power electronics

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POWER ELECTRONICS Instructor: Eng.Moayed N. EL Mobaied The Islamic University of Gaza Faculty of Engineering Electrical Engineering Department م ي ح ر ل ا ن م ح ر ل ه ا ل ل م ا س بEELE 5450 — Fall 2009-2010 Lecture 3

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بسم الله الرحمن الرحيم. The Islamic University of Gaza Faculty of Engineering Electrical Engineering Department. POWER ELECTRONICS. EELE 5450 — Fall 2009-2010. Instructor: Eng.Moayed N. EL Mobaied. Lecture 3. Chapter Two. Power Semiconductor Diodes. - PowerPoint PPT Presentation

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Page 1: POWER  ELECTRONICS

POWER ELECTRONICS

Instructor: Eng.Moayed N. EL Mobaied

The Islamic University of GazaFaculty of EngineeringElectrical Engineering Department

الرحمن الله بسمالرحيم

EELE 5450 — Fall 2009-2010

Lecture 3

Page 2: POWER  ELECTRONICS

Chapter Two

Power Semiconductor Diodes

Power diodes have large power-, voltage-, current-handling capabilities than that of ordinary signal diodes.

Page 3: POWER  ELECTRONICS

Chapter Two

Power Diodes symbol and type of packaging

Page 4: POWER  ELECTRONICS

Chapter Two

Diode Characteristics

Page 5: POWER  ELECTRONICS

Chapter Two

V-I characteristicsForward-biased regionReverse biased region Breakdown region

Page 6: POWER  ELECTRONICS

Chapter Two

N=1,2( Germanium, Silicon) practically 1.1—1.8

)1( TnVdV

eII SD

qKt

TV

Shockley’s equation

VT= Thermal voltage

IS= Saturation current

Cechelectronicofmagnitudetheisq

CintemthekelvinsinetemperaturabsoultetheisT

kjtconssBoltzmanisk

1910*6.1arg

237

/2310*38.1tan'

Page 7: POWER  ELECTRONICS

Chapter Two

Shockley diode equation

Page 8: POWER  ELECTRONICS

Chapter Two

Forward-bias VD>0

Page 9: POWER  ELECTRONICS

Chapter Two

Reverse-bias VD<0

Page 10: POWER  ELECTRONICS

Chapter Two

Reverse Recovery Characteristics

2(2.8)RR

RRrr

QI

t

2(2.10)

/RR

rr

Qt

di dt 2 (2.11)RR RR

diI Q

dt

(2.5)rr a bt t t Tb/Ta is the softness factor (SF)

Page 11: POWER  ELECTRONICS

Chapter Two

Power Diode Types

Ideally, a diode should have no reverse recovery time, However, the manufacturing cost of such diode will increase.

The power diodes can be classified into three categories:

Standard or general-purpose diodes Fast-recovery diodes Schottky diodes

Page 12: POWER  ELECTRONICS

Chapter Two

Standard or general-purpose diodes

Reverse recovery time= 25 us (relatively high).Used in Low-speed applications.Current rating : From less than 1 Ampere to several

thousands of Amperes.Voltage rating 50 v to 5 kV.

Page 13: POWER  ELECTRONICS

Chapter Two

Fast-Recovery Diodes

Reverse recovery time< 5 us ( Low).Used in DC-DC and DC-AC converter circuit (high

speed applications).Current rating : From less than 1 Ampere to several

hundreds of Amperes.Voltage rating 50 v to 3 kV.Platinum or gold.

Page 14: POWER  ELECTRONICS

Chapter Two

Schottky Diodes

No minority carriers .

Recovered charge is much less than P-n junction diodes.

Used in high current and low voltage dc power supplies.

Current rating : From 1 Ampere to 300 Amperes.

Voltage rating <100 V.

Page 15: POWER  ELECTRONICS

Chapter Two

End of Lecture **** Eng.moayed

The reverse recovery time of a diode is trr=3us and the rate of fall of the diode current is di/dt=30 A/usDetermine (a) the storage charge Qrr

(b) Peak reverse current Irr