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From Technologies to Market
GaN Power Epitaxy, Devices,
Applications and Technology Trends
From Technologies to Market
October 2017
Sample
2
Biographies & contacts
Dr. Ana Villamor
Dr Ana Villamor serves as a Technology & Market Analyst | Power Electronics at Yole Développement. She is involved in manycustom studies and reports focused on emerging power electronics technologies at Yole Développement, including devicetechnology and reliability analysis. Previously Ana was involved in a high-added value collaboration related to of SJ PowerMOSFETs, within the CNM research center for the leading power electronic company ON Semiconductor. During thispartnership and after two years as Silicon Development Engineer, she acquired a relevant technical expertise and a deepknowledge of the power electronic industry. Ana is author and coauthor of several papers as well as a patent. She holds anElectronics Engineering degree completed by a Master in micro and nano electronics, both from UAB (SP).
E-mail: [email protected]
Zhen Zong
Zhen Zong works as an analyst for Power Elec tronics and Compound Semiconductors technologies and market at YoleDéveloppement, the “More than Moore” strategy consulting and market research company. He graduated from INSA Lyon withan engineering degree in material sciences, specialized in semiconductor devices and Micro/Nano technologies.
E-mail: [email protected]
3
COMPANIES CITED IN THIS REPORT
Aixtron, Allos, Alpha&Omega, Amec, Apple, AT&S, BMW, Coorstek, Dialog Semiconductors, Dowa, Efficient Power Conversion, EpiGaN, Episil, Epistar, Evatran, Exagan, Fairchild, Ford, Fuji Electric, GaN Systems, Imec, Infineon, IQE, LG electronics, Jedec, Kyma,
Navitas Semiconductors, Neditek, NXP, On Semiconductor, Panasonic, Philos, Powerex, Power Integrations, Qualcomm, Samsung, Sanken, SAS, Sharp, Siltronic, STMicroelectronics, Sumco, Sumitomo SEI, Toshiba, Toyota, Tesla, Texas Instruments, TSMC,
Transphorm, Veeco, Velodyne, VisIC Technologies, Xfab, Yaskawa, and more.
4
COMPLEMENTARY REPORT
GaN-on-SiliconTransistor Comparison 2018Structural, Process & Costing Report
By System Plus Consulting
Dive deep into the technology and cost of GaN-on-silicon
HEMTs from EPC, Transphorm, GaN Systems, Panasonic and
Texas Instruments.
Bundle offer possible for the Power GaN 2017 Report by Yole
Développement, contact us for more information.
COMPLETE TEARDOWN WITH:
• Detailed photos and identification
• Scanning Electron Microscope and EnergyDispersive
X-Ray analyses of transistor structures
• Transmission Electron Microscopy analysis of epitaxy
layers
• Manufacturing process flow
• In-depth economic analysis
• Manufacturing cost breakdown
• Estimated sales price
• Comparison between EPC, Texas Instruments,
Transphorm, GaN Systems, and Panasonic
Get more here
5
WHY USE WBG IN POWER?
WBG power devices allowloss reduction, and/or size and weightreduction
Three times wider
bandgap than silicon,
allowing a breakdown field
ten times higher.
Three times the
thermal conductivity of
silicon.
Low Rdson
System size and
weight reduction
Fast switching
Intrinsic
properties
Device
performance
System
benefits
High current
density
Reduction of
conduction and
switching loss
High temperature
operation
Yole Développement - 2017
7
GAN POWER DEVICE MARKET - PROJECTION
Split by application
The total GaN-based
power device market is
expected to reach $450M
in 2022 CAGR 2016 - 2022
45%
72%
73%
149%
42%
/
55%
/
114%
84%TOTAL $11,5 M $19,3 M $45,9 M $86,0 M $171,0 M $304,2 M $452,7 M
8
GAN POWER APPLICATION OVERVIEW
Power GaN 2017: Epitaxy, Devices, Applications, and Technology Trends
9
MARKET DEVELOPMENT: DISCUSSION
Scenarios
GaN needs to be reliable and qualified fast, which would lead to an increase of production and a decrease of the price
Power GaN 2017: Epitaxy, Devices, Applications, and Technology Trends
Volume
Time
xxxxxxxxxxxx
GaN will be certainly used on that
applications because of its performance
GaN if SiC takes some
market in EV/HEV & PV
GaN if it can be fast
adopted in EV/HEV and PV
Higher volume lower cost More volume
Competition with SiC
xxxxxxx
2017 2022
10
COMMERCIAL GAN POWER DEVICES ANALYSIS
Presenting different FOM for the main
manufacturers
Power GaN 2017: Epitaxy, Devices, Applications, and Technology Trends
11
GaN POWER DEVICE TECHNOLOGY
Importance of the supply
•Different reliability
depending on
manufacturers /
process
•Technological
process depends on
the fab and the
required output
12
TECHNICAL CHALLENGES
Packaging roadmapIn
duct
ance
Time
TO
Embedded die
LGA/BGA: WLP
Low inductance, can go to high voltage
More players are looking for this solution
Extremely low
inductance
SiP
+ DRIVER
GaN transistorPossible future solution
for majority of players:
co-package GaN device
with driver
SMD
LGA cannot be used for high voltage
Yole Développement 2017POWER IC
13
GAN PACKAGING TYPE OVERVIEW
There are different packaging
solutions for Power GaN
Power GaN 2017: Epitaxy, Devices, Applications, and Technology Trends
14
GaN RELIABILITY ANALYSIS
March 2014, UCSB Institute for
Energy Efficiency Technology
Roundtable: Stds for GaN Power
Electronics (Mishra, NIST)
APEC 2015, IEEE PELS Standards
Group meets with SiC Focus
IEDM 2015, IEEE EDS Holds
Discussion: « Guidelines and
Standards for Reliability
Testing in Power
Electronics »
Dec 2015, IEEE PELS
Launches Proposal for
International
Technology Roadmap
for Wide Bandgap
WiPDA at VT Nov 2015, Tim McDonald
Presents on GaN Reliability – Generates Several
Volunteers for GaN Standards activity to Tim
McDonalds & Stephanie Watts Butler
JEDEC Board of Directors Investigates
Future Needs of Industry – Ultimately
Issuing Survey Right after APEC 2016
WiPDA2016: Review existing literature
and data and propose focus area GaN
specific topics that need to be covered
APEC 2017: Validation
of ProposedTopics Lists
WiPDA2017: First
JC-70 committee
meeting
2015 2016 2017GANSPEC DWG
GANSPEC DWG: evolution
We are
here
New JEDEC committee: JC-
70 Wide Bandgap Power
Electronic Conversion
Semiconductors
15
GaN RELIABILITY ANALYSIS
Reliability actual qualification examples
Qualification tests for GaN must be extended beyond JEDEC, to include aggressive robustness testing conducted until the sample fails
Beyond JEDEC (additional testing)Dynamic On-Resistance
Testing (final test)
Even GaN have proved good
reliability in many cases, there is
the need of standardization to give
confidence to the market.
*Non exhaustive list
Standard JEDEC tests:
Extended JEDEC tests:
16
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− Acoustic MEMS and Audio Solutions 2017
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− 3D Imaging & Sensing 2017
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− Status of Power Electronics Industry 2017
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− 5G Impact on RF Industry: From Wireless Infrastructure to Cellphone Terminals
2017
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− Passive Components Technologies and Market Trends for Power Electronics 2016
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− Thermal Management Technology and Market Perspectives in Power Electronics and
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− GaN RF Devices Market: Applications, Players, Technology and substrates 2016
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− Beyond Li-ion Batteries: Present and Future Li-ion Technology Challengers 2016
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− Opportunities for Power Electronics in Renewable Electricity Generation 2016
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