nce n-channel enhancement mode power mosfet · ds=v gs,i d=-250μa -0.7 -1 -1.3 v v gs=-10v, i...
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P-Channel Enhancement Mode Power MOSFET
Description The PE3115 uses advanced trench technology to provide
excellent RDS(ON)
General Features VDS = -30V,ID = -5.5A
RDS(ON) < 31mΩ @ VGS=-4.5V RDS(ON) < 27mΩ @ VGS=-10V
High power and current handing capability
Lead free product is acquired
Surface mount package
Application PWM applications
Load switch
Power management
D
G
S
Schematic diagram
Marking and Pin Assignment
SOT-23-3L
Absolute Maximum Ratings (TA=25
Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±12 V
Drain Current-Continuous ID -5.5 A
Drain Current-Pulsed (Note 1) IDM -30 A
Maximum Power Dissipation PD 1.5 W
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150
Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 100 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -30 - V
Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V - - -1 μA
PE3115
unless otherwise noted)
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3115
is suitable for use as a voltage. This device
applications.
-
, low gate charge and to operate at low gate
load switch or in
PWM
RDS(ON) < 42mΩ @ VGS=-2.5V
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Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V - - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -0.7 -1 -1.3 V
VGS=-10V, ID=-4.2A - 22 27 mΩ
VGS=-4.5V, ID=-4A - 25 31 mΩDrain-Source On-State Resistance RDS(ON)
Forward Transconductance gFS VDS=-5V,ID=-4.2A - 10 - S
Dynamic Characteristics (Note4)
Input Capacitance Clss - 1610 - PF
Output Capacitance Coss - 207 - PF
Reverse Transfer Capacitance Crss
VDS=-15V,VGS=0V,
F=1.0MHz - 135 - PF
Switching Characteristics (Note 4)
Turn-on Delay Time td(on) - 12.6 - nS
Turn-on Rise Time tr - 5.2 - nS
Turn-Off Delay Time td(off) - 54 - nS
Turn-Off Fall Time tf
VDD=-15V,ID=-3.2A
VGS=-10V,RGEN=6Ω
- 21.4 - nS
Total Gate Charge Qg - 9.5 - nC
Gate-Source Charge Qgs - 2 - nC
Gate-Drain Charge Qgd
VDS=-15V,ID=-4A,VGS=-4.5V
- 3 - nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-1A - - -1.2 V
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production
PE3115
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VGS=-2.5V, ID=-1A - 32 42 mΩ
2017 Dec. V1.1
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Typical Electrical and Thermal Characteristics
Figure 1:Switching Test Circuit
TJ-Junction Temperature() Figure 3 Power Dissipation
Vds Drain-Source Voltage (V) Figure 5 Output Characteristics
VIN
VOUT
10%
10%
50% 50%
PULSE WIDTH
INVERTED
td(on)
90%
tr
ton
90%
10%
toff
td(off)tf
90%
VIN
VOUT
10%
10%
50% 50%
PULSE WIDTH
INVERTED
td(on)
90%90%
tr
ton
90%
10%
toff
td(off)tf
90%
Figure 2:Switching Waveforms
TJ-Junction Temperature() Figure 4 Drain Current
ID- Drain Current (A) Figure 6 Drain-Source On-Resistance
PD
P
ower
(W)
I D- D
rain
Cur
rent
(A)
R
dson
On-
Res
ista
nce(
mΩ
)
I D- D
rain
Cur
rent
(A)
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PE3115
2017 Dec. V1.1
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Vgs Gate-Source Voltage (V)
Figure 7 Transfer Characteristics
Vgs Gate-Source Voltage (V) Figure 9 Rdson vs Vgs
Qg Gate Charge (nC) Figure 11 Gate Charge
TJ-Junction Temperature() Figure 8 Drain-Source On-Resistance
Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds
Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward
I D- D
rain
Cur
rent
(A)
Rds
on O
n-R
esis
tanc
e(mΩ
) V
gs G
ate-
Sou
rce
Volta
ge (V
)
Nor
mal
ized
On-
Res
ista
nce
C C
apac
itanc
e (p
F)
I s- R
ever
se D
rain
Cur
rent
(A)
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PE3115
2017 Dec. V1.1
Page 5
Vds Drain-Source Voltage (V) Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance
r(t),
Nor
mal
ized
Effe
ctiv
e Tr
ansi
ent T
herm
al Im
peda
nce
I D- D
rain
Cur
rent
(A)
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2
2
357
0.1
2
357
1.0
0.010.01 0.15 72 3 2 1.05 73 2 105 73 32 5
Operation in thisarea is limited by RDS(on).
PW≤10μs100μs
100msDC operation
10ms
1ms
2357
3
2
57
10
100
IDM =-30A
ID=-5.5A
Ta=25°CSingle pulseWhen mounted on ceramic substrate(900mm20.8mm) 1unit
PE3115
2017 Dec. V1.1
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SOT-23-3L PACKAGE INFORMATION
Min Max Min MaxA 1.050 1.250 0.041 0.049A1 0.000 0.100 0.000 0.004A2 1.050 1.150 0.041 0.045b 0.300 0.500 0.012 0.020c 0.100 0.200 0.004 0.008D 2.820 3.020 0.111 0.119E 1.500 1.700 0.059 0.067E1 2.650 2.950 0.104 0.116ee1 1.800 2.000 0.071 0.079L 0.300 0.600 0.012 0.024θ 0° 8° 0° 8°
SymbolDimensions In Millimeters Dimensions In Inches
0.950(BSC) 0.037(BSC)
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PE3115
2017 Dec. V1.1