leonid i. murin 1,2 and bengt g. svensson 2
DESCRIPTION
INTERACTION OF INTRINSIC DEFECTS WITH OXYGEN IN NEUTRON-IRRADIATED MCZ-SI: AN INFRARED ABSORPTION STUDY. Leonid I. Murin 1,2 and Bengt G. Svensson 2 1 Joint Institute of Solid State and Semiconductor Physics, Minsk, Belarus - PowerPoint PPT PresentationTRANSCRIPT
Leonid I. Murin Leonid I. Murin 1,21,2 and and Bengt G. Svensson Bengt G. Svensson 22
11 Joint Institute of Solid State and Semiconductor Joint Institute of Solid State and Semiconductor
Physics, Minsk, BelarusPhysics, Minsk, Belarus2 2 Oslo University, Centre for Materials Science and Oslo University, Centre for Materials Science and
Nanotechnology, Oslo, NorwayNanotechnology, Oslo, Norway
INTERACTION OF INTRINSIC DEFECTS WITH OXYGEN IN NEUTRON-IRRADIATED MCZ-SI:
AN INFRARED ABSORPTION STUDY
OUTLINE
• Experimental• IR spectra of n-irradiated MCz-Si samples• Annealing at 80 C• Annealing at 150-250 C• I2 and I2O defects: what we know • Conclusions
Experimental
• Samples: MCz-Si crystals ( [Oi] = 5x1017 cm-3, [Cs] < 5x1015 cm-3)Dimensions were 10 × 6 × 2.8 mm
• Treatments:Room temperature neutron (1x1015, 3x1015, 1x1016, 3x1016 cm-2) irradiation Thermal anneals in the range 80-250 ºC
• Measurements: FTIR (Bruker IFS 113v) at 12-30 K (resolution 0.5 cm-1) and/or 300 K (resolution 1.0 cm-1) in the wavenumber range 400-4000 cm-1.
700 800 900 1000 1100
0.0
0.5
1.0
1.5
3x1016
1x1016
3x1015
1x1015
OiTmeas = 300 K
MCzSi6 n-irradiated at RT
I2OiVO
Abs
orpt
ion
coef
ficie
nt, c
m-1
Wavenumber, cm-1
750 800 850 900 950 1000 1050
0.00
0.05
0.10
0.15
0.20
0.25
933
830
Tmeas = 300 K
O2i1013
MCzSi6 n-irradiated at RT
3E15
1E15
1E16
1008
I3Oi?
I2Oi
CiOi
VO
3E16
Abs
orpt
ion
coef
ficie
nt, c
m-1
Wavenumber, cm-1
800 900 1000 1100
0.00
0.05
0.10
0.15
0.20
0.25
Oi
933830
Tmeas = 300 K
O2i
1013
Difference: 3x1016 - 1x1015 cm-2
1008I3Oi?
I2Oi
CiOi
VO
Abs
orpt
ion
coef
ficie
nt, c
m-1
Wavenumber, cm-1
0 5 10 15 20 25 30
0.00
0.05
0.10
0.15
[VO] = 6.5x1015 cm-3
Dose dependence
Tmeas = 300 K
I3O?CiOi
I2O
VO
830 cm-1
933 cm-1
862 cm-1
1006 cm-1
A
bsor
ptio
n co
effic
ient
, cm
-1
Fluence, 1015 cm-2
750 800 850 900 950 1000 1050 1100
0.0
0.1
0.2
0.3
0.4
IO2i
18Oi
835.8
935.7
Tmeas = 25 K
O2i
1012.4
MCzSi6 n-irradiated at RT
3E15
1E15
1E16
1011I3Oi?
I2Oi
CiOi
VO
3E16
Abs
orpt
ion
coef
ficie
nt, c
m-1
Wavenumber, cm-1
800 900 1000 2700 2800 2900 3000
0.0
0.1
0.2
0.3
0.4
0.5
x0.5
2767
V2 excitation
18Oi
835.8
935.7
Tmeas = 25 K
O2i
LVMs of O-related defects and V2 electronic transitions
3E15
1E15
1E16
1011I3Oi?
I2Oi
CiOi
VO
3E16
Abs
orpt
ion
coef
ficie
nt, c
m-1
Wavenumber, cm-1
800 900 1000 2700 2800 2900 3000
0.0
0.1
0.2
0.3
0.4
0.5
x0.5
2767
V2 excitation
18Oi
835.8
935.7
Tmeas = 25 K
O2i
LVMs of O-related defects and V2 electronic transitions
3E15
1E15
1E16
1011I3Oi?
I2Oi
CiOi
VO
3E16
Abs
orpt
ion
coef
ficie
nt, c
m-1
Wavenumber, cm-1
750 800 850 900 950 1000 1050
0.00
0.05
0.10
0.15
0.20
0.25Isothermal annealing at 80 C
Tmeas = 300 K
MCz6-10 irradiated with 3x1016 cm-2 neutrons
80C 60 min
80C 3 h
80C 30 min
80C 5 min
I3Oi?
I2Oi
CiOi
VO
3E16
Abs
orpt
ion
coef
ficie
nt, c
m-1
Wavenumber, cm-1
800 900 1000 1100
0.00
0.05
0.10
0.15
0.20
0.25
Oi
80C 30 min - before anneal
Isothermal annealing at 80 C, difference spectra
Tmeas = 300 K
MCz6-10 irradiated with 3x1016 cm-2 neutrons
80C 6 h - before anneal
I2Oi
VO
DA
C, c
m-1
Wavenumber, cm-1
800 900 1000 2700 2800 2900 3000
0.0
0.1
0.2
0.3
0.4
0.5
Difference: 80C 12 h - before anneal
Isothermal annealing at 80 C, difference spectra
x0.5
2767
V2 excitation
835.8
935.7
Tmeas = 25 K
I2Oi
VO
DA
C, c
m-1
Wavenumber, cm-1
0 200 400 600 800 1000 1200
0.1
145 C
60 C
80 C
MCz6-10, 3E16, 80C, = 25 min MCz6-8, 1E16, 80C, = 26 min MCz6-7, 1E16, 60C, = 277 min MCz6-11, 1E16, 45C, = 1672 min linear fits
N = N0exp(-t/)
U
nann
eale
d fra
ctio
n 9
36(t)
/93
6(0
)
Annealing time, min
2.8 2.9 3.0 3.1 3.2
103
104
105
(preliminary results)
Estimation: T = 295 K, = 30 days
Temperature dependence of I2O life-time
= -1exp(E/kT)
E = 1.16 ± 0.1 eV
= 2.5*1013 s-1
, s
1000/T, K
750 800 850 900 950 1000 1050
0.0
0.1
0.2
0.3
0.4
250C 30 min
Annealing 80-250 C
Tmeas = 300 K
MCz6-10 irradiated with 3x1016 cm-2 neutrons
200C 30 min
80C 24 h
150C 30 min
I3,4Oi?
I2Oi
CiOi
VO
3E16
Abs
orpt
ion
coef
ficie
nt, c
m-1
Wavenumber, cm-1
800 900 1000 1100
0.00
0.05
0.10
0.15
0.20
0.25
V3O
Oi
Difference spectrum, 250C 30min - 150C 30min
Tmeas = 300 K
MCz6-10 irradiated with 3x1016 cm-2 neutrons
V2O
DA
C, c
m-1
Wavenumber, cm-1
750 800 850 900 950 1000 1050 1100
0.0
0.2
0.4
0.6
0.8MCz6-10 irradiated with 3x1016 cm-2 neutrons
Annealing 80-250 C
1062
250C 30min
200C 30min
18Oi
835.8 935.7Tmeas = 25 K
150C 30min
80C 24 h
1011I3,4Oi?
I2Oi
CiOi
VO
3E16
Abs
orpt
ion
coef
ficie
nt, c
m-1
Wavenumber, cm-1
820 830 840 850
0.0
0.2
0.4
0.6
0.8
V3O-
V3O0
V2O-
V2O0
MCz6-10 irradiated with 3x1016 cm-2 neutronsAnnealing 80-250 C
250C 30min
200C 30min
835.8Tmeas = 25 K
150C 30min
80C 24 h
VO
3E16
Abs
orpt
ion
coef
ficie
nt, c
m-1
Wavenumber, cm-1
800 900 1000 2700 2800 2900 3000
0.0
0.2
0.4
0.6
0.8
250C 30min
200C 30min
150C 30min
80C 24h
3E16
MCz6-10 irradiated with 3x1016 cm-2 neutronsAnnealing 80-250 C
x0.25
2767V2
18Oi
Tmeas = 25 K
I3,4Oi?
I2Oi
CiOi
VO
Abs
orpt
ion
coef
ficie
nt, c
m-1
Wavenumber, cm-1
800 820 840 860 2700 2800
0.0
0.1
0.2
0.3
0.4
Difference spectrum, 250C 30min - 200C 30min
842.4
833.4
V3O
3E16
MCz6-10 irradiated with 3x1016 cm-2 neutrons
x0.25
2767
V2
Tmeas = 25 K
V2O
Abs
orpt
ion
coef
ficie
nt, c
m-1
Wavenumber, cm-1
I2, I2O - WHAT IS KNOWN
I2 defect
I2O defect
Some latest publications
Davies G., Hayama S., Murin L., Krause-Rehberg R., Bondarenko V., Sengupta A., Davia C., and Karpenko A. Radiation damage in silicon exposed to high-energy protons // Phys. Rev. B. – 2006. - Vol. 73, N 16. – P.165202 (1-10). Hermansson J., Murin L.I., Hallberg T., Markevich V.P., Lindstrom J.L., Kleverman M., and Svensson B.G. Complexes of the self-interstitial with oxygen in irradiated silicon: a new assignment of the 936 cm-1 band // Physica B: Condensed Matter. - 2001. - Vols. 302-303. - P. 188-192.
Some conclusions• - The dominant infrared absorption bands observed in neutron-
irradiated bulk MCzSi are the bands related to VO and I2O (vibrational modes) and V2 (electronic transitions). The CiOi-related LVMs are already saturated after a dose of about 1x1015 cm-2. Some traces of ICiOi, IO2i and I2O2i could be detected as well.
• -After irradiation with doses (1-3)x1016 cm-2 a new band at 1011 cm-1 is appearing, which could be related to I3O or I4O defects. The 1011 cm-1 band anneals out at 200 C.
• -Annealing at 80C results in elimination of I2O (monitored by an absorption band at 936 cm-1) and in growth of VO (absorption band at 836 cm-1). Annealing of I2O obeys the 1-st order kinetics with an activation energy of about 1.1-1.2 eV and pre-factor 2.5x1013 s-1 .
• - Annealing at 250C results in elimination of V2 (monitored by an absorption band at 2767 cm-1) and in growth of V2O (band at 833.4 cm-1) and V3O (band at 842.4 cm-1) defects.