r8005anx : transistors · 2021. 3. 20. · d = 2.5a symbol values 17 vgs = 10v - 4.4 - min. 21 -...
TRANSCRIPT
Datasheet
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R8005ANX Nch 800V 5A Power MOSFET
4) Drive circuits can be simple.
2) Fast switching speed.
Tape width (mm) -
3) Gate-source voltage (VGSS) guaranteed to be 30V.
Application
Reel size (mm)
6) Pb-free lead plating ; RoHS compliant
Bulk
-
Type
Packaging
500
Taping code
800V
2.08
51W
5A
5) Parallel use is easy.
VDSS
RDS(on) (Max.)
IDPD
1) Low on-resistance.
Outline
Inner circuit
Packaging specifications
TO-220FM
VGSS
20
Continuous drain current
Basic ordering unit (pcs)
Pulsed drain current
Gate - Source voltage
Parameter
Tc = 100°C
Switching Power Supply
5
Value
Tc = 25°C
Symbol
Absolute maximum ratings(Ta = 25°C)
Drain - Source voltage
-
Marking R8005ANX
Features
Unit
800VDSS
ID *1 A
V
V30
V/ns
150
Reverse diode dv/dt
IAR *3
Range of storage temperature Tstg
Power dissipation (Tc = 25°C)
°C
W
Junction temperature
A
dv/dt *5 15
55 to 150
ID,pulse *2
ID *1 2.4 A
A
Tj °C
mJEAR *4
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current 2.5
EAS *3
1.3
mJ
PD 51
1.66
(1)(3)(2)
(1) Gate(2) Drain(3) Source
1 BODY DIODE
∗1
(1) (2) (3)
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Data SheetR8005ANX
Drain - Source voltage slope dv/dtVDS = 640V, ID = 5A
-
Typ.
Symbol Conditions Values
Absolute maximum ratings
Thermal resistance
Thermal resistance, junction - case
Parameter
Max.Parameter
IGSS - nA
Tj = 125°C
V
V
0.1 A
1000
100-
-
Tj = 25°C
Drain - Source avalanchebreakdown voltage
-
800
ConditionsSymbol
V(BR)DS
-
Min.
Values
Typ.
100
-
Zero gate voltagedrain current
V(BR)DSS
VGS = 0V, ID = 2.5A
VGS = 0V, ID = 1mA
IDSS
Unit
Tsold
RthJA
Min.
RthJC
Symbol
-
Unit
°C/W
Values
V/nsTj = 125°C
50
-
2.41-
°C- 265
°C/W
UnitMax.
-
900
-
- 70
Gate threshold voltage VGS (th) VDS = 10V, ID = 1mA 3
Gate - Source leakage current VGS = 30V, VDS = 0V
-
- V5
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
Electrical characteristics(Ta = 25°C)
Parameter
Drain - Source breakdownvoltage
VDS = 800V, VGS = 0V
Gate input resistance RG f = 1MHz, open drain - 7.7 -
Static drain - sourceon - state resistance
Tj = 25°C - 1.60 2.08
Tj = 125°C -
RDS(on) *6
VGS = 10V, ID = 2.5A
3.69 -
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Data SheetR8005ANX
*1 Limited only by maximum temperature allowed.
*2 PW 10s, Duty cycle 1%
*3 L ⋍ 500H, VDD = 50V, RG = 25, starting Tj = 25°C
*4 L ⋍ 500H, VDD = 50V, RG = 25, starting Tj = 25°C, f = 10kHz
*5 Reference measurement circuits Fig.5-1.
*6 Pulsed
7.4
-
VGate plateau voltage V(plateau) VDD ⋍ 400V, ID = 5A - -
Gate - Drain charge Qgd *6
Parameter
Gate Charge characteristics(Ta = 25°C)
Rise time tr *6 ID = 2.5A
SymbolValues
17
VGS = 10V
- 4.4 -
Min.
21 -
Conditions
Total gate charge
Gate - Source charge Qgs *6 ID = 5A
Qg *6 VDD ⋍ 400V
11 -
-
Typ.
ns37 74
41 82
-
-
Max.Unit
nC
-
RG = 10 -
Turn - off delay time td(off) *6 RL = 160 -
Fall time tf *6
-
pF
- 16.8 -
- 41.2
Turn - on delay time td(on) *6 VDD ⋍ 400V, VGS = 10V -
Effective output capacitance,energy related
Effective output capacitance,time related
Co(er)
Co(tr)
VGS = 0VVDS = 0V to 640V
17
485 -
gfs *6 VDS = 10V, ID = 2.5A
pF-
Crss f = 1MHz - 21 -
250
Max.
Reverse transfer capacitance
Electrical characteristics(Ta = 25°C)
Parameter Symbol ConditionsValues
UnitMin. Typ.
2Transconductance
Input capacitance
1
Output capacitance Coss VDS = 25V -
- S
Ciss VGS = 0V -
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Data SheetR8005ANX
Peak reverse recovery current
Parameter Symbol ConditionsValues
Reverse recovery charge
trr *6
-
- 16.5
-
Qrr *6
Irrm *6
IS *1
ISM *2
Tc = 25°C
Body diode electrical characteristics (Source-Drain)(Ta = 25°C)
- 4.6 - C
VSD *6 VGS = 0V, IS = 5A
Typ.
Forward voltage
Reverse recovery time
UnitMin. Max.
Inverse diode continuous,forward current
Inverse diode direct current,pulsed
-
IS = 5A
di/dt = 100A/s
554
- -
-
0.00169
K/W Ws/KRth2 0.966 Cth2 0.0194
0.258 Cth1Rth1
Rth3 2.18 Cth3 0.461
Peak rate of fall of reverserecovery current
dirr/dt
-
Value
Typical Transient Thermal Characteristics
30
-
Symbol Value Unit Symbol
- A
A/s-Tj = 25°C
Unit
-
A
A
1.5 V
ns
20
5
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Data SheetR8005ANX
Electrical characteristic curves
0.0001
0.001
0.01
0.1
1
10
100
1000
0.0001 0.01 1 100
Ta = 25ºCSingle PulseRth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 70ºC/W
top D = 1D = 0.5D = 0.1D = 0.05D = 0.01D = Single
0
20
40
60
80
100
120
0 50 100 150 2000.001
0.01
0.1
1
10
100
0.1 1 10 100 1000
Ta=25ºCSingle Pulse
PW = 100s
PW = 1ms
PW = 10msOperation in this areais limited by RDS(on)
(VGS = 10V)
Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area
Pow
er D
issi
patio
n :
PD/P
Dm
ax. [
%]
Dra
in C
urre
nt :
ID
[A]
Junction Temperature : Tj [°C] Drain - Source Voltage : VDS [V]
Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width
Nor
mal
ized
Tra
nsie
nt T
herm
al R
esis
tanc
e : r
(t)
Pulse Width : PW [s]
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esig
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Data SheetR8005ANX
Electrical characteristic curves
0
0.5
1
1.5
2
2.5
3
3.5
4
0.01 0.1 1 10 100
Ta = 25ºCVDD = 50V, RG = 25VGF = 10V, VGR = 0V
0
200
400
600
800
1000
1200
1400
1600
1800
2000
1.0E+04 1.0E+05 1.0E+06
Ta=25ºC
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
Fig.4 Avalanche Current vs Inductive Load
Ava
lanc
he C
urre
nt :
IA
R[A
]
Coil Inductance : L [mH]
Fig.5 Avalanche Power Losses
Ava
lanc
he P
ower
Los
ses
: PA
R[W
]
Frequency : f [Hz]
Fig.6 Avalanche Energy Derating Curvevs Junction Temperature
Ava
lanc
he E
nerg
y :
EA
S/ E
AS
max
. [%
]
Junction Temperature : Tj [ºC]
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Data SheetR8005ANX
Electrical characteristic curves
0
1
2
3
4
5
0 10 20 30 40 50
Ta=150ºCPulsed
VGS= 10.0V
VGS= 4.5V
VGS= 8.0V
VGS= 7.0V
VGS= 6.5V
VGS= 6.0V
VGS= 5.0V VGS= 5.5V
0
0.2
0.4
0.6
0.8
1
0 1 2 3 4 5
Ta=150ºCPulsed
VGS= 10.0V
VGS= 4.5V
VGS= 8.0VVGS= 7.0V
VGS= 6.5V
VGS= 6.0V
VGS= 5.0V
VGS= 5.5V
0
0.2
0.4
0.6
0.8
1
0 1 2 3 4 5
Ta=25ºCPulsed
VGS= 10.0V
VGS= 4.5V
VGS= 8.0VVGS= 7.0VVGS= 6.5VVGS= 6.0V
VGS= 5.0V
Fig.7 Typical Output Characteristics(I) Fig.8 Typical Output Characteristics(II)
Fig.9 Tj = 150°C Typical Output
Characteristics(I)Fig.10 Tj = 150°C Typical Output
Characteristics(II)
Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]
Dra
in C
urre
nt :
ID
[A]
Dra
in C
urre
nt :
ID
[A]
Dra
in C
urre
nt :
ID
[A]
Drain - Source Voltage : VDS [V]
Dra
in C
urre
nt :
ID
[A]
Drain - Source Voltage : VDS [V]
0
1
2
3
4
5
0 10 20 30 40 50
VGS= 10.0V
VGS= 4.5V
VGS= 8.0V
VGS= 7.0V
VGS= 6.5V
VGS= 6.0V
Ta=25ºCPulsed
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Data SheetR8005ANX
Electrical characteristic curves
700
750
800
850
900
950
1000
1050
1100
-50 -25 0 25 50 75 100 125 150
2
3
4
5
6
-50 -25 0 25 50 75 100 125 150
VDS= 10VPlused
0.01
0.1
1
10
0.01 0.1 1 10
VDS= 10VPlused
Ta= 25ºCTa=25ºCTa=75ºCTa=125ºC
Fig.12 Typical Transfer CharacteristicsFig.11 Breakdown Voltage vs. Junction Temperature
Dra
in -
Sou
rce
Bre
akdo
wn
Vol
tage
: V
(BR
)DS
S[V
]
Dra
in C
urre
nt :
ID
[A]
Fig.13 Gate Threshold Voltagevs. Junction Temperature
Gat
e T
hres
hold
Vol
tage
: V
GS
(th)
[V]
Junction Temperature : Tj [°C]
Fig.14 Transconductance vs. Drain Current
Tra
nsco
nduc
tanc
e : g
fs[S
]
Drain Current : ID [A]
Junction Temperature : Tj [°C] Gate - Source Voltage : VGS [V]
0.001
0.01
0.1
1
10
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
VDS= 10VPlused
Ta=125ºCTa=75ºCTa=25ºCTa= 25ºC
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Data SheetR8005ANX
Electrical characteristic curves
0
1
2
3
4
5
0 2 4 6 8 10 12 14 16 18 20
ID = 2.5A
ID = 5.0A
Ta=25ºCPulsed
0
2
4
6
8
10
-50 -25 0 25 50 75 100 125 150
VGS= 10VPlused
ID = 2.5A
ID = 5.0A
Fig.15 Static Drain - Source On - StateResistance vs. Gate Source Voltage
Sta
tic D
rain
-S
ourc
e O
n-S
tate
Res
ista
nce
: RD
S(o
n)[
]
Gate - Source Voltage : VGS [V]
Fig.16 Static Drain - Source On - StateResistance vs. Junction Temperature
Sta
tic D
rain
-S
ourc
e O
n-S
tate
Res
ista
nce
: RD
S(o
n)[
]
Junction Temperature : Tj [ºC]
Fig.17 Static Drain - Source On - StateResistance vs. Drain Current
Sta
tic D
rain
-S
ourc
e O
n-S
tate
Res
ista
nce
: RD
S(o
n)[
]
Drain Current : ID [A]
0.1
1
10
0.01 0.1 1 10
VGS= 10VPlused
Ta=125ºCTa=75ºCTa=25ºCTa= 25ºC
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Data SheetR8005ANX
Electrical characteristic curves
1
10
100
1000
10000
0.01 0.1 1 10
tr
tf
td(on)
td(off)
VDD ≒ 400VVGS = 10VRG= 10Ta = 25ºCPulsed
0
2
4
6
8
10
12
0 5 10 15 20 25 30
Ta = 25ºCVDD= 400VID= 5APulsed
Fig.18 Typical Capacitancevs. Drain - Source Voltage
Cap
acita
nce
: C
[pF
]
Drain - Source Voltage : VDS [V]
Fig.20 Switching Characteristics
Sw
itchi
ng T
ime
: t [
ns]
Drain Current : ID [A]
Fig.21 Dynamic Input Characteristics
Total Gate Charge : Qg [nC]
Gat
e -
Sou
rce
Vol
tage
: V
GS
[V]
Cos
s S
tore
d E
nerg
y : E
OS
S[u
J]
Fig.19 Coss Stored Energy
Drain - Source Voltage : VDS [V]
1
10
100
1000
10000
0.01 0.1 1 10 100 1000
Coss
Crss
Ciss
Ta=25ºCf = 1MHzVGS = 0V
0
1
2
3
4
5
6
7
8
0 200 400 600 800
Ta=25ºC
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Data SheetR8005ANX
Electrical characteristic curves
Fig.22 Inverse Diode Forward Currentvs. Source - Drain Voltage
Inve
rse
Dio
de
For
war
d C
urre
nt :
IS
[A]
Source - Drain Voltage : VSD [V]
Fig.23 Reverse Recovery Timevs.Inverse Diode Forward Current
Rev
erse
Rec
over
y T
ime
: trr
[ns]
Inverse Diode Forward Current : IS [A]
0.01
0.1
1
10
0.0 0.5 1.0 1.5
VGS=0VPulsed
Ta=125ºCTa=75ºCTa=25ºCTa= 25ºC
100
1000
0.1 1 10
Ta=25ºCVGS = 0Vdi / dt = 100A / sPulsed
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Data SheetR8005ANX
Measurement circuits
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform
Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform
Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform
VGS
IG(Const.)
VDS
D.U.T.
ID
RL
VDD
90%
90% 90%
10% 10%
50%10%50%
VGS
Pulse width
VDS
ton toff
trtd(on) tftd(off)
VGS
RG
VDS
D.U.T.
ID
RL
VDD
VG
VGS
Charge
Qg
Qgs Qgd
VGS
RG
VDS
D.U.T.
IAS
L
VDD
IAS
VDD
V(BR)DSS
IAS2LEAS =
V(BR)DSS - VDD
V(BR)DSS12
VGS
RG
VDS
D.U.T.
IAS
L
VDD
DRIVER MOSFET
RG
D.U.T. LIF
VDD
trr
Irr 100%
Irr
IF
0
Irr 90%
drr / dt
Irr 10%
IAS
VDD
V(BR)DSS
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Data SheetR8005ANX
Dimensions (Unit : mm)
Dimension in mm / inches
D
b1
E1
E
e
b
c
F
A2
A1
AL
x A
A4
φp
Q
ATO-220FM
MIN MAX MIN MAX
A 16.60 17.60 0.654 0.693
A1 1.80 2.20 0.071 0.087
A2 14.80 15.40 0.583 0.606
A4 6.80 7.20 0.268 0.283
b 0.70 0.85 0.028 0.033
b1 1.10 1.50 0.043 0.059
c 0.70 0.85 0.028 0.033
D 9.90 10.30 0.390 0.406
E 4.40 4.80 0.173 0.189
e
E1 2.70 3.00 0.106 0.118
F 2.80 3.20 0.110 0.126
L 11.50 12.50 0.453 0.492
p 3.00 3.40 0.118 0.134
Q 2.10 3.10 0.083 0.122
x - 0.38 - 0.015
DIMMILIMETERS INCHES
2.54 0.100
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Notice-PGA-E Rev.003 © 2015 ROHM Co., Ltd. All rights reserved.
Notice Precaution on using ROHM Products
1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment, OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA
CLASSⅢ CLASSⅢ
CLASSⅡb CLASSⅢ
CLASSⅣ CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are designed and manufactured for use under standard conditions and not under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our Products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents [b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust [c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves [e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items [f] Sealing or coating our Products with resin or other coating materials [g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design. 5. Please verify and confirm characteristics of the final or mounted products in using the Products. 6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature. 8. Confirm that operation temperature is within the specified range described in the product specification. 9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design 1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products, please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
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Precautions Regarding Application Examples and External Circuits 1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation 1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [b] the temperature or humidity exceeds those recommended by ROHM [c] the Products are exposed to direct sunshine or condensation [d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton. 4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
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