hunter dev app high temp

8/11/2019 Hunter Dev App High Temp

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DEVELOPMENT AND APPLICATION OF HIGH

TEMPERATURE SENSORS AND ELECTONICS

Gary W. Hunter, Ph.D.

NASA Glenn Research Center

Cleveland, OH 44135

[email protected]


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CONTRIBUTORS

NASA GLENN RESEARCH CENTER

Jih-Fen Lei, G. Fralick, L. Martin, G. Behiem, R. Okojie,Phil G. Neudeck

L.Y. Chen, Ohio Aerospace Institute

D. Lukco, Dynacs Corp.

D. J. Spry, D. Androjna, and C. Blaha, Akima Corp/NASA GRC

C. C. Liu, B. Ward, and Q. H. Wu, Case Western Reserve University

P. Dutta, M. Frank, M. Frank, J. Trimbol, M. Fulkerson , Ohio State

University

D. Makel, Makel Engineering Inc.


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OUTLINE

INTRODUCTION

PHYSICAL SENSOR TECHNOLOGYTHIN FILM SENSORS

LEAD WIRES

SiC HIGH TEMPERATURE ELECTRONICS/SENSORSPRESSURE SENSOR

CHEMICAL SENSOR TECHNOLOGY

TIN-OXIDE BASED GAS SENSORSHIGH TEMPERATURE ELECTRONIC NOSE

SUMMARY/COMMON THEMES


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SCOPE OF WORK

CHEMICAL SENSORSSILICON CARBIDE HIGH

TEMPERATURE ELECTRONICSSTRAIN GAGES

MICROELECTROMECHANICAL

SYSTEMS (MEMS)

TEMPERATURE SENSORSHEAT FLUX GAGES

SENSORS & ELECTRONICS TECHNOLOGY BRANCH


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THIN FILM SENSOR TECHNOLOGY

VERY THIN, MINIMALLY INTRUSIVE SENSORS ABLE TO PROVIDE HIGH TEMPERATURE

DATA WITHOUT DISTURBING AIR FLOW

CAN BE FABRICATED DIRECTLY ON CERAMIC AND METAL ENGINE PARTS WITHOUT THE

NEED TO CUT INTO THE PART.

CAN BE APPLIED TO METAL BASED MATERIALS, CERAMIC MATERIALS, AND CERAMIC

MATRIX COMPOSITES.

MULTIFUNTIONAL, INFORMATION RICH SENSORS CURRENTLY UNDER DEVELOPMENT

PdCr THIN FILM GAUGE

APPLIED ON ALLIED-SIGNAL

ENGINES CERAMIC TURBINE

BLADE

1995 R&D 100 Award

THIN FILM

THERMOCOUPLES ON

SPACE SHUTTLE MAIN

ENGINE TURBINE BLADES

HEAT FLUX GAGE ONSILICON NITRIDE PLUG

THIN FILM THERMOCOUPLESON CERMIC MATRIX

COMPOSITE HOOP


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HIGH TEMPERATURE STRAIN SENSOR TECHNOLOGY

PdCr thin film gauge applied on Allied-

Signal Engines ceramic turbine blade

1995 R&D 100 Award1991 R&D 100 Award

PdCr wire strain gauge applied on

Ford Motor Co. exhaust manifold

High temperature strain sensors developed based on a newly developed alloy, PdCr.

Wire gauge operates to 800 C and thin film gauge operates to 1100 C, compared to 400C of the commercially available technologies. Technology transferred to Pratt & Whitney, GEAE, AlliedSignal Engine, Allison,

Ford Motor et al. for advanced materials and engine testing.

Wire strain gauge technology commercialized.

New ceramic gauge materials being explored for higher temperature applications.


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LEAD WIRE CONNECTIONS

SIGNIFICANT PROBLEM

STANDARD APPROACH

CONVOLUTED APPROACH


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Long-lived Convoluted Thermocouples

For Ceramics Temperature Measurements1998 R&D 100 Award

Unique convoluted design and installation technique successfully

provided the needed thermal stress relief

Good adhesion on ceramic based materials such as ceramicmatrix composite

Operating in a hostile environment (1300 C 4560 torrs) for

a long period of time (>20 hrs)

A better, faster, cheaper enabling technology

Commercialized by HiTec Products Inc.

Sensor configuration Burner rig evaluation

Applied to a C/SiC cylinder

Applied to a GEAE IHPTET

SiC/SiC combustor liner


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SiC-BASED MICROSYSTEM BENEFITSOperation in High Temperatures, High Power, High Radiation, andHarsh Environments

Reduced Size, Weight, and Power Consumption- Electronics in HarshEnvironments

Use Si Based Processing Techniques

INTEGRATED SYSTEMS FOR USE IN HARSH ENVIRONMENTS

ELECTRONICSACTUATORS SENSORS

SiC-based electronics and sensors can operate in hostile environments (600 C = 1112 FGLOWING RED HOT!) where conventional silicon-based electronics (limited to 350 C)

cannot function.

SiC-BASED MICROSYSTEMS


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SiC-BASED PRESSURE SENSORS

SiC HAS EXCELLENT MECHANICAL PROPERTIES FORUSE AS A HARSH ENVIRONMENT PRESSURE SENSOR

(T > 500 C, SILICON UNDERGOES PLASTIC DEFORMATION)

STRONG MATERIAL

LARGE PIEZORESISTIVE COEFFICIENTS

FORM DIAPHRAM OF SiC AND INTEGRATE WITH ELECTRONICS

WIDE RANGE OF APPLICATIONS

AERONAUTIC ENGINE APPLICATIONS

AUTOMOTIVE APPLICATIONS

WIND TUNNELS MATERIAL PROCESSING

TWO APPROACHES

SiC DIAPHRAM ON Si

SiC DIAPHRAM ON SiC SiC Pressure Sensor

with Electronics


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HIGH TEMPERATURE SIC PRESSURE SENSORS:

KEY TECHNOLOGIES

Key technolog ies:

SiC micromachining

High temperature contacts

High temperature packaging

SiC pressure sensor, magnified Diagram of SiC pressure sensor

metal contactsTi / TaSi2/ Pt

strain gages

n-type SiC

isolation layerp-type SiC

substrate

n-type SiC


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TECHNOLOGY DEVELOPMENT: SIC MICROMACHINING

SiC is chem ically inert and therefore di f f icul t to m icrom achine

Micromachin ing m ethods for SiC:

Electrochemical etching

- developed by Kulite, early 1990s

Backside of SiC diaphragm fabricated

by electrochemical etching

60 m etch depth; 1 mm diam

Backside of SiC diaphragm fabricated

by DRIE

50 m etch depth; 1 mm diam

Deep reactive ion etching (DRIE)

- developed by GRC, 1999


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TECHNOLOGY DEVELOPMENT: SIC MICROMACHINING

Advantages of DRIE m icrom achining pro cess for SiC:

Provides vertical sidewalls, smooth etched surfaces

Uses a durable and readily applied etch mask (nickel or indium-tin-oxide)

High rate (0.3 m/min); uses automated equipment

DRIE system in GRC cleanroom Hole etched by DRIE through a 100 m thickSiC wafer

The DRIE process f or SiC is an enabl ing technolog y for harsh environment MEMS


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TECHNOLOGY DEVELOPMENT: HIGH TEMPERATURE CONTACTS

A three layer con tact struct ure, t i tanium /tantalum si l ic id e/plat inum , has shownm in imal deg radati on in performance after m ore than 1000 hrs at 600 C

Contact resistance as a function of

time exposed to 600 C. Recently,

1000 hrs at 600 C has been

demonstrated.

Auger depth profile of contact exposed to

600 C for 100 hrs. Following burn-in,

a platinum silicide diffusion barrier is

formed, which protects the underlying

layers from oxidation.

0

5

10

15

20

25

30

35

40

45

50

0 100 200 300 400 500 600 700 800 900 1000

Time (hours)

Averagespec

ificcontactResistivity(10-5

-cm

2)

n-type 6H-SiC n-type 4H-SiC

Measured after treatment at 600oC in Air 100 Hours @600 C/Air

0

10

20

30

40

50

60

70

80

0 50 100 150 200 250 300 350 400 450 500 550 600 650 700

Depth (nm)

AtomicConc.(%)

C O Pt Si Ti Ta

Pt

Si

Ta Ti

C

Si

O

Ti


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TECHNOLOGY DEVELOPMENT:HIGH TEMPERATURE SiC PRESSURE SENSOR PACKAGING

Cross section of SiC pressure sensor package

Hi h T SiC P S E i T


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High Temperature SiC Pressure Sensor: Engine Test

Above: 500 C SiC pressure sensor

Above: data from the engine test is superimposed on

calibration data for the sensor. A 4 mV output shift is

produced upon exposure to the peak temperature.

Further work will aim to decrease sensor drift.

Left: SiC pressure sensor installed in compressor

deswirl region of Honeywell AS907 core engine.

SiC Pressure Sensor Engine Test

100

110

120

130

140

150

160

170

180

0 100 200 300 400 500 600

Temperature (degrees C)

SensorO

utput(mV)

0 psig

300 psig

Power Up

Power Down

Off

IdleFull


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MICROFABRICATED TIN OXIDE BASEDMICROFABRICATED TIN OXIDE BASED

NOx AND CO SENSOR TECHNOLOGYNOx AND CO SENSOR TECHNOLOGYMICROFABRICATED FOR MINIMAL SIZE, WEIGHT AND POWER CONSUMPTION

MICROMACHINED TO MINIMIZE POWER CONSUMPTION AND IMPROVE RESPONSE TIME

TEMPERATURE DETECTOR AND HEATER INCORPORATED INTO SENSOR STRUCTURE

NANOFABRICATION OF TIN-OXIDE TO INCREASE SENSOR STABILITY

STRUCTURE OF A MICROFABRICATED TIN-OXIDE SENSOR


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ALTERNATE PROCESSING YIELDS

IMPROVED SENSOR PROPERTIES

PROPERTIES OF NANOCRYSTALLINE SNO2 THIN FILM FROMSOL-GEL PROCESS

SMALL PARTICLE SIZE

HIGH POROSITY

LARGE SURFACE AREA

HOMOGENEOUS CHEMICAL AND PHYSICAL STRUCTURE

ADVANTAGES FOR SENSOR APPLICATIONS

HIGH SENSITIVITY

FAST RESPONSE

STABLE OPERATION


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Nanocrystalline SnO2 after annealing at 600C for 30 minutes.


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THE RESPONSE OF A DOPED SNO2

SENSOR TO CYCLED CONCENTRATIONS OF NOX

STEPS: 0 TO 3 TO 6 TO 12 TO 25 TO 50 PPM AND BACK TO 0 IN AIR

T= 350C

PACKAGING TAILORED FOR THE


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SnO2 on Interdigitated

Fingers

Temperature Detector

SnO2 SENSORS ON CERAMIC SUBSTRATE

RATHER THAN SILICON FOR ENGINE TESTING

APPLICATION

Makel Engineering, Inc .


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Demonstration Testing Of NOx Sensor In Gas Turbine

Exhaust Stream

0

500

1000

1500

2000

2500

0 20 40 60 80 100 120 14

Time (min)

Sig

nalCounts

sensor off scale high with

no air dillution of exhaust

NOx sensor off scale low asair dillution is adjusted

engine load is

increased

Approximately 540 PPM

NOx (30 PPM measured)

end of test

Oxygen Sensor Signal

(approximately 5%)

Species CEMMeasurement

MSESMeasurement

NOx 593 PPM 540 PPM

CO 3000 PPM N/A

O2 4.57% 5%

Industry Standard

Continuous Emission

Monitoring Equipment

50 Hp Gas Turbine

Makel Engineering, Inc .

GLENNAN MICROSYSTEM INITIATIVE


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SnO2

Resistor

TiO2

Resistor

Metal-SiC

Schottky diodes

Metal-Reactive Insulator

SiC Schottky diodes

Electrochemical Oxygen

Sensor

SelectivelyFiltered

SnO2 Resistors

GLENNAN MICROSYSTEM INITIATIVE

MICROFABRICATED EMISSION SENSOR ARRAY CONCEPT

HIGH TEMPERATURE ELECTRONIC NOSE

SiC-BasedPressure Sensor

Makel Eng ineering , Inc .

B b d I t t d El t i N S t


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Brassboard Integrated Electronic Nose System

High Temperature Nose Requires Packaging BeyondRoom Temperature Systems

Sensor Operating Temperature400 C with +/- 8 C stability in

dynamic environment

Sensors Tested

Oxygen (0 to 21%)

CO (0 to 3000 PPM) Hydrocarbons (0 to 2500 PPM C2H2)

NOx (0 - 300 PPM)

SiC

Hydrocarbon

Sensors FromNASA GRC

SnO2 Sensor

From CWRUPrototype Sensor Head

OSU

Sensor

Electronics and Sensor Head

Makel Eng ineering , Inc .Makel Eng ineering , Inc .


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Harsh Environment Demonstration Testing

1.9 liter, four cylinder HCCI at U.C. Berkeley (propane/air)

0

500

1000

1500

2000

2500

3000

0 5 10 15 20 25 30 35 40

Time (minutes)

Signal(m

V)

Oxygen SensorSnO2 Sensor

SiC Hydrocarbon Sensor

Engine Start

Expected Drop In

O2 Signal

Rise in UnburnedHydrocarbons At Start Up

And Throttle Adjustment

Steady Engine Operation

Engine Turned

Off

Exhaust Gas Temperature = 337 C

Phi= 0.35

O2=14%

NOx


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SUMMARY

RELIABILITY IS A SIGNIFICANT ISSUE IN HIGH TEMPERATURE

SENSORS AND ELECTRONICS

PHYSICAL AND CHEMICAL SENSORS

HIGH TEMPERATURE ELECTRONICS/SENSORS

SENSOR AND ELECTRONICS DEVELOPMENT

TAILOR DEVICE TO APPLICATION/WHOLE SYSTEM APPROACH

MULTILAYER LAYER APPROACHES NECESSARY

NEW MATERIALS DEVELOPMENT

CONNECTIONS WITH FROM DEVICE TO OUTSIDE USER A MAJOR

COMPONENT OF DEVICE RELIABILITY

LEAD WIRES

CONTACTS

PACKAGING

DEMANDS ON RELIABLITY OF INDIVIDUAL COMPONENTS WILLINCREASE WITH THE DEVELOPMENT OF INTEGRATED

MICROSYSTEMS

hunter dev app high temp

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