Nanotechnology and the status of

Korea Advanced Nano Fab Center

Apr. 3. 2006

CEO & President of KANC

Joong Won Lee

- The 3rd Korea-US Nano Forum –

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Contents

1. Introduction

2. History

3. Participating Organizations

4. KANC and Gwanggyo Techno Valley

5. FAB Layout and Facility

6. FAB Service

7. Customer Service System

8. Applications

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Introduction

KANC : “Korea Advanced Nano Fab Center”

A non-profit organization supported by Ministry of Science & Technology of Korea

A national infrastructure for the nano technology development in the field of compound semiconductors, non-silicon technology and other emerging technology

1. Supporting universities and research institutes

2. Supporting industries

3. New model of government funded R&D initiatives

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History

Beginning of Construction 2004. 6

Test & Measurement Services Started 2006.2

Incorporated 2003.12

Completion of Clean Room 2005. 12

Official Opening & FAB Service Starts 2006. 4. 26

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Participationg Organization

The Six Consortiums of KANCThe Six Consortiums of KANC

KORE ELECTRONICS TECHNOLOGY INSTITUTEKorea Institute of Science and Technology

Budget of 173 million dollars for 5 years programBudget of 173 million dollars for 5 years program

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KANC Building

FAB Building : 3,500 m2 (37,600 ft2)R&D / Venture Building : 46,650 m2 (502,100 ft2)

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Gwanggyo Techno Valley

R&D Cluster for high technology & business development(30Km south from Seoul)

Korea Advanced Nano Fab Center

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KANC Building

FAB Building : 3,500 m2 (37,600 ft2)R&D / Venture Building : 46,650 m2 (502,100 ft2)

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FAB Layout

One of the largest & the best super clean room facilities in III-V industry: 1 Floor for clean room, Sub FAB for utilities

FoundryLine

Test &MeasurementNano

R&D(class 100)

Epi

CVD Photo &Lithography

(class 1)

RentalAreaEquipment

Development

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Fab Facility

Nano DeviceProcess Fab

(60% of Clean Room Area)

Litho / Pattern Zone

(661m2)

Full Process Zone

(430m2)

Nano R&D Zone(1,124m2)

Test & Measurement Fab

(397m2)

Equipment Development Fab

(331m2)

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FAB Service

Nano Device Process

Epi Service(AdvancedHigh Quality)

ElectronicDevices(MMIC)

Nano CMOSHybridCompoundSemiconductor

Opto-ElectronicDevices(OEIC)

NovelNano Devices

(Nanotubes,Molecular DevicesSpintronics)

R P P F C R F C P F C R P

R C

Equipment Development Test & Measurement

R P

R FCompound Semiconductor (60%)

Non Silicon (10%) Equipments (30%) P C

Research

Process

Foundry Service

Commercialization

Nano Device Process

Epi Service(AdvancedHigh Quality)

ElectronicDevices(MMIC)

Nano CMOSHybridCompoundSemiconductor

Opto-ElectronicDevices(OEIC)

NovelNano Devices

(Nanotubes,Molecular DevicesSpintronics)

R P P F C R F C P F C R P

R C

Equipment Development Test & Measurement

R P

R FCompound Semiconductor (60%)

Non Silicon (10%) Equipments (30%) P C

Research

Process

Foundry Service

Commercialization

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User Friendly “Customer Service System”

Web based on-line booking, scheduling, monitoring, and payment

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E-beam LithoStepper

FIB

MOCVD

Main Equipment

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Fab Facility

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Nanolithography Applications: pHEMT

T-gate of InGaAs pHEMT by50 nm Resolution E-beam Lithography

(Seoul National Univ.)

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Nanolithography Applications: Nano Photonics

Photonic Crystal Waveguide Fabrication byE-beam Writer or FIB Patterning (~200nm)

(Cambridge Univ. & SKKU)

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Nanolithography Applications: Quantum Dots

Quantum Dot Patterning by AIPEL (Atomic Image ProjectionE-beam Lithography)

Si atoms

Resist patterns

1 nm

(Seoul National Univ.)

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Epitaxial Growth Applications: Quantum Dots

(Seoul National Univ.)

Self-assembled Compound Semiconductor Quantum Dots Grown by MOCVD

QD

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Summary

National infrastructure for the nano technology R&D and businesssupport

State-of-the-art facility & equipment

Strong network of academia, industries, and research communities

User friendly service, facility, and location

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KANC would provide the best service for worldwide customers

with the high quality and user friendly operation.

Thank you !!

http://www.kanc.re.kr