noise reduction of si x ge 1-x and si x ge 1-x o y bolometers by forming gas passivation

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Noise Reduction Of Si x Ge 1-x and Si x Ge 1- x O y Bolometers by Forming Gas Passivation Mukti Rana and Donald Butler University of Texas at Arlington Electrical Engineering Dept. Arlington, TX 76019 Based in part by work supported by the National Science Foundation ECS-0322900

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Noise Reduction Of Si x Ge 1-x and Si x Ge 1-x O y Bolometers by Forming Gas Passivation. Mukti Rana and Donald Butler University of Texas at Arlington Electrical Engineering Dept. Arlington, TX 76019 Based in part by work supported by the National Science Foundation ECS-0322900. - PowerPoint PPT Presentation

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Page 1: Noise Reduction Of Si x Ge 1-x and Si x Ge 1-x O y Bolometers by Forming Gas Passivation

Noise Reduction Of SixGe1-x and SixGe1-xOy Bolometers by Forming Gas Passivation

Mukti Rana and Donald Butler

University of Texas at Arlington

Electrical Engineering Dept.

Arlington, TX 76019

Based in part by work supported by the National Science Foundation

ECS-0322900

http://www.uta.edu/

Page 2: Noise Reduction Of Si x Ge 1-x and Si x Ge 1-x O y Bolometers by Forming Gas Passivation

Bolometer

• Bolometers are the optical sensors whose resistivity varies with temperature. When lights fall on the bolometer surface the sensing material of the bolometer absorbs heat and there by changes it’s resistance.

http://www.uta.edu/

Page 3: Noise Reduction Of Si x Ge 1-x and Si x Ge 1-x O y Bolometers by Forming Gas Passivation

Why Noise Reduction is important

• Noise detoriates the Bolometer’s performance by reducing the detectivity, responsivity.

• Amorphous films are characterized by higher noise.

http://www.uta.edu/

Page 4: Noise Reduction Of Si x Ge 1-x and Si x Ge 1-x O y Bolometers by Forming Gas Passivation

Bolometer Fabrication

p-Si Substrate

Ni PadAl Mirror

SiN Insulation Layer

PI 2737 Sacrificial Layer

Ni ContactSiN NiCr ArmSiGeO

NiCr AbsorberSiN

Ashing of PI2737 in Oxygen Plasma

http://www.uta.edu/

Page 5: Noise Reduction Of Si x Ge 1-x and Si x Ge 1-x O y Bolometers by Forming Gas Passivation

Micormacined Bolometer : SEM Picture

http://www.uta.edu/

Page 6: Noise Reduction Of Si x Ge 1-x and Si x Ge 1-x O y Bolometers by Forming Gas Passivation

Experimental Details of Forming Gas Passivation

• The Bolometer’s noise was measured in a shielded probe station with the help of SRC560 low noise preamplifier, HP 3562 dynamic signal analyzer and a computer. The noise spectra of same device was measured before and after the passivation to compare the noise.

• An AXIC Jet First Rapid Thermal Anneal (RTA) was used for annealing the sample. The sample was kept inside the chamber at a forming gas flow of 500 SCCM for different intervals of time.

http://www.uta.edu/

Page 7: Noise Reduction Of Si x Ge 1-x and Si x Ge 1-x O y Bolometers by Forming Gas Passivation

Results: Noise Voltage Power Spectral Density (PSD) at 0.6uA Bias Current of SiGeO Bolometer Before and After Forming Gas Passivation

10-16

10-15

10-14

10-13

10-12

10-11

10-10

10-9

1 10 100 1000 104

Before PassivationAfter 2 Hours PassivationAfter 3 Hours PassivationAfter 4Hours PassivationAfter 8 Hours Passivation

Noi

se V

olta

ge P

SD [V

2 /Hz]

Frequency [Hz]

http://www.uta.edu/

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