. supply voltage

0 1 2 3 4VGS, GATE-SOURCE VOLTAGE (V)

0

2

4

6

8

10

12

Pou

t, O

UTP

UT

PO

WE

R (W

)

480 MHz 500 MHz

520 MHzVDD = 12.5 VPin= 21 dBm

Page 11: RF POWER transistor, LdmoST plastic family N-channel … · May 2010 Doc ID 12259 Rev 2 1/25 25 PD55008-E PD55008S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode,

PD55008-E, PD55008S-E Test circuit

Doc ID 12259 Rev 2 11/25

5 Test circuit

Figure 26. Test circuit schematic

Table 9. Test circuit component part list

Component Description

B1, B2 Short ferrite bead, fair rite products (2743021446)

C1, C12 240 pF, 100 mil chip capacitor

C2,C3,C10,C11 0 TO 20 pF, trimmer capacitor

C4 82 pF, 100 mil chip capacitor

C5,C16 120 pF, 100 mil chip capacitor

C6,C13 10 µF, 50 V electrolytic capacitor

C7, C14 1.200 pF, 100 mil chip capacitor

C8,C15 0.1 F, 100 mil chip capacitor

C9 30 pF, 100 mil chip capacitor

L1 55.5 nH, turn, Coilcraft

N1, N2 Type N flange mount

R1 15 Ω, 0805 chip resistor

R2 51 Ω, 1/2 W resistor

R3 10 Ω, 0805 chip resistor

R4 33 kΩ, 1/8 Ω resistor

Z1 0.451” X 0.080” microstrip

Z2 1.005” X 0.080” microstrip

Z3 0.020” X 0.080” microstrip

Z4 0.155” X 0.080” microstrip

Z5,Z6 0.260” X 0.233” microstrip

Z7 0.065” X 0.080” microstrip

Page 12: RF POWER transistor, LdmoST plastic family N-channel … · May 2010 Doc ID 12259 Rev 2 1/25 25 PD55008-E PD55008S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode,

Test circuit PD55008-E, PD55008S-E

12/25 Doc ID 12259 Rev 2

Z8 0.266” X 0.080” microstrip

Z9 1.113” X 0.080” microstrip

Z10 0.433” X 0.080” microstrip

Board Roger ultra lam 2000 THK 0.030” εr = 2.55 2oz ED Cu both sides

Table 9. Test circuit component part list (continued)

Component Description

Page 13: RF POWER transistor, LdmoST plastic family N-channel … · May 2010 Doc ID 12259 Rev 2 1/25 25 PD55008-E PD55008S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode,

PD55008-E, PD55008S-E Circuit layout

Doc ID 12259 Rev 2 13/25

6 Circuit layout

Figure 27. Test fixture component layout

Figure 28. Test circuit photomaster

Page 14: RF POWER transistor, LdmoST plastic family N-channel … · May 2010 Doc ID 12259 Rev 2 1/25 25 PD55008-E PD55008S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode,

Common source s-parameter PD55008-E, PD55008S-E

14/25 Doc ID 12259 Rev 2

7 Common source s-parameter

Table 10. S-parameter for PD55008-E (VDS = 12.5 V, IDS = 150 mA)

Freq (MHz)

IS11I S11< Φ IS21I S21< Φ IS12I S12< Φ IS22I S22< Φ

50 0.781 -141 16.89 93 0.035 4 0.685 -137

100 0.784 -157 8.14 77 0.035 -11 0.681 -151

150 0.803 -162 5.19 67 0.032 -18 0.704 -157

200 0.830 -165 3.69 58 0.030 -26 0.743 -159

250 0.852 -167 2.77 50 0.027 -34 0.773 -161

300 0.873 -169 2.16 44 0.025 -39 0.812 -164

350 0.892 -171 1.72 37 0.022 -43 0.844 -166

400 0.906 -172 1.40 33 0.020 -45 0.862 -168

450 0.919 -173 1.16 28 0.017 -47 0.888 -170

500 0.928 -175 0.97 24 0.015 -51 0.903 -171

550 0.936 -176 0.83 20 0.012 -52 0.913 -173

600 0.941 -177 0.71 17 0.010 -50 0.921 -174

650 0.946 -178 0.62 14 0.010 -52 0.926 -176

700 0.952 -179 0.55 11 0.008 -47 0.934 -177

750 0.954 180 0.48 9 0.006 -48 0.937 -178

800 0.957 179 0.44 7 0.006 -40 0.940 -180

850 0.959 178 0.39 4 0.004 -30 0.950 179

900 0.960 177 0.35 3 0.005 -1 0.952 178

950 0.963 176 0.32 1 0.004 17 0.957 177

1000 0.964 176 0.29 -1 0.004 28 0.958 176

1050 0.964 175 0.27 -3 0.004 43 0.953 175

1100 0.966 174 0.25 -4 0.005 42 0.955 174

1150 0.963 173 0.23 -6 0.005 59 0.954 173

1200 0.964 174 0.21 -8 0.007 58 0.952 172

1250 0.962 172 0.20 -9 0.008 57 0.956 171

1300 0.961 172 0.18 -11 0.008 57 0.953 171

1350 0.960 171 0.17 -11 0.010 68 0.950 170

1400 0.957 170 0.16 -12 0.010 61 0.957 169

1450 0.957 169 0.15 -12 0.011 67 0.942 168

1500 0.952 169 0.14 -13 0.011 76 0.944 167

Page 15: RF POWER transistor, LdmoST plastic family N-channel … · May 2010 Doc ID 12259 Rev 2 1/25 25 PD55008-E PD55008S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode,

PD55008-E, PD55008S-E Common source s-parameter

Doc ID 12259 Rev 2 15/25

Table 11. S-parameter PD55003-E (VDS = 12.5 V, IDS = 800 mA)

Freq (MHz)

IS11I S11< Φ IS21I S21< Φ IS12I S12< Φ IS22I S22< Φ

50 0.832 -156 20.68 90 0.022 3 0.740 -157

100 0.833 -167 9.98 80 0.022 -6 0.734 -165

150 0.839 -171 6.51 73 0.020 -11 0.741 -169

200 0.851 -172 4.78 67 0.020 -16 0.756 -169

250 0.851 -174 3.71 60 0.018 -20 0.767 -170

300 0.861 -174 3.00 55 0.017 -22 0.791 -172

350 0.872 -175 2.46 49 0.016 -23 0.813 -172

400 0.883 -176 2.06 44 0.014 -26 0.828 -173

450 0.894 -177 1.75 40 0.014 -26 0.849 -174

500 0.902 -178 1.50 35 0.012 -26 0.863 -175

550 0.910 -179 1.30 31 0.011 -27 0.874 -176

600 0.919 -179 1.14 28 0.010 -29 0.886 -177

650 0.923 180 1.01 25 0.009 -25 0.890 -178

700 0.929 179 0.90 22 0.008 -20 0.898 -179

750 0.934 178 0.81 19 0.007 -10 0.905 -180

800 0.937 177 0.73 16 0.006 -3 0.908 179

850 0.939 177 0.66 13 0.005 11 0.925 178

900 0.942 176 0.60 11 0.005 17 0.926 177

950 0.944 175 0.55 9 0.006 20 0.929 176

1000 0.949 175 0.51 6 0.006 25 0.935 176

1050 0.952 174 0.47 4 0.008 35 0.933 174

1100 0.954 173 0.43 2 0.007 38 0.935 173

1150 0.952 173 0.40 0 0.009 48 0.936 173

1200 0.954 172 0.37 -2 0.009 50 0.936 172

1250 0.951 171 0.34 -4 0.010 53 0.937 171

1300 0.950 171 0.32 -5 0.011 51 0.935 170

1350 0.951 170 0.30 -6 0.011 60 0.935 169

1400 0.948 170 0.28 -8 0.012 56 0.939 169

1450 0.947 169 0.27 -9 0.012 64 0.928 168

1500 0.944 168 0.25 -9 0.013 67 0.933 166

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Common source s-parameter PD55008-E, PD55008S-E

16/25 Doc ID 12259 Rev 2

Table 12. S-parameter for PD55003-E (VDS = 12.5 V, IDS = 1.5 A)

Freq (MHz)

IS11I S11< Φ IS21I S21< Φ IS12I S12< Φ IS22I S22< Φ

50 0.797 -161 20.72 90 0.020 2 0.743 -159

100 0.824 -168 10.01 80 0.019 -5 0.741 -167

150 0.849 -171 6.54 74 0.019 -9 0.746 -170

200 0.861 -173 4.83 67 0.018 -14 0.759 -171

250 0.870 -175 3.76 61 0.017 -19 0.770 -171

300 0.879 -175 3.04 56 0.016 -20 0.791 -173

350 0.887 -176 2.51 50 0.015 -21 0.811 -173

400 0.897 -177 2.11 45 0.013 -26 0.824 -174

450 0.905 -178 1.80 41 0.013 -23 0.847 -175

500 0.911 -178 1.54 37 0.011 -21 0.858 -175

550 0.917 -179 1.35 33 0.010 -23 0.871 -176

600 0.924 -180 1.17 29 0.009 -21 0.881 -177

650 0.927 179 1.04 26 0.009 -16 0.887 -178

700 0.933 179 0.93 23 0.007 -8 0.899 -179

750 0.937 178 0.83 20 0.007 -3 0.901 180

800 0.940 177 0.76 17 0.006 -2 0.906 179

850 0.941 177 0.68 14 0.007 0 0.918 178

900 0.944 176 0.63 12 0.006 21 0.920 177

950 0.946 175 0.58 10 0.008 17 0.927 176

1000 0.948 174 0.53 7 0.007 43 0.929 175

1050 0.952 174 0.49 5 0.008 44 0.929 175

1100 0.953 173 0.45 3 0.008 44 0.930 173

1150 0.952 172 0.42 1 0.009 47 0.931 173

1200 0.951 172 0.39 -1 0.010 51 0.928 172

1250 0.952 171 0.36 -3 0.010 51 0.932 171

1300 0.952 171 0.34 -5 0.011 52 0.931 170

1350 0.949 170 0.31 -7 0.011 53 0.931 169

1400 0.947 169 0.29 8 0.011 58 0.937 169

1450 0.945 169 0.28 -9 0.012 60 0.926 168

1500 0.942 168 0.26 -9 0.012 64 0.927 166

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PD55008-E, PD55008S-E Common source s-parameter

Doc ID 12259 Rev 2 17/25

Table 13. S-parameter for PD55003S-E (VDS = 12.5 V, IDS = 0.15 A)

Freq (MHz)

IS11I S11< Φ IS21I S21< Φ IS12I S12< Φ IS22I S22< Φ

50 0.753 -146 15.56 92 0.036 4 0.666 -144

100 0.781 -159 7.52 78 0.036 -9 0.684 -157

150 0.812 -163 4.83 70 0.033 -17 0.717 -161

200 0.834 -166 3.46 62 0.032 -25 0.747 -162

250 0.856 -168 2.63 54 0.029 -31 0.784 -164

300 0.873 -169 2.07 48 0.028 -37 0.814 -165

350 0.887 -170 1.66 42 0.025 -42 0.836 -166

400 0.902 -172 1.37 37 0.023 -45 0.859 -168

450 0.915 -173 1.14 33 0.021 -48 0.873 -169

500 0.925 -174 0.96 29 0.019 -52 0.890 -171

550 0.935 -175 0.83 25 0.017 -56 0.906 -171

600 0.942 -176 0.71 22 0.015 -55 0.911 -173

650 0.946 -176 0.63 19 0.014 -56 0.922 -174

700 0.950 -177 0.55 16 0.013 -60 0.933 -175

750 0.956 -178 0.49 14 0.012 -58 0.936 -176

800 0.959 -179 0.44 12 0.010 -67 0.942 -177

850 0.964 -180 0.40 9 0.008 -66 0.942 -178

900 0.961 180 0.36 7 0.008 -65 0.947 -179

950 0.965 179 0.33 5 0.005 -62 0.954 -179

1000 0.967 178 0.30 3 0.006 -67 0.957 180

1050 0.970 178 0.27 2 0.004 -66 0.960 179

1100 0.970 177 0.25 0 0.004 -43 0.958 178

1150 0.970 177 0.23 -2 0.003 -42 0.963 178

1200 0.971 176 0.22 -3 0.002 -58 0.961 177

1250 0.973 175 0.20 -5 0.001 -13 0.960 177

1300 0.969 175 0.19 -6 0.001 31 0.956 176

1350 0.971 174 0.18 -7 0.002 60 0.959 175

1400 0.969 174 0.16 -7 0.001 67 0.957 175

1450 0.969 173 0.15 -8 0.003 79 0.965 174

1500 0.968 173 0.14 -9 0.004 125 0.965 174

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Common source s-parameter PD55008-E, PD55008S-E

18/25 Doc ID 12259 Rev 2

Table 14. S-parameter for PD55003S-E (VDS = 12.5 V, IDS = 0.8 A)

Freq (MHz)

IS11I S11< Φ IS21I S21< Φ IS12I S12< Φ IS22I S22< Φ

50 0.862 -157 18.51 90 0.021 7 0.765 -161

100 0.861 -168 8.97 81 0.021 -4 0.767 -170

150 0.869 -171 5.88 76 0.020 -10 0.778 -172

200 0.872 -173 4.33 70 0.019 -14 0.782 -172

250 0.879 -174 3.40 65 0.019 -18 0.801 -173

300 0.888 -175 2.77 60 0.018 -20 0.810 -173

350 0.894 -175 2.30 55 0.017 -26 0.823 -173

400 0.905 -176 1.96 50 0.016 -31 0.836 -173

450 0.910 -177 1.67 46 0.015 -33 0.846 -174

500 0.916 -177 1.44 42 0.014 -31 0.862 -175

550 0.926 -178 1.27 38 0.013 -32 0.873 -175

600 0.930 -178 1.11 35 0.012 -37 0.880 -176

650 0.934 -179 0.96 32 0.011 -39 0.892 -176

700 0.938 -179 0.89 29 0.010 -38 0.901 -177

750 0.944 180 0.80 26 0.009 -38 0.907 -178

800 0.947 179 0.73 24 0.008 -38 0.913 -178

850 0.951 179 0.66 21 0.007 -36 0.914 -179

900 0.952 178 0.60 18 0.005 -44 0.920 180

950 0.953 178 0.55 16 0.005 -36 0.929 179

1000 0.955 177 0.51 14 0.005 -22 0.932 179

1050 0.957 176 0.48 11 0.004 -19 0.937 178

1100 0.960 176 0.44 9 0.003 -3 0.937 178

1150 0.961 176 0.41 7 0.004 2 0.943 177

1200 0.962 175 0.38 5 0.004 -4 0.940 177

1250 0.964 175 0.35 4 0.002 1 0.939 176

1300 0.961 174 0.33 2 0.003 31 0.937 176

1350 0.961 174 0.31 1 0.004 47 0.940 175

1400 0.959 173 0.29 1 0.003 56 0.939 174

1450 0.961 173 0.27 -1 0.004 59 0.945 173

1500 0.962 172 0.26 -2 0.004 87 0.946 173

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PD55008-E, PD55008S-E Common source s-parameter

Doc ID 12259 Rev 2 19/25

Table 15. S-parameter for PD55008S-E (VDS = 12.5 V, IDS = 1.5 A)

Freq (MHz)

IS11I S11< Φ IS21I S21< Φ IS12I S12< Φ IS22I S22< Φ

50 0.821 -162 18.74 90 0.002 2 0.771 -163

100 0.849 -169 9.09 82 0.019 -5 0.776 -171

150 0.875 -171 5.97 77 0.018 -10 0.785 -173

200 0.885 -173 4.41 71 0.017 -12 0.789 -173

250 0.892 -175 3.47 66 0.017 17 0.807 -174

300 0.895 -175 2.84 61 0.016 -19 0.915 -174

350 0.901 -176 2.37 56 0.015 -22 0.924 -174

400 0.909 -177 2.02 52 0.014 -26 0.839 -174

450 0.914 -177 1.74 48 0.013 -28 0.844 -175

500 0.920 -178 1.50 43 0.013 -30 0.859 -176

550 0.928 -178 1.32 40 0.012 -28 0.871 -176

600 0.932 -179 1.17 37 0.011 -34 0.877 -176

650 0.935 -179 1.04 33 0.010 -31 0.887 -177

700 0.939 -180 0.93 30 0.009 -29 0.895 -177

750 0.946 179 0.84 28 0.008 -28 0.901 -178

800 0.946 179 0.77 25 0.008 -31 0.908 -179

850 0.953 178 0.70 22 0.007 -31 0.908 -179

900 0.952 178 0.64 19 0.006 -27 0.916 180

950 0.950 177 0.59 18 0.006 -33 0.924 179

1000 0.954 177 0.55 15 0.005 -21 0.928 178

1050 0.957 176 0.50 3 0.005 -20 0.930 178

1100 0.959 176 0.47 11 0.004 4 0.933 178

1150 0.959 175 0.44 8 0.004 13 0.937 177

1200 0.961 175 0.41 7 0.004 30 0.937 177

1250 0.962 174 0.38 5 0.003 29 0.935 176

1300 0.961 174 0.35 3 0.004 35 0.935 175

1350 0.961 174 0.33 2 0.004 55 0.935 174

1400 0.959 173 0.31 1 0.005 62 0.934 174

1450 0.960 172 0.29 0 0.005 65 0.942 173

1500 0.960 172 0.27 -1 0.005 81 0.942 173

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Package mechanical data PD55008-E, PD55008S-E

20/25 Doc ID 12259 Rev 2

8 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

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PD55008-E, PD55008S-E Package mechanical data

Doc ID 12259 Rev 2 21/25

Note: Resin protrusions not included (max value: 0.15 mm per side)

Figure 29. Package dimensions

Table 16. PowerSO-10RF formed lead (Gull Wing) mechanical data

Dim. mm. Inch

Min. Typ. Max. Min. Typ. Max.

A1 0 0.05 0.1 0. 0.0019 0.0038

A2 3.4 3.5 3.6 0.134 0.137 0.142

A3 1.2 1.3 1.4 0.046 0.05 0.054

A4 0.15 0.2 0.25 0.005 0.007 0.009

a 0.2 0.007

b 5.4 5.53 5.65 0.212 0.217 0.221

c 0.23 0.27 0.32 0.008 0.01 0.012

D 9.4 9.5 9.6 0.370 0.374 0.377

D1 7.4 7.5 7.6 0.290 0.295 0.298

E 13.85 14.1 14.35 0.544 0.555 0.565

E1 9.3 9.4 9.5 0.365 0.37 0.375

E2 7.3 7.4 7.5 0.286 0.292 0.294

E3 5.9 6.1 6.3 0.231 0.24 0.247

F 0.5 0.019

G 1.2 0.047

L 0.8 1 1.1 0.030 0.039 0.042

R1 0.25 0.01

R2 0.8 0.031

T 2 deg 5 deg 8 deg 2 deg 5 deg 8 deg

T1 6 deg 6 deg

T2 10 deg 10 deg

CRITICAL DIMENSIONS:- Overall width (L)

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Package mechanical data PD55008-E, PD55008S-E

22/25 Doc ID 12259 Rev 2

Figure 30. Tube information

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PD55008-E, PD55008S-E Package mechanical data

Doc ID 12259 Rev 2 23/25

Figure 31. Reel information

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Revision history PD55008-E, PD55008S-E

24/25 Doc ID 12259 Rev 2

9 Revision history

Table 17. Document revision history

Date Revision Changes

07-Apr-2006 1 Initial release.

20-May-2010 2 Added: Table 6: Moisture sensitivity level.

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PD55008-E, PD55008S-E

Doc ID 12259 Rev 2 25/25

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