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    Effect of the diameter on the band gap of ZnO Nanorods

    Journal: Green Chemistry Letters and Reviews

    Manuscript ID: Draft

    Manuscript Type: Research Letter

    Date Submitted by the Author: n/a

    Complete List of Authors: Kasim, Muhd; University of Technology MARA, Faculty of Applied ScienceKamarulzaman, Norlida; University of technology MARA, Centre forNanomaterials Research, Institute of ScienceRusdi, Roshidah; University of Technology MARA, Centre for NanomaterialsResearch, Institute of Science

    Keywords: ZnO nanorod, Band gap, lattice parameters

    URL: http:/mc.manuscriptcentral.com/tgcl Email: [email protected]

    Green Chemistry Letters and Reviews

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    widening of nanostructured ZnO, MgO and doped metal oxides compounds. Her effort in

    research is to contribute towards the better understanding of phenomena observed in

    nanostructured materials. She has published more than 80 papers to major international journals

    such asJournal of Power Sources,Powder Technology,J. Cryst. Growth, Advanced Materials

    Research,and etc.

    Roshidah Rusdi is a Ph.D student at the Universiti Teknologi MARA (UiTM). She has her

    bachelors degree in chemistry and is currently working on complex metal oxides for

    application in Li-ion batteries. She did her M.Sc on Materials Science (ZnO nanostructured

    materials) and has published results on the band gap widening of high aspect ratio ZnO

    nanorods. She has published more than 30 papers to major international journals such as

    Powder Technology,Advanced Materials Research, J. Cryst. Growth, and etc. She hopes to be

    able to make new findings on Li-ion battery materials and fabricate thin film Li-ion batteries.

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    Effect of the diameter on the band gap of ZnO Nanorods

    ZnO is considered one of the safest metal oxides for consumer. There are many

    techniques that can be used to synthesize ZnO nanostructures. In this study, the

    sol-gel synthesis method is used. The effect of a gelling agent is investigated in

    terms of the ZnO nanostructures obtained. One sample is done using a sol-gel

    synthesis route using tartaric acid and the other sample is synthesized without

    using a gelling agent at all. Results showed that the samples are pure, however

    the sample prepared without using the gelling agent were rods with long aspect

    ratios while the one obtained using the gelling agent were rods with lower aspect

    ratios. It was found that the band gap of the high aspect ratio ZnO is smaller than

    the one with low aspect ratio. This is attributable to the lattice expansion of thelower aspect ratio ZnO nanorods as obtained from quantitative X-Ray diffraction.

    Keywords: ZnO nanorod; band gap; lattice parameters

    Introduction

    Over the past years, several oxide nanoparticles have become important applications

    and one of them is ZnO which is considered as the best to be exploited at nano

    dimensions. Zinc oxide is considered non-toxic and therefore is environmentally

    friendly, suitable for safe use in many applications. Zinc oxide (ZnO) have been

    actively studied because of their potential applications in solar-cells, optoelectronic

    (UV) devices, gas sensors, and UV light emitting/detecting technology [1-4] and has

    motivated many researchers to study them. This is due to their unique properties of

    which are wide and direct band gap (3.37eV) and large exciton binding energy (60

    meV) [3-5]. The unique properties of ZnO have triggered researchers to develop many

    simpler and low cost techniques to produce ZnO nanostructures.The dependence of

    properties on the size and shape of ZnO particles has led to many interesting

    applications [6, 7], one of them is the band gap tuning of ZnO semiconductors. It has

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    been found that the band gap of ZnO is dependent on size and shape of the

    nanoparticles and it may be possible to tune band gaps of ZnO by controlling their

    dimensions.

    A wide variety of synthesis methods and techniques have been used to

    synthesize ZnO nanostructures. They include hydrothermal methods [3, 8], pulsed laser

    deposition (PLD) [5], vapour transport process [9], metal organic vapour phase epitaxial

    growth [10], etc. In this work, the sol-gel method has been used to synthesize ZnO

    nanostructures. The sol-gel method is popular due to their simple, low cost and ease of

    synthesis. This work explores the effect of using a gelling agent on the ZnO

    nanostructures and comparing it with a synthesis route that does not use a gelling agent.

    The functional property of band gap is investigated in relation to the thermal properties

    of the materials.

    Experimental

    ZnO nanostructures have been synthesized using a sol-gel method. The starting material

    used for both samples is Zinc acetate dehydrate (99.5% purity). Zinc acetate dihydrate

    was first dissolved in absolute ethanol and then was stirred for about 1 hour. While

    stirring, the gelling agent, tartaric acid (TA) (Fluka, 99.5% purity, 1 M solution) was

    added to one of the mixture until a thick, white gel was obtained. The pH for both

    solutions was 5. Then, the samples were grinded using an agate mortar to obtain fine

    powders. The precursors were annealed at 300 C for 3h. The samples were named as

    Z1 for ZnO synthesized using tartaric acid and Z2 for ZnO synthesized without using

    tartaric acid. For the ZnO without using the chelating agent, no thick gel was observed

    to have been formed even during the drying process. The annealed samples were

    characterized by using X-Ray diffraction (XRD) using the PANalytical Xpert Pro MPD

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    diffractometer. The morphologies and physical dimensions of the materials were then

    examined by Field Emission Scanning Electron Microscopy (FESEM), the JEOL JSM-

    7600F. Band gap energies of the materials were evaluated by using a UV-Vis

    spectrophotometer, the Perkin Elmer Lambda 950 UV-Vis-NIR. The measurements

    were done in reflection mode.

    Results and discussions

    Thermal studies of the precursors of ZnO for both samples were carried out by using

    simultaneous thermogravimetric analysis (STA). The results are shown in Figure 1b and

    1c with and without chelating agents.

    (Figure 1)

    The result in Figure 1a of the starting material shows that it decomposes at about

    280oC. From the result in Fig 1b, the ZnO precursor with chelating agent has three

    mass losses. The first mass loss is observed starting from 90oC in Figure 1b and it is

    attributed to the residual water loss in the precursor. This first mass loss is about 11.3

    %. The second mass loss which is a major mass loss of the ZnO precursor is about 54.%

    and it started at about of 250oC. This mass loss is believed to be the decomposition of

    the zinc intermediates formed by the fixation of the metal compound to the organic

    polymeric matrix. The third mass loss which is about 5.7 % is due to a second

    intermediate formed during the reaction which decomposes at a higher temperature of

    380oC. The material is stable after about 390

    oC. For the precursor of sample Z2, the

    first and major mass loss occurring at 250oC which is about 65% is due to the

    decomposition of the complex organometallic compound formed during the reaction. In

    support of this, only one endothermic peak is observed during this mass loss. Another

    exothermic peak is observed during the end of this mass loss attributed to the release of

    stress when the crystal structure changes its morphology from the long nanorod to the

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    spherical shaped crystals. From the STA results, 300oC is an interesting temperature to

    use for investigating ZnO nanostructures that will be formed because at this temperature

    a very big difference in mass loss is observed for both ZnO synthesized without

    chelating agent and with chelating agent, that is, about 8% and 65% respectively. This

    different mass losses indicates that the ZnO synthesized without chelating agent has

    higher thermal stability than with chelating agent. These facts can be correlated to the

    rate of crystal growth of ZnO discussed later.

    For structural studies, a Rietveld refinement of the XRD patterns of ZnO

    material is done using the PanAlytical Xpert Highscore Plus software. All data taken

    are of high quality with the highest peak at around 10 000 counts satisfying the statistics

    needed for quantitative analysis. The reference structure used in the refinement is the

    ZnO hexagonal crystal structure with space group P63mc (ICSD 67454). The XRD

    patterns of the ZnO samples annealed at 300 C for 3h are shown in Figure 2 and the

    structural parameters obtained are displayed in Table 1. The diffraction patterns of each

    sample were in good agreement with the ICDD reference number 01-089-0511 as

    indexed in Figure 2. They indicate that the synthesized samples were single phase of the

    hexagonal crystal structure and space group P63mc. This is the stable phase of ZnO. It

    is observed that the (002) peak is relatively high compared to the (100) peak. This

    means that there is preferred orientation in the direction of this crystal plane. The ratio

    of (002)/ (100) peaks for Z1 and Z2 are 0.9945 and 1.0389 respectively. These results

    indicate that the Z2 material has a high growth rate in the [002] crystal plane direction

    as compared to Z1 material. It is also observed that Z2 material has higher intensity than

    Z1 material. This means that Z2 material is more crystalline than Z1 material as can be

    seen by the higher counts of the peaks exhibited by Z2 material compared to Z1.

    (Figure 2)

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    (Table 1)

    The SEM images of the ZnO samples annealed at 300 C for 3h are shown in

    Figure 3. It can be seen that both samples have nanorod shaped morphology. However,

    the Z2 sample possesses longer and thinner rods than Z1 sample. The average aspect

    ratio (length/diameter) for Z1 and Z2 are 19.47 and 27.66 respectively. It is a known

    characteristic of ZnO to have a preferred growth direction in the c-axis of the crystal

    orientation [1]. That is in the [002] crystal plane direction (as can be seen by the

    relatively higher (002) peak compared to standard XRD patterns). Therefore, SEM

    results supported the results of XRD.

    (Figure 3)

    Absorption edges are shown in the reflectance spectra of the UV-Vis results

    shown in Figure 4. The UV-Vis spectroscopic measurements were carried out at room

    temperature in the wavelength range of 330-800 nm. It can be seen that the absorption

    edge of the Z2 material is slightly shifted to the right as compared to Z1 material. This

    indicates that light is absorbed at a higher wavelength for Z2 material. Higher

    crystallinity Z1 material, seem to affect light absorption properties of the material. So, it

    can be said that the light absorption characteristics of the materials is influenced by the

    physical dimensions of the material which in this case refers to the length and diameter

    of the ZnO nanorod. Band gaps can be evaluated from the absorption edges. The band

    gap energies of ZnO materials are determined by using Tauc plots. Equation (1) below

    is used

    (h)2= C (h -Eg) (1)

    where is the absorption coefficient of the material, is the wavelength, h is Planck's

    constant, C is the proportionality constant, is the frequency of light and Eg is the

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    band gap energy. The graph plotted is (h)2vs h and from equation (1), extrapolating

    the linear part of the graph until it meets the x-axis will give the value of the band gap

    [1]. The band gap energies of the materials are determined from the Tauc plots shown in

    Figure 5. It is observed that the band gap energy for Z1 material is higher than Z2

    material. Looking at the cell parameters

    (Figure 4)

    (Figure 5)

    (Table 1), it can be seen that Z1 which has a lower aspect ratio, has larger cell

    parameters. The material with the larger cell parameter shows a higher band gap.

    Therefore, the band gap expansion of Z1 can be attributed to the lattice parameter

    expansion of the nano crystals. The mean diameter of Z1 and Z2 sample is 44 and 61

    nm respectively while the length is 812 and 1611 nm respectively. It is obvious here

    that the diameter plays a part in the band gap expansion of sample Z1. The diameter of

    the nanorods are in the nano range while the length is no longer considered nano

    dimensional. Band gap change is a phenomenon attributed to the quantum particle

    effects of nanstructures.

    Conclusion

    This work shows that band gap changes can occur in nanostructured materials. The cell

    dimension, which is in this case the diameter, is responsible for the observed

    phenomenon. The nanostructured ZnO with a smaller diameter (Z1) experienced an

    increase in lattice parameter resulting in the expansion of the band gap.

    Acknowledgement

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    The authors would like to thank the Faculty of Applied Sciences UiTM Shah Alam,

    Malaysia for funding of the project and the Institute of Science, UiTM Shah Alam,

    Malaysia for internal funding and equipment support.

    References

    1. Rusdi, R.; Rahman, A.A.; Mohamed, N.S.; Kamarudin, N.; Kamarulzaman, N.;

    Powder Technol.2011,210, 1822.

    2. Waclawik, E. R.; Chang, J.; Ponzoni, A.; Concina, I.; Zappa, D.; Comini, E.; Motta,

    N.; Faglia, G.; Sberveglieri, G.;Beilstein J. Nanotechnol. 2012, 3, 368377.

    3. Anandan, S.; Ohashi, N.; Miyauchi, M.;Appl. Catal., B2010, 100, 502509.

    4. Luo, L.; Zhang, Y.; Mao, S.S.; Lin, L.; Sens. Actuators, A 2006, 127, 201206.

    5. Shan, F.K.; Liu, G.X.; Lee, W.J.; Shin, B.C.;J. Cryst. Growth2006, 291,328333.

    6. Xu, H.; Liu, X.; Cui, D.; Li, M.; Jiang, M.; Sens. Actuators, B 2006, 114,301307.

    7. Sonmezoglu, S.; Eskizeybek, V.; Toumiat, A.; Avc, A.; J. Alloys Compd. 2014,

    586, 593599.

    8. Ni, Y.; Wu, G.; Zhang, X.; Cao, X.; Hu, G.; Tao, A.; Yang, Z.; Wei, X.; Mater. Res.

    Bull. 2008, 43, 29192928.

    9. Yu, D.; Trad, T.; McLeskey Jr., J.T.; Craciun, V.; Taylor, C.R.; Nanoscale Res Lett.

    2010, 5, 13331339.

    10. Ogata, K.; Kimb, S.-W.; Fujita, Sz.; Fujita, Sg.; J.Cryst. Growth2002, 240, 112

    116.

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    Table 1. Crystallographic parameters of the ZnO sample from the Rietveld refinement

    of the XRD data sets (s.o.f.= site occupancy factor)

    Figure 1. STA results of (a) zinc acetate, (b) ZnO precursors with chelating agent (c)

    ZnO precursors without chelating agent.

    Figure 2. The XRD pattern of (a) Z1 and (b) Z2 sample

    Figure 3.The SEM images of (a) Z1 and (b) Z2 sample

    Figure 4. The UV-Vis results of (a) Z1 and (b) Z2 sample showing the absorption edge

    Figure 5. The Tauc plot graph of (a) Z1 and (b) Z2 sample

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    Table 1. Crystallographic parameters of the ZnO sample from the Rietveld refinement of the XRD datasets (s.o.f.= site occupancy factor)

    Sample a=b() c () V (

    3) c/a Rw s.o.f ofZn s.o.f ofO

    Z1 3.2497 5.2067 47.6205 1.6022 6.4759 0.9455 1

    Z2 3.2493 5.2063 47.6036 1.6023 10.1919 0.9442 1

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    STA results of (a) zinc acetate, (b) ZnO precursors with chelating agent (c) ZnO precursors without chelatingagent.

    80x156mm (600 x 600 DPI)

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    The XRD pattern of (a) Z1 and (b) Z2 sample39x39mm (600 x 600 DPI)

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    The SEM images of (a) Z1 and (b) Z2 sample16x6mm (300 x 300 DPI)

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    The UV-Vis results of (a) Z1 and (b) Z2 sample showing the absorption edge45x29mm (600 x 600 DPI)

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    The Tauc plot graph of (a) Z1 and (b) Z2 sample45x29mm (600 x 600 DPI)

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