pjm nsa n-enhancement mode field effect transistor · 2020-02-12 · pjm138nsa n-enhancement mode...

1 / 6www.pingjingsemi.com Revision：2.0 Jan-2019

Features Low gate charge and RDS(ON)

Rugged and relaible

Application Direct logic-level interface: TTL/CMOS

Drivers: relays, solenoids, lamps, hammers,

Display, memories, transistors, etc.

Battery operated systems

Solid-state relays

SOT-23

Absolute Maximum Ratings (TA=25unless otherwise specified)

Schematic diagram

1. Gate 2.Source 3.DrainMarking: S3

Parameter Symbol Limit Unit

Drain-Source Voltage VDS 50 V

Gate-Source Voltage VGS ±20 V

Drain Current-Continuous ID 0.22 A

Maximum Power Dissipation PD 0.35 W

Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150

Thermal Resistance,Junction-to-Ambient RθJA 357 /W

Thermal Characteristics

PJM138NSAN- Enhancement Mode Field Effect Transistor

3.Drain

2.Source

1.Gate

2 / 6

Electrical Characteristics (TA=25 unless otherwise specified)

Parameter Symbol Test Condition Min. Typ. Max. Units

Static Characteristics

Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID=250µA 50 V

Drain to Source Leakage Current IDSSVDS =50V, VGS= 0V 0.5 µAVDS =30V, VGS= 0V 100 nA

Gate-body leakage current IGSS VGS =±20V,VDS = 0V ±10 µA

Gate threshold voltage Note1 VGS(th) VDS =VGS, ID =250µA 0.6 1 1.4 V

Drain-source on-resistance Note1 RDS(on)VGS =10V, ID =0.22A 1 3.5 Ω

VGS =4.5V, ID =0.22A 1.1 6 Ω

Forward tranconductance Note1 gFS VDS =10V, ID =0.22A 0.13 S

Dynamic characteristics

Input Capacitance Ciss

VDS =25V,VGS =0V,f=1MHz

26.5

pFOutput Capacitance Coss 12.9

Reverse Transfer Capacitance Crss 5.9

Switching Characteristics

Turn-on delay time td(on)

VGS=10V,VDD=30V,ID=0.29A ,RGEN =6Ω,

5

nsTurn-on rise time tr 18

Turn-off delay time td(off) 36

Turn-off fall time tf 14

Source-Drain Diode characteristics

Diode Forward voltage Note1 VSD VGS =0V, IS=0.44A 1.4 V

Notes :1. Pulse test : pulse width≤300μs, duty cycle≤2%.


www.pingjingsemi.com Revision：2.0 Jan-2019

3 / 6

Typical Characteristic Curves

D

S

SD

GS

D

GS

J

Dra

inC

urre

nt(m

A)

Output Characteristics500 400

Transfer Characteristics

400 320

300 240

200 160

100 80

00 1 2 3 4

00.8 1.2 1.6 2.0 2.4

Drain to Source Voltage V (V) Gate to Source Voltage V (V)

R1.5

DS(ON)——I DS(ON)5

——V

4

1.23

20.9

1

0.60.2 0.4 0.6 0.8

01 2 3 4 5

Drain Current I (A) Gate to Source Voltage V (V)

I ——V1

Threshold Voltage

1.2

0.1

1.0

0.010.8

1E-30.2 0.4 0.6 0.8 1.0 1.2 1.4

0.625 50 75 100 125

Source to Drain Voltage V (V) Juction Temperature T ()

Plused

T =125a

T =25a

Sour

ceC

urre

ntI(

A)S

Dra

in C

urre

nt I

(mA)

D

Ta=25

Plused

GS

V =10GS V

V =4.5V

a

T =25a

ID=500mA

Plused

T =125

(Ω)

DS(

ON

)O

n-R

esis

tanc

erR

V =1GS 0V

V =4GS V V =2

GSV

V =3VGS

Ta=25

Pl sed

V =3VDS

Plused

T =125a

Ta=25

SD

=250uAID

Thre

shol

dVo

ltage

V(V

)TH

DS

GSR

(Ω)

DS(

ON

)O

n-R

esis

tanc

erR



4 / 6

Package OutlineSOT-23

Ordering InformationDevice Package Shipping

PJM138NSA SOT-23 3000PCS/Reel&Tape

SymbolDimensions in millimeter

Min. Typ. Max.A 0.900 1.025 1.150

A1 0.000 0.050 0.100b 0.300 0.400 0.500c 0.080 0.115 0.150D 2.800 2.900 3.000

E 1.200 1.300 1.400HE 2.250 2.400 2.550e 1.800 1.900 2.000

L

0.550REFL1

0.300 0.500θ 0o 8o

1.0

0.8

2.2

1.9

1.0

0.8

SOT-23 (TO-236)

Recommended soldering pad





Conditions of Soldering and Storage

Recommended condition of reflow soldering

Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:

Time length of peak temperature (longer) Time length of soldering (longer) Thickness of solder paste (thicker)

Conditions of hand soldering

Temperature: 370 OC Time: 3s max. Times: one time

Storage conditions

Temperature5 to 40 OC

Humidity30 to 80% RH

Recommended periodOne year after manufacturing



Package Specifications

The method of packaging

SOT-23 (TO-236)

30,000 pcs per box10 reels per box

120,000 pcs per carton 4 boxes per carton

3,000 pcs per reel1

2

3

Embossed tape and reel data

1Pin N

4.0

4.08.

0

G

Symbol

B

Ø 54.5±0.2C

12.3±0.3D 9.6+2/-0.3T1 1.0±0.2T2 1.2±0.2N 3.15±0.1G 1.25±0.1

AValue (unit: mm)

EF

Ø 177.8±12.7±0.2

Ø 13.5±0.2 Reel (7'')

Tape (8mm)

435

220

435

210

195

210

A

B

C

E

F

T1

D

T2

Cover Tape

Carrier Tape

pjm nsa n-enhancement mode field effect transistor · 2020-02-12 · pjm138nsa n-enhancement mode...

Documents