fundamentals of nanoelectronics: basic concepts

Member of the Helmholtz Association

Slawomir Prucnal| HZDR | wwwhzdrde FWIZ Seminar 13112014

Fundamentals of

Nanoelectronics

Basic Concepts

Sławomir Prucnal

FWIM

Member of the Helmholtz Association Page 2


Outline

bull Introduction

bull Electronics in nanoscale

ndash Transport

ndash Ohms law

bull Optoelectronic properties of

semiconductors

bull Optics in nanoscale

ndash Band gap

ndash Quantum confinement effect



httpdownloadintelcomnewsroomkitschipmakingpdfsSand-to-Silicon_22nm-Versionpdf

Silicon wafer

Photolithography

Ion implantation

Etching

Temporary Gate

Formation

metalization



Introduction

NEAR-TERM 2013-2020 Scaling of Si CMOS - Implementation of fully depleted SOI

Implementation of high-mobility CMOS channel materials

httpwwwitrsnetLinks2013ITRSHome2013htm



Introduction

From Wikipedia

SmartCut

SIMOX process

SOI



Introduction

(Source Synopsys)

httpwwwgoogledeimgresimgurl=httpwwwtechdesignforumscompracticefiles201305tdf-snpspvff-fdsoi-3lrgjpgampimgrefurl=http wwwtechdesignforumscompractice techniquephysical-verification-design-finfet-fd-soi amph=532ampw=980amptbnid=bG2T-9aazoPmjMamptbnh=90amptbnw=166ampusg=__3fSXT57run64yrsHWP2cDxmXjfs=ampdocid=9ZIFDJ9SQcwv AMampsa=Xampved=0CEAQ9QEwBWoVChMIrqu3kfrAxwIVw7kUCh3DKQn5

Silicon wafer

httpswwwyoutubecomwatchv=ZvQMC7qL2B8



Introduction

(Source Synopsys)




Introduction

Benefits Challanges

reduction in power consumption (~50 over 32nm)

Very restrictive design options

Faster switching speed Fin width variability and edge quality leads to variability in threshold voltage VT

Availability of strain engineering Extra manufacturing complexity and expense

The main manufacturing challenges for finFETs (above 20 nm) are - controlling the etch along the edges - uniform doping of 3D surfaces - Deposition of all the films used in the gate stack



The top silicon layer is typically between 50 and 90 nmthick Silicon under the channel is partially depleted of mobile charge carriers

The top silicon layer is between 5 and 20 nm thick typically frac14 of the gate length Silicon under the gate is fully depleted of mobile charge carriers There is no floating body effect

Fully depleted silicon-on-insulator FD-SOI vs PD-SOI



10

Benefits Challanges

Significant reduction in power consumption below 11 nm

High cost of initial wafers

Faster switching speed Variability in VT due to variations in the thickness of silicon thin-film

Easier standard manufacturing process No strain engineering possible

Availability of back-biasing to control VT

No doping variability

Fully depleted silicon-on-insulator FD-SOI (below 14 nm)

Introduction



Introduction



LONG-TERM 2021-2028 Implementation of advanced multi-gate structuresmdash ultra-thin

body multi-gate MOSFETs




Multi-gate structures

httpwwwgoogledeimgresimgurl=http3A2F2Fwwwfz-juelichde2FSharedDocs2FBilder2FPGI2FPGI-92FEN2FForschung2FNanowires2FMultigatMOSFET jpg253F __blob253Dnormalampimgrefurl=http3A2F2Fwwwfz-juelichde2Fpgi2Fpgi-92FDE2FForschung2F05-Si-Nano-MOSFET2F01-Multigate2520nanowire2F_nodehtmlamph= 336ampw=600amptbnid=4kA-VMzzxXDUlM3Aampdocid=ZqBKi7JKfbji2Mampei=OrjaVbjkF4n0ULaHjdAEamptbm=ischampiact=rcampuact=3ampdur=2146amppage=1ampstart=0ampndsp=30ampved=0CHQQrQMw GmoVChMIuOnjrIrBxwIVCToUCh22QwNK



httpwwwsecgovArchivesedgardata937966000119312514331751g784347page_012jpg




Hybrid 1D and 3D nanostructures

AFM topography of annealed and etched

sample

Room temperature semi-logarithmic I-V

characteristic of n-InAsp-Si heterojunction

Prucnal et al Nanolett 11 2814 (2011)



InAs







GeOI for junctionless transistors

00 05 10 15 2010

-11

10-10

10-9

10-8

50x50x3000 nm

H x W x L

Cu

rre

nt (A

)

Voltage (V)

100 nm Ge

50 nm Ge

100x100x3000 nm

H x W x L



Electronic transport



length scale transistor density

1 mm = 1m1000

1 mm = 1mm1000

1 nm = 1mm1000 Atomic distance lt 1 nm

1985 rarr 10 mm channel length

2010 rarr lt 100 nm

2015 rarr lt 20 nm

For the channel length of 10 mm size

of transisotr is 100 mm

3 cm

3 c

m

300

300

105




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm

For the channel length of 100 nm size


3 cm

3 c

m

30000

30000

109




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm


of transisotr is 200 nm

3 cm

3 c

m

150000

15

00

00

109 times 25



length scaleelectronic transport

1 mm = 1m1000

1 mm = 1mm1000


S D Channel

Vo I

119933

119920=R

R determines OnOff state and is controlled by 3rd terminal

- + 1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Diffusive transport




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Ballistic transport



length scale Ohms law

S D Channel

Vo I

R=r119923

119912 Lrarr 120782119929 rarr 120782119929 =

119945

119954120784=25kWfor ballistic transport

119933

119920=R

- +

~mm ~nm

S D Channel

L W

Vo I + -

119933

119920=R=

120646

119934119923 119933

119920=R=

120646

119934(119923 +119950119942119938119951119943119955119942119942119953119938119957119945)




G Jo et al J Appl Phys 102 084508 (2007)



Mobility



length scale mobility




F Gaacutemiz 2004 Semicond Sci Technol 19 113

Ballistic transport

Diffusive transport




Patrick S Goley and Mantu K Hudait Materials 2014 7(3) 2301-2339




Xiao Yu et all ECS Solid State Lett 4 P15 (2015)

1014

1015

1019

0

100

200

300

400

500 Electron mobility

for 50 nm Ge

Mobili

ty c

m2V

s

Carrier concentration (cm-3)

SmartCut

GeOI

Epi-Ge

University of Tokyo PECVD+FLA

HZDR

20x1018

40x1018

60x1018

80x1018

10x1019

0

25

50

75

100

125

150

175

200


Mo

bili

ty c

m2V

s

PECVD+FLA

HZDREpi-Ge

University of Tokyo

SmartCut

GeOI

hole mobility

for 50 nm Ge

Preliminary data

Carrier mobility vs Carrier concentration in 50 nm thick Ge on insulator



Downscaling

httpswwwyoutubecomwatchv=v2gDMj42sIM



Optoelectronic properties of semiconductors

Douglas J Paul Semicond Sci Technol 19 R75-R108 (2004)




IEEE TRANSACTIONS ON ELECTRON DEVICES VOL 55 NO 1 JANUARY 2008



Optical properties of semiconductors




(a) Direct-bandgap semiconductors such as GaAs InP and GaN (b) An indirect-bandgap semiconductor such as silicon or germanium

kne0 k=0







Jia-Zhi Chen et al Opt Mater Express 4 1178-1185 (2014)

Direct bandgap energies of unstrained Ge1minus xSnx alloys (a) and calculated band edges of the

various bands for pseudomorphic Ge1minus xSnx alloys on Ge as a function of Sn composition

Ge with direct bandgap




Schematic of the effect of quantum confinement on the electronic structure of a semiconductor The arrows indicate the lowest energy absorption transition (a) Bulk semiconductor CB = conduction band VB = valence band) (b) Three lowest electron (Enle ) and hole (Enlh ) energy levels in a quantum dot The corresponding wave functions are represented by dashed lines (c) Semiconductor nanocrystal (quantum dot)




(a) Three lowest electron (Enle ) and hole (Enlh ) energy levels in a semiconductor nanocrystal quantum dot The corresponding wave functions are represented by the dashed lines Allowed optical transitions are given by the arrows (b) Assignment of the transitions in the absorption spectrum of colloidal CdTe quantum dots




Eg= band gap energy of bulk semiconductor

R = radius of quantum dot

me= effective mass of excited electron

mh= effective mass of excited hole

h = Planckrsquos constant

Energy of photons emitted by QDs










CdS QD

1 Experimental data

2 calculation










Advanced Biomedical Engineering book edited by Gaetano D Gargiulo Co-editor Alistair McEwan ISBN 978-953-307-555-6




Schematic representation of the quantum

confinement effect on the energy level structure of

a semiconductor material

Celso de Mello Donegaacute Chem Soc Rev 40 1512-1546 (2011)

119886119887 = 120634119898

120699119886119887

ab =0053 nm ndash dielectric constant

m ndash electron mass

m ndash effective electron mass

Bohr radius for semiconductors



Questions



Outline

bull Introduction

bull Electronics in nanoscale

ndash Transport

ndash Ohms law

bull Optoelectronic properties of

semiconductors

bull Optics in nanoscale

ndash Band gap

ndash Quantum confinement effect




Silicon wafer

Photolithography

Ion implantation

Etching

Temporary Gate

Formation

metalization



Introduction






Introduction

From Wikipedia

SmartCut

SIMOX process

SOI



Introduction

(Source Synopsys)


Silicon wafer




Introduction

(Source Synopsys)




Introduction

Benefits Challanges













10

Benefits Challanges








Introduction



Introduction


















sample






InAs








00 05 10 15 2010

-11

10-10

10-9

10-8

50x50x3000 nm

H x W x L

Cu

rre

nt (A

)

Voltage (V)

100 nm Ge

50 nm Ge

100x100x3000 nm

H x W x L







1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

300

300

105




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

30000

30000

109




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

150000

15

00

00

109 times 25




1 mm = 1m1000

1 mm = 1mm1000


S D Channel

Vo I

119933

119920=R


- + 1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Diffusive transport




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Ballistic transport




S D Channel

Vo I

R=r119923

119912 Lrarr 120782119929 rarr 120782119929 =

119945


119933

119920=R

- +

~mm ~nm

S D Channel

L W

Vo I + -

119933

119920=R=

120646

119934119923 119933

119920=R=

120646

119934(119923 +119950119942119938119951119943119955119942119942119953119938119957119945)







Mobility








Ballistic transport

Diffusive transport









1014

1015

1019

0

100

200

300

400


for 50 nm Ge

Mobili

ty c

m2V

s


SmartCut

GeOI

Epi-Ge


HZDR

20x1018

40x1018

60x1018

80x1018

10x1019

0

25

50

75

100

125

150

175

200


Mo

bili

ty c

m2V

s

PECVD+FLA

HZDREpi-Ge

University of Tokyo

SmartCut

GeOI

hole mobility

for 50 nm Ge

Preliminary data




Downscaling

















kne0 k=0





































CdS QD

1 Experimental data

2 calculation


















119886119887 = 120634119898

120699119886119887







Questions




Silicon wafer

Photolithography

Ion implantation

Etching

Temporary Gate

Formation

metalization



Introduction






Introduction

From Wikipedia

SmartCut

SIMOX process

SOI



Introduction

(Source Synopsys)


Silicon wafer




Introduction

(Source Synopsys)




Introduction

Benefits Challanges













10

Benefits Challanges








Introduction



Introduction


















sample






InAs








00 05 10 15 2010

-11

10-10

10-9

10-8

50x50x3000 nm

H x W x L

Cu

rre

nt (A

)

Voltage (V)

100 nm Ge

50 nm Ge

100x100x3000 nm

H x W x L







1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

300

300

105




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

30000

30000

109




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

150000

15

00

00

109 times 25




1 mm = 1m1000

1 mm = 1mm1000


S D Channel

Vo I

119933

119920=R


- + 1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Diffusive transport




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Ballistic transport




S D Channel

Vo I

R=r119923

119912 Lrarr 120782119929 rarr 120782119929 =

119945


119933

119920=R

- +

~mm ~nm

S D Channel

L W

Vo I + -

119933

119920=R=

120646

119934119923 119933

119920=R=

120646

119934(119923 +119950119942119938119951119943119955119942119942119953119938119957119945)







Mobility








Ballistic transport

Diffusive transport









1014

1015

1019

0

100

200

300

400


for 50 nm Ge

Mobili

ty c

m2V

s


SmartCut

GeOI

Epi-Ge


HZDR

20x1018

40x1018

60x1018

80x1018

10x1019

0

25

50

75

100

125

150

175

200


Mo

bili

ty c

m2V

s

PECVD+FLA

HZDREpi-Ge

University of Tokyo

SmartCut

GeOI

hole mobility

for 50 nm Ge

Preliminary data




Downscaling

















kne0 k=0





































CdS QD

1 Experimental data

2 calculation


















119886119887 = 120634119898

120699119886119887







Questions



Introduction






Introduction

From Wikipedia

SmartCut

SIMOX process

SOI



Introduction

(Source Synopsys)


Silicon wafer




Introduction

(Source Synopsys)




Introduction

Benefits Challanges













10

Benefits Challanges








Introduction



Introduction


















sample






InAs








00 05 10 15 2010

-11

10-10

10-9

10-8

50x50x3000 nm

H x W x L

Cu

rre

nt (A

)

Voltage (V)

100 nm Ge

50 nm Ge

100x100x3000 nm

H x W x L







1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

300

300

105




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

30000

30000

109




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

150000

15

00

00

109 times 25




1 mm = 1m1000

1 mm = 1mm1000


S D Channel

Vo I

119933

119920=R


- + 1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Diffusive transport




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Ballistic transport




S D Channel

Vo I

R=r119923

119912 Lrarr 120782119929 rarr 120782119929 =

119945


119933

119920=R

- +

~mm ~nm

S D Channel

L W

Vo I + -

119933

119920=R=

120646

119934119923 119933

119920=R=

120646

119934(119923 +119950119942119938119951119943119955119942119942119953119938119957119945)







Mobility








Ballistic transport

Diffusive transport









1014

1015

1019

0

100

200

300

400


for 50 nm Ge

Mobili

ty c

m2V

s


SmartCut

GeOI

Epi-Ge


HZDR

20x1018

40x1018

60x1018

80x1018

10x1019

0

25

50

75

100

125

150

175

200


Mo

bili

ty c

m2V

s

PECVD+FLA

HZDREpi-Ge

University of Tokyo

SmartCut

GeOI

hole mobility

for 50 nm Ge

Preliminary data




Downscaling

















kne0 k=0





































CdS QD

1 Experimental data

2 calculation


















119886119887 = 120634119898

120699119886119887







Questions



Introduction

From Wikipedia

SmartCut

SIMOX process

SOI



Introduction

(Source Synopsys)


Silicon wafer




Introduction

(Source Synopsys)




Introduction

Benefits Challanges













10

Benefits Challanges








Introduction



Introduction


















sample






InAs








00 05 10 15 2010

-11

10-10

10-9

10-8

50x50x3000 nm

H x W x L

Cu

rre

nt (A

)

Voltage (V)

100 nm Ge

50 nm Ge

100x100x3000 nm

H x W x L







1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

300

300

105




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

30000

30000

109




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

150000

15

00

00

109 times 25




1 mm = 1m1000

1 mm = 1mm1000


S D Channel

Vo I

119933

119920=R


- + 1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Diffusive transport




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Ballistic transport




S D Channel

Vo I

R=r119923

119912 Lrarr 120782119929 rarr 120782119929 =

119945


119933

119920=R

- +

~mm ~nm

S D Channel

L W

Vo I + -

119933

119920=R=

120646

119934119923 119933

119920=R=

120646

119934(119923 +119950119942119938119951119943119955119942119942119953119938119957119945)







Mobility








Ballistic transport

Diffusive transport









1014

1015

1019

0

100

200

300

400


for 50 nm Ge

Mobili

ty c

m2V

s


SmartCut

GeOI

Epi-Ge


HZDR

20x1018

40x1018

60x1018

80x1018

10x1019

0

25

50

75

100

125

150

175

200


Mo

bili

ty c

m2V

s

PECVD+FLA

HZDREpi-Ge

University of Tokyo

SmartCut

GeOI

hole mobility

for 50 nm Ge

Preliminary data




Downscaling

















kne0 k=0





































CdS QD

1 Experimental data

2 calculation


















119886119887 = 120634119898

120699119886119887







Questions



Introduction

(Source Synopsys)


Silicon wafer




Introduction

(Source Synopsys)




Introduction

Benefits Challanges













10

Benefits Challanges








Introduction



Introduction


















sample






InAs








00 05 10 15 2010

-11

10-10

10-9

10-8

50x50x3000 nm

H x W x L

Cu

rre

nt (A

)

Voltage (V)

100 nm Ge

50 nm Ge

100x100x3000 nm

H x W x L







1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

300

300

105




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

30000

30000

109




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

150000

15

00

00

109 times 25




1 mm = 1m1000

1 mm = 1mm1000


S D Channel

Vo I

119933

119920=R


- + 1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Diffusive transport




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Ballistic transport




S D Channel

Vo I

R=r119923

119912 Lrarr 120782119929 rarr 120782119929 =

119945


119933

119920=R

- +

~mm ~nm

S D Channel

L W

Vo I + -

119933

119920=R=

120646

119934119923 119933

119920=R=

120646

119934(119923 +119950119942119938119951119943119955119942119942119953119938119957119945)







Mobility








Ballistic transport

Diffusive transport









1014

1015

1019

0

100

200

300

400


for 50 nm Ge

Mobili

ty c

m2V

s


SmartCut

GeOI

Epi-Ge


HZDR

20x1018

40x1018

60x1018

80x1018

10x1019

0

25

50

75

100

125

150

175

200


Mo

bili

ty c

m2V

s

PECVD+FLA

HZDREpi-Ge

University of Tokyo

SmartCut

GeOI

hole mobility

for 50 nm Ge

Preliminary data




Downscaling

















kne0 k=0





































CdS QD

1 Experimental data

2 calculation


















119886119887 = 120634119898

120699119886119887







Questions



Introduction

(Source Synopsys)




Introduction

Benefits Challanges













10

Benefits Challanges








Introduction



Introduction


















sample






InAs








00 05 10 15 2010

-11

10-10

10-9

10-8

50x50x3000 nm

H x W x L

Cu

rre

nt (A

)

Voltage (V)

100 nm Ge

50 nm Ge

100x100x3000 nm

H x W x L







1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

300

300

105




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

30000

30000

109




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

150000

15

00

00

109 times 25




1 mm = 1m1000

1 mm = 1mm1000


S D Channel

Vo I

119933

119920=R


- + 1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Diffusive transport




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Ballistic transport




S D Channel

Vo I

R=r119923

119912 Lrarr 120782119929 rarr 120782119929 =

119945


119933

119920=R

- +

~mm ~nm

S D Channel

L W

Vo I + -

119933

119920=R=

120646

119934119923 119933

119920=R=

120646

119934(119923 +119950119942119938119951119943119955119942119942119953119938119957119945)







Mobility








Ballistic transport

Diffusive transport









1014

1015

1019

0

100

200

300

400


for 50 nm Ge

Mobili

ty c

m2V

s


SmartCut

GeOI

Epi-Ge


HZDR

20x1018

40x1018

60x1018

80x1018

10x1019

0

25

50

75

100

125

150

175

200


Mo

bili

ty c

m2V

s

PECVD+FLA

HZDREpi-Ge

University of Tokyo

SmartCut

GeOI

hole mobility

for 50 nm Ge

Preliminary data




Downscaling

















kne0 k=0





































CdS QD

1 Experimental data

2 calculation


















119886119887 = 120634119898

120699119886119887







Questions



Introduction

Benefits Challanges













10

Benefits Challanges








Introduction



Introduction


















sample






InAs








00 05 10 15 2010

-11

10-10

10-9

10-8

50x50x3000 nm

H x W x L

Cu

rre

nt (A

)

Voltage (V)

100 nm Ge

50 nm Ge

100x100x3000 nm

H x W x L







1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

300

300

105




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

30000

30000

109




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

150000

15

00

00

109 times 25




1 mm = 1m1000

1 mm = 1mm1000


S D Channel

Vo I

119933

119920=R


- + 1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Diffusive transport




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Ballistic transport




S D Channel

Vo I

R=r119923

119912 Lrarr 120782119929 rarr 120782119929 =

119945


119933

119920=R

- +

~mm ~nm

S D Channel

L W

Vo I + -

119933

119920=R=

120646

119934119923 119933

119920=R=

120646

119934(119923 +119950119942119938119951119943119955119942119942119953119938119957119945)







Mobility








Ballistic transport

Diffusive transport









1014

1015

1019

0

100

200

300

400


for 50 nm Ge

Mobili

ty c

m2V

s


SmartCut

GeOI

Epi-Ge


HZDR

20x1018

40x1018

60x1018

80x1018

10x1019

0

25

50

75

100

125

150

175

200


Mo

bili

ty c

m2V

s

PECVD+FLA

HZDREpi-Ge

University of Tokyo

SmartCut

GeOI

hole mobility

for 50 nm Ge

Preliminary data




Downscaling

















kne0 k=0





































CdS QD

1 Experimental data

2 calculation


















119886119887 = 120634119898

120699119886119887







Questions








10

Benefits Challanges








Introduction



Introduction


















sample






InAs








00 05 10 15 2010

-11

10-10

10-9

10-8

50x50x3000 nm

H x W x L

Cu

rre

nt (A

)

Voltage (V)

100 nm Ge

50 nm Ge

100x100x3000 nm

H x W x L







1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

300

300

105




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

30000

30000

109




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

150000

15

00

00

109 times 25




1 mm = 1m1000

1 mm = 1mm1000


S D Channel

Vo I

119933

119920=R


- + 1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Diffusive transport




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Ballistic transport




S D Channel

Vo I

R=r119923

119912 Lrarr 120782119929 rarr 120782119929 =

119945


119933

119920=R

- +

~mm ~nm

S D Channel

L W

Vo I + -

119933

119920=R=

120646

119934119923 119933

119920=R=

120646

119934(119923 +119950119942119938119951119943119955119942119942119953119938119957119945)







Mobility








Ballistic transport

Diffusive transport









1014

1015

1019

0

100

200

300

400


for 50 nm Ge

Mobili

ty c

m2V

s


SmartCut

GeOI

Epi-Ge


HZDR

20x1018

40x1018

60x1018

80x1018

10x1019

0

25

50

75

100

125

150

175

200


Mo

bili

ty c

m2V

s

PECVD+FLA

HZDREpi-Ge

University of Tokyo

SmartCut

GeOI

hole mobility

for 50 nm Ge

Preliminary data




Downscaling

















kne0 k=0





































CdS QD

1 Experimental data

2 calculation


















119886119887 = 120634119898

120699119886119887







Questions



Introduction


















sample






InAs








00 05 10 15 2010

-11

10-10

10-9

10-8

50x50x3000 nm

H x W x L

Cu

rre

nt (A

)

Voltage (V)

100 nm Ge

50 nm Ge

100x100x3000 nm

H x W x L







1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

300

300

105




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

30000

30000

109




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

150000

15

00

00

109 times 25




1 mm = 1m1000

1 mm = 1mm1000


S D Channel

Vo I

119933

119920=R


- + 1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Diffusive transport




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Ballistic transport




S D Channel

Vo I

R=r119923

119912 Lrarr 120782119929 rarr 120782119929 =

119945


119933

119920=R

- +

~mm ~nm

S D Channel

L W

Vo I + -

119933

119920=R=

120646

119934119923 119933

119920=R=

120646

119934(119923 +119950119942119938119951119943119955119942119942119953119938119957119945)







Mobility








Ballistic transport

Diffusive transport









1014

1015

1019

0

100

200

300

400


for 50 nm Ge

Mobili

ty c

m2V

s


SmartCut

GeOI

Epi-Ge


HZDR

20x1018

40x1018

60x1018

80x1018

10x1019

0

25

50

75

100

125

150

175

200


Mo

bili

ty c

m2V

s

PECVD+FLA

HZDREpi-Ge

University of Tokyo

SmartCut

GeOI

hole mobility

for 50 nm Ge

Preliminary data




Downscaling

















kne0 k=0





































CdS QD

1 Experimental data

2 calculation


















119886119887 = 120634119898

120699119886119887







Questions













sample






InAs








00 05 10 15 2010

-11

10-10

10-9

10-8

50x50x3000 nm

H x W x L

Cu

rre

nt (A

)

Voltage (V)

100 nm Ge

50 nm Ge

100x100x3000 nm

H x W x L







1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

300

300

105




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

30000

30000

109




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

150000

15

00

00

109 times 25




1 mm = 1m1000

1 mm = 1mm1000


S D Channel

Vo I

119933

119920=R


- + 1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Diffusive transport




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Ballistic transport




S D Channel

Vo I

R=r119923

119912 Lrarr 120782119929 rarr 120782119929 =

119945


119933

119920=R

- +

~mm ~nm

S D Channel

L W

Vo I + -

119933

119920=R=

120646

119934119923 119933

119920=R=

120646

119934(119923 +119950119942119938119951119943119955119942119942119953119938119957119945)







Mobility








Ballistic transport

Diffusive transport









1014

1015

1019

0

100

200

300

400


for 50 nm Ge

Mobili

ty c

m2V

s


SmartCut

GeOI

Epi-Ge


HZDR

20x1018

40x1018

60x1018

80x1018

10x1019

0

25

50

75

100

125

150

175

200


Mo

bili

ty c

m2V

s

PECVD+FLA

HZDREpi-Ge

University of Tokyo

SmartCut

GeOI

hole mobility

for 50 nm Ge

Preliminary data




Downscaling

















kne0 k=0





































CdS QD

1 Experimental data

2 calculation


















119886119887 = 120634119898

120699119886119887







Questions



InAs








00 05 10 15 2010

-11

10-10

10-9

10-8

50x50x3000 nm

H x W x L

Cu

rre

nt (A

)

Voltage (V)

100 nm Ge

50 nm Ge

100x100x3000 nm

H x W x L







1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

300

300

105




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

30000

30000

109




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

150000

15

00

00

109 times 25




1 mm = 1m1000

1 mm = 1mm1000


S D Channel

Vo I

119933

119920=R


- + 1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Diffusive transport




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Ballistic transport




S D Channel

Vo I

R=r119923

119912 Lrarr 120782119929 rarr 120782119929 =

119945


119933

119920=R

- +

~mm ~nm

S D Channel

L W

Vo I + -

119933

119920=R=

120646

119934119923 119933

119920=R=

120646

119934(119923 +119950119942119938119951119943119955119942119942119953119938119957119945)







Mobility








Ballistic transport

Diffusive transport









1014

1015

1019

0

100

200

300

400


for 50 nm Ge

Mobili

ty c

m2V

s


SmartCut

GeOI

Epi-Ge


HZDR

20x1018

40x1018

60x1018

80x1018

10x1019

0

25

50

75

100

125

150

175

200


Mo

bili

ty c

m2V

s

PECVD+FLA

HZDREpi-Ge

University of Tokyo

SmartCut

GeOI

hole mobility

for 50 nm Ge

Preliminary data




Downscaling

















kne0 k=0





































CdS QD

1 Experimental data

2 calculation


















119886119887 = 120634119898

120699119886119887







Questions







00 05 10 15 2010

-11

10-10

10-9

10-8

50x50x3000 nm

H x W x L

Cu

rre

nt (A

)

Voltage (V)

100 nm Ge

50 nm Ge

100x100x3000 nm

H x W x L







1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

300

300

105




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

30000

30000

109




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

150000

15

00

00

109 times 25




1 mm = 1m1000

1 mm = 1mm1000


S D Channel

Vo I

119933

119920=R


- + 1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Diffusive transport




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Ballistic transport




S D Channel

Vo I

R=r119923

119912 Lrarr 120782119929 rarr 120782119929 =

119945


119933

119920=R

- +

~mm ~nm

S D Channel

L W

Vo I + -

119933

119920=R=

120646

119934119923 119933

119920=R=

120646

119934(119923 +119950119942119938119951119943119955119942119942119953119938119957119945)







Mobility








Ballistic transport

Diffusive transport









1014

1015

1019

0

100

200

300

400


for 50 nm Ge

Mobili

ty c

m2V

s


SmartCut

GeOI

Epi-Ge


HZDR

20x1018

40x1018

60x1018

80x1018

10x1019

0

25

50

75

100

125

150

175

200


Mo

bili

ty c

m2V

s

PECVD+FLA

HZDREpi-Ge

University of Tokyo

SmartCut

GeOI

hole mobility

for 50 nm Ge

Preliminary data




Downscaling

















kne0 k=0





































CdS QD

1 Experimental data

2 calculation


















119886119887 = 120634119898

120699119886119887







Questions







1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

300

300

105




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

30000

30000

109




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

150000

15

00

00

109 times 25




1 mm = 1m1000

1 mm = 1mm1000


S D Channel

Vo I

119933

119920=R


- + 1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Diffusive transport




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Ballistic transport




S D Channel

Vo I

R=r119923

119912 Lrarr 120782119929 rarr 120782119929 =

119945


119933

119920=R

- +

~mm ~nm

S D Channel

L W

Vo I + -

119933

119920=R=

120646

119934119923 119933

119920=R=

120646

119934(119923 +119950119942119938119951119943119955119942119942119953119938119957119945)







Mobility








Ballistic transport

Diffusive transport









1014

1015

1019

0

100

200

300

400


for 50 nm Ge

Mobili

ty c

m2V

s


SmartCut

GeOI

Epi-Ge


HZDR

20x1018

40x1018

60x1018

80x1018

10x1019

0

25

50

75

100

125

150

175

200


Mo

bili

ty c

m2V

s

PECVD+FLA

HZDREpi-Ge

University of Tokyo

SmartCut

GeOI

hole mobility

for 50 nm Ge

Preliminary data




Downscaling

















kne0 k=0





































CdS QD

1 Experimental data

2 calculation


















119886119887 = 120634119898

120699119886119887







Questions




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

30000

30000

109




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

150000

15

00

00

109 times 25




1 mm = 1m1000

1 mm = 1mm1000


S D Channel

Vo I

119933

119920=R


- + 1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Diffusive transport




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Ballistic transport




S D Channel

Vo I

R=r119923

119912 Lrarr 120782119929 rarr 120782119929 =

119945


119933

119920=R

- +

~mm ~nm

S D Channel

L W

Vo I + -

119933

119920=R=

120646

119934119923 119933

119920=R=

120646

119934(119923 +119950119942119938119951119943119955119942119942119953119938119957119945)







Mobility








Ballistic transport

Diffusive transport









1014

1015

1019

0

100

200

300

400


for 50 nm Ge

Mobili

ty c

m2V

s


SmartCut

GeOI

Epi-Ge


HZDR

20x1018

40x1018

60x1018

80x1018

10x1019

0

25

50

75

100

125

150

175

200


Mo

bili

ty c

m2V

s

PECVD+FLA

HZDREpi-Ge

University of Tokyo

SmartCut

GeOI

hole mobility

for 50 nm Ge

Preliminary data




Downscaling

















kne0 k=0





































CdS QD

1 Experimental data

2 calculation


















119886119887 = 120634119898

120699119886119887







Questions




1 mm = 1m1000

1 mm = 1mm1000



2010 rarr lt 100 nm

2015 rarr lt 20 nm



3 cm

3 c

m

150000

15

00

00

109 times 25




1 mm = 1m1000

1 mm = 1mm1000


S D Channel

Vo I

119933

119920=R


- + 1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Diffusive transport




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Ballistic transport




S D Channel

Vo I

R=r119923

119912 Lrarr 120782119929 rarr 120782119929 =

119945


119933

119920=R

- +

~mm ~nm

S D Channel

L W

Vo I + -

119933

119920=R=

120646

119934119923 119933

119920=R=

120646

119934(119923 +119950119942119938119951119943119955119942119942119953119938119957119945)







Mobility








Ballistic transport

Diffusive transport









1014

1015

1019

0

100

200

300

400


for 50 nm Ge

Mobili

ty c

m2V

s


SmartCut

GeOI

Epi-Ge


HZDR

20x1018

40x1018

60x1018

80x1018

10x1019

0

25

50

75

100

125

150

175

200


Mo

bili

ty c

m2V

s

PECVD+FLA

HZDREpi-Ge

University of Tokyo

SmartCut

GeOI

hole mobility

for 50 nm Ge

Preliminary data




Downscaling

















kne0 k=0





































CdS QD

1 Experimental data

2 calculation


















119886119887 = 120634119898

120699119886119887







Questions




1 mm = 1m1000

1 mm = 1mm1000


S D Channel

Vo I

119933

119920=R


- + 1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Diffusive transport




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Ballistic transport




S D Channel

Vo I

R=r119923

119912 Lrarr 120782119929 rarr 120782119929 =

119945


119933

119920=R

- +

~mm ~nm

S D Channel

L W

Vo I + -

119933

119920=R=

120646

119934119923 119933

119920=R=

120646

119934(119923 +119950119942119938119951119943119955119942119942119953119938119957119945)







Mobility








Ballistic transport

Diffusive transport









1014

1015

1019

0

100

200

300

400


for 50 nm Ge

Mobili

ty c

m2V

s


SmartCut

GeOI

Epi-Ge


HZDR

20x1018

40x1018

60x1018

80x1018

10x1019

0

25

50

75

100

125

150

175

200


Mo

bili

ty c

m2V

s

PECVD+FLA

HZDREpi-Ge

University of Tokyo

SmartCut

GeOI

hole mobility

for 50 nm Ge

Preliminary data




Downscaling

















kne0 k=0





































CdS QD

1 Experimental data

2 calculation


















119886119887 = 120634119898

120699119886119887







Questions




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Diffusive transport




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Ballistic transport




S D Channel

Vo I

R=r119923

119912 Lrarr 120782119929 rarr 120782119929 =

119945


119933

119920=R

- +

~mm ~nm

S D Channel

L W

Vo I + -

119933

119920=R=

120646

119934119923 119933

119920=R=

120646

119934(119923 +119950119942119938119951119943119955119942119942119953119938119957119945)







Mobility








Ballistic transport

Diffusive transport









1014

1015

1019

0

100

200

300

400


for 50 nm Ge

Mobili

ty c

m2V

s


SmartCut

GeOI

Epi-Ge


HZDR

20x1018

40x1018

60x1018

80x1018

10x1019

0

25

50

75

100

125

150

175

200


Mo

bili

ty c

m2V

s

PECVD+FLA

HZDREpi-Ge

University of Tokyo

SmartCut

GeOI

hole mobility

for 50 nm Ge

Preliminary data




Downscaling

















kne0 k=0





































CdS QD

1 Experimental data

2 calculation


















119886119887 = 120634119898

120699119886119887







Questions




1 mm = 1m1000

1 mm = 1mm1000


1985 rarr 10 mm

2010 rarr lt 100 nm

2015 rarr lt 20 nm

S D

Channel

Vo I

e

e

- +

Ballistic transport




S D Channel

Vo I

R=r119923

119912 Lrarr 120782119929 rarr 120782119929 =

119945


119933

119920=R

- +

~mm ~nm

S D Channel

L W

Vo I + -

119933

119920=R=

120646

119934119923 119933

119920=R=

120646

119934(119923 +119950119942119938119951119943119955119942119942119953119938119957119945)







Mobility








Ballistic transport

Diffusive transport









1014

1015

1019

0

100

200

300

400


for 50 nm Ge

Mobili

ty c

m2V

s


SmartCut

GeOI

Epi-Ge


HZDR

20x1018

40x1018

60x1018

80x1018

10x1019

0

25

50

75

100

125

150

175

200


Mo

bili

ty c

m2V

s

PECVD+FLA

HZDREpi-Ge

University of Tokyo

SmartCut

GeOI

hole mobility

for 50 nm Ge

Preliminary data




Downscaling

















kne0 k=0





































CdS QD

1 Experimental data

2 calculation


















119886119887 = 120634119898

120699119886119887







Questions




S D Channel

Vo I

R=r119923

119912 Lrarr 120782119929 rarr 120782119929 =

119945


119933

119920=R

- +

~mm ~nm

S D Channel

L W

Vo I + -

119933

119920=R=

120646

119934119923 119933

119920=R=

120646

119934(119923 +119950119942119938119951119943119955119942119942119953119938119957119945)







Mobility








Ballistic transport

Diffusive transport









1014

1015

1019

0

100

200

300

400


for 50 nm Ge

Mobili

ty c

m2V

s


SmartCut

GeOI

Epi-Ge


HZDR

20x1018

40x1018

60x1018

80x1018

10x1019

0

25

50

75

100

125

150

175

200


Mo

bili

ty c

m2V

s

PECVD+FLA

HZDREpi-Ge

University of Tokyo

SmartCut

GeOI

hole mobility

for 50 nm Ge

Preliminary data




Downscaling

















kne0 k=0





































CdS QD

1 Experimental data

2 calculation


















119886119887 = 120634119898

120699119886119887







Questions







Mobility








Ballistic transport

Diffusive transport









1014

1015

1019

0

100

200

300

400


for 50 nm Ge

Mobili

ty c

m2V

s


SmartCut

GeOI

Epi-Ge


HZDR

20x1018

40x1018

60x1018

80x1018

10x1019

0

25

50

75

100

125

150

175

200


Mo

bili

ty c

m2V

s

PECVD+FLA

HZDREpi-Ge

University of Tokyo

SmartCut

GeOI

hole mobility

for 50 nm Ge

Preliminary data




Downscaling

















kne0 k=0





































CdS QD

1 Experimental data

2 calculation


















119886119887 = 120634119898

120699119886119887







Questions








Ballistic transport

Diffusive transport









1014

1015

1019

0

100

200

300

400


for 50 nm Ge

Mobili

ty c

m2V

s


SmartCut

GeOI

Epi-Ge


HZDR

20x1018

40x1018

60x1018

80x1018

10x1019

0

25

50

75

100

125

150

175

200


Mo

bili

ty c

m2V

s

PECVD+FLA

HZDREpi-Ge

University of Tokyo

SmartCut

GeOI

hole mobility

for 50 nm Ge

Preliminary data




Downscaling

















kne0 k=0





































CdS QD

1 Experimental data

2 calculation


















119886119887 = 120634119898

120699119886119887







Questions









1014

1015

1019

0

100

200

300

400


for 50 nm Ge

Mobili

ty c

m2V

s


SmartCut

GeOI

Epi-Ge


HZDR

20x1018

40x1018

60x1018

80x1018

10x1019

0

25

50

75

100

125

150

175

200


Mo

bili

ty c

m2V

s

PECVD+FLA

HZDREpi-Ge

University of Tokyo

SmartCut

GeOI

hole mobility

for 50 nm Ge

Preliminary data




Downscaling

















kne0 k=0





































CdS QD

1 Experimental data

2 calculation


















119886119887 = 120634119898

120699119886119887







Questions



Downscaling

















kne0 k=0





































CdS QD

1 Experimental data

2 calculation


















119886119887 = 120634119898

120699119886119887







Questions
















kne0 k=0





































CdS QD

1 Experimental data

2 calculation


















119886119887 = 120634119898

120699119886119887







Questions





































CdS QD

1 Experimental data

2 calculation


















119886119887 = 120634119898

120699119886119887







Questions


















119886119887 = 120634119898

120699119886119887







Questions



Questions

fundamentals of nanoelectronics: basic concepts

Documents