Nilton Morimoto

General Manager: Jacobus Swart

The Millennium Institute Program and Projects

SCMN

NAMITEC

General overview

MEMS Activities

Micromachining techniques

MEMS device development

Irrigation control system

Concluding remarks

•2001 – 2005: SCMN - Research Network on System-on-Chip,

Microsystems and Nanoelectronics•17 projects / all fields

•2005 – 2008:NAMITEC - MIcro and NAnoelectronics TEChnologies for Intelligent Integrated

Systems -•34 projects / all fields•Value: R$ 4.540.000,00 (~US$ 2.7 million)

São Paulo

Porto Alegre

Florianópolis

Campinas

Recife

Brasília

Rio de JaneiroSão Carlos• 59 PhD researchers• 11 groups/departments• 8 institutions• 8 cities• 6 states

SCMN (2002-2005):

São Paulo

Porto Alegre

Florianópolis

Campinas

Recife

Brasília

Rio de Janeiro

Campina G.

São Luiz

Belo Horizonte

NAMITEC (2005-2008):

• 93 PhD researchers• 28 groups/departments• 18 institutions• 12 cities• 10 states

São Carlos

Natal

NAMITEC – Objectives:NAMITEC – Objectives:SoC and sensor networkmethodologies and tools for the design and

test of low-power and fault-tolerant integrated circuits, including analog, RF and digital circuits

micro- and nanoelectronic devices, photonic and optoelectronic devices, MEMS and NEMS, and their integration and packaging processes

micro- and nanofabrication materials and techniques, required for the manufacturing of integrated devices and circuits

Goals:Goals:1) Systems on chip:

i) To develop a design platform for systems on chip.

ii) To develop architectures of systems on chip.

iii) To develop an environment for SoC applications.

iv) To develop test methodologies, including design aimed at testability, CAD, test techniques.

v) Construction of a reconfigurable System on Chip.

vi) Demonstration of a pilot unit of a system of precision irrigation control based on SoC, developed within the SCMN (our previous Millennium project).

vii) Demonstration of pilot units of the system for monitoring and scanning of animals and fruit plants.

viii) Demonstration for the system of water quality monitoring.

2) Circuits and tools for physical synthesis:

i)   To develop new analog, RF and digital circuits.

ii)   To develop new tools for automatic physical synthesis.

iii) To develop methodologies for physical synthesis of

digital circuits, which do not depend on the use of cell

libraries, allowing for a real logic circuit minimization.

iv) To develop new fault tolerant circuits.

3) Electronic and photonic devices and MEMS/NEMS:

i)        To develop FinFET/SOI transistors .

ii)        To develop CNT based devices: transistor e gas sensor.

iii)     To develop optoelectronic and photonic devices.

iv)    MEMS/NEMS devices.

v) Organic devices.

4) Materials and techniques of micro and nanofabrication:

i)  Nanofabrication techniques: electron beam lithography, lithography

by AFM, nanofabrication by FIB, plasma etching. Development of

advanced nanofabrication techniques.

ii)   Synthesis of CNT: Development and modeling of new processes of

aligned CNT growth for applications in electronics and chemical

sensors.

iii) Synthesis of Nanofibers: Development of electrochemical process

of metal nanofiber synthesis for applications in chemical sensors.

Development of the electrospinning process for synthesis of

polymeric nanofibers for applications in chemical sensors.

      iv) Synthesis of Si and Ge nanoparticles. Development of the

nanoparticles growth processes aiming at their applications in

optoelectronics and for charge storage (memory).

     v) High k dielectrics. Development of the processes of growth and

characterization for new high k dielectrics, required for sub 100 nm

transistors, among them: compounds such as HfSiON, HfAlO,

AlNO, oxynitrides of Si with metals. Study of the MOS systems

thermal stability.

vi) Processes of thin and ultrathin films growth: Si-poly, TiN,

Cu, silicides, dielectrics, and polymers. Microchemical and

morphological characterization of thin films; detection,

characterization, creation, elimination and applications of electrical

domains in isolators.

IC Design:IC Design:

EMC

RF Blocks

Front-end of reconfigurable radio

Amplifier for Bio-potentials

New APS structures

R.H. APS CellAPS Matrix

High-k Requirements (Thermodynamics and Stability)

Preserve capacitance of gate after the processing

After sintering 450oC/30min

Ti (from electrode) incorporated at the

SiON film

B (from substrate) incorporated at the SiON

film and the Al/Ti electrode

Source: Diniz

Carbon NanotubesCarbon Nanotubes Plasma Deposition

Photonic and Electronic Application of Carbon Nanotubes Deposition of Nanostructured Carbon Thin films Photonic and Electronic Application of Nanostructured

Carbon Thin films

04/18/23Centro de Componentes Semicondutores – UNICAMP (www.ccs.unicamp.br) 16

CNTs for interconnects•MWNTs: controlled deposition between metal electrodes from solutions using ac di-electrophoresis; •2 and 4 points measurements using FIB: Resistance MWNTs produced by CVD at T~900C (10 k/m) is too high for interconnection applications;

VI I1 32 4

4-points, side-contacted MWNTFIB ID Pt FEB ID Pt

FinFETs

Microsquids

Nanostructures by e-beam lithography

Nanostructures by e-beam lithography

50nm x 10m lines

4

123

-300 -200 -100 0 100 200 3001.170

1.175

1.180

1.185

1.190

1.195

H (Oe)

I (V

)

-300 -200 -100 0 100 200 300

1.270

1.275

1.280

1.285

1.290

H (Oe)

I (V

)

-300 -200 -100 0 100 200 300

1.295

1.300

1.305

1.310

1.315

H (Oe)

I (V

)

-300 -200 -100 0 100 200 3000.805

0.810

0.815

0.820

0.825

0.830

H (Oe)

I (V

)

-300 -200 -100 0 100 200 300

0.955

0.960

0.965

0.970

0.975

H (Oe)

I (V

)

-300 -200 -100 0 100 200 3001.340

1.345

1.350

1.355

1.360

1.365

H (Oe)

I (V

)

-300 -200 -100 0 100 200 300

1.345

1.350

1.355

1.360

1.365

H = 14 Oe

H (Oe)

I (V

)

-300 -200 -100 0 100 200 300

1.340

1.345

1.350

1.355

1.360

1.365

H = 14 Oe

H (Oe)

I (V

)

-300 -200 -100 0 100 200 300

1.040

1.045

1.050

1.055

1.060

H = 15 Oe

H (Oe)

I (V

)

-300 -200 -100 0 100 200 3001.245

1.250

1.255

1.260

1.265

1.270

H = 12 Oe

H (Oe)

I (V

)

-300 -200 -100 0 100 200 300

1.330

1.335

1.340

1.345

1.350

H = 12 Oe

H (Oe)

I (V

)

-300 -200 -100 0 100 200 300

1.300

1.305

1.310

1.315

1.320

H (Oe)

I (V

)

56

789

101112

Loops de histerese locais obtidos por SNOMem partículas de 0,5µm a 16µm

Nanomagnetic structures

Graphene on SiliconFonte: Science, 2008

Nanoelectronic Devices on Graphene

Electronic Transport

Nanostructures by e-beam lithography

MEMS DevicesPressure sensorsGlucose sensorElectrochemical sensorGas sensorsGas flow sensorBolometer – IR detectionTHz Resonant filters

Piezo-resistive Pressure sensors

= 0.32xPD + 38.9

38

39

40

41

42

43

-1 1 3 5 7 9 11

Differential Pressure PD [psi]

Ou

tpu

t V

olt

age

no [

mV

]

-0,6

-0,4

-0,2

0

0,2

0,4

0,6

0,8

No

n-L

inea

rity

[%

]

Experimental

Nonlinearity

Curve Fit

Sensitivity: 0.34 mV/psi

PiezoMOS Pressure sensor

Sensitivity: 9 mV/psiPower consumption: 3 W.

o = 8.9xPD + 601

580

600

620

640

660

680

700

-1 1 3 5 7 9 11

Differential pressure PD [psi]

Out

put v

olta

ge

o [m

V]

-1,5

-1

-0,5

0

0,5

1

1,5

Non

linea

rity

[%]

ExperimentalNonlinearityCurve Fit

Piezoresistive Pressure sensor(LSI/Namitec and HCA/Pipe Fapesp)

Nipple Microsensor

(stainless steel AISI 316)

Die sensor

Cell

Feed through (nipple)

chip dimensions: (15.000 x 1.200) m x m.

Microsensor mounted over the cell

PackagingComplete Pressure

sensor

Pressure Cell

Nipple Cell over nipple

Wireless Transceiver to pressure sensor

Bio-chemical NO sensor in vivo measurement

Integrated System for water quality control using microsensors and LTCC technology

Gas Flow Sensor

Al

Si

SiO2

B-doped Si

•Microheater : poly-si p type;

• 0.5 x 20 x 200m;

•Flow with controlled temperature

•Circuits for interface and conditioning

At T= 27 ºC: • R = 401,92 • TCR = 1.50 ppm/ºC

P-doped poly-Si

heater

+ + ++ +

Glucose SensorGlucose Sensor

Biosensor StructureBiosensor Structure

Sistema de eletrodos (trabalho, referência e auxiliar) sem modificação. Magnificação de 500x.

Rattus norvergicus

Glucose Sensor x Destro (continuous test)Glucose Sensor x Destro (continuous test)

Polimeric nanofibers Polimeric nanofibers recovered by electroless recovered by electroless depositiondeposition

Without metal depositionWithout metal deposition

With metal depositionWith metal deposition

The non-woven fabrics obtained in the electrospun process:

The obtained material of fibers is recovered by metal by electroless process in order to obtain a substrate sensible and or selective for gas sensors applications

May be used as an electrode in a dye based photovoltaic cell

May be used as a layer in a preconcentrator structure

To obtain metallic tubes in nanometric range

With metal depositionWith metal deposition

Hidrogen Nanosensors Polymeric nanofibers

Hydrogen sensitive layer

Ceramic templates for nanorods

SAW Sensor – for gas detection

Colpitts type oscillator – one port SAW resonator

C

CC1C=0.8 pF

pb_nec_NE68019_19960501Q3R

RbR=34800 Ohm

RReR=360 Ohm

RRcR=36 Ohm

LL1

R=L=18 nH

CC2C=18 pF

V_DCSRC2Vdc=12 V

V_DCSRC1Vdc=12 V

C0C=1.8 pF

PortoutputNum=1

DC_BlockDC_Block3

DC_BlockDC_Block2

DC_BlockDC_Block1

SAW

GND

433MHz

SAW:Quartz - Cut = ST-XFrequency = 433 MHz = 7.3 mAl fingers, t = 250 nmW = d = 1.82 m

Sensitive layer:Thin film of TiO2

Thickness: 25 to 100 nm

Bolometer – suspended poly-Si resistor with gold-black absorber

Fabrication

Gold-Black Layer

Suspended Membrane

FabricationPoly-Si

Gold-Black

Ti-Au

• EM design• Thin and thick (soft) lithography capabilities to achieve substrate and substrate-less

structures for RF filtering.

Irrigation Control SystemGeneral architecture

Sensor selection

Hybrid system demonstration

Design of a SoC.

System on Chip:SoC Integration

Integrated SoC Layout and Picture

Microsystems on a PackageProcess intensifiers: Microfluidic Devices for

Nanoparticle Generation/Encapsulation

Microsystems on a Package

Micro-Analytical SystemsContaminants in Water (Heavy Metals,

Phosphates, etc.)

Pb ++

NAMITEC - Summary Increased number of institutions and membersIncreased interdisciplinarityIncreasing cooperation with other institutions &

companies Innovation in many issuesMany students involved (under & graduate & pos-doc)Teaching of microtechnologiesImproved installationsSocial, economical and environmental important

applications: irrigation control system, sensor networks, etc.

Importance of the field for Brazilian industrial policy – priority for semiconductors.

Acknowledgments:MCT/CNPq for financial support

To all NAMITEC members for the results

Contacts:Jacobus@fee.unicamp.brhttp://www.ccs.unicamp.br/namitec

Conference announcements:

THE END/FIM