Public

22 January 2021, EUV-FEL Workshop, Japan / Cloud

High-NA EUV Lithography Exposure Tool For EUV roadmap extension

Carl Zeiss SMT GmbH, Oberkochen, GermanyPaul Graeupner

ASML Veldhoven, The NetherlandsJan van Schoot, Jos Benschop, Sjoerd Lok, Eelco van Setten, Ruben Maas, Kars Troost, Jo Finders

Public

EUV product roadmap

0.33 NA, 13 nm

EUV

wafers/hours (wph) are based on 30mJ/cm²1) 185wph@20mJ/cm2 / 150wph@30mJ/cm²2) 170wph@20mJ/cm²3) Throughput upgrade

NA, Half pitchWavelength

Product: Matched Machine Overlay (nm)|Throughput(wph)

Product status DefinitionDevelopmentReleased

NXE:3600D

1.1 nm | 160 wph

NEXT

<1.1 nm | >220 wph

NXE:3400C

1.5 nm | 135 wph2 / 145 wph3

2020 2021 2022 2023 2024 2025

0.55NA, 8 nmEXE:5000

1.1 nm | 185 wph1

EXE:5200

<1.1 nm | >220 wph

EUVL Sep 2020

Slide 2

0.55NA enabling affordable scaling beyond current decade

0.33NA continuous imaging, overlay and productivity improvements in line

with customers advanced node HVM requirements.

Public

NXE productivity reached 170 wafers per hour Productivity at higher exposure dose continues to increase

SPIE Feb 2021

Slide 3

ATP test: 26x33mm2, 96 fields, 20mJ/cm2 / 30mJ/cm2

Thro

ughput [w

afe

rsper

hour]

170

160

150

180

140

110

100

90

80

70

60

50

40

30

20

10

0

130

120

‘14

Q1

‘14

Q2

‘14

Q3

‘14

Q4

‘15

Q3

‘15

Q4

‘16

Q2

‘16

Q4

‘17

Q1

NXE:3350B

at customers

‘17

Q3

‘17

Q3

‘18

Q1

NXE:3400B

at customers

NXE:3350B

ASML factory

NXE:3300B

at customers

NXE:3300B

NXE:3350B

NXE:3400B

NXE:3400B

ASML factory

NXE:3400B

ASML factory (proto)

‘19

Q1

‘19

Q2

NXE:3400C

At customers

NXE:3400B

at customers

‘19

Q3

NXE:3400C

ASML factory

‘19

Q4

‘20

Q1

‘21

Q1

NXE:3400C

24

NXE:3400C

ASML factory

Roadmap

> 200 wph

NXE:3400C

at customers

NXE:3600D

ASML factory

NXE:3600D

Public

EUV collector transmission degradation meeting targetAverage degradation rate 0.1%/GP on NXE:3400B/C

SPIE Feb 2021

Slide 4

NXE:3300B NXE:3350B NXE:3400B

2015 2017 2019 2020100

90

80

70

60

50

40

30

20

10

00 20 40 60 80

Colle

cto

r tr

ansm

issio

n [%

]

Gigapulse

Degradation rate [%/GP]

Power [W]

0.6

80

0.4

125

0.15

250

0.1 (average)

250

0 20 40 60 80 100 0 20 40 60 80 100 0 20 40 60 80 100 120 140 160

average

average

180 200

NXE:3400B/C NXE:3400C

<0.05 %/GP

>3x higher source power

>20% increase in average collector transmission

Improved availability due to longer collector lifetime

Public

Wafers exposed on EUV systems grows exponentially

SPIE Feb 2021

Slide 5

Q1 Q2 Q3 Q4 Q1

2020

Q2 Q3 Q4

2019

8545 533831 55 62 76

4 Mln

26 Mln

Cum

ula

tive

wafe

rsexposed

on E

UV

Nu

mb

er

of N

XE

:34

00

x s

yste

ms

sh

ipp

ed

(cu

mu

lative

)

Number of NXE:3400x systems

shipped (cumulative)

Public

Customer flagship products are powered by EUV

Source: https://www.samsung.com/semiconductor/minisite/exynos/products/mobileprocessor/exynos-9825/, https://consumer.huawei.com/en/campaign/kirin-990-series/

Public

Public

EUVL Sep 2020

Slide 7

Outline

High-NA agenda

• Why High-NA

• Infrastructure

• Architecture

• High-NA manufacturing

Summary

Public

13.5 EUVReso

luti

on

, n

m

= k

1x W

ave

leng

th/ N

A

Wavelength, nm

1985 1990 1995 2000 2005 2010 2015 2020

KrF (248nm)

ArF (193nm)

EUV (13.5nm)

10

100

1000 𝐶𝐷 = 𝑘1λ

𝑁𝐴

High-NA (13.5nm)

SPIE Febr. 2020

Slide 8

ArF Immersion (193nm)

Over 35 years 2 orders of magnitude resolution reductionby working on Wavelength, NA and k1

i-line (365nm)436 g-line365 i-line

248 KrF193 ArF and Immersion

NA+67%

XT:1400

NXT:1950i

NXE:3400

High-NA

NA+45%

Public

EUVL 2020

Slide 9

EXE platform to further enable affordable shrink (3 nm Logic)Total patterning cost comparison: immersion, NXE, EXE

LE LE-2 LE-3 LE-4 LE LE-2 LE-3 LE-4 LE LE

Immersion NXE (EUV 0.33NA) EXE (EUV 0.55NA)

(20mJ) (30mJ)

100

200

300

400

Rela

tive

co

st

pe

r la

ye

r

0

Non-litho cost

Litho cost

Source: Jan van Schoot et al. (ASML) ‘High-NA EUV lithography exposure tool progress’ SPIE 2019

Public

High-NA contrast reduces Local CDUkey to continue Moore’s law: Resist, Dose, Contrast

SPIE Febr. 2020

Slide 10

Whereby:

s = resist blur

Dsize = dose to size

ILS = image log slope

p = pitch

• Minimize Local variation by

• Improved resist: absorption ↑,

blur ↓ , chemical shot noise ↓

• Maximize contrast: high-NA,

advanced mask

Prone to fail

𝐿𝐶𝐷𝑈 = 3 ∙ℎ𝑣

𝑓 ∙ 𝛼 ∙ 𝐴𝑟𝑒𝑎∙

1

𝐷𝑠𝑖𝑧𝑒∙

2

𝐼𝐿𝑆

Resist Dose Contrast(blur/chemistry)

10nm CH, 20mJ/cm2 → 1000 photons

30% absorption → 300 photons

30% determines the edge → 100 photons

EUV comes with

less photons/J

Public

High-NA contrast reduces Local CDU and defectsKey to continue Moore’s law: Resist, Dose, Contrast

1:1 CH Ta Mask

MOR Annular scaled

45 mJ/cm²

0.0

2.0

2.5

11

3.0

13 15 17 19 21 23 25

LC

DU

3σ

[nm

]

Half Pitch [nm]

1.5

1.0

0.5

0.33NA

Att PSM 75 mJ/cm²

High-NA: smaller CH’s at same dose

resis

t

Slide 11

threshold

20nm 1:1 Contact Holes

x-position [nm]0 10 20 30 40

Aeria

l im

age in

tensity [au]

0.0

0.5

1.0

EUVL Sep 2020

Whereby:

a = resist absorption

f = proportionality factor with eg QE

Dsize = dose to size

ILS = image log slope

Area = area containing photons contributing to LCDU

𝐿𝐶𝐷𝑈 3𝜎, 𝑛𝑚 = 3 ∙ℎ𝑣

𝑓 ∙ 𝛼 ∙ 𝐴𝑟𝑒𝑎∙

1

𝐷𝑠𝑖𝑧𝑒∙

2

𝐼𝐿𝑆

Dose ContrastResist

Yen, Hansen, EUVL workshop (2018)

• Edge photons and contrast determine hole size variability

• Center photons open developer path to bottom “pipe cleaners”

• High-NA improves both aspects

0.55NA

20nm 1:1 Contact Holes

0.0

0.5

1.0

0 10 20 30 40

x-position [nm]

Prone to fail

Public

EUVL Sep 2020

Slide 12

20nm CH’s: Defects down by several ordersImpact of High-NA 2: more center photons

Gijsbert Rispens, SPIE AL (2020)

0 10 20 30 400.0

0.2

0.4

0.6

0.8

1.0

X position [nm]

0.55NA 33 mJ/cm²

Ae

ria

lim

ag

e in

ten

sity

(no

rm.)

0 10 20 30 40

X position [nm]

0.33NA 45 mJ/cm²

Ae

ria

lim

ag

e in

ten

sity

(no

rm.)

0.0

0.2

0.4

0.6

0.8

1.0

~ 2x photons

open

closed

17.5 25.0

-710

-510

-310

-110

pro

babili

ty

20.0 22.5 27.5

Proadblock = 3.2e-06

17.5 25.020.0 22.5 27.5

CD [nm]CD [nm]

Printing contact holes

Roadblocks

Bridging holes

Proadblock ~ 0

10lo

g(D

efe

ct

rate

)

Amount of center photons [a.u.]

+ 10% photons ~ 1 order less defects

De Bisschop, JM3 (2018)

0.33NA 45 mJ/cm² 0.55NA 33 mJ/cm²

Public

14nm CH’s: 0.55NA/SE expected to be better than 0.33NA/DE

Based on aerial images

0.3

3 N

A0.5

5 N

A

+

0 10 20 30 400.0

0.2

0.4

0.6

0.8

1.0

X position [nm]

Aerialim

age [a.u

.]

aerial image intensity

EXE:5000

NXE:3400

EUVL Sep 2020

Slide 13

Slope 1.35x and local photons 1.4x

Prediction: LCDU and defectivity

better despiteSE at smaller resolution

Sin

gle

Exp

ose

Do

ub

le E

xp

ose

Public

EUVL Sep 2020

Slide 14

Outline

High-NA agenda

• Why High-NA

• Infrastructure

• Architecture

• High-NA manufacturing

Summary

Public

2018 2019 2020

Dose [mJ/cm²] 57 45 39

LWRunb [nm] 3.1 3.0 2.9

Z-factor [10-6mJ nm³] 1.2 0.9 0.7

2018 2019 2020

Dose [mJ/cm²] 66 65 53

LCDU [nm] 2.7 2.2 2.1

Z-factor [10-6mJ nm³] 3.8 2.5 1.9

EUVL Sep 2020

Slide 15

Continuous resist improvement for multiple use casesProgress is needed moving forward

EUVJ-2107

Non-CAR Non-CAR Non-CAR

Resolution: (P26 Linesand Spaces)

Resist type1

1Resist system: CAR Chemical Amplified resist

All data exposed with NA=0.33 scanner

EUVJ-2107

Non-CAR Non-CAR CARResist type1

2013 2015 2017 2019 2020

0

1

2

3

4

Z-F

acto

r [1

0-6

mJ n

m³]

2014 2016 20182012

P32 LS

P26 LS

2019 2020

0

1

2

3

4

Z-F

acto

r [1

0-6

mJ n

m³]

2018

P40 CH

Lines and Spaces Contact Holes

CARNon CAR

*Z-factor = Res3 x LWR2 x Dose

Z-factor comparison only valid at

equal contrast

Resolution: (P40 Hexagonal Pillars/CH)

Public

2018 2019 2020

Dose [mJ/cm²] 57 45 39

LWRunb [nm] 3.1 3.0 2.9

Z-factor [10-6mJ nm³] 1.2 0.9 0.7

2018 2019 2020

Dose [mJ/cm²] 66 65 53

LCDU [nm] 2.7 2.2 2.1

Z-factor [10-6mJ nm³] 3.8 2.5 1.9

EUVL Sep 2020

Slide 16

Continuous resist improvement for multiple use casesProgress is needed moving forward

EUVJ-2107

Non-CAR Non-CAR Non-CAR

Resolution: (P26 Linesand Spaces)

Resist type1

1Resist system: CAR Chemical Amplified resist

All data exposed with NA=0.33 scanner

EUVJ-2107

Non-CAR Non-CAR CARResist type1

2013 2015 2017 2019 2020

0

1

2

3

4

Z-F

acto

r [1

0-6

mJ n

m³]

2014 2016 20182012

P32 LS

P26 LS

2019 2020

0

1

2

3

4

Z-F

acto

r [1

0-6

mJ n

m³]

2018

P40 CH

Lines and Spaces Contact Holes

CARNon CAR

*Z-factor = Res3 x LWR2 x Dose

Z-factor comparison only valid at

equal contrast

Resolution: (P40 Hexagonal Pillars/CH)

Non-CAR CAR

HP12nm Lines and Spaces

Public

PSI High-NA resist evaluation for lines and pillars/CH

Resolution [hp] 13nm 12nm 11nm 10nm

Inorganic Resist 75 mJ/cm²58 mJ/cm²62 mJ/cm²

58mJ/cm²1.7nm

EUVL Sep 2020

Slide 17

9nm 8nm

82 mJ/cm²59 mJ/cm²

Chemically Amplified

Resist (CAR)

Inorganic Resist

Chemically Amplified

Resist (CAR)

Resolution [hp] 24nm 20nm 18nm

16 mJ/cm² 21 mJ/cm²

19 mJ/cm² 33 mJ/cm²

22nm

22 mJ/cm²

17 mJ/cm²

58 mJ/cm² 52 mJ/cm²

Ongoing imaging benchmarking of High-NA tools (PSI, BMET5, NXE)

Reference:

Contrast-loss investigation for the charactierization of resist and exposure tool performances Timothée Allenet, SPIE-AL, 11517-16

Public

CXRO/LBNL shows resist capability for Lines and Pillars

EUVL Sep 2020

Slide 18

CAR

Lines and Spaces

Resolution (nm)

11nm 10nm

Inpria Resist

Lines and Spaces

9nm 8nm

Inpria Resist

Regular Pillars

Illumination

F2X frequency

doubling

13nm 12nm 11nm 8nm

Inpria Resist

Tip-2-TipsSMO

MP

Resist & Feature

14P28 14P35

F2X frequency

doubling

12nm13nm

C. Anderson et al., CXRO, SPIE 2020

Public

EUVL Sep 2020

Slide 19

Outline

High-NA agenda

• Why High-NA

• Infrastructure

• Architecture

• High-NA manufacturing

Summary

Public

EUVL Sep 2020

Slide 20

High-NA system architecture finalized

New Frames

Improved thermal and dynamic

control with larger optics

Lens & illuminator

• NA 0.55 for high contrast

• High transmission

Improved Source position

Allows for larger transmission,

compatible with 0.33 NA

Wafer Stage

2x increase in acceleration

Mask Stage

4x increase in acceleration

Improved metrology

2~3x improvement in overlay/focus

Public

EUV High-NA requires an anamorphic lens

0.33NA

0.55NA iso

0.55NA ana

ML reflection

Mask MoSi Multilayer

Angle of incidence [deg]

Re

fle

ctio

n

0 5 10 15 200

0.1

0.2

0.3

0.4

0.5

0.6

0.7

104 mm

13

2 m

m Mask

4x

26 mm

33

mm

0.33NA

Wafer 0.33NA prints a

Full Field

4x/8x

0.55NA

16

.5 m

m

QF0.55NA prints

a Half Field11 deg required

for 0.33NA

~11deg

0.33NA

~8deg

~18deg

0.55NA iso

~8deg

~9deg

0.55NA ana

Note: for simplicity M3D effects

are ignored, only multi-layer

effect taken into account

SPIE Febr. 2020

Slide 21

Public

SPIE Febr. 2020

Slide 22

High-NA brings throughput >185 wphFast stages enable high throughput

Acceleration of wafer stage ~2x..

Acceleration of mask stage ~4x..

WS, RS current

performance

WS 2x, RS 4x

HF

FF

35

Th

rou

gh

put [3

00

/hr]

Source Power/Dose [W/(mJ/cm²]

Throughput for various source

powers and doses

0.33NA

High-NA

0 5 10 15 20 25 30

200

180

160

140

120

100

80

60

40

20

0

300W Watt

20mJ/cm²

Public

Recent EUV power improvement allows higher doseServicing concept for high-NA identical to 0.33NA source

SPIE Febr. 2020

Slide 23

Continuous source improvements:• Allow for more throughput

• Allow for more dose

• Improved Local CDU

So

urc

e p

ow

er

[W]

2008 2010 2012 2014 2016 2018 2020 2022 2024

Target

Future target

Development

Production

Modularity of the vessel reduces repair times

100

0

200

300

400

500

Public

High-NA projection optics design availableLarger elements with tighter specifications

NA 0.33 NA 0.55

Design examples

Extreme aspheres enabling

further improved wavefront / imaging performance

Big last mirror driven by

High-NA

Obscuration enables

higher optics Transmission Mask level

Wafer level

SPIE 2019

Slide 24

Public

High NA optics design supports

significant reduction in

wavefront RMS

systems

rms

[nm

]

NXE:3350B NXE:3400B

High NA

NXE:3300B

Public

EUVL Sep 2020

Slide 25

Full wafer and tool-to-tool CD control well below 10% CDBalanced performance budgets for many different use-cases and pupils

CD

err

or

[%]

0.0%

2.0%

4.0%

6.0%

8.0%

10.0%

12.0%

CDUProximity matching

Public

EUVL Sep 2020

Slide 26

Outline

High-NA agenda

• Why High-NA

• Infrastructure

• Architecture

• High-NA manufacturing

Summary

Public

Top Module Shift-in Shift-out test successful18 tons moves at mm-level accuracy

EUVL Sep 2020

Slide 27

Public

EUVL Sep 2020

Slide 28

Reticle stage short stroke module manufacturing progressing

Manufacturing of

cooling channelsFinalized

bottom plate

First Reticle Stage

short stroke

Public

EUVL Sep 2020

Slide 29

Long stroke motor mask stage risk build-down

Moving at NXE:3400 profile Moving at EXE:5000 profile (4x) Model verification

- modeled- measured

Public

EUVL Sep 2020

Slide 30

Wafer stage cable slab guiding concept in testDynamical testing ok

Slab test Y-axes Slab test X-axes Crash test

Public

EUVL Sep 2020

Slide 31

Wafer stage modules being manufactured

Wafer stage

design ready

Wafer stage position

module manufactured

Proto Actuator Coils

for testingMirror block manufacturing started

Public

First images taken with High-NA ILIAS proto sensorNew ILIAS-sensor with improved marks for High-NA

first image

High-NA ILIAS proto sensor

installed in NXE:3400 WS

Zernike #

-0.1

-0.2

-0.3

0.0

0.1

0.2

First aberration

scan results (@ 0.33NA )

EUVL Sep 2020

Slide 32

Public

Ensure impact

of Main Frame on

POB in spec

EUVL Sep 2020

Slide 33

Good progress with EXE frame development Large frames modeled, improved welding

Frame

construction

(welding)

Traditional welding:

4 weeks / frame

Robotized E-beam welding:

3 days / frame

~5cm

34x !

time

Public

EUVL Sep 2020

Slide 34

Bottom Base Frame manufacturing has started

System for final machining

• Sub blocks pre-machined

• Welded to one piece with Electron Beam welding

• After welding the total frame is fine machined on large milling center

• Final machining planned later this year

Pre-machining started April ‘20

Public

EUVL Sep 2020

Slide 35

Top Frame machining on trackStatus May 2020

Phase 1 (May 2020):

top frame mono rough machining

Above is a picture of the first top

frame being prepped for

rough machining

Public

EUVL Sep 2020

Slide 36

First mirror groundAt this moment many more mirror in manufacturing

Phase 1 (May 2020):

top frame mono rough machining

Public

Slide 37

EXE:5000 mirror metrology is operational Measuring a 1000kg anamorphic mirror with picometer accuracy

Setup station Outer Handling Vacuum Chamber Assembly & Qualification Location

Thermalization room

Port outer handling

Mirror transfer robot (1)

Mirror storage Mirror transfer robot (2)

Mirror transfer system

Load lock Vacuum chamber

(measure cell)

Service and

maintenance station

Mirror flatness

measurement

EUVL 2020

Public

EUVL Sep 2020

Slide 38

Mirror Metrology results

- =

High-NA metrology 3400 metrology

12.4 nm RMS(w/o Z1-Z4)

difference

1st polishing loop

Part corrected during

1st polishing loop

1st crosscheck with

known NXE:3400 mirror

High-NA mirror

Public

EUVL Sep 2020

Slide 39

Reproducibility testsAir turbulences successfully eliminated by transition to vacuum

AIR VACUUM

Sa

me

sca

le

Further improve dynamics effects by

Better mounting

Optimizing exposure time and

number of images

Rigid body movement correction

Air turbulences Tilts due to rigid body vibrations

Public

EUVL Sep 2020

Slide 40

EXE:5000 system global design completedSolid progress on system design and optics development and – manufacturing

Zeiss Oberkochen

CZO facility

Mirror manufacturing

started

High-NA optics metrology equipment

in cleanroom at Zeiss SMT

Building the optics

assembly hall

Full-scale High-NA

mirror ready for

polishing

Public

EUVL Sep 2020

Slide 41

High-Na cleanroom constructions in progress

Wilton

High-NA Cabins to be

delivered according plan

Wilton Factory EXE:5000 Addition

Current stateVeldhoven

Public

EUVL Sep 2020

Slide 42

Outline

High-NA agenda

• Why High-NA

• Infrastructure

• Architecture

• High-NA manufacturing

Summary

Public

EUVL Sep 2020

Slide 43

Summary

Resist

EUV 0.33NA is used in volume production, adoption continues to grow

• Adoption continues to grow to reduce pattering complexity and cost

• Used for 7nm and 5nm Logic nodes, 10nm-class DRAM

• Productivity is improving to beyond 3000 WpD capability

High-NA is logical roadmap extension by improving contrast

• LCDU and defect print rate reduced by improved contrast, dose and resist

• Contrast is improved by a new anamorphic lens; imaging well controlled

• Throughput at higher dose maintained by transmission and source power

High-NA EUV Scanner realization is in full progress

• Feasibility of stages, sensors and many more demonstrated

• System design available, manufacturing of modules ongoing

• Optics design finalized, mirror metrology in place,

manufacturing has started

Public

EUV 0.33NA is used in volume production, adoption continues to grow

• Adoption continues to grow to reduce pattering complexity and cost

• Used for 7nm and 5nm Logic nodes, 10nm-class DRAM

• Productivity is improving to beyond 3000 WpD capability

High-NA is logical roadmap extension by improving contrast

• LCDU and defect print rate reduced by improved contrast, dose and resist

• Contrast is improved by a new anamorphic lens; imaging well controlled

• Throughput at higher dose maintained by transmission and source power

High-NA EUV Scanner realization is in full progress

• Feasibility of stages, sensors and many more demonstrated

• System design available, manufacturing of modules ongoing

• Optics design finalized, mirror metrology in place,

manufacturing has started

EUVL Sep 2020

Slide 44

Summary

Resist

0 10 20 30 400.0

0.2

0.4

0.6

0.8

1.0

X position [nm]

Aerial im

age [a.u

.]

aerial image intensity

High contrast puts

the photons where you need them

Public

Thank you for your

attention

This work was funded by the European Commission and the Federal Ministry of Education and Research (Germany) by the ECSEL JU Grant

Agreement SeNaTe (662338, FKz 16ESE0036K), TAKE5 (692522, FKz 16ESE0072K), TakeMi5 (737479), and TAPES3 (783247, FKz 16ESE0287K).

Special thanks goes to:

• Jara Garcia Santaclara

• Joost van Bree

• Gunes Nakiboglu

• Pieter de Groot

• Jason Steward

• Joost van Bree

• Chrysostomos Batistakis

• Bernardo Oyarzun

• Michael Renders

• Rob van Ballegoij

• Claire van Lare

• Rik Hoefnagels

• Lidia van Lent

• Zuhal Tasdemir, PSI

• Patrick Naulleau, CXRO

• Chris Anderson, CXRO

• Bram Slachter

• Gijsbert Rispens

• Gerardo Bottiglieri

• Jeannot Driedonkx

And the High-NA teams in Wilton,

San Diego, Oberkochen, and Veldhoven