friedhelm bauer bipolar super junction abb switzerland ltd. … · 2007-01-24 · -> spin-off:...
TRANSCRIPT
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Bipolar Super Junction Power Devices:
A Case Study for Complex Numerical
Modelling
Friedhelm BauerABB Switzerland Ltd.
ROBUSPIC workshopISPSD’06 Napoli
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-07IS THERE LIFE IN SPACE??IS THERE LIFE IN SPACE??
COOLMOSCOOLMOS
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……fromfrom VDMOSFET VDMOSFET to to IGBTIGBT… …
PAST DEVELOPMENTPAST DEVELOPMENT
n-doped drain
gate
p-doped anode
gate
substitutesubstitute
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……fromfrom SJ MOSFET SJ MOSFET to to SJBTSJBT… …
FUTURE DEVELOPMENT?FUTURE DEVELOPMENT?
n-doped drain
gate
p-doped anode
gate
addadd p p -- injectorinjector
& n - buffer
IEEE Trans. El. IEEE Trans. El. DevicesDevicesVol. 53, No. 4Vol. 53, No. 4pp. 884 pp. 884 --890890
20022002
20062006
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-07BIPOLAR SUPER JUNCTION CONCEPTSBIPOLAR SUPER JUNCTION CONCEPTS
SJBT SJBT implementationimplementation
forfor 1.2 kV1.2 kV
pillarpillar dopingdoping::1E16 cm1E16 cm--33
investigationinvestigationvariable:variable:n n –– bufferbuffer
dopingdoping
p-well
cathode gate
N-source
n-pillarp-pillar
n-bufferp-emitter
anode
x
y4
0.1
100
10 0.5
1.5 1.5
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ExampleExample forfor SJBT SJBT numericalnumerical gridgrid
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-07SIMULATED SJBT CHARACTERISTICS ( 1 )SIMULATED SJBT CHARACTERISTICS ( 1 )
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+000 500 1000 1500 2000
Vce in V
Ic in
A
300 K
400 K
circle: SJBT
square: IGBT
triangle: SJ MOSFETactive area: 1.216 cm2
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-07SIMULATED SJBT CHARACTERISTICS ( 2 )SIMULATED SJBT CHARACTERISTICS ( 2 )
0
50
100
150
200
0 1 2 3 4 5
Vce in V @ 400 K
Ic in
A @
400
K
active area: 1.216 cm2
Vge in 1 V steps
15 V
5 V
6 V
4 V
3 V
0
500
1000
1500
2000
2500
3000
3500
0 5 10 15 20 25 30 35
Vce in V @ 400 K
Ic in
A @
400
K
active area: 1.216 cm2 Vge in 1 V steps 15 V10 V
8 V
6 V
4 V
SJBT SJBT onon--statestate::in in thethe neighbourhoodneighbourhood of IGBTof IGBT
0
200
400
600
800
1000
1200
1400
0 5 10 15 20 25 30 35
Vce in V @ 400 K
Ic in
A @
400
K
active area: 1.216 cm2 SJBT
IGBT: Vge = 15 V
Vge = 5 V
Vge = 4 V
Vge = 3 V
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-07SIMULATED SJBT CHARACTERISTICS ( 3 )SIMULATED SJBT CHARACTERISTICS ( 3 )SJBT SJBT turnturn--offoff losseslosses as as lowlow as 10 as 10 –– 20% of IGBT 20% of IGBT losseslosses
0
200
400
600
800
1000
1200
1400
4.0E-07 6.0E-07 8.0E-07 1.0E-06 1.2E-06 1.4E-06
time in s
Ic in
A, V
ce in
V
active area: 1.216 cm2
T = 400 K
IGBTSJBT
Vce
Ic
360 A vs 600 V
0
2
4
6
8
10
12
14
1.2 1.4 1.6 1.8 2 2.2 2.4
Vce,on in V
Eoff
in m
J
active area: 1.216 cm2
SJBT: 100 um wafer thickness
PT IGBT: 125 um wafer thickness
trench IGBT
SJ-MOSFET: 100 um wafer thickness
100 A vs 600 V
T = 400 K
transientstransients
tradetrade--offoff
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-07SIMULATED SJBT CHARACTERISTICS ( 4 )SIMULATED SJBT CHARACTERISTICS ( 4 )
SJBT SJBT shortshort circuitcircuit capabilitycapability similarsimilar to IGBTto IGBT
0
200
400
600
800
1000
1200
1400
1600
1800
0.0E+00 5.0E-06 1.0E-05 1.5E-05 2.0E-05 2.5E-05
time in s
Ic in
A, V
ce in
V
active area: 1.216 cm2To = 400 K
15 V
17 V19 V21 V
23 V
25 V
Vge in V IGBTIc
Vce
0
200
400
600
800
1000
1200
1400
1600
1800
0.0E+00 5.0E-06 1.0E-05 1.5E-05 2.0E-05 2.5E-05
time in s
Ic in
A, V
ce in
V
To = 400 K active area: 1.216 cm2
Vge in V
4.0 to 4.8 V in 0.1 V steps
5.1 V
5.3 V
SJBT
Vce
350
400
450
500
550
600
650
700
750
800
850
0.0E+00 1.0E-05 2.0E-05 3.0E-05 4.0E-05 5.0E-05 6.0E-05
time in sTm
ax in
K
To = 400 KIGBT
active area: 1.216 cm2
Vge in V
15 V
17 V
19 V21 V
23 V
25 V
350
400
450
500
550
600
650
700
750
800
850
0.0E+00 1.0E-05 2.0E-05 3.0E-05 4.0E-05 5.0E-05 6.0E-05
time in s
Tmax
in K
SJBT active area: 1.216 cm2
To = 400 K
Vge in V
4 V to 4.8 V in 0.1 V steps
5.1 V
5.3 V
currentcurrent
temperaturetemperature
SJBTSJBT IGBTIGBT
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0
50
100
150
200
250
0 0.5 1 1.5 2 2.5 3
Vce in V
Ic in
A/c
m2
peak buffer concentration:
1E18 cm-32E17 cm-3
1E17 cm-38E16 cm-3
6E16 cm-34E16 cm-3
2E16 cm-3
1E16 cm-3
0
500
1000
1500
2000
2500
3000
3500
4000
0 5 10 15 20 25 30
Vce in V
Ic in
A/c
m2
peak buffer concentration:
1E18 cm-3
2E17 cm-3
1E17 cm-3
8E16 cm-3
6E16 cm-34E16 cm-3
2E16 cm-3
1E16 cm-3
unipolar unipolar –– to to -- bipolar bipolar transitiontransition
VceVce = 3 V, T = 400 K= 3 V, T = 400 K
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el. potential el. potential alongalong pillarspillars @ @ VceVce = 3 V, T = 400 K= 3 V, T = 400 K
UNDERSTANDING THE SJBT ( 2 )UNDERSTANDING THE SJBT ( 2 )
-1
0
1
2
3
4
0 20 40 60 80 100
thickness in um
elec
tric
al p
oten
tial i
n V
n-pillar
p-pillar
SJ MOSFET
nono currentcurrent in p in p –– pillarpillardrift drift transporttransport in in nn--pillarpillar
-0.5
0
0.5
1
1.5
2
2.5
3
3.5
0 20 40 60 80 100
thickness in um
el. p
oten
tial i
n p-
pilla
r in
V
peak buffer doping:
2E16 cm-3
4E16 cm-36E16 cm-3
8E16 cm-31E17 cm-3
2E17 cm-34E17 cm-3
SJBT
currentcurrent in n & p in n & p –– pillarspillarsdrift & drift & diffusiondiffusion in n & in n & pp--pillarspillars
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1.0E+15
1.0E+16
1.0E+17
0 20 40 60 80 100
thickness in um
hole
den
sity
in p
-pill
ar in
cm
-3
peak buffer doping: 2E16 cm-34E16 cm-36E16 cm-3
8E16 cm-3
1E17 cm-3
2E17 cm-3
4E17 cm-3
1.0E+04
1.0E+06
1.0E+08
1.0E+10
1.0E+12
1.0E+14
1.0E+16
1.0E+18
1.0E+20
0 20 40 60 80 100
thickness in um
elec
tron
den
sity
in p
-pill
ar in
cm
-3
peak buffer doping:
2E16 cm-3
4E16 cm-36E16 cm-3
8E16 cm-3
1E17 cm-3
2E17 cm-3
4E17 cm-3
1E18 cm-3
1.0E+15
1.0E+16
1.0E+17
1.0E+18
0 20 40 60 80 100thickness in um
elec
tron
den
sity
in n
-pill
ar in
cm
-3 peak buffer doping:
2E16 cm-34E16 cm-3
6E16 cm-3
8E16 cm-3
1E17 cm-32E17 cm-3
4E17 cm-31E18 cm-3
1.0E+05
1.0E+07
1.0E+09
1.0E+11
1.0E+13
1.0E+15
1.0E+17
1.0E+19
0 20 40 60 80 100thickness in um
hole
den
sity
in n
-pill
ar in
cm
-3 peak buffer doping:2E16 cm-34E16 cm-36E16 cm-3 8E16 cm-3
1E17 cm-32E17 cm-34E17 cm-3
1E18 cm-3
SJBT SJBT onon--statestate: : carriercarrier distributionsdistributions
pp--pillarpillar nn--pillarpillar
majmaj
minmin
VVcece = 3 V, T = 400 K= 3 V, T = 400 K
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N-pillarP-pillar cathode
highgain
mediumgain
lowgain
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N-pillarP-pillar cathode
highgain
mediumgain
lowgain
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P-pillar
MOS gate
PNP
SJBT EQUIVALENT CIRCUITSJBT EQUIVALENT CIRCUIT
N-pillar
P-pillar P-emitter Cathode
P-collector
PNP
Anode
N-buffer
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-partial SJ zone with moderately high columns-partial PIN zone with n- -doped base region-> spin-off: latch-free IGBT
400 K 1.2 kV trade-off curves: SJBT versus SPT IGBT 100 A vs 600 V, 400 K hard inductive switching; variable column height
0
5
10
15
20
25
1.2 1.4 1.6 1.8 2 2.2 2.4
Vce,on in V @ 100 A/cm2, 400 K
Eoff
in m
J @
400
K
active area: 1.216 cm2
SJBT: 100 um wafer thickness
SPT IGBT: 125 um wafer thickness
carrier lifetimes: 8 us ( electrons ), 2 us ( holes )
simulation simulation
experiment
SJ-MOSFET: 100 um wafer thickness
reducing the column height
92 um
80 um
70 um
60 um
50 um
40 um
30 um
20 um
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gate
p p -- basebase
nn--pillarpillarpp--pillarpillar
nn--bufferbuffer
n n -- emitteremitter
p p -- emitteremitter
turnturn--ononturnturn--offoff ++
n n -- emitteremitter
PNPPNP NPNNPN
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-07BIPOLAR SUPER JUNCTION CONCEPTSBIPOLAR SUPER JUNCTION CONCEPTS
SJMCT SJMCT implementationimplementation
forfor 1.2 kV1.2 kV
pillarpillar dopingdoping::1E16 cm1E16 cm--33
investigationinvestigationvariable:variable:
p p –– emitteremitterdopingdoping
p-well
cathode gate
n-pillarp-pillar
n-bufferp-emitter
anode
x
y4
0.1
100
10 0.5
1.5 1.5
n-emitter
p-base
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n,pn,p
NNdd
n,pn,p
NNdd, N, Naa
log
n, p
, Nlo
g n,
p, N
dd, N, N
aa
log
n, p
, Nlo
g n,
p, N
dd, N, N
aa
widthwidth of of middlemiddle regionregion widthwidth of of middlemiddle regionregion
conventionalconventional pnpnpnpn super super junctionjunction pnpnpnpn
el el injectorinjector el el injectorinjector hole hole injectorinjectorhole hole injectorinjector
middlemiddle basebaseregionregion
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1.0E+15
1.0E+16
1.0E+17
0 10 20 30 40 50 60 70 80 90 100
thickness in um
n, p
in c
m-3
in n
- and
p-p
illar
anodecathode
el in n-pillar
el in p-pillar
holes in p-pillar
holes in n-pillar
1.0E+15
1.0E+16
1.0E+17
0 10 20 30 40 50 60 70 80 90 100
thickness in um
n, p
in c
m-3
in n
- and
p-p
liiar
anodecathode
el in n-pillar
el in p-pillar
holes in p-pillar
holes in n-pillar
nnpp
anodeanode
carriercarrier distributionsdistributionsat 100 A at 100 A onon--statestate weakweak emitteremitter
strongstrong emitteremitter
cathodecathode
weakweakemitteremitter
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-07PERFORMANCE COMPARISON ( 1 )PERFORMANCE COMPARISON ( 1 )
0
50
100
150
200
250
300
350
400
0 2 4 6 8 10 12
Vce,on in V @ 400 K
Ic in
A @
400
K
SJMCT_100w8 SJBT_100w8 IGBT SJ MOSFET_100w8
T = 400 K
active area: 1.216 cm2
Vge = 15 V
0
5
10
15
20
25
30
35
0 50 100 150 200 250 300 350 400
Ic in A @ 400 K
Eoff
in m
J @
Vce
= 6
00 V
, T =
400
K
SJMCT_100w8
SJBT_100w8
SJ MOSFET_100w8
IGBTT = 400 K
active area: 1.216 cm2
Vcc = 600 V
onon--statestateswitchingswitching
layout layout exampleexample: 1.2 kV: 1.2 kV
SJ MOSFETSJ MOSFETIGBTIGBTSJBTSJBT
SJMCTSJMCT
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-07PERFORMANCE COMPARISON ( 2 )PERFORMANCE COMPARISON ( 2 )
onon--statestate
0
2
4
6
8
10
12
0 0.5 1 1.5 2 2.5 3 3.5 4
Vce,on in V @ 100 A, 600 V
Eoff
in m
J @
100
A, 6
00 V
layout layout exampleexample: 1.2 kV: 1.2 kV
SJ MOSFETSJ MOSFETIGBTIGBTSJBTSJBT
SJMCTSJMCT300 K300 K
300 K300 K
300 K300 K
300 K300 K500 K500 K
500 K500 K
500 K500 K
500 K500 K
hardhard inductiveinductive switchingswitching
100 A 100 A vsvs 600 V600 V
T T fromfrom 300300to 500 Kto 500 K
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zerozero voltagevoltage switchingswitching
turnturn--onon at high at high dIdIcc//dtdt
layout layout exampleexample: 1.2 kV: 1.2 kV
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Bipolar super Bipolar super junctionjunction powerpower devicedevice conceptsconcepts
•• feasibilityfeasibility proofproof ( ( numericalnumerical simulationsimulation ))
diodediode ( ( earlyearly publishedpublished workwork ) ) SJBTSJBT SJMCTSJMCT
•• realizationrealization notnot interestinginteresting to date to date
technology technology complexitycomplexitylimitedlimited blockingblocking capabilitycapabilitycompetitioncompetition forfor CoolMOSCoolMOS andand IGBTIGBT
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WideWide bandgapbandgap ( WBG ) bipolar super ( WBG ) bipolar super junctionjunction powerpower devicedevice
gate
SiSi
SiCSiC
•• lowlow EPI EPI thicknessthickness•• widewide cellcell pitchpitch•• highhigh--αα, , saturatedsaturated BJT BJT •• dual unipolar modedual unipolar mode
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