power gan market & technology trends 2014 report by yole developpement

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© 2014 Copyrights © Yole Développement SA. All rights reserved. Power GaN GaN technologies for power electronic applications: Industry and market status & forecasts 2014 edition 75, cours Emile ZOLA, F-69100 Villeurbanne, France Tel: +33 472 83 01 80 - Fax: +33 472 83 01 83 Web: http://www.yole.fr Dow corning FBH EpiGaN AZZURRO FBH EPC Corp. IMEC YOLE DEVELOPPEMENT

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The GaN power industry is consolidating in preparation for significant growth 80% ANNUAL GROWTH FROM 2016-2020! Overall, 2020 could see an estimated device market size of almost $600M, leading to approximately 580,000 x 6” wafers to be processed. Ramp-up will be quite impressive starting in 2016, at an estimated 80% CAGR through 2020, based upon a scenario where EV/HEV begins adopting GaN in 2018-2019. The power supply/PFC segment will dominate the business from 2015-2018, ultimately representing 50% of device sales. At that point, automotive will then catch-up. In UPS applications, the medium-power segment is likely to be very much in line with the GaN value proposition, and savings at system level will be demonstrated. We think GaN technology could grab up to 15% of market share in this field by 2020. Room for extra cost in motor drive applications is unlikely. Therefore, the incentives to implement new technologies such as GaN have to be serious and strong. Considering the possible improvement of conversion efficiency, and augmented by a predictable price parity with Si solutions by 2018, we expect GaN to start being implemented at a slow rate in motor control by 2015-2016, and reach around $45M in revenue by 2020. The PV inverters segment has already adopted SiC technology, and products are now commercially available. It’s possible that GaN could partially displace SiC thanks to better price positioning. However, now that SiC is in place, qualifying GaN may be more challenging. This report illustrates the full coverage of GaN device market data, split by application and through 2020. More information on that report at http://www.i-micronews.com/reports/Power-GaN-Market/3/443/

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Page 1: Power GaN Market & technology trends 2014 Report by Yole Developpement

© 2014

Copyrights © Yole Développement SA. All rights reserved.

Power GaNGaN technologies for power electronic applications:

Industry and market status & forecasts2014 edition

75, cours Emile ZOLA, F-69100 Villeurbanne, France

Tel: +33 472 83 01 80 - Fax: +33 472 83 01 83

Web: http://www.yole.fr

Dow corning

FBHEpiGaN

AZZURRO

FBH EPC Corp. IMECYOLE DEVELOPPEMENT

Page 2: Power GaN Market & technology trends 2014 Report by Yole Developpement

© 2014 • 2Copyrights © Yole Développement SA. All rights reserved.

GaN Devices in Power Application2010-2020 market size, split by application

Executive Summary

YOLE DEVELOPPEMENT

Page 3: Power GaN Market & technology trends 2014 Report by Yole Developpement

© 2014 • 3Copyrights © Yole Développement SA. All rights reserved.

GaN-based Power ElectronicsEstimated accessible markets, growth rate, and time to market

GaN Power Electronics

40-600V 600V

650V

1.2kV

600V

600V

1.2kV

600V

600V 1.7–6.5 kV1.7kV

Written in the bubbles is

the main device voltage

target for GaN

Bubble size is related to

Si device market as of

2013, most likely

accessible to GaN

1.2kV

YOLE DEVELOPPEMENT

Page 4: Power GaN Market & technology trends 2014 Report by Yole Developpement

© 2014 • 4Copyrights © Yole Développement SA. All rights reserved.

% of GaN revenues by company headquarter

location. 2010-2020

Executive Summary

US domination

(IR & EPC)

Japan ramp-up Taiwan & Korea starting

Japan ramp-up

Europe + Japan starting

YOLE DEVELOPPEMENT

Page 5: Power GaN Market & technology trends 2014 Report by Yole Developpement

© 2014 • 5Copyrights © Yole Développement SA. All rights reserved.

6” GaN-on-Si Epiwafer MarketPrice evolution roadmap to 2020

Executive Summary

Based upon R&D volumes up to 2011, qualification volumes in 2012 & 2013, then production volume orders beyond 2013

Epiwafer is 6 to 7µm GaN epilayer

Dislocation Density in the ~108 / cm²

Carrier is Si (111)

Bow is < 30µm

YOLE DEVELOPPEMENT

Page 6: Power GaN Market & technology trends 2014 Report by Yole Developpement

© 2014 • 6Copyrights © Yole Développement SA. All rights reserved.

6” (equiv.) wafer market volume demand2010-2020 market volume, split by application, in units

Executive Summary

The calculation here is based on 6” equivalent substrates. We expect the market will be ~100% 6” from now to 2015, then 8” will be introduced

and will handle 50% of the processed surface in 2020.

300mm GaN-on-Si is not forecast until 2020. That simulates what could be the market $ is 100% is sourced from external merchant suppliers

YOLE DEVELOPPEMENT

Page 7: Power GaN Market & technology trends 2014 Report by Yole Developpement

© 2014 • 7Copyrights © Yole Développement SA. All rights reserved.

Our prediction for 2013-2020 power

electronics envisioned evolution (1/2)

YOLE DEVELOPPEMENT

Page 8: Power GaN Market & technology trends 2014 Report by Yole Developpement

© 2014 • 8Copyrights © Yole Développement SA. All rights reserved.

GaN transistor type acceptance matrix

Noff (E-mode)

Native

Noff

cascodeNon (D-mode)

Application A 2 2 2Application B 2 3 3Application C 2 3 3Application D 2 3 4Application E 2 3 3Application F 2 3 4Application G 2 3 3Application H 2 3 3Application I 1 4 4Application J 1 4 4

1: Mandatory 2: most likely / preferred

3: possible alternate 4: non-suitable

YOLE DEVELOPPEMENT

Page 9: Power GaN Market & technology trends 2014 Report by Yole Developpement

© 2014 • 9Copyrights © Yole Développement SA. All rights reserved.

Main Power GaN Players and Related Business Model

Company GaN epiwafer GaN device GaN-on-xx Wafer Ø Comments

Company A X FL Sapphire Spin-off Univ. S. Carolina

Company B X Si, SiC, Sapphire 2” to 6”

Company C (X) X Si 6” & 8” 400m² GaN pilot line in Belgium

Company D (X) X Si 6”600V Noff Gate Injection HEMT samples by March 2013

Company E X Sapphire 2” & 4”

Company F (X) (X) Sapphire 4”For internal use only: PFC module. Up to 650V

Company G (X) X SiC 4” Open foundry. 650V/30A product.

Company H (X) X Silicon 6”First HEMT demo exhibited in Oct 2012. App is contactless charging

Company I (X) X Si 5” Super Lattice technique

Company J (X) X Si 600V HEMT samples by April 2013

Company K (X) X Bulk GaN

Company L X Silicon 6” & 8”MOCVD in house (Tsukuba). 3 to 5µm thick

Company M ? X Si Monolithic integration of GaN IC

Company N (X) X SiC

Company O (X) X SiC & Si 4” & 6”Agreement with XXX for R&D and manufacturing

Company P FL S.I. SiC MOSHEMT structure. Noff

Source: Yole Développement

GaN Industry

FL: Fab-less business model. Design only

(X): For internal purpose only: no merchant businessPower GaN pure-players

YOLE DEVELOPPEMENT

Page 10: Power GaN Market & technology trends 2014 Report by Yole Developpement

© 2014 • 10Copyrights © Yole Développement SA. All rights reserved.

Ref XXX SJ MOSFET

Process cost analysis

Courtesy of System Plus Consulting

YOLE DEVELOPPEMENT

Page 11: Power GaN Market & technology trends 2014 Report by Yole Developpement

© 2014 • 11Copyrights © Yole Développement SA. All rights reserved.

Payback Time EstimationOverall results

It would take almost 4 years

to absorb full-GaN PFC extra

cost for a LCD TV set usage

For a 24/7 operation

(data center or telecom

server) the ROI is

obtained in < 1year

From 2018, the intrinsic cost of GaN PFC

could become cheaper than the silicon

version.

PFC, DC-DC & POL Market

YOLE DEVELOPPEMENT

Page 12: Power GaN Market & technology trends 2014 Report by Yole Developpement

© 2014 • 12Copyrights © Yole Développement SA. All rights reserved.

• AC Slow charger on-board: – Power: X.X to X.2 kW. Average: X.6 kW

– Standard socket (110-220V 10A, 16A, 32A, single-phase) available in home

– Devices: MOSFET + diodes

• AC Quick charger on-board: – Power: X1 to X2 kW. X3 W after 2020. Average: X2 kW

– Specific socket: 380-400V, 32A to 63A 3-phase

– Devices: IGBT + diodes

– Average power module price / car: $X00

• DC quick charger off-board:– Power: 50kW+. Based upon charging station

“street charger”

Topologies of EV Chargers

Off board On board

Grid Battery

BatteryGrid

Off board On board

EV/pHEV battery charger

YOLE DEVELOPPEMENT

Page 13: Power GaN Market & technology trends 2014 Report by Yole Developpement

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Founded in 1998, Yole Développement has grown to become a group of companies providing marketing, technology and strategy consulting, media in addition to corporate finance services. With a strong focus on emerging applications using silicon and/or micro manufacturing (technology or process), Yole Développement group has expanded to include more than 50 associates worldwide covering MEMS, Compound Semiconductors, LED, Image Sensors, Optoelectronics, Microfluidics & Medical, Photovoltaics, Advanced Packaging, Manufacturing, Nanomaterials and Power Electronics. The group supports industrial companies, investors and R&D organizations worldwide to help them understand markets and follow technology trends to develop their business.

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