Guidelines for an IEDM PaperM. Takayanagi1, K. Rim2, and S. De Gendt3

1Mixed Signal IC Div, Toshiba Corp, Tokyo, Japan, email: mariko.takayanagi@toshiba.co.jp2Qualcomm Inc, San Diego, CA, USA, 3imec, Leuven, Belgium

Abstract—Basic guidelines for the preparation of a technical paper for an IEEE International Electron Device Meeting are presented. This electronic document is a “live” template. The various components of your paper [title, text, headings, etc.] are already defined, as illustrated by the portions given in this document. The maximum paper length is 4 pages consisting of up to 2 pages of text and up to 2 pages of figures. It should concisely state what was done, how it was done, principal results, and their significance.

I. INTRODUCTION

This template provides authors with most of the formatting specifications needed for preparing electronic versions of IEDM papers. All standard paper components have been specified for three reasons: (1) ease of use when formatting individual papers, (2) automatic compliance to electronic requirements that facilitate the concurrent or later production of electronic products, and (3) conformity of style throughout a conference’s proceedings. Margins, column widths, line spacing, and type styles are built-in; examples of the type styles are provided throughout this document and are identified in italic type, within parentheses, following the example. Some components, such as multi-leveled equations, graphics, and tables are not prescribed, although the various table text styles are provided. The formatter will need to create these components, incorporating the applicable criteria that follow.

II. EASE OF USE

A. Template (Heading 2)This template has been tailored for output on US letter-sized

paper.

B. Maintaining the Integrity of the SpecificationsThe template is used to format your paper and style the text.

All margins, column widths, line spaces, and text fonts are prescribed; please do not alter them. You may note peculiarities. For example, the heading margin in this template measures proportionately more than is customary. This measurement and others are deliberate, using specifications that anticipate your paper as one part of the entire proceedings, and not as an independent document. Please do not revise any of the current designations.

III. CONFERENCE PAPER PREPARATION

The maximum length of a paper for all invited, regular and late news is 4 pages, consisting of up to 2 pages of text and up to 2 pages of figures. Please use automatic hyphenation. Be sure your sentences are complete and that there is continuity within your paragraphs. Check the numbering of your graphics (figures

and tables) and make sure that all appropriate references are included.

Please take note of the following items when proofreading spelling and grammar:

A. Abbreviations and AcronymsDefine abbreviations and acronyms the first time they are

used in the text, even after they have been defined in the abstract. Abbreviations such as IEEE, SI, ac, dc, and rms do not have to be defined. Do not use abbreviations in the title or section headings unless they are unavoidable.

B. Units Metric units are preferred for use in IEEE publications

in light of their global readership and the inherent convenience of these units in many fields. In particular, the use of the International System of Units (SI Units) is advocated. An exception is when U.S. Customary units are used as identifiers in trade, such as 3.5-inch disk drive.

Avoid combining SI and U.S. Customary units, such as current in amperes and magnetic field in oersteds. This often leads to confusion because equations do not balance dimensionally. If you must use mixed units, clearly state the units for each quantity that you use in an equation.

Do not mix complete spellings and abbreviations of units: “Wb/m2” or “webers per square meter”, not “webers/m2”. Spell out units when they appear in text: “. . . a few henries”, not “. . . a few H”.

Use a zero before decimal points: “0.25”, not “.25”. Use “cm3”, not “cc”. (bullet list)

C. EquationsThe equations are an exception to the prescribed

specifications of this template. You will need to determine whether or not your equation should be typed using either the Times New Roman or the Symbol font (please no other font). To create multileveled equations, it may be necessary to treat the equation as a graphic and insert it into the text after your paper is styled. Use of the Microsoft Equation Editor or the MathType commercial add-on for MS Word for math objects in your paper is permissible (Insert | Equation or MathType Equation). "Float over text" should not be selected.

Number equations consecutively. Equation numbers, within parentheses, are to position flush right, as in (1), using a right tab stop. To make your equations more compact, you may use

the solidus ( / ), the exp function, or appropriate exponents. Italicize Roman symbols for quantities and variables, but not Greek symbols. Use a long dash, as shown in (1), rather than a hyphen for a minus sign. Punctuate equations with commas or periods when they are part of a sentence, as in

Note that the equation above is centered using a center tab stop. Be sure that the symbols in your equation have been defined before or immediately following the equation. Use “(1)”, not “Eq. (1)” or “equation (1)”, except at the beginning of a sentence: “Equation (1) is . . .”

IV. USING THE TEMPLATE

This document is highly recommended to use as a template for preparing your Conference paper. You may type over sections of the document, cut and paste into it, and/or use markup styles.

Duplicate the template file by using the Save As command, and use the naming convention prescribed by your conference for the name of your paper.

D. Authors and AffiliationsThe template is designed so that author affiliations are not

repeated each time for multiple authors of the same affiliation. Please keep your affiliations as succinct as possible (for example, do not differentiate among departments of the same organization. Acronyms also acceptable).

E. Identify the HeadingsHeadings are organizational devices that guide the reader

through your paper. There are two types: component headings and text headings.

Component headings identify the different components of your paper and are not topically subordinate to each other. Examples include ACKNOWLEDGMENTS and REFERENCES. Run-in headings, such as “Abstract”, will require you to apply a style (in this case, italic) in addition to the style provided by the drop down menu to differentiate the heading from the text.

Text headings organize the topics on a relational, hierarchical basis. For example, the paper title is the primary text heading because all subsequent material relates and elaborates on this one topic. If there are two or more sub-topics, the next level heading (uppercase Roman numerals) should be used and, conversely, if there are not at least two sub-topics, then no subheadings should be introduced.

F. Figures and Tables1) Positioning Figures and Tables: Large figures and tables

may span across both columns. Captions should be below the figure or table. You can have up to 2 pages of figures and tables following your 2 pages of text. Use the abbreviation “Fig. 1”, even at the beginning of a sentence.

Figure Labels: Use 8 point Times New Roman for Figure labels. “Magnetization, M”, not just “M”. If including units in the label, present them within parentheses. Do not label axes only with units. In the example, write “Magnetization (A/m)” Do not label axes with a ratio of quantities and units. For example, write “Temperature (K)”, not “Temperature/K”.

Figures and tables should be numbered consecutively. Use Arabic numerals for figures and Roman numerals for tables.

Figure 1. Example of a figure caption. (figure caption)

ACKNOWLEDGMENT

The following is an example of an acknowledgment.

The authors gratefully acknowledge the contributions of T. Edison, G. Westinghouse, N. Tesla, A. Volta and A. Ampere to the electric power industry.

REFERENCES

[1] J. F. Fuller, E. F. Fuchs, and K. J. Roesler, "Influence of harmonics on power distribution system protection," IEEE Trans. Power Delivery, vol. 3, pp. 549-557, Apr. 1988.

[2] R. J. Vidmar. (1992, Aug.). On the use of atmospheric plasmas as electromagnetic reflectors. IEEE Trans. Plasma Sci. [Online]. 21(3), pp.

[3] E. Clarke, Circuit Analysis of AC Power Systems, vol. I. New York: Wiley, 1950, p. 81.

[4] E. E. Reber, R. L. Mitchell, and C. J. Carter, "Oxygen absorption in the Earth's atmosphere," Aerospace Corp., Los Angeles, CA, Tech. Rep. TR-0200 (4230-46)-3, Nov. 1968.

[5] Y. Yorozu, M. Hirano, K. Oka, and Y. Tagawa, “Electron spectroscopy studies on magneto-optical media and plastic substrate interface,” IEEE Transl. J. Magn. Japan, vol. 2, pp. 740–741, August 1987 [Digests 9th Annual Conf. Magnetics Japan, p. 301, 1982].

[6] L. Alqueres and J. C. Praca, "The Brazilian power system and the challenge of the Amazon transmission," in Proc. 1991 IEEE Power Engineering Society Transmission and Distribution Conf., pp. 315-320

We suggest that you use a text box to insert a graphic (which is ideally a 300 dpi TIFF or EPS file, with all fonts embedded) because, in an MSW document, this method is somewhat more stable than directly inserting a picture.

To have non-visible rules on your frame, use the MSWord “Format” pull-down menu, select Text Box > Colors and Lines to choose No Fill and No Line.

100

1000

0.1 1E

lect

ron

Mob

ility

[cm2 /V

sec]

Eeff [MV/cm]

Nsub=3x1016cm-3

473K

423K373K

300K

223K

HfSiON

SiO2

Fig. 6. Dependence of eff on Eeff of HfSiON- nMOSFET compared to SiO2-nMOSFET at 223

K to 473 K.

0

5

10

15

20

25

30

35

0 10 20 30 40 50 60

Die

lect

ric C

onst

ant (

Sta

tic)

[N] (at.%)

Hf/(Hf+Si):

15%

25%

35%

60%

100%80%

Without Hf-NWith Hf-N

As-depo.

Fig. 1. Dielectric constant of various HfSiON with different Hf, N content.

Fig. 2. Dependence of Vfb(p+Si)- Vfb (n+Si) on the Hf-ratio in HfSiON films. Results

for HfO2 and HfSiO are also shown.

Fig. 3. m,eff of p+Si and n+Si gate electrodes on HfSiON films as a function of the Hf-ratio.

depth [nm]1 2 3 4 5 6 7

Hf,S

i-con

c.

[at.%

]

0

10

20

30

40

Hf-gradientHfSiON

(a)Si-

sub.Poly-Si

depth [nm]1 2 3 4 5 6 7

Hf,S

i-con

c.

[at.%

]

0

10

20

30

40

Hf-gradientHfSiON

(a)Si-

sub.Poly-Si

Hf-gradientHfSiON

(a)Si-

sub.Poly-Si

Fig. 4. (a)Cross-sectional TEM and (b) depth profiles of Hf and Si (high-

resolution RBS) in the Hf-composition gradient HfSiON film.

1000900800700600

500

400

300

200

10 11 10 12 10 13

Ns [cm-2]

[c

m2 /V

sec]

Nsub=3x1016cm-3

473K

423K

373K

300K

223K

Fig. 7 Additional mobility component, , extracted using Matthiessen’s rule

plotted as a function of Ns.

1000

200

300

400

500

600

700800900

200 300 400 500

[c

m2 /V

sec]

Temperature [K]

Nsub=3x1016cm-3

Ns=2x1011cm-2

Ns=5x1012cm-2

Fig. 8. Temperature dependence of at low Ns (2x1011 cm-2) and high Ns (5x1012 cm-2).

Fig. 9. Vth vs. Lg compared between Hf30%

and Hf50%. EOT=1.8 nm for both Hf30% and Hf50%.

Vg [V]-2.0 -1.5 -1.0 -0.5 0.0 0.5

Cap

acita

nce

[pF

]

0

5

10

15

20

25n+Si

p+Si

Depth [nm]200 300 400

B c

onc.

[/c

m3 ]

10151016101710181019102010211022

Hf,

Si in

t.[a.

u.]

B

Hf

Si

Vfb=0.64V

EOT=2.9nm

No B pe-netration

p+Si Si-subHf-gradient HfSiON

Vg [V]-2.0 -1.5 -1.0 -0.5 0.0 0.5

Cap

acita

nce

[pF

]

0

5

10

15

20

25n+Si

p+Si

Depth [nm]200 300 400

B c

onc.

[/c

m3 ]

10151016101710181019102010211022

Hf,

Si in

t.[a.

u.]

B

Hf

Si

Vfb=0.64V

EOT=2.9nm

No B pe-netration

p+Si Si-subHf-gradient HfSiON

Fig. 5. C-V for n+ or p+Si/Hf-gradient HfSiON/ p-Si MOS capacitors. Inset shows no B penetration occurs at the p+ device to the Si-

sub.(backside-SIMS).

1/Vd ( V )

0.4 0.5 0.6 0.7 0.8 0.9

Life

time

(Io

n=10

%)

( s

)

10-1

100

101

102

103

104

105

106

107

108

109

Vd ( V )

1.21.41.61.82.02.2

Hf(30%)Hf(50%)

Lg=65 nmn-FETVd=Vg stress

10 years

EOT ( nm )

1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8

Life

time

@1.

2V (

s )

1010

1011

1012

1013

1014

Hf(30%)Hf(50%)

Predicted by V-model

(Weff x Leff ) -1/20 1 2 3 4 5 6 7

Vth

( m

V )

0

5

10

15

20

25

Hf(30%)Hf(50%)SiO2

200 nMOSFET

Frequency ( Hz )101 102 103 104 105

1/f -

noi

se

( V2

m2 /H

z )

10-5

10-4

10-3

10-2

10-1

100

101

102

103

104

Hf50%

Hf30%

SiO2

Gate voltage ( V )-1.5 -1.0 -0.5 0.0 0.5 1.0 1.5

Dra

in c

urre

nt (

A/

m )

10-14

10-13

10-12

10-11

10-10

10-9

10-8

10-7

10-6

10-5

10-4

10-3

Vd=1.2 V

Vd=0.05 V

Drain voltage ( V )-1.5 -1.0 -0.5 0.0 0.5 1.0 1.5

Dra

in c

urre

nt (

A/

m )

0

200

400

600

800Vg=0.7-1.5 V, 0.1 V step

Fig. 12 Roll-off curve of HfSiON- CMOSFETs compared among Hf30% with

CVD-SiO2, Hf50-% with CVD-SiO2 and Hf50% with CVD-SiN offset spacers.

SiO2

SiO2 interfacial layer

Poly-Si

HfSiON(30%)

Si-sub.5 nm

SiO2

SiO2 interfacial layer

Poly-Si

HfSiON(30%)

Si-sub.5 nm

SiO2

HfSiON(50%)

Poly-Si

SiO2 interfacial layer

SiO2

HfSiON(50%)

Poly-Si

SiO2 interfacial layer

SiN

HfSiON(50%)

Poly-Si

SiO2 interfacial layer

SiN

HfSiON(50%)

Poly-Si

SiO2 interfacial layer

SiO2 layer

Fig. 13. Cross sectional TEM images at the gate edge of HfSiON-MOSFETs with (a) Hf30% with CVD-SiO2, (b)Hf50-% with CVD-SiO2 and (c)Hf50% with CVD-SiN offset spacers.

Fig. 14. Sub-threshold characteristics of 65 nm gate length CMOSFET with optimized process

Fig. 15. Drain current for 65 nm gate length CMOSFET.

Table 1. Summary of performance for 65 nm gate length CMOSFET with HfSiON.

Ig [pA/µm]

Ioff(n/p) [pA/µm]

Ion(n/p) [µA/µm]

EOT [nm]

Lg [nm]

Vdd [V]

31

1018 / 16

440400 / 160

2.12.0

6565

1.21.2

ITRShp90 nm

This work

Ig [pA/µm]

Ioff(n/p) [pA/µm]

Ion(n/p) [µA/µm]

EOT [nm]

Lg [nm]

Vdd [V]

31

1018 / 16

440400 / 160

2.12.0

6565

1.21.2

ITRShp90 nm

This work