grazing incidence small angle x-ray โ€ฆย ยท motivation 2 ๐ฟ= ๐œ† โ€ข interference between...

14
1 GRAZING INCIDENCE SMALL ANGLE X-RAY SCATTERING (GISAXS) AS A TOOL FOR CHARACTERIZATION AND OPTIMIZATION OF POLYMER NANOSTRUCTURES I. Martรญn-Fabiani 1 , E. Rebollar 2 , D.R. Rueda 1 , M.C. Garcรญa-Gutiรฉrrez 1 , S. Pรฉrez 2 , M. Castillejo 2 and T.A. Ezquerra 1 1 Instituto de Estructura de la Materia, IEM-CSIC, Madrid, Spain 2 Instituto de Quรญmica Fรญsica Rocasolano, IQFR-CSIC, Madrid, Spain

Upload: doandang

Post on 02-Oct-2018

219 views

Category:

Documents


0 download

TRANSCRIPT

1

GRAZING INCIDENCE SMALL ANGLE X-RAY

SCATTERING (GISAXS) AS A TOOL FOR

CHARACTERIZATION AND OPTIMIZATION OF

POLYMER NANOSTRUCTURES

I. Martรญn-Fabiani1, E. Rebollar2, D.R. Rueda1, M.C. Garcรญa-Gutiรฉrrez1, S.

Pรฉrez2, M. Castillejo2 and T.A. Ezquerra1

1 Instituto de Estructura de la Materia, IEM-CSIC, Madrid, Spain2 Instituto de Quรญmica Fรญsica Rocasolano, IQFR-CSIC, Madrid, Spain

Motivation

2

๐ฟ =๐œ†

๐‘› โˆ’ ๐‘ ๐‘’๐‘›๐œƒโ€ข Interference between incident and

reflected light generates ripples with

period L~ฮป

โ€ข It involves a feedback effect and thus

pulse repetition

Flexibility

POLYMERS

LIPSS Laser Induced Periodic Surface Structures

โ€ข High molecular weight (more

than 1000 atoms and up to

millions)

โ€ข Carbon-based

โ€ข Glass transition temperature (Tg)

Low cost

Durability

Light weight

GISAXS Grazing Incidence Small-Angle X-Ray Scattering

โ€ข Powerful synchrotron tool to characterize nanostructures

โ€ข Can we assess the structural order of LIPSS on polymer films?

โ€ข Is it possible to optimize LIPSS formation with laser parameters?

Bolle, M.; Lazare, S., Appl. Surf. Sci. 1993, 69 (1-4), 31-37 Csete, M.; Bor, Z., Appl. Surf. Sci. 1998, 133 (1-2), 5-16

(LETยดS SEE!!!)

3

Sample preparation

1 .Spin coating of polymer thin films on Si wafers

PTT

PC

PET2 . Repetitive laser irradiation

Nd:YAG laser in normal incidence

4th armonic (266 nm)

ฯ„ = 6ns ; f = 10 Hz

๐ฟ =๐œ†

๐‘› โˆ’ ๐‘ ๐‘’๐‘›๐œƒ=

๐œ†

๐‘›

L close to laser wavelength

Rebollar, E.; Perez, S.; Hernandez, J. J.; Martin-Fabiani, I.; Rueda, D. R.; Ezquerra, T. A.; Castillejo, M., Langmuir 2011, 27, 5596-5606.

Atomic Force Microscopy

(tapping mode)

Fluence dependence

(Energy of a single pulse over a

determined area integrated over time,

mJ/cm2)

Number of pulses dependence

Good absorbance

in the UV range!

3 . Characterization in real space

PTT/TFA solution 20 g/l150 nm thick

100 300 1200 6000

4 mJ/cm2 9 mJ/cm213 mJ/cm25 mJ/cm2

Dependence with number of pulses for a fixed fluence F = 7 mJ/cm2

Dependence with fluence for a fixed number of pulses (600)

Characterization in real space: Atomic Force Microscopy

Martin-Fabiani, I.; Rebollar, E.; Perez, S.; Rueda, D. R.; Garcia-Gutierrez, M. C.; Szymczyk, A.; Roslaniec, Z.; Castillejo, M.; Ezquerra, T. A., Langmuir 2012, 28 (20), 7938-7945.

โ€ข Period close to the wavelength

โ€ข Height increases with number of pulses

โ€ข There is a strong dependance of morphology with laser parameters

Is it possible to optimize

LIPSS formation with laser

parameters?

Grazing Incidence Small Angle X-ray Scattering (GISAXS)

5

Grazing Incidence Small Angle X-ray Scattering (GISAXS)

Correlations parallel to the

sample plane

๐‘ž๐‘ง =2๐œ‹

๐œ†๐‘ ๐‘’๐‘›๐›ผ๐‘– + ๐‘ ๐‘’๐‘›๐›ผ

๐‘ž๐‘ฆ =2๐œ‹

๐œ†๐‘ ๐‘’๐‘›๐œ”๐‘๐‘œ๐‘ ๐›ผ

Correlations perpendicular to

the sample plane โ€ข Allows characterizing submicrometric

films

โ€ข Reflection geometry is extremely

sensitive to surface features

โ€ข By changing the incidence angles

different depths within the sample can

be probed

DESY, Hamburg (Germany)

BW4 beamline (Doris ring)

ฮป = 0.14 nm

MARR CCD pixel size 79.1 x 79,1 ยตm2

ฮฑi โ‰ˆ 0.4โฐ

Muller-Buschbaum, P., Analytical and Bioanalytical Chemistry 2003, 376 (1), 3-10

GISAXS modelling

6

LL+ฮ”L1 L

L-ฮ”L2

โ€ข The probability of finding the next

box at a distance L is determined

by a Gaussian function

๐‘ ๐‘ฅ =1

๐œŽ 2๐œ‹๐‘’๐‘ฅ๐‘ โˆ’

(๐‘ฅ โˆ’ ๐ฟ)2

2๐œŽ2

Hosemann, R., Zeitschrift Fur Physik 1950, 128, 465-492 Lazzari, R., Journal of Applied Crystallography 2002, 35, 406-421

Paracrystalline lattice

IsGISAXS software โ€“ Freeware

http://ln-www.insp.upmc.fr/axe4/Oxydes/IsGISAXS/isgisaxs.htm

โ€ข Central geometrical parameters

determined by AFM, assuming

a variation

๐œŽ๐‘…

๐‘…~

๐œŽ๐ป

๐ป~0.1

๐‘” = ๐œŽ/๐ฟ

โ€ข Paracrystalline distortion parameter

๐‘” = 0 Crystalline lattice

๐‘” โ†’ โˆž Disordered system

Local monodisperse aproximation (LMA) (monodisperse domains that interfere incoherently

between them)

๐‘‘ฮฃ

๐‘‘ฮฉ ๐‘ž =< ๐น 2> ๐‘† ๐‘ž ฮฑ ๐ผ๐‘ ๐‘๐‘Ž๐‘ก๐‘ก๐‘’๐‘Ÿ๐‘’๐‘‘

Distorted Wave Born Approximation (DWBA)(4 contributions to the form factor)

Characterization in reciprocal space: number of pulses dependence

Dependence with number of pulses for a fixed fluence F = 7 mJ/cm2

AFM

100

Modelling

300

6000

300

6000

100

GISAXS

100

300

6000

Cut at ฮฑ = 0.2 โฐ

8

Characterization in reciprocal space: number of pulses dependence

Optimum

LIPSS formation

๐‘” = ๐œŽ/๐ฟ

Paracrystalline distortion

parameter

๐‘” = 0 Crystalline lattice

๐‘” โ†’ โˆž Disordered system

โ€ข LIPSS generated by ns laser pulses can be described as paracrystalline 1D lattices

โ€ข Optimum value of the number of pulses for a fixed frequency!

โ€ข GISAXS and AFM information are in agreement and complement each other

9 mJ/cm2

13 mJ/cm2

9 mJ/cm2

13 mJ/cm2

Characterization in reciprocal space: fluence dependence

AFM

5 mJ/cm2

GISAXS

5 mJ/cm2

Modelling

5 mJ/cm2

9 mJ/cm2

13 mJ/cm2

Dependence with fluence for a fixed number of pulses (600)

Cut at ฮฑ = 0.2 โฐ

10

Characterization in reciprocal space: fluence dependence

โ€ข Structural order of LIPSS improves with increasing fluency!

โ€ข GISAXS and AFM information are in agreement and complement each other

11

LIPSS formation using ultrashort (femtosecond) pulses

LIPSS induced by femtosecond (fs = 10 -15) pulses in polymers

- scarcely reported in the literature

- formation mechanisms different

from the ns regime

Ti : sapphire laser in normal incidence

4th harmonic (ฮป = 265 nm)

ฯ„ = 120 fs ; f = 1 Hz

1.1 mJ/cm2 1.3 mJ/cm2 1.6 mJ/cm2

Dependence with fluence for a fixed number of pulses (5000)

Rebollar, E.; de Aldana, J. R. V.; Perez-Hernandez, J. A.; Ezquerra, T. A.; Moreno, P.; Castillejo, M., Appl. Phys. Lett. 2012, 100

โ€ข Period close to the wavelength

โ€ข Height increases with fluency

โ€ข There is a strong dependance of morphology with laser parameters

1.51 mJ/cm2

1.65 mJ/cm2

1.51 mJ/cm2

1.39 mJ/cm2

LIPSS formation using ultrashort (femtosecond) pulses

Rebollar, E.; Vazquez de Aldana, J. R.; Martin-Fabiani, I.; Hernandez, M.; Rueda, D. R.; Ezquerra, T. A.; Domingo, C.; Moreno, P.; Castillejo, M., Phys. Chem. Chem. Phys. 2013, 15 (27), 11287-11298

Dependence with fluence for a fixed number of pulses (5000)

-0.3 0.0 0.3

Experimental

Modelado

I/I 0

Cut at ฮฑ = 0.2โฐ 1.65 mJ/cm2

-0.3 0.0 0.3

Experimental

Modelado

I/I 0

1.39 mJ/cm2

-0.3 0.0 0.3

Experimental

Modelado

I/I 0

LIPSS generated by ns laser

pulses can be described as

paracrystalline 1D lattices

Optimum value of fluency for a

fixed frequency!

JIP 2013

, 26-30 Mayo, 2013 13

Conclusions

โ€ข LIPSS on polymer thin films have been fabricated

by irradiation with nano and femtosecond laser

pulses varying laser parameters: fluence and

number of pulses

โ€ข Morphological characterization (AFM) is in

agreement with the structural characterization

(GISAXS) , and both techniques complement

each other

โ€ข The as-fabricated structures can be considered 1D

paracrystalline lattices

โ€ข It is possible to correlate the degree of structural

order of the patterned samples with the

irradiation parameters and achieve control over

formation of these nanostructures.

CONCLUSIONS

JIP 2013

, 26-30 May, 2013 14

Thanks for your attention!

Soft and Polymeric Matter grouphttp://www.iem.cfmac.csic.es/fmacro/softmatpol/