july 27 (monday)ep2dsmss.sakura.ne.jp/program/mss_final_all_0724.pdf1, j. yang1, k. kanisawa2, and...

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MSS-17 Program July 24 th , 2015 July 27 (Monday) (9:00-9:20) Opening Remarks Plenary Session - I Session Chair: Klaus von Klitzing (Max Planck Institute) Mo-PL-1 (9:20-10:00) Progress of GaN LED (plenary) Hiroshi Amano Nagoya University, Japan Mo-PL-2 (10:00-10:40) Trace gas sensing - challenges and opportunities of an emerging application area for novel semiconductor lasers (plenary) Alfred Forchel University of Würzburg, Germany Coffee Break (30 min.) Plenary Session - II Session Chair: Robin Nicholas (University of Oxford) Mo-PL-3 (11:10-11:50) Quantum Information Processing with Single Donors in Silicon (plenary) Andrea Morello University of New South Wales, Australia Mo-PL-4 (11:50-12:30) High Density 2D Electron Systems in Transition Metal Dichalcogenides (plenary) Yoshihiro Iwasa University of Tokyo, Japan Lunch Break (90 min.)

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Page 1: July 27 (Monday)ep2dsmss.sakura.ne.jp/program/mss_final_all_0724.pdf1, J. Yang1, K. Kanisawa2, and S. C. Erwin3 1Paul-Drude-Institut für Festkörperelektronik, Germany, 2NTT Basic

MSS-17 Program July 24th, 2015

July 27 (Monday)

(9:00-9:20) Opening Remarks

Plenary Session - I Session Chair: Klaus von Klitzing (Max Planck Institute) Mo-PL-1 (9:20-10:00) Progress of GaN LED (plenary) Hiroshi Amano Nagoya University, Japan Mo-PL-2 (10:00-10:40) Trace gas sensing - challenges and opportunities of an emerging application area for novel semiconductor lasers (plenary) Alfred Forchel University of Würzburg, Germany

Coffee Break (30 min.)

Plenary Session - II Session Chair: Robin Nicholas (University of Oxford) Mo-PL-3 (11:10-11:50) Quantum Information Processing with Single Donors in Silicon (plenary) Andrea Morello University of New South Wales, Australia Mo-PL-4 (11:50-12:30) High Density 2D Electron Systems in Transition Metal Dichalcogenides (plenary) Yoshihiro Iwasa University of Tokyo, Japan

Lunch Break (90 min.)

Page 2: July 27 (Monday)ep2dsmss.sakura.ne.jp/program/mss_final_all_0724.pdf1, J. Yang1, K. Kanisawa2, and S. C. Erwin3 1Paul-Drude-Institut für Festkörperelektronik, Germany, 2NTT Basic

Quantum Dots Session Chair: David G. Austing (National Research Council of Canada) Mo-B1-1 (14:00-14:30) Quantum dots with single-atom precision (invited) S. Fölsch1, J. Martinez-Blanco1, J. Yang1, K. Kanisawa2, and S. C. Erwin3 1Paul-Drude-Institut für Festkörperelektronik, Germany, 2NTT Basic Research Laboratories, Japan, and 3Naval Research Laboratory, USA Mo-B1-2 (14:30-14:45) Deterministic Single Picosecond Pulse Generation of the Dark Exciton in an Arbitrary Coherent Spin State Ido Schwartz, Dan Cogan, Emma Schmidgall, Liron Gantz, Yaroslav Don, and David Gershoni Technion, Israel Mo-B1-3 (14:45-15:00) Probing the Two-Photon Interference Visibility of Deterministic Quantum Dot Microlenses by Two-Pulse Experiments with Variable Pulse-Separation Alexander Thoma, Peter Schnauber, Marc Seifried, Manuel Gschrey, Jan-Hindrik Schulze, Andre Strittmatter, Sven Rodt, Tobias Heindel, and Stephan Reitzenstein Technische Universitaet Berlin, Germany Mo-B1-4 (15:00-15:15) Increased Nuclear Spin Coherence in Strained Quantum Dots under π-pulse trains Andreas M. Waeber1, Ian Farrer2, David A. Ritchie2, Jonas Nilsson3, R. M. Stevenson3, Anthony J. Bennett3, Andrew J. Shields3, Maurice S. Skolnick1, Alexander I. Tartakovskii1, and Evgeny A. Chekhovich1 1University of Sheffield, UK, 2 University of Cambridge, UK and 3Toshiba Research Europe Limited, UK Mo-B1-5 (15:15-15:30) Phonon-assisted Population Inversion of a Single InGaAs/GaAs Quantum Dot by Pulsed Laser Excitation Feng Liu1, John H. Quilter1,2, Alistair J. Brash1, Luis M. P. P. Martins1, Martin Glässl3, Andreas M. Barth3, Vollrath M. Axt3, Andrew J. Ramsay4, Maurice S. Skolnick1, and Anthony M. Fox1 1University of Sheffield, UK, 2 University of London, UK, 3 Universitat Bayreuth, Germany and 4University of Cambridge, UK

Coffee Break (30 min.)

Page 3: July 27 (Monday)ep2dsmss.sakura.ne.jp/program/mss_final_all_0724.pdf1, J. Yang1, K. Kanisawa2, and S. C. Erwin3 1Paul-Drude-Institut für Festkörperelektronik, Germany, 2NTT Basic

Spintronics - I Session Chair: Yuzo Ohno (Tsukuba University) Mo-B2-1 (16:00-16:30) Optical Addressing of Single Spins in a Silicon Nano-transistor (invited) Chunming Yin1, Milos Rancic2, Gabriele G. de Boo1, Brett C. Johnson3, Jeffrey C. McCallum3, Matthew J. Sellars2, and Sven Rogge1 1The University of New South Wales, Australia, 2 Australian National University, Australia and 3The University of Melbourne, Australia Mo-B2-2 (16:30-16:45) Electrical control of drifting spin coherence in persistent spin helix condition Yoji Kunihashi1, Haruki Sanada1, Hideki Gotoh1, Koji Onomitsu1, Makoto Kohda2, Junsaku Nitta2, and Tetsuomi Sogawa1 1NTT Basic Research Laboratories, Japan and 2Tohoku University, Japan Mo-B2-3 (16:45-17:00) Electrical control of ferromagnetism in InAs/(In,Fe)As/InAs trilayer quantum wells by wavefunction engineering Duc Anh Le1, Nam Hai Pham1,2, Yuichi Kasahara1,3, Yoshihiro Iwasa1,4, and Masaaki Tanaka1 1The University of Tokyo, Japan, 2 Tokyo Institute of Technology, Japan, 3 Kyoto University, Japan and 4RIKEN, Japan Mo-B2-4 (17:00-17:15) Effect of Li codoping on in-plane uniaxial magnetic anisotropy in (Ga,Mn)As Shohei Miyakozawa, Lin Chen, Fumihiro Matsukura, and Hideo Ohno Tohoku University, Japan Mo-B2-5 (17:15-17:30) Fabrication and characteristics of a GaMnAs-based vertical spin MOSFET structure Toshiki Kanaki, Hirokatsu Asahara, Shinobu Ohya, and Masaaki Tanaka The University of Tokyo, Japan

Poster Session -I (17:30-19:30) Mo-PM-1 Formation dynamics and initial phase shift of resident electron spin polarization observed by time-resolved Kerr rotation spectroscopy Liping Yan, Reina Kaji, and Satoru Adachi Hokkaido University, Japan Mo-PM-2 Microscopy of semiconductor heterostructures prepared with beam-exit cross-sectional polishing Alex Robson1,2, Oleg Kolosov1,2, and Manus Hayne1,2 1Lancaster University, UK and 2Lancaster Material Analysis, UK

Page 4: July 27 (Monday)ep2dsmss.sakura.ne.jp/program/mss_final_all_0724.pdf1, J. Yang1, K. Kanisawa2, and S. C. Erwin3 1Paul-Drude-Institut für Festkörperelektronik, Germany, 2NTT Basic

Mo-PM-3 Electroluminescence Spectra of Dual-Wavelength InGaN/GaN Multi-Quantum-Well-Based System under Nonuniform Current Injection Yulia Kholopova1, Evgeny Polushkin1, Sergey Larkin1, V.alery Zemlyakov2, Vladimir Egorkin2, Nina Antonova3, Andrey Tsatsul'nikov4, Irina Khmyrova5, and Sergei Shapoval1 1IMT RAS, Russia, 2 NRUET, Russia, 3 NRNU MEPhI, Russia, 4 A.F.Ioffe Physico-Technical Institute RAS, Russia and 5University of Aizu, Japan Mo-PM-4 X-STM measurements of band bending across GaAs/AlAs heterojunction Shigeru Kaku, Masayuki Tsukui, Tatsuhito Ando, and Junji Yoshino Tokyo Institute of Technology, Japan Mo-PM-5 Fiber-Coupled Quantum Dot Single-Photon Sources Operated by a Compact Stirling Cryocooler Alexander Schlehahn, Manuel Gschrey, Jan-Hindrik Schulze, Sven Rodt, Andre Strittmatter, Tobias Heindel, and Stephan Reitzenstein Technische Universitaet Berlin, Germany Mo-PM-6 Broadband Control of Emission Wavelength of InAs/GaAs Quantum Dots by Growth Temperature of GaAs Capping Layer Toshiyuki Kaizu, Takuya Matsumura, and Takashi Kita Kobe University, Japan Mo-PM-7 Influence of Random Defect Potential on Level Mixing in Quantum Dot Spectrum Ben Harack1, Michael Hilke1, and David Austing1,2 1McGill University, Canada and 2National Research Council of Canada, Canada Mo-PM-8 The comparative role of hyperfine and quadrupolar couplings on electron spin decoherence in InGaAs Quantum dots Alexander Bechtold1, Dominik Rauch1, Tobias Simmet1, Per-Lennart Ardelt1, Kai Müller1,2, Fuxiang Li3, Nikolai Sinitsyn3, and Jonathan Finley1 1Technische Universitaet Muenchen, Germany, 2 Stanford University, USA and 3Los Alamos National Laboratory, USA Mo-PM-9 Entanglement Dynamics of Molecular Exciton States in Coupled Quantum Dots Cameron L. Jennings and Michael Scheibner University of California, Merced, USA

Page 5: July 27 (Monday)ep2dsmss.sakura.ne.jp/program/mss_final_all_0724.pdf1, J. Yang1, K. Kanisawa2, and S. C. Erwin3 1Paul-Drude-Institut für Festkörperelektronik, Germany, 2NTT Basic

Mo-PM-10 Local field effect in semiconductor quantum dots observed by spectrally-resolved photon echoes Yasuyoshi Mitsumori1, Shunta Watanabe1, Kenta Asakura1, Keiichi Edamatsu1, Kouichi Akahane2, and Naokatsu Yamamoto2 1Tohoku University, Japan and 2National Institute of Information and Communications Technology, Japan Mo-PM-11 Transport and thermoelectric properties in Ge/Si core/shell nanowires Tomohiro Noguchi, Koudai Morita, Marolop Simanullang, Koichi Usami, Tetsuo Kodera, and Shunri Oda Tokyo Institute of Technology, Japan Mo-PM-12 - Withdrawn - Mo-PM-13 Exciton dynamics and absorbance of starin-compensated InAs quantum dots Yoshitaka Sato1, Kouichi Akahane2, and Junko Ishi-Hayase1 1Keio University, Japan and 2National Institute of Information and Communications Technology (NICT), Japan Mo-PM-14 Mobility of in-plane photocurrent of stacked InAs QDs layers in strain-relaxed InGaAs matrix Naoto Kumagai, Keisuke Murakumo, Takahiro Kitada, and Toshiro Isu Tokushima University, Japan Mo-PM-15 Trapping potential formation for the yellow 1S excitons in Cu2O thin films sandwiched by MgO plates Shingo Aihara, Kouya Gunji, Akinobu Ota, Kazunori Iwamitsu, Fusao Ichikawa, Hiroshi Isobe, Tomoshige Shimamoto, and Ichiro Akai Kumamoto University, Japan Mo-PM-16 - Withdrawn - Mo-PM-17 Strong Coupling of Intersubband Resonance in a Triangular Well to a THz Metamaterial Shovon Pal, Hanond Nong, Sergej Markmann, Nadezhda Kukharchyk, Sascha R. Valentin, Sven Scholz, Arne Ludwig, Claudia Bock, Ulrich Kunze, Andreas D. Wieck, and Nathan Jukam Ruhr University Bochum, Germany Mo-PM-18 Annealing Effect on Spin Relaxation in Be-doped InGaAsP Hao Wu1, Ryo Harasawa1, Yuya Yasue1, Takanori Aritake1, Lian Ji2, Shulong Lu2, and Atsushi Tackeuchi1 1Waseda University, Japan and 2Chinese Academy of Sciences, China

Page 6: July 27 (Monday)ep2dsmss.sakura.ne.jp/program/mss_final_all_0724.pdf1, J. Yang1, K. Kanisawa2, and S. C. Erwin3 1Paul-Drude-Institut für Festkörperelektronik, Germany, 2NTT Basic

Mo-PM-19 Epitaxial Fe/MgO Tunnel Junctions for Spin Injection into Group-IV Semiconductors Juliane Laurer, Matthias Kronseder, Michaela Trottmann, Armin Heinrichsdobler, Markus Haertinger, Mariusz Ciorga, Josef Zweck, Christian H. Back, Dieter Weiss, and Dominique Bougeard Universitaet Regensburg, Germany Mo-PM-20 Temperature and Barrier Thickness Dependence of Spin Relaxation Time in GaAs/AlGaAs Tunneling Bi-Quantum-Well Takanori Aritake1, Ryo Harasawa1, Yuya Yasue1, Hao Wu1, Shunichi Muto2, and Atsushi Tackeuchi1 1Waseda University, Japan and 2Hokkaido University, Japan Mo-PM-21 Electric control of spin diffusion length in GaAs(111) quantum wells Alberto Hernández-Mínguez, Klaus Biermann, Rudolph Hey, and Paulo V. Santos Paul-Drude-Institut fuer Festkoerperelektronik, Germany Mo-PM-22 Gate control of spin-valve signal and Hanle signal in GaAs observed by a four-terminal nonlocal geometry Takumi Miyakawa, Takafumi Akiho, Yuya Ebina, Masafumi Yamamoto, and Tetsuya Uemura Hokkaido University, Japan Mo-PM-23 Optical measurements of perpendicularly polarized spin injection in L10-FePt / MgO / n-GaAs structures Rento Ohsugi1, Yoji Kunihashi2, Haruki Sanada2, Makoto Kohda1, Hideki Gotoh2, Sogawa Tetsuomi2, and Junsaku Nitta1 1Tohoku Uiversity, Japan and 2NTT Basic Research Laboratory, Japan Mo-PM-24 Trials to Detect Spin-Selective Phenomena in InGaAs/InAlAs Double Quantum Well Hang Chen1, Takashi Yamashige1, Atsushi Sawada1, Bolin Liu1, Hiroki Sugiyama2, Yoshiaki Sekine3, and Takaaki Koga1 1Hokkaido University, Japan, 2 NTT Device Technology Laboratories, Japan and 3NTT Basic Research Laboratories, Japan Mo-PM-25 Atomic-scale Authentication With Resonant Tunnelling Diodes Jonathan Roberts1, Ibrahim E. Bagci1, Mohamad A. M. Zawawi2, James Sexton2, Nicholas Hulbert1, Yasir J. Noori1, Matthew P. Young1, Christopher S. Woodhead1, Mohamed Missous2, Max A. Migliorato2, Utz Roedig1, and Robert J. Young1 1Lancaster University, UK and 2University of Manchester, UK

Page 7: July 27 (Monday)ep2dsmss.sakura.ne.jp/program/mss_final_all_0724.pdf1, J. Yang1, K. Kanisawa2, and S. C. Erwin3 1Paul-Drude-Institut für Festkörperelektronik, Germany, 2NTT Basic

Mo-PM-26 All-electrical measurement of the spin-triplet relaxation time in self-assembled quantum dots Kevin Eltrudis1, Amran Al-Ashouri1, Andreas Beckel1, Arne Ludwig2, Andreas D. Wieck2, Martin Geller1, and Axel Lorke1 1University of Duisburg-Essen, Germany and 2Ruhr-Universitaet Bochum, Germany Mo-PM-27 Boosting single electron spin flips in quantum dots Takumi Ito1, Jun Yoneda1,2, Kenta Takeda1,2, Akito Noiri1, Tomohiro Otsuka1,2, Takashi Nakajima1,2, Matthieu Delbecq1,2, Shinichi Amaha2, and Seigo Tarucha1,2 1The University of Tokyo, Japan and 2RIKEN, Japan Mo-PM-28 Correlation between Morphology and Transport Properties of Quasi-Free-Standing Monolayer Graphene Yuya Murata1, Torge Mashoff2, Makoto Takamura3, Shinichi Tanabe3, Hiroki Hibino3, Fabio Beltram1,2, and Stefan Heun1 1NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Italy, 2 NEST, Istituto Italiano di Tecnologia, Italy and 3NTT Basic Research Laboratories, Japan Mo-PM-29 Atmospheric pressure chemical vapor deposition growth of graphene with millimeter-scale grain size Shengnan Wang, Satoru Suzuki, Makoto Takamura, and Hiroki Hibino NTT Basic Research Laboratories, Japan Mo-PM-30 Conductive atomic force microscopy measurements of nanoribbons of epitaxial graphene Keiko Takase1, Tien M. Tran1,2, Kazuaki Furukawa1, Makoto Takamura1, and Hiroki Hibino1 1NTT Basic Research Laboratories, Japan and 2Nagaoka University of Technology, Japan Mo-PM-31 Excitation of cyanine dye thin film via energy transfer from a Si substrate Yukako Ito1, Osamu Kojima1, Takashi Kita1, and YongGu Shim2 1Kobe University, Japan and 2Osaka Prefecture University, Japan Mo-PM-32 Stress relaxation mechanism by strain in the Si-SiO2 system and its modification by laser irradiation Daniel Kropman1, Artur Medvid2, Pavel Onufriev2, and Edvins Daukšta2 1Tallinn University of Technology, Estonia and 2Riga Technical University, Latvia Mo-PM-33 Photoluminescence Study of Doping-induced Crystal Structure Transition in Indium Phosphide Nanowires Hiroki Kameda, Shogo Yanase, Katuhiro Tomioka, Shinjirou Hara, and Junichi Motohisa Hokkaido University, Japan

Page 8: July 27 (Monday)ep2dsmss.sakura.ne.jp/program/mss_final_all_0724.pdf1, J. Yang1, K. Kanisawa2, and S. C. Erwin3 1Paul-Drude-Institut für Festkörperelektronik, Germany, 2NTT Basic

Mo-PM-34 Local Droplet Etching on GaAs (111)A Substrates for Quantum Dots with Reduced Fine Structure Splitting Julian Ritzmann1, Arne Ludwig1, Nandlal Sharma1,2, Dirk Reuter1,2, and Andreas D. Wieck1 1Ruhr-University Bochum, Germany and 2University Paderborn, Germany

- Late news posters - Mo-PM-LN1 Catalytic decoupling of graphene by Au Kyuwook Ihm Pohang Accelerator Laboratory, Korea Mo-PM-LN2 Electron spin coherence near room temperature in magnetic quantum dots F. Moro1, L. Turyanska1, J. Wilman1, A. J. Fielding2, M. W. Fay3, J. Granwehr4, and A. Patane1 1The University of Nottingham, UK, 2 The University of Manchester, UK, 3 Nottingham Nanotechnology and Nanoscience Centre, Uk and 4Forschungszentrum Juelich, Germany

Page 9: July 27 (Monday)ep2dsmss.sakura.ne.jp/program/mss_final_all_0724.pdf1, J. Yang1, K. Kanisawa2, and S. C. Erwin3 1Paul-Drude-Institut für Festkörperelektronik, Germany, 2NTT Basic

July 28 (Tuesday)

Nanophotonics Structures Session Chair: Val Zwiller (Delft University of Technology) Tu-B1-1 (9:00-9:30) III-V nanowire-induced nanocavity in Si photonic crystals (invited) M. Notomi, A. Yokoo, M. D. Birowosuto, M. Takiguchi, K. Tateno, G. Zhang, and E. Kuramochi Nanophotonics Center/NTT Basic Research Laboratories, Japan Tu-B1-2 (9:30-9:45) Controlled Radiative Life Time of Circularly Polarized Emission from Quantum Dots by Three-Dimensional Chiral Photonic Crystals Shun Takahashi, Yasutomo Ota, Takeyoshi Tajiri, Jun Tatebayashi, Satoshi Iwamoto, and Yasuhiko Arakawa University of Tokyo, Japan Tu-B1-3 (9:45-10:00) Quantum tomographic analysis of the time-evolved nonlocal biphoton states from a semiconductor quantum dot Hidekazu Kumano1, Hideaki Nakajima1, Takashi Kuroda2, Takaaki Mano2, Kazuaki Sakoda2, and Ikuo Suemune1 1Hokkaido University, Japan and 2NIMS, Japan Tu-B1-4 (10:00-10:15) Probing equilibrium nuclear spin bath fluctuations in an InGaAs quantum dot using novel "frequency-comb" nuclear magnetic resonance spectroscopy technique Evgeny A. Chekhovich1, Andreas M. Waeber1, Mark Hopkinson1, Ian Farrer2, David A. Ritchie2, Jonas Nilsson3, R. Mark Stevenson3, Anthony J. Bennett3, Andrew J. Shields3, Alexander I. Tartakovskii1, and Maurice S. Skolnick1 1University of Sheffield, UK, 2 University of Cambridge, UK and 3Toshiba Research Europe Limited, UK Tu-B1-5 (10:15-10:30) Temporal dynamics of polariton condensates in acoustic lattices Jakov Buller1, Jasmin Chana2, Klaus Biermann1, Raul E. Balderas-Navarro1,3, Edgar A. Cerda-Méndez1, Francois Fras2, Dmitriy N. Krizhanovskii2, Maurice S. Skolnick2, and Paulo V. Santos1 1Paul-Drude-Institut fuer Festkoerperelektronik, Germany, 2 University of Sheffield, UK and 3Instituto de Investigacion en Comunicacion Optica, Mexico

Coffee Break (30 min.)

Page 10: July 27 (Monday)ep2dsmss.sakura.ne.jp/program/mss_final_all_0724.pdf1, J. Yang1, K. Kanisawa2, and S. C. Erwin3 1Paul-Drude-Institut für Festkörperelektronik, Germany, 2NTT Basic

THz-related Phenomena Session Chair: Manfred Helm (Helmholtz-Zentrum Dresden-Rossendorf) Tu-B2-1 (11:00-11:30) Terahertz Radiation Induced Electric Currents in Graphene and Topological Insulators (invited) S. D. Ganichev University of Regensburg, Germany Tu-B2-2 (11:30-11:45) Terahertz Field Enhancement and Photon-Assisted Tunneling in Single Molecule Transistors Kenji Yoshida1, Kenji Shibata2, and Kazuhiko Hirakawa1 1The University of Tokyo, Japan and 2Tohoku Institute of Technology, Japan Tu-B2-3 (11:45-12:00) Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors Philipp Faltermeier1, Peter Olbrich1, Willibald Probst1, Leonhard Schell1, Takayuki Watanabe2, Stephane A. Boubanga Tombet2, Taiichi Otsuji2, and Sergey Ganichev1 1University of Regensburg, Germany and 2Tohoku University, Japan Tu-B2-4 (12:00-12:15) Terahertz photovoltaic effect in single self-assembled InAs quantum dots Y. Zhang1, K. Shibata1, N. Nagai1, C. Ndebeka-Bandou1,2, G. Bastard1,2, and K. Hirakawa1 1The University of Tokyo, Japan and 2LPA, Ecole Normale Superieure, France Tu-B2-5 (12:15-12:30) Magneto-spectroscopy of InGaAs/AlInGaAs THz Quantum Cascade Lasers Federico Valmorra, Giacomo Scalari, Keita Ohtani, Mattias Beck, and Jerome Faist ETH Zurich, Switzerland

Lunch Break (90 min.)

Novel 2D and Topological Materials Session Chair: Tomoki Machida (The University of Tokyo) Tu-B3-1 (14:00-14:30) Emerging Functions at the Interfaces of Correlated Semiconductors (invited) Masashi Kawasaki The University of Tokyo, Japan

Page 11: July 27 (Monday)ep2dsmss.sakura.ne.jp/program/mss_final_all_0724.pdf1, J. Yang1, K. Kanisawa2, and S. C. Erwin3 1Paul-Drude-Institut für Festkörperelektronik, Germany, 2NTT Basic

Tu-B3-2 (14:30-14:45) Transmission Electron Microscopy Analysis of Sb Single-Crystal Films for Topological Insulator Research Ted D. Mishima, Kaushini S. Wickramasinghe, Chomani K. Gaspe, Shayne Cairns, Joel C. Keay, Sheena Q. Murphy, and Michael B. Santos University of Oklahoma, USA Tu-B3-3 (14:45-15:00) Surface Orientation Dependant Anisotropy of a High Mobility 2DHG in a Strained Germanium Quantum Well Maksym Myronov The University of Warwick, UK Tu-B3-4 (15:00-15:15) Enhancement of Two Dimensionality in Epitaxial Nitrogen Atomic Sheet in GaAs by Rapid Thermal Annealing Yukihiro Harada, Yasuhiro Ogawa, Takeshi Baba, Toshiyuki Kaizu, and Takashi Kita Kobe University, Japan Tu-B3-5 (15:15-15:30) Real-Space Mapping of Nuclear Spin Resonance in a Quantum Hall System Katsushi Hashimoto1,2, Shota Shirai1,3, Touru Tomimatsu1,2, Shyunsuke Taninaka1, Katsumi Nagase1,2, Ken Sato1, and Yoshiro Hirayama1,2,4 1Tohoku University, Japan, 2 ERATO Nuclear Spin Electronics Project, Japan, 3 MD program, Japan and 4WPI-AIMR, Japan

Coffee Break (30 min.)

Page 12: July 27 (Monday)ep2dsmss.sakura.ne.jp/program/mss_final_all_0724.pdf1, J. Yang1, K. Kanisawa2, and S. C. Erwin3 1Paul-Drude-Institut für Festkörperelektronik, Germany, 2NTT Basic

Nanowires and Nanophotonics Session Chair: Paulo Santos (Paul Drude Institute) Tu-B4-1 (16:00-16:30) Quantum Optics with Nanowires (invited) V. Zwiller1, 2, K. Jons2, M. Reimer2, G. Bulgarini2, M. Bouwes Bavinck2, L. Schweickert2, I. Esmaeil Zadeh2, J. Zichi2 1KTH Royal Institute of Technology, Sweden and 2Delft University of Technology, The Netherlands Tu-B4-2 (16:30-16:45) Spin Dynamics in Single Wurtzite GaAs Nanowires Stephan Furthmeier, Florian Dirnberger, Andreas Bayer, Joachim Hubmann, Benedikt Bauer, Josef Zweck, Elisabeth Reiger, Christian Schueller, Tobias Korn, and Dominique Bougeard University of Regensburg, Germany Tu-B4-3 (16:45-17:00) Observation of stimulated emission from GaAs plasmonic nanowires containing InGaAs quantum dots Jinfa Ho, Jun Tatebayashi, Sylvain Sergent, Chee Fai Fong, Satoshi Iwamoto, and Yasuhiko Arakawa Institute for Nano Quantum Information Electronics, Japan Tu-B4-4 (17:00-17:15) Confinement in Thickness-Controlled GaAs Polytype Nanodots Neimantas Vainorius, Sebastian Lehmann, Daniel Jacobsson, Anders Gustafsson, Lars Samuelson, Kimberly A. Dick, and Mats-Erik Pistol Lund University, Sweden Tu-B4-5 (17:15-17:30) Growth of S-K InAs Quantum Dots on Side Facets of GaAs Nanowire on Si (100) Substrate Jinkwan Kwoen, Katsuyuki Watanabe, Satoshi Iwamoto, and Yasuhiko Arakawa The University of Tokyo, Japan

Poster Session -II (17:30-19:30) Tu-PM-1 Harvesting dissipated energy with a mesoscopic ratchet Benoit Roche1, Preden Roulleau1, Thibaut Jullien1, Yodchay Jompol1, Ian Ferrer2, David A. Ritchie2, and Denis C. Glattli1 1SPEC/CEA, France and 2University of Cambridge, UK Tu-PM-2 Role of Coulombic donors in terahertz cascade structures Camille Ndebeka-Bandou1,2, Francesca Carosella2, and Gerald Bastard2 1ETH Zurich, Switzerland and 2Laboratoire Pierre Aigrain, Ecole Normale Superieure, France

Page 13: July 27 (Monday)ep2dsmss.sakura.ne.jp/program/mss_final_all_0724.pdf1, J. Yang1, K. Kanisawa2, and S. C. Erwin3 1Paul-Drude-Institut für Festkörperelektronik, Germany, 2NTT Basic

Tu-PM-3 Band structures and Γ-X crossover of (GaAs)10/(AlAs)n nanostructures superlattices for near infrared detection at low temperature Driss Barkissy1, Abdelhakim Nafidi1, Abderrazak Boutramine1, Hicham Charifi1, Abdellatif Elanique1, Hassan Chaib1, and Bernabe S. Mari2 1University Ibn Zohr, Morocco and 2Universitat Politecnica de Valencia, Spain Tu-PM-4 X-STM observation on (110) surface of AlSb/InAs/GaSb/AlSb hetero-structure Tatsuhito Ando, Shigeru Kaku, Masayuki Tsukui, and Junji Yoshino Tokyo Institute of Technology, Japan Tu-PM-5 The Exposure of the Underlying Anti-Ferromagnetism in Paramagnetic CdSe:Mn Nanocrystals Shou-Jyun Zou, Sheng-Tsung Wang, Ming-Fan Wu, Wen-Bin Jian, and Shun-Jen Cheng National Chiao Tung University, Taiwan Tu-PM-6 Electron magneto-tunneling through single self-assembled InAs quantum dashes coupled to ferromagnetic leads Kenji Shibata1,2, Nikola Pascher3, Stephan Schnez3, Thomas Ihn3, Klaus Ensslin3, and Kazuhiko Hirakawa1 1The University of Tokyo, Japan, 2 Tohoku Institute of Technology, Japan and 3ETH Zurich, Switzerland Tu-PM-7 Relaxation of Parity Selection Rules in Colloidal PbS Quantum Dots Embedded in Polymer Films Mai Hirota, Tadayoshi Shibakawa, Yukihiro Harada, and Takashi Kita Kobe University, Japan Tu-PM-8 Dynamic Nuclear Spin Polarization by P-shell Carriers in Single Quantum Dots Chee Fai Fong, Yasutomo Ota, Edmund Harbord, Satoshi Iwamoto, and Yasuhiko Arakawa The University of Tokyo, Japan Tu-PM-9 Anisotropy of electron and hole in-plane g-factors in single InAs/GaAs quantum rings Takahiro Tominaga1, Reina Kaji1, Yu-Nien Wu2, Shun-Jeng Cheng2, and Satoru Adachi1 1Hokkaido University, Japan and 2National Chiao Tung University, Taiwan Tu-PM-10 Excitation-intensity dependence of Transient Grating signal in Semiconductor Quantum Dots Tetsuya Watanuki1, Takumi Sasaki1, Yuki Sato1, Yasuyoshi Mitsumori1, Keiichi Edamatsu1, Kouichi Akahane2, and Naokatsu Yamamoto2 1Tohoku University, Japan and 2National Institute of Information and Communications Technology, Japan

Page 14: July 27 (Monday)ep2dsmss.sakura.ne.jp/program/mss_final_all_0724.pdf1, J. Yang1, K. Kanisawa2, and S. C. Erwin3 1Paul-Drude-Institut für Festkörperelektronik, Germany, 2NTT Basic

Tu-PM-11 Energy Spectrum of Confined Positively Charged Excitons from Magneto-PL/PLE Studies of Single Quantum Dots Maciej R. Molas1,2, Aurelien A. L. Nicolet1, Arkadiusz Wójs3, Adam Babi?ski2, and Marek Potemski1 1CNRS-UJF-UPS-INSA, France, 2 University of Warsaw, Poland and 3Wroclaw University of Technology, Poland Tu-PM-12 Transport properties of InAs self-assembled quantum dots with different electrode geometries Ryoki Shikishima1, Haruki Kiyama1, Shoji Baba2, Takashi Hirayama1, Naomi Nagai2, Kazuhiko Hirakawa2, Seigo Tarucha2,3, and Akira Oiwa1 1Osaka University, Japan, 2 The University of Tokyo, Japan and 3RIKEN, Japan Tu-PM-13 Visibility recovery of single-photon states originating from quantum-dot-in-fiber in unbalanced Mach-Zehender interferometer Hirotaka Sasakura, Yuki Komori, Takuya Sato, and Shunichi Muto Hokkaido University, Japan Tu-PM-14 Excitonic Transitions in Thin Films of Layered Semiconductor BiI3 Grown by a Hot-Wall Technique Ryuta Sakamoto1, Tomohiro Ueda1, Kazunori Iwamitsu1, Fusao Ichikawa1, Katsuyoshi Watanabe2, Tomoshige Shimamoto1, and Ichiro Akai1 1Kumamoto University, Japan and 2University of Yamanashi, Japan Tu-PM-15 Effects of homogeneous and inhomogeneous broadenings of excitons on amplitude of exciton quantum beats Osamu Kojima and Takashi Kita Kobe University, Japan Tu-PM-16 Gate-controlled plasmonics in single nanostructures Francesco Rossella1, Andrea Arcangeli1, Daniele Ercolani1, Lucia Sorba1, Alessandro Tredicucci1,2, Fabio Beltram1, and Stefano Roddaro1 1NEST, Scuola Normale Superiore & Istituto Nanoscienze-CNR, Italy and 2Universita di Pisa, Italy Tu-PM-17 Photo-induced Voltage in Nanoporous Gold Film Marjan Akbari and Teruya Ishihara Tohoku University, Japan Tu-PM-18 Spin-injection through Fe/GaAs Schottky contacts Lennart-Knud Liefeith, Rajkiran Tholapi, Max Hänze, Ann-Kathrin Michel, Taras Slobodskyy, and Wolfgang Hansen Hamburg University, Germany

Page 15: July 27 (Monday)ep2dsmss.sakura.ne.jp/program/mss_final_all_0724.pdf1, J. Yang1, K. Kanisawa2, and S. C. Erwin3 1Paul-Drude-Institut für Festkörperelektronik, Germany, 2NTT Basic

Tu-PM-19 Temperature Dependence of Anisotropic Spin Relaxation Time in n-GaAs/AlGaAs (110) QWs Yuzo Ohno, Tomotaka Matsuda, Mayu Okumura, Ken Watanabe, and Fumihide Koshisaka University of Tsukuba, Japan Tu-PM-20 Electronic Structures and Magnetocrystalline Anisotropy of Rare-Earth Ultra-Thin Films Yushi Ikeura, Kenji Nawa, Kohji Nakamura, Toru Akiyama, and Tomonori Ito Mie University, Japan Tu-PM-21 Room-temperature local ferromagnetism and nano-scale domain growth in the ferromagnetic semiconductor Ge1-xFex Yuki K. Wakabayashi1, Shoya Sakamoto1, Yukiharu Takeda2, Keisuke Ishigami1, Yuji Saitoh2, Hiroshi Yamagami2, Atsushi Fujimori1, Masaaki Tanaka1, and Shinobu Ohya1 1The University of Tokyo, Japan and 2JAEA, Japan Tu-PM-22 Intrinsic Magneto-Optical Spectra of GaMnAs Hiroshi Terada, Shinobu Ohya, and Masaaki Tanaka The University of Tokyo, Japan Tu-PM-23 Room temperature visible-light electroluminescence in Si p-n junctions with an epitaxial Mn-doped Si layer Pham Nam Hai1,2, Daiki Maruo1, Le Duc Anh1, and Masaaki Tanaka1 1The University of Tokyo, Japan and 2Tokyo Institute of Technology, Japan Tu-PM-24 Optical spin transfer torque driven domain wall motion in ferromagnetic semiconductor Andrew J. Ramsay1, Pierre E. Roy1, James A. Haigh1, Ruben M. Otxoa1, Andrew C. Irvine2, Tomas Janda3, Richard P. Campion4, Bryan L. Gallagher4, and Joerg Wunderlich1 1Hitachi Cambridge Laboratory, UK, 2 University of Cambridge, UK, 3 Charles University in Prague, Czech and 4University of Nottingham, UK Tu-PM-25 Effect of passivation on AlGaN/GaN High-Electron Mobility Transistors Y. S. Lin and S. F. Lin National Dong Hwa University, Taiwan Tu-PM-26 ESR of Lightly Doped Si:P System Aimed for High Magnetic Field to Temperature Ratio Yutaka Fujii1, Akira Fukuda2, Seitaro Mitsudo1, Kazuya Morimoto3, Takao Mizusaki1, Minchan Gwak4, SangGap Lee4, Akira Matsubara5, Tomohiro Ueno5, Soonchil Lee6, and Sergey Vasiliev7 1University of Fukui, Japan, 2 Hyogo College of Medicine, Japan, 3 University of Fukui, Japan, 4 KBSI, Korea, 5 Kyoto University, Japan, 6 Korea Advanced Institute of Science and Technology, Korea and 7University of Turku, Finland

Page 16: July 27 (Monday)ep2dsmss.sakura.ne.jp/program/mss_final_all_0724.pdf1, J. Yang1, K. Kanisawa2, and S. C. Erwin3 1Paul-Drude-Institut für Festkörperelektronik, Germany, 2NTT Basic

Tu-PM-27 Hybrid Optical-Electrical Detection of Donor Electron Spins with Bound Excitons in Silicon Philipp Ross1, Cheuk C. Lo1, Matias Urdampilleta1, M. Fernando Gonzalez-Zalba2, John Mansir1, Stephen A. Lyon3, Michael L. W. Thewalt4, and John J. L. Morton1 1University College London, UK, 2 Hitachi Cambridge Laboratory, UK, 3 Princeton University, USA and 4Simon Fraser University, Canada Tu-PM-28 High-frequency surface acoustic waves on gated graphene Alberto Hernández-Mínguez, Abbes Tahraoui, Joao Marcelo J. Lopes, and Paulo V. Santos Paul-Drude-Institut fuer Festkoerperelektronik, Germany Tu-PM-29 High-frequency current oscillations in graphene-boron nitride resonant tunnel diodes Jennifer Gaskell1, Timothy M. Fromhold1, Laurence Eaves1,2, Konstantin S. Novoselov2, and Mark T. Greenaway1 1The University of Nottingham, UK and 2The University of Manchester, UK Tu-PM-30 Artificial Graphene in Nanopatterned GaAs Quantum Wells Sheng Wang1, Diego Scarabelli1, Yuliya Y. Kuznetsova1, Loren N. Pfeiffer2, Ken West2, Vittorio Pellegrini3, Michael J. Manfra4, Shalom J. Wind1, and Aron Pinczuk1 1Columbia University, USA, 2 Princeton University, USA, 3 Italian Institute of Technology, Italy and 4Purdue University, USA Tu-PM-31 The Features of Electrostatic Actuation in Nanoelectromechanical Systems on the Basis of GaAs/AlGaAs Heterostructures Containing Two-Dimensional Electron Gas Andrey A. Shevyrin1,2, Arthur G. Pogosov1,2, Maxim V. Budantsev1, Askhat K. Bakarov1,2, Alexander I. Toropov1, and Alexander A. Shklyaev1,2 1Rzhanov Institute of Semiconductor Physics, Russia and 2Novosibirsk State University, Russia Tu-PM-32 Bias Voltage Dependence of Electroluminescence Properties of Inorganic-organic Hybrid Light-emitting Diodes Containing Core-shell Quantum Dot Emitters Yasufumi Hasegawa, Keisuke Hata, Akira Emoto, and Naoki Ohtani Doshisha University, Japan Tu-PM-33 Scanning gate microscopy of electron transport in the quantum Hall effect breakdown regime Shunsuke Taninaka1, Katsusi Hashimoto1,2, Shota Shirai1, Toru Tomimatsu1,2, Ken Sato1,2, Katsumi Nagase1,2, and Yoshiro Hirayama1,2 1Tohoku University, Japan and 2ERATO Nuclear Spin Electronics Project, Japan Tu-PM-34 Can Few-Atom Thick Nanowires of Si:P Overcome Anderson Localization? Amintor Dusko, Andre L. Saraiva, and Belita Koiller Universidade Federal do Rio de Janeiro, Brazil

Page 17: July 27 (Monday)ep2dsmss.sakura.ne.jp/program/mss_final_all_0724.pdf1, J. Yang1, K. Kanisawa2, and S. C. Erwin3 1Paul-Drude-Institut für Festkörperelektronik, Germany, 2NTT Basic

- Late news posters - Tu-PM-LN1 Optically induced room-temperature strong coupling in mechanical resonators Ryuichi Ohta1, Hajime Okamoto1, Rudolf Hey2, Klaus Juergen Friedland2, and Hiroshi Yamaguchi1 1NTT Basic Research Lab., Japan and 2Paul-Drude-Institut fur Festkorperelektronik, Germany Tu-PM-LN2 Self-Aligned Gate-All-Around InAs Nanowire Field-Effect Transistors Satoshi Sasaki, Kouta Tateno, Guoqiang Zhang, Shiro Saito, and Hideki Gotoh NTT Basic Research Laboratories, Japan

Page 18: July 27 (Monday)ep2dsmss.sakura.ne.jp/program/mss_final_all_0724.pdf1, J. Yang1, K. Kanisawa2, and S. C. Erwin3 1Paul-Drude-Institut für Festkörperelektronik, Germany, 2NTT Basic

July 29 (Wednesday)

Plenary Session - III Session Chair: Junsaku Nitta (Tohoku University) We-PL-1 (9:00-9:40) Transport Properties of Graphene-Based Van Der Waals Heterostructures (plenary) Andre Geim University of Manchester, UK

Special Session -Atomic Layer Heterostructures- We-SP-1 (9:40-10:05) Quantum transport in van der Waals junctions of graphene and 2D materials (invited) Tomoki Machida The University of Tokyo, Japan We-SP-2 (10:05-10:30) Two-Dimensional Magnetotransport in a Black Phosphorus Naked Quantum Well (invited) Thomas Szkopek1, Vahid Tayari1, Nicholas Hemsworth1, Ibrahim Fakih1, Alexandre Favron2, Etienne Gaufrès2, Richard Martel2, and Guillaume Gervais1 1McGill University, Canada and 2Universite de Montreal, Canada

Coffee Break (20 min.)

Session Chair: Hiroshi Yamaguchi (NTT Basic Research Laboratories) We-SP-3 (10:50-11:15) Quantum Oscillations in Few-layer Black Phosphorus Heterostructures (invited) Chun Ning Lau University of California, Riverside, USA We-SP-4 (11:15-11:40) 2D Crystal Nanomechanical Resonators Coupled to Superconducting Cavities (invited) V. Singh, S. J. Bosman, B. H. Schneider, Y. M. Blanter, A. Castellanos-Gomez, G. A. Steele Delft University of Technology, The Netherlands We-SP-5 (11:40-12:05) Transport Studies in Encapsulated Black Phosphorus Field Effect Transistors (invited) Barbaros Özyilmaz National University of Singapore, Singapore

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Late news papers We-LN-1 (12:05-12:20) Imaging Magnetic Focusing of Electrons in Graphene S. Bhandari, GH. Lee, P. Kim, and R.M. Westervelt Harvard University, USA We-LN-2 (12:20-12:35) Generation of heralded entanglement between distant quantum dot hole spins Aymeric Delteil1, Zhe Sun1, Wei-bo Gao1,2, Emre Togan1, Stefan Faelt1, and Ataç Imamoğlu 1ETH Zurich, Switzerland and 2Nanyang Technological University, Singapore

Conference Excursion and Banquet

Page 20: July 27 (Monday)ep2dsmss.sakura.ne.jp/program/mss_final_all_0724.pdf1, J. Yang1, K. Kanisawa2, and S. C. Erwin3 1Paul-Drude-Institut für Festkörperelektronik, Germany, 2NTT Basic

July 30 (Thursday)

Spintronics - II Session Chair: Atsushi Tackeuchi (Waseda University) Th-B1-1 (9:00-9:30) Chirality in nanophotonic waveguides with embedded quantum emitters (invited) Rikki J. Coles, James E. Dixon, David M. Price, Ben Royal, Edmund Clarke, Mark A. Fox, Maurice S. Skolnick, and Maxim N. Makhonin University of Sheffield, UK Th-B1-2 (9:30-9:45) Nuclear magnetic resonance on a single quantum dot Mathieu Munsch1, Gunter Wüst1, Andreas V. Kuhlmann1, Arne Ludwig2, Andreas D. Wieck2, Dirk Reuter3, Fei Xue1, Martino Poggio1, and Richard J. Warburton1 University of Basel, Switzerland Th-B1-3 (9:45-10:00) On-demand High Fidelity Initialization of Long-lived Hole Spin Qubits by Control of Quantum Dot Fine-structure Feng Liu1, Alistair J. Brash1, Luis M. P. P. Martins1, John H. Quilter1,2, Andrew J. Ramsay3, Maurice S. Skolnick1, and Anthony M. Fox1 1University of Sheffield, UK, 2 University of London, UK and 3Hitachi Europe Ltd., UK Th-B1-4 (10:00-10:15) Is quantum nature of bath spins relevant in the central spin problem? Tomasz Dietl 1Polish Academy of Sciences, Poland, 2 University of Warsaw, Poland and 3Tohoku University, Japan Th-B1-5 (10:15-10:30) Band structure near the Fermi level in GaMnAs studied by time-resolved light-induced reflectivity measurements Tomoaki Ishii1, Tadashi Kawazoe1, Yusuke Hashimoto2, Hiroshi Terada1, Iriya Muneta1, Motoichi Ohtsu1, Masaaki Tanaka1, and Shinobu Ohya1 1The University of Tokyo, Japan and 2Radboud Univ. Nijmegen, The Netherlands

Coffee Break (30 min.)

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Phononics and Mechanics Session Chair: Stefan Fölsch (Paul Drude Institute) Th-B2-1 (11:00-11:30) Correlated Phonon Pair Generation in an Electromechanical Resonator (invited) Imran Mahboob, Hajime Okamoto, and Hiroshi Yamaguchi NTT Basic Research Laboratories, Japan Th-B2-2 (11:30-12:00) Propagating Phonons in the Quantum Regime (invited) M. V. Gustafsson1,2, T. Aref1, A. Frisk Kockum1, M. K. Ekström1, G. Johansson1, and P. Delsing1 1Microtechnology and Nanoscience, Chalmers University of technology, Sweden and 2Depts. of Chemistry and Physics, Columbia University, USA Th-B2-3 (12:00-12:15) Broadband Frequency Conversion in an Electromechanical Phonon Waveguide Daiki Hatanaka, Imran Mahboob, Koji Onomitsu, and Hiroshi Yamaguchi NTT Basic Research Laboratories, Japan Th-B2-4 (12:15-12:30) Quantum-dot opto-mechanics probed with resonance fluorescence Mathieu Munsch1, Andreas Kuhlmann1, Julien Claudon2, Jean-Michel Gérard2, and Richard J. Warburton1 1University of Basel, Switzerland and 2NPSC/SP2M/INAC/CEA, France

Lunch Break (90 min.)

Nanowires Session Chair: Hideki Gotoh (NTT Basic Research Laboratories) Th-B3-1 (14:00-14:30) Rationally Designed Single-Crystalline Nanowire Networks (invited) Diana Car1, Jia Wang1, Marcel A. Verheijen1,2, Erik P.A.M. Bakkers1,3, Sebastien R. Plissard3,4,5 1Eindhoven University Technology, The Netherlands, 2Philips Innovation Services Eindhoven, The Netherlands, 3Delft University Technology, The Netherlands, 4CNRS, LAAS, France, and 5University of Toulouse, France Th-B3-2 (14:30-14:45) Experimental Progress on Majorana Fermions in Semiconductor Nanowire Devices Hao Zhang1, Onder Gul1, Michiel de Moor1, David van Woerkom1, Kun Zuo1, Vincent Mourik1, Maja Cassidy1, Attila Geresdi1, Diana Car2, Erik Bakkers2, and Leo P. Kouwenhoven1 1Delft University of Technology, The Netherlands and 2Technische Universiteit Eindhoven, The Netherlands

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Th-B3-3 (14:45-15:00) Growth of InAs Nanowires with Controlled Morphologies and Crystal Structures Ming Li1, Jingyun Wang1, Kan Li1, Yingjie Xing1, and Hongqi Xu1,2 1Peking University, China and 2Lund University, Sweden Th-B3-4 (15:00-15:15) Selective Radial Heterostructured Nanowires on Crystal Phase Engineered Core Templates Luna Namazi, Malin Nilsson, Sepideh Gorji Ghalamestani, Sebastian Lehmann, Claes Thelander, and Kimberly Dick Lund University, Sweden Th-B3-5 (15:15-15:30) Quasi-one-dimensional graphene nanostructure on corrugated SiC surfaces Satoru Tanaka1, Kohei Fukuma1, Kohei Morita1, Shingo Hayashi1, Takashi Kajiwara1, Anton Visikovskiy1, Takushi Iimori2, Koichiro Ienaga2, Koichiro Yaji2, Kan Nakatsuji2, Fumio Komori2, Hirokazu Tanaka3, Akinobu Kanda3, Nguyen T. Cuong4, and Susumu Okada3 1Kyushu University, Japan, 2 The University of Tokyo, Japan, 3 University of Tsukuba, Japan and 4AIST, Japan

Coffee Break (30 min.)

EP2DS-MSS Joint Session : 2D-materials - I Session Chair: Tsuneya Ando (Tokyo Institute of Technology) Th-B4-1 (16:00-16:15) Picosecond photodetection in graphene/TMD/graphene heterostructures (MSS) Mathieu Massicotte1, Peter Schmidt1, Fabien Vialla1, Kenji Watanabe2, Takashi Taniguchi2, Klaas-Jan Tielrooij1, and Frank H. L. Koppens1 1ICFO Institut de Ciencies Fotoniques, Spain and 2National Institute for Materials Science, Japan Th-B4-2 (16:15-16:30) Large Current Modulation in Graphene/TMD/Metal Vertical Heterostructures (MSS) Rai Moriya, Yohta Sata, Takehiro Yamaguchi, Yoshihisa Inoue, Naoto Yabuki, Satoru Masubuchi, and Tomoki Machida The University of Tokyo, Japan Th-B4-3 (16:30-16:45) Landau level spectroscopy reveals the chirality and Klein tunnelling of Dirac-Weyl Fermions in twisted graphene tunnel transistors (EP2DS) Mark T. Greenaway1, Evgenii E. Vdovin1,3, Artem Mishchenko2, Oleg Makarovsky1, Amalia Patane1, Yang Cao2, Andrey V. Kretinin2, Mengjian Zhu2, Sergey V. Morozov3, Konstantin S. Novoselov2, Andre K. Geim2, Timothy M. Fromhold1, and Laurence Eaves1 1The University of Nottingham, UK, 2 The University of Manchester, UK and 3Institute of Microelectronics Technology and High Purity Materials, Russia

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Th-B4-4 (16:45-17:00) Coupling Phenomena in Twisted Bilayers of Folded Graphene (EP2DS) Johannes C. Rode1, Hennrik Schmidt1,2, Dmitri Smirnov1, and Rolf J. Haug1 1Leibniz Universitaet Hannover, Germany and 2National University of Singapore, Singapore Th-B4-5 (17:00-17:15) Manipulating the Lifshitz Transition in Bilayer Graphene (EP2DS) Anastasia Varlet1, Marcin Mucha-Kruczynski2, Dominik Bischoff1, Pauline Simonet1, Takashi Taniguchi3, Kenji Watanabe3, Vladimir I. Fal'ko4, Thomas Ihn1, and Klaus Ensslin1 1ETH Zurich, Switzerland, 2 University of Bath, UK, 3 National Institute for Materials Science, Japan and 4Lancaster University, UK Th-B4-6 (17:15-17:30) Physics and applications of van der Waals InSe nanosheets and heterostructures (MSS) Amalia Patane The University of Nottingham, UK

Poster Session -III (17:30-19:30) Th-PM-1 New concept for ballistic rectification based on electron trajectory refraction Michael Szelong, Arne Ludwig, Andreas D. Wieck, and Ulrich Kunze Ruhr-University Bochum, Germany Th-PM-2 Characterization of GaSb/GaAs Quantum Dot Solar Cells with Deep Energy States Takeshi Noda, Martin Elborg, Takaaki Mano, Takuya Kawazu, Liyuan Han, and Hiroyuki Sakaki National Institute for Materials Science, Japan Th-PM-3 2D Islands by growth model with 2 kinds of diffusive atoms Shunicni Muto, Ryo Yamauchi, Osamu Muramatsu, Xiangmeng Lu, Masataka Koyama, Yoshiaki Nakata, and Hirotaka Sasakura Hokkaido University, Japan Th-PM-4 Direct Observation of the Phonon Bottleneck in GaAs/AlGaAs Quantum Dots Yu-Chen Chang, Alexander J. Robson, Samuel Harrison, Qiandong Zhuang, and Manus Hayne Lancaster University, UK Th-PM-5 Tunable Quantum Confinement in Ultrathin, Optically active GaAs Nanowires via Reverse-reaction Growth Bernhard Loitsch1, Daniel Rudolph1, Stefanie Morkoetter1, Markus Doeblinger2, Julia Winnerl1, Gianluca Grimaldi1, Lukas Hanschke1, Sonja Matich1, Eric Parzinger1, Ursula Wurstbauer1, Gerhard Abstreiter1, Jonathan Finley1, and Gregor Koblmueller1 1Technische Universitaet Muenchen, Germany and 2Ludwig-Maximilians-Universitaet Munich, Germany

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Th-PM-6 Mechanisms of Photoluminescence Enhancement of Vertically-aligned ZnO Nanorods by Thermal Annealing Process Da-Ren Hang, Sk Emdadul Islam, Krishna H. Sharma, Shiao-Wei Kuo, Cheng-Zu Zhang, and Jun-Jie Wang National Sun Yat-sen University, Taiwan Th-PM-7 Dissipative quantum state preparation in single quantum dots over picosecond timescales Per-Lennart Ardelt1, Alexander Bechtold1, Tobias Simmet1, Kevin Fischer2, Lukas Hanschke1, Manuel Koller1, Kai Müller1,2, and Jonathan Finley1 1TU Muenchen, Germany and 2Stanford University, USA Th-PM-8 Coherently strained wurtzite InAsP-InP core-shell nanowires David Goransson1, Magnus T. Borgström1, Dan Hessman1, Simon Abay1, Maria E. Messing1, Yuqing Q. Huang2, Irina A. Buyanova2, Weimin M. Chen2, and Hongqi Q. Xu1 1Lund University, Sweden and 2Linkoping University, Sweden Th-PM-9 Capacitance-Voltage Spectroscopy of InAs Quantum Dots under Tunable Piezoelectric Induced Biaxial Stress Sascha R. Valentin1, Arne Ludwig1, Andreas D. Wieck1, and Dirk Reuter2 1Ruhr Universitaet Bochum, Germany and 2Universitaet Paderborn, Germany Th-PM-10 Site-Controlled Growth of III/V Semiconductor Nanowires Induced by Focused Ion Beam Sven E. Scholz, Ruediger Schott, Arne Ludwig, and Andreas D. Wieck Ruhr-University Bochum, Germany Th-PM-11 Monolithically integrated core-shell GaAs-AlGaAs nanowire lasers on silicon Benedikt Mayer, Lisa Janker, Bernhard Loitsch, Julian Treu, Gerhard Abstreiter, Gregor Koblmueller, and Jon Finley TU-Munich, Germany Th-PM-12 Coherent dynamics of excitons in strain-compensated InAs quantum dots investigated using three-pulse photon echo Yuto Arai1, Shota Ichikawa1, Kouichi Akahane2, and Junko Ishi-Hayase1 1Keio University, Japan and 2National Institute of Information and Communications Technology (NICT), Japan Th-PM-13 Investigation of Carriers Thermal Transfer in Self-asssembled Quantum Dots Grown on (311)B GaAs by Temperature Dependence Photoluminescence Xiangmeng Lu, Akihiro Kawaguchi, Naoto Kumagai, Takahiro Kitada, and Toshiro Isu Tokushima University, Japan

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Th-PM-14 Manipulating Spin Textures of Polariton Condensates in a Tunable Hemispherical Microcavity L. Giriunas1, S. Dufferwiel1, F. Li1, E. Cancellieri1, A. Trichet2, D. M. Whittaker1, P. M. Walker1, E. Clarke1, I. Farrer3, D. A. Ritchie3, J. M. Smith2, M. S. Skolnick1, and D. N. Krizhanovskii1 1University of Sheffield, UK, 2 University of Oxford, UK and 3University of Cambridge, UK Th-PM-15 Population dynamics among excitonic levels in GaAs quantum wells Harald Schneider1, Jayeeta Bhattacharyya1, Sabine Zybell1,2, Faina Eser1,2, Manfred Helm1,2, Lukas Schneebeli3, Christoph N. Böttge3, Benjamin Breddermann3, Mackillo Kira3, and Stephan W. Koch3 1Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Germany, 2 Technische Universität, Germany and 3Philipps-Universität, Germany Th-PM-16 Time-reversal-violating photonic topological insulators with magnetoelectric media Tetsuyuki Ochiai National Institute for Materials Science, Japan Th-PM-17 Optical properties of bowtie nano-antennas and their coupling to proximal quantum emitters Armin Regler1, Konrad Schraml1, Anna A. Lyamkina2, Johannes Bartl1, Glenn Glashagen1, Sergey P. Moshchenko2, Jonathan J. Finley1, and Michael Kaniber1 1Technische Universitaet Muenchen, Germany and 2A. V. Rzhanov Insitute of Semiconductor Physics SB RAS, Russia Th-PM-18 Improved Hole g-Tensor Modulation Resonances of Stressed Droplet Epitaxial GaAs Quantum Dots by Mechanical Control Ming-Fan Wu, Yo-Nian Wu, and Shun-Jen Cheng National Chiao Tung University, Taiwan Th-PM-19 Observation of spin relaxation in GaInNAs(Sb)/GaNAs(Sb)/GaAs quantum well Masaki Asakawa1, Kazuki Honda1, Naoki Yamamoto1, Lianhe Li2, Jean C. Harmand3, Shulong Lu4, and Atsushi Tackeuchi1 1Waseda University, Japan, 2 University of Leeds, UK, 3 Laboratory for Photonics and Nanostructures-CNRS, France and 4Suzhou Institute of Nano-tech and Nano-bionics, CAS, China Th-PM-20 Ferromagnetism of Zinc oxides enhanced with antiferromagnetic singlet bonds from doped Co Shih-Jye Sun1 and Chang-Feng Yu2 1National University of Kaohsiung, Taiwan and 2National Chiayi University, Taiwan Th-PM-21 Nanoscale spin rectifiers controlled by the Stark effect Francesco Rossella1, Andrea Bertoni2, Daniele Ercolani1, Massimo Rontani2, Lucia Sorba1, Fabio Beltram1, and Stefano Roddaro1 1NEST, Scuola Normale Superiore & Istituto Nanoscienze-CNR, Italy and 2S3, Istituto Nanoscienze-CNR, Italy

Page 26: July 27 (Monday)ep2dsmss.sakura.ne.jp/program/mss_final_all_0724.pdf1, J. Yang1, K. Kanisawa2, and S. C. Erwin3 1Paul-Drude-Institut für Festkörperelektronik, Germany, 2NTT Basic

Th-PM-22 Observation of Hole-Spin Superposition in GaAs Quantum Well under Magnetic Field Tetsu Ito1, Hideki Gotoh2, Masao Ichida2, and Hiroaki Ando3 1Shizuoka University, Japan, 2 NTT Basic Research Laboratories, Japan and 3Konan University, Japan Th-PM-23 Optical study of temperature-dependent spin injection and relaxation dynamics in InGaAs quantum well-quantum dot tunnel-coupled structure Shula Chen, Takayuki Kiba, Junichi Takayama, and Akihiro Murayama Hokkaido University, Japan Th-PM-24 Improved Spin-Injection Efficiency from Epitaxial Fe to Two-Dimensional Electrons Yoshiaki Hashimoto, Noriyoshi Izumi, Taketomo Nakamura, and Shingo Katsumoto The University of Tokyo, Japan Th-PM-25 Nuclear Spin Environment in Droplet Epitaxy-Grown GaAs/AlAs Quantum Dots Ata Ulhaq1, Fei Ding2, Eugenio Zallo2, Oliver G. Schmidt2, Alexander I. Tartakovskii1, Maurice S. Skolnick1, and Evgeny Chekhovich1 1University of Sheffield, UK and 2IFW Dresden, Germany Th-PM-26 Non-classical Light Generation from Isoelectronic Traps Embedded in Photonic Crystal Microcavities Michio Ikezawa1, Yuuta Yamada1, Yoshiki Sakuma2, Liao Zhang1, Hiroyuki Takeda2, Naoki Ikeda2, Yoshimasa Sugimoto2, Kazuaki Sakoda2, and Yasuaki Masumoto1 1University of Tsukuba, Japan and 2National Institute for Materials Science, Japan Th-PM-27 Semiconductor - cold atom hybrid quantum system Mathieu Munsch1, Jan-Philipp Jahn1, Lucas Beguin1, Andreas V. Kuhlmann1, Aline Faber1, Tobias Kampschulte1, Andreas Jöckel1, Armando Rastelli2, Fei Ding3, Oliver G. Schmidt3, Nicolas Sangouard1, Philipp Treutlein1, and Richard J. Warburton1 1University of Basel, Switzerland, 2 Johannes-Kepler University, Germany and 3Leibniz Institute for solid-state and material research, Germany Th-PM-28 Facile Method of pn Junction Formation on Graphene by Plasma Treatment Kuei-Yi Lee1, Ching-Chun Fan1, Yi-Ting Shih1, Hsin-Yueh Chang1, Wei-Jhih Su1, Yi-Ping Wang2, Hung-Pin Hsu3, and Ying-Sheng Huang1 1National Taiwan University of Science and Technology, Taiwan and 2Ming Chi University of Technology, Taiwan Th-PM-29 Stability analysis and improvement of HNO3-doped graphene Lorenzo D'Arsie, Santiago Esconjauregui, Robert Weatherup, and John Robertson University of Cambridge, UK

Page 27: July 27 (Monday)ep2dsmss.sakura.ne.jp/program/mss_final_all_0724.pdf1, J. Yang1, K. Kanisawa2, and S. C. Erwin3 1Paul-Drude-Institut für Festkörperelektronik, Germany, 2NTT Basic

Th-PM-30 Writing Characteristics of Organic Memory Transistors with Embedded Monolayer of Semiconductor Colloidal Nano-dots Fumihoru Nakano, Hideki Sakagawa, Kazuyuki Uno, and Ichiro Tanaka Wakayama University, Japan Th-PM-31 Electrical Properties of Oxygen Adsorption Effect on RuO2/CNT/graphene Yi-Ping Wang1, Wei-Jhih Su1, Hung-Pin Hsu2, Kuei-Yi Lee1, and Ying-Sheng Huang1 1National Taiwan University of Science and Technology, Taiwan and 2Ming Chi University of Technology, Taiwan Th-PM-32 Influence of the oxygen working pressure on the electrochromic properties of WO3 thin films grown by pulsed laser deposition Chang-Feng Yu1, Shih-Jye Sun2, and Sen-Yang Lee 1National Chiayi University, Taiwan and 2National University of Kaohsiung, Taiwan Th-PM-33 Repeatable synthesis of indium antimonide nanowires by chemical vapor deposition in naturally cooling step Kan Li Peking University, China

- Late news posters - Th-PM-LN1 Interference between a Quantum Dot Single -Photon Source and a Telecom-Wavelength Laser M. Felle1,2, J. Huwer1, R. M. Stevenson1, J. Skiba-Szymanska1, M. B. Ward1, I. Farrer2, R. V. Penty2, D. A. Ritchie2, and A. J. Shields1 1Toshiba Research Europe Limited, UK and 2University of Cambridge, UK

Page 28: July 27 (Monday)ep2dsmss.sakura.ne.jp/program/mss_final_all_0724.pdf1, J. Yang1, K. Kanisawa2, and S. C. Erwin3 1Paul-Drude-Institut für Festkörperelektronik, Germany, 2NTT Basic

July 31 (Friday)

EP2DS-MSS Joint Session : 2D-materials - II Session Chair: Amalia Patane (Univ. Nottingham) Fr-B1-1 (9:00-9:30) Probing the valley Hall effect in MoS2 transistors (invited) Kin Fai Mak Penn State University, USA Fr-B1-2 (9:30-9:45) Tuning of valley polarization in few-layer MoS2 by electric field induced symmetry breaking (MSS) Jakob Wierzbowski1, Julian Klein1, Florian Heimbach1, Michael Kaniber1, Kai Mueller1,2, and Jonathan J. Finley1 1Technische Universitaet Muenchen, Germany and 2Stanford University, USA Fr-B1-3 (9:45-10:00) Valley Hall effect in electrically spatial inversion symmetry broken bilayer graphene (EP2DS) Yuya Shimazaki1, Michihisa Yamamoto1,2, Ivan V. Borzenets1, Kenji Watanabe3, Takashi Taniguchi3, and Seigo Tarucha1,4 1The University of Tokyo, Japan, 2 PRESTO, JST, Japan, 3 National Institute for Materials Science, Japan and 4RIKEN, Japan Fr-B1-4 (10:00-10:15) Valley Hall Effect in Graphene with Gap Studied in Self-Consistent Born Approximation (EP2DS) Tsuneya Ando Tokyo Institute of Technology, Japan Fr-B1-5 (10:15-10:30) Rational Catalyst Engineering for CVD of Large, Single Crystalline Domains of Monolayer Hexagonal Boron Nitride on Iron films (MSS) Sabina Caneva1, Robert S. Weatherup1, Bernhard C. Bayer1,2, Barry Brennan3, Ken Mingard3, Steve J. Spencer3, Andrea Cabrero-Vilatela1, Carsten Baehtz4, Andrew J. Pollard3, and Stephan Hofmann1 1University of Cambridge, UK, 2 University of Vienna, Austria, 3 National Physical Laboratory, UK and 4Hemholtz Zentrum Dresden-Rossendorf, Germany

Coffee Break (30 min.)

Page 29: July 27 (Monday)ep2dsmss.sakura.ne.jp/program/mss_final_all_0724.pdf1, J. Yang1, K. Kanisawa2, and S. C. Erwin3 1Paul-Drude-Institut für Festkörperelektronik, Germany, 2NTT Basic

Plenary Session - IV Session Chair: Rolf Haug (Leibniz Universität Hannover) Fr-PL-1 (11:00-11:40) Electron Quantum Optics in Quantum Hall Edge Channels (plenary) Gwendal Feve Laboratoire Pierre Aigrain, Ecole Normale Supérieure, CNRS, Université Pierre et Marie Curie, France Fr-PL-2 (11:40-12:20) Electron Transport in the van der Waals Heterostructures (plenary) Philip Kim Harvard University, USA

(12:20-12:40) Closing Remarks