national science foundation center for lasers and plasmas for … · 2003. 6. 3. · mool c. gupta...

National Science Foundation Center for

Lasers and Plasmas for Advanced Manufacturing

Mool C. Gupta Applied Research Center Old Dominion University

APPLIED RESEARCH CENTER OLD DOMINION UNIVERSITY

- Center Mission -

Develop Science, Engineering and Technology Base for Laser

and Plasma Processing of Materials, Devices and Systems

for Advanced Manufacturing

National Science Foundation Center


Partnership

Projects

Industry

Fed. LabsUniv.

State NSF

MembershipMembership

Memb

ership

CIT

Overh

ead &

Facilit

y

Funds& NationalRecognition


Industrial Advisory Board Members

Spectra Physics

NASA Langley Research Center

Philip Morris

Framatome ANP

Jefferson Lab

Economic Development Authority of the City of Newport News

Virginia’s Center for Innovative Technology

Luna Innovations

Materials Modification Inc.

Vistakon

Science & Technology Corp.


PROJECTS

Projects Primary Interest•Effect of Fs pulse width on micromachining (Spectra Physics)

• Laser induced compressive stresses (Framatome)

•Plasma Processing (CIT, EDA)

• Nanocatalysts for CO oxidation (Philip Morris)

•Nanostructures and Electron emission (Jefferson Lab)

•Carbon Nanotubes for EM Shielding (NASA-Langley, STC)

•Fullerenes (Luna Innovations)

•Nanoparticles (MMI)

•Optical Surfaces (Vistakon)

ADDITIONAL RESEARCH

•Laser Crystallization of a-Si for Solar Cells (NSF & BPSolar)

•Laser Crystallization of Diamond like Carbon Films (Anatech,CIT)

•Butterfly Color Formation (Alcoa Corporation)

•Laser Texturing for Adhesion of Shape Memory Alloys (NASA)

•121.6 nm VUV Lamp Source for Lithography (DARPA)

•BST Nanoparticles by Ablation for Microwave devices (to Army)

•Lasers for Art Cleaning & Preservation (to Dept. of Interior)

•Laser Hardening of Sensors (submitted to AFOSR)

•Fs laser holography ,Tera Hertz Applications and Electro-Optic Beam Scanner


Primary Interest: Jefferson Lab.

FEL• High Charge > 1 nC; Polarization not important

• Pulse Duration~ 0.1-1 ps; I~ 100 mA

• Energy~ fraction of MeV; Emittance ~ 1 mm mrad

Nuclear Physics• Low Charge ~ 1 nC; Polarization~ 80%

• Pulse duration < 1 ps; I~ 100 µA

• Energy~fraction of MeV; Emittance not important

Nanostructures & Electron Emission


Nanostructures & Electron EmissionCarbon Nanotubes Current Density:10-100 A/cm2 Emission Pulse width: PicosecondRepetition Rate: 10-100 MHz Emission Area: > 1 cm2

Dong, Xu and Gupta


ITO Film Phosphor CNT

Carbon Nanotube Electron Emission Imaging from CNT

Dong, Myneni and Gupta


RESULTS – LINE STRUCTURE

• Still picture of single-pass cutting on Silicon

τp= 110fs τp= 500fs

τp= 5ps τp= 10ps

τp= 1ps

Chien & Gupta

RESULTS – LINE STRUCTURE

* Laser cutting on Silicon @ E = 10 µJ

0

10

20

30

40

50

60

0 2 4 6 8 10 12

1-pass5-pass10-pass

Pulse width (ps)

0.5

1

1.5

2

2.5

3

1-pass5-pass10-pass

00 2 4 6 8 10 12

Pulse width (ps)

Chien & Gupta


LASER PEENING SET UP

Bugayev and Gupta


X-RAY DIFFRACTION PATTERN of 316L

70 80 90 100 110 120 1300

2

4

6

8

10

12

14

16

after LSP

70 80 90 100 110 120 1300

2

4

6

8

10

12

14

16

[220]

[200]

[111]

STEEL 316L before LSP

DIF

FRAC

TED

BEA

M (a

.u.)

2Θ (degree)

Bugayev and GuptaAPPLIED RESEARCH CENTER OLD DOMINION UNIVERSITY


Fs Laser Holography

Bugayev and Gupta

0.48 mm

Fs Laser Holography

Bugayev and Gupta


Input laser

Probe beam

Balance photodiode

Xu and Gupta


1.0 1 .5 2 .0 2 .50

1

2

3

4

5

6

7Po

wer

Abs

orpt

ion

Spec

trum

Frequency (T H z)

R oom tem perature w ater vapor

Xu and Gupta


Method:Crystallize a-Si:H using a semiconductor laser.

DiodeLaser

Diode Array

Focusing LensLaser Beam Path

a-Si:H film XRD of crystallized Si

[111]

2θ

CPS [a.u]

Set up Result

Aim: To improve the efficiency of Si solar cells.

Advantages:- Manufacturing Compatibility-Solar cell Stability.

Sponsor: National Science Foundation

Laser Crystallization of a-Si:H

Nayak & Gupta


Butterfly Color Formation

Wong and Gupta


Butterfly Surface under SEM

Wong and Gupta


Grating Fabrication

Wong and Gupta


Chamber for MIT-Lincoln Lab

RF Input

Si Detector

Discharge Chamber

Gas Input

0

5

10

15

20

100 120 140 1 60 180 200

Pre ssure = 500 To rrFlowra te = 900 Sccm0.058% H 2R F = 60 W

W avelen gth (nm)

Spectra

VUV Radiation for Materials Processing

121.6 nm VUV Lamp

Supported by DARPAYan and Gupta

Some Experiments on Plasma Interaction with Materials

silicon plate 0.5mm

T = 1683 K

RF input power 150W, Ar

Akhmerov and GuptaAPPLIED RESEARCH CENTER OLD DOMINION UNIVERSITY

Polymer film

Roller

Rotary stage

Plasma jet

Plasma Modification of Surfaces

Yang and Gupta


Plasma Processing

Untreated PET Fluorochemical Oxygen Treated

TeflonYang, Mohajer and Gupta

X-RAY DIFFRACTION PATTERN of 316L

national science foundation center for lasers and plasmas for … · 2003. 6. 3. · mool c. gupta...

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