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TRANSCRIPT
PMIC Technology Trends in Foundry IL YONG PARK, SRI SARIPALLE - Product Management
Nov. 12, 2014
GLOBALFOUNDRIES Confidential
Contents
• Introduction to Analog/Power
• Basic Power Device Concept
• Trends in PMIC Technology (BCD) in Foundry
GSA Seminar - Nov. 12, 2014 2
GLOBALFOUNDRIES Confidential
Mega Trends That Will Drive the Economy, Technology and Semiconductors
GSA Seminar - Nov. 12, 2014 3
The Cloud will
cause upheaval in IT
Mobile computing will
continue to converge
functions and drive
compute power
Internet of Things will drive
mobile processing at low
power with ubiquitous RF
Coverage and insatiable
bandwidth needs will drive
Next-Gen Wireless
Increasing Security
concerns at all levels:
government, enterprise
and personal
Energy Efficiency is
needed for sustainability
& lower cost of ownership
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Analog is Everywhere!
GSA Seminar - Nov. 12, 2014 4
Analog
Semiconductor
ICs
2011 2012 2013 2014 2015 2016 2017 2018
Analog IC Market [$B]
Source: IC Insights
Analog market is growing steadily because analog chips are essential element to bridge
between real-world signals and digital world
Analog and Power don’t shrink as well as logic, so there is less benefit to moving to smaller
process technologies. Analog/Power designs can stay on a given process node for 5-7 years
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Fast Growing Market in Power Management
• Automotive
• Smart Phones
• Other Cell Phones
• TVs
• High End Consumer
• Desktop PCs
• Servers
• Notebooks
• Tablet PCs
• Cellular Infrastructure
• Fixed Communications
• Merchant Power Supplies
• Lighting
• Industrial
• Medical
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2011 2012 2013 2014 2015 2016 2017 2018
PM IC Market [$B]
Source: IMS Research
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Fast Growing Market in Power Management
• Automotive
• Smart Phones
• Other Cell Phones
• TVs
• High End Consumer
• Desktop PCs
• Servers
• Notebooks
• Tablet PCs
• Cellular Infrastructure
• Fixed Comms
• Merchant Power Supplies
• Lighting
• Industrial
• Medical
GLOBALFOUNDRIES Confidential 6
2010r 2011 2012 2013 2014 2015 2016
Servers
Smart Phones
Lighting
Tablet PCs
Source: IMS Research
14.9%
8.8%
22.5%
20.3%
CAGR
Basic Power Device Concept
GSA Seminar - Nov. 12, 2014 7
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Does PMIC follow Moore’s Law?
GSA Seminar - Nov. 12, 2014 8
12 V Combo Motor Driver IC
1999 2001
2003 2005
If Power IC Follows Moore’s Law
.25m
Power IC doesn’t follow Moore’s Law
Source: Mixed-Signal Analog, C.S. Lee, Texas Instruments presentation material
Dr. Gordon E. Moore co-founded Intel
in 1968.
His observation that number of
transistors doubled every 2 years
became known as “Moore’s Law”
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Ideal and Typical Power Switching Waveforms
GSA Seminar - Nov. 12, 2014 9
Ideal Power Switch
Vo
lta
ge
0 tON T
t
On-State Off-State
Cu
rre
nt
t 0 tON T
Po
we
r
0 tON T
t
I x V(=0)=0
I(=0) x V=0
“Zero Power Dissipation”
• Ideal Power Switch has no power dissipation
• Zero leakage currents
• Infinite Breakdown Voltage
• Zero On-Resistance
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Ideal and Typical Power Switching Waveforms
GSA Seminar - Nov. 12, 2014 10
Ideal Power Switch
Vo
lta
ge
0 tON T
t
On-State Off-State
Cu
rre
nt
t 0 tON T
Po
we
r
0 tON T
t
I x V(=0)=0
I(=0) x V=0
“Zero Power Dissipation”
Actual Power Switch
Vo
ltag
e
0 t
Cu
rre
nt
t 0
On-State Off-State
IL
IF
VF
VR
Po
we
r
0 t
“Non-Zero Power Dissipation”
• Ideal Power Switch has no power dissipation
• However, actual Power Switch generates power dissipation due to leakage currents and non-zero Ron, Vf
Actual Power Switch
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Ideal and Typical Power Switching Waveforms
GSA Seminar - Nov. 12, 2014 11
Ideal Power Switch
Vo
lta
ge
0 tON T
t
On-State Off-State
Cu
rre
nt
t 0 tON T
Po
we
r
0 tON T
t
I x V(=0)=0
I(=0) x V=0
“Zero Power Dissipation”
Actual Power Switch
Vo
ltag
e
0 t
Cu
rre
nt
t 0
On-State Off-State
IL
IF
VF
VR
Po
we
r
0 t
“Non-Zero Power Dissipation”
• Ideal Power Switch has no power dissipation
• However, actual Power Switch generates power dissipation due to leakage currents and non-zero Ron, Vf
• Mobile PMIC integrates many power switches so low Ron is very important
• To reduce the form factor of passive devices, the switching frequency of power switch has to be increased Psw > Pdc
High Freq. LDMOS (Low Ron x Qg) is preferred
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DEMOS vs. LDMOS, On-Resistance
GSA Seminar - Nov. 12, 2014 12
• On-Resistance [ohm]
Ron = Vds/Ids
@ Vgs=Max Vg, Vds=0.1V
• Specific On-Resistance [ohm-mm2]
Rsp = Ron x Area
= Ron x Total W x Half Pitch • Uniform channel doping
• Vt compatible with CMOS
• Variable W and L
• High breakdown, medium Ron
<DECMOS Structure>
• Double-diffused channel (non-uniform)
• Vt normally 1.0~1.5V (higher than CMOS)
• Fixed L, Variable W
• High breakdown voltage, very low Ron
• Used as a output ‘Power Device’
• Shorted source and body (to suppress NPN parasitic bipolar turn-on)
<LDMOS Structure>
PMIC Technology (BCD) in Foundry
GSA Seminar - Nov. 12, 2014 13
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PMIC Technology Offering by Foundry
GSA Seminar - Nov. 12, 2014 14
IDM dominates PMIC Technology
(~1990s)
IDM Transferred PMIC Technology to Foundry
Startups / Fabless develop PMIC
(~2000s)
Foundry develops PMIC Technology
(0.6um~0.09um)
(~2010s)
IVR (Integrated Voltage Regulator)
On-chip passives
3D Integration
Foundry and IDM co-develop specialty technology
Only a few foundry can offer advanced CMOS logic capability
• Mega PMIC for Smartphone by Fabless companies increases
• Foundry shipment also increases
• Moving to 300mm
• GLOBALFOUNDRIES is the first foundry offering 300mm BCDliteTM
Application Processor PMIC
Current Smartphone
2011 2012 2013 2014 2015 2016 2017 2018
Premium Mobile Phone Shipment Forecast
Gartner IDC
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High Performance BCD
GSA Seminar - Nov. 12, 2014 15
• As demands increase for more functionality in modern mobile devices, power-management capabilities become more complex
• Therefore more logic density has been required
• Modular concept is required to select the process options for product with minimum cost
180nm 130nm 65nm/ 55nm/ 40nm
GLOBALFOUNDRIES BCDliteTM/BCD Roadmap
GLOBALFOUNDRIES 180nm BCDliteTM Platform
6V CMOS Baseline,
36KÅ TM (1P3M up to 6M)
Iso-body N/PLDMOS 40/50/65V
1.8V ULL and IC
Iso 30V BCDliteTM
BCDliteTM 65V
Option : HRES, MIM, Zener
Iso N/PLDMOS
10/12/16/20/24/ 30/35V
10V LDN/PMOS
Non-Iso 30V BCDliteTM
P-substrate
N-epi / P-substrate
Iso N/PLDMOS
10V
Non-Iso N/PLDMOS
30/35V
Low Ron NLDMOS
10/12/16/20/ 24/30/35V
10V LDN/PMOS
BCD
Iso N/PLDMOS
10/12/16/20/24/ 30/35V
Low Ron NLDMOS
10/12/16/20/ 24/30/35V
Nepi / NBL+Sinker
/ P-sub
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High Performance BCD (Low Rsp, High BVdss, Wide SOA)
GSA Seminar - Nov. 12, 2014 16
High Performance BCD
– Lowest Rsp LDMOS
– Large market capacity (~40V)
– Logic compatibility
– Variety of components
– Large logic contents (0.18um 0.13um)
– Optimized BV, Rsp, and SOA
Example
– BCD6, BCD8.. (STMicro)
– LBC5, LBC7, LBC8.. (TI)
– 180nm BCDlite, 130nm BCDlite , 65/55/40nm BCDlite (GLOBALFOUNDRIES)
LDMOS I-V Curve
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High Performance BCD
GSA Seminar - Nov. 12, 2014 17
• Voltage range from 80V to 300V
• 80V to 120V
- Automotive, telecommunication, hot
swap, PoE (Power over Ethernet), and
audio amplifier
• 120V to 300V
- Offline and display
- Solar power, LED driver
• SOI BCD
- Pro: Good isolation, low parasitics, ease of
high-side operation
- Cons: Expensive substrate
• Bulk BCD
- Pro: Cheap substrate
- Cons: Poor isolation (needs large isolation
area), High parasitics, difficult to build high-
side structure GLOBALFOUNDRIES 130nm BCDliteTM Platform
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High-Voltage 700V BCD
GSA Seminar - Nov. 12, 2014 18
Hotel Yas Abudabi
• AC/DC Converter, LED lighting, and Motor driver applications (IGBT driver, etc.)
are fast growing markets
• High-Voltage BCD (700V, 1200V) is required for this applications
• More functionality is being added to be “SMART”
GLOBALFOUNDRIES 180nm UHV Platform
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Thick Copper Routing
GSA Seminar - Nov. 12, 2014 19
• IR drop of thin Al metal routing causes high Ron – “de-biasing effect”
• Even thick Al, Ron increase with 30% at large LDMOS
• Thick Cu simply remove de-biasing effect by using low sheet resistance metal
• 10um thick Cu (2mohm/sq) vs. 3um Al (10mohm/sq)
Source: EEtimes, ‘Thick copper paves way for high-current
drive in high-voltage power Ics,’ 4/19/2011
Thick
Cu
Thick
Al
Thin
Al
Thickness
[um] 10 3 0.6
Rs
[ohm/sq.] ~2 10 60
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NVM (Non-Volatile Memory) in BCD Technology
GSA Seminar - Nov. 12, 2014 20
SST Super Flash EEPROM
• OTP or e-Fuse
- For trimming - 16bit/ 32bit/ 64bit are commonly used
• EEPROM & MTP
- Single-poly, No additional mask
- Support higher density (~10kbit) with multi-time programmability
• eFlash – Key requirements
- Higher endurance
- Higher densities (~Mbit)
- High Mask count (8~10 mask adder) is a big issue in power management applications
• GLOBALFOUNDRIES
- SST ESF-1 in the 130nm BCDliteTM technology with
4 additional layers
Endurance/Retention: >10K cycles, 10 years @ 850C
4 Mask adder on top of 130nm BCDliteTM (1.5V/5V/HV
process)
Trademark Attribution
GLOBALFOUNDRIES®, the GLOBALFOUNDRIES logo and combinations thereof, and GLOBALFOUNDRIES’ other trademarks and service marks are owned by GLOBALFOUNDRIES Inc. in the United States and/or other jurisdictions. All other brand names, product names, or trademarks belong to their respective owners and are used herein solely to identify the products and/or services offered by those trademark owners.
© 2013 GLOBALFOUNDRIES Inc. All rights reserved.
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