requirements for a successful 450mm transition - … for a . successful 450mm transition. december....

Requirements for a Successful 450mm Transition December 5, 2013

Akihisa Sekiguchi, Ph.D. VP & Deputy GM Tokyo Electron Limited

1 Akihisa Sekiguchi / Tokyo Electron/ December 5th, 2013

Outline

• Technology Development Requirements between now and the 450mm Era

• Recap of discussions to date

• TEL’s 450mm Development Status

• Summary

TEL is a trademark of Tokyo Electron Limited.


Why do we scale? • Benefit

– Higher density – Higher computational power or larger data storage – Lower energy consumption – Lower COST

• Issues – Patterning: Optical limit, multiple patterning, EUV, DSA,…

– Device: Short Channel Effect, variability, mobility, RC delay,…

– Economics: benefits of scaling have been decreasing.

Scaling has become progressively more difficult


Mor

e M

oore

Functional Diversification C

MO

S Sc

alin

g

New Material New Structure

Advanced Packaging (3DI / WLP)

3DI

Strained Si

High-k Metal Gate

Cu/ULK

FinFET

Lithography

ArF

ArF-Immersion

NIL, EBDW

More than Moore

Source :TEL based on ITRS

DP/MP

Now 2017~

SiGe / III-V

Flip-Chip 2.5D

Wire-Bonding

DRAM

NAND

STT-MRAM

3D NAND ReRAM

Emerging Memory

Ion Memory ZRAM…

450mm

DSA

Technical Challenges

EUV

Carbon Tr. /CNT

Difficult technical requirements on multiple fronts

Si Photonics


Initial LWR Treatment / Smoothing Post-etch

Experiments stack

Etch stop on Si

Line 25nm / Pitch 64nm Line 30nm / Pitch 70nm

Proc

ess-

A Pr

oces

s-B

Pr

oces

s-C

Pr

oces

s-D

CD:29.8nm LWR:4.29nm

(13.2%)


(14.5%)


(15.9%)


(16.3%)


(10.3%)


(12.9%)


(15.6%)


(16.4%)

*Images are X300k Y52.7 rectangular magnification *LWR is averaged 120 sets of data

EUV Lithography and Etching

Courtesy of SEMATECH

EUV is capable but HVM is still a couple of years ahead

Etch stop on Si Si

SiON 5nm SiN 50nm

OPL 100nm

SiARC 35nm

Resist 50-60nm

Si


Mor

e M

oore

Functional Diversification C

MO

S Sc

alin

g

New Material New Structure

Advanced Packaging (3DI / WLP)

3DI

Strained Si

High-k Metal Gate

Cu/ULK

FinFET

Lithography

ArF

ArF-Immersion

NIL, EBDW

More than Moore

Source :TEL based on ITRS

DP/MP

Now 2017~

SiGe / III-V

Flip-Chip 2.5D

Wire-Bonding

DRAM

NAND

STT-MRAM

3D NAND ReRAM

Emerging Memory

Ion Memory ZRAM…

450mm

DSA

Technical Challenges

EUV

Carbon Tr. /CNT

Difficult technical requirements on multiple fronts

Si Photonics


Evolving Material and Device Structure

source: Intel ITPC

Future structures and materials yet to be determined


Transistor with New Structures

Evolving structure complexities demand new processes

Planar MOSFET

Nanowire

FinFET


Process Key Points in FinFET

http://newsroom.intel.com/docs/DOC-2032

Fin

Gate

• Low damage fin etching • Fin height control • Impurity doping • Side wall etching

Fin

Gate

STI

Today`s FinFET process needs to be gentle & precise


Reason: SCE Device Challenges

• FD-SOI

C. Fenouillet-Beranger et al., VLSI tech., 2012, pp. 115-116.

• FinFET • Nano-wire FET

C. Auth et al., VLSI tech., 2012, pp. 131-132.

J. Chen et al., VLSI tech., 2010, pp. 175-176.

Device challenges drive structure complexities


Reason for material change: Mobility

• Higher Performance via Mobility Enhancement • Stress effects, material changes are effective

T. Ghani, et al., IEDM2003, pp 978-980.

SiGe S/D Ge, III-V Channels

M. Radosavljevic, et al., IEDM2011, pp. 765-768.

Stress Liner

III-V materials are difficult to integrate


• Our development environment is extremely challenging

• Recap of discussions to date at Semicon

• TEL’s 450mm Development Status

• Summary

TEL is a trademark of Tokyo Electron Limited.


What have we discussed so far?

450mm Motivation

Successful Transition

Current Status

• Economic benefit of scaling has been decreasing • 450mm is the cost project for device maker

• Alignment, Collaboration and Cost sharing are key • Consortia such as G450C leads 450mm early

development

• Issues still remain regarding transition timing • We must remember past lessons & learn from our

mistakes

450mm motivation is simple, but no clear “exit strategy”


450mm Motivation

Ref. Nikon, 2013

450mm is a cost project (with Big Development)

Ref. TEL, 2012


Key for Successful Transition

Ref. Nikon, 2013

Ref. Tokyo Electron, 2012

Ref. Applied Materials, 2012

Successful transition dependent on collaboration


Learned from our experience

• Scaling will continue for 300 mm during this decade • Process technology will be transferred from 300mm to 450mm

Priority is 300mm

• Alignment on timing is key among tool suppliers and device makers

• 450mm patterned wafers is necessary for next phase

Alignment on timing is critical

• Concurrent 300 mm and 450 mm development is expensive • ROI needs to be managed

Strategic R&D Management

Balanced resource allocation and management is critical


450mm Project Phases

Phase1 [Done]

• Research: TEL can achieve critical parameters for 450mm assuming today`s state-of-art

Phase2 [Now]

• Development: on-going 450mm related development and learning needs to be utilized in 300mm

Phase3 [Future]

• Manufacturing: 450mm HVM timing and technology node needs to be aligned within the industry

Technology & Timing alignment is necessary for Phase 3


Porting learning from 450 to 300mm

450mm activities needs to be utilized for 300mm

300mm

450mm Small Footprint

High Throughput Energy Saving Activity

Process Control Big Data Management

Maximizing shared components


Fab Ops: Sustainable Value Cycle

Resource-Saving Recipe

Peak Shift

Parts/Unit Management

Host

Lot/Wafer Dispatch

Resource Visualization

Recipe library

SEMI EESM SEMI S23

Tool suppliers will increasingly contribute to optimize operation

Data Mining


Equipment level: Chiller Energy Saving

Hose：15m

Chiller

Chiller

Sub Fab Area

Mezzanine

Hose：5m

Energy consumption can be reduced by about 20%


TEL 450mm Operations

Oshu

Sapporo

Yamanashi

Taiwa

Sendai

Akasaka (Head Office)

Koshi

Thermal Processing

Etch

Sales & Service R&D/Manufacturing/Engineering

450mm Platform Cleaning

Coater/Developer

TEL 450mm development moves to the next phase

Wafer Prober CVD


Open Platform Alliance Concept

Open Platform Alliance

Open Platform can benefit the supply chain

Parts Suppliers

Tool Suppliers

Device Makers

-Minimize part number -Increase productivity

-Develop tool with universal controller -Achieve asset light development

-Risk control by minimized parts & platform -Procurement, Maintenance, etc…

Semicon Japan 2012


Summary • There are many issues & challenges to

overcome before 450mm, however • Most of the technology elements have yet to be

established…making 450mm a moving target • The good news is today`s technical

requirements are achievable on a larger wafer for our product set

• For a successful transition, fixing the target node and timing among customers is the key

• Once the target is fixed, we can deliver 450mm solution…at the right cost of course…


Thank you for listening

requirements for a successful 450mm transition - … for a . successful 450mm transition. december....

Documents