liverpool group presentation 22/07/2009 angela.intermite@quasar- group.org sipm response:...
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Liverpool Group presentation 22/07/2009
SiPM response: experimental results
In collaboration with the University of Catania
SiPM response: experimental results
In collaboration with LSN-University of Catania and STMicroelectronics-Catania
Liverpool Group presentation 22/07/2009
Liverpool Group presentation 22/07/2009
Overview
• SiPMs and beam loss monitor
• From a single SPAD to a SiPM (1)
• From a single SPAD to a SiPM (2)
• SiPM models
• Realization of the amplifiers and SiPMs signal readout board
• Dark count
• SiPM to a pulsed laser signal
• Measurements of rise time and recovery time
• Conclusions
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Liverpool Group presentation 22/07/2009
SiPMs and beam loss monitor
-Multimode step index fibers
- SiPM directly coupled to the fibers
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Liverpool Group presentation 22/07/2009
From a single SPAD to a SiPM (1)
OXIDE
METAL
N+
N+
GetteringP+
Sinker
- Semiconductor junction with a reverse bias few Volts above VBD.
- Depletion layer E higher than 3x105 V/cm: a single carrier can trigger a self-sustaining avalanche.
- A few mA current pulse with sub-nanosecond rise time is sharply produced.
- The voltage is restored to the bias value and the device is ready to detect another photon quenched the avalanche by using a large resistor (passive quenching) or a suitable circuit (active quenching).
S
P
A
D
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Liverpool Group presentation 22/07/2009
From a single SPAD to a SiPM (2)
-Matrix of n pixels in parallel
- Every pixel gives the same signal when it is hit by a photon but the output charge is proportional to the number of triggered cells, i.e the number of injected photons: Qout=C(VR – VBR) Nfired
- Analog device
S
I
P
M
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Liverpool Group presentation 22/07/2009
SiPM models
STMicroelectronics (Catania) Photonique SA-Switzerland
- Blue range
- Visible range
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-Active surface 1mm2
- Number of cells ~500
- Fill factor > 70%
Liverpool Group presentation 22/07/2009
Realization of the amplifiers and the signal readout board
• High gain amplifier (Photonique AMP_0604) Signal rise time ~5ns (5000ps), Amplification 20x...60x• High Rise Time amplifier (Photonique AMP_0611) Signal rise time ~700ps, amplification 10x...20x• Catania very high gain amplifier Amplification 10x...200x
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Liverpool Group presentation 22/07/2009
Dark count measurements : repetition frequency and dark peak amplitude
Dark noise rate originates from the carriers thermically created in sensitive volume and also due to the effects of high electric fields. The SiPM dark rate increases with temperature.
SiPM Dark count amplitude (mV)
Blue Phot 20
Vis Phot 20
ST modF 25
ST mod H 30
1 ph
2 ph
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Liverpool Group presentation 22/07/2009
SiPM response to a pulsed laser signal
Laser features:Wavelength: 408 ± 10 nmSpectral width (Δλ) <7nmPulse width <60 psPeak power in collimated beam (mW) >140Tune: [0,100] % Repetition frequency: 10Hz-1MHz
Experiments:
-Fixed tune and variable rep frequency
- Fixed rep frequency and variable tune
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Liverpool Group presentation 22/07/2009
SiPM response to a pulsed laser signal: fixed tune
1 kHz: a signal every 1ms f= 5kHz: a signal every 200μs
f=100 kHz: a signal every 10 μs1 MHz: a signal every 1μs
We have a coherent signal for every repetiton frequency between 10 Hz and 1 MHz
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Liverpool Group presentation 22/07/2009
SiPM response to a pulsed laser signal: fixed repetition frequency
Tune 4.4%Tune 20%Tune 50%Tune 100%
The SiPM response is proportional to the injected photons until the Nph< Ncells : saturation
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Liverpool Group presentation 22/07/2009
SiPM response to a pulsed laser signal: rise time and recovery time
Rise time: time useful for triggering the avalanche
Recovery time: time useful for quenching the avalanche (dependent on the quenching circuitry used)
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Liverpool Group presentation 22/07/2009
Conclusions
We mounted the read-out electronics of SiPM and we tested the SiPMs for observing their response to:
• Different amplifiers
• Dark count
• Timing response between 10 Hz and 1 MHz with a pulsed laser signal
• Rise time and recovery time
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Liverpool Group presentation 22/07/2009
Thank you very much for your attention
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