methods of defect inspection and detection for copper cmp · class 31 med multiple to low spots...
TRANSCRIPT
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Cabot Microelectronics - Slide 0
Methods Of Defect Inspection and Detection For Copper
CMPChristopher Hawes, Defect Metrology EngineerShumin Wang, Copper Development Manager
Maria Peterson, Global OEM ManagerCabot Microelectronics
Ray Campbell, Senior Applications EngineerKLA-Tencor
Presentation given at Semicon China, 3/18/04 and CMPUG 5/5/04
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Cabot Microelectronics - Slide 1
Outline
• Project goal– Defect reduction, a collaborative effort by
consumables and equipment companies• Motivation
– Industry trend for reduced defects as technology nodes shrink
• Application of defect inspection– Copper slurry– Barrier slurry
• Summary
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Cabot Microelectronics - Slide 2
Project Goal Equipment and Consumables companies will jointly develop methodology for reducing CMP induced defectivity.
Why is (defect) methodology development important?
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Critical D
efect Size (nm)
• As feature size is reduced, what is considered a tolerable defect becomes intolerable.
• Generally speaking, intolerable defects are greater than half the feature size. For a 0.13 µm line that would be any defect greater than .065 µm (160 nm) in size.
Source: ITRS Roadmap
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Cabot Microelectronics - Slide 3
• We understand that detection tools have to constantly improve to keep up with industry demands, but if there is not an understanding of how to properly utilize the tool, the data collected is misleading or incorrect.
Understanding how to detect, classify, and eliminate defects is extremely important to CMC and KLA-Tencor.
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Cabot Microelectronics - Slide 4
Terms Defined
• AIT (Advanced Inspection Tool) - Darkfield (laser based) pattern wafer inspection tool. Detects the light a defect scatters whenilluminated with a laser.
• ADC (Automatic Defect Classification) - A software / hardware system that uses a set of user defined images to automatically classify defects.
• RTC (Real Time Classification) - A rough classification of defects that occurs during the AIT inspection scan, real time.
• Defect Class (Manual Class) - A name and number assigned to a type of defect (Example: Skipping/Repeating scratch is a Class 27 defect)
• Defect Bin (ADC Bin or Fine Bin, RTC Bin or Rough Bin) - A group of defect classes used by the classifier (Example: Bin 25 consists of Class25 (stitching scratch), Class 26 (razor scratch), and Class 27 (skipping/repeating scratch)
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Cabot Microelectronics - Slide 5
AIT II Operation
Keyboard
Prealigner
RoboticArm
ChuckCh 0
Laser
IlluminatorOptics
Ch 1
Ch 2
APS
OpticalMicroscope
Locator
A B C
• Die-to-Die comparison done to determine if die contains defects
• Defect must be doubly detected to be considered real, singly on edge
A is compared to B(B compared to A in parallel) C is compared to B(B is compared to C in parallel)
• Double Darkfield Inspection maximizes signal-to-noise ratio
• Defects detected in Ch.1 and Ch.2 are combined for total defects.
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Cabot Microelectronics - Slide 6
Recipe GenerationThe recipe generation step is a series of sub-steps (AIT/ADC/RTC):
Standard AIT IIrecipe setup
Optimize recipeKLA-Tencor BKMand Application Based
Optimize recipe
Review Wafers ADC RTC
Review Wafers
BaselineMultiple Recipes For Each Slurry
• Optimization (Multiple recipes and ADC) + Baseline (Multiple recipes and ADC for each slurry) = ~400 reviews (250 defects per review) = 100,000 reviewed defects
Review Wafers
Review Wafers
ADC Review Wafers
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Cabot Microelectronics - Slide 7
• Criteria For New Recipes:– Defect total on control wafers should be reasonable and contain defects of interest.
The defect type pareto should be comparable for both recipes. Increased defect detection in fine line arrays, still detecting in large features. Detect new defect types / smaller defects (Recipe optimized on a defect in 0.35 µm line array).
• Increase Sensitivity Increase Defect Capture• To Keep Total Count Reasonable Decrease Inspection Area• Decide to keep same number of die and reduce the number of sub-die regions
10 µm Pitch
90% Dense / 5 µm Pitch
Bond Pads
50% Dense / 0.35 µm line width
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Cabot Microelectronics - Slide 8
Each Slurry Type Has Its Own Recipe - Until recipe was setup on a wafer polished in current generation slurry and then used on a wafer polished in an experimental slurry, not obvious that each slurry needs it’s own recipe to truly improve that slurry from the previous generation.
General recipe can be used to screen slurry If true reduction needed, then specific recipe needed for that slurry type
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Recipe Generated On A WaferPolished With Experimental CuSlurry
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Cabot Microelectronics - Slide 9
ADC Overview
• AIT detects defects, then ADC classifies defects• ADC classifies defects based on a set of user defined
images• ADC “sees” defects by doing a die-to-die comparison,
AIT can detect defects much smaller than ADC can “see” (Redetection Error)
• The “goodness” of the ADC will depend on the defect types, number of bins, and the types of examples chosen
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Cabot Microelectronics - Slide 10
Accuracy and Purity1 Man 5 Man 12 Man 13 Man 21 Man 25 Man Purity
1 ADC 244 0 84 124 69 12 0.465 ADC 9 0 8 21 2 2 012 ADC 7 0 104 155 29 40 0.4613 ADC 12 0 10 60 34 75 0.3121 ADC 60 0 84 25 570 360 0.5225 ADC 30 1 5 139 172 768 0.69252 ADC 12 0 3 26 16 5254 ADC 0 0 0 4 2 0255 ADC 0 0 2 0 0 0Accuracy 0.65 0 0.35 0.11 0.64 0.61
Overall Accuracy: 0.521Overall Purity: 0.538
ConfusionBin1: Type14 (Overpolish Barrier / Cu underpolish)Bin5: Type14 (Overpolish Barrier / Cu underpolish)Bin12: Type14 (Overpolish Barrier / Cu underpolish)Bin13: Type27 (Skipping/Repeating Scratch)Bin21: Type27 (Skipping/Repeating Scratch)Bin25: Type17, Type28, and Type31 (General Corrosion, Short Scratch, and Multiple Spots)Bin252: Type14 (Overpolish Barrier / Cu underpolish)
Accuracy =Number of Correctly Classified DefectsNumber of Manually Classified Defects
Purity =Number of Correctly Classified Defects
Number of ADC Classified Defects
•Accuracy is a measure of the ADC “capture rate” of a certain defect type
•Purity is a measure of the ADC“reliability” of certain defect type
*Source: KLA-Tencor IMPACT ADC Best Practices Document
*
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Cabot Microelectronics - Slide 11
Experimental Cu Slurry Recipe Comparison Total Defects
Normalized Defect Totals For Current and New Recipe - Experimental Cu Slurry
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Cabot Microelectronics - Slide 12
Experimental Cu Slurry Recipe Comparison Defect Distribution
• ~ 3250 defects manually reviewed for each recipe (recipe set for very high sensitivity)• Increased sensitivity and increased number of defects in 0.35 µm array can account for
changes in distribution - increase in Class 14 (die-to-die polish variation).• “Class 254” defects are bond pad roughness.• Major defect type not scratching, much improved over Gen 1 copper slurries.
23>22>3 14>23>26Class 23 - Multiple Residue on CuClass 22 - Single Residue on CuClass 3 - Multiple Residue on Dielectric
Class 14 Die-to-Die Polish VariationClass 23 - Multiple Residue on CuClass 26 - Razor Scratch on Cu
Manual Review Distribution For Experimental Cu Slurry Current Recipe
Manual Review Distribution For Experimental Cu Slurry New Recipe
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Cabot Microelectronics - Slide 13
Experimental Cu Slurry Recipe Comparison Defect Distribution
New recipe captures more defects in 0.35 µm array.Less inspected area in new recipe, but fine line array makes up a larger fraction
of the total area.
Defect Capture Comparison For Fine Line Arrays
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Cabot Microelectronics - Slide 14
Experimental Cu Slurry Recipe Comparison ADC Comparison
• Bin 252 is a standard ADC Bin (Redetection Error).• Within Bin 252 the class shifts from 26 (razor) to 14 (die-to-die polish variation)
ADC Distribution For Experimental Cu Slurry Current Recipe and Classifier
ADC Distribution For Experimental Cu Slurry New Recipe and Classifier
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Cabot Microelectronics - Slide 15
Experimental Cu Slurry Recipe Comparison ADC Comparison
Correlation Curve for ADC Bin 13 and Manual Review Bin 13 for New Recipe (Development Recipe) and Current Classifier
R2 = -3.9035
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Correlation Curve for ADC Bin 13 and Manual Review Bin 13 for New Recipe (Development Recipe) and New Classifier (Slurry Specific)
R2 = 0.9452
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Correlation Curve for ADC Bin 21 and Manual Review Bin 13 for New Recipe (Development Recipe) and Current Classifier
R2 = 0.9828
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Correlation Curve for ADC Bin 21 and Manual Review Bin 13 for New Recipe (Development Recipe) and New Classifier (Slurry Specific)
R2 = 0.9375
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Correlation Curve for ADC Bin 25 and Manual Review Bin 25 for New Recipe (Development Recipe) and Current Classifier
R2 = -4.5125
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Correlation Curve for ADC Bin 25 and Manual Review Bin 25 for New Recipe (Development Recipe) and New ADC (Slurry Specific)
R2 = 0.4763
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• Improvement in bins that contain corrosion, some improvement in scratch.• Currently working to further improve scratch bin, not the predominant defect type
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Cabot Microelectronics - Slide 16
Experimental Cu Slurry Defect Type Examples Defect Class 14 (Die-To-Die Polish Variation)
Note slight variation in color from die-to-die
Note over-polish variation from die-to-die
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Cabot Microelectronics - Slide 17
Experimental Cu Slurry Defect Type Examples
Defect “Class 254” (Roughness)Now referred to as Class 31 (Multiple Spots on Cu)
Roughness (3-11 A) remove by Barrier CMP
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Cabot Microelectronics - Slide 18
Experimental Cu Slurry Target Defect Type
Defect Type Number Impact"Class 254"Roughness High Low
Class 14Die-to-Die Polish High Low
VariationClass 23 High Low
Multiple ResidueClass 26 High Low
Razor ScratchClass 31 MedMultiple to LowSpots High
Class 21 Med LowDark / Hard Spot
Class 22 Med LowResidueClass 28 Low
Short Scratch MedClass 27
Skip/Repeat Low HighScratchClass 17 Low Low?Corrosion
• Defect map overlay work has revealed that most defects rated as low impact because Barrierpolish will remove them.
• Class 27 low number, but high impact.
• Class 27 (Skipping/Repeating Scratch on Cu) is the target defect type.
• Feature size where defects occur needs tobe taken into account.
• Experimental Cu slurry has ~8x less skip/repeat scratch defects and ~2.5x less total scratches than Gen 1 slurry.
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Cabot Microelectronics - Slide 19
Correlation Between ADC Bin 25 and Manual Review Bin 25 for New Recipe and New Classifier
R2 = 0.9144
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Correlation Between ADC Bin 25 and Manual Bin 25 for New Recipe and Old Classifier
R2 = 0.7941
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Correlation Between ADC Bin 21 and Manual Review Bin 21 For New Recipe and Old Classifier
R2 = 0.7786
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Correlation Between ADC Bin 21 and Manual Review Bin 21 for New Recipe and New Classifier
R2 = 0.7691
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Cabot Microelectronics - Slide 20
Experimental Barrier Slurry Target Defect Type
Defect Type Number ImpactClass 26 High High/Med?
Razor ScratchClass 28 Medium Med?
Short ScratchClass 21 Medium Med?
Dark / Hard SpotClass 31Multiple Medium Med?Spots
Class 27Skip/Repeat Medium High
ScratchClass 25 Medium Med?
Stitching ScratchClass 22 Low Med?ResidueClass 14
Die-to-Die Polish Low Low/Med ?VariationClass 12 Low HighFall-on
Class 17 Low HighCorrosion
• Many defects are classified as high impact after Barrier polish, because this is what the customer sees.
• Overlay of Cu and Barrier polish needs to be doneto identify which defects occur at which step, and toidentify which defects Barrier polish removes.
• Barrier polishing erases Razor and Stitching scratches,and sometimes leaves remains of Skipping/Repeating behind from Cu polish as Multiple Spots.
• Target defects should be Class 26 (Razor Scratch on Cu) and Class 27 (Skipping/Repeating Scratch on Cu).
• Development work in the last 12 months has shown a a >50% reduction in razor scratch defects.
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Cabot Microelectronics - Slide 21
Performance Monitoring• After baseline is complete, Klarity Defect will be used to monitor experiment results.• Klarity Defect also used to differentiate between defects generated after Cu polish and after Barrier polish.
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Cabot Microelectronics - Slide 22
Summary
• Consumable suppliers and metrology equipment suppliers are jointly developing a CMP defect reduction methodology by joining skills of slurry optimization and inspection method optimization.
• To truly optimize a slurry, a unique inspection recipe is required. Recipes (classifiers) have to be modified as slurry improves. SEM inspection essential to keep accuracy high.
• Total number of defects important, knowing the distribution of the defect types even more important.
• Many experimental Cu slurry defect types removed by barrier slurry polish and the major defect type is not scratching, a large improvement over first generation slurries.
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Cabot Microelectronics - Slide 23
Acknowledgements• Copper Development TeamsCabot Microelectronics• Paul FeeneyIntegration Manager, Cabot Microelectronics• Jose EstabilSenior Director Technology IBM/EUSA Business Units, KLA-Tencor• Kelley HalchuckSales Account Manager, KLA-Tencor• James ZimmermanField Application Engineer Defect Solutions Division, KLA-Tencor• Mulia MandiroApplications Engineer - ADC, KLA-Tencor
Semi and NCCAVS – for sponsoring these symposia