growth of carbon nanomaterials by chemical vapour deposition

1
Growth of Carbon Nanomaterials by Chemical Vapour Deposition 1 Department of Electronic & Electrical Engineering, University of Bath, Claverton Down, Bath, BA2 7AY, United Kingdom * [email protected] G. D. T. Spratt 1 & M. T. Cole 1* Aims To synthesise carbon nanotubes (CNTs) using the method of chemical vapour deposition (CVD) and investigate the effects of adjusting the growth environment to maximise the yield and quality. To use photolithography techniques in order to produce the University of Bath logo in CNTs, to help understand potential uses within electronic technology and facilitate device development. Carbon Nanotubes CNTs are tubular structures with dimensions at nanoscale, made purely from covalent carbon interactions. CNTs can be single or multi-walled and they possess desirable properties of high electrical conductivity, semi conductivity, mechanical strength and elasticity, thermal conduction and electron emission. Preparing Catalyst Films - Evaporation CVD appears to be the most promising method for producing high yield, low cost CNTs due to low temperatures and short growth times. The CVD method requires a catalyst to grow CNTs at these low temperatures. A physical vapour depositor was required to fabricate an aluminium buffer and iron catalyst onto a silicon based substrate. Growing Carbon Nanotubes - CVD An Aixtron Black Magic Chemical Vapour Deposition (CVD) reactor in 3W1.5a was used to grow CNTs upon the fabricated catalysts, using a mixture of carbon containing acetylene, hydrogen gases and heat. Potential uses: Energy storage Molecular electronics Thermal and structural materials Electrical conduction Fabrics and fibres Civil applications Biomedical Air and water filtration Flexible electronics CNT properties factored by: Chirality Length Number of walls Diameter Purity Results Growth heights of every sample were measured using a microscope and compared to the conditions of time, temperature and pressure varied in the CVD chamber. Analysis Comparing results from Raman spectra with results from other CNT experiments helped to conclude that CNTs were produced and not any other allotrope of carbon. The data collection enabled observations to be made about the most favourable conditions for growth of CNTs, which was estimated as 600s, 750and 10 mbar. Further Research Now that all the facilities at the university are functioning and able to grow CNTs, a larger emphasis on data collection and analysis can be placed in further experiments. More focus can be placed onto the factors affecting the growth mechanism and develop a recipe with optimal growth conditions for CNTs, progressing research of CNTs and furthering their advance into electrical applications. The CVD reactor also has the capability to grow graphene using similar techniques, which can also be researched and explored into their applications. 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 0 500 1000 1500 2000 2500 3000 3500 Intensity (counts) Wavelength / cm -1 30s_1st growth series_532nm_.wdf 0 50 100 150 200 250 300 500 600 700 800 900 1000 CNT Growth Height / m Temperature / ºC CNT Heights vs Temperature Silicon Mean Height Silicon Dioxide Mean Height 0 50 100 150 200 250 300 0 10 20 30 40 50 60 70 80 CNT Growth Height / μm Pressure / mbar CNT Height vs Pressure Silicon Mean Height Silicon Dioxide Mean Height 0 50 100 150 200 250 0 500 1000 1500 2000 2500 3000 CNT Growth Height / m Time at Temperature / Seconds CNT Heights vs Time Silicon Mean Height Silicon Dioxide Mean Height

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Page 1: Growth of Carbon Nanomaterials by Chemical Vapour Deposition

Growth of Carbon Nanomaterials by

Chemical Vapour Deposition

1 Department of Electronic & Electrical Engineering, University of Bath, Claverton Down, Bath, BA2 7AY, United Kingdom

* [email protected]

G. D. T. Spratt1 & M. T. Cole1*

Aims

To synthesise carbon nanotubes (CNTs) using the method of chemical vapour deposition (CVD) and

investigate the effects of adjusting the growth environment to maximise the yield and quality. To use

photolithography techniques in order to produce the University of Bath logo in CNTs, to help understand

potential uses within electronic technology and facilitate device development.

Carbon Nanotubes

CNTs are tubular structures with dimensions at nanoscale, made purely from covalent carbon

interactions. CNTs can be single or multi-walled and they possess desirable properties of high electrical

conductivity, semi conductivity, mechanical strength and elasticity, thermal conduction and electron

emission.

Preparing Catalyst Films - Evaporation

CVD appears to be the most promising method for producing high yield, low cost CNTs due to low

temperatures and short growth times. The CVD method requires a catalyst to grow CNTs at these low

temperatures. A physical vapour depositor was required to fabricate an aluminium buffer and iron

catalyst onto a silicon based substrate.

Growing Carbon Nanotubes - CVD

An Aixtron Black Magic Chemical Vapour Deposition (CVD) reactor in 3W1.5a was used to grow CNTs

upon the fabricated catalysts, using a mixture of carbon containing acetylene, hydrogen gases and heat.

Potential uses:

• Energy storage

• Molecular electronics

• Thermal and structural materials

• Electrical conduction

• Fabrics and fibres

• Civil applications

• Biomedical

• Air and water filtration

• Flexible electronics

CNT properties factored by:

• Chirality

• Length

• Number of walls

• Diameter

• Purity

Results

Growth heights of every sample were measured using a microscope and compared to the conditions of

time, temperature and pressure varied in the CVD chamber.

Analysis

Comparing results from Raman spectra with results from other CNT experiments helped to conclude

that CNTs were produced and not any other allotrope of carbon.

The data collection enabled observations to be made about the most favourable conditions for growth of

CNTs, which was estimated as 600s, 750℃ and 10 mbar.

Further Research

Now that all the facilities at the university are functioning and able to grow CNTs, a larger emphasis on

data collection and analysis can be placed in further experiments. More focus can be placed onto the

factors affecting the growth mechanism and develop a recipe with optimal growth conditions for CNTs,

progressing research of CNTs and furthering their advance into electrical applications.

The CVD reactor also has the capability to grow graphene using similar techniques, which can also be

researched and explored into their applications.

0

1000

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4000

5000

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7000

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9000

0 500 1000 1500 2000 2500 3000 3500

Inte

nsi

ty (

cou

nts

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Wavelength / cm-1

30s_1st growth series_532nm_.wdf

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150

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250

300

500 600 700 800 900 1000

CN

T G

row

th H

eight

/ 𝜇

m

Temperature / ºC

CNT Heights vs Temperature

Silicon Mean Height Silicon Dioxide Mean Height

0

50

100

150

200

250

300

0 10 20 30 40 50 60 70 80

CN

T G

row

th H

eight

/ µ

m

Pressure / mbar

CNT Height vs Pressure

Silicon Mean Height Silicon Dioxide Mean Height

0

50

100

150

200

250

0 500 1000 1500 2000 2500 3000

CN

T G

row

th H

eight

/ 𝜇

m

Time at Temperature / Seconds

CNT Heights vs Time

Silicon Mean Height Silicon Dioxide Mean Height