✽1 Other sizes are available upon request.The maximum size of ingot is 4 inches in diameter. Size is measured by profile projector.

✽2 Thickness is measured by opto-micrometer. Other thicknesses are available upon request.

✽3 Orientation is measured by X-ray diffractometer.

✽1 Etch pits on (111) A are revealed by Nakagawa etchant (H2O:H2O2:HF=2:2:1).✽2 FWHM is measured by X-ray rocking curve.✽3 Size of Te precipitate (PPT) is measured by IR microscope.

CMYK

Item Size✽1 Thickness✽2Surface

Orientation✽3

UnitSurface Finish

Both SidesPolished

10×10〜50×5040×60

800±50（111）±0.25（211）±0.25（100）±0.25

mm2 µm degree

CdTe and CdZnTe Substrates (Density : 5.86g/cm3)

Dimension

Item Cd1-x Znx Te EPD✽1 FWHM✽2

UnitDopant

Zn 0.01〜0.05±0.01 ≦1E5

molar ratio x cm–2. second

Te precipitate size✽3

≦10, ≦2

None ────── ≦3E5 ≦50 ≦10, ≦2

µm

Crystalline and electrical properties

New equipments for CdZnTe evaluations

(1)Automatic Zn concentration Mapping System

(2)Light scattering System ■Light scattering ■IR micro

PPT≦10µm

PPT-free

✽ Export of CdTe and CdZnTe single crystal from Japan is subject to the approval of the Japanese government due to the export regulation.

■Zn mapping

693.9

684.4

674.7

664.7

654.5

643.4

634.4

624.9

615.0

605.0

594.9

584.3

572.7

563.8

554.8

545.1

535.1

525.1

515.1

504.9

493.8

483.0

474.2

464.9

455.1

445.3

435.3

425.2

415.0

404.4

393.0

384.2

374.9

365.1

355.3

345.3

335.2

325.1

314.5

302.9

293.9

284.8

275.0

265.2

255.3

245.1

235.0

224.4

212.5

203.5

194.4

184.8

175.0

165.1

155.0

144.7

134.0

123.0

113.7

104.3

94.6

84.6

74.5

64.1

52.9

43.4

33.6

23.7

13.5

30mm

20m

m30

mm

30mm

100µm

100µm

10mm

BZ904_2

≦50

05/7/15 出力 初校 -69-M7B1-175L-LINEAR-COMP

InP Single Crystal Substrates

InP HB Polycrystal

CdTe and CdZnTe Single Crystal Substrates

InP and CdTeSingle Crystal Substrates

2013.03

Sales offices

JAPAN JX Nippon Mining & Metals Corporation Compound Semiconductor Department 6-3, Otemachi 2-chome, Chiyoda-ku, Tokyo 100-8164, Japan TEL:+81-3-5299-7286 FAX:+81-3-5299-7349

NORTH AMERICA JX Nippon Mining & Metals USA, Inc. 125 North Price Road, Chandler Arizona 85224 U.S.A. TEL:+1-480-732-9857 FAX:+1-480-899-0779 sales@nmm-jx-group.com

EUROPE JX Nippon Mining & Metals Europe GmbH Kaiserstrasse 7, D-60311 Frankfurt am Main, Germany TEL:+49-(0)-69-2193653-0 FAX:+49-(0)-69-2193653-20 saleseurope@nmm-jx-group.com

TAIWAN Nikko Metals Taiwan Co., Ltd / Bade Works No. 62, You-Lian St., Bade City, Tao-Yuan, Taiwan 33449 R.O.C. TEL:+886-3-368-2303 FAX:+886-3-365-2555

SINGAPORE JX Nippon Mining & Metals Singapore Pte. Ltd. 16 Raffles Quay, #33-04 Hong Leong Building Singapore 048581 TEL:+65-6225-5413 FAX:+65-6227-0373

Works Isohara Works 187-4, Usuba, Hanakawa-cho, Kitaibaraki-shi, Ibaraki-ken 319-1535, Japan TEL:+81-293-43-5111 FAX:+81-293-43-5140

www.nmm.jx-group.co.jp

CMYK

■2-inch-diameterCrystalline and Electrical Properties✽1

Type Dopant EPD（cm–2）（See below A.） DF（Defect Free）area（cm2, See below B.） c/c（cm–3） Mobility（cm2/Vs） Resistivity（Ω・cm）

n Sn≦5×104

≦1×104

≦5×103

──────

──────

≦5×104

≦1×104

≦5×104

────── （0.5〜6）×1018 ────── ──────

n S≧ 10（59.4%）≧ 15（87%）.4

（2〜10）×1018 ────── ──────

p Zn≧ 10（59.4%）≧ 15（87%）.4

（3〜6）×1018 ────── ──────

S.I. Fe ────── ────── ────── ≧ 1×106

n none ────── ≦1×1016 ≧ 4×103 ──────

InP Single Crystal Substrates (Density : 4.79g/cm3)

✽1 Other specifications are available upon request.

1. Dislocation etch pit densities are

measured at 13 points.

2. Area weighted average of the

dislocation densities is calculated.

A.13 Points Average B.DF Area Measurement (In Case of Area Guarantee)

1. Dislocation etch pit densities of 69 points shown as right

are counted.

2. DF is defined as EPD less than 500cm–2

3. Maximum DF area measured by this method is 17.25cm2

[011̄]

[001̄]

[01̄1̄]

5mm

5mm

=0.25cm2

Item

UnitSurface Finish

One SideMirror-Polished

Both SidesMirror-Polished

50.0±0.5

50.0±0.5

350±20

350±20

15±2

15±2

8±2

8±2

≦10

≦10

≦15

≦15

Diameter

mm µm mm mm µm µm

Thickness✽1OrientationFlat Length

IndexFlat Length

TV✽2 SORI✽3

✽1 Thickness is measured at the center point of the wafer by opto micrometer.✽2 Thickness Variation (TV) is the maximum-minimum of five points within the wafer measured by opto micrometer.✽3 SORI is measured by laser interferometer flatness tester.

InP Single Crystal Substrates Common Specifications

InP HB Polycrystal

1. Orientation

Surface orientation (100)±0.2º or (100)±0.05º

Surface off orientation is available upon request.

Orientation of flat OF : (01-1-)±1º or (01

-1-)±0.1º

IF : (01-1-)±2º

Cleaved OF is available upon request.

2. Laser marking based on SEMI standard is available.

3. Individual package,as well as package in N2 gas are

available.

4. Etch-and-pack in N2 gas is available.

5. Rectangular wafers are available.

Above specification is of JX' standard.

If other specifications are required, please inquire us.

Orientation

Rectangular Wafer

Type : European/Japanese

■Standard Specifications

[01̄1̄]

[001̄]

[011̄] [01̄1]

[01̄0]

[011]

[010] [001]

(11̄1̄)A

(111)A

(111̄)B

(100)

(111)

(100)

(11̄1)B

Face of ElementⅢ(In)

OF

OF

IF

IF

Face of ElementⅤ(P)

Polish Face

(101̄) (11̄0)

(110) (101)

(010) (001)(011)

(110) (101)

Length of V Groove Surface

Length of Dovetail Groove Surface

Dovetail Etch

IF(Secondary) OF(Primary)

Front Side

V Groove

(01̄1) (01̄1̄)

(100)

1. Electrical Properties

Carrier Concentration : ≦3×1015cm–3

(Measured at 300K)

2. Dimensions

Size : D-shape, approx.50×60mm2

Thickness : 1.0±0.1mm Weight : approx.10g

3. Surface Finish : As cut or as etched after cutting.

4. Packaging

Individual package by glassine

~– 60mm

~ –50

mm

InP and CdTe Single Crystal Substrates

InP AND CdTe SINGLE CRYSTAL SUBSTRATES

4/11　出力初校　*71-2

■3-inch and 4-inch diameterCrystalline, Electrical Properties, Dimension and Flatness

Type Dopant EPD（cm–2） c/c（cm–3） Mobility（cm2/Vs） Resistivity（Ω・cm）n S ≦5×103 （2〜10）×1018

S.I. Fe ≦IE5, ≦5E4 ────── ──────────── ──────

≧ IE6

Item

UnitSurface Finish

One Side Mirror-Polished

Both Sides Mirror-Polished

76.2±0.3

76.2±0.3

625±20

600±20

22±1

22±1

11±1

11±1

≦8

≦5

≦10

≦10

Diameter

mm µm mm mm µm µm

Thickness✽1OrientationFlat Length

IndexFlat Length

TTV✽2 Warp✽2

✽1 Other thicknesses are available upon request.✽2 TTV and Warp are measured by SuperSortTM

/ Ultra SortTM, SuperSortTM / Ultra SortTM is the registrated mark of Tropel Corp.

Both Sides Mirror-Polished 100.0±0.3 625±20 32.5±1 18±1 ≦5, ≦8 ≦10, ≦15

CMYK

■2-inch-diameterCrystalline and Electrical Properties✽1

Type Dopant EPD（cm–2）（See below A.） DF（Defect Free）area（cm2, See below B.） c/c（cm–3） Mobility（cm2/Vs） Resistivity（Ω・cm）

n Sn≦5×104

≦1×104

≦5×103

──────

──────

≦5×104

≦1×104

≦5×104

────── （0.5〜6）×1018 ────── ──────

n S≧ 10（59.4%）≧ 15（87%）.4

（2〜10）×1018 ────── ──────

p Zn≧ 10（59.4%）≧ 15（87%）.4

（3〜6）×1018 ────── ──────

S.I. Fe ────── ────── ────── ≧ 1×106

n none ────── ≦1×1016 ≧ 4×103 ──────

InP Single Crystal Substrates (Density : 4.79g/cm3)

✽1 Other specifications are available upon request.

1. Dislocation etch pit densities are

measured at 13 points.

2. Area weighted average of the

dislocation densities is calculated.

A.13 Points Average B.DF Area Measurement (In Case of Area Guarantee)

1. Dislocation etch pit densities of 69 points shown as right

are counted.

2. DF is defined as EPD less than 500cm–2

3. Maximum DF area measured by this method is 17.25cm2

[011̄]

[001̄]

[01̄1̄]

5mm

5mm

=0.25cm2

Item

UnitSurface Finish

One SideMirror-Polished

Both SidesMirror-Polished

50.0±0.5

50.0±0.5

350±20

350±20

15±2

15±2

8±2

8±2

≦10

≦10

≦15

≦15

Diameter

mm µm mm mm µm µm

Thickness✽1OrientationFlat Length

IndexFlat Length

TV✽2 SORI✽3

✽1 Thickness is measured at the center point of the wafer by opto micrometer.✽2 Thickness Variation (TV) is the maximum-minimum of five points within the wafer measured by opto micrometer.✽3 SORI is measured by laser interferometer flatness tester.

InP Single Crystal Substrates Common Specifications

InP HB Polycrystal

1. Orientation

Surface orientation (100)±0.2º or (100)±0.05º

Surface off orientation is available upon request.

Orientation of flat OF : (01-1-)±1º or (01

-1-)±0.1º

IF : (01-1-)±2º

Cleaved OF is available upon request.

2. Laser marking based on SEMI standard is available.

3. Individual package,as well as package in N2 gas are

available.

4. Etch-and-pack in N2 gas is available.

5. Rectangular wafers are available.

Above specification is of JX' standard.

If other specifications are required, please inquire us.

Orientation

Rectangular Wafer

Type : European/Japanese

■Standard Specifications

[01̄1̄]

[001̄]

[011̄] [01̄1]

[01̄0]

[011]

[010] [001]

(11̄1̄)A

(111)A

(111̄)B

(100)

(111)

(100)

(11̄1)B

Face of ElementⅢ(In)

OF

OF

IF

IF

Face of ElementⅤ(P)

Polish Face

(101̄) (11̄0)

(110) (101)

(010) (001)(011)

(110) (101)

Length of V Groove Surface

Length of Dovetail Groove Surface

Dovetail Etch

IF(Secondary) OF(Primary)

Front Side

V Groove

(01̄1) (01̄1̄)

(100)

1. Electrical Properties

Carrier Concentration : ≦3×1015cm–3

(Measured at 300K)

2. Dimensions

Size : D-shape, approx.50×60mm2

Thickness : 1.0±0.1mm Weight : approx.10g

3. Surface Finish : As cut or as etched after cutting.

4. Packaging

Individual package by glassine

~– 60mm

~ –50

mm

InP and CdTe Single Crystal Substrates

InP AND CdTe SINGLE CRYSTAL SUBSTRATES

4/11　出力初校　*71-2

■3-inch and 4-inch diameterCrystalline, Electrical Properties, Dimension and Flatness

Type Dopant EPD（cm–2） c/c（cm–3） Mobility（cm2/Vs） Resistivity（Ω・cm）n S ≦5×103 （2〜10）×1018

S.I. Fe ≦IE5, ≦5E4 ────── ──────────── ──────

≧ IE6

Item

UnitSurface Finish

One Side Mirror-Polished

Both Sides Mirror-Polished

76.2±0.3

76.2±0.3

625±20

600±20

22±1

22±1

11±1

11±1

≦8

≦5

≦10

≦10

Diameter

mm µm mm mm µm µm

Thickness✽1OrientationFlat Length

IndexFlat Length

TTV✽2 Warp✽2

✽1 Other thicknesses are available upon request.✽2 TTV and Warp are measured by SuperSortTM

/ Ultra SortTM, SuperSortTM / Ultra SortTM is the registrated mark of Tropel Corp.

Both Sides Mirror-Polished 100.0±0.3 625±20 32.5±1 18±1 ≦5, ≦8 ≦10, ≦15

CMYK

■2-inch-diameterCrystalline and Electrical Properties✽1

Type Dopant EPD（cm–2）（See below A.） DF（Defect Free）area（cm2, See below B.） c/c（cm–3） Mobility（cm2/Vs） Resistivity（Ω・cm）

n Sn≦5×104

≦1×104

≦5×103

──────

──────

≦5×104

≦1×104

≦5×104

────── （0.5〜6）×1018 ────── ──────

n S≧ 10（59.4%）≧ 15（87%）.4

（2〜10）×1018 ────── ──────

p Zn≧ 10（59.4%）≧ 15（87%）.4

（3〜6）×1018 ────── ──────

S.I. Fe ────── ────── ────── ≧ 1×106

n none ────── ≦1×1016 ≧ 4×103 ──────

InP Single Crystal Substrates (Density : 4.79g/cm3)

✽1 Other specifications are available upon request.

1. Dislocation etch pit densities are

measured at 13 points.

2. Area weighted average of the

dislocation densities is calculated.

A.13 Points Average B.DF Area Measurement (In Case of Area Guarantee)

1. Dislocation etch pit densities of 69 points shown as right

are counted.

2. DF is defined as EPD less than 500cm–2

3. Maximum DF area measured by this method is 17.25cm2

[011̄]

[001̄]

[01̄1̄]

5mm

5mm

=0.25cm2

Item

UnitSurface Finish

One SideMirror-Polished

Both SidesMirror-Polished

50.0±0.5

50.0±0.5

350±20

350±20

15±2

15±2

8±2

8±2

≦10

≦10

≦15

≦15

Diameter

mm µm mm mm µm µm

Thickness✽1OrientationFlat Length

IndexFlat Length

TV✽2 SORI✽3

✽1 Thickness is measured at the center point of the wafer by opto micrometer.✽2 Thickness Variation (TV) is the maximum-minimum of five points within the wafer measured by opto micrometer.✽3 SORI is measured by laser interferometer flatness tester.

InP Single Crystal Substrates Common Specifications

InP HB Polycrystal

1. Orientation

Surface orientation (100)±0.2º or (100)±0.05º

Surface off orientation is available upon request.

Orientation of flat OF : (01-1-)±1º or (01

-1-)±0.1º

IF : (01-1-)±2º

Cleaved OF is available upon request.

2. Laser marking based on SEMI standard is available.

3. Individual package,as well as package in N2 gas are

available.

4. Etch-and-pack in N2 gas is available.

5. Rectangular wafers are available.

Above specification is of JX' standard.

If other specifications are required, please inquire us.

Orientation

Rectangular Wafer

Type : European/Japanese

■Standard Specifications

[01̄1̄]

[001̄]

[011̄] [01̄1]

[01̄0]

[011]

[010] [001]

(11̄1̄)A

(111)A

(111̄)B

(100)

(111)

(100)

(11̄1)B

Face of ElementⅢ(In)

OF

OF

IF

IF

Face of ElementⅤ(P)

Polish Face

(101̄) (11̄0)

(110) (101)

(010) (001)(011)

(110) (101)

Length of V Groove Surface

Length of Dovetail Groove Surface

Dovetail Etch

IF(Secondary) OF(Primary)

Front Side

V Groove

(01̄1) (01̄1̄)

(100)

1. Electrical Properties

Carrier Concentration : ≦3×1015cm–3

(Measured at 300K)

2. Dimensions

Size : D-shape, approx.50×60mm2

Thickness : 1.0±0.1mm Weight : approx.10g

3. Surface Finish : As cut or as etched after cutting.

4. Packaging

Individual package by glassine

~– 60mm

~ –50

mm

InP and CdTe Single Crystal SubstratesInP AND CdTe SINGLE CRYSTAL SUBSTRATES

4/11　出力初校　*71-2

■3-inch and 4-inch diameterCrystalline, Electrical Properties, Dimension and Flatness

Type Dopant EPD（cm–2） c/c（cm–3） Mobility（cm2/Vs） Resistivity（Ω・cm）n S ≦5×103 （2〜10）×1018

S.I. Fe ≦IE5, ≦5E4 ────── ──────────── ──────

≧ IE6

Item

UnitSurface Finish

One Side Mirror-Polished

Both Sides Mirror-Polished

76.2±0.3

76.2±0.3

625±20

600±20

22±1

22±1

11±1

11±1

≦8

≦5

≦10

≦10

Diameter

mm µm mm mm µm µm

Thickness✽1OrientationFlat Length

IndexFlat Length

TTV✽2 Warp✽2

✽1 Other thicknesses are available upon request.✽2 TTV and Warp are measured by SuperSortTM

/ Ultra SortTM, SuperSortTM / Ultra SortTM is the registrated mark of Tropel Corp.

Both Sides Mirror-Polished 100.0±0.3 625±20 32.5±1 18±1 ≦5, ≦8 ≦10, ≦15

✽1 Other sizes are available upon request.The maximum size of ingot is 4 inches in diameter. Size is measured by profile projector.

✽2 Thickness is measured by opto-micrometer. Other thicknesses are available upon request.

✽3 Orientation is measured by X-ray diffractometer.

✽1 Etch pits on (111) A are revealed by Nakagawa etchant (H2O:H2O2:HF=2:2:1).✽2 FWHM is measured by X-ray rocking curve.✽3 Size of Te precipitate (PPT) is measured by IR microscope.

CMYK

Item Size✽1 Thickness✽2Surface

Orientation✽3

UnitSurface Finish

Both SidesPolished

10×10〜50×5040×60

800±50（111）±0.25（211）±0.25（100）±0.25

mm2 µm degree

CdTe and CdZnTe Substrates (Density : 5.86g/cm3)

Dimension

Item Cd1-x Znx Te EPD✽1 FWHM✽2

UnitDopant

Zn 0.01〜0.05±0.01 ≦1E5

molar ratio x cm–2. second

Te precipitate size✽3

≦10, ≦2

None ────── ≦3E5 ≦50 ≦10, ≦2

µm

Crystalline and electrical properties

New equipments for CdZnTe evaluations

(1)Automatic Zn concentration Mapping System

(2)Light scattering System ■Light scattering ■IR micro

PPT≦10µm

PPT-free

✽ Export of CdTe and CdZnTe single crystal from Japan is subject to the approval of the Japanese government due to the export regulation.

■Zn mapping

693.9

684.4

674.7

664.7

654.5

643.4

634.4

624.9

615.0

605.0

594.9

584.3

572.7

563.8

554.8

545.1

535.1

525.1

515.1

504.9

493.8

483.0

474.2

464.9

455.1

445.3

435.3

425.2

415.0

404.4

393.0

384.2

374.9

365.1

355.3

345.3

335.2

325.1

314.5

302.9

293.9

284.8

275.0

265.2

255.3

245.1

235.0

224.4

212.5

203.5

194.4

184.8

175.0

165.1

155.0

144.7

134.0

123.0

113.7

104.3

94.6

84.6

74.5

64.1

52.9

43.4

33.6

23.7

13.5

30mm

20m

m30

mm

30mm

100µm

100µm

10mm

BZ904_2

≦50

05/7/15 出力 初校 -69-M7B1-175L-LINEAR-COMP

InP Single Crystal Substrates

InP HB Polycrystal

CdTe and CdZnTe Single Crystal Substrates

InP and CdTeSingle Crystal Substrates

2013.03

Sales offices

JAPAN JX Nippon Mining & Metals Corporation Compound Semiconductor Department 6-3, Otemachi 2-chome, Chiyoda-ku, Tokyo 100-8164, Japan TEL:+81-3-5299-7286 FAX:+81-3-5299-7349

NORTH AMERICA JX Nippon Mining & Metals USA, Inc. 125 North Price Road, Chandler Arizona 85224 U.S.A. TEL:+1-480-732-9857 FAX:+1-480-899-0779 sales@nmm-jx-group.com

EUROPE JX Nippon Mining & Metals Europe GmbH Kaiserstrasse 7, D-60311 Frankfurt am Main, Germany TEL:+49-(0)-69-2193653-0 FAX:+49-(0)-69-2193653-20 saleseurope@nmm-jx-group.com

TAIWAN Nikko Metals Taiwan Co., Ltd / Bade Works No. 62, You-Lian St., Bade City, Tao-Yuan, Taiwan 33449 R.O.C. TEL:+886-3-368-2303 FAX:+886-3-365-2555

SINGAPORE JX Nippon Mining & Metals Singapore Pte. Ltd. 16 Raffles Quay, #33-04 Hong Leong Building Singapore 048581 TEL:+65-6225-5413 FAX:+65-6227-0373

Works Isohara Works 187-4, Usuba, Hanakawa-cho, Kitaibaraki-shi, Ibaraki-ken 319-1535, Japan TEL:+81-293-43-5111 FAX:+81-293-43-5140

www.nmm.jx-group.co.jp