mmdt2222a dual npn transistor...0.1 1 10 100 0 100 200 300 400 500 0246810 12 0.00 0.05 0.10 0.15...
TRANSCRIPT
Features
Schematic Diagram
■
SOT-363
Ideal for medium power amplification and switching
Rating Unit
75 V40 V
6 V
600 mA
200 mW
-55 to +150
Symbol
VCBO
VCEO
VEBO
PC
TJ
TSTG
Junction Temperature
Storage Temperature
Parameter
Collect-Base Voltage Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continous
Collector Power Dissipation
1/5
Absolute Maximum Ratings (TA=25°C unless otherwise noted）
°C
°C
MMDT2222A Dual NPN Transistor
IC
■ Ultra-small surface mount package
■ Complementary PNP type available MMDT2907A
-55 to +150
Parameter Symbol Min Max Unit
Collector-base Breakdown Voltage V(BR)CBO 75 -- V40 --
6 --
-- 10
-- 10
-- 10
35 --
50 --
Electrical Characteristics (TA=25°C unless otherwise noted）
Test Condition
IC=10µA, IE=0
VCB=60V, IE=0
VCE=10V, IC=1mA
Collector-emitter Breakdown Voltage V(BR)CEO
V(BR)EBOEmitter-base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
ICBO
ICEX
Emitter Cut-off Current IEBO
DC Current Gain
Collector-emitter Saturation Voltage
Base-emitter Saturation Voltage
Transition Frequency
Output Capacity
Input Capacity
Noise Figure
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
hFE(6)
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=1V, IC=150mA
VCE=10V, IC=0.1mA
Switching Characteristics Parameter Symbol Min Max Unit
Delay Time td -- 10 ns
-- 25 ns
-- 225 ns
-- 60 ns
Test Condition
Rise Time tr
tSStorage Time
Fall Time tf
2/5
IC=10mA, IB=0
IE=10µA, IC=0
VCB=60V, IEB(0ff)=3V
VEB=3V, IC=0
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
Cib
NF
Vcc=30V, Ic=150mA, VBE(Off)=0.5V, IB1=15mA
Vcc=30V, Ic=150mA, IB1=-IB2=15mA
75
100
40
35
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=20V, IC=20mA, f=100MHz
VCB=10V, IE=0, f=1MHz
VEB=0.5V, IC=0, f=1MHz
VCE=10V, IC=100µA, f=1KHz, RS=1kΩ
--
--
0.6
--
300
--
--
--
--
8
25
4
pF
pF
dB
MHz
0.3
1
1.2
2
--
300
--
--
V
V
V
V
--
--
--
--
nA
nA
nA
V
V
----
MMDT2222A Dual NPN Transistor
0.1 1 10 1000
100
200
300
400
500
20 4 86 10 120.00
0.05
0.10
0.15
0.20
0.25
COMMON EMITTERV
CE=10V
600
IC
Ta=25℃
Ta=100℃
DC
CU
RR
EN
T G
AIN
h
FE
COLLECTOR CURRENT IC (mA)
hFE
— —
COLLECTOR-EMITTER VOLTAGE VCE
(V)
VCEsat
—— IC
Static Charact eristic
1mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
IB=0.1mA
COMMON EMITTERT
a=25℃
CO
LLE
CT
OR
CU
RR
EN
T
I C
(A
)
VBEsat
—— IC
1 10 1000.0
0.1
0.2
0.3
0.4
0.5
1 10 1000.0
0.4
0.8
1.2
600
β=10
Ta=100℃
Ta=25℃
CO
LLE
CT
OR
-EM
ITT
ER
SA
TU
RA
TIO
NV
OLT
AG
E
VC
Esa
t (V
)
COLLECTOR CURRENT IC (mA)
600
β=10
Ta=100℃
Ta=25℃
BA
SE
-EM
ITT
ER
SA
TU
RA
TIO
NV
OLT
AG
E
VB
Esa
t (
V)
COLLECTOR CURRENT IC
(mA)
0.1 101
10
100
0.0 0.2 0.4 0.6 0.8 1.00.1
1
10
100
f=1MHzIE=0/ I
C=0
Ta=25℃
20
Cob
/ Cib — — V
CB/ V
EB
Cob
Cib
CA
PA
CIT
AN
CE
C
(
pF)
1
REVERSE VOLTAGE V (V)
IC — — V
BE
COMMON EMITTERV
CE=10V
600
Ta=100℃
Ta=25℃
CO
LLE
CT
OR
CU
RR
EN
T
I C
(m
A)
BASE-EMMITER VOLTAGE VBE
(V)
3/5
MMDT2222A Dual NPN Transistor
Typical Characteristics Curves (TA = 25°C unless otherwise noted)
0 25 50 75 100 125 1500
100
200
300
10010
Pc — — T
a
CO
LLE
CT
OR
PO
WE
R D
ISS
IPA
TIO
N P
c
(mW
)
AMBIENT TEMPERATURE Ta (℃)
80
500
COMMON EMITTERV
CE=20V
Ta=25℃
TR
AN
ST
ION
FR
EQ
UE
NC
Y
f T
(M
Hz)
COLLECTOR CURRENT I C (mA)
fT — — IC
4/5
MMDT2222A Dual NPN Transistor
Typical Characteristics Curves (TA = 25°C unless otherwise noted)
Package Outline Dimensions SOT-363
Doc.USMMDT2222AxSC2.0www.goodarksemi.com 5/5
Recommended Pad Layout
Note:1. Controlling dimension:in millieters2. General tolerance:0.05mm3. The pad layout is for reference purpose only
Min Max Min MaxA 0.900 1.100 0.035 0.043
A1 0.000 0.100 0.000 0.004A2 0.900 1.000 0.035 0.039b 0.150 0.350 0.006 0.014c 0.100 0.150 0.004 0.006D 2.000 2.200 0.079 0.087E 1.150 1.350 0.045 0.053
E1 2.150 2.400 0.085 0.094e
e1 1.200 1.400 0.047 0.055L
L1 0.260 0.460 0.010 0.018θ 0° 8° 0° 8°
0.525 REF 0.021 REF
Symbol Dimensions In Millimeters Dimensions In Inches
0.650 TYP 0.026 TYP
MMDT2222A Dual NPN Transistor