GraphAne: From Synthesis to Applications

H. Sahin,1, ∗ O. Leenaerts,1, † S. K. Singh,1, ‡ and F. M. Peeters1, §

1Department of Physics, University of Antwerp, 2610 Antwerp, Belgium(Dated: February 23, 2015)

Atomically thin crystals have recently been the focus of attention in particular after the synthesisof graphene, a monolayer hexagonal crystal structure of carbon. In this novel material class thechemically derived graphenes have attracted tremendous interest. It was shown that althoughbulk graphite is a chemically inert material, the surface of single layer graphene is rather reactiveagainst individual atoms. So far, synthesis of several graphene derivatives have been reportedsuch as hydrogenated graphene ”graphane” (CH), fluorographene (CF) and chlorographene (CCl).Moreover, the stability of bromine and iodine covered graphene were predicted using computationaltools. Among these derivatives, easy synthesis, insulating electronic behavior and reversibly tunablecrystal structure of graphane make this material special for future ultra-thin device applications.This overview, surveys structural, electronic, magnetic, vibrational and mechanical properties ofgraphane. We also present a detailed overview of research efforts devoted to the computationalmodeling of graphane and its derivatives. Furthermore recent progress in synthesis techniques andpossible applications of graphane are reviewed as well.

PACS numbers: 81.05.ue, 85.12.de, 68.47.Fg, 68.43.Bc, 68.43.Fg

I. INTRODUCTION

During the last decade, the field of materials sciencehas been expanded with the advent of few-atom-thicktwo-dimensional materials. Previously, the majority ofresearch was devoted to three-dimensional bulk crystalsbecause these are easier to handle in experiment andin theoretical simulations. The ever increasing trend tominiaturization in the last decades has been accompa-nied with the production of low-dimensional nanomate-rials in all but two dimensions. The accepted theoreticalimpossibility of such 2D materials has probably been thelargest obstacle for their fabrication. 2D systems, such aselectron gases, have been known for quite some time, butthey usually appear at the surface or interface of 3D ma-terials. In material science, the dimensionality of a ma-terial is not a strictly defined quantity, but it is commonto refer to few-atom-thick layers as 2D. In that sense, 2Dmaterials have only come to the center of attention withthe isolation and characterization of graphene in 2004.1,2

The production of graphene was originally achievedwith the now famous scotch-tape method. Starting froma highly-ordered pyrolytic graphite sample, few-layergraphene samples are isolated by repeated peeling withan adhesive tape, and subsequent deposition on a sub-strate (usually silicon dioxide). Nowadays, many differ-ent techniques have been developed to produce graphenefrom other (3D) crystals such as silicon carbide or usingbottom-up approaches.

Graphene is a unique material in many ways. It isthe thinnest imaginable crystal but, at the same time, itis the strongest,3 stiffest, and best conducting material4

known. Furthermore, it has an intriguing electronic spec-trum that mimics that of massless Dirac particles, lead-ing to many fascinating phenomena such as an anoma-lous integer quantum Hall effect and Klein tunneling.The absence of a band gap in the electronic spectrum

of graphene can also be considered as an annoying fea-ture that prohibits the direct implementation of graphenein electronics. Therefore, a large part of the research ongraphene has been devoted to the creation of an elec-tronic band gap. This can be achieved in many ways:(i) through a reduction of the dimensionality by cuttinggraphene into ribbons or flakes, (ii) by periodic poten-tials or substrates that break the sublattice symmetry,or (iii) by the destruction of the π-bond network throughfunctionalization.

Functionalization of graphene can be achieved in dif-ferent ways. It is possible to substitute some C atomsin the graphene layer by foreign atoms such as B and N.In this way charge doping can be obtained and a smallband gap can be opened. Another way of functionaliza-tion is through the adsorption of atoms or molecules. De-pending on the adsorption strength, one can distinguishbetween physisorption and chemisorption. Physisorptionleaves the graphene structure virtually unaltered, but caninduce some subtle electronic changes such as charge dop-ing. Chemisorption, on the other hand, is accompaniedby strong covalent bonds between the graphene C atomsand the adsorbate. These covalent bonds disrupt the aro-matic network in graphene and causes strong structuralchanges. The adsorbates that can cause these kind ofchanges are usually radicals such as hydroxyl groups oratomic species. When the coverage of chemisorbed ad-sorbates is dense enough, the properties of graphene canchange drastically, as in the case of oxygenation.5,6 A (re-versible) metal to insulator transition is predicted uponcovalent functionalization.7

Depending on the type of adsorbate the functional-ized graphene can exhibit crystalline or amorphous char-acter. The former is expected for hydrogenation andfluorination while the latter has been observed for oxy-genated graphene (graphene oxide). The distinction be-tween crystalline and amorphous is not always clear and

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TABLE I: The relative stability of various graphane isomers with respect to the chair isomer as found in the literature. Thetotal energies, calculated for per unitcell, are given in eV.

Sluiter Sofo Samarakoon Leenaerts Artyukhov Wen Samarakoon Bhattacharya He

Ref. 13 Ref. 14 Ref. 15 Ref. 16 Ref. 17 Ref. 18 Ref. 22 Ref. 23 Ref. 24

chair 0.000 0.00 0.00 0.000 0.000 0.00 0.00 0.00 0.000

boat 0.103 0.12 0.17 0.103 0.103 0.10 0.09 0.10 0.102

stirrup 0.056 - - 0.053 0.055 0.05 0.05 0.04 0.056

armchair - - - 0.128 - 0.13 - - 0.134

TB-chair - - 0.25 - - 0.19 - - -

twist-boat - - - - - - 0.16 - 0.150

tricycle - - - - - - - - 0.024

can depend on the level of coverage. Furthermore it isexpected that island formation occurs,8 which makes thedistinction even more troublesome.

The chemical functionalization of graphitic materialshas a longer experimental and theoretical history thatdates back from before the isolation of graphene. Fluori-nated graphite and fluorinated graphene have been thor-oughly studied9–12 and much of the obtained knowledgecan be transferred to the case of hydrogenated graphene.

II. PROPERTIES OF GRAPHANE

Graphane is the name given to a class of hydrogenatedgraphene structures that are close to full coverage. Ide-ally, every carbon atom of the graphene layer is cova-lently bonded to a hydrogen atom. These C-H bondscan only exist if the C atoms in graphene change theirhybridization from sp2 to sp3 and, as a consequence, thegraphene layer becomes buckled. There is no unique wayto couple every C to a H atom because the H atoms canattach to the graphene layer from above or below. In fact,there is also no a priori reason why this should be donein an ordered fashion, but to keep calculations and in-terpretations simple, one usually supposes the graphanestructure to be crystalline. It is assumed that the Hatoms are chemisorbed according to some simple patternand during the last decade, many different patterns havebeen suggested. These are usually referred to as the dif-ferent conformations, configurations, or (stereo) isomersof graphane. Note that the different CH structures areactually not conformers because they are not related bymere bond rotations. In this section, we take a closerlook at the structure and physical properties of the dif-ferent graphane isomers. We review their electronic, vi-brational, and optical properties and comment on theirrelative stability.

A. Atomic Structure

In Fig. 1, we show the schematic structure of the threebest-known and most stable graphane isomers, namely

FIG. 1: Five isomers of graphane in which every C atom isequivalent. Blue and red colors indicate H adsorption, respec-tively, above and below the graphene layer.

the chair, stirrup, and boat configuration, together withtwo other isomers. The former three structures have al-ready been proposed in 2003, i.e. before the isolation ofgraphene,1 by Sluiter and Kawazoe.13 However, it tookuntil 2007, when Sofo et al. rediscovered14 the chairand boat configurations, that graphane acquired wide-spread attention from the graphene community. Sincethen, more structures have been proposed such as thetwist-boat ,22 twist-boat-chair ,15 armchair ,16 tricycle,24

and many others, but they are all considerably less sta-ble than the known configurations (except for the tricy-cle configuration which is actually a combination of chairand stirrup) and are therefore of minor importance. Intable I, we compare the calculated stability of differentgraphane configurations that can be found in the litera-ture. All computational studies agree that the chair con-figuration is the most stable one. In this configuration theH atoms are alternately adsorbed above and below thegraphene sheet so that all the C atoms of one sublatticemove up while those of the other sublattice move down(see Fig. 2 (a)). Although less common in the literature,the stirrup configuration (also called washboard, or zigzagconfiguration), is more stable than the so-called boat con-

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FIG. 2: (a) Crystal structure of graphane in chair configura-tion from Ref. 14. (b) Band structure of graphane from Ref.16.

figuration. The stirrup isomer, schematically shown atthe bottom left of Fig. 1, consist of alternating zigzagchains with H atoms pointing up and down. The reasonthat this graphane isomer is less well-known is probablythe fact that the important paper of Sofo et al.14 consid-ered the boat configuration, but not the stirrup one.

In discussing the dependence of the properties on thetype of conformation, we take the four isomers discussedby Leenaerts et al.16 as characteristic examples. Wen etal. showed that these isomers are dynamically more sta-ble than benzene molecules.18 The data for the structureof these graphane isomers are given in Table II.

TABLE II: Structure parameters for the different graphaneisomers. Distances are given in Å and angles in degrees. Thedistance between neighboring C atoms, dcc, and the angles,θccx, are averaged over the supercell.

chair boat strirrup armchair

ax/√

3 2.539 2.480 2.203 2.483

ay/ny 2.539 2.520 2.540 2.270

dch 1.104 1.099 1.099 1.096

dcc 1.536 1.543 1.539 1.546

θcch 107.4 107.0 106.8 106.7

θccc 111.5 111.8 112.0 112.1

The length of the C-H bonds is about 1.10 Å whichis typical for such bonds as found in organic chemistry.The average length of the C-C bonds is close to the idealsingle C-C bonds in diamond. Since there is no stericstrain in the chair configuration, because all bonds andangles are completely free to relax, the bond lengths andangles can be considered ideal in that case. Deviationsfrom this ideal situation are found in the other configu-rations which indicate the presence of local strain. Someof the isomers contain substantial structural anisotropieswhich are translated into their electronic and mechanicalproperties (see below).

FIG. 3: The total and projected density of states of graphane.From Ref. 25.

B. Electronic Structure

Graphane is a semiconducting material with a substan-tial direct electronic band gap (see Fig. 2(b)). The sizeof the gap depends on the method of calculation: withinDFT the gap is about 3.5 eV for LDA and GGA, and 4.4eV with a hybrid functional (HSE06).20 The hybrid func-tional (HSE)19,20 overcomes some deficiencies of the con-ventional approximations for the exchange-correlation(xc) functional within DFT, i.e. LDA or GGA. Thelater include an unphysical interaction of the electronwith itself, the so-called self- interaction, yielding a sys-tematic underbinding of strongly localized states. HSEpartly corrects for this spurious self-interaction by inter-mixing a fraction of Hartree-Fock exchange. This leadsto an improvement of the structural (equilibrium latticeconstants, bulk moduli), thermochemical (cohesive ener-gies, heats of formation), and electronic properties (bandgaps) of semiconductors and insulators.21 Still higheraccuracy on the electronic band gap can be achievedby including many-body interactions (GW approxima-tion). Such many-body interactions increase the elec-tronic band gap of graphane further to about 5.2 eV.16,25

The band gap is almost independent of the configura-tion and varies with less than 5%.16 The total and pro-jected density of states (DOS) of graphane in the chairconfiguration is shown in Fig. 3. The electronic gap isclearly recognizable in the total DOS, but the projectedDOS shows some peculiar characteristics. The electronicstates below the gap are localized on the C atoms but thecontribution of C and H atoms to the conduction bandstates is negligible.

This is even more clear when considering the density ofthe single-particle states at the valence band maximum(VBM) and conduction band minimum (CBM), as shownif Fig. 4. The VBM and CBM have very different char-acter and symmetry. The valence band states consist ofC px and py orbitals, but the conduction band states ex-hibit plane-wave character. The CBM state behaves asa delocalized electron that is loosely bound above the H

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atoms.26

FIG. 4: Top and side views of the VBM (left) and CBM(right) states of graphane. From Ref. 26.

C. Optical properties

FIG. 5: (Color online) (left) The excitonic spectrum of boundstates in graphane from Ref.28. (right) The imaginary partof the dielectric function of graphane calculated within DFT(DFT+RPA), with e-e interactions (G0W0+RPA), and withe-e and e-h interaction (G0W0+BSE) from Ref. 29.

The two-dimensional nature of graphane has a signif-icant impact on its optical properties and reduces theoptical band gap significantly. The reduced screeningin two-dimensional materials leads to large electron-holeinteraction.27 As a consequence, there are bound exci-ton states considerably below the conduction band mini-mum. For graphane the exciton binding energy has beencalculated to be 1.6 eV28 which produces an optical gapof about 3.8 eV.27,29,30 A more complete exciton spec-trum is shown in Fig. 5(left). The increase of the elec-tronic band gap due to electron-electron interactions, isalmost completely canceled by the electron-hole inter-action. This is nicely illustrated in Fig. 5(right) whichshows the absorption spectra (imaginary part of the di-electric function) at 3 different levels of approximation:(i) without e-e and e-h interaction, (ii) with e-e but

no e-h interaction, and (iii) with e-e and e-h interac-tion. Single-particle calculations (DFT) lead to similarband gaps as calculations with e-e and e-h interaction(G0W0+BSE).

In experiments, one usually estimates the band gapfrom optical absorption measurements. This kind of mea-surements actually measures the optical band gap andnot the electronic band gap. Therefore, one should takecare to compare experimental results with the appropri-ate theoretical calculations.

D. Magnetic properties

Fully hydrogenated graphene contains only sp3 hy-bridized C atoms with 4 bonding partners (3 C and 1 H).Therefore, the ideal graphane isomers are not expectedto show any interesting magnetic properties. Magnetismonly occurs at defect sites (missing H atoms)31,32 and inpartially hydrogenated graphene. We discuss this in moredetail below. Substitutional defects such as B atoms, canalso lead to a magnetic response in graphane.33

Another important effect of hydrogenation of grapheneis the enormous increase in spin-orbit coupling.34,35 Thechange in hybridization from sp2 to sp3 enhances thespin-orbit by two orders of magnitude. Atomic spin-orbitcoupling in graphene is a very weak second order process,but H adsorption can turn this into a first-order process.The spin-orbit coupling in graphene becomes of the orderof the atomic spin-orbit coupling (∆atSO ≈ 10 meV) andis comparable to that of diamond.34

E. Vibrational properties

In Fig. 6 the phonon spectrum of graphane in the chairconfiguration is shown. The absence of imaginary fre-quencies indicates that this graphane isomer is stable.The phonon modes of graphane can be divided into low,intermediate, and high-frequency groups of phonons.36

From the projected phonon DOS, the high-frequencymodes are identified as dominantly H modes, as canbe expected from the CH stretching modes. The low-lying (acoustic) modes are dominantly C modes whilethe intermediate-frequency group of phonons have con-tributions from both types of atoms.

Savini et al. showed that upon hole doping, a giantKohn anomaly arises in the intermediate-frequency (op-tical) phonon spectrum of graphane.37 This phenomenonwas predicted to turn graphane into an electron-phononsuperconductor with a critical temperature above 90 K.This is a consequence of the unique strength of the chem-ical bonds between the carbon atoms and the large den-sity of electronic states at the Fermi energy due to thereduced dimensionality of graphane.

In addition the presence and characteristic propertiesof discrete breathers (DBs) which are spatially localized,

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FIG. 6: Phonon dispersion of graphane in the chair configu-ration. The dots are the directly calculated frequencies andthe lines are interpolated values. The inset shows the firstBrillouin zone and the wavevector path used. The right-handside shows the phonon DOS.

large-amplitude vibrational modes in defect-free nonlin-ear lattices was investigated by Chechin et al.38 It isfound that DB frequency decreases with increase in itsamplitude, and it can take any value within the phonongap and can even enter the low-frequency phonon band.

F. Mechanical properties

Graphene is the strongest material ever measuredand it has also a remarkable stiffness. Hydrogena-tion reduces the strength of graphene because thestrong aromatic bond network is replaced with single σbonds. The 2D Young’s modulus of graphane has beencalculated16,39,40 to be around 245 Nm−1 which is sub-stantially smaller than the calculated16,39 and experi-mental value3,41 for graphene 340 Nm−1. Experimen-tal values for the Young’s modulus of graphane are notavailable at present, but they are expected to be lowerthan the theoretical value due to the presence of defects.This is comparable to the case of fluorinated graphenewhere the theoretical estimate is about twice the experi-mental value.16,42 Other isomers of graphane such as theboat and stirrup configurations exhibit highly anisotropicbehavior.16,43 The Young’s modulus can decrease to halfits value in particular directions and also the Poisson ra-tios are very anisotropic.43

Perfect graphane behaves elastically under strains upto at least 30%, but small defects can drastically re-duce this limit.39 For larger strains, graphane shows irre-versible changes and defects start to appear. The out-of-plane stifness of graphane is also somewhat smaller thanthat of graphene, leading to a higher surface roughness

FIG. 7: (Color online) Changes in Raman spectra ofgraphene caused by hydrogenation. The spectra are normal-ized to have a similar intensity of the G peak. (a) Grapheneon SiO2. (b) Free-standing graphene. Red, blue, and greencurves (top to bottom) correspond to pristine, hydrogenated,and annealed samples, respectively. Reproduced with permis-sion from ref.46. Copyright 2009 The American Associationfor the Advancement of Science.

and thermal contraction.44

Thermal fluctuations of single layer graphane were in-vestigated by Costamagna et al.45 up to temperaturesof at least 900 K. By analyzing the mean square valueof the height fluctuations and the height-height correla-tion function for different system sizes and temperatures,they showed that graphane was an unrippled system incontrast to graphene where later follows the membranetheory. This unexpected behavior persists and is a con-sequence of the fact that in graphane the thermal energycan be accommodated by in-plane bending modes, i.e.,modes involving C-C-C bond angles in the buckled car-bon layer, instead of leading to significant out-of-planefluctuations that occur in graphene.

III. SYNTHESIS

Elias et al.46 reported the experimental fabrication ofgraphane in 2009. Graphene samples were extracted us-ing micromechanical cleavage of graphite. These sampleswere either deposited on top of an oxidized Si substrateor used as free-standing membranes for transmission elec-tron microscopy (TEM). The samples were first heated athigh temperature to remove all possible contamination.Cold hydrogen plasma at pressure 0.1 mbar hydrogen-argon mixture (10% H2) was used for 2 hours to exposegraphene samples.

Raman spectroscopy is an effective tool to see thechanges induced by hydrogenated graphene. Fig. 7 ex-hibits the evolution of Raman spectra for graphene, hy-drogenated and annealed graphene samples. Hydrogena-tion also results in sharp D (1342 cm−1) and D′ (∼1610

6

cm−1) peaks and combination of both D+D′ peak around2950 cm−1 as compared with disordered and nanostruc-tured carbon-based materials. The D peak in graphaneappeared due to the breaking of the translational sym-metry of the C-C sp2 bonds after the formation of theC-H sp3 bonds. The D peak for both side hydrogenatedgraphene is twice larger than single sided hydrogenatedgraphene, due to the formation of twice C-H bonds.

The metallic character of graphene from graphane canbe recovered by annealing graphane in Ar atmosphereat 450 ◦C for 24 hours as shown in Fig. 7. Higher an-nealing temperature may damage the sample by intro-ducing structural disorder which broaden the intensityof the bands indicating that the annealed graphene be-comes hole-doped. All the defect related peaks (D, D′,and D+D′) were strongly suppressed.

Wojtaszek et al.47 created hydrogenated single and bi-layer graphene by an Ar-H2 plasma produced in a reac-tive ion etching (RIE) system. They showed that thechosen plasma conditions can prevent damage to thegraphene sheet. The reported hydrogenation was 0.05%which can be further improved. The hydrogenation oc-curs due to the hydrogen ions from the plasma and notdue to the fragmentation of water adsorbates on thegraphene surface by highly accelerated plasma electrons.

Poh et al.48 studied the production of partially hydro-genated graphene using thermal exfoliation of graphiteoxide in H2 atmosphere under high pressure (60-150 bar)and temperature (200-500 ◦C). They found that a H2pressure of 100 bar at 500 ◦C was the most efficient reac-tion condition. This method does not require a plasmasource (in contrast to previous work)46 and thus, a largeamount of hydrogenated graphene can be produced.

Guisinger et al.49 used room temperature STM to in-vestigate the atomic hydrogen passivation of danglingbonds at the interface between single layer graphene andsilicon-terminated SiC which can strongly influence theelectronic properties of the graphene overlayer. Since hy-drogen did not diffuse through the graphene monolayersuggesting that the edge of graphene is chemically boundto the reconstructed SiC(0001) surface.

Luo et al.50 showed that the hydrogenation of graphenelayers by hydrogen plasma is reversible, even at its sat-urated hydrogen coverage. The hydrogen coverage de-pends on various parameters such as plasma power andprocess duration. The hydrogenation rate of graphenelayers is controlled by the hydrogenation energy barriers,which show a clear dependence on the number of lay-ers. It is demonstrated, using Raman spectroscopy, thatthe hydrogenation of bilayer and multilayer graphene ismuch more feasible than that of single layer graphene onSiO2/Si substrate. The dehydrogenation also shows sig-nificant dependence on the numbers of graphene layersand the amount of hydrogen coverage.

Wang et al.51 reported a new route to prepare highquality, monolayer graphene by dehydrogenation of agraphane-like film grown by plasma-enhanced chemicalvapor deposition. The advantage of the plasma deposi-

tion process is its compatibility with wafer scale process-ing and lithographical patterning as well as deposition onmetal-coated silicon substrates at temperature (at least350 ◦C) lower than that used in thermal CVD processes.Using laser writing, graphane-like ribbons and squarescan be formed which is a step towards to design of anintegrated circuit based on all-carbon electronics.

Jones et al.52 have synthesized partially hydrogenatedgraphene on both sides and on single side of graphene byelectron irradiation of graphene having chemisorbed H2Oand NH3 on the layer. Hydrogenation was proposed dueto H+ ions and H radicals resulting from the fragmenta-tion of H2O and NH3 adsorbates by backscattered andsecondary electrons.

Ryu et al.53 realized hydrogenation of graphene byelectron-induced dissociation of hydrogen silsesquioxane(HSQ). Hydrogenation occurred at a higher rate for sin-gle than for double layers due to the enhanced chemicalreactivity of a single sheet of graphene. The probabilityof chemisorption of hydrogen atoms on single layers is atleast 0.03 at room temperature which is 15 times largerthan for that for bilayers.

Theoretically, many authors proposed different ap-proaches for the hydrogenation graphene.

Using density functional theory, Zhou et al.54,55 pro-posed semi-hydrogenated graphene by applying an exter-nal electric field to a fully hydrogenated graphene whichcan remove H atoms from one side of graphane. Semi-hydrogenated graphene, also known as ”graphone” is aferromagnetic semiconductor with an indirect band gapof 0.43 eV. But it was shown that free-standing graphonewill roll up.56 In addition, Ao et al.59 showed that hydro-genation of graphene layers is easier when an electric fieldthat acts as a catalisor for dissociative adsorption of H2,is applied.

Leenaerts et al.60 performed ab initio density-functional theory calculations to investigate the processof hydrogenation of a bilayer of graphene. 50% hydro-gen coverage is possible in case that the hydrogen atomsare allowed to adsorb on both sides of the bilayer. Inthis case, the weak van der Walls forces between thegraphene layers are replaced by strong interlayer chemi-cal bonds. At maximum coverage, a bilayer of graphaneis formed which has similar electronic properties to thoseof a single layer of graphane due to the same hybridiza-tion. Such a bilayer can be viewed as the thinnest layerof diamond which was recently realized experimentally.61

Samarakoon et al.62 studied the electronic properties ofhydrogenated bilayer graphene by applying a perpendic-ular electric bias using DFT calculations which leadsto a transition from semiconducting to metallic state.Also, desorption of hydrogen from one layer in bilayergraphane yields a ferromagnetic semiconductor with atunable band gap.

Balog et al.8 demonstrated that a bandgap can beopened in graphene by inducing patterned hydrogenchemisorption onto the Moiré superlattice positions ofgraphene grown on an Ir(111) substrate. Combined STM

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and ARPES results demonstrated that the observed hy-drogen adsorbate structures were stable well above roomtemperature. The band gap was not very sensitive tothe exact hydrogen adsorbate structure. These experi-mental results also support the concept of confinement-induced gap opening by periodic lattice perturbations.The gap was induced at the Fermi energy and was ofsufficient size, such that it can be used for electronic ap-plications at room temperature. Balog et al.63 presentedSTM studies to reveal the local adsorbate structure ofatomic hydrogen on the basal plane of graphene on a SiCsubstrate. Four types of configurations were formed byhydrogen pairs after exposing to a 1600 K D-atom beam.At low coverage the formation of hydrogen dimers oc-curred, while at higher coverage random adsorption intolarger hydrogen clusters was observed. They also foundthat the tunneling current of the STM tip can inducehydrogen desorption, which implies that the hydrogenatom is weakly bound to the graphene surface. The hy-drogenation was reversible by annealing the substrate to800 ◦C. The adsorption of atomic hydrogen onto the de-sired areas on the surface and to form nanopatterns viatip-induced desorption of hydrogen, opens the possibilityof electronic and chemical functionalization of graphenesurfaces via hydrogenation. Haberer et al.64 observedby angle-resolved photoemission spectroscopy that a gapcan be opened up to 1.0 eV for a hydrogen coverage of 8percent of graphene on Au.

IV. ENGINEERING THE PROPERTIES OFGRAPHANE

Controlling the electronic property of a material is es-sential in device technology. Monolayer materials, withtheir reduced dimensionality, provide a suitable play-ground for the modification of the characteristic prop-erties of materials at atomic scale. In order to control ormodify the properties of graphane, which is a nonmag-netic semiconductor, one can suggest several techniquessuch formation of graphanes with different stoichiometry,creating various vacancies, doping with foreign atoms,application of strain and dimensional reduction.

A. Graphanes with Various C/H Ratios

If the adsorption of H atoms is only allowed at one sideof the graphene layer, some interesting theoretical mate-rials can be formed. Hydrogenation of a single sublat-tice gives rise to a ferromagnetic material that was calledgraphone.54 The stability of graphone is very weak56,65,66

because the H atoms try to form pairs. Its practical use istherefore rather questionable. In addition, some studiessuch as controlled H-domain formation on Ir(111) sup-ported graphene,57 excitation-induced hydrogen dissoci-ation from the graphane surface58 were already reportedby experimental groups.

A more promising case of single-side adsorption is C4H.This structure is built from H pairs in the very stable paraconfiguration in which atoms are adsorbed on opposite Catoms in the graphene hexagons. When this structure isrepeated, a 2×2 superstructure arises which is very stable(see Fig. 8).67 In 2011, this 2D C4H crystal was synthe-sized by Haberer et al.67 on a Au substrate. Hydrogenplasmas were used to hydrogenate the graphene sampleto a H/C ratio of 1:4. DFT calculations show that theresulting material contains an electronic band gap of 3.5eV which is similar to graphane.67,68

FIG. 8: Top and side view of the C4H crystal structure. FromRef. 67.

It is also possible to hydrogenate multilayer graphene.This can be done in two different ways. First, the lay-ers can all be completely hydrogenated to form stackedsequences of e.g. chair isomers, and second, only thetop and bottom layer are hydrogenated from one side,resulting in a thin diamond films.

In addition, Fokin et al. studied the effect of σ-σand π-π interactions in the electronic properties of sin-gle layer and multilayer [n]graphanes at the dispersion-corrected density functional theory (DFT) level.69 It wasfound that graphanes show quantum confinement effectsas the HOMO-LUMO gaps decrease from small to largegraphane structures, asymptotically approaching 5.4 eVpreviously obtained for bulk graphane. Similarly, Alonsoet al. investigated the nature and origin of dispersioninteractions for the benzene and cyclohexane dimers byusing dispersion-corrected density functional theory, en-ergy decomposition analysis, and the noncovalent inter-action (NCI) method. Their NCI analysis revealed thatthe dispersion interactions between the hydrogen atomsare responsible for the surprisingly strong aliphatic inter-actions.

Completely hydrogenated graphene layers can bestacked to form multilayered systems or 3D crystals.The H atoms of the different layers have a repulsive effectwhich causes the layers to align in such a way that theH atoms of one layer do not overlap with the H atomsof the neighboring graphane layer. The most stablemultilayered graphane system is built from AA-stackedchair isomers.18,71 However, under pressure, othergraphane configurations can become more favorable asbuilding blocks for 3D graphane crystals. Wen et al.

8

calculated that for pressures above 10 GPa, the stirrupisomer becomes more stable due to a more efficientinterlayer H arrangement.18 Pressure was also shown toincrease the electronic band gap up to 20 GPa.18

FIG. 9: Top and side view of bilayer diamane structure. FromRef. 60

When the hydrogenation process of few-layer graphene(FLG) is restricted in such a way that only the outer lay-ers are exposed to H atoms, it is possible to turn FLG inthin diamond films. Such films have been dubbed ’dia-mane’. Hydrogen adsorption on the top layer changesthe hybridization of the interacting C atoms to sp3, butalso the neighboring C atoms will undergo a substantialhybridization change.60 When the H coverage is largeenough, it becomes favorable for the non-hydrogenatedC atoms in the outer layers to form covalent bonds withthe underlying layers (see Fig. 9).60 The formation ofinterlayer C-C bonds is easiest achieved in AA or ABC-stacked graphene layers,72–74 but has also been theoret-ically predicted for twisted graphene bilayers.75 In ad-dition, Mapasha et al. investigated hydrogenation of bi-layer graphene using GGA-PBE functional and four vari-ants of non-local van der Waals density functionals vdW-DF, vdW-DF2, vdW-DF-C09x, and vdW-DF2-C09x.76

For ordered FLG slabs the process can be continueduntil all C atoms in the system have sp3 hybridization.In this ways the hydrogenation process can turn FLGinto a thin diamond film,72–74 as has been experimentallyconfirmed.61 The band gap of diamane decreases with thenumber of layers74,77 and does not converge to the bandgap of bulk diamond. The reason for this is that thesize of the band gap is determined by the position ofthe CBM which corresponds to a surface state (see Fig.4). As predicted by Samarakoon et al., the band gap ofbilayer diamane can also be tuned by the application ofan electric field. The gap decreases monotonically withincreasing field strength and a semiconductor to metaltransition is observed at 1.05 V/Å.62

B. Vacancy Formation

As it was shown before even the strong covalent bondsof graphene can be broken and various vacancies areformed due to e.g. continuous exposure to the high-energy electron beam78 or irradiation with low-energyAr+.79 Moreover, the fabrication of large graphene sheets

FIG. 10: Magnetic properties of graphane with various defectscreated by removing H atoms and C-H pairs (from Ref. 82).

having a high-density of nanoscale holes or multiple car-bon vacancies is another landmark in controlling the elec-tronic properties of graphene.80,81 Therefore, motivatedby these recent advances, controllable modification of theelectronic properties of graphane, that has weaker cova-lent bonds as compared to graphene, can be utilized fordifferent applications.

As was shown by Sahin et al.,31 desorption of a singleH atom from the surface of graphane requires 4.79 eVenergy per atom. Formation of each H-vacancy leavesa half-filled sp3-like orbital on the graphane surface andtherefore the bandgap is reduced by the defect states thatappear around the Fermi level. Here it is worth to notethat each single H-vacancy creates a local magnetic mo-ment of 1 µB . As shown in Fig. 10, one can obtain largespin polarizations by creating triangular-shaped H-freeregions on graphane. In addition, as long as the num-ber of freed H atoms (C-H pairs) from A and B sublat-tice is the same there is no net magnetic moment in theground state of the structure. Ferromagnetic domainswith large net magnetic moments on graphane are use-ful for future data storage and spintronics applications.Likewise, Moaied et al.83 reported that hydrogenation ofsingle and multilayer graphene surfaces may result in aferromagnetic state. It was also predicted that the Curietemperature strongly depends on the size of the hydro-genated region. Similarly, a recent study by Walter et al.showed that created vacancy domains on fluorographene,which is the fluorinated counterpart of graphane, possessa band gap which was reduced by midgap states result-ing in a blue light emitting ground state which is not thecase for defect-free material.84

Creation of one-dimensional graphene/graphane su-perlattices with a tunable electronic bandgap can also berealized by selective desorption of H atoms. Hernandez-Nieves et al.85 predicted, using ab initio calculations,that one-dimensional H-free regions serve as freestand-ing graphene nanoribbons, and their magnetic ground

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state can be tuned via particular arrangements of theH atoms at the edges. In recent work of Ray et al.,spintronics applications of the graphene supported gra-phone/graphane bilayer structure was investigated ex-perimentally. It was shown that hydrogen plasma treat-ment of vertically aligned few layer graphene results inthe formation of graphane/graphone layers with ferro-magnetic ground state.86 Therefore graphone/graphanebilayers with their hydrogen concentration dependentmagnetic properties are promising for nanoscale spin-tronic device applications. It appears that the formationof H vacancies on graphane not only suitable for provid-ing spin polarization but can also be used for engineeringthe electronic characteristics.

C. Doping by Foreign Atoms

Although impurities such as single atoms, moleculesand small clusters on ultra-thin materials appear as un-desirable residua from the synthesis process, these impu-rities can also be utilized for the modification of electronicand magnetic properties of these materials.

Lu et al. showed that the electronic structure of fluo-rine doped graphane is very sensitive to the doping con-figuration, due to the competition between anti-bondingstates and nearly surface states.87 An interesting appli-cation of graphane, as a PNP transistor, was proposedby Gharekhanlou et al.88 . Using graphane with hydro-gen deficiency to reduce the band gap, it was shown that,within the approximation of the Shockley law for junc-tions, an exponential ideal I-V characteristic is expectedand the curvature of the collector current characteristicsshows good agreement with an ideal bipolar transistor.

Moreover, Hussain et al. studied the stability andpossibility of hydrogen storage applications of Ca-dopedgraphane. They found that Ca-doped graphane structureremains stable even at high temperatures and hydrogenstorage capacity of a monolayer Ca-doped graphane witha doping concentration of 11 % of Ca on a graphane sheet,and a reasonably good H2 storage capacity of 6wt %could be attained.89 In addition the same group reportedthat neither a pristine graphane sheet nor the sheet de-fected by removing a few surface H atoms have sufficientaffinity for either H2S or NH3 gas molecules. However,a graphane sheet doped with Li adatoms shows a strongsensing affinity for both mentioned gas molecules.90

Doping of graphane not only results in the modificationof the electronic bandgap, but also can yield the emer-gence of novel phases in the material. Savini et al. pre-dicted by using first-principles calculations that p-dopedgraphane is an electron-phonon superconductor and thepresence of a giant Kohn anomaly in the optical phonondispersions, that originates from a large density of elec-tronic states at the Fermi energy and strong carbon-carbon bonds, results in a superconducting phase.37 Inaddition, using mean-field theory, Loktev et al.91 consid-ered superconducting properties of multilayer and single

FIG. 11: (Upper row) Energy bandgap of zigzag and arm-chair nanoribbons as a function of ribbon width. (Lower row)Magnetic ground state analysis of zigzag graphane nanorib-bons from Ref.39.

layer graphane by taking into account fluctuations of theorder parameter. They showed that, even for low dopingcases, in the single-layer and multilayer case the criticaltemperature is predicted to be 100 K and 150 K, respec-tively.

Da et al.92 studied the magnetic properties of graphaneby substituting the C atoms along with its attached Hatoms with transition metal (TM) atoms. It was alsoshown that a maximum magnetic moment of 3.5 µB canbe reached by embedding Mn in graphane. In anotherDFT study by AlZahrani revealed that the hollow-siteadsorption configuration on graphane is the most prefer-able one for Mn atoms.93 Also, a heterojunction structureembedded with nickel and vanadium within graphanesuppress the spin-down current while the spin-up cur-rent appears at the negative bias voltage, resulting ina spin current diode. Yang94 showed that creating avacancy of a hydrogen atom generates a magnetic mo-ment of 1 µB and if this vacancy is occupied by transi-tion metal elements, the magnetic moment can enhancedmany fold. Leenaerts et al.95 investigated the effect ofsubstitutional doping of fluorographene with boron andnitrogen atoms on its electronic and magnetic proper-ties using first-principles calculations. Boron dopantsacted as shallow acceptors and caused hole doping butno changes in the magnetic properties were observed.Nitrogen dopants acted as deep donors and gave rise toa magnetic moment, but the resulting system becamechemically unstable. These results are opposite to whatwas found for substitutional doping of graphane in whichcase B substituents induce magnetism and N dopants donot.

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In addition, bandgap excitations graphane and itsderivatives was studied by Nelson et al.96 The nonra-diative lifetime and radiative line width of the lowest en-ergy singlet excitations in pure and oxidized graphaneswere determined by performing nonadiabatic moleculardynamics combined with time-dependent density func-tional theory.

D. Ribbons

Advances in experimental techniques have also madethe synthesis of ultra-narrow one dimensional structures”few-atoms-wide ribbons” possible. Dimensional reduc-tion of graphane is another efficient way of tuning its elec-tronic properties. As reported by Sahin et al.82 nanorib-bons (NRs) of graphane have some distinctive properties.It was shown that H-terminated armchair and zigzaggraphane NRs display a band-gap reduction with increas-ing width (see Fig. 11). This behavior could be fittedto an expression Egap = 3.42 + αexp(−Nβ) eV. Here αand β are fitting parameters and are found to be 1.18(2.15) and 0.19 (0.14) for zigzag (armchair) graphaneNRs. While bare zigzag graphane NR is an antiferromag-netic semiconductor with an indirect band gap relativelysmaller than that of 2D graphane, armchair NRs are non-magnetic semiconductors. However, upon the saturationof edge atoms both NR types become direct band-gapsemiconductor having a nonmagnetic ground state.

Moreover, Zhang et al.,97 using the density functionaltheory methodology, predicted that the band gap ofgraphane nanoribbons can be tuned linearly with strainregardless of their widths or edge structures. Moreover,the band gap of the graphane nanoribbon is more sen-sitive to compressive than tensile deformation, whichmainly originates from the shift of its valence band edgeunder strain. In addition, another interesting prop-erty, the presence of two types of nearly-free-electronstates in graphane NRs was predicted by Liu et al.98

It was also shown by Wu et al.99 that by forming one-dimensional H-vacancy chains in graphane one can createvarious patterns of graphane/graphene NRs with tunablebandgaps.85

E. Strain Engineering

Due to the atomic scale thickness of ultra-thin mate-rials characteristic properties of them are quite sensitiveto lattice deformations. As an efficient way, strain en-gineering of two-dimensional materials has been widelystudied to tailor the electronic properties of materials andimprove their optical properties.

Elastic properties of graphane were first studied byTopsakal et al.,39 using DFT-based strain energy cal-culations in the harmonic elastic deformation range. Itwas found that graphane is a quite stiff material and al-though the applied strain has negligible effect on strong

FIG. 12: Evolution of the energy bandgap (upper) and elec-tronic dispersion (lower) as a function of strain (from Ref.82).

C-H bonds, stretched C-C bonds yield a dramatical mod-ulation in the conduction band states (see Fig. 12). Inaddition, quantum-mechanochemical reaction-coordinatesimulations were performed by Popova et al.100 to in-vestigate the mechanical properties of graphane. Theyshowed that hydrogenation of graphene drastically influ-ences the behavior and numerical characteristics of thebody, making tricotage-like pattern of graphene failureless pronounced and inverting it from the zigzag to arm-chair mode as well as providing less mechanical resistanceof graphane in total.

Recently, Peng et al.101 studied the effect of dispersionforces on the mechanical properties of graphane. By per-forming DFT calculations with DFT-D2 approximatedvan der Waals (vdW) corrections they showed that vdWhas little effect on the geometry (

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stronger graphane-metal binding. Recently, Hussain etal.90 showed that defected graphane functionalized bothsides by poly-lithiated species CLi3 and CLi4, a storagecapacity of more than 13 wt % can be achieved. Further-more, the binding energies of the absorbed H2 are in therange 0.25 eV − 0.35 eV , which is well suited for an effi-cient H2 storage. Hussain et al.

89 also studied the effectof strain on the adsorption of hydrogen on the lithiumdoped graphane system. For strain-free case, at most 3hydrogen molecules can be adsorbed on each Li resultingin a storage capacity of 9.37 wt%. While applying bi-axial asymmetric strain, a stronger binding between Li-graphane occurs. Now at most 4 hydrogen molecules canbe adsorbed on each Li enhancing the storage capacity to12 wt% beyond the Department of Energy target of 2017.In addition, Xiao et al.103 examined CO2 adsorption overvarious N-substituted/grafted graphanes to identify thepromotional effects of various N-functionalities have onthe adsorption characteristics using DFT. It was foundthat the presence of co-adsorbed H2O on the surface pro-motes CO2 adsorption on both N- and NH2-sites, withhighly exothermic adsorption energies.

Frictionless, lubricant or near-frictionless surfaces mayfind applications in the various fields of materials scienceand engineering. Using the Prandtl-Tomlinson model to-gether with ab initio calculations Cahangirov et al. inves-tigated the interlayer interaction under constant loadingforce and derived the critical stiffness required to avoidstick-slip behavior.105 It was also shown that graphaneand similar layered structures have low critical stiffnesseven under high loading forces due to their charged sur-faces repelling each other. Similarly, Wang et al. calcu-lated the friction characteristics of graphane and fluoro-graphene. Their calculations revealed the general mech-anism of atomic-scale friction in various graphene-basedlayered materials where the interlayer interaction is dom-inated by van der Waals and electrostatic interactions.106

Kim et al.104 studied monolayer halogenated graphaneusing first-principles calculations. Different configura-tions of hydrogen and halogen atoms (F, Cl, Br) attachedto graphene break the inversion symmetry and hencegive piezoelectricity. (C2HF)n polar conformation wasmost energetically stable with piezoelectricity due to thechange of the electron distribution around the F atoms.(C2HCl)n showed an enhancement in the piezoelectricitybut the stability was degraded.

Thermoelectric materials, that have gained importancein recent years, can be used for the development of newcooling and power generation methods. Using thermo-electric materials one can convert the thermal differenceinto electrical energy or use electrical current for the cre-ation of temperature difference. For an efficient ther-moelectric device good electrical conductivity and lowthermal conductivity is essential. Considering these re-quirements Ni et al.107 investigated the possible use of

graphane as a thermoelectric device and predicted thatdisordered armchair graphane NRs are promising candi-dates for constructing thermoelectric materials. The highfigure of merit, low cost, and easy synthesis of graphanemake it a viable choice for thermoelectric applications.

The detection of explosives is one of the main con-cern for a secure and safe society. Trinitrotoluene (TNT)which is the main component in explosives, is toxic tothe environment and a possible source of cancer in hu-mans. Recently, electrochemical methods have emergeddue to its rapid response time, portability, accuracy andlower cost than other analytical methods. Seah et al.108

used partially hydrogenated graphene and graphene asa sensing platform for TNT in seawater. They foundgraphene is more sensitive due to large aromatic ringswhich favor surface accumulation or larger preconcentra-tion of analytes. Moreover, Tan et al.109 have demon-strated, using electrochemical methods, that graphaneexhibits different electrochemical behavior towards oxi-dation/reduction of important biomarkers, such as ascor-bic acid, dopamine and uric acid when compared to or-dinary graphene.

VI. CONCLUSIONS

In this overview we have discussed the so-calledgraphane from synthesis to applications. We have showedthat one-by-one hydrogenation of graphene results ingraphane which is a stable, direct bandgap insulator withstrong C-H bonds. We also showed that for the synthe-sis of graphanes one can choose various methods such ashydrogen plasma exposure of graphene, thermal exfolia-tion of graphene oxides, STM-assisted hydrogenation ofgraphene, plasma-enhanced CVD and electron-induceddissociation of HSQ on graphene. We have also presentedthat electronic and magnetic properties of graphene canbe modulated by various techniques such as synthesis ofgraphanes with different C/H ratios, formation of vacan-cies, application of strain and dimensional reduction. Fi-nally, we showed that hydrogenated graphenes may alsofound applications in various fields such as hydrogen stor-age, piezzo-electricity, thermo-electrics, explosive detec-tion and biosensing devices. We believe that future stud-ies on functionalized graphane will reveal many interest-ing properties of this material.

Acknowledgments

This work was supported by the Flemish Science Foun-dation (FWO-Vl) and the Methusalem foundation of theFlemish government. H.S. is supported by a FWO Pega-sus Long Marie Curie Fellowship.

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∗ Electronic address: hasan.sahin@uantwerpen.be† Electronic address: ortwin.leenaerts@uantwerpen.be‡ Electronic address: sandeepkumar.singh@uantwerpen.be§ Electronic address: francois.peeters@uantwerpen.be1 Novoselov KS, Geim AK, Morozov SV, Jiang D, Zhang Y,

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I IntroductionII Properties of GraphaneA Atomic StructureB Electronic StructureC Optical propertiesD Magnetic propertiesE Vibrational propertiesF Mechanical properties

III SynthesisIV Engineering the Properties of GraphaneA Graphanes with Various C/H RatiosB Vacancy FormationC Doping by Foreign AtomsD RibbonsE Strain Engineering

V Possible ApplicationsVI Conclusions Acknowledgments References