proton-electrotex · 2020. 11. 12. · proton-electrotex electrically isolated base plate...
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PROTON-ELECTROTEX
Electrically isolated base plateIndustrial standard package Simplified mechanical design, rapid assemblyPressure contact
Single Thyristor ModuleFor Phase ControlMT1-650-12-B0
Mean on-state current ITAV 650 A
Repetitive peak off-state voltage VDRM1000 1200 V
Repetitive peak reverse voltage VRRM
Turn-off time tq 160 s
VDRM, VRRM, V 1000 1100 1200Voltage code 10 11 12Tj, C – 40 140
MT1
All dimensions in millimeters (inches)
2019-Apr-22 v0.2 © Proton-Electrotex Data Sheet MT1-650-12-B0 page 1 of 12
MAXIMUM ALLOWABLE RATINGS
Symbols and parameters Units Values Test conditions
ON-STATEITAV Mean on-state current A 650 Tc=85 C;
180 half-sine wave; 50 HzITRMS RMS on-state current A 1020
ITSM Surge on-state current kA
14.016.0
Tj=Tj max
Tj=25 C
180 half-sine wave; tp=10 ms; single pulse;VD=VR=0 V;Gate pulse IG=2 A; tGP=50 s; diG/dt≥1 A/s
15.017.0
Tj=Tj max
Tj=25 C
180 half-sine wave; tp=8.3 ms; single pulse;VD=VR=0 V;Gate pulse IG=2 A; tGP=50 s; diG/dt≥1 A/s
I2t Safety factor A2s.103
9801280
Tj=Tj max
Tj=25 C
180 half-sine wave; tp=10 ms; single pulse;VD=VR=0 V;Gate pulse IG=2 A; tGP=50 s; diG/dt≥1 A/s
9301190
Tj=Tj max
Tj=25 C
180 half-sine wave; tp=8.3 ms; single pulse;VD=VR=0 V;Gate pulse IG=2 A; tGP=50 s; diG/dt≥1 A/s
BLOCKING
VDRM, VRRMRepetitive peak off-state and Repetitive peak reverse voltages V 10001200
Tj min< Tj <Tj max;180 half-sine wave; 50 Hz;Gate open
VDSM, VRSMNon-repetitive peak off-state and Non-repetitive peak reverse voltages V 11001300
Tj min< Tj <Tj max;180 half-sine wave; single pulse; Gate open
VD, VRDirect off-state andDirect reverse voltages V
0.6.VDRM
0.6.VRRM
Tj=Tj max;Gate open
TRIGGERINGIFGM Peak forward gate current A 8
Tj=Tj maxVRGM Peak reverse gate voltage V 5PG Gate power dissipation W 4 Tj=Tj max for DC gate currentSWITCHING
(diT/dt)crit
Critical rate of rise ofon-state currentnon-repetitive (f=1 Hz)
A/s 400Tj=Tj max; VD=0.67.VDRM; ITM=2 ITAV;Gate pulse IG=2 A; tGP=50 s; diG/dt≥2 A/s
THERMALTstg Storage temperature C -40 50Tj Operating junction temperature C -40 140MECHANICALa Acceleration under vibration m/s2 50
2019-Apr-22 v0.2 © Proton-Electrotex Data Sheet MT1-650-12-B0 page 2 of 12
CHARACTERISTICS
Symbols and parameters Units Values Conditions
ON-STATEVTM Peak on-state voltage, max V 1.40 Tj=25 C; ITM=1978 AVT(TO) On-state threshold voltage, max V 0.85 Tj=Tj max;
0.5 ITAV < IT < 1.5 ITAVrT On-state slope resistance, max m 0.280
IL Latching current, max mA 1000Tj=25 C; VD=12 V;Gate pulse IG=2 A; tGP=50 s; diG/dt≥1 A/s
IH Holding current, max mA 300Tj=25 C;VD=12 V; Gate open
BLOCKING
IDRM, IRRMRepetitive peak off-state and Repetitive peak reverse currents, max mA 70
Tj=Tj max;VD=VDRM; VR=VRRM
(dvD/dt)crit Critical rate of rise of off-state voltage1), min
V/s 1000 Tj=Tj max;VD=0.67.VDRM; Gate open
TRIGGERING
VGT Gate trigger direct voltage, max V4.002.502.00
Tj= Tj min Tj=25 CTj= Tj max VD=12 V; ID=3 A;
Direct gate current
IGT Gate trigger direct current, max mA400250200
Tj= Tj min
Tj= 25 CTj= Tj max
VGD Gate non-trigger direct voltage, min V 0.25 Tj=Tj max; VD=0.67.VDRM;Direct gate currentIGD Gate non-trigger direct current, min mA 10.00
SWITCHING
tgd Delay time s 2.00
Tj=25 C; VD=600 V; ITM=ITAV; di/dt=200 A/s;Gate pulse IG=2 A; VG=20 V; tGP=50 s; diG/dt=2 A/s
tq Turn-off time2), max s 160dvD/dt=50 V/s; Tj=Tj max; ITM= ITAV;diR/dt=10 A/s; VR=100V;VD=0.67 VDRM;
Qrr Total recovered charge, max C 1170 Tj=Tj max; ITM=650 A;diR/dt=-10 A/s;VR=100 V
trr Reverse recovery time, max s 19IrrM Peak reverse recovery current, max A 123THERMAL
RthjcThermal resistance, junction to case
180 half-sine wave, 50 Hzper module C/W 0.0620
RthchThermal resistance, case to heatsink
per module C/W 0.0100INSULATION
VISOL Insulation test voltage kV3.00 Sine wave, 50 Hz;
RMSt=1 min
3.60 t=1 secMECHANICALM1 Mounting torque (M6)3) Nm 6.00 Tolerance 15%M2 Terminal connection torque (M10)3) Nm 12.00 Tolerance 15%w Weight, max g 900
2019-Apr-22 v0.2 © Proton-Electrotex Data Sheet MT1-650-12-B0 page 3 of 12
PART NUMBERING GUIDE NOTES
MT 1 - 650 - 12 - A2 T2 - B0 - N1 2 3 4 5 6 7 8
1. Thyristor module (MT)2. Circuit Schematic3. Average On-state Current, A4. Voltage Code5. Critical rate of rise of off-state voltage6. Group of turn-off time (dvD/dt=50 V/s)7. Package Type (M.B0)8. Ambient Conditions: N – Normal
1) Critical rate of rise of off-state voltageSymbol of group A2(dvD/dt)crit, V/s 1000
2)Turn-off time (dvD/dt=50 V/s)Symbol of group T2
tq, s 160
3) The screws must be lubricated
The information contained herein is confidential and protected by CopyrightIn the interest of product improvement, Proton-Electrotex reserves the right to change data sheet without notice.
2019-Apr-22 v0.2 © Proton-Electrotex Data Sheet MT1-650-12-B0 page 4 of 12
0,6 0,8 1 1,2 1,4 1,6 1,8 2 2,2 2,40
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
On
— s
tate
cur
rent
- I
TM, A
On — state voltage - VTM
, V
MT1
-650
-B0,
22-
Apr-
201925 °C
140 °C
Fig 1 – On-state characteristics of Limit device
Analytical function for On-state characteristic:
TTTT iDiCiBAV )1ln(
Coefficients for max curvesTj = 25oC Tj = Tj max
A 0.78716000 0.56998000B 0.00019322 0.00026256C 0.03287700 0.04592500D -0.00044410 -0.00063590
On-state characteristic model (see Fig. 1)
2019-Apr-22 v0.2 © Proton-Electrotex Data Sheet MT1-650-12-B0 page 5 of 12
0,00001 0,00010 0,00100 0,01000 0,10000 1,00000 10,00000 100,000000,00001
0,00010
0,00100
0,01000
0,10000
Per arm: 0.062 K/W
Time — t, s
MT1
-650
-B0,
22-
Apr-
2019
Tran
sien
t th
erm
al im
peda
nce
— Z
thjc, K
/W
Fig 2 – Transient thermal impedance Zthjc vs. time t
Analytical function for Transient thermal impedance junction to case Zthjc for DC:
n
i
t
ithjcieRZ
1
1
Where i = 1 to n, n is the number of terms in the series.
t = Duration of heating pulse in seconds.
Zthjc = Thermal resistance at time t.
Ri = Amplitude of pth term.
i = Time constatnt of rth term.
i 1 2 3 4 5 6Ri, K/W 0.0318699 0.0112 0.01635 0.0006528 0.001791 0.0001363i, s 3.132 1.000 0.2335 0.01038 0.002348 0.0002448
Transient thermal impedance junction to case Zthjc model (see Fig. 2)
2019-Apr-22 v0.2 © Proton-Electrotex Data Sheet MT1-650-12-B0 page 6 of 12
Fig 3 – Gate characteristics – Trigger limits
Fig 4 - Gate characteristics – Power curves
2019-Apr-22 v0.2 © Proton-Electrotex Data Sheet MT1-650-12-B0 page 7 of 12
1 10 100100
1000
10000
Commutation rate - di/dt, A/μss
Reco
vere
d ch
arge
- Q
rr-i,
μsC
Tj = 140 °C
ITM
= 650 A
MT1
-650
-B0,
22-
Apr-
2019
Fig 5 – Maximum recovered charge Qrr-i (integral) vs. commutation rate diR/dt
1 10 100100
1000
10000
Commutation rate - di/dt, A/μss
Reco
vere
d ch
arge
- Q
rr, μs
C
MT1
-650
-B0,
22-
Apr-
2019
Tj = 140 °C
ITM
= 650 A
Fig 6 – Maximum recovered charge Qrr vs. commutation rate diR/dt (25% chord)
2019-Apr-22 v0.2 © Proton-Electrotex Data Sheet MT1-650-12-B0 page 8 of 12
1 10 10010
100
1000
Commutation rate - di/dt, A/μss
Reve
rse
reco
very
cur
rent
- I
rrM
, A
MT1
-650
-B0,
22-
Apr-
2019 T
j = 140 °C
ITM
= 650 A
Fig 7 – Maximum reverse recovery current IrrM vs. commutation rate diR/dt
1 10 10010
100
Commutation rate - di/dt, A/μss
Reve
rse
reco
very
tim
e -
trr,
μss
Tj = 140 °C
ITM
= 650 A
MT1
-650
-B0,
22-
Apr-
2019
Fig 8 – Maximum recovery time trr vs. commutation rate diR/dt (25% chord)
2019-Apr-22 v0.2 © Proton-Electrotex Data Sheet MT1-650-12-B0 page 9 of 12
0 100 200 300 400 500 600 700 800 900 1000 11000
200
400
600
800
1000
1200
1400
1600
MT1
-650
-B0,
22-
Apr-
2019
Mean on-state current — IT(AV)
, A
Mea
n on
-sta
te p
ower
dis
sipa
tion
— P
T(A
V),
W
Ѳ=30º
Ѳ=60º
Ѳ=90º
Ѳ=120º
Ѳ=180º
Ѳ - angle of conduction Sinusoidal current waveforms
Fig. 9 - Mean on-state power dissipation PTAV vs. mean on-state current ITAV for sinusoidal currentwaveforms at different conduction angles (f=50Hz, DSC)
0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 15000
200
400
600
800
1000
1200
1400
1600
1800
2000
MT1
-650
-B0,
22-
Apr-
2019
Mean on-state current — IT(AV)
, A
Mea
n on
-sta
te p
ower
dis
sipa
tion
— P
T(A
V),
W
Ѳ=30º
Ѳ=60º
Ѳ=90º
Ѳ=120º
Ѳ=180º
Ѳ - angle of conduction Rectangular current waveforms
DC
Fig. 10 – Mean on-state power dissipation PTAV vs. mean on-state current ITAV for rectangular currentwaveforms at different conduction angles and for DC (f=50Hz, DSC)
2019-Apr-22 v0.2 © Proton-Electrotex Data Sheet MT1-650-12-B0 page 10 of 12
25 35 45 55 65 75 85 95 105 115 125 1350
100
200
300
400
500
600
700
800
900
1000
1100
1200
MT1
-650
-B0,
22-
Apr-
2019
Case temperature — TC, ˚C
Mea
n on
-sta
te c
urre
nt —
IT
(AV
), A
Ѳ=30º
Ѳ=60º
Ѳ=90º
Ѳ=120º
Ѳ=180º
Ѳ - angle of conduction Sinusoidal current waveforms
Fig. 11 – Mean on-state current ITAV vs. case temperature TC for sinusoidal current waveforms atdifferent conduction angles (f=50Hz, DSC)
25 35 45 55 65 75 85 95 105 115 125 1350
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
MT1
-650
-B0,
22-
Apr-
2019
Case temperature — TC, ˚C
Mea
n on
-sta
te c
urre
nt —
IT
(AV
), A
Ѳ=30º
Ѳ=60º
Ѳ=90º
Ѳ=120º
Ѳ=180º
Ѳ - angle of conduction Rectangular current waveforms
DC
Fig. 12 - Mean on-state current ITAV vs. case temperature TC for rectangular current waveforms atdifferent conduction angles and for DC (f=50Hz, DSC)
2019-Apr-22 v0.2 © Proton-Electrotex Data Sheet MT1-650-12-B0 page 11 of 12
1 10 1001
10
100
0,1
1
10
Surg
e on
-sta
te c
urre
nt –
IT
SM, k
A
Pulse length – tp, ms
Safe
ty fa
ctor
– I
2t,
kA2 s
MT1-650-B0, 22-Apr-2019
ITSM
:Vrm
<10V
ITSM
:Vrm
=0.67VRRM
I2t:Vrm
<10V
I2t:Vrm
=0.67VRRM
Tj = 140 °C
Fig. 13 – Maximum surge on-state current ITSM and safety factor I2t vs. pulse length tp
1 10 1001
10
100
Surg
e on
-sta
te c
urre
nt –
IT
SM, k
A
Number of pulses – np
Vrm
<10V
Vrm
=0.67VRRM
Tj = 140 °C
MT
1-65
0-B
0, 2
2-A
pr-2
019
Fig. 14 - Maximum surge on-state current ITSM vs. number of pulses np
2019-Apr-22 v0.2 © Proton-Electrotex Data Sheet MT1-650-12-B0 page 12 of 12