fuji power semiconductors igbt/sic devices selection guide · igbt module production number i 300 x...

40
PrimePACK™ PAGE 19 T/I-type NPC 3-level PAGE 21 Small IPM PAGE 22 IPM PAGE 23 Hybrid SiC Module PAGE 27 Discrete IGBT PAGE 29 Rectifier Diode / SiC-SBD PAGE 30 Small PIM PAGE 8 PIM PAGE 9 6-Pack PAGE 11 Standard 2-Pack PAGE 13 Standard 1-Pack/ Chopper PAGE 15 High Power Module PAGE 17 Note: PrimePACK™ is registered trademark of Infineon Technologies AG, Germany. FUJI Power Semiconductors IGBT / SiC Devices Selection Guide 25A2-E-0005b

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Page 1: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

PrimePACK™PAGE

19

T/I-typeNPC 3-level

PAGE

21 Small IPMPAGE

22 IPMPAGE

23 Hybrid SiC Module PAGE

27 Discrete IGBTPAGE

29Rectifier Diode /SiC-SBD

PAGE

30

Small PIMPAGE

8 PIMPAGE

9 6-PackPAGE

11 Standard 2-PackPAGE

13Standard 1-Pack/Chopper

PAGE

15 High Power ModulePAGE

17

Note: PrimePACK™ is registered trademark of Infineon Technologies AG, Germany.

FUJI Power Semiconductors

IGBT/SiC Devices Selection Guide

25A2-E-0005b

Page 2: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

1

Page 3: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

Number of IGBT SwitchesPage

Max VCE (VRRM) Rated Current

Products Category IGBT Module DiscreteIGBT Diode

DiscreteSiC-SBD 600V 650V 1200V 1700V 3300VStandard Module Power Integrated Module Intelligent Power Module

7 Small-PIM 8PIM EconoPIM™ 9

106 11

122 Standard 2-Pack 13

141 Standard 1-Pack 15

Chopper 151,2 High Speed Module 16

High Power Module 17,1819,20

4,12 T/I-type NPC 3-level 21 Reverse-Blocking IGBTs are integrated.6,7 IPM 22

23,242526

1,2,6,7 Hybrid SiC Module 27,281 Discrete IGBT 29– 30– SiC-SBD 30

Suffix 50 to 99 indicates RoHS compliance

Max VCE : 060 = 600V, 065 = 650V, 120 = 1200V, 170 = 1700V, 330 = 3300VPackage Type

IGBT Device Technology : X Series(7th Generation) / XR Series(7th Generation) V Series(6th Generation) / VW Series(6th Generation) U Series(5th Generation)

Rated current IC [A]

6 MBIGBT Module Production Number

I -300 X□…□ 120 - 50

Number of IGBT switches

Internal Configuration : I = Standard Module, R = Power Integrated Module, P = Intelligent Power ModuleIGBT Module type: MB = Si-IGBT+ Si-Diode, MS = Si-IGBT+ SiC-SBD, S = SiC-SBD

Diode Type: C or E = With Diode(Full rated), D = With Diode, Blank = Without DiodeSeries: W = High Speed W series, H = High Speed V series, V = V Series, RB = RB series

Max VCE : 60 = 600V, 65 = 650V, 120 = 1200VPolarity: N = N-ch

Rated Current IC [A]

F GDiscrete IGBT Production Number

W 50 N 65 W D

Company Code : Fuji

Package Type : W = TO-247-P or TO-247-P2, Z = TO-247-4-P2Device Code : G = IGBT

Diode Type: C = With Diode(Full rated), D = With Diode, Blank = Without DiodeMax VCE : 65 = 650V

Series:XS-XS seriesRated Current IC [A]

F G W 40 XS 65 C

Company Code : Fuji

Package Type : W = TO-247-P or TO-247-P2, Z = TO-247-4-P2Device Code : G = IGBT

Series: L = Ultra Fast Recovery, J = Soft/Fast RecoveryMax VRRM : 60 = 600V, 65 = 650V, 120 = 1200V

Cofiguration : C = Dual (Cathode common), S or T = SingleRated Current IF [A]

F DRRectifier Diode Production Number

W 50 C 65 L

Company Code : Fuji

Package Type : P = TO-220, W = TO-247-P2 or TO-247(2pin)-P2 or TO-247-2L-P2Device Code : DR = FWD

Max VRRM : 65 = 650V, 120 = 1200VCofiguration : C = Dual (Cathode common), S or T = Single

Rated Current IF [A]

F DCSiC Schottky-Barrier Diode Production Number

P 10 S 65

Company Code : Fuji

Package Type : A = TO-220F, C = T-Pack(s), P = TO-220, Y = TO-247, W = TO-247-2L-P2

Device Code : DC = SiC-SBD

2

Page 4: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

7MBR Ic IGBT series & Package type

Size PageV series X seriesSolder pins Solder pins

VW, VY XM□, XP□ XW□, XY□VB, VN, VR VX, VZ XN□, XR□ XX□, XZ□

100

75

50

353025201510

80

150

Ic(A)

600V / 650V 1200V

VB

PIM(V series)PIM(X series)

PIM(V series)PIM(X series)

VPVY VB

VRVZ

VKAVKC

XKAXKC

VKBVKD

XKBXKDXRKBXRKD

VMVPVWVY

VA

XMAXWA

XP□XY□

XR□XZA

XM□XP□XW□XY□

XN□XR□XX□XZ□

VNVRVXVZ

XNAXXA

VKAVKC

XKAXKC

VKBVKD

XKBXKD VA

600V/650V 1200V

PIM (Power Integrated Modules) Products Map

Note:

3

Page 5: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

6MBI Ic IGBT series & Package type

Size PageV series X seriesSolder pins Solder pins

VWVB VX XB□, XRBE XX□, XRXEV

6-Pack Products Map

Note:

600550

450

300

225250

200

180

150

100

75

50

0

Ic(A)

600V 1200V 1700V

600V 1200V 1700V

6-Pack(V series) 6-Pack(V series)6-Pack(X series)

6-Pack(V series)

VAVW

VBVX

V

V

XB□XX□XRBE*XRXE*

VAVW

VBVX

XAE VX

4

Page 6: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

2MBI Ic IGBT series & Package typeSize PageV series X series

VB XBEVD XDEVE XEEVHVJ, VN, VX XN□, XRN□- XVF HPnCVG, VT -

PrimePACK™VXB XXB, XXF, XXG, XRXGPrimePACK™ is registered

2-Pack Products Map

600V/650V 1200V 1700V 3300V

600V / 650V 1200V

2-Pack(V series)2-Pack(X series)

2-Pack(V series)2-Pack(X series)

2-Pack(V series)2-Pack(X series)

1800160015001400

1200

1000900800650600550

450400300225200150100

750

2400

Ic(A)

1700V 3300V

VB XBE

VD XDE

VA

VDVH

VB

XDE

XBE

XXBXXFXRXG*

XXA*XXE

XAA

VE

VXB

XEE

VAXAA

VAXAA*

VE XEE*

XHA VE

VHXHA*

XEE

VXA

VG

VNVXVJ

XN□XRN□*

XXAXXE

VX VJ

VXA

XVF*VTVG

VXB

XXBXXFXXG

XVF*

XN□*VN

5

Page 7: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

1MBI Ic IGBT series & Package type

Size PageV/U seriesVVC, VR, UGVD, VS, UE

1-Pack Products Map

3600

2400

1600

1500

1200

1000

900

800

600

400

300

0

Ic(A)

1200V 1700V 3300V

V

1200V 1700V 3300V

VC

VD

V

VCVR

VDVS

UE

UG

1-Pack(V series) 1-Pack(V series) 1-Pack(U series) 6

Page 8: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

IPM (Intelligent Power Modules) Products MapIPM (Intelligent Power Modules) Products Map

400

300

200

150

450

100

75

50

3530252015100

Ic(A)

600V / 650V 1200V

600V / 650V 1200V

IPM(V series)IPM(X series)

IPM(V series)IPM(X series)

XRHA

VAA

XAA* XJA*

XDA*

VEA

XEA*

XGA*

XFN*VFN

XJA*

XBA*

XDN*

VDNVDA

XGN*

VAA

XAA*XTAXTC VBA

VEA

XEA*

V DA VDN

XDA* XDN*

VBAXBA* VFN XFN*

XGN*

XGA*XRHA*

XSDXSF

6/7MBP Ic IGBT series & PacZkage typeSize

V series X seriesPageV series X series 7 in 1 6 in 1 7 in 1 6 in 1

XSD, XSF

VFN XFN

XEN

7

Page 9: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

Small PIM (Power Integrated Modules)650V 600V 1200V

Ic X series V series X series V series

With

NTC

, sol

der p

ins

mm

Thermistor

Thermistor

Thermistor

Thermistor

Thermistor

Thermistor

8

Page 10: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

PIM (Power Integrated Modules) EconoPIM™650V 600V 1200V

Ic X series V series X series V seriesW

ith N

TC, s

olde

r pin

s, P

IMmm

R

B

TS

P

R S T UV

P

R B

P

TS

B

RS

TU

VW

P

P1

NN1

B

RS

TU

V

W

P1

PN

N1

RB

PN

UV

W

P1

ST

N1

Thermistor

R S T B

P1

N N1

P

U V W

Thermistor

R S T B

P1

N N1

P

U V W

Thermistor

R S T B

P1

N N1

P

U V W

Thermistor

R S T B

P1

N N1

P

U V W

Thermistor

R S T B

P1

N N1

P

U V W

Thermistor

R S T B

P1

N N1

P

U V W

9

Page 11: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

PIM (Power Integrated Modules) EconoPIM™650V 600V 1200V

Ic X series V series X series V series mm

Thermistor

R S T B

P1

N N1

P

U V W

Thermistor

R S T B

P1

N N1

P

U V W

Thermistor

R S T B

P1

N N1

P

U V W

Thermistor

R S T B

P1

N N1

P

U V W

10

Page 12: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

600V 1200Vmm Ic V series X series V series

With

NTC

, sol

der p

ins

UV

W

PN

UV

W

PN

Thermistor

P

N

U V W

Thermistor

P

N

U V W

UV

W

PN

UV

W

PN

Thermistor

P

N

U V W

Thermistor

P

N

U V W

Thermistor

P

N

U V W

11

Page 13: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

1200V 1700Vmm Ic V series V series

With

NTC,

High p

ower

6-Pac

k

600V 1200V 1700Vmm Ic V series X series V series V series

V+ W+

C3 C1

G3 G1

T1 T2

V1 W1V2 W2

G4 G2

E3 E1

E4 E2

V- W-

Thermistor

U+

C5

G5

U1U2

G6

E5

E6

U-

UV

W

PN

UV

W

PN

Thermistor

P

N

U V W

Thermistor

P

N

U V W

Thermistor

P

N

U V W

12

Page 14: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

Standard 2-Pack650V 600V 1200V 1700V

mm Ic X series V series X series V series X series V series2-

Pack

94

92

13

Page 15: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

Standard 2-Pack1200V 1700V

mm IcX series V series V series With

SiN substrate *1X series V series V series With

SiN substrate *1

With

NTC

, sol

der p

ins

With

NTC

, spr

ing

cont

acts

‘ ’

Thermistor Thermistor

Thermistor

Thermistor

Thermistor

Thermistor Thermistor

14

Page 16: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

Chopper600V 1200V

mm Ic U series V series U series V series

Standard 1-Pack

1200V 1700VV series V series V series

mm Ic

94E1C2

Inverse Diode

FWD

G1 E1

NC

G2 E2

E2C1

E1C2

Inverse Diode

FWD

G1 E1

NC

G2 E2

E2C1

E1C2

Inverse Diode

FWD

G2 E2

E2C1

G1 E1

NC

15

Page 17: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

High Speed Modules1200V

mm Ic High Speed IGBT

Cho

pper

2-Pa

ck

Thermistor

16

Page 18: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

High Power Modules

1200V 1700V 3300VV series Trench-FS V series Trench-FS U series Trench-FS

mm IcCu-baseplate Cu-baseplate

Low switching loss

1-Pa

ck2-

Pack

130140

190

140

130140

17

Page 19: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

High Power Modules1700V 3300V

mm Ic X series X series

2-Pa

ck H

PnC

144100

18

Page 20: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

1200V 1700VX series V series X series V series

mm Ic Low switching loss Soft turn off Low switching loss Low switching loss Soft turn off2-

Pack

*

Vsat and V

89

172

89 250

Inverter Thermistor

Inverter Thermistor

Inverter Thermistor

89 250 Inverter Thermistor

19

Page 21: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

1200V 1700VV series V series

mm Ic

Cho

pper

* *

* *

* *

Vsat and V for Note4: *

89

172

89 250

Low Side High Side

Thermistor Thermistor

20

Page 22: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

mm600V 1200V 1700V

Ic V series RB-IGBT V series RB-IGBT V series RB-IGBT3 P

hase

With

NTC

, so

lder

pin

s3 P

hase

With

NTC

, 1

Phas

e

*3

1 Ph

ase

* 3

I-type NPC 3-level Module mm600V 1200V 1700V

Ic V series V series V series

1 Ph

ase

110

80

89250

T1w

WVT2w

U

T1vT1u

M

N

P

T2vT2u

T3u

T4u

T3v

T4v

T3w

T4w

RB-IGBT

T1

T2

T3

T4

RB-IGBT

T1

T4

T2

T3

89250

T1

T2

T3

T4

T1w

WVT2w

U

T1vT1u

M

N

P

T2vT2u

T3u

T4u

T3v

T4v

T3w

T4w

21

Page 23: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

Small IPM (Intelligent Power Modules)600 / 650V

mm Ic X series

Smal

l IPM

with

Hig

h Vo

ltage

D

river

-IC w

ithou

t B

rake

-Cho

pper

- -

- -

Built-in protection functions

GND COMSense current detecting for low side VSC

Power supply VCCLIN(LU)IN(LV)IN(LW)

Fault output CFO

Low sidePWM

signal input

Temperature sensor output TEMPCapacitor for fault output width selection

GND COM

IN(HU)IN(HV)IN(HW)

High sidePWM

signal input

Low-side Drv.

N(W)

N(U)N(V)

UVW

P

IS OC sensingvoltage input

High-side Drv. High-side Drv. High-side Drv.

High side biasvoltage for

IGBT drivingPower supply

High side biasvoltage for

IGBT drivingPower supply

High side biasvoltage for

IGBT drivingPower supply

High-side Drv. High-side Drv. High-side Drv.

Low-side Drv.

GND COMPower supply VCCL

IN(LU)IN(LV)IN(LW)

Fault output VFO

Low sidePWM

signal input

Power supply VCCH

GND COM

IN(HU)IN(HV)IN(HW)

High sidePWM

signal input

N(W)

N(U)N(V)

UVW

P

IS OC sensingvoltage input

Temperature sensor output TEMP

VB(U) VB(V) VB(W)

High side bias voltage for IGBT driving

8.6

31

79

22

Page 24: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

IPM (Intelligent Power Modules) mm650V 600V 1200V

Ic X series V series X series V series

With

out

Bra

ke-C

hopp

er

*

With

Brak

e-Ch

oppe

r

Built-in protection functions

7049.550.2 87

GND U

VCCUVinU

GND V

VCCVVinV

GND W

VCCWVinW

PreDriver

PreDriver

PreDriver

PreDriver

PreDriver

PreDriver

Tj-sensor IC-sensor

W

GND

VinYVinX VinZ

VU

N

Alarm output ALMRALM

RALM RALM RALM

Supply voltage VCCL

P

Alarm output U Alarm output V Alarm output W

・6MBP□VBA□-50

RALM RALM RALM

Alarm output U Alarm output V Alarm output W

W

GND

VinYVinX

GND U

VinZ

VU

P

RALM

Signal inputfor low side

Supply voltage VCCU

Supply voltage VCCL

Signal input VinUGND V

VCCVVinV

GND W

VCCWVinW

PreDriver

Pre-Driver

PreDriver

PreDriver

Tj-sensor

IC-sensor

Alarm output ALMRWNG

Warning output WNG

・6MBP□XBA□-50

W

GND

VinYVinX

GND U

VinZ

VU

P

RALM

Signal inputfor low side

Supply voltage VCCU

Supply voltage VCCL

Signal input VinUGND V

VCCVVinV

GND W

VCCWVinW

PreDriver

Pre-Driver

PreDriver

PreDriver

Tj-sensor

IC-sensorAlarm output ALM

・6MBP□XAA□-50

W

GND

VinYVinX

GND U

VinZ

VU

P

N

RALM

Signal inputfor low side

Supply voltage VCCU

Supply voltage VCCL

Signal input VinUGND V

VCCVVinV

GND W

VCCWVinW

PreDriver

Pre-Driver

PreDriver

PreDriver

Tj-sensor

IC-sensorAlarm output ALM

・6MBP□VAA□-50

W

GND

VinYVinX

GND U

VinZ

VU

P

RALM

Signal inputfor low side

Supply voltage VCCU

Supply voltage VCCL

Signal input VinUGND V

VCCVVinV

GND W

VCCWVinW

PreDriver

Pre-Driver

PreDriver

PreDriver

Tj-sensor

IC-sensorAlarm output ALM

RALM RALM RALM

Alarm output U Alarm output V Alarm output W

W

GND

Signal input VinB

VinYVinX

GND U

VinZ

VU

P

B

RALM

Signal inputfor low side

Supply voltage VCCU

Supply voltage VCCL

Signal input VinUGND V

VCCVVinV

GND W

VCCWVinW

PreDriver

PreDriver

Pre-Driver

PreDriver

PreDriver

Tj-sensor

IC-sensor

Alarm output ALM

・7MBP□XJA□-50

703650.2 87

23

Page 25: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

IPM (Intelligent Power Modules) mm650V 600V 1200V

Ic X series V series X series V series

With

out

Bra

ke-C

hopp

erW

ithB

rake

-Cho

pper

With

out

Brak

e-Ch

oppe

r

Built-in protection functions

9055

RALM RALM RALM

Alarm output U Alarm output V Alarm output W

W

GND

VinYVinX

GND U

VinZ

VU

P

RALM

Signal inputfor low side

Supply voltage VCCU

Supply voltage VCCL

Signal input VinUGND V

VCCVVinV

GND W

VCCWVinW

PreDriver

Pre-Driver

PreDriver

PreDriver

Tj-sensor

IC-sensor

Alarm output ALMRWNG

Warning output WNG

GND U

VCCUVinU

GND V

VCCVVinV

GND W

VCCWVinW

PreDriver

PreDriver

PreDriver

PreDriver

PreDriver

PreDriver

Tj-sensor IC-sensor

W

GND

VinYVinX VinZ

VU

N

Alarm output ALMRALM

RALM RALM RALM

Supply voltage VCCL

P

Alarm output U Alarm output V Alarm output W

・6MBP□VFN□-50 ・

r

W W

GND

VU

N

Alarm output ALM

Signal input VinB

Supply voltage VCCL

P

B

RALM

PreDriver

PreDriver

PreDriver

PreDriver

PreDriver

PreDriver

PreDriver

RALM RALM RALM

Alarm output U Alarm output V Alarm output W

GND U

VCCUVinU

GND V

VCCVVinV

GND W

VCCWVinW

VinYVinX VinZ

Tj-sensor IC-sensor

・7MBP□VFN□-50

RALM RALM RALM

Alarm output U Alarm output V Alarm output W

W

GND

Signal input VinB

VinYVinX

GND U

VinZ

VU

P

B

RALM

Signal inputfor low side

Supply voltage VCCU

Supply voltage VCCL

Signal input VinUGND V

VCCVVinV

GND W

VCCWVinW

PreDriver

PreDriver

Pre-Driver

PreDriver

PreDriver

Tj-sensor

IC-sensor

Alarm output ALM

・7MBP□XFN□-50

9055

RALM RALM RALM

Alarm output U Alarm output V Alarm output W

W

GND

VinYVinX

GND U

VinZ

VU

P

RALM

Signal inputfor low side

Supply voltage VCCU

Supply voltage VCCL

Signal input VinUGND V

VCCVVinV

GND W

VCCWVinW

PreDriver

Pre-Driver

PreDriver

PreDriver

Tj-sensor

IC-sensor

Alarm output ALMRWNG

・6MBP□XFN□-50

Warning output WNG

・6MBP□XFN□-50

24

Page 26: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

IPM (Intelligent Power Modules)                  mm650V 600V 1200V

Ic X series V series X series V series

With

out B

rake

-Cho

pper

With

Bra

ke-C

hopp

erBuilt-in protection functions

84 128.5

GND U

VCCUVinU

GND V

VCCVVinV

GND W

VCCWVinW

PreDriver

PreDriver

PreDriver

PreDriver

PreDriver

PreDriver

Tj-sensor IC-sensor

W

GND

VinYVinX VinZ

VU

N

Alarm output ALMRALM

RALM RALM RALM

Supply voltage VCCL

P

Alarm output U Alarm output V Alarm output W

・6MBP□VDA□-50・6MBP□VDN□-50

RALM RALM RALM

Alarm output U Alarm output V Alarm output W

W

GND

VinYVinX

GND U

VinZ

VU

P

RALM

Signal inputfor low side

Supply voltage VCCU

Supply voltage VCCL

Signal input VinUGND V

VCCVVinV

GND W

VCCWVinW

PreDriver

Pre-Driver

PreDriver

PreDriver

Tj-sensor

IC-sensor

Alarm output ALMRWNG

・6MBP□XDA□-50・6MBP□XDN□-50

Warning output WNG

W

GND

VU

N

Alarm output ALM

Signal input VinB

Supply voltage VCCL

P

B

RALM

PreDriver

PreDriver

PreDriver

PreDriver

PreDriver

PreDriver

PreDriver

RALM RALM RALM

Alarm output U Alarm output V Alarm output W

GND U

VCCUVinU

GND V

VCCVVinV

GND W

VCCWVinW

VinYVinX VinZ

Tj-sensor IC-sensor

・7MBP□VDA□-50・7MBP□VDN□-50

RALM RALM RALM

Alarm output U Alarm output V Alarm output W

W

GND

Signal input VinB

VinYVinX

GND U

VinZ

VU

P

B

RALM

Signal inputor low side

Supply voltage VCCU

Supply voltage VCCL

Signal input VinUGND V

VCCVVinV

GND W

VCCWVinW

PreDriver

PreDriver

Pre-Driver

PreDriver

PreDriver

Tj-sensor

IC-sensor

Alarm output ALM

・7MBP□XDA□-50・7MBP□XDN□-50

25

Page 27: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

IPM (Intelligent Power Modules)                     mm650V 600V 1200V

Ic X series V series X series V series

With

out B

rake

-Cho

pper

*

*

* *

* *

*

With

Bra

ke-C

hopp

er

*

*

* *

* *

*

Built-in protection functions

GND U

VCCUVinU

GND V

VCCVVinV

GND W

VCCWVinW

PreDriver

PreDriver

PreDriver

PreDriver

PreDriver

PreDriver

Tj-sensor IC-sensor

W

GND

VinYVinX VinZ

VU

N

Alarm output ALMRALM

RALM RALM RALM

Supply voltage VCCL

P

Alarm output U Alarm output V Alarm output W

・6MBP□VEA□-50

GND U

VCCUVinU

GND V

VCCVVinV

GND W

VCCWVinW

PreDriver

PreDriver

PreDriver

PreDriver

PreDriver

PreDriver

Tj-sensor IC-sensor

W

GND

VinYVinX VinZ

VU

N

Alarm output ALMRALM

RWNG

RALM RALM RALM

Supply voltage VCCL

P

Alarm output U Alarm output V Alarm output W

・6MBP□XEN□-50

Warning output WNG

W

GND

VU

N

Alarm output ALM

Signal input VinB

Supply voltage VCCL

P

B

RALM

PreDriver

PreDriver

PreDriver

PreDriver

PreDriver

PreDriver

PreDriver

RALM RALM RALM

Alarm output U Alarm output V Alarm output W

GND U

VCCUVinU

GND V

VCCVVinV

GND W

VCCWVinW

VinYVinX VinZ

Tj-sensor IC-sensor

・7MBP□VEA□-50

W

GND

VU

N

Alarm output ALM

Signal input VinB

Supply voltage VCCL

P

B

RALM

PreDriver

PreDriver

PreDriver

PreDriver

PreDriver

PreDriver

PreDriver

RALM RALM RALM

Alarm output U Alarm output V Alarm output W

GND U

VCCUVinU

GND V

VCCVVinV

GND W

VCCWVinW

VinYVinX VinZ

Tj-sensor IC-sensor

・7MBP□XEN□-50

110 142

26

Page 28: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

Hybrid SiC Modules600V 1200V 1700V

mm Ic V series V series VW series V series 2-

Pack

*

PIM

*

130140

B

RS

TU

VW

P

P1

NN1

Thermistor

R S T B

P1

N N1

P

U V W

Thermistor

92

27

Page 29: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

Hybrid SiC Modules3300V

mm Ic X series SiC-SBD series

1-Pa

ckD

iode

130140

190

140

C(K)

E(A)

C(K)

E(A)

130140

28

Page 30: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

Discrete IGBTIc

600V 650V 650V 1200VV series High speed V

seriesRB series High speed W

seriesXS series XS series V series High speed V

seriesHigh speed W

series

35A

35A

Recommended operating frequency0~ ~10 ~20 ~30 ~40 ~50 ~60 ~70 ~80 ~90 ~100 kHz

29

Page 31: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

Diode

IF

Ultra Fast Recovery Diodes Soft Recovery Fast Recovery Diodes

600V 650V 1200V

35A

( )

35A

SiC-SBD

IF

600V 1200V

30

Page 32: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

Package Outlines, mmM151 130

11461.5

18

29.5

6-φ7

4-M83-M4Screwing depth 16 max.Screwing depth 8 max.

38 2810

40

45.2124

140

20

405

20

15

2048.810.55 10.35

M152

15

8-φ7

6-M83-M4

124

45.24020

140

20.2541.25

79.4

171

13

61.561.557

38 2810

29.5

190

Screwing depth 16 max.Screwing depth 8 max.

540

2020

M153

4-φ6.52024 29

48 62

93

108

36

Depth 7 min. Depth 13 min.2-M4 2-M6

E

C

CGE20

625.7

M155 13011461.5

18

29.5

6-φ7

4-M83-M4

Screwing depth 16 max.Screwing depth 8 max.

38 2810

40

45.2124

140

20

405

20

15

20

48.810.55 10.35

M156

4020

15

20

8-φ7

6-M83-M4

124

45.24020

140

20.2541.25

79.4

171

13

61.561.557

38 2810

29.5

190

Screwing depth 16 max.Screwing depth 8 max.

5

M233

23 23

525

Tab type terminals3-M5Depth 10 min.

2-φ5.545

30 6

822

5

8092

M249

4-φ6.514 14 14

28 28 21

G2

G1

E2

E1

62 48 176

6

2525 2593108

Tab type terminals3-M6Depth 10.5 min.

822.43.70.5

630

M254

Solder pins

150137110

99.6

4-φ5.5

6257.5

39.9

20.5

5017

PN22

6.5

94.5122

Depth 10.0 min.4-M6

OUT

M256 13011455.2

11.85

29.5

6-φ757534440

4-M86-M4

38

2810

30124

140

15

20

5

3511.514

20

16 18

E1

Screwing depth 16 max.Screwing depth 8 max.

5

M259

0.1min.

Depth 10.5 min.

G2E2

E1G1C1

C2E1

E2

3.7

617

6

4862

93108

4-φ6.5

22.48

0.5

630

Tab type terminals3-M6

28 28 21

M260150137110

94.5122

4-φ5.5 4-M6Depth 9.5 min

62OUT

PN

5022

23176.5

M262

Tab type terminalsDepth 9.5 min3-M5

2.7max.

306

C1E2

C2E1 G2E2

E1G1

23 23

34174

422.38

8094

2-φ6.5

0.5

31

Page 33: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

Package Outlines, mmM263

94

34174

423 23

Depth 9.5 min3-M5 Tab type terminals

22.38

0.5

306

802-φ6.5

M271

53 141111

237

10-φ5.5M8Screwing depthmax. 16

M4Screwing depthmax.8

18

39 14

12

4 5

6

10

9

7

8

3

24.5

7389

39 39 39 39172

21.5

37

12.5

21 2.5

25.5

3

38

11

M272

14-φ5.514116711

5339114 37

111212

3 4 5

8

69

7

10

11

12

24.57389

39 39 39 39 39 39250

21.5

3737371812.5

21 2.5

25.538

M4Screwing depthmax.8

M8Screwing depthmax. 16

3

M274

4522.5

7.55

25

Tab type terminals

C1E2C2E1

2-φ5.5

3-M5Depth 10 min.

30

8092

65

23 23 17

G1

E1

E2

G2

M275

93108

30.5

Depth 10.5min.3-M6 Tab type terminals

C1C2E1 E2

25 25

E2G2

E1G1

23.5

615

6

4-φ6.5

48 6222.1 30.98.8

6

M27628 28 20

93108

4-φ6.5

156

6

630.5 4

Depth 10.5min.3-M6 Tab type terminals

4862

E2G2

E1G1

C1C2E1 E2

22.1 30.98.8

M277

Depth 10.5min.3-M6 Tab type terminals

G2

E2

E1

G1

C1C2E1 E2

2525 21.5

6280

93110

156

6

307 21.2

8.5

4-φ6.5M278 130

11455.2

11.85

29.5

6-φ757534440

4-M86-M4

38 2810

30124

140

15

20

5

3511.514

20

16 18

Screwing depth 16 max.Screwing depth 8 max.

5

M282

DETAIL A(NTS)

4-M6Depth 10.0 min.

A

6257.55022OUT 39.9

6.517 20.5

94.5110122137150

4-φ5.5

99.6

Press fit pins

M283

28 28 20

93108

4-φ6.5

67.5

62330.5 4

Depth 10.5min.3-M6 Tab type terminals

48 62

E2G2

E1G1

C1C2E1 E2

22.1 30.98.8

M285

4-M6Depth 10.0 min.

6257.55022OUT 39.9

7

17 20.5

94.5110122137150

4-φ5.5

99.6

Solder pins

M286

DETAIL A(NTS)

4-M6Depth 10.0 min.

A

6257.55022OUT 39.9

717 20.5

94.5110122137150

4-φ5.5

99.6

Press fit pins 32

Page 34: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

Package Outlines, mmM289 130

29.5114

140

124

4042

57

20

385

15

20

88

839 61.5

4-M8

6-φ7

screwing depth max.16

There are no terminals displayed here.

M403

8.5

Depth:10.5min

C

U N M PT3GE

T2GE

T1T4

G

E

G

8.5

30

21.2

4-M5

7

Tab type terminals

10.2

62 80

9.5 9.5 1919

10

16

93110

4-φ6.5

559595

M29235

5

40

127

122.5

1714.527.5

414.5 12.5

12.51816.5

140

144

29.5

53.5

13

468286100

8-M3

4- Ø6.5

4-M3

7-M8screw lengthmax. 16

screw lengthmax. 6

screw lengthmax. 6

C1

G1

E1

T

C2E2G2

E2

C1 C1

E2

E2

E1C2

E1C2

E1C2

M291

8-M8screwing depth max. 16

14φ5.5 φ0.5 A Bposition tolerancesbase plate holes

224

187

150

113

76

58

24

6

37

8-12.5

2-17

2

93

105

8 7 6 11

12 14

13

3-28B

2-21.5

2-24.523.5

21

39

73 89

14

25

3964

78

92103117156

195234

8-M4screwing depth max. 8

3826 3

2-36 8 4-18

250A

M629

(30.11)φ

M40414-φ5.5±0.2

89 73 2112.5

325.538

14 11 67 6711 11

21.5

39

37373755

250

58

3911111418106

24.5

11-M4screwing depth max. 8

ø0.5position tolerancebase plate holes

6-M8screwing depth max. 16

M633 122

110

94.5

99.6

4-φ5.5

62 50 39.9

57.5

20.5

17(3.5)

1.5

2.5

6.5

1

Solder pins 33

Page 35: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

Package Outlines, mmM636

2-φ5.5

4-φ6.1

Solder pins

M647

1

17

324521.3(4.3)

1.5

2.5

6.5

93

107.5

27.6

69.6

2-φ5.5

4-φ6.1

Press fit pins

M648

1

39.9

99.6

57.5

(4.3)

2.5

1.5

6.51721.3

110122

5062

4-φ5.5 94.5

Press fit pins

M66812211094.5

99.6

4-φ5.5

62 57.5

50

39.9

20.5

1.5

1

17

2.5

6.5

(3.5)

Solder pins

M669

107.5

93

69.6

4-φ6.1

2-φ5.5

27.645 32 11

20.5

17 2.5

1.5

(3.5)

6.5

Solder pins

M711

Solder pins

93

107.54-φ6.1

2-φ5.5

69.6

27.6

45 32 11

20.5

17 2.9

1.1

6.5

1

M712

Solder pins

122

110

94.5

99.6

4-φ5.5

62 50 39.9

57.5

20.5

17

2.9

1.1

6.5

1

3.5

M719

4-φ6.1

2-φ5.5

Solder pins

M720

2.5

1.5(3.5)

1

4-φ5.5

Solder pins

M721

1

1721.3(4.3)

1.5

2.5

6.5

93107.5

45

69.6

2-φ5.5

32

4-φ6.1

27.6

Press fit pins

M722

1

39.9

99.6

57.5

(4.3)

2.5

1.5

6.51721.3

110122

50624-φ5.594.5

Press fit pins

M726 62.8534842.5

33.8

16.4

1228.1

2-4.5×5.0

Press fit pins 34

Page 36: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

Package Outlines, mmM727 56.7

62.8

16.4

12

53 48 42.5

51

2-5.0×4.5

Press fit pins

M728 62.8534842.5

33.8

15.5

1228.1

2-4.5×5.0

Solder pins

M729 56.7

62.8

15.5

12

53 48 42.5

51

2-5.0×4.5

Solder pins

M73062.8534842.5

28.1

33.8

1.61216.4

2-4.5×5.0

Press fit pins

M7315156.7

42.5485362.8

1.61216.4

2-5.0×4.5

Press fit pins

M732

62.8534842.5

28.1

33.8

1.61215.5

2-4.5×5.0

Solder pins

M733

5156.7

42.5485362.8

1.61215.5

2-5.0×4.5

Solder pins

M1202

1

39.9

99.6

57.5

(4.3)

2.5

1.5

6.51721.3

110122

5062

4-φ5.5 94.5

Press fit pins

M1203

Solder pins

2.5

1.5(3.5)

1

4-φ5.5

P626

15.2415.2415.246.77

15.2426.65

21.2515.24

0.8

2.5

7787

50.2

0.5

U V WN

P

1 5 9 13 19

66

18

30.7

4.49.5

2217

22.5

4-φ2

2-φ4.5

P629

9.5

2

4-φ2

2-φ4.5

31.5

16.5

47.3

0.7

70

57.6

20.513.813.812.3

20.8

(22)

4.1

18

P W N

1 4 7 10 15

U V

64

49.5

60

0.5

0.8

2.5

P630

149 7

2-φ2.5

10.9

125

5.9

107.4

2-φ4.5

84

38.65

36.4

1.85

14.3

2121

18.35

252222222116

1 5 9 13 19

N

P

B U V W

128.5119.5

6-M4Depth 8 min. 0.64

35

Page 37: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

Package Outlines, mmP631

19

P1

N1

P2

N2

B

U V W

1 5 9 13

67.4121136142

4624.5

1.51.5

954.5

110

0.5

262634.51.5

24.5

2323

92427

9.5

38.5

8-M5Depth 8.5 min.

2-φ2.5

4-φ5.5

0.64

P633AA

18x1.778 (=32.004)

43

14x2.54 (=35.56)

1.6

3.2

4.2

2614

Solder Plating

DETAIL A

1.2

0.6

2.5

6.417 25.5

2.547.62 7.62 7.62 7.62 7.62 7.62 15.24

2.5 1669

15.24

15.24

24.3

21.05

3

3

25.55

55

23.68

28.4

0.64

0.8

15.24

15.24 15.24 15.24

0.64 3

80

90

4-φ22-φ4

.5

P636

TO-247-P/TO-247-P25.03

±0.15

15.9±0.15

2.23±0.19

3.71±0.29

4.32±0.18

6.17±0.15

20.95±0.15

20.17±0.15

5.62±0.15

5.45±0.254

5.45±0.254

1.98±0.15

2.4±0.15

0.6+0.09-0.05

2.03+0.4-0.13

3+0.4-0.13

1.2±0.13

φ3.61±0.1

1 5 9 13 19

P

NU V W

19 19

14.4

17.4

28.15

5-M4Depth 7.5 min.

28.4

2297

908073.66

24

8.15

25.55

55

6.4 16

□0.64

2-Ø2.5

2-Ø4.5

P638

P639

1 4 7 10 15

P U V W N

60

56

21.45

9.52.5

12.35

0.5

0.8

16.75

8.05

7064

12.8 12.8 12.8 12.8

3613.55

518

1 0.7

4-Ø2

2-Ø4.5

P644

BU VN

P

1 5 9 13 19

W

4.4 18

66

0.5

26.65

21.25

0.8

9.52.5

0.7 3

8777

15.24 15.24 15.24 15.24

6.77

15.24

15.24

221722.5

50.2

2-Ø4.5

4-Ø2

P642

2.8

10±0.3 10±0.3 10±0.3 10±0.3 10±0.3 10±0.3

70±0.379±0.5

31±0.5

12.7

8+0.1 -0.15

16±0.5

7×27×2.7

(8.6)

0.7

3.8+0.1-0.15

36.2±0.5 (20.9)

InsulatedMetalSubstrate

(10×2.54)

(14.3)

(10.3)

(2.1)

(15.3)

Solder Plating

※Note.2

(1.4)

2.54±0.3

2×Ø4.5±0.2

(0~5°)

TO-247-2L-P2

15.9±0.15φ3.61±0.1

φ7.19±0.15

5.45±0.2541.2±0.13

2.4±0.15

4.32±0.18

20.95±0.15

3.71±0.29

0.2MAX

20.17±0.15

16.69±0.15

5.45±0.254

2.23±0.19

5.03±0.15

1.98±0.15

14.02±0.136.17±0.15

5.62±0.15

0.6+0.09 -0.05

2.03+0.4 -0.13

Solder Plating

① ③

TO-247-4-P2

15.9±0.15φ3.61±0.1

φ7.19±0.15

5.08±0.254

1.25±0.132.4±0.15

4.32±0.18

20.17±0.15

3.71±0.29

20.95±0.15

17.47±0.15

5.08±0.2542.54±0.127

2.23±0.19

5.03±0.151.98±0.1514.02±0.136.

17±0.15

5.62±0.15

0.6+0.09 -0.05

2+0.4 -0.13

Solder Plating

④① ②③

TO-247(2pin)-P25.03±0.15

1.98±0.15

14.02±0.13φ3.61±0.1

φ7.19±0.15

15.9±0.15

2.4±0.151.2±0.13

5.45±0.2545.45±0.254

2.23±0.19

3.71±0.29

6.17±0.15

4.32±0.18

20.17±0.15

20.95±0.15

17.52±0.15

5.62±0.15

SolderPlating

2.03+0.4 -0.13

3+0.4 -0.13

0.6+0.09 -0.05

CONNECTION ① CATHODE ③ ANODE

TO-247

36

Page 38: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

Package Outlines, mmTO-220-2 TO-220F TO-220F-2

0.5 +0.2 0

T-Pack(s)

9.5

+0.

3−

0.5

TO-220

37

Page 39: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,
Page 40: FUJI Power Semiconductors IGBT/SiC Devices Selection Guide · IGBT Module Production Number I 300 X … -120 - 50 Number of IGBT switches Internal Configuration : I = Standard Module,

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Information in this catalog is subject to change without notice.

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2020-3 S33 FOLS Printed in Japan