presentation of the national institute for research and physico-chemical analysis inrap pr. najoua...

PRESENTATION OF THE NATIONAL

INSTITUTE FOR RESEARCH AND

PHYSICO-CHEMICAL ANALYSIS

INRAP

PR. NAJOUA KAMOUN TURKIGENERAL DIRECTOR

Institut National de Recherche et d’Analyse Physicochimique

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PR NAJOUA KAMOUN TURKI GENERAL DIRECTOR OF INRAP

PrEsentation OF INRAP

Institut National de Recherche et d’Analyse Physicochimique

INRAP: was created by the law n°95-4 of january 1995.its specify in his section 2 the mission of the institute:•Develop and organize analytical tools in the country. •Provide to company, technical and scientific institution the means for performance, research, development and training in the field of physico-chemical analysis.


• A documentation center in terms of physico-chemical analysis.

•A technical service center: maintain and repair scientific equipement

used by INRAP,assistance to other agencies, implementation of specific

arrangements.

•An institute of research and development

•A training center

INRAP : was designed to be

INRAP constitutive

Analysis Researche

DocumentationMaintenanceTraining


Human ,Materiel

and logistical device

Human ,Materiel

and logistical device

Scientific equipment with an estimated value of 15 MD

INRAP has 170 public function workers

Total area of 3Ha wich 6000 m² of covered area

Analytical equipments of INRAPAnalytical equipments of INRAP

Separation technique

Liquid chromatography

(HPLC)

Gaz chromatography

(GC)

Inorganique elemental analysis

Atomic absorption

spectrometry (AAS)

Atomic emission spectrometry

(ICP-OES)

Mass spectrometryGC-HRMS

GC-MS

LC-MS-MS


Analytical equipments of

INRAP


INRAPInfrared Fourrier transform

environnemental scaning electron microscopy

UV-Visible spectroscopy X fluoressence

Thermal analysis ATD ATG DSC


X ray diffraction Organic elemental analysis CHNOS

Ionic chromatography

Water analysis Karl Fisher, Spectrophotometry (Na, K, Ca), DCO,

DBO5, Turbidity…)


INRAP


INRAP

GC-MS-MS

LC-MS-MS

NMR 500 MHz


INRAP


INRAP

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P1 Watch Normative

P2 MétrologyMétrology

Active contribution to the adoption of international standards and

adapt to national needs

- Establishing a connection string pH measurement and a

primary reference bench pH measurement.

- Certification of buffer solution

P3 Tools and methods of analysisTools and methods of analysis

LMTA: Laboratory of Analytical and technical LMTA: Laboratory of Analytical and technical methodmethod Research projectResearch project


USEFUL MATERIALS LABORATORY

Ministère de l’Enseignement Supérieur, et de la

recherche scientifique

Institut National de Recherche et

d’Analyse Physico-chimique

2 Research programs

1)Nano-structured Materials

-Hydrides and metal carbides nanomaterials

-Oxide nanomaterials: A patent is already

granted

2) Valuation of minerals and rare earths

-Characterization of minerals and rare earths

- Economic analysis and extraction of rare earths e-age December 12-13/2013

Nano-structured Materials

Applicationaccumulator Ni-MHFuel cell

Metal hydride

Metal carbide Application : High performance cutting tools


Program n°1: Bioactive substances of natural origin

Project 1 : Physico-chemical screening of naturally occurring substances

Project 2 : Demonstration of biological and pharmaceutical activities

Program n°2: The bio-polymers and formulation

Project 1 : The eco-compatible bio-polymers Project 2 : Formulation

Laboratory of natural substancesCode: LR10INRAP02

Year of creation: 2010


http://www.inrap.rnrt.tn

Synthesis and characterzation of low cost nanomaterials Synthesis and characterzation of low cost nanomaterials

used in photovoltaic devicesused in photovoltaic devices

Pr N. Kamoun Turki Director of Physics Condensed Matter


Geothermal

The waterfalls

The wind

Plant growth

Photovoltaic solar energy

Introduction: Renewable energies

14

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CBD: In2S3, ZnS, PbS, SnS, Cu2S : 5 Cot. Th,

2 CMCU: 03-09; AUF 2011-2012

Reagents and preparation of solution

Growth

mode

Atom-by-atom

Aglomeration clusters

Combinaison mécanisms

Deposition solution

Water bathThermometer

Agitator magnetic heating

Substrat

Nature of substrat+

Experimental Conditions


Effect of aluminum doping on the physical properties of thin films In2S3

16


500 1000 1500 2000 25000

20

40

60

80

100

Tran

smiss

ion

(%)

(nm)

0%

4%

3%1%

5%2%

Effect of Al doping (Optical properties)

14

Transmission spectra for different concentration ratios y = ([Al] /[In])sol

60 T(%) 75,

maximal transmission for y = 4%

It is a good value for the use of β-In2-xAlxS3 as optical windows in photovoltaic devices

0 500 1000 1500 2000 25000

20

40

60

80

100

Tran

smis

sion

(%)

(nm)

4%0%

1%

5%

2%

3%

In2S3:Al/verreIn2S3:Al/SnO2


Effect of tin doping on the physical properties of thin films In2S3

18


Influence of heat treatment on structural, optical and electrical properties of In2S3 chemically synthesized

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Effect of Fluorine doping on the optical and electrical properties of In2O3 elaborated for [In] =

0.04M and Ts = 500°C Tuniso-Algerian Project 2012-2013

Optical transmission and reflection

Fluorine doped indium oxide thin films have a high optical transmittance (is in order of

80%)Eg = 3.17 eV (y=0)Eg = 3.24 eV (F)

•OPTICAL WINDOW : PV devices

Fluorine doped indium oxide thin films have a high optical transmittance (is in order of

80%)Eg = 3.17 eV (y=0)Eg = 3.24 eV (F)

•OPTICAL WINDOW : PV devices

Electrical properties Thermally stimulated current

(TSC) of In2O3 :F (2%)TSC is almost constantTSC is almost constant

No traps in the material No traps in the material

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The Spin Coating technique


0 500 1000 1500 2000 2500

20

40

60

80

100

R (%)

T (%)

C = 1 g/l C = 2 g/l C = 3 g/l

0 500 1000 1500 2000 2500

20

40

60

80

R (%)

C = 1 g/l C = 2 g/l C = 3 g/l

T (%)

Oscillations appear: Effect of

interference.

86 < T < 89 % in Transparency

range.

Eg :Transition around 2,3 eV

T and R spectra of P3HT / SnO2:F/glass for different solution concentrations

T and R spectra of P3HT /glass for different solution concentrations

PhD: Wafa Naffouti

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EEFECT OF Ga INCORPORATION ON

PHYSICAL PROPERTIES OF CuInS2 THIN FILMS SUNTHESIZED BY CHEMICAL SPRAY

PYROLYSIS

PhD Mejda Ajili

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Chemical Spray pyrolysis

a nozzle fixed on a one-dimentional moving support allowing it to pulverize the whole isothermal zone containing the cleaned substrates placed on to heated system. The nitrogen was used as a carrier gas that serves to the pulverization of fine droplets of aqueous solution.


25

1,30 1,35 1,40 1,45 1,50 1,55 1,60 1,65 1,70

y= 0 at.% y= 5 at.% y= 10 at.% y= 15 at.% y= 20 at.%

Eg= 1.41 eV

Eg= 1.43 eVEg= 1.47 eV

Eg= 1.49 eV

(h

)2 (x

1012

( cm

-1eV

)2 )

h (eV)

0

5

10

Eg= 1.52 eV

Fig. Variation of (αhν)2 with photon energy (hν) of sprayed CIGS thin films at different [Ga].

For y varying from 10 to 20 at.%, Eg is in the interval [1.47-1.52] eV which is in suitable range for sunlight absorption.


30 40 50 60 70 80

(220)

(220)

(112)

(112)

Inte

nsity

u.a

.

°)

Ts = 280 °C

Ts = 240 °C

Ts = 200 °C

(112)

(220)

*

* CuxS

EFFECT OF SUBSTRATE TEMPERTURE Ts ON THE STRUCTURE OF Cu2ZnSnS4 : CZTS Spray

The spectra indicate a kesterite structure of CZTS. All films are found to

contain a very small peack (*) corresponding to CuxS secondary phase

The best cristallinity : Ts = 280 °C

The spectra indicate a kesterite structure of CZTS. All films are found to

contain a very small peack (*) corresponding to CuxS secondary phase

The best cristallinity : Ts = 280 °C

26

The band gap energy of CZTS grown at 280 °C is in the order of 1.53 eV.

Z. Seboui, Y. Cuminal and N. Kamoun J. Renewable and Sustainable Energy, 5 (2013).

27[1] Meriem Reghima, Anis Akkari, Michel Castagné and Najoua Kamoun-Turki, journal of the Renewable and Sustainable energy, 4, 011602 (2012)

zinc blende structure

[1]

Eg SnS:In [1] Eg undoped SnS [2] Increase of cristallite size

transparency region

weak interference

fringes

uniform thickness as well

as smooth surfaces

[2] A. Akkari, C. Guasch, N. Kamoun-Turki; Journal of Alloys and Compounds 490 (2010) 180–183

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Substrate

SnO2:F // Opt.W / B.L / Absorber//Ohmic.C

opti

cal

win

dow

Oh

mic

con

tact

Ab

sorb

er

Con

tact

28

Bu

ffer

laye

rTZO/In2S3/CIGS

SnO2:F/ZnO:Sn/In2S3/SnS:Cu/Au

SnO2 :F/ZnO:Sn/In2S3/SnS:In/Au

SnO2:F/ZnO:Sn/In2S3/CuInS2:Ga/Au

SnO2 :F/ZnO:Sn/In2S3/Cu2ZnSnS4/Au

SnO2:F/In2O3/In2S3/SnS:Cu/Au

SnO2 :F/In2O3/In2S3/SnS:In/Au

SnO2:F/In2O3:F/In2S3/CuIn(1-x)GaxS2/Au

SnO2 :F/In2O3:F/In2S3/Cu2ZnSnS4/Au

Conclusion

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presentation of the national institute for research and physico-chemical analysis inrap pr. najoua...

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