novel memory technologies - a seminar report by nishit chittora and akshay nigam

8/6/2019 Novel Memory Technologies - A Seminar Report by Nishit Chittora and Akshay Nigam

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Geetanjali Institute of Technical Studies, Udaipur

Technical Seminar

on

NOVEL MEMORY TECHNOLOGY

Session 2010-2011

Submitted to:

ECE DepartmentPresented by:

Nishit Chittora,

Akshay Nigam,

Pankaj Chaudhary28-05-2011 Novel Memory Technology 1

28-05-2011 Novel Memory Technology 2

Road Map :

Memory

Data Storage Method

Semiconductor Memory

Role of memory

Role of memory during boot up

Classification of Semiconductor memory

Volatile Memory

Novel memory

Under development

History

Non Volatile memory

Novel memory

Under development

History


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Memory:

# Data storage device

A storage device may hold information

process information, or both.

# Electronic data storage

It is storage which requires electrical

power to store and retrieve that data.

# Electromagnetic data

Data may be in Analog or digital form.

Electronically coded data.

DevicesRecording: Hands , mouths , musical instruments or any type of medium.

Intermediates : eyes, ears, cameras, scanners, microphones, speakers, monitors,

video projectors)

Storage: All kind of memory technologies


Data storage method:

Portable: easily replaced

Ex: Flat surface, Printmaking, PhotographicFabrication, Automated assembly, Solid freeform fabrication, Cylindrical accessing, Memory card reader/drive

Tape drive, Mono reel or reel-to-reel, Compact Cassette player/recorder

Semi Portable: methods requiring mechanical disassembly tools and/or opening a chassis.

Ex: Hard disk driveCircuitry with non-volatile RAM

Inseparable Method: meaning loss of memory if disconnected from the unit.

Ex: Circuitry with volatile RAMNeurons



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Semiconductor Memory:

Electronic data storage device.

Used in Computer memory.

implemented on a semiconductor based integrated circuit.

Technical Characteristics

Capacity

Access time

Cycle time

Throughput

Non volatilityThe ideal memory has a large capacity with restricted access time and

cycle time, a high throughput and is non volatile.


All actual computing starts with the CPU(Central Processing Unit).

The chipset supports the CPU and containsseveral controllers that control howinformation travels between the CPU andother components in the PC.

The memory controller is part of thechipset and establishes the informationflow between memory and the CPU.

A bus is a data path that consists of parallelwires and connects the CPU, memory andother devices. The bus architecturedetermines how much and how fast datacan move around the motherboard.

The memory bus goes from the memorycontroller to the computer's memory sockets.Newer systems have a front side bus (FSB)from the CPU to main memory and abackside bus (BSB) from the memorycontroller to L2 cache.


Role of memory:


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Role of memory during Boot Up

Turn On Computer

File saved to astorage device

Load Data from RAM

POST operation

Load OS form HDD to

System RAM

Files of

applicationloaded to

RAM

Load basic BIOS from ROM

the application are

purged from RAM.Save &close file

Application

open : Load to

RAM


Classification of Semiconductor Memories



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DRAM (DDRSDRAM)

Double data rate synchronous dynamic random access memory

Dynamic random-access memory

Random access memory

Each bit is stored on separate capacitor on

integrated ckt.


TypesDouble Data Rate

DDR 1

DDR 2

DDR 3

SRAM

Static random access memory

does not need to be periodically refreshed

uses bi stable latching circuitry to store each bit.

exhibits data remanence principle.

Types

Non volatile SRAM

By transistor type

By function

i) Asynchronous independent of clock frequency;

ii) Synchronous all timings are initiated by the clock edge



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SRAM Operation:

There are 3 modes of operation

Standby

Writing

Writing

Bus behaviour


History of Volatile memory technology

Delay line memory

Selectron tube

Williams tube



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early form of digital computer memory

the first random access digital storage device

Selectron Tube

Williams tube


Delay line memory was a form of computer memory used on

some of the earliest digital computers.

Delay line memory was a refreshable memory, but as opposed

to modern random-access memory, it was used as a serial-

access.



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TRAM (Developed by T RAM Semiconductor )

Thyristor RAM

New type of DRAM

Combines the strengths of the DRAM and SRAM: high speed and high volume

Based on principle ofNegative differential resistance and

is called thin capacitive coupled thyristor, is used to create memory cells capable

of very high packing densities.

highly scalable

Storage density that is several times higher than found in conventional

six transistor SRAM memory.

Next generation of T RAM memory will have the same density as DRAM.


TT-RAM

Twin Transistor RAM

Conventional one transistor, one

capacitor DRAM in concept.

Eliminates the capacitor by relying on

the floating body effect

TTRAM offers somewhat higher densities

than conventional DRAM.



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ZRAM: Zero Capacitor RAM

Novel DRAM computer memory technology

developed by Innovative Silicon

Based on floating body effect of silicon on insulator.

Silicon claims the technology offers memory access

speeds similar to the standard

Six transistor SRAM cell used in cache memory but

uses only a single transistor, therefore affording

much higher packing densities.



Non volatile memory:

It is computer memory that can retain the stored

information even when not powered


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Non Volatile memory : Novel Memory Technologies

PROM

EPROM

EEPROM

FLASH MEMORY

Fe RAM

MRAM

PRAM

Non Volatile memory: Under Development

CB RAM SONOS

RRAM

RACETRACK MEMORY

NRAM

MILIPEDE


ROM: Read only Memory

PROM :Programmable ROM

Data stored in ROM cannot be modified, or can be modified only slowly or with difficulty

A programmable read-only memory (PROM) or field programmable read-only memory

(FPROM) or one-time programmable non-volatile memory(OTP NVM)



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EPROMErasable programmable read only memory

Memory chip that retains its data when its power supply

is switched off.

array of floating gate transistors individually programmed by

an electronic device that supplies higher voltages than those normally

used in digital circuits.

EPROM can be erased by exposing it to strong ultraviolet light from a

mercury vapour light source.

the transparent fused quartz window in the top, through which the silicon

chip is visible, and which permits exposure to UV light during erasing.


EEPROMElectricallyErasable Programmable Read Only Memory

Non Volatile memory

Used to store small amounts of data that must be saved when power

is removed.

User modifiable read only memory (erased and reprogrammed

repeatedly)

Earlier EEPROM has a limited life : to tens or hundreds

Now extended to millions of times.


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Flash Memory

Non volatile computer storage chip

Can be electrically erased and reprogrammed.

Memory cards, USB flash drives, MP3 players and solid state drives.

Specific type of EEPROM that is erased and programmed in large blocks;

in early flash the entire chip had to be erased at once.

Non volatile, meaning no power is needed to maintain the information stored in the

chip.

In addition, flash memory offers

fast read access times and

better kinetic shock resistancethan hard disks.


Comparison with EPROM and EEPROM/Flash

The difference between EPROM and EEPROM lies in the way that thememory programs and erases. EEPROM can be programmed anderased electrically using field electron emission (more commonly knownin the industry as "FowlerNordheim tunneling").

EPROMs can't be erased electrically, and are programmed via hot carrierinjection onto the floating gate. Erase is via an ultraviolet light source.

Although in practice many EPROMs are encapsulated in plastic that isopaque to UV light, and are "one-time programmable".

Most NOR Flash memory is a hybrid style programming isthrough hot carrier injection and erase is through FowlerNordheimtunneling.


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Fe RAM

Ferro electric RAM

Random access memory

Similar in construction to DRAM but uses a erroelectric layer

instead of a dielectric layer to achieve non volatility.

Same functionality as Flash memory.

Fe RAM advantages over Flash include:

i) lower power usage,

ii) faster write performance

iii) much greater maximum number

of write erase cycles.

Fe RAM disadvantages against flash are:

i)Much lower storage densities

ii) storage capacity limitations

iii)higher cost.


SONOS, short for "Silicon-Oxide-Nitride-Oxide-Silicon", is a type of non-volatilecomputer memory closely related to Flash RAM.It is distinguished from mainstream flash by theuse of silicon nitride (Si3N4) instead ofpolysilicon for the charge storage material. SONOS promises lower programming

voltages and higher program/erase cycleendurance than polysilicon-based flash, and isan area of active research and developmenteffort

A SONOS memory array is constructed byfabricating a grid of SONOS transistors whichare connected by horizontal and vertical controllines (wordlines and bitlines) to peripheral circuitry such asaddress decoders and sense amplifiers.


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nonvolatile random access memory, is a newmemory storage technology

NRAMs are built by depositing masses ofnanotubes on a pre-fabricated chipcontaining rows of bar-shaped electrodeswith the slightly taller insulating layersbetween them.

NRAM will operate electromechanicallyrather than just electrically, setting it apartfrom other memory technologies as a non-volatile form of memory, meaning data willbe retained even when the power is turnedoff.


Millipede is a non-volatile computer memorystored on nanoscopic pits burned into thesurface of a thin polymer layer, read andwritten by a MEMS-based probe.

It promises a data density of more than 1terabit per square inch (1 gigabit per square

millimeter), about 4 times the density ofmagnetic storage available.

Millipede storage technology is beingpursued as a potential replacement formagnetic recording in hard drives, at thesame time reducing the form-factor to that offlash media


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Racetrack memory is an experimentalnon volatile memory device underdevelopment at IBM's Alma denResearch Centre .

A racetrack memory device is made upof many such wires and read/writeelements.

As current is passed through the wire, the

domains pass by magnetic read/writeheads positioned near the wire, whichalter the domains to record patterns ofbits.


Non Volatile Memory: Historical Memories


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Drum memory is a magnetic data

storage device.

An early form of computer

memory with data and programs

being loaded on to or off the drum

using media such as paper tape or

punched cards.

A drum is a large metal cylinder

that is coated on the outside surface

with a ferromagnetic recordingmaterial.

DRUM MEMORY


Magnetic-core memory is an early form ofrandom-access computer memory. It uses tiny magnetic rings, the cores, through whichwires are threaded to write and read information. Each core represents one bit of information. Thecores can be magnetically polarized in two different

ways and the bit stored in a core is zero or onedepending on that core's polarity. The wires are arranged to allow an individualcore to be set to either polarity, and for its polarityto be sensed, by sending appropriate current pulsesthrough selected wires

Magnetic Core Memory


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Bubble memory is a type of non-volatilecomputer memory that uses a thin film of amagnetic material to hold small magnetizedareas, known as bubbles or domains, each ofwhich stores one bit of data.

The bubble logic would use nanotechnologyand has been demonstrated to have accesstimes of 7 ms, which is faster than the 10 msaccess times that present hard drives have,though it is slower than the access time oftraditional RAM and of traditional logiccircuits, making the proposal notcommercially practical at present


THANK YOU


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novel memory technologies - a seminar report by nishit chittora and akshay nigam

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