GCCCG-1/DKT2016 1st German Czechoslovak Conference on Crystal Growth

March 16 - 18, 2016, Dresden, Germany

Under the auspices of

German Association of Crystal Growth and Czechoslovak Association of Crystal Growth

Organized by

https://download.iisb.fraunhofer.de/www-dkt2016/

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GCCCG-1 / DKT2016 Venue GCCCG-1 / DKT2016 will take place in the Görges-Building, which is located in the center of the main campus of Technische Universität (TU) Dresden. The campus is in the south of Dresden 2.5 km from the city center.

TU Dresden, Görges-Bau, Helmholtzstraße 9, 01069 Dresden

Access

By car

Take the motorway A4, at interchange Dresden-West change to the A17 to Praha. Exit at Dresden-Südvorstadt. Follow the road into town for around 2 km up to the campus of the TU Dresden. Turn left into the Mommsenstraße at the end of which is the Helmholtzstraße.

From the airport or by train or tram

From the airport Dresden-Klotzsche take the city-railway (S-Bahn S2) to the Dresden Main Station (Dresden-Hauptbahnhof). From the Dresden Main Station (Dresden-Hauptbahnhof) take the tram No. 3 (destination Coschütz) or No. 8 (destination Südvorstadt), two stops to "Nürnberger Platz". (Preisstufe 1)

Then, by feet turn from Münchner Straße into the Helmholtzstraße and follow almost up to Nöthnitzer Straße.

Main Event Locations Main Auditorium & General Assembly of DGKK: GÖR/0226/H (2nd Floor), Görges-Bau, Helmholtzstraße 9

Poster Session & Industrial Exhibition: GÖR/0127 (1st Floor) and GÖR/0229 (2nd Floor), Görges-Bau, Helmholtzstraße 9

Coffee Break: Foyer 1st floor, GÖR/0127 (1st Floor), GÖR/0229 (2nd Floor),G örges-Bau, Helmholtzstraße 9

Lunch: Alte Mensa, Mommsenstr. 13

Conference Dinner: Alte Mensa, Mommsenstr. 13

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GCCCG-1 / DKT2016 Map

Wednesday, March 16 10:00 Opening Ceremony Session 1: 100 years of Cz method (Chair: J. Friedrich, Fraunhofer THM, Freiberg) 10:15 R. Uecker (Invited)

Leibniz Institute for Crystal Growth, Max-Born-Strasse 2, 12489 Berlin, Germany 100 years of the Czochralski method - Historical aspects

10:45 A. Mühe (Invited) Siltronic AG, Germany Recent trends in silicon wafer demand and impact on CZ crystal manufacturing

11:15 S. Eichler (Invited) Freiberger Compound Materials GmbH, Am Junger-Löwe-Schacht 5, 09599 Freiberg, Germany LEC to VGF – Growth of GaAs

11:45 M. Klejch, K. Bartoš, J. Polák, J. Houžvička (Invited) CRYTUR spol. s r.o., Palackého 175, 511 01 Turnov, Czech Republic New method to grow large core free YAG crystals

12:15 Lunch Break Session 2: Silicon (Chair: P. Wellmann, FAU Erlangen) 14:00 Y. Pichon, A. Schönecker, B. Kraijveld, M. Den Heijer (Invited)

RGS Development B.V., Bijlestaal 54 A, 1721 PW Broek op Langedijk, The Nether-lands Rapid growth of silicon and silicon alloys by the RGS (Ribbon Growth on Substrate) technique for energy applications

14:30 L. Stockmeier1, L. Lehmann2, C. Reimann1,3, J. Friedrich1,3 1 Fraunhofer THM, Am St.-Niclas-Schacht 13, 09599 Freiberg, Germany 2 Siltronic AG, Berthelsdorfer Straße 113, 09599 Freiberg, Germany 3 Fraunhofer IISB, Schottkystraße 10, 91058 Erlangen, Germany Possible reasons for dislocation formation in heavily doped Czochralski grown Si

14:50 K. Dadzis, P. Bönisch, L. Sylla, T. Richter SolarWorld Innovations GmbH, Berthelsdorfer Str. 111A, 09599 Freiberg, Germany Validation, verification, and benchmarking of crystal growth simulations

15:10 I. Kupka1, C. Reimann1,2, T. Lehmann1, D. Oriwol3, F. Kropfgans3, J. Friedrich1,2 1 Fraunhofer THM, Am St.-Niclas-Schacht 13, 09599 Freiberg, Germany 2 Fraunhofer IISB, Schottkystr. 10, 91058 Erlangen, Germany 3 SolarWorld Innovations GmbH, Berthelsdorfer Str. 111A, 09599 Freiberg, Germany Influence of different nucleation layers on the initial grain structure of multi-crystalline silicon ingots

15:30 C. Ehlers, R. Bansen, T. Teubner, T. Markurt, K. Irmscher, A. Fiedler, T. Boeck Leibniz Institute for Crystal Growth, Max-Born-Str. 2, 12489 Berlin, Germany Properties of Crystalline Silicon Layers grown on Glass for Photovoltaic Applications

15:50 Coffee Break Session 3: Advanced epitaxy (Chair: M. Heuken, Aixtron, Herzogenrath) 16:30 E. Hulicius1, A. Hospodková1, J. Oswald1, J. Pangrác1, M. Zíková1, J. Vyskočil1, K.

Kuldová1, K. Melichar1, T. Hubáček1, J. Walachová2, J. Vaniš2, V. Křápek3, J. Humlíček3, M. Nikl1, O. Pacherová1, P. Brůža4, D. Pánek4, B. Foltynski5, M. Oeztuerk3, M. Heuken5 (Invited) 1 Institute of Physics CAS, v. v. i., Prague, Czech Republic 2 Institute of Photonics and Electronics CAS, v. v. i., Prague, Czech Republic 3 Masaryk University – Faculty of Natural Sci., Brno, Czech Republic 4 Faculty of Biomedical Engineering CTU, Kladno, Czech Republic 5 AIXTRON SE, Kaiserstraße 98, 52134, Herzogenrath, Germany Nanostructures grown by MOVPE: InAs/InGaAs/Ga(Sb)As quantum dot and GaN/InGaN quantum well structures

17:00 B. Kunert, W. Guo, Y. Mols, R. Langer, K. Barla (Invited) Imec, Kapeldreef 75, B-3001 Leuven, Belgium III/V integration on Silicon substrates by selective area growth

DGKK-Young Scientist Award (Chair: W. Miller, IKZ Berlin) 17:30 O. Supplie1-3,*, S. Brückner1,2, M. May1-3, P. Kleinschmidt1, A. Nägelein1, A. Paszuk1,

O. Romanyuk4, F. Grosse5, T. Hannappel1,2 (Invited) 1 Technische Universität Ilmenau, Institute of Physics, Photovoltaics Group, Ilmenau, Germany 2 Helmholtz-Zentrum Berlin für Materialien und Energie, Institute for Solar Fuels, Berlin, Germany 3 Humboldt-Universität zu Berlin, Institute of Physics, Berlin, Germany 4 Institute of Physics, Academy of Sciences of the Czech Republic, Prague, Czech Re-public 5 Paul-Drude Institut für Festkörperelektronik, Berlin, Germany GaP-on-Si heterointerfaces and quasisubstrate growth studied in situ during MOVPE

18:30 Break 19:00 General Assembly of DGKK

Thursday, March 17 Session 4: Oxides and intermetallics (Chair: A. Erb, Walther-Meißner Institute Munich) 08:20 L. Harnagea, C. Nacke, S. Aswartham, R. Kappenberger, I. Morozov, A. U. B. Wolter,

H.-J. Grafe, U. Gräfe, F. Hammerath, D. Bombor, F. Steckel, A. Alfonsov, G. Lang, V. Kataev, D.V. Evtushinsky, S.V. Borisenko, C. Hess, S. Wurmehl, B. Büchner (In-vited) Leibniz Institute for Solid State and Materials Research Dresden IFW, Dresden, Ger-many Single crystal growth and characterization of Fe-based superconductors

08:50 J. Pejchal1, R. Kral1, S. Kurosawa2, K. Kamada2, V. Babin1, A. Beitlerova1, R. Kucerkova1, A. Yoshikawa2,3, M. Nikl1 (Invited) 1 Institute of Physics CAS, Cukrovarnicka 10, Prague, Czech Republic 2 New Industry Creation Hatchery Center, Tohoku University, 6-6-7 Aramaki, Sendai, Japan 3 Institute for materials Research, Tohoku University, 2-1-1 Katahira, Sendai, Japan Growth of scintillation crystals by micro-pulling-down method

09:20 F. Kamutzki, C. Guguschev, D.J. Kok, R. Bertram, U. Juda, R. Uecker Leibniz Institute for Crystal Growth, Max-Born-Strasse 2, 12489 Berlin, Germany The influence of oxygen partial pressure in the growth atmosphere on the coloration of SrTiO3 single crystal fibers

09:40 P. Sass, R. Schöndube ScIDre GmbH – Scientific Instruments Dresden, Gutzkowstrasse 30, 01069 Dresden, Germany High-pressure and ambient gas effect on the optical floating zone crystal growth of novel oxide and intermetallic compounds

10:00 K. Kliemt, T. Ballé, C. Krellner Institute of Physics, Goethe University Frankfurt, 60438 Frankfurt, Germany Crystal growth from high temperature solutions in the series RRh2Si2 (R = Sm, Gd, Ho, Yb) and CeRu1-xFexPO

10:20 Coffee Break Session 5: Sensors and Advanced characterization methods (Chair: J. Weber, TU Dres-den) 10:50 N. Neumann (Invited)

Infratec GmbH, Gostritzer Strasse 61-63, 01217, Dresden, Germany Crystals for pyroelectric sensors

11:20 C. Guguschev1, R. Tagle2, U. Juda1, A. Kwasniewski1, T. Ervik1, R. Uecker1, S. Kay-ser1, F. M. Kießling1, M. Bickermann1 1 Leibniz Institute for Crystal Growth, Max-Born-Strasse 2, 12489 Berlin, Germany 2 Bruker Nano GmbH, Am Studio 2D, Berlin, 12489, Germany Microstructural investigations of SrTiO3 single crystals and multicrystalline silicon us-ing a powerful new X-ray diffraction surface mapping technique

11:40 M. Herms, M. Wagner PVA Metrology & Plasma Solutions GmbH, Am Naßtal 8, 07751 Jena-Maua, Germa-ny Photoelastic characterization of crystal defects in semiconductor wafers

12:00 N. Schüler, K. Dornich, T. Weißbach, H. Berger, J. R. Niklas Freiberg Instruments GmbH, Delfter Str. 06, 09599 Freiberg, Germany Lifetime, defect investigation and crystal orientation on wide band gap semiconduc-tors

12:20 M. Knetzger1, E.Meissner1, G. Leibiger2, J.Friedrich1, B. Weinert2 1 Fraunhofer IISB, Schottkystr.10, 91094 Erlangen, Germany 2 Freiberger Compound Materials, Am Junger-Löwe-Schacht 5, 09599 Freiberg, Germany Correlative structural and optical investigations on V-pit defects in HVPE grown GaN

12:40 Lunch Break Session 6: GaN (Chair: T. Mikolajick, Namlab Dresden) 14:00 J. Würfl, O. Hilt, M. Troppenz, F. Brunner, E. Bahat-Treidel (Invited)

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany Drift and degradation effects in GaN power devices: Material properties matter

14:30 S. Besendörfer1, E. Meissner2, A. Lesnik3, J. Friedrich2, L. Frey1,2 1 Chair of Electron Devices, FAU Erlangen-Nuremberg, Cauerstr. 6, 91058 Erlangen 2 Fraunhofer IISB, Schottkystr. 10, 91058 Erlangen, Germany 3 Institute for Experimental Physics, Otto-von-Guericke-Universität Magdeburg, Uni-versitätsplatz 2, 39106 Magdeburg Threading dislocations as leakage current paths through AlGaN/GaN heterostructures

14:50 B. Mitrovic, A. Bagchi (Invited) Veeco Process Equipment Inc., U.S.A. MOVPE reactor design and process optimization based on modeling and simulation

15:20 M. Heuken, E. Sakalauskas, X. Chen, O. Feron, H. Behmenburg, R. Leiers, M. Lue-nenbuerger, P. Lauffer, A. R. Boyd, J. Lindner AIXTRON SE, Dornkaulstr 2, 52134 Herzogenrath, Germany Blue LED manufacturing optimization based on a MOCVD growth parameter sensi-tivity study

15:40 R. Niewa1, J. Hertrampf1, T. M. M. Richter1, N. S. A. Alt2, E. Schlücker2 (Invited) 1 Institut für Anorganische Chemie, Universität Stuttgart, Germany 2 Institute of Process Machinery and Systems Engineering, Friedrich-Alexander-University Erlangen, Germany Chemistry of ammonothermal semiconductor crystal growth

16:10 S. Schimmel1, M. Koch1, T. G. Steigerwald2,3, A.-C.L. Kimmel2, N. S. A. Alt2, E. Schlücker2, P. J. Wellmann1 1 Materials Department 6, Friedrich-Alexander-University Erlangen-Nürnberg (FAU), Martensstr. 7, 91058 Erlangen, Germany 2 Institute of Process Machinery and Systems Engineering, Friedrich-Alexander-University Erlangen-Nürnberg (FAU), Cauerstr. 4, 91058 Erlangen, Germany 3 Erlangen Graduate School in Advanced Optical Technologies (SAOT), Friedrich-Alexander-University Erlangen-Nürnberg (FAU), Cauerstr. 4, 91058 Erlangen, Ger-many Solubility and dissolution kinetics of GaN under ammonobasic conditions using NaN3 mineralizer

16:30 Poster Session with Drinks 19:30 Conference Dinner

including the Announcement of the Winner of the DGKK-Best Poster Award

Friday, March 18

Session 7: Fundamentals (Chair: G. Gerbeth, HZDR, Dresden) 08:20 Z. Kožíšek (Invited)

Institute of Physics CAS, Cukrovarnická 10, 16200 Praha 6, Czech Republic Crystal nucleation kinetics in confined systems

08:50 O. Weinstein1, W. Miller2, S. Brandon1 (Invited) 1 Chemical Engineering, Technion, Haifa, Israel 2 Simulation and Characterization, Leibniz Institute for Crystal Growth, Berlin Facets, capillarity and heat transfer during oxide growth from the melt

09:20 D. Meier1, N. Thieme2, P. Bönisch3, K. Dadzis3, l. Büttner2, O. Pätzold1, J. Czarske2, M. Stelter1 1 Institute of Nonferrous Metallurgy and Purest Materials, TU Bergakademie Freiberg, Germany 2 Laboratory for Measurement and Sensor System Techniques, TU Dresden, Germany 3 SolarWorld Innovations GmbH, Freiberg, Germany Setup for model experiments for silicon crystal growth

09:40 J. Pal1, I. Grants2, S. Eckert1, G. Gerbeth1 1 Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany 2 Institute of Physics, University of Latvia, Salaspils, Latvia Physical model of Czochralski crystal growth in a horizontal magnetic field

10:00 R. Král1, V. Jarý1, J. Šulc2, H. Jelínková2, K. Nitsch1, A. Bystřický1, P. Zemenová1, M. Nikl1 1 Institute of Physics, Czech Academy of Sciences, Cukrovarnicka 10, 162 00 Prague, Czech Republic 2 Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University in Prague, Břehová 7, 115 19 Prague 1, Czech Republic Growth and luminescence study of RE-doped rubidium lead chloride single crystals prepared by vertical Bridgman method

10:20 Coffee Break Session 8: Microgravity and SiC (Chair: L. Kadinski, Siltronic AG, Burghausen) 10:50 T. Sorgenfrei1, A. Hess1, J. Zähringer1, A. Danilewsky1, A. Cröll1, A. Egorov2, A.

Senchenkov2 1 Crystallography, University of Freiburg, Germany 2 NIISK, Research and Development Institute for Launch Complexes, Moscow, Russia Growth of doped Ge crystals under µg and 1g conditions to determine the influence of different melt convection states

11:10 M. Fiederle1, A. Fauler1, A. Senchenkov2, S.A. Senchenkov2, A.S. Egorov2 1 Materials Research Center FMF, Freiburg, Germany 2 Research and Development Institute for Launch Complexes NIISK, Moscow, Russia Growth of (Cd,Zn)Te crystals by Travelling Heater Method under microgravity

11:30 P. Schuh1, M. Wilhelm1, G. Litrico2, F. La Via2, M. Mauceri3, P. J. Wellmann1 1 Crystal Growth Lab, Materials Department 6 (i-meet), FAU Erlangen-Nuremberg, Martensstr. 7, 91058 Erlangen, Germany 2 CNR-IMM, sezione di Catania, Stradale Primosole 50, I-95121 Catania, Italy 3 E. T. C. Epitaxial Technology Center, Sedicesima Strada, I-95121 Catania, Italy Physical vapor phase growth of bulk-like 3C-SiC using 3C-SiC-on-Si seeding layers

11:50 F. Wischmeyer, T. Chen, M. Eickelkamp, D. Fahle, C. Mauder, M. Heuken AIXTRON SE, Dornkaulstr. 2, 52134 Herzogenrath, Germany Advances in wide band-gap semiconductor vapor phase epitaxy for efficient power devices

12:10 J. Erlekampf, K. Semmelroth, P. Berwian, J. Friedrich Fraunhofer IISB, Schottkystr. 10, 91058 Erlangen, Germany Influence of high temperature treatments on carbon vacancies in 4H-SiC

12:30 Lunch Break

Session 9: Functional thin films (Chair: Z. Kozisek, Czech Academy of Sciences, Prague) 14:00 A. Kromka

Institute of Physics CAS, Cukrovarnická 10, 16200 Praha 6, Czech Republic Growth of diamond films for life sciences

14:30 J. Cajzl1, P. Nekvindová1, A. Macková2,3, P. Malinský2,3, D. Sedmidubský1, M. Hušák1, Z. Remeš4, M. Varga4, A. Kromka4, J. Oswald4, R. Böttger5 1 Department of Inorganic Chemistry, University of Chemistry and Technology, Tech-nická 5, 166 28 Prague, Czech Republic 2 Nuclear Physics Institute, Czech Academy of Sciences, v. v. i., 250 68 Řež, Czech Republic 3 Department of Physics, J.E. Purkinje University, České mládeže 8, 400 96 Ústí nad Labem, Czech Republic 4 Institute of Physics, Czech Academy of Sciences, v.v.i., Cukrovarnická 10/112, 162 00 Prague, Czech Republic 5 Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materi-als Research, Bautzner Landstraße 400, 01328 Dresden, Germany Ion implantation of erbium into diamond and nanocrystalline diamond thin films

14:50 K. Rubešová, V. Jakeš, T. Hlásek, D. Mikolášová (Invited) Department of Inorganic Chemistry, University of Chemistry and Technology, Tech-nická 5, Prague 6, 166 28, Czech Republic Sol-gel method as a way to functional materials

15:20 J. Grym, R. Yatskiv, J. Vaniš, I. Nahálka Institute of Photonics and Photonics of the CAS, Prague, Czech Republic Solution growth of the arrays of ZnO nanorods on patterned substrates

15:40 Closing Ceremony

including the Announcement of the Winner of the DGKK-Best Presentation Award 16:00 End of GCCCG-1/DKT2016

Poster Session (Thursday, March 17, 16:30) Fundamentals

1. J. Zähringer1, A. Hess1, T. Sorgenfrei1, A. Cröll1, A. Egorov2, A. Senchenkov2 1 Crystallography, University of Freiburg, Germany 2 NIISK, Research and Development Institute for Launch Complexes, Moscow, Russia Numerical simulation of natural and forced convection during Bridgman crystal growth under µg and 1g conditions

2. N. Thieme1, D. Meier2, P. Bönisch3, K. Dadzis3, R. Nauber1, L. Büttner1, O. Pätzold2, J. Czarske1 1 TU Dresden, Laboratory for Measurement and Sensor System Techniques, Germany 2 TU Bergakademie Freiberg, Institute of Nonferrous Metallurgy and Purest Materi-als, Germany 3 SolarWorld Innovations GmbH, Freiberg, Germany Ultrasonic measurement system for 3D turbulent melt flows in model experiments

3. T. Wondrak, J. Pal, F. Stefani, S. Eckert Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany First experimental results of applying the contactless inductive flow tomography to a thermally driven convection problem motivated by Czochralski crystal growth

4. N.L. Gorn1, D.V. Berkov1, M. Jurisch2 1 General Numerics Research Lab e.V., Moritz-von-Rohr-Str. 1a, Jena, Germany 2 Freiberger Compound Materials GmbH, Am Junger Löwe Schacht 5, Freiberg, Germany Numerical method for calculating the stress field induced by an arbitrary spatial distri-bution of dislocations

5. S. Kayser, A. Lüdge Leibniz Institute for Crystal Growth, Max-Born-Strasse 2, 12489 Berlin, Germany Calculation of heating treatment during Lateral Photovoltage Scanning- (LPS) and Scanning Photoluminescence- (SPL) measurements

6. E. Mozhevitina1, M. Zykova1, V. Krolevetskya1, Ev. Gavrishchuk2, I. Avetissov1 1 D. Mendeleyev University of Chemical Technology of Russia, Russia 2 G.G. Devyatykh Institute of Chemistry of High-Purity Substances of the Russian Academy of Science, Russia Solubility of Fe in crystalline nonstoichiometric ZnSe

7. V. Antonov1, N. Zhavoronkov1, A. Khomykov2, E. Mozhevitina2, I. Avetissov2 1 Research Institute of Material Science and Technology, Russia 2 D. Mendeleyev University of Chemical Technology of Russia, Russia Estimation of the growth angle of ZnSe melt grown crystals

8. J. Markert, A. Cröll Crystallography, University of Freiburg, Germany Wetting Angles of Indium (I) Iodide with Different Crucible Materials

Silicon, Germanium, IV-IV Compound Semiconductors 9. A. Poklad1, V. Galindo2, E. Schmid1, O. Pätzold1, M. Stelter1, G. Gerbeth2

1 Institute of Nonferrous Metallurgy and Purest Materials, TU Bergakademie Frei-berg, Freiberg, Germany 2 Institute of Fluid Dynamics, Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany Seeding techniques in growth of multi-crystalline silicon in a cone-shaped, inductively heated setup

10. P. Beckstein, V. Galindo, G. Gerbeth Department of Magnetohydrodynamics Helmholtz-Zentrum Dresden-Rossendorf, Bau-tzner Landstraße 400, 01328 Dresden, Germany Free-Surface Modelling in the Ribbon Growth on Substrate Process (RGS)

11. T. Jauß1, A. Cröll1, T. Sorgenfrei1, C. Reimann2, J. Friedrich2 1 University of Freiburg, Crystallography, Hermann-Herder-Straße 5, 79104 Frei-burg, Germany 2 Fraunhofer IISB, Schottkystraße 10, 91058 Erlangen, Germany The critical growth rate for particle incorporation during solidification of solar silicon under microgravity

12. N. Pfändler, T. Jauß, A. Danilewsky, A. Cröll, T. Sorgenfrei Crystallography, University of Freiburg, Germany In-situ observation of the interaction of foreign phase particles and the growth front in transparent melts

13. M. Yasseri, T. Jauß, T. Sorgenfrei, A. Cröll Crystallography, University of Freiburg, Germany Influence of high temperature treatment on wetting behavior of silicon nitride powders used for investigation of particle incorporation in PV silicon

14. A. Hess1, T. Sorgenfrei1, J. Zähringer1, A. Cröll1, A. Egorov2, A. Senchenkov2 1 Crystallography, University of Freiburg, Germany 2 NIISK, Research and Development Institute for Launch Complexes, Moscow, Russia The influence of solutocapillary convection on the GeSi growth with free melt surfac-es

15. S. Weit, T. Sorgenfrei, A. Cröll, A. N. Danilewsky Crystallography, University of Freiburg, Germany Growth of bulk crystals in the germanium-silicon system

16. P. Fritsch, K. Rießle, T. Sorgenfrei, A. Cröll, A. N. Danilewsky Crystallography, University of Freiburg, Germany Growth and Characterization of Germanium from Tin-Solution

17. L. Fahlbusch, M. Schöler, P.J. Wellmann Crystal Growth Lab, Materials Departmet 6 (i-meet), FAU Erlangen-Nürnberg, Mar-tensstr. 7, 91058 Erlangen, Germany High temperature solution growth of SiC using a metal free Si-C-melt at 2300 °C by the Vertical Bridgman method

III-V, II-VI Compound Semiconductors 18. A. Dittmar, F. Lehmann, C. Hartmann, C. Guguschev, J. Wollweber, M. Bickermann

Leibniz Institute for Crystal Growth, Max-Born-Strasse 2, 12489 Berlin, Germany PVT grown Al1-xScxN as lattice matched substrate for AlGaN-UV LEDs

19. M. Zíková, A. Hospodková, J. Oswald Department of Semiconductors, Institute of Physics, Czech Academy of Sciences, v.v.i., Prague, Czech Republic Origin of the yellow luminescence band in nitride based semiconductors prepared by the MOVPE technology

20. S. Sintonen1, S.Suihkonen2, K. Irmscher1, T. Schulz1, A.N. Danilewsky3, T. O. Tu-omi2, R. Stankiewicz4, M. Albrecht1 1 Leibniz Institute for Crystal Growth, Berlin, Germany 2 Aalto University School of Electrical Engineering, Finland 3 Albert-Ludwigs-Universität, Kristallographie, Freiburg, Germany 4 Ammono S.A., Warsaw, Poland On the impurity incorporation evolution during growth of ammonothermal GaN

21. A. Hospodková, M. Zíková, T. Hubáček, K. Kuldová, J. Oswald Institute of Physics CAS, v.v.i., Cukrovarnická 10, Praha 6, Czech Republic InGaN/GaN MQW for scintillators perspectives and problems

22. P. Nekvindová1, J. Cajzl1, A. Macková2,3, P. Malinský2,3, J. Oswald4, R. Yatskiv5, R. Böttger6 1 Department of Inorganic Chemistry, University of Chemistry and Technology, Tech-nická 5, 166 28 Prague, Czech Republic 2 Nuclear Physics Institute, Czech Academy of Sciences, v. v. i., 250 68 Řež, Czech Republic 3 Department of Physics, J.E. Purkinje University, České mládeže 8, 400 96 Ústí nad Labem, Czech Republic 4 Institute of Physics, Czech Academy of Sciences, v.v.i., Cukrovarnická 10/112, 162 00 Prague, Czech Republic 5 Institute of Photonics and Electronics, Academy of Sciences of the Czech Republic, v.v.i., Chaberská 57, 182 51 Prague, Czech Republic 6 Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materi-als Research, Bautzner Landstraße 400, 01328 Dresden, Germany Preparation and characterization of Er:ZnO used for photonics at around 1.5 μm

23. R. Ley, A. Vogt, S. Schütt, M. Fiederle Materials Research Center FMF, Albert-Ludwigs-University Freiburg, Germany Investigation of MBE grown CdTe thin film for radiography applications

Lasers, Superconductors, Scintillators, Energy Materials 24. C. Guguschev, Z. Galazka, D. Kok, U. Juda, R. Uecker, M. Bickermann

Leibniz Institute for Crystal Growth, Max-Born-Strasse 2, 12489 Berlin, Germany Growth of SrTiO3 bulk crystals by the EFG method

25. J. Polák, M. Klejch, K. Bartoš, J. Houžvička CRYTUR spol. s r.o., Palackého 175, 511 01 Turnov, Czech Republic EFG method for novel materials development

26. M. Pillaca1, W. Miller2, P. Gille1 1 Ludwig-Maximilians-Universität München, 80333 München, Germany 2 Leibniz Institute for Crystal Growth (IKZ), 12489 Berlin, Germany Inclined Rotary Bridgman method for growing Sb-based binary compounds

27. J. Schwerin1, D. Müller1, U. Burkhardt2, P. Simon2, Yu. Grin2, P. Gille1 1 Ludwig-Maximilians-Universität München, 80333 München, Germany 2 Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Straße 40, 01187 Dresden Ga3Pd5 lamellas in large GaPd2 single crystals

28. P. Meisner1, A. Thum1, U. Wunderwald1, J. Friedrich1,2 1 Fraunhofer THM, 09599 Freiberg, Germany 2 Fraunhofer IISB, 91058 Erlangen, Germany Deposition of metastable manganese dioxide films using PLD technique

29. C. Klein, F. Ritter, C. Krellner Physikalisches Institut, Goethe-Universität, 60438 Frankfurt Synthesis and crystal growth of Cu-based kagome materials

30. S. Witt, K. Kliemt, C. Butzke, C. Krellner Physikalisches Institut, Goethe-Universität, 60438 Frankfurt ACRT technique for the single crystal growth of the heavy fermion compound YbRh2Si2

31. N. van Well1,2, P. Puphal1, B. Wehinger2,3, M. Kubus2,4, D. Chernyshov5, D. Sheptya-kov2, F. Ritter1, J. Schefer2, Ch. Rüegg2,3, W. Assmus1 1 Physikalisches Institut, Goethe-Universität Frankfurt, 60438 Frankfurt, Germany 2 Paul Scherrer Institute, CH-5232 Villigen, Switzerland 3 University of Geneva, CH-1211 Geneva, Switzerland 4 University of Bern, CH-3012 Bern, Switzerland 5 Swiss-Norwegian Beam Lines at the European Synchrotron Radiation Facility, Gre-noble, France Influence of the oxygen concentration on crystal growth and structure of the BaCu-Si2O6±δ and Ba1-xSrxCuSi2O6±δ spin dimer compounds

32. A. Dorantes, A. Alshemi, M. Kartsovnik, A. Erb Walther-Meißner Institut, Bayerische Akademie der Wissenschaften, Walther-Meißner-Strasse 8, 85748 Garching, Germany Magnetic properties of high quality single crystals of the electron-underdoped cuprate superconductor Nd2‑xCexCuO4

Wednesday, March 16

10:00 Opening Ceremony

Session 1: Czochralski

10:15 R. Uecker (Invited) 10:45 A. Mühe (Invited) 11:15 S. Eichler (Invited) 11:45 M. Klejch (Invited)

12:15 Lunch Break

Session 2: Silicon

14:00 Y. Pichon (Invited) 14:30 L. Stockmeier 14:50 K. Dadzis 15:10 I. Kupka 15:30 C. Ehlers

15:50 Coffee Break

Session 3: Advanced epitaxy

16:30 E. Hulicius (Invited) 17:00 B. Kunert (Invited)

DGKK-Young Scientist Award

17:30 O. Supplie (Invited)

18:30 Break

19:00 DGKK General Assembly

Thursday, March 17

Session 4: Oxides and intermetallics

08:20 S. Wurmehl (Invited) 08:50 J. Pejchal (Invited) 09:20 F. Kamutzki 09:40 P. Sass 10:00 K. Kliemt

10:20 Coffee Break

Session 5: Sensors & characterization

10:50 N. Neumann (Invited) 11:20 C. Guguschev 11:40 M. Herms 12:00 N. Schüler 12:20 M. Knetzger

12:40 Lunch Break

Session 6: GaN

14:00 J. Würfl (Invited) 14:30 S. Besendörfer 14:50 B. Mitrovic (Invited) 15:20 M. Heuken 15:40 R. Niewa (Invited) 16:10 S. Schimmel

16:30 Poster Session

19:30 Conference Dinner

Friday, March 18

Session 7: Fundamentals

08:20 Z. Kožíšek (Invited) 08:50 S. Brandon (Invited) 09:20 D. Meier 09:40 J. Pal 10:00 R. Král

10:20 Coffee Break

Session 8: µg & SiC

10:50 T. Sorgenfrei 11:10 M. Fiederle 11:30 P. Schuh 11:50 F. Wischmeyer 12:10 J. Erlekampf

12:30 Lunch Break

Session 9: Functional thin films

14:00 A. Kromka (Invited) 14:30 J. Cajzl 14:50 K. Rubesova (Invited) 15:20 J. Grym

15:40 Closing Ceremony

16:00 End of GCCCG-1/DKT2016

GC

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March 16 - 18, 2016, D

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