mx29lv640e t/b · 2009-09-11 · 5 p/n:pm1328 rev. 1.3, jul. 07, 2009 mx29lv640e t/b mx29lv640et...

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1 P/N:PM1328 REV. 1.3, JUL. 07, 2009 MX29LV640E T/B FEATURES GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB(4KW) x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable • Sector Groups Protection / Chip Unprotect - Provides sector group protect function to prevent program or erase operation in the protected sector group - Provides chip unprotect function to allow code changing - Provides temporary sector group unprotect function for code changing in previously protected sector groups • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • Latch-up protected to 100mA from -1V to 1.5 x Vcc • Low Vcc write inhibit : Vcc ≤ Vlko • Compatible with JEDEC standard - Pinout and software compatible to single power supply Flash PERFORMANCE • High Performance - Fast access time: 70ns - Fast program time: 11us/word (typical) - Fast erase time: 0.7s/sector, 45s/chip (typical) • Low Power Consumption - Low active read current: 9mA (typical) at 5MHz - Low standby current: 5uA (typical) • 100,000 erase/program cycle (typical) • 20 years data retention SOFTWARE FEATURES • Erase Suspend/ Erase Resume - Suspends sector erase operation to read data from or program data to another sector which is not being erased • Status Reply - Data# Polling & Toggle bits provide detection of program and erase operation completion • Support Common Flash Interface (CFI) HARDWARE FEATURES • Ready/Busy# (RY/BY#) Output - Provides a hardware method of detecting program and erase operation completion • Hardware Reset (RESET#) Input - Provides a hardware method to reset the internal state machine to read mode • WP#/ACC input pin - Provides accelerated program capability 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

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Page 1: MX29LV640E T/B · 2009-09-11 · 5 P/N:PM1328 REV. 1.3, JUL. 07, 2009 MX29LV640E T/B MX29LV640ET SECTOR GROUP ARCHITECTURE Table 1. BLOCK STRUCTURE Sector Group Sector Size Sector

1P/N:PM1328 REV. 1.3, JUL. 07, 2009

MX29LV640E T/B

FEATURES

GENERAL FEATURES• 8,388,608x8/4,194,304x16switchable• SectorStructure -8KB(4KW)x8and64KB(32KW)x127• Extra128-wordsectorforsecurity -Featuresfactorylockedandidentifiable,andcustomerlockable• SectorGroupsProtection/ChipUnprotect -Providessectorgroupprotectfunctiontopreventprogramoreraseoperationintheprotectedsectorgroup -Provideschipunprotectfunctiontoallowcodechanging -Providestemporarysectorgroupunprotectfunctionforcodechanginginpreviouslyprotectedsectorgroups• SinglePowerSupplyOperation -2.7to3.6voltforread,erase,andprogramoperations• Latch-upprotectedto100mAfrom-1Vto1.5xVcc• LowVccwriteinhibit:Vcc≤Vlko• CompatiblewithJEDECstandard -PinoutandsoftwarecompatibletosinglepowersupplyFlash

PERFORMANCE• HighPerformance -Fastaccesstime:70ns -Fastprogramtime:11us/word(typical) -Fasterasetime:0.7s/sector,45s/chip(typical)• LowPowerConsumption -Lowactivereadcurrent:9mA(typical)at5MHz -Lowstandbycurrent:5uA(typical)• 100,000erase/programcycle(typical)• 20yearsdataretention

SOFTWARE FEATURES• EraseSuspend/EraseResume -Suspendssectoreraseoperation to readdata fromorprogramdata toanothersectorwhich isnotbeingerased

• StatusReply -Data#Polling&Togglebitsprovidedetectionofprogramanderaseoperationcompletion• SupportCommonFlashInterface(CFI)

HARDWARE FEATURES• Ready/Busy#(RY/BY#)Output -Providesahardwaremethodofdetectingprogramanderaseoperationcompletion• HardwareReset(RESET#)Input -Providesahardwaremethodtoresettheinternalstatemachinetoreadmode• WP#/ACCinputpin -Providesacceleratedprogramcapability

64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

Page 2: MX29LV640E T/B · 2009-09-11 · 5 P/N:PM1328 REV. 1.3, JUL. 07, 2009 MX29LV640E T/B MX29LV640ET SECTOR GROUP ARCHITECTURE Table 1. BLOCK STRUCTURE Sector Group Sector Size Sector

2P/N:PM1328 REV. 1.3, JUL. 07, 2009

MX29LV640E T/B

PIN CONFIGURATION

48 TSOP

48-Ball FBGA 6mm x 8mm (Ball Pich=0.8mm), Top View, Balls Facing Down

PACKAGE • 48-PinTSOP• 48-BallFBGA• All Pb-free devices are RoHS Compliant

A15A14A13A12A11A10A9A8

A19A20

WE#RESET#

A21WP#/ACC

RY/BY#A18A17A7A6A5A4A3A2A1

123456789101112131415161718192021222324

A16BYTE#GNDQ15/A-1Q7Q14Q6Q13Q5Q12Q4VCCQ11Q3Q10Q2Q9Q1Q8Q0OE#GNDCE#A0

484746454443424140393837363534333231302928272625

A136

5

4

3

2

1

A B C D E F G H

A9

A7

A3

WE#

RY/BY#

A12

A8

WP#/ACC

A17

A4

A14

A10

A21

A18

A6

A2

A15

A11

RE-SET# A19

A20

A5

A1

A16

Q7

Q5

Q2

Q0

A0

BYTE# Q15/A-1

Q14

Q12

Q10

Q8

Q13

VCC

Q11

Q9

GND

Q6

Q4

Q3

Q1

GNDCE# OE#

8.0 mm

6.0 mm

Page 3: MX29LV640E T/B · 2009-09-11 · 5 P/N:PM1328 REV. 1.3, JUL. 07, 2009 MX29LV640E T/B MX29LV640ET SECTOR GROUP ARCHITECTURE Table 1. BLOCK STRUCTURE Sector Group Sector Size Sector

3P/N:PM1328 REV. 1.3, JUL. 07, 2009

MX29LV640E T/B

LOGIC SYMBOL

16 or 8Q0-Q15

(A-1)

RY/BY#

A0-A21

CE#

OE#

WE#

RESET#

WP#/ACC

BYTE#

22

PIN DESCRIPTION

SYMBOL PIN NAMEA0~A21 AddressInput

Q0~Q14 DataInputs/Outputs

Q15/A-1Q15(WordMode)/LSB addr(ByteMode)

CE# ChipEnableInput

WE# WriteEnableInput

OE# OutputEnableInput

RESET# HardwareResetPin,ActiveLow

BYTE# Word/ByteSelectionInput

WP#/ACCHardwareWriteProtect/ProgrammingAccelerationInput

RY/BY# Read/BusyOutput

VCC +3.0Vsinglepowersupply

GND DeviceGround

Note: If customerdoesnot needWP#/ACC,pleaseconnectWP#/ACCpin toVCCor let it floating.TheWP#/ACChasaninternalpull-upwhenunconnected,WP#/ACCisatVih.

Page 4: MX29LV640E T/B · 2009-09-11 · 5 P/N:PM1328 REV. 1.3, JUL. 07, 2009 MX29LV640E T/B MX29LV640ET SECTOR GROUP ARCHITECTURE Table 1. BLOCK STRUCTURE Sector Group Sector Size Sector

4P/N:PM1328 REV. 1.3, JUL. 07, 2009

MX29LV640E T/B

BLOCK DIAGRAM

CONTROLINPUTLOGIC

PROGRAM/ERASE

HIGH VOLTAGE

WRITE

STATE

MACHINE

(WSM)

STATE

REGISTERFLASHARRAY

X-D

EC

OD

ER

ADDRESS

LATCH

AND

BUFFER Y-PASS GATE

Y-DE

CO

DE

R

ARRAYSOURCE

HVCOMMANDDATA

DECODER

COMMAND

DATA LATCH

I/O BUFFER

PGMDATA

HV

PROGRAMDATA LATCH

SENSEAMPLIFIER

Q0-Q15/A-1

A0-AM

AM: MSB address

CE#OE#WE#

RESET#BYTE#

WP#/ACC

Page 5: MX29LV640E T/B · 2009-09-11 · 5 P/N:PM1328 REV. 1.3, JUL. 07, 2009 MX29LV640E T/B MX29LV640ET SECTOR GROUP ARCHITECTURE Table 1. BLOCK STRUCTURE Sector Group Sector Size Sector

5P/N:PM1328 REV. 1.3, JUL. 07, 2009

MX29LV640E T/B

MX29LV640ET SECTOR GROUP ARCHITECTURE

Table 1. BLOCK STRUCTURE

Sector Group

Sector SizeSector Sector Address

A21-A12

Address RangeByte Mode(Kbytes)

Word Mode(Kwords) Byte Mode (x8) Word Mode (x16)

1 64 32 SA0 0000000xxx 000000h-00FFFFh 000000h-07FFFh1 64 32 SA1 0000001xxx 010000h-01FFFFh 008000h-0FFFFh1 64 32 SA2 0000010xxx 020000h-02FFFFh 010000h-17FFFh1 64 32 SA3 0000011xxx 030000h-03FFFFh 018000h-01FFFFh2 64 32 SA4 0000100xxx 040000h-04FFFFh 020000h-027FFFh2 64 32 SA5 0000101xxx 050000h-05FFFFh 028000h-02FFFFh2 64 32 SA6 0000110xxx 060000h-06FFFFh 030000h-037FFFh2 64 32 SA7 0000111xxx 070000h-07FFFFh 038000h-03FFFFh3 64 32 SA8 0001000xxx 080000h-08FFFFh 040000h-047FFFh3 64 32 SA9 0001001xxx 090000h-09FFFFh 048000h-04FFFFh3 64 32 SA10 0001010xxx 0A0000h-0AFFFFh 050000h-057FFFh3 64 32 SA11 0001011xxx 0B0000h-0BFFFFh 058000h-05FFFFh4 64 32 SA12 0001100xxx 0C0000h-0CFFFFh 060000h-067FFFh4 64 32 SA13 0001101xxx 0D0000h-0DFFFFh 068000h-06FFFFh4 64 32 SA14 0001110xxx 0E0000h-0EFFFFh 070000h-077FFFh4 64 32 SA15 0001111xxx 0F0000h-0FFFFFh 078000h-07FFFFh5 64 32 SA16 0010000xxx 100000h-10FFFFh 080000h-087FFFh5 64 32 SA17 0010001xxx 110000h-11FFFFh 088000h-08FFFFh5 64 32 SA18 0010010xxx 120000h-12FFFFh 090000h-097FFFh5 64 32 SA19 0010011xxx 130000h-13FFFFh 098000h-09FFFFh6 64 32 SA20 0010100xxx 140000h-14FFFFh 0A0000h-0A7FFFh6 64 32 SA21 0010101xxx 150000h-15FFFFh 0A8000h-0AFFFFh6 64 32 SA22 0010110xxx 160000h-16FFFFh 0B0000h-0B7FFFh6 64 32 SA23 0010111xxx 170000h-17FFFFh 0B8000h-0BFFFFh7 64 32 SA24 0011000xxx 180000h-18FFFFh 0C0000h-0C7FFFh7 64 32 SA25 0011001xxx 190000h-19FFFFh 0C8000h-0CFFFFh7 64 32 SA26 0011010xxx 1A0000h-1AFFFFh 0D0000h-0D7FFFh7 64 32 SA27 0011011xxx 1B0000h-1BFFFFh 0D8000h-0DFFFFh8 64 32 SA28 0011100xxx 1C0000h-1CFFFFh 0E0000h-0E7FFFh8 64 32 SA29 0011101xxx 1D0000h-1DFFFFh 0E8000h-0EFFFFh8 64 32 SA30 0011110xxx 1E0000h-1EFFFFh 0F0000h-0F7FFFh8 64 32 SA31 0011111xxx 1F0000h-1FFFFFh 0F8000h-0FFFFFh9 64 32 SA32 0100000xxx 200000h-20FFFFh 100000h-107FFFh9 64 32 SA33 0100001xxx 210000h-21FFFFh 108000h-10FFFFh9 64 32 SA34 0100010xxx 220000h-22FFFFh 110000h-117FFFh9 64 32 SA35 0100011xxx 230000h-23FFFFh 118000h-11FFFFh

10 64 32 SA36 0100100xxx 240000h-24FFFFh 120000h-127FFFh10 64 32 SA37 0100101xxx 250000h-25FFFFh 128000h-12FFFFh10 64 32 SA38 0100110xxx 260000h-26FFFFh 130000h-137FFFh10 64 32 SA39 0100111xxx 270000h-27FFFFh 138000h-13FFFFh

Page 6: MX29LV640E T/B · 2009-09-11 · 5 P/N:PM1328 REV. 1.3, JUL. 07, 2009 MX29LV640E T/B MX29LV640ET SECTOR GROUP ARCHITECTURE Table 1. BLOCK STRUCTURE Sector Group Sector Size Sector

6P/N:PM1328 REV. 1.3, JUL. 07, 2009

MX29LV640E T/B

Sector Group

Sector SizeSector Sector Address

A21-A12

Address RangeByte Mode(Kbytes)

Word Mode(Kwords) Byte Mode (x8) Word Mode (x16)

11 64 32 SA40 0101000xxx 280000h-28FFFFh 140000h-147FFFh11 64 32 SA41 0101001xxx 290000h-29FFFFh 148000h-14FFFFh11 64 32 SA42 0101010xxx 2A0000h-2AFFFFh 150000h-157FFFh11 64 32 SA43 0101011xxx 2B0000h-2BFFFFh 158000h-15FFFFh12 64 32 SA44 0101100xxx 2C0000h-2CFFFFh 160000h-147FFFh12 64 32 SA45 0101101xxx 2D0000h-2DFFFFh 168000h-14FFFFh12 64 32 SA46 0101110xxx 2E0000h-2EFFFFh 170000h-177FFFh12 64 32 SA47 0101111xxx 2F0000h-2FFFFFh 178000h-17FFFFh13 64 32 SA48 0110000xxx 300000h-30FFFFh 180000h-187FFFh13 64 32 SA49 0110001xxx 310000h-31FFFFh 188000h-18FFFFh13 64 32 SA50 0110010xxx 320000h-32FFFFh 190000h-197FFFh13 64 32 SA51 0110011xxx 330000h-33FFFFh 198000h-19FFFFh14 64 32 SA52 0110100xxx 340000h-34FFFFh 1A0000h-1A7FFFh14 64 32 SA53 0110101xxx 350000h-35FFFFh 1A8000h-1AFFFFh14 64 32 SA54 0110110xxx 360000h-36FFFFh 1B0000h-1B7FFFh14 64 32 SA55 0110111xxx 370000h-37FFFFh 1B8000h-1BFFFFh15 64 32 SA56 0111000xxx 380000h-38FFFFh 1C0000h-1C7FFFh15 64 32 SA57 0111001xxx 390000h-39FFFFh 1C8000h-1CFFFFh15 64 32 SA58 0111010xxx 3A0000h-3AFFFFh 1D0000h-1D7FFFh15 64 32 SA59 0111011xxx 3B0000h-3BFFFFh 1D8000h-1DFFFFh16 64 32 SA60 0111100xxx 3C0000h-3CFFFFh 1E0000h-1E7FFFh16 64 32 SA61 0111101xxx 3D0000h-3DFFFFh 1E8000h-1EFFFFh16 64 32 SA62 0111110xxx 3E0000h-3EFFFFh 1F0000h-1F7FFFh16 64 32 SA63 0111111xxx 3F0000h-3FFFFFh 1F8000h-1FFFFFh17 64 32 SA64 1000000xxx 400000h-40FFFFh 200000h-207FFFh17 64 32 SA65 1000001xxx 410000h-41FFFFh 208000h-20FFFFh17 64 32 SA66 1000010xxx 420000h-42FFFFh 210000h-217FFFh17 64 32 SA67 1000011xxx 430000h-43FFFFh 218000h-21FFFFh18 64 32 SA68 1000100xxx 440000h-44FFFFh 220000h-227FFFh18 64 32 SA69 1000101xxx 450000h-45FFFFh 228000h-22FFFFh18 64 32 SA70 1000110xxx 460000h-46FFFFh 230000h-237FFFh18 64 32 SA71 1000111xxx 470000h-47FFFFh 238000h-23FFFFh19 64 32 SA72 1001000xxx 480000h-48FFFFh 240000h-247FFFh19 64 32 SA73 1001001xxx 490000h-49FFFFh 248000h-24FFFFh19 64 32 SA74 1001010xxx 4A0000h-4AFFFFh 250000h-257FFFh19 64 32 SA75 1001011xxx 4B0000h-4BFFFFh 258000h-25FFFFh20 64 32 SA76 1001100xxx 4C0000h-4CFFFFh 260000h-247FFFh20 64 32 SA77 1001101xxx 4D0000h-4DFFFFh 268000h-24FFFFh20 64 32 SA78 1001110xxx 4E0000h-4EFFFFh 270000h-277FFFh20 64 32 SA79 1001111xxx 4F0000h-4FFFFFh 278000h-27FFFFh

Page 7: MX29LV640E T/B · 2009-09-11 · 5 P/N:PM1328 REV. 1.3, JUL. 07, 2009 MX29LV640E T/B MX29LV640ET SECTOR GROUP ARCHITECTURE Table 1. BLOCK STRUCTURE Sector Group Sector Size Sector

7P/N:PM1328 REV. 1.3, JUL. 07, 2009

MX29LV640E T/B

Sector Group

Sector SizeSector Sector Address

A21-A12

Address RangeByte Mode(Kbytes)

Word Mode(Kwords) Byte Mode (x8) Word Mode (x16)

21 64 32 SA80 1010000xxx 500000h-50FFFFh 280000h-287FFFh21 64 32 SA81 1010001xxx 510000h-51FFFFh 288000h-28FFFFh21 64 32 SA82 1010010xxx 520000h-52FFFFh 290000h-297FFFh21 64 32 SA83 1010011xxx 530000h-53FFFFh 298000h-29FFFFh22 64 32 SA84 1010100xxx 540000h-54FFFFh 2A0000h-2A7FFFh22 64 32 SA85 1010101xxx 550000h-55FFFFh 2A8000h-2AFFFFh22 64 32 SA86 1010110xxx 560000h-56FFFFh 2B0000h-2B7FFFh22 64 32 SA87 1010111xxx 570000h-57FFFFh 2B8000h-2BFFFFh23 64 32 SA88 1011000xxx 580000h-58FFFFh 2C0000h-2C7FFFh23 64 32 SA89 1011001xxx 590000h-59FFFFh 2C8000h-2CFFFFh23 64 32 SA90 1011010xxx 5A0000h-5AFFFFh 2D0000h-2D7FFFh23 64 32 SA91 1011011xxx 5B0000h-5BFFFFh 2D8000h-2DFFFFh24 64 32 SA92 1011100xxx 5C0000h-5CFFFFh 2E0000h-2E7FFFh24 64 32 SA93 1011101xxx 5D0000h-5DFFFFh 2E8000h-2EFFFFh24 64 32 SA94 1011110xxx 5E0000h-5EFFFFh 2F0000h-2F7FFFh24 64 32 SA95 1011111xxx 5F0000h-5FFFFFh 2F8000h-2FFFFFh25 64 32 SA96 1100000xxx 600000h-60FFFFh 300000h-307FFFh25 64 32 SA97 1100001xxx 610000h-61FFFFh 308000h-30FFFFh25 64 32 SA98 1100010xxx 620000h-62FFFFh 310000h-317FFFh25 64 32 SA99 1100011xxx 630000h-63FFFFh 318000h-31FFFFh26 64 32 SA100 1100100xxx 640000h-64FFFFh 320000h-327FFFh26 64 32 SA101 1100101xxx 650000h-65FFFFh 328000h-32FFFFh26 64 32 SA102 1100110xxx 660000h-66FFFFh 330000h-337FFFh26 64 32 SA103 1100111xxx 670000h-67FFFFh 338000h-33FFFFh27 64 32 SA104 1101000xxx 680000h-68FFFFh 340000h-347FFFh27 64 32 SA105 1101001xxx 690000h-69FFFFh 348000h-34FFFFh27 64 32 SA106 1101010xxx 6A0000h-6AFFFFh 350000h-357FFFh27 64 32 SA107 1101011xxx 6B0000h-6BFFFFh 358000h-35FFFFh28 64 32 SA108 1101100xxx 6C0000h-6CFFFFh 360000h-347FFFh28 64 32 SA109 1101101xxx 6D0000h-6DFFFFh 368000h-34FFFFh28 64 32 SA110 1101110xxx 6E0000h-6EFFFFh 370000h-377FFFh28 64 32 SA111 1101111xxx 6F0000h-6FFFFFh 378000h-37FFFFh29 64 32 SA112 1110000xxx 700000h-70FFFFh 380000h-387FFFh29 64 32 SA113 1110001xxx 710000h-71FFFFh 388000h-38FFFFh29 64 32 SA114 1110010xxx 720000h-72FFFFh 390000h-397FFFh29 64 32 SA115 1110011xxx 730000h-73FFFFh 398000h-39FFFFh30 64 32 SA116 1110100xxx 740000h-74FFFFh 3A0000h-3A7FFFh30 64 32 SA117 1110101xxx 750000h-75FFFFh 3A8000h-3AFFFFh30 64 32 SA118 1110110xxx 760000h-76FFFFh 3B0000h-3B7FFFh30 64 32 SA119 1110111xxx 770000h-77FFFFh 3B8000h-3BFFFFh

Page 8: MX29LV640E T/B · 2009-09-11 · 5 P/N:PM1328 REV. 1.3, JUL. 07, 2009 MX29LV640E T/B MX29LV640ET SECTOR GROUP ARCHITECTURE Table 1. BLOCK STRUCTURE Sector Group Sector Size Sector

8P/N:PM1328 REV. 1.3, JUL. 07, 2009

MX29LV640E T/B

Top Boot Security Sector Addresses

Sector Group

Sector SizeSector Sector Address

A21-A12

Address RangeByte Mode(Kbytes)

Word Mode(Kwords) Byte Mode (x8) Word Mode (x16)

31 64 32 SA120 1111000xxx 780000h-78FFFFh 3C0000h-3C7FFFh31 64 32 SA121 1111001xxx 790000h-79FFFFh 3C8000h-3CFFFFh31 64 32 SA122 1111010xxx 7A0000h-7AFFFFh 3D0000h-3D7FFFh31 64 32 SA123 1111011xxx 7B0000h-7BFFFFh 3D8000h-3DFFFFh32 64 32 SA124 1111100xxx 7C0000h-7CFFFFh 3E0000h-3E7FFFh32 64 32 SA125 1111101xxx 7D0000h-7DFFFFh 3E8000h-3EFFFFh32 64 32 SA126 1111110xxx 7E0000h-7EFFFFh 3F0000h-3F7FFFh33 8 4 SA127 1111111000 7F0000h-7F1FFFh 3F8000h-3FFFFFh34 8 4 SA128 1111111001 7F2000h-7F3FFFh 3F9000h-3F9FFFh35 8 4 SA129 1111111010 7F4000h-7F5FFFh 3FA000h-3FAFFFh36 8 4 SA130 1111111011 7F6000h-7F7FFFh 3FB000h-3FBFFFh37 8 4 SA131 1111111100 7F8000h-7F9FFFh 3FC000h-3FCFFFh38 8 4 SA132 1111111101 7FA000h-7FBFFFh 3FD000h-3FDFFFh39 8 4 SA133 1111111110 7FC000h-7FDFFFh 3FE000h-3FEFFFh40 8 4 SA134 1111111111 7FE000h-7FFFFFh 3FF000h-3FFFFFh

Sector Size Sector Address A21~A12

Address RangeByte Mode(Kbytes)

Word Mode (Kwords) Byte Mode (x8) Word Mode (x16)

256 128 1111111111 7FFF00h-7FFFFFh 3FFF80h-3FFFFFh

Page 9: MX29LV640E T/B · 2009-09-11 · 5 P/N:PM1328 REV. 1.3, JUL. 07, 2009 MX29LV640E T/B MX29LV640ET SECTOR GROUP ARCHITECTURE Table 1. BLOCK STRUCTURE Sector Group Sector Size Sector

9P/N:PM1328 REV. 1.3, JUL. 07, 2009

MX29LV640E T/B

MX29LV640EB SECTOR GROUP ARCHITECTURE

Sector Group

Sector SizeSector Sector Address

A21-A12

Address RangeByte Mode(Kbytes)

Word Mode(Kwords) Byte Mode (x8) Word Mode (x16)

1 8 4 SA0 0000000000 000000h-001FFFh 000000h-000FFFh2 8 4 SA1 0000000001 002000h-003FFFh 001000h-001FFFh3 8 4 SA2 0000000010 004000h-005FFFh 002000h-002FFFh4 8 4 SA3 0000000011 006000h-007FFFh 003000h-003FFFh5 8 4 SA4 0000000100 008000h-009FFFh 004000h-004FFFh6 8 4 SA5 0000000101 00A000h-00BFFFh 005000h-005FFFh7 8 4 SA6 0000000110 00C000h-00DFFFh 006000h-006FFFh8 8 4 SA7 0000000111 00E000h-00FFFFh 007000h-007FFFh9 64 32 SA8 0000001xxx 010000h-01FFFFh 008000h-00FFFFh9 64 32 SA9 0000010xxx 020000h-02FFFFh 010000h-017FFFh9 64 32 SA10 0000011xxx 030000h-03FFFFh 018000h-01FFFFh

10 64 32 SA11 0000100xxx 040000h-04FFFFh 020000h-027FFFh10 64 32 SA12 0000101xxx 050000h-05FFFFh 028000h-02FFFFh10 64 32 SA13 0000110xxx 060000h-06FFFFh 030000h-037FFFh10 64 32 SA14 0000111xxx 070000h-07FFFFh 038000h-03FFFFh11 64 32 SA15 0001000xxx 080000h-08FFFFh 040000h-047FFFh11 64 32 SA16 0001001xxx 090000h-09FFFFh 048000h-04FFFFh11 64 32 SA17 0001010xxx 0A0000h-0AFFFFh 050000h-057FFFh11 64 32 SA18 0001011xxx 0B0000h-0BFFFFh 058000h-05FFFFh12 64 32 SA19 0001100xxx 0C0000h-0CFFFFh 060000h-067FFFh12 64 32 SA20 0001101xxx 0D0000h-0DFFFFh 068000h-06FFFFh12 64 32 SA21 0001110xxx 0E0000h-0EFFFFh 070000h-077FFFh12 64 32 SA22 0001111xxx 0F0000h-0FFFFFh 078000h-07FFFFh13 64 32 SA23 0010000xxx 100000h-10FFFFh 080000h-087FFFh13 64 32 SA24 0010001xxx 110000h-11FFFFh 088000h-08FFFFh13 64 32 SA25 0010010xxx 120000h-12FFFFh 090000h-097FFFh13 64 32 SA26 0010011xxx 130000h-13FFFFh 098000h-09FFFFh14 64 32 SA27 0010100xxx 140000h-14FFFFh 0A0000h-0A7FFFh14 64 32 SA28 0010101xxx 150000h-15FFFFh 0A8000h-0AFFFFh14 64 32 SA29 0010110xxx 160000h-16FFFFh 0B0000h-0B7FFFh14 64 32 SA30 0010111xxx 170000h-17FFFFh 0B8000h-0BFFFFh15 64 32 SA31 0011000xxx 180000h-18FFFFh 0C0000h-0C7FFFh15 64 32 SA32 0011001xxx 190000h-19FFFFh 0C8000h-0CFFFFh15 64 32 SA33 0011010xxx 1A0000h-1AFFFFh 0D0000h-0D7FFFh15 64 32 SA34 0011011xxx 1B0000h-1BFFFFh 0D8000h-0DFFFFh16 64 32 SA35 0011100xxx 1C0000h-1CFFFFh 0E0000h-0E7FFFh16 64 32 SA36 0011101xxx 1D0000h-1DFFFFh 0E8000h-0EFFFFh16 64 32 SA37 0011110xxx 1E0000h-1EFFFFh 0F0000h-0F7FFFh16 64 32 SA38 0011111xxx 1F0000h-1FFFFFh 0F8000h-0FFFFFh

Page 10: MX29LV640E T/B · 2009-09-11 · 5 P/N:PM1328 REV. 1.3, JUL. 07, 2009 MX29LV640E T/B MX29LV640ET SECTOR GROUP ARCHITECTURE Table 1. BLOCK STRUCTURE Sector Group Sector Size Sector

10P/N:PM1328 REV. 1.3, JUL. 07, 2009

MX29LV640E T/B

Sector Group

Sector SizeSector Sector Address

A21-A12

Address RangeByte Mode(Kbytes)

Word Mode(Kwords) Byte Mode (x8) Word Mode (x16)

17 64 32 SA39 0100000xxx 200000h-20FFFFh 100000h-107FFFh17 64 32 SA40 0100001xxx 210000h-21FFFFh 108000h-10FFFFh17 64 32 SA41 0100010xxx 220000h-22FFFFh 110000h-117FFFh17 64 32 SA42 0100011xxx 230000h-23FFFFh 118000h-11FFFFh18 64 32 SA43 0100100xxx 240000h-24FFFFh 120000h-127FFFh18 64 32 SA44 0100101xxx 250000h-25FFFFh 128000h-12FFFFh18 64 32 SA45 0100110xxx 260000h-26FFFFh 130000h-137FFFh18 64 32 SA46 0100111xxx 270000h-27FFFFh 138000h-13FFFFh19 64 32 SA47 0101000xxx 280000h-28FFFFh 140000h-147FFFh19 64 32 SA48 0101001xxx 290000h-29FFFFh 148000h-14FFFFh19 64 32 SA49 0101010xxx 2A0000h-2AFFFFh 150000h-157FFFh19 64 32 SA50 0101011xxx 2B0000h-2BFFFFh 158000h-15FFFFh20 64 32 SA51 0101100xxx 2C0000h-2CFFFFh 160000h-167FFFh20 64 32 SA52 0101101xxx 2D0000h-2DFFFFh 168000h-16FFFFh20 64 32 SA53 0101110xxx 2E0000h-2EFFFFh 170000h-177FFFh20 64 32 SA54 0101111xxx 2F0000h-2FFFFFh 178000h-17FFFFh21 64 32 SA55 0110000xxx 300000h-30FFFFh 180000h-187FFFh21 64 32 SA56 0110001xxx 310000h-31FFFFh 188000h-18FFFFh21 64 32 SA57 0110010xxx 320000h-32FFFFh 190000h-197FFFh21 64 32 SA58 0110011xxx 330000h-33FFFFh 198000h-19FFFFh22 64 32 SA59 0110100xxx 340000h-34FFFFh 1A0000h-1A7FFFh22 64 32 SA60 0110101xxx 350000h-35FFFFh 1A8000h-1AFFFFh22 64 32 SA61 0110110xxx 360000h-36FFFFh 1B0000h-1B7FFFh22 64 32 SA62 0110111xxx 370000h-37FFFFh 1B8000h-1BFFFFh23 64 32 SA63 0111000xxx 380000h-38FFFFh 1C0000h-1C7FFFh23 64 32 SA64 0111001xxx 390000h-39FFFFh 1C8000h-1CFFFFh23 64 32 SA65 0111010xxx 3A0000h-3AFFFFh 1D0000h-1D7FFFh23 64 32 SA66 0111011xxx 3B0000h-3BFFFFh 1D8000h-1DFFFFh24 64 32 SA67 0111100xxx 3C0000h-3CFFFFh 1E0000h-1E7FFFh24 64 32 SA68 0111101xxx 3D0000h-3DFFFFh 1E8000h-1EFFFFh24 64 32 SA69 0111110xxx 3E0000h-3EFFFFh 1F0000h-1F7FFFh24 64 32 SA70 0111111xxx 3F0000h-3FFFFFh 1F8000h-1FFFFFh25 64 32 SA71 1000000xxx 400000h-40FFFFh 200000h-207FFFh25 64 32 SA72 1000001xxx 410000h-41FFFFh 208000h-20FFFFh25 64 32 SA73 1000010xxx 420000h-42FFFFh 210000h-217FFFh25 64 32 SA74 1000011xxx 430000h-43FFFFh 218000h-21FFFFh26 64 32 SA75 1000100xxx 440000h-44FFFFh 220000h-227FFFh26 64 32 SA76 1000101xxx 450000h-45FFFFh 228000h-22FFFFh26 64 32 SA77 1000110xxx 460000h-46FFFFh 230000h-237FFFh26 64 32 SA78 1000111xxx 470000h-47FFFFh 238000h-23FFFFh

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Sector Group

Sector SizeSector Sector Address

A21-A12

Address RangeByte Mode(Kbytes)

Word Mode(Kwords) Byte Mode (x8) Word Mode (x16)

27 64 32 SA79 1001000xxx 480000h-48FFFFh 240000h-247FFFh27 64 32 SA80 1001001xxx 490000h-49FFFFh 248000h-24FFFFh27 64 32 SA81 1001010xxx 4A0000h-4AFFFFh 250000h-257FFFh27 64 32 SA82 1001011xxx 4B0000h-4BFFFFh 258000h-25FFFFh28 64 32 SA83 1001100xxx 4C0000h-4CFFFFh 260000h-267FFFh28 64 32 SA84 1001101xxx 4D0000h-4DFFFFh 268000h-26FFFFh28 64 32 SA85 1001110xxx 4E0000h-4EFFFFh 270000h-277FFFh28 64 32 SA86 1001111xxx 4F0000h-4FFFFFh 278000h-27FFFFh29 64 32 SA87 1010000xxx 500000h-50FFFFh 280000h-287FFFh29 64 32 SA88 1010001xxx 510000h-51FFFFh 288000h-28FFFFh29 64 32 SA89 1010010xxx 520000h-52FFFFh 290000h-297FFFh29 64 32 SA90 1010011xxx 530000h-53FFFFh 298000h-29FFFFh30 64 32 SA91 1010100xxx 540000h-54FFFFh 2A0000h-2A7FFFh30 64 32 SA92 1010101xxx 550000h-55FFFFh 2A8000h-2AFFFFh30 64 32 SA93 1010110xxx 560000h-56FFFFh 2B0000h-2B7FFFh30 64 32 SA94 1010111xxx 570000h-57FFFFh 2B8000h-2BFFFFh31 64 32 SA95 1011000xxx 580000h-58FFFFh 2C0000h-2C7FFFh31 64 32 SA96 1011001xxx 590000h-59FFFFh 2C8000h-2CFFFFh31 64 32 SA97 1011010xxx 5A0000h-5AFFFFh 2D0000h-2D7FFFh31 64 32 SA98 1011011xxx 5B0000h-5BFFFFh 2D8000h-2DFFFFh32 64 32 SA99 1011100xxx 5C0000h-5CFFFFh 2E0000h-2E7FFFh32 64 32 SA100 1011101xxx 5D0000h-5DFFFFh 2E8000h-2EFFFFh32 64 32 SA101 1011110xxx 5E0000h-5EFFFFh 2F0000h-2F7FFFh32 64 32 SA102 1011111xxx 5F0000h-5FFFFFh 2F8000h-2FFFFFh33 64 32 SA103 1100000xxx 600000h-60FFFFh 300000h-307FFFh33 64 32 SA104 1100001xxx 610000h-61FFFFh 308000h-30FFFFh33 64 32 SA105 1100010xxx 620000h-62FFFFh 310000h-317FFFh33 64 32 SA106 1100011xxx 630000h-63FFFFh 318000h-31FFFFh34 64 32 SA107 1100100xxx 640000h-64FFFFh 320000h-327FFFh34 64 32 SA108 1100101xxx 650000h-65FFFFh 328000h-32FFFFh34 64 32 SA109 1100110xxx 660000h-66FFFFh 330000h-337FFFh34 64 32 SA110 1100111xxx 670000h-67FFFFh 338000h-33FFFFh35 64 32 SA111 1101000xxx 680000h-68FFFFh 340000h-347FFFh35 64 32 SA112 1101001xxx 690000h-69FFFFh 348000h-34FFFFh35 64 32 SA113 1101010xxx 6A0000h-6AFFFFh 350000h-357FFFh35 64 32 SA114 1101011xxx 6B0000h-6BFFFFh 358000h-35FFFFh36 64 32 SA115 1101100xxx 6C0000h-6CFFFFh 360000h-367FFFh36 64 32 SA116 1101101xxx 6D0000h-6DFFFFh 368000h-36FFFFh36 64 32 SA117 1101110xxx 6E0000h-6EFFFFh 370000h-377FFFh36 64 32 SA118 1101111xxx 6F0000h-6FFFFFh 378000h-37FFFFh

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Bottom Boot Security Sector Addresses

Sector Group

Sector SizeSector Sector Address

A21-A12

Address RangeByte Mode(Kbytes)

Word Mode(Kwords) Byte Mode (x8) Word Mode (x16)

37 64 32 SA119 1110000xxx 700000h-70FFFFh 380000h-387FFFh37 64 32 SA120 1110001xxx 710000h-71FFFFh 388000h-38FFFFh37 64 32 SA121 1110010xxx 720000h-72FFFFh 390000h-397FFFh37 64 32 SA122 1110011xxx 730000h-73FFFFh 398000h-39FFFFh38 64 32 SA123 1110100xxx 740000h-74FFFFh 3A0000h-3A7FFFh38 64 32 SA124 1110101xxx 750000h-75FFFFh 3A8000h-3AFFFFh38 64 32 SA125 1110110xxx 760000h-76FFFFh 3B0000h-3B7FFFh38 64 32 SA126 1110111xxx 770000h-77FFFFh 3B8000h-3BFFFFh39 64 32 SA127 1111000xxx 780000h-78FFFFh 3C0000h-3C7FFFh39 64 32 SA128 1111001xxx 790000h-79FFFFh 3C8000h-3CFFFFh39 64 32 SA129 1111010xxx 7A0000h-7AFFFFh 3D0000h-3D7FFFh39 64 32 SA130 1111011xxx 7B0000h-7BFFFFh 3D8000h-3DFFFFh40 64 32 SA131 1111100xxx 7C0000h-7CFFFFh 3E0000h-3E7FFFh40 64 32 SA132 1111101xxx 7D0000h-7DFFFFh 3E8000h-3EFFFFh40 64 32 SA133 1111110xxx 7E0000h-7EFFFFh 3F0000h-3F7FFFh40 64 32 SA134 1111111xxx 7F0000h-7FFFFFh 3F8000h-3FFFFFh

Sector Size Sector Address A21~A12

Address RangeByte Mode(Kbytes)

Word Mode (Kwords) Byte Mode (x8) Word Mode (x16)

256 128 0000000000 000000h-0000FFh 000000h-00007Fh

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Table 2. BUS OPERATION--1

Notes:1.AllsectorswillbeunprotectedifWP#/ACC=Vhv.2. ThetwooutmostbootsectorsareprotectedifWP#/ACC=Vil.3. WhenWP#/ACC=Vih,theprotectionconditionsofthetwooutmostbootsectorsdependonpreviousprotec-

tionconditions."Sector/SectorBlockProtectionandUnprotection"describestheprotectandunprotectmeth-od.

4. Q0~Q15areinput(DIN)oroutput(DOUT)pinsaccordingtotherequestsofcommandsequence,sectorpro-tection,ordatapollingalgorithm.

5. InWordMode(Byte#=Vih),theaddressesareAMtoA0. InByteMode(Byte#=Vil),theaddressesareAMtoA-1(Q15).6. AM:MSBofaddress.

Mode Select RE- SET# CE# WE# OE# Address

Data (I/O)

Q0~Q7

Byte# WP#/ACCVil Vih

Data (I/O) Q8~Q15DeviceReset L X X X X HighZ HighZ HighZ L/H

StandbyMode Vcc± 0.3V

Vcc± 0.3V X X X HighZ HighZ HighZ H

OutputDisable H L H H X HighZ HighZ HighZ L/HReadMode H L H L AIN DOUT Q8-Q14=

HighZ,Q15=A-1

DOUT L/HWrite(Note1) H L L H AIN DIN DIN Note3AccelerateProgram H L L H AIN DIN DIN VhvTemporarySector-GroupUnprotect Vhv X X X AIN DIN HighZ DIN Note3

Sector-GroupProtect(Note2) Vhv L L H

SectorAddress,A6=L,A1=H,

A0=LDIN,DOUT X X L/H

ChipUnprotect(Note2) Vhv L L H

SectorAddress,A6=H,A1=H,

A0=LDIN,DOUT X X Note3

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BUS OPERATION--2

Notes:1.Sectorunprotectedcode:00h.Sectorprotectedcode:01h.2.Factorylockedcode:88h. Factoryunlockedcode:08h. 3.AM:MSBofaddress.

ItemControl Input AM

to A12

A11 to

A10A9

A8 to A7

A6A5 to A2

A1 A0 Q0~Q7 Q8~Q15CE# WE# OE#

SectorLockStatusVerification L H L SA x Vhv x L x H L 01hor00h

(Note1) x

ReadSiliconIDManufacturerCode L H L x x Vhv x L x L L C2h x

ReadSiliconIDMX29LV640ET L H L x x Vhv x L x L H C9h

22h(Word)XXh(Byte)

ReadSiliconIDMX29LV640EB L H L x x Vhv x L x L H CBh

22h(Word)XXh(Byte)

ReadIndicatorBit(Q7)ForSecuritySector

L H L x x Vhv x L x H H (Note2) x

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WRITE COMMANDS/COMMAND SEQUENCES

Towriteacommandtothedevice,systemmustdriveWE#andCE#toVil,andOE#toVih.Inacommandcycle,alladdressare latchedat the later fallingedgeofCE#andWE#,andalldataare latchedat theearlier risingedgeofCE#andWE#.

Figure1illustratestheACtimingwaveformofawritecommand,andTable3definesallthevalidcommandsetsofthedevice.Systemisnotallowedtowriteinvalidcommandsnotdefinedinthisdatasheet.Writinganinvalidcommandwillbringthedevicetoanundefinedstate.

REQUIREMENTS FOR READING ARRAY DATA

Readarrayactionistoreadthedatastoredinthearray.Whilethememorydeviceisinpowereduporhasbeenreset,itwillautomaticallyenterthestatusofreadarray.Ifthemicroprocessorwantstoreadthedatastoredinthearray,ithastodriveCE#(deviceenablecontrolpin)andOE#(Outputcontrolpin)asVil,andinputtheaddressofthedatatobereadintoaddresspinatthesametime.Afteraperiodofreadcycle(TceorTaa),thedatabeingreadoutwillbedisplayedonoutputpinformicroprocessortoaccess.IfCE#orOE#isVih,theoutputwillbeintri-state,andtherewillbenodatadisplayedonoutputpinatall.

Afterthememorydevicecompletesembeddedoperation(automaticEraseorProgram),itwillautomaticallyre-turntothestatusofreadarray,andthedevicecanreadthedatainanyaddressinthearray.Intheprocessoferasing,ifthedevicereceivestheErasesuspendcommand,eraseoperationwillbestoppedtemporarilyafteraperiodoftimenomorethanTreadyandthedevicewillreturntothestatusofreadarray.Atthistime,thedevicecanreadthedatastoredinanyaddressexceptthesectorbeingerasedinthearray.Inthestatusoferasesus-pend,ifuserwantstoreadthedatainthesectorsbeingerased,thedevicewilloutputstatusdataontotheout-put.Similarly,ifprogramcommandisissuedaftererasesuspend,afterprogramoperationiscompleted,systemcanstillreadarraydatainanyaddressexceptthesectorstobeerased. Thedeviceneedsto issueresetcommandtoenablereadarrayoperationagaininordertoarbitrarilyreadthedatainthearrayinthefollowingtwosituations:

1.Inprogramoreraseoperation,theprogrammingorerasingfailurecausesQ5togohigh.

2.ThedeviceisinautoselectmodeorCFImode.

In the twosituationsabove, if resetcommand isnot issued, thedevice isnot in readarraymodeandsystemmustissueresetcommandbeforereadingarraydata.

ACCELERATED PROGRAM OPERATION

Theacceleratedprogramcanimproveprogrammingperformancecomparedwithword/byteprogram.Byapply-ingVhvonWP#/ACCpin,thedevicewillenteracceleratedprogramanddrawcurrentnomorethanIcp1fromWP#/ACCpin.RemovingtheVhvfromWP#/ACCpinwillputthedevicebacktonormaloperation(notacceler-ated).

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RESET# OPERATION

DrivingRESET#pinlowforaperiodmorethanTrpwillresetthedevicebacktoreadmode.Ifthedeviceisinprogramoreraseoperation,theresetoperationwill takeatmostaperiodofTreadyforthedevicetoreturntoreadarraymode.Beforethedevicereturnstoreadarraymode,theRY/BY#pinremainslow(busystatus).

WhenRESET#pinisheldatGND±0.3V,thedeviceconsumesstandbycurrent(Isb).However,devicedrawslarg-ercurrentifRESET#pinisheldatVilbutnotwithinGND±0.3V.

ItisrecommendedthatthesystemtotieitsresetsignaltoRESET#pinofflashmemory,sothattheflashmemo-rywillberesetduringsystemresetandallowssystemtoreadbootcodefromflashmemory.

SECTOR GROUP PROTECT OPERATION

Whenasectorgroupisprotected,programoreraseoperationwillbedisabledonthesesectors.MX29LV640ET/Bprovidestwomethodsforsectorgroupprotection.

Oncethesectorgroupisprotected,thesectorgroupremainsprotecteduntilnextchipunprotect,oristemporar-ilyunprotectedbyassertingRESET#pinatVhv.Refertotemporarysectorgroupunprotectoperationforfurtherdetails.

ThefirstmethodisbyapplyingVhvonRESET#pin.RefertoFigure13fortimingdiagramandFigure14forthealgorithmforthismethod.

TheothermethodisassertingVhvonA9andOE#pins,withA6andCE#atVil.TheprotectionoperationbeginsatthefallingedgeofWE#andterminatesattherisingedge.ContactMacronixfordetails.

CHIP UNPROTECT OPERATION

MX29LV640ET/Bprovidestwomethodsforchipunprotect.Thechipunprotectoperationunprotectsallsectorswithin thedevice. It is recommended to protect all sectors beforeactivating chip unprotectmode.All sectorsgroupsareunprotectedwhenshippedfromthefactory.

ThefirstmethodisbyapplyingVhvonRESET#pin.RefertoFigure13fortimingdiagramandFigure14foral-gorithmoftheoperation.

TheothermethodisassertingVhvonA9andOE#pins,withA6atVihandCE#atVil.TheunprotectoperationbeginsatthefallingedgeofWE#andterminatesattherisingedge.ContactMacronixfordetails.

TEMPORARY SECTOR GROUP UNPROTECT OPERATION

SystemcanapplyRESET#pinatVhvtoplacethedeviceintemporaryunprotectmode.Inthismode,previouslyprotectedsectorscanbeprogrammedorerasedjustasitisunprotected.Thedevicesreturnstonormalopera-tiononceVhvisremovedfromRESET#pinandpreviouslyprotectedsectorsareagainprotected.

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WRITE PROTECT (WP#)

AnotherfunctionoftheWP#/ACCpinistoprovidewriteprotectionfunctiononthetwooutermost8Kbytebootsectors.WhenViLisassertedonWP#/ACCpin,thetwobootsectorsareprotectedregardlessofthepreviousstateof protection implementedbyaforementionedSectorGroupProtect/ChipUnprotect. ForMX29LV640ET,thetwooutermostsectorsarethetwobootsectorsofthehighestaddresses.ForMX29LV640EB,thetwoouter-mostsectorsarethetwobootsectorsofthelowestaddresses.

NotethattheWP#/ACCshouldbeeitherVhv,Vih,orVil,andmustnotbefloatedorunconnected;otherwisethedevicemaynotfunctionproperly.

AUTOMATIC SELECT OPERATION

WhenthedeviceisinReadarraymode,erase-suspendedreadarraymodeorCFImode,usercanissuereadsiliconIDcommandtoenterreadsiliconIDmode.AfterenteringreadsiliconIDmode,usercanqueryseveralsiliconIDscontinuouslyanddoesnotneedtoissuereadsiliconIDmodeagain.WhenA0isLow,devicewillout-putMacronixManufactureIDC2H.WhenA0ishigh,devicewilloutputDeviceID.InreadsiliconIDmode,issu-ingresetcommandwillresetdevicebacktoreadarraymodeorerase-suspendedreadarraymode.

AnotherwaytoenterreadsiliconIDistoapplyhighvoltageonA9pinwithCE#,OE#,A6andA1atVil.WhilethehighvoltageofA9pinisdischarged,devicewillautomaticallyleavereadsiliconIDmodeandgobacktoreadarraymodeorerase-suspendedreadarraymode.WhenA0isLow,devicewilloutputMacronixManufactureIDC2.WhenA0ishigh,devicewilloutputDeviceID.

VERIFY SECTOR GROUP PROTECT STATUS OPERATION

MX29LV640ET/BprovideshardwaresectorprotectionagainstProgramandEraseoperationforprotectedsec-tors.ThesectorprotectstatuscanbereadthroughSectorProtectVerifycommand.ThismethodrequiresVhvonA9pin,VihonWE#andA1pins,VilonCE#,OE#,A6andA0pins,andsectoraddressonA12toA21pins.Ifthereadoutdatais01H,thedesignatedsectorisprotected.Oppositely,ifthereadoutdatais00H,thedesignatedsectorisnotprotected.

SECURITY SECTOR FLASH MEMORY REGION

TheSecuritySectorregionisanextramemoryspaceof128wordsinlength.Thesecuritysectorscanbelockeduponshippingfromfactory,oritcanbelockedbycustomeraftershipping.CustomercanissueSecuritySectorFactoryProtectVerifyand/orSecuritySectorProtectVerifytoquerythelockstatusofthedevice.

In factory-lockeddevice,securitysectorregion isprotectedwhenshippedfromfactoryandthesecuritysiliconsectorindicatorbitissetto"1".Incustomerlockabledevice,securitysectorregionisunprotectedwhenshippedfromfactoryandthesecuritysiliconindicatorbitissetto"0".

Factory Locked: Security Sector Programmed and Protected at the Factory

Inafactorylockeddevice,thesecuritysiliconregionispermanentlylockedaftershippingfromfactory.Thede-vicewillhavea16-byte (8-word)ESN in thesecurity region. Inbottombootdevice :000000h -000007h (forMX29LV640EB).InTopbootdevice:3FFF70h-3FFF77h(forMX29LV640ET).

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Customer Lockable: Security Sector NOT Programmed or Protected at the Factory

Whenthesecurityfeatureisnotrequired,thesecurityregioncanactasanextramemoryspace.

Securitysiliconsectorcanalsobeprotectedbytwomethods.Notethatoncethesecuritysiliconsectorispro-tected,thereisnowaytounprotectthesecuritysiliconsectorandthecontentofitcannolongerbealtered.

Thefirstmethodistowriteathree-cyclecommandofEnterSecurityRegion,andthenfollowthesectorgroupprotectalgorithmasillustratedinFigure14,exceptthatRESET#pinmayateitherVihorVhv.

Theothermethod is towrite a three-cycle commandofEnterSecurityRegion, and then follow thealternatemethodofsectorprotectwithA9,OE#atVhv.

Afterthesecuritysiliconislockedandverified,systemmustwriteExitSecuritySectorRegion,gothroughapow-ercycle,orissueahardwareresettoreturnthedevicetoreadnormalarraymode.

DATA PROTECTION

Toavoidaccidentalerasureorprogrammingofthedevice,thedeviceisautomaticallyresettoreadarraymodeduringpowerup.Besides,onlyaftersuccessfulcompletionofthespecifiedcommandsetswillthedevicebeginitseraseorprogramoperation.

Otherfeaturestoprotectthedatafromaccidentalalternationaredescribedasfollowed.

LOW VCC WRITE INHIBIT

ThedevicerefusestoacceptanywritecommandwhenVccislessthanVlko.Thispreventsdatafromspuriouslyaltered.ThedeviceautomaticallyresetsitselfwhenVccislowerthanVlkoandwritecyclesareignoreduntilVccisgreaterthanVlko.SystemmustprovidepropersignalsoncontrolpinsafterVccislargerthanVlkotoavoidun-intentionalprogramoreraseoperation

WRITE PULSE "GLITCH" PROTECTION

CE#,WE#,OE#pulsesshorter than5nsaretreatedasglitchesandwillnotberegardedasaneffectivewritecycle.

LOGICAL INHIBIT

AvalidwritecyclerequiresbothCE#andWE#atVilwithOE#atVih.WritecycleisignoredwheneitherCE#atVih,WE#aVih,orOE#atVil.

POWER-UP SEQUENCE

Uponpowerup,MX29LV640ET/Bisplacedinreadarraymode.Furthermore,programoreraseoperationwillbeginonlyaftersuccessfulcompletionofspecifiedcommandsequences.

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POWER-UP WRITE INHIBIT

WhenWE#,CE#isheldatVilandOE#isheldatVihduringpowerup,thedeviceignoresthefirstcommandontherisingedgeofWE#.

POWER SUPPLY DECOUPLING

A0.1uFcapacitorshouldbeconnectedbetweentheVccandGNDtoreducethenoiseeffect.

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TABLE 3. MX29LV640E T/B COMMAND DEFINITIONS

Command ReadMode

ResetMode

AutomaticSelect EnterSecuritySectorRegion

EnableManifactureID DeviceID SectorFactory SectorProtectVerify

Word Byte Word Byte Word Byte Word Byte Word Byte1stBusCycle

Addr Addr XXX 555 AAA 555 AAA 555 AAA 555 AAA 555 AAAData Data F0 AA AA AA AA AA AA AA AA AA AA

2ndBusCycle

Addr 2AA 555 2AA 555 2AA 555 2AA 555 2AA 555Data 55 55 55 55 55 55 55 55 55 55

3rdBusCycle

Addr 555 AAA 555 AAA 555 AAA 555 AAA 555 AAAData 90 90 90 90 90 90 90 90 88 88

4thBusCycle

Addr X00 X00 X01 X02 X03 X06 (Sector)X02

(Sector)X04

Data C2h C2h ID ID 88/08 88/08 00/01 00/015thBusCycle

Addr Data

6thBusCycle

Addr Data

Command

ExitSecuritySector Program ChipErase SectorErase CFIRead Erase

SuspendEraseResume

Word Byte Word Byte Word Byte Word Byte Word Byte Byte/Word

Byte/Word

1stBusCycle

Addr 555 AAA 555 AAA 555 AAA 555 AAA 55 AA XXX XXXData AA AA AA AA AA AA AA AA 98 98 B0 30

2ndBusCycle

Addr 2AA 555 2AA 555 2AA 555 2AA 555Data 55 55 55 55 55 55 55 55

3rdBusCycle

Addr 555 AAA 555 AAA 555 AAA 555 AAAData 90 90 A0 A0 80 80 80 80

4thBusCycle

Addr XXX XXX Addr Addr 555 AAA 555 AAAData 00 00 Data Data AA AA AA AA

5thBusCycle

Addr 2AA 555 2AA 555Data 55 55 55 55

6thBusCycle

Addr 555 AAA Sector SectorData 10 10 30 30

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RESET

Inthefollowingsituations,executingresetcommandwillresetdevicebacktoreadarraymode:• Amongerasecommandsequence(beforethefullcommandsetiscompleted)• Sectorerasetime-outperiod• Erasefail(whileQ5ishigh)• Amongprogramcommandsequence(beforethefullcommandset iscompleted,erase-suspendedprogramincluded)

• Programfail(whileQ5ishigh,anderase-suspendedprogramfailisincluded)• ReadsiliconIDmode• Sectorprotectverify• CFImode

Whiledeviceisatthestatusofprogramfailorerasefail(Q5ishigh),usermustissueresetcommandtoresetdevicebacktoreadarraymode.WhilethedeviceisinreadsiliconIDmode,sectorprotectverifyorCFImode,usermustissueresetcommandtoresetdevicebacktoreadarraymode.

Whenthedeviceisintheprogressofprogramming(notprogramfail)orerasing(noterasefail),devicewillig-noreresetcommand.

AUTOMATIC SELECT COMMAND SEQUENCE

AutomaticSelectmodeisusedtoaccessthemanufacturerID,deviceIDandtoverifywhetherornotsecuredsiliconislockedandwhetherornotasectorisprotected.Theautomaticselectmodehasfourcommandcycles.Thefirst twoareunlockcycles,andfollowedbyaspecificcommand.Thefourthcycle isanormalreadcycle,andusercanreadatanyaddressanynumberoftimeswithoutenteringanothercommandsequence.TheresetcommandisnecessarytoexittheAutomaticSelectmodeandbacktoreadarray.Thefollowingtableshowstheidentificationcodewithcorrespondingaddress.

ThereisanalternativemethodtothatshowninTable2,whichisintendedforEPROMprogrammersandrequiresVhvonaddressbitA9.

Address Data(Hex) Representation

ManufacturerID Word X00 C2Byte X00 C2

DeviceID Word X01 22C9/22CB Top/BottomBootSectorByte X02 C9/CB Top/BottomBootSector

SecuredSilicon Word X03 88/08 Factorylocked/unlockedByte X06 88/08 Factorylocked/unlocked

SectorProtectVerify Word (Sectoraddress)X02 00/01 Unprotected/protectedByte (Sectoraddress)X04 00/01 Unprotected/protected

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AUTOMATIC PROGRAMMING

TheMX29LV640ET/BcanprovidetheuserprogramfunctionbytheformofByte-ModeorWord-Mode.AslongastheusersentertherightcycledefinedintheTable.3(including2unlockcyclesandA0H),anydatauserinputswillautomaticallybeprogrammedintothearray.

Once theprogram function is executed, the internalwrite state controllerwill automatically execute thealgo-rithmsand timingsnecessary forprogramandverification,which includesgeneratingsuitableprogrampulse,verifyingwhetherthethresholdvoltageoftheprogrammedcellishighenoughandrepeatingtheprogrampulseifanyofthecellsdoesnotpassverification.Meanwhile,theinternalcontrolwillprohibittheprogrammingtocellsthatpassverificationwhiletheothercellsfailinverificationinordertoavoidover-programming.Withtheinternalwritestatecontroller,thedevicerequirestheusertowritetheprogramcommandanddataonly.

Programmingwillonlychangethebitstatusfrom"1"to"0".Thatistosay,itisimpossibletoconvertthebitstatusfrom"0"to"1"byprogramming.Meanwhile,theinternalwriteverificationonlydetectstheerrorsofthe"1"thatisnotsuccessfullyprogrammedto"0".

Anycommandwrittentothedeviceduringprogrammingwillbeignoredexcepthardwarereset,whichwilltermi-natetheprogramoperationafteraperiodoftimenomorethanTready.Whentheembeddedprogramalgorithmiscompleteortheprogramoperationisterminatedbyhardwarereset,thedevicewillreturntothereadingarraydatamode.

ThetypicalchipprogramtimeatroomtemperatureoftheMX29LV640ET/Bislessthan45seconds.

Whentheembeddedprogramoperationisongoing,usercanconfirmiftheembeddedoperationisfinishedornotbythefollowingmethods:

*1:Thestatus"inprogress"meansbothprogrammodeanderase-suspendedprogrammode.*2:RY/BY#isanopendrainoutputpinandshouldbeweaklyconnectedtoVDDthroughapull-upresistor.*3:Whenanattemptismadetoprogramaprotectedsector,Q7willoutputitscomplementdataorQ6continues

totoggleforabout1usorlessandthedevicereturnstoreadarraystatewithoutprogramingthedataintheprotectedsector.

Status Q7 Q6 Q5 RY/BY#*2Inprogress*1 Q7# togging 0 0

Finished Q7 Stoptoggling 0 1

Exceedtimelimit Q7# Toggling 1 0

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SECTOR ERASE

SectorEraseistoeraseallthedatainasectorwith"1"and"0"asall"1".Itrequiressixcommandcyclestois-sue.Thefirsttwocyclesare"unlockcycles",thethirdoneisaconfigurationcycle,thefourthandfiftharealso"unlockcycles"andthesixthcycleisthesectorerasecommand.Afterthesectorerasecommandsequenceisissued, there isa time-outperiodof50uscounted internally.During the time-outperiod,additional sectorad-dressandsectorerasecommandcanbewrittenmultiply.Onceuserentersanothersectorerasecommand,thetime-outperiodof50usisrecounted.Ifuserentersanycommandotherthansectoreraseorerasesuspenddur-ingtime-outperiod,theerasecommandwouldbeabortedandthedeviceisresettoreadarraycondition.Thenumberofsectorscouldbefromonesectortoallsectors.Aftertime-outperiodpassingby,additionalerasecom-mandisnotacceptedanderaseembeddedoperationbegins.

Duringsectorerasing,allcommandswillnotbeacceptedexcepthardwareresetanderasesuspendandusercancheckthestatusaschiperase.

CHIP ERASE

ChipEraseistoeraseallthedatawith"1"and"0"asall"1".Itneeds6cyclestowritetheactionin,andthefirsttwocyclesare"unlock"cycles,thethirdoneisaconfigurationcycle,thefourthandfiftharealso"unlock"cycles,andthesixthcycleisthechiperaseoperation.

Duringchiperasing,allthecommandswillnotbeacceptedexcepthardwareresetortheworkingvoltageistoolowthatchiperasewillbeinterrupted.AfterChipErase,thechipwillreturntothestateofReadArray.

Note :1.ThestatusQ3isthetime-outperiodindicator.WhenQ3=0,thedeviceisintime-outperiodandisacceptibletoanothersectoraddresstobeerased.WhenQ3=1,thedeviceisineraseoperationandonlyerasesus-pendisvalid.

Whentheembeddedchiperaseoperationisongoing,usercanconfirmiftheembeddedoperationisfinishedornotbythefollowingmethods:

Status Q7 Q6 Q5 Q2 RY/BY#Inprogress 0 Togging 0 Toggling 0

Finished 1 Stoptoggling 0 1 1

Exceedtimelimit 0 Toggling 1 Toggling 0

Whentheembeddederaseoperationisongoing,usercanconfirmiftheembeddedoperationisfinishedornotbythefollowingmethods:

Status Q7 Q6 Q5 Q3 Q2 RY/BY#*2Time-outperiod 0 Togging 0 0 Toggling 0

Inprogress 0 Togging 0 1 Toggling 0

Finished 1 Stoptoggling 0 1 1 1

Exceedtimelimit 0 Toggling 1 1 Toggling 0

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When thedevicehassuspendederasing,user canexecute thecommandsetsexcept sectoreraseandchiperase,suchasreadsiliconID,sectorprotectverify,program,CFIqueryanderaseresume.

SECTOR ERASE RESUME

Sectoreraseresumecommandisvalidonlywhenthedeviceisinerasesuspendstate.Aftereraseresume,usercanissueanothererasesuspendcommand,butthereshouldbea4msintervalbetweeneraseresumeandthenexterasesuspend. If user issue infinite suspend-resume loop,or suspend-resumeexceeds1024 times, thetimeforerasingwillincrease.

SECTOR ERASE SUSPEND

Duringsectorerasure,sectorerasesuspendistheonlyvalidcommand.Ifuserissueerasesuspendcommandinthetime-outperiodofsectorerasure,devicetime-outperiodwillbeover immediatelyandthedevicewillgobacktoerase-suspendedreadarraymode.Ifuserissueerasesuspendcommandduringthesectoreraseisbe-ingoperated,devicewillsuspendtheongoingeraseoperation,andaftertheTready1(<=20us)suspendfinishesandthedevicewillentererase-suspendedreadarraymode.Usercanjudgeifthedevicehasfinishederasesus-pendthroughQ6,Q7,andRY/BY#.

Afterdevicehasenterederase-suspendedreadarraymode,usercanreadothersectorsnotaterasesuspendbythespeedofTaa;whilereadingthesectorinerase-suspendmode,devicewilloutputitsstatus.Wheneverasuspendcommandisissued,usermustissuearesumecommandandcheckQ6togglebitstatus,beforeissueanothererasecommand.Thesystemcanusethestatusregisterbitsshowninthefollowingtabletodeterminethecurrentstateofthedevice:

2.RY/BY#isopendrainoutputpinandshouldbeweaklyconnectedtoVDDthroughapull-upresistor.3.Whenanattemptismadetoeraseaprotectedsector,Q7willoutputitscomplementdataorQ6continuestotogglefor100usorlessandthedevicereturnedtoreadarraystatuswithouterasingthedataintheprotectedsector.

4.Q2isalocalizedindicatorshowingaspecifiedsectorisundergoingeraseoperationornot.Q2toggleswhenuserreadsataddresseswherethesectorsareactivelybeingerased(inerasemode)ortobeerased(inerasesuspendmode).Whenasectorhasbeencompletelyerased,Q2stopstogglingatthesectorevenwhenthedeviceisstillineraseoperationforremainingselectedsectors.Atthatcircumstance,Q2willstilltogglewhendeviceisreadatanyothersectorthatremainstobeerased.

Status Q7 Q6 Q5 Q3 Q2 RY/BY#Erasesuspendreadinerasesuspendedsector 1 Notoggle 0 N/A toggle 1

Erasesuspendreadinnon-erasesuspendedsector Data Data Data Data Data 1

Erasesuspendprograminnon-erasesuspendedsector Q7# Toggle 0 N/A N/A 0

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Table 4-1. CFI mode: Identification Data Values(Allvaluesinthesetablesareinhexadecimal)

Table 4-2. CFI Mode: System Interface Data Values

QUERY COMMAND AND COMMON FLASH INTERFACE (CFI) MODE

MX29LV640ET/BfeaturesCFImode.Hostsystemcanretrievetheoperatingcharacteristics,structureandven-dor-specifiedinformationsuchasidentifyinginformation,memorysize,byte/wordconfiguration,operatingvoltag-esandtiminginformationofthisdevicebyCFImode.ThedeviceenterstheCFIQuerymodewhenthesystemwritestheCFIQuerycommand,98H,toaddress55H/AAH(dependingonWord/Bytemode)anytimethedeviceisreadytoreadarraydata.ThesystemcanreadCFIinformationattheaddressesgiveninTable4.Aresetcom-mandisrequiredtoexitCFImodeandgobacktoreadyarraymodeorerasesuspendmode.ThesystemcanwritetheCFIQuerycommandonlywhenthedeviceisinreadmode,erasesuspend,standbymodeorautomaticselectmode.

DescriptionAddress (h) (Word Mode)

Address (h)(Byte Mode)

Data (h)

Query-uniqueASCIIstring"QRY"

10 20 0051

11 22 0052

12 24 0059

PrimaryvendorcommandsetandcontrolinterfaceIDcode13 26 0002

14 28 0000

Addressforprimaryalgorithmextendedquerytable15 2A 0040

16 2C 0000

AlternatevendorcommandsetandcontrolinterfaceIDcode17 2E 0000

18 30 0000

Addressforalternatealgorithmextendedquerytable19 32 0000

1A 34 0000

Description Address (h) (Word Mode)

Address (h)(Byte Mode) Data (h)

Vccsupplyminimumprogram/erasevoltage 1B 36 0027

Vccsupplymaximumprogram/erasevoltage 1C 38 0036

VPPsupplyminimumprogram/erasevoltage 1D 3A 0000

VPPsupplymaximumprogram/erasevoltage 1E 3C 0000

Typicaltimeoutpersingleword/bytewrite,2nus 1F 3E 0004

Typicaltimeoutformaximum-sizebufferwrite,2nus 20 40 0000

Typicaltimeoutperindividualblockerase,2nms 21 42 000A

Typicaltimeoutforfullchiperase,2nms 22 44 0000

Maximumtimeoutforword/bytewrite,2ntimestypical 23 46 0005

Maximumtimeoutforbufferwrite,2ntimestypical 24 48 0000

Maximumtimeoutperindividualblockerase,2ntimestypical 25 4A 0004

Maximumtimeoutforchiperase,2ntimestypical 26 4C 0000

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Table 4-3. CFI Mode: Device Geometry Data Values

DescriptionAddress (h)(Word Mode)

Address (h)(Byte Mode)

Data (h)

Devicesize=2ninnumberofbytes 27 4E 0017

Flashdeviceinterfacedescription(02=asynchronousx8/x16)28 50 0002

29 52 0000

Maximumnumberofbytesinbufferwrite=2n(notsupport)2A 54 0000

2B 56 0000

NumberoferaseregionswithindeviceIndexforEraseBankArea1[2E,2D]=#ofsame-sizesectorsinregion1-1[30,2F]=sectorsizeinmultiplesof256-bytes

2C 58 0002

2D 5A 0007

2E 5C 0000

2F 5E 0020

30 60 0000

IndexforEraseBankArea2

31 62 007E

32 64 0000

33 66 0000

34 68 0001

IndexforEraseBankArea3

35 6A 0000

36 6C 0000

37 6E 0000

38 70 0000

IndexforEraseBankArea4

39 72 0000

3A 74 0000

3B 76 0000

3C 78 0000

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Table 4-4. CFI Mode: Primary Vendor-Specific Extended Query Data Values

DescriptionAddress (h)(Word Mode)

Address (h)(Byte Mode)

Data (h)

Query-Primaryextendedtable,uniqueASCIIstring,PRI40 80 005041 82 005242 84 0049

Majorversionnumber,ASCII 43 86 0031Minorversionnumber,ASCII 44 88 0031Unlockrecognizesaddress(0=recognize,1=don'trecognize) 45 8A 0000Erasesuspend(2=tobothreadandprogram) 46 8C 0002Sectorprotect(N=#ofsectors/group) 47 8E 0004Temporarysectorunprotect(1=supported) 48 90 0001Sectorprotect/Chipunprotectscheme 49 92 0004SimultaneousR/Woperation(0=notsupported) 4A 94 0000Burstmode(0=notsupported) 4B 96 0000Pagemode(0=notsupported) 4C 98 0000MinimumACC(acceleration)supply(0=notsupported),[D7:D4]forvolt,[D3:D0]for100mV 4D 9A 0095

MaximumACC (acceleration) supply (0=not supported), [D7:D4]forvolt,[D3:D0]for100mV 4E 9C 00A5

Top/Bottombootblockindicator02h=bottombootdevice03h=topbootdevice 4F 9E 0002/0003

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ABSOLUTE MAXIMUM STRESS RATINGS

OPERATING TEMPERATURE AND VOLTAGE

Note:1.Minimumvoltagemayundershootto-2Vduringtransitionandforlessthan20nsduringtransitions.2.MaximumvoltagemayovershoottoVcc+2Vduringtransitionandforlessthan20nsduringtransitions.

Commercial (C) Grade SurroundingTemperature(TA) 0°Cto+70°CIndustrial (I) Grade SurroundingTemperature(TA) -40°Cto+85°CVCC Supply Voltages VCC range +2.7Vto3.6V

SurroundingTemperaturewithBias -65oCto+125oCStorageTemperature -65oCto+150oC

VoltageRangeVCC -0.5Vto+4.0VRESET#,A9andOE# -0.5Vto+10.5VTheotherpins -0.5VtoVcc+0.5V

OutputShortCircuitCurrent(lessthanonesecond) 200mA

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DC CHARACTERISTICS

Symbol Description Min. Typ. Max. RemarkIilk InputLeak ± 1.0uA

Iilk9 A9Leak 35uA A9=10.5V

Iolk OutputLeak ± 1.0uA

Icr1 ReadCurrent(5MHz) 9mA 16mA CE#=Vil,OE#=Vih

Icr2 ReadCurrent(1MHz) 2mA 4mA CE#=Vil,OE#=Vih

Icw WriteCurrent 26mA 30mA CE#=Vil,OE#=Vih,WE#=Vil

Isb StandbyCurrent 5uA 15uA Vcc=Vccmax,otherpindisable

Isbr ResetCurrent 5uA 15uAVcc=Vccmax,Reset#enable,otherpindisable

Icp1 AcceleratedPgmCurrent,WP#/ACCpin(Word/Byte) 5mA 10mA CE#=Vil,OE#=Vih

Icp2 AcceleratedPgmCurrent,Vccpin(Word/Byte) 15mA 30mA CE#=Vil,OE#=Vih

Vil InputLowVoltage -0.5V 0.8V

Vih InputHighVoltage 0.7xVcc Vcc+0.3V

VhvVeryHighVoltageforhardwareProtect/Unprotect /Auto Select /TemporaryUnprotect/AcceleratedProgram

9.5V 10.5V

Vol OutputLowVoltage 0.45V Iol=4.0mA

Voh1 OuputHighVoltage 0.85xVcc Ioh1=-2mA

Voh2 OuputHighVoltage Vcc-0.4V Ioh2=-100uA

Vlko LowVccLock-outVoltage 2.3V 2.5V

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SWITCHING TEST CIRCUITS

TestConditionOutputLoad:1TTLgateOutputLoadCapacitance,CL:30pFRise/FallTimes:5nsIn/Outreferencelevels:1.5V

SWITCHING TEST WAVEFORMS

1.5V 1.5V

Test Points

3.0V

0.0VOUTPUTINPUT

R1=6.2KohmR2=2.7Kohm

TESTED DEVICE

DIODES=IN3064OR EQUIVALENT

CLR1

Vcc

0.1uFR2

+3.3V

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AC CHARACTERISTICS

*Note1:Sampledonly,not100%tested.

Symbol Description Min. Typ. Max. UnitTaa Validdataoutputafteraddress 70 nsTce ValiddataoutputafterCE#low 70 nsToe ValiddataoutputafterOE#low 30 nsTdf DataoutputfloatingafterOE#high(*Note1) 16 ns

Toh Outputholdtimefromtheearliestrisingedgeofaddress,CE#,OE# 0 ns

Trc Readperiodtime 70 nsTsrw LatencyBetweenReadandWriteoperation(*Note1) 45 nsTwc Writeperiodtime 70 nsTcwc Commandwriteperiodtime 70 nsTas Addresssetuptime 0 nsTah Addressholdtime 45 nsTds Datasetuptime 45 nsTdh Dataholdtime 0 nsTvcs Vccsetuptime 200 usTcs ChipenableSetuptime 0 nsTch Chipenableholdtime 0 nsToes Outputenablesetuptime 0 ns

Toeh OutputenableholdtimeRead 0 nsToggle&Data#Polling 10 ns

Tws WE#setuptime 0 nsTwh WE#holdtime 0 nsTcep CE#pulsewidth 35 nsTceph CE#pulsewidthhigh 30 nsTwp WE#pulsewidth 35 nsTwph WE#pulsewidthhigh 30 nsTbusy Program/EraseactivetimebyRY/BY# 70 nsTghwl Readrecovertimebeforewrite 0 nsTghel Readrecovertimebeforewrite 0 nsTwhwh1 Programoperation Byte 9 usTwhwh1 Programoperation Word 11 usTwhwh1 AccProgramoperation(Word/Byte) 7 usTwhwh2 SectorEraseOperation 0.7 secTbal SectorAddholdtime 50 us

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Figure 1. COMMAND WRITE OPERATION

Addresses

CE#

OE#

WE#

DIN

Tds

Tah

Data

Tdh

Tcs Tch

Tcwc

TwphTwpToes

Tas

Vih

Vil

Vih

Vil

Vih

Vil

Vih

Vil

Vih

Vil

VA

VA: Valid Address

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READ/RESET OPERATION

Figure 2. READ TIMING WAVEFORMS

Addresses

CE#

OE#

Taa

WE#

Vih

Vil

Vih

Vil

Vih

Vil

Vih

Vil

Voh

Vol

HIGH Z HIGH ZDATA Valid

ToeToeh Tdf

Tce

Trc

Outputs

Toh

ADD Valid

Tsrw

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Figure 3. RESET# TIMING WAVEFORM

AC CHARACTERISTICS

Trh

Trb1

Trp2

Trp1

Tready2

Tready1

RY/BY#

CE#, OE#

RESET#

Reset Timing NOT during Automatic Algorithms

Reset Timing during Automatic Algorithms

RY/BY#

CE#, OE#

Trb2

WE#

RESET#

Item Description Setup Speed UnitTrp1 RESET#PulseWidth(DuringAutomaticAlgorithms) MIN 10 us

Trp2 RESET#PulseWidth(NOTDuringAutomaticAlgorithms) MIN 500 ns

Trh RESET#HighTimeBeforeRead MIN 50 ns

Trb1 RY/BY#RecoveryTime(toCE#,OE#golow) MIN 0 ns

Trb2 RY/BY#RecoveryTime(toWE#golow) MIN 50 ns

Tready1 RESET#PINLow(DuringAutomaticAlgorithms)toReadorWrite MAX 20 us

Tready2 RESET#PINLow(NOTDuringAutomaticAlgorithms)toReadorWrite MAX 500 ns

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ERASE/PROGRAM OPERATION

Figure 4. AUTOMATIC CHIP ERASE TIMING WAVEFORM

Twc

Address

OE#

CE#

55h

2AAh SA

10h

InProgress Complete

VA VA

Tas Tah

SA: 555h for chip erase

Tghwl

Tch

Twp

Tds Tdh

Read StatusLast 2 Erase Command Cycle

Tbusy Trb

Tcs TwphWE#

Data

RY/BY#

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Figure 5. AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART

START

Write Data AAH Address 555H

Write Data 55H Address 2AAH

Write Data AAH Address 555H

Write Data 80H Address 555H

YES

NOData=FFh ?

Write Data 10H Address 555H

Write Data 55H Address 2AAH

Data# Polling Algorithm or Toggle Bit Algorithm

Auto Chip Erase Completed

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Figure 6. AUTOMATIC SECTOR ERASE TIMING WAVEFORM

Twc

Address

OE#

CE#

55h

2AAh SectorAddress 1

SectorAddress 0

30h

InProgress Complete

VA VA

30h

SectorAddress n

Tas

Tah

Tbal

Tghwl

Tch

Twp

Tds Tdh

Twhwh2

Read Status

Last 2 Erase Command Cycle

TbusyTrb

Tcs TwphWE#

Data

RY/BY#

30h

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Figure 7. AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART

START

Write Data AAH Address 555H

Write Data 55H Address 2AAH

Write Data AAH Address 555H

Write Data 80H Address 555H

Write Data 30H Sector Address

Write Data 55H Address 2AAH

Data# Polling Algorithm orToggle Bit Algorithm

Auto Sector Erase Completed

NOLast Sectorto Erase

YES

YES

NOData=FFh

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Figure 8. ERASE SUSPEND/RESUME FLOWCHART

START

Write Data B0H

Toggle Bit checking Q6 not toggled

ERASE SUSPEND

YES

NO

Write Data 30H

Continue Erase

Reading or Programming End

Read Array orProgram

AnotherErase Suspend ?

NO

YES

YES

NO

ERASE RESUME

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Figure 9. AUTOMATIC PROGRAM TIMING WAVEFORMS

Address

OE#

CE#

A0h

555h PA

PD Status DOUT

VA VA

Tas Tah

Tghwl

Tch

Twp

Tds Tdh

Twhwh1

Last 2 Read Status CycleLast 2 Program Command Cycle

TbusyTrb

Tcs TwphWE#

Data

RY/BY#

Figure 10. Accelerated Program Timing Diagram

WP#/ACC

250ns 250ns

Vhv(9.5V ~ 10.5V)

Vil or Vih Vil or Vih

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Figure 11. CE# CONTROLLED WRITE TIMING WAVEFORM

Address

OE#

CE#

A0h

555h PA

PD Status DOUT

VA VA

Tas Tah

Tghwl

Tcep

Tds Tdh

Twhwh1 or Twhwh2

Tbusy

Tceph

WE#

Data

RY/BY#

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Figure 12. AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART

START

Write Data AAH Address 555H

Write Data 55H Address 2AAH

Write Program Data/Address

Write Data A0H Address 555H

YES

Read Again Data:Program Data?

YES

Auto Program Completed

Data# Polling Algorithm orToggle Bit Algorithm

next address

Last Word to beProgramed

No

No

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SECTOR GROUP PROTECT/CHIP UNPROTECT

Figure 13. SECTOR GROUP PROTECT/CHIP UNPROTECT WAVEFORM (RESET# Control)

150us: Sector Protect15ms: Chip Unprotect1us

Vhv

Vih

Data

SA, A6A1, A0

CE#

WE#

OE#

VA VA VA

Status

VA: valid address

40h60h60h

Verification

RESET#

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Figure 14-1. IN-SYSTEM SECTOR GROUP PROTECT WITH RESET#=Vhv

START

Retry count=0

RESET#=Vhv

Wait 1us

Write Sector Addresswith [A6,A1,A0]:[0,1,0]

data: 60h

Write Sector Addresswith [A6,A1,A0]:[0,1,0]

data: 40h

Read at Sector Addresswith [A6,A1,A0]:[0,1,0]

Wait 150us

Reset PLSCNT=1

Temporary Unprotect Mode

RESET#=Vih

Write RESET CMD

Sector Protect Done

Device fail

Temporary Unprotect Mode

Retry Count +1

First CMD=60h?

Data=01h?Retry Count=25?

Yes

YesYes

Yes

No

No

No

No

Protect anothersector?

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Figure 14-2. CHIP UNPROTECT ALGORITHMS WITH RESET#=Vhv

Write [A6,A1,A0]:[1,1,0]data: 60h

Write [A6,A1,A0]:[1,1,0]data: 40h

Read [A6,A1,A0]:[1,1,0]

Wait 15ms

Temporary Unprotect

Write reset CMD

Chip Unprotect Done

Retry Count +1

Device fail

All sectorsprotected?

Data=00h?Retry Count=1000?

YesYes

No

No

Yes

Protect All Sectors

START

Retry count=0

RESET#=Vhv

Wait 1us

Temporary Unprotect

First CMD=60h?

Yes

No

No

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Figure 15. TEMPORARY SECTOR GROUP UNPROTECT WAVEFORMS

Table 5. TEMPORARY SECTOR GROUP UNPROTECT

RESET#

CE#

WE#

RY/BY#

Trpvhh

10VVhv

0 or Vih Vil or Vih

Tvhhwl

Trpvhh

Program or Erase Command Sequence

Parameter Alt Description Condition Speed UnitTrpvhh Tvidr RESET#RiseTimetoVhvandVhvFallTimetoRESET# MIN 500 ns

Tvhhwl Trsp RESET#VhvtoWE#Low MIN 4 us

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Figure 16. TEMPORARY SECTOR GROUP UNPROTECT FLOWCHART

Start

Apply Reset# pin Vhv Volt

Enter Program or Erase Mode

(1) Remove Vhv Volt from Reset#(2) RESET# = Vih

Completed Temporary SectorUnprotected Mode

Mode Operation Completed

Notes:1.TemporaryunprotectallprotectedsectorsVhv=9.5~10.5V.2.Afterleavingtemporaryunprotectmode,thepreviouslyprotectedsectorsareagainprotected.

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Figure 17. SILICON ID READ TIMING WAVEFORM

Taa

Tce

Taa

Toe

Toh Toh

Tdf

DATA OUT

C2h C9h (TOP boot) CBh (Bottom boot)

Vhv

Vih

VilA9

ADD

CE#

A1

OE#

WE#

A0

DATA OUT

DATAQ0-Q7

(Byte Mode)

Vih

Vil

Vih

Vil

Vih

Vil

Vih

Vil

Vih

Vil

Vih

Vil

Vih

Vil

DATA OUT

00C2h 22C9h (TOP boot) 22CBh (Bottom boot)

DATA OUTDATA

Q0-Q15/A-1(Word Mode)

Vih

Vil

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WRITE OPERATION STATUS

Figure 18. DATA# POLLING TIMING WAVEFORMS (DURING AUTOMATIC ALGORITHMS)

Tdf

Tce

Tch

Toe

Toeh

Toh

CE#

OE#

WE#

Q7

Q0-Q6

RY/BY#

Tbusy

Status Data Status Data

Complement Complement True Valid Data

Taa

Trc

Address VAVA

High Z

High ZValid DataTrue

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Figure 19. DATA# POLLING ALGORITHM

Read Q7~Q0 at valid address(Note 1)

Read Q7~Q0 at valid address

Start

Q7 = Data# ?

Q5 = 1 ?

Q7 = Data# ?(Note 2)

FAIL Pass

No

No

No

Yes

Yes

Yes

Notes:1.Forprogramming,validaddressmeasprogramaddress.Forerasing,validaddressmeaserasesectorsaddress.2.Q7shouldberecheckedevenQ5="1"becauseQ7maychangesimultaneouslywithQ5.

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Figure 20. TOGGLE BIT TIMING WAVEFORMS (DURING AUTOMATIC ALGORITHMS)

Tdf

Tce

Tch

Toe

Toeh

Taa

Trc

Toh

Address

CE#

OE#

WE#

Q6/Q2

RY/BY#

Tbusy

Valid Status

(first read)

Valid Status

(second read) (stops toggling)

Valid Data

VA VAVA

VA : Valid Address

VA

Valid Data

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Figure 21. TOGGLE BIT ALGORITHM

Notes:1.Readtogglebittwicetodeterminewhetherornotitistoggling.2.RechecktogglebitbecauseitmaystoptogglingasQ5changesto"1".

Read Q7-Q0 Twice

Q5 = 1?

Read Q7~Q0 Twice

PGM/ERS failWrite Reset CMD PGM/ERS Complete

Q6 Toggle ?

Q6 Toggle ?

NO

(Note 1)

YES

NO

NO

YES

YES

Start

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Figure 22. BYTE# TIMING WAVEFORM FOR READ OPERATIONS (BYTE# switching from byte mode to word mode)

AC CHARACTERISTICS

WORD/BYTE CONFIGURATION (BYTE#)

Tfhqv

Telfh

DOUT(Q0-Q7)

DOUT(Q0-Q14)

VA DOUT(Q15)

CE#

OE#

BYTE#

Q0~Q14

Q15/A-1

Parameter DescriptionSpeed

Unit70

Telfl/Telfh CE#toBYTE#fromL/H MAX 5 ns

Tflqz BYTE#fromLtoOutputHiz MAX 30 ns

Tfhqv BYTE#fromHtoOutputActive MIN 70 ns

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RECOMMENDED OPERATING CONDITIONS

At Device Power-Up

ACtimingillustratedinFigureAisrecommendedforthesupplyvoltagesandthecontrolsignalsatdevicepower-up.Ifthetiminginthefigureisignored,thedevicemaynotoperatecorrectly.

Figure A. AC Timing at Device Power-Up

Vcc

ADDRESS

CE#

WE#

OE#

DATA

Tvr

TaaTr or Tf Tr or Tf

TceTf

Vcc(min)

GND

Vih

Vil

Vih

Vil

Vih

Vil

Vih

Vil

Vih

Vil

Voh High ZVol

WP#/ACC

ValidOuput

ValidAddress

Tvcs

Tr

ToeTfTr

Symbol Parameter Min. Max. UnitTvr VccRiseTime 20 500000 us/V

Tr InputSignalRiseTime 20 us/V

Tf InputSignalFallTime 20 us/V

Tvcs VccSetupTime 200 us

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LATCH-UP CHARACTERISTICS

ERASE AND PROGRAMMING PERFORMANCE

TSOP PIN CAPACITANCE

Notes:1. Typicalprogramanderasetimesassumethefollowingconditions:25°C,3.0VVCC.Programmingspecifica-

tionsassumecheckboarddatapattern.2.MaximumvaluesaremeasuredatVCC=3.0V,worstcasetemperature.Maximumvaluesarevaliduptoand

including100,000program/erasecycles.3.Word/Byteprogrammingspecification isbaseduponasingleword/byteprogrammingoperationnotutilizing

thewritebuffer.4.Erase/ProgramcyclescomplywithJEDECJESD-47E&A117Astandard.

MIN. MAX.InputVoltagedifferencewithGNDonWP#/ACC,A9,OE,Reset#pins -1.0V 10.5V

InputVoltagedifferencewithGNDonallnormalpinsinput -1.0V Vccx1.5V

InputCurrentPulse -100mA +100mA

Allpinsincluded.Testconditions:Vcc=3.0V,onepinpertesting

Parameter Symbol Parameter Description Test Set TYP MAX UNITCIN2 ControlPinCapacitance VIN=0 7.5 9 pF

COUT OutputCapacitance VOUT=0 8.5 12 pF

CIN InputCapacitance VIN=0 6 7.5 pF

PARAMETERLIMITS

UNITSMIN. TYP. MAX.

ChipEraseTime 45 65 sec

SectorEraseTime 0.7 2 sec

Erase/ProgramCycles 100,000 Cycles

ChipProgrammingTimeByteMode 50 160 sec

WordMode 45 140 sec

AcceleratedByte/WordProgramTime 7 210 us

WordProgramTime 11 360 us

ByteProgrammingTime 9 300 us

DATA RETENTIONPARAMETER Condition Min. Max. UNITDataretention 55˚C 20 years

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ORDERING INFORMATION

PART NO. ACCESS TIME (ns)

Ball Pitch/Ball size PACKAGE Remark

MX29LV640ETXEI-70G 70 0.8mm/0.4mm 48BallTFBGA Pb-freeMX29LV640EBXEI-70G 70 0.8mm/0.4mm 48BallTFBGA Pb-freeMX29LV640ETTI-70G 70 48PinTSOP(NormalType) Pb-freeMX29LV640EBTI-70G 70 48PinTSOP(NormalType) Pb-free

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PART NAME DESCRIPTION

MX 29 LV 70E T T I GOPTION:G: Lead-free package

SPEED:70: 70ns

TEMPERATURE RANGE:I: Industrial (-40°C to 85°C)

PACKAGE:T: TSOPX: FBGA (CSP)

BOOT BLOCK TYPE:T: Top BootB: Bottom Boot

REVISION:E

DENSITY & MODE:640: 64M x8/x16 Boot Block

LV: 3V TYPE:

DEVICE:29:Flash

640

XE - 0.4mm Ball

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PACKAGE INFORMATION

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REVISION HISTORY

Revision No. Description Page Date1.0 1.Removed"AdvancedInformation" P1 OCT/21/2008 2.Removed90nsoption P1,31,53,56 P57 3.Revisedhighvoltagevaluefrom11.5Vto10.5V P28,55 4.ChangedTcepvaluefrom45ns(min.)to35ns(min.) P311.1 1.ModifiedTable1.BLOCKSTRUCTURE:SA44,45 P6 MAR/12/20091.2 1. AddedTsrwparameter P31,33 MAY/19/2009 2.Changeddataretentionfrom10yearsto20years P1,551.3 1.ModifiedFactorylocked/unlockedfrom98/18to88/08 P14,20,21 JUL/07/2009

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