noise reduction of si x ge 1-x and si x ge 1-x o y bolometers by forming gas passivation

7

Noise Reduction Of Si x Ge 1-x and Si x Ge 1- x O y Bolometers by Forming Gas Passivation Mukti Rana and Donald Butler University of Texas at Arlington Electrical Engineering Dept. Arlington, TX 76019 Based in part by work supported by the National Science Foundation ECS-0322900

Upload: gore

Post on 22-Feb-2016

27 views

Category:

Documents

0 download

Report

Download

Embed Size (px):

DESCRIPTION

Noise Reduction Of Si x Ge 1-x and Si x Ge 1-x O y Bolometers by Forming Gas Passivation. Mukti Rana and Donald Butler University of Texas at Arlington Electrical Engineering Dept. Arlington, TX 76019 Based in part by work supported by the National Science Foundation ECS-0322900. - PowerPoint PPT Presentation

TRANSCRIPT

Page 1: Noise Reduction Of Si x Ge 1-x and Si x Ge 1-x O y Bolometers by Forming Gas Passivation

Noise Reduction Of SixGe1-x and SixGe1-xOy Bolometers by Forming Gas Passivation

Mukti Rana and Donald Butler

University of Texas at Arlington

Electrical Engineering Dept.

Arlington, TX 76019

Based in part by work supported by the National Science Foundation

ECS-0322900

http://www.uta.edu/

Page 2: Noise Reduction Of Si x Ge 1-x and Si x Ge 1-x O y Bolometers by Forming Gas Passivation

Bolometer

• Bolometers are the optical sensors whose resistivity varies with temperature. When lights fall on the bolometer surface the sensing material of the bolometer absorbs heat and there by changes it’s resistance.

http://www.uta.edu/

Page 3: Noise Reduction Of Si x Ge 1-x and Si x Ge 1-x O y Bolometers by Forming Gas Passivation

Why Noise Reduction is important

• Noise detoriates the Bolometer’s performance by reducing the detectivity, responsivity.

• Amorphous films are characterized by higher noise.

http://www.uta.edu/

Page 4: Noise Reduction Of Si x Ge 1-x and Si x Ge 1-x O y Bolometers by Forming Gas Passivation

Bolometer Fabrication

p-Si Substrate

Ni PadAl Mirror

SiN Insulation Layer

PI 2737 Sacrificial Layer

Ni ContactSiN NiCr ArmSiGeO

NiCr AbsorberSiN

Ashing of PI2737 in Oxygen Plasma

http://www.uta.edu/

Page 5: Noise Reduction Of Si x Ge 1-x and Si x Ge 1-x O y Bolometers by Forming Gas Passivation

Micormacined Bolometer : SEM Picture

http://www.uta.edu/

Page 6: Noise Reduction Of Si x Ge 1-x and Si x Ge 1-x O y Bolometers by Forming Gas Passivation

Experimental Details of Forming Gas Passivation

• The Bolometer’s noise was measured in a shielded probe station with the help of SRC560 low noise preamplifier, HP 3562 dynamic signal analyzer and a computer. The noise spectra of same device was measured before and after the passivation to compare the noise.

• An AXIC Jet First Rapid Thermal Anneal (RTA) was used for annealing the sample. The sample was kept inside the chamber at a forming gas flow of 500 SCCM for different intervals of time.

http://www.uta.edu/

Page 7: Noise Reduction Of Si x Ge 1-x and Si x Ge 1-x O y Bolometers by Forming Gas Passivation

Results: Noise Voltage Power Spectral Density (PSD) at 0.6uA Bias Current of SiGeO Bolometer Before and After Forming Gas Passivation

10-16

10-15

10-14

10-13

10-12

10-11

10-10

10-9

1 10 100 1000 104

Before PassivationAfter 2 Hours PassivationAfter 3 Hours PassivationAfter 4Hours PassivationAfter 8 Hours Passivation

Noi

se V

olta

ge P

SD [V

2 /Hz]

Frequency [Hz]

http://www.uta.edu/

Sixth GE SI Edition MECHANICS OF MATERIALScae.seoultech.ac.kr/mat/4_Bending.pdf1 MECHANICS OF MATERIALS Sixth GE SI Edition Ferdinand P. Beer E. Russell Johnston, Jr. John T. DeWolf

CHAPTER2 Growth of the SiGe and Ge epitaxial layers on Si ... · Ge layer was additionally evaluated by the double-crystal x-ray diffraction (DCXD) measurement. 2-3 Characteristics

A COMPUTATIONAL THERMODYNAMIC MODEL OF AL- AU-GE-SI

Inorganic Group 14 C,Si,Ge,Sn,Tb

Group 14 C,Si,Ge,Sn,Pb

Synthesis of ultra-small Si/Ge semiconductor nano

Si x Ge 1-x and Si x Ge 1-x O y Films as a Thermal Sensing Material Mukti Rana and Donald Butler University of Texas at Arlington Electrical Engineering

Introductioneprints.soton.ac.uk/378979/1/Ge-on-Si%20Plasma%20Enhanced... · Web viewCrystalline and poly-crystalline Ge-on-Si has many applications in the fields of complementary

High-speed GaAs metal gate semiconductor field effect ... · High-speed GaAs metal gate semiconductor field effect transistor structure grown on a composite Ge Ge x Si 1 x Si substrate

Mobil DTE 800 Series - 4.imimg.com · Mobil DTE 800 Series ... GE GEK 28143A X X Solar ES 9-224, Class II X X GE GEK 32568-E/F X GE GEK 101941-A X GE GEK 107395 X Alstom Power Sweden

Quantum confinement in Si and Ge nanostructures: Theory ...lgonchar/research/publications/...APPLIED PHYSICS REVIEWS Quantum confinement in Si and Ge nanostructures: Theory and experiment

2006 Fall MRS Presentation: "Gas Cluster Ge Infusion for Si(1-x)Ge(x) Strained-Layer Applications"

Propriedades de transporte nos compostos de Ho 5 (Si x Ge 1-x ) 4 Apresentado por: Ricardo Peixoto Co-autores: J.P. Araújo, A.M.Pereira, M.E.Braga and

Calculation of Electronic Structure and Thermoelectric ...electronic properties at high temperatures. Ge (1-x) Si x alloys have attracted research attention as promising materials

Final Technical Report - Defense Technical Information Center · multi-quantum well lasers, photodetectors, emitters and modulators grown on Sn 1-x Ge x and Ge 1-x-y Si x Sn y buffered

Very large photoresponsiviy and high photocurrent ...€¦ · 1. Introduction . Recent progress in Si photonics technology including Ge/GeSn lasers [], Si/Ge modulators 1 [2], Ge/SOI

Si Harry P Dirigiera GE Revpdf

Lista sept 2018 - hotwax.dinstudio.se · 56 si x Elvis Cant help falling in love Rca PPBO 4112 GE Oldies but Goldies Sobc EX 25 57 si x Elvis Are you lonesome tonight Rca 7810 GE

Noise Reduction Of Si x Ge 1-x and Si x Ge 1-x O y Bolometers by Forming Gas Passivation

Study of the opto-electronic properties of Cu ZnXS (X=Sn,Ge [email protected] Study of the opto-electronic properties of Cu 2ZnXS 4 (X=Sn,Ge,Si) kesterites as input data

ferromagnetic semiconductors Electronic Supporting ... · CrXTe3 (X= Si, Ge) nanosheets: two dimensional intrinsic ferromagnetic semiconductors Xingxing Lia and Jinlong Yang*ab aHefei

HETEROEPITAXIAL GROWTH OF VACUUM-EVAPORATED Si-Ge

Composition and microhardness of Si–Ge solid solution ...lregel/alsig2.pdfage HK of the mixture of the solid solution matrix (Si and Ge in Al) and the solid solution (Al in Si–Ge)

NOR THWESTERN UNIVERSITY Gro Si/Ge

Si passivation for Ge pMOSFETs: Impact of Si cap growth ... · Atomika detectors) have then been calibrated with RBS by growing different Si caps on 200 nm Ge CMPed substrates. The

and phase transformations: Application to Si and Ge

Low Power Band to Band Tunnel Transistors …...1-x Ge x based heterostructures can provide ultra low effective band gaps. Strain is used to engineer complimentary Si 1-x Ge x heterostructures

Si x Ge 1-x and Si x Ge 1-x O y Films as a Thermal Sensing Material

Light absorption in Si or Ge nanostructures - GADEST2013

Electronic Devices: Transistors in Si, SiGe, Ge, III-Vs ... · PDF fileElectronic Devices: Transistors in Si, SiGe, Ge, ... CMOS Devices and Integrated Circuits ... Figure 1 shows

Growth of Germanium, Silicon, and Ge–Si Heterostructured ...iebl.ucsd.edu/sites/iebl.ucsd.edu/files/2017-05/VLS-Growth.pdf26 Growth of Germanium, Silicon, and Ge–Si Heterostructured

Helical Hole State in Multiple Conduction Modes in Ge/Si ...cml.harvard.edu/...in...Ge_Si-Core_Shell-Nanowire.pdfHelical Hole State in Multiple Conduction Modes in Ge/Si Core/Shell

Hole spin relaxation in Ge-Si core-shell nanowire qubitscmliris.harvard.edu/assets/NNano7-47_YHu20121.pdf · Hole spin relaxation in Ge–Si core–shell nanowire qubits Yongjie Hu

GE Healthcare XR X-ray