Introduction toNanoheat; Aspel group

20030910

TCAD

Collision-dominated quasi-ballistic

Double gate device/ quantum confinement

Conduction subband vs. position

Electron distribution function vs. position under high gate bias (top of the barrier)

Average electron velocity (high gate bias)

Key concepts to develop a ballistic theory

E-k relation (top of the barrier) under high gate bias: Vds=0/ small/ large

I-V characteristic for ballistic MOSFET (T>0, nondegenerate)

Ballistic limit characteristic vs. measured I-V

Backscattering at the top of the barrier

Average carrier velocity & inversion layer density (ballistic/ with scattering)

Effect of scattering within channel

Key concepts to develop a scattering theory

The scattering model

Transmission coefficient under low drain bias

Relating mean-free-path to a macroscopic quantity

Transmission coefficient under high drain bias

Electron injected into the channel undergoing its first scattering event

Scattering event in momentum space

Probability of it returning to the source

Classical ballistic/ quantum ballistic/ drift-diffusion

Essential physical picture of steady-state carrier transport in the nanoscale MOSFET

bottleneck

Monet

Continuum classical heat diffusion equation

Boltzmann transport equation (phonon)

Q’’’: electron-phonon interactions

Energy transfer process

Monte Carlo simulation Semi-classical approach

(1) Scattering rate (2) Free flight (F=ma) Fermi-Golden Rule

Heat generation profile (10nm DGSOI)

Cornell Aspel group

Primary research area- develop high speed interconnect system for chip-to-chip communication including receivers, transmitters, link architectures in CMOS, and stochastic encoding

Optical properties of sapphire substrate

300nm~ (6um)

Commercial 850nm GaAs/AlGaAs-quantum-well vertical-cavity surface emitting lasers (VCSELs) and 980nm InGaAs/AlGaAs VCSELs were used as front and back emitting structures, respectively.

“A high performance SiGe/Si MQW heterojunction phototransistor,” IEEE Trans. Electron Device (under revision), 2003

“A 7mW 1Gbps CMOS Optical Receiver For Through Wafer Communication”, accepted Proceedings of the International Symposium on Circuits and Systems, 2003