effect of diameter of zno
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Effect of the diameter on the band gap of ZnO Nanorods
Journal: Green Chemistry Letters and Reviews
Manuscript ID: Draft
Manuscript Type: Research Letter
Date Submitted by the Author: n/a
Complete List of Authors: Kasim, Muhd; University of Technology MARA, Faculty of Applied ScienceKamarulzaman, Norlida; University of technology MARA, Centre forNanomaterials Research, Institute of ScienceRusdi, Roshidah; University of Technology MARA, Centre for NanomaterialsResearch, Institute of Science
Keywords: ZnO nanorod, Band gap, lattice parameters
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widening of nanostructured ZnO, MgO and doped metal oxides compounds. Her effort in
research is to contribute towards the better understanding of phenomena observed in
nanostructured materials. She has published more than 80 papers to major international journals
such asJournal of Power Sources,Powder Technology,J. Cryst. Growth, Advanced Materials
Research,and etc.
Roshidah Rusdi is a Ph.D student at the Universiti Teknologi MARA (UiTM). She has her
bachelors degree in chemistry and is currently working on complex metal oxides for
application in Li-ion batteries. She did her M.Sc on Materials Science (ZnO nanostructured
materials) and has published results on the band gap widening of high aspect ratio ZnO
nanorods. She has published more than 30 papers to major international journals such as
Powder Technology,Advanced Materials Research, J. Cryst. Growth, and etc. She hopes to be
able to make new findings on Li-ion battery materials and fabricate thin film Li-ion batteries.
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Effect of the diameter on the band gap of ZnO Nanorods
ZnO is considered one of the safest metal oxides for consumer. There are many
techniques that can be used to synthesize ZnO nanostructures. In this study, the
sol-gel synthesis method is used. The effect of a gelling agent is investigated in
terms of the ZnO nanostructures obtained. One sample is done using a sol-gel
synthesis route using tartaric acid and the other sample is synthesized without
using a gelling agent at all. Results showed that the samples are pure, however
the sample prepared without using the gelling agent were rods with long aspect
ratios while the one obtained using the gelling agent were rods with lower aspect
ratios. It was found that the band gap of the high aspect ratio ZnO is smaller than
the one with low aspect ratio. This is attributable to the lattice expansion of thelower aspect ratio ZnO nanorods as obtained from quantitative X-Ray diffraction.
Keywords: ZnO nanorod; band gap; lattice parameters
Introduction
Over the past years, several oxide nanoparticles have become important applications
and one of them is ZnO which is considered as the best to be exploited at nano
dimensions. Zinc oxide is considered non-toxic and therefore is environmentally
friendly, suitable for safe use in many applications. Zinc oxide (ZnO) have been
actively studied because of their potential applications in solar-cells, optoelectronic
(UV) devices, gas sensors, and UV light emitting/detecting technology [1-4] and has
motivated many researchers to study them. This is due to their unique properties of
which are wide and direct band gap (3.37eV) and large exciton binding energy (60
meV) [3-5]. The unique properties of ZnO have triggered researchers to develop many
simpler and low cost techniques to produce ZnO nanostructures.The dependence of
properties on the size and shape of ZnO particles has led to many interesting
applications [6, 7], one of them is the band gap tuning of ZnO semiconductors. It has
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been found that the band gap of ZnO is dependent on size and shape of the
nanoparticles and it may be possible to tune band gaps of ZnO by controlling their
dimensions.
A wide variety of synthesis methods and techniques have been used to
synthesize ZnO nanostructures. They include hydrothermal methods [3, 8], pulsed laser
deposition (PLD) [5], vapour transport process [9], metal organic vapour phase epitaxial
growth [10], etc. In this work, the sol-gel method has been used to synthesize ZnO
nanostructures. The sol-gel method is popular due to their simple, low cost and ease of
synthesis. This work explores the effect of using a gelling agent on the ZnO
nanostructures and comparing it with a synthesis route that does not use a gelling agent.
The functional property of band gap is investigated in relation to the thermal properties
of the materials.
Experimental
ZnO nanostructures have been synthesized using a sol-gel method. The starting material
used for both samples is Zinc acetate dehydrate (99.5% purity). Zinc acetate dihydrate
was first dissolved in absolute ethanol and then was stirred for about 1 hour. While
stirring, the gelling agent, tartaric acid (TA) (Fluka, 99.5% purity, 1 M solution) was
added to one of the mixture until a thick, white gel was obtained. The pH for both
solutions was 5. Then, the samples were grinded using an agate mortar to obtain fine
powders. The precursors were annealed at 300 C for 3h. The samples were named as
Z1 for ZnO synthesized using tartaric acid and Z2 for ZnO synthesized without using
tartaric acid. For the ZnO without using the chelating agent, no thick gel was observed
to have been formed even during the drying process. The annealed samples were
characterized by using X-Ray diffraction (XRD) using the PANalytical Xpert Pro MPD
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diffractometer. The morphologies and physical dimensions of the materials were then
examined by Field Emission Scanning Electron Microscopy (FESEM), the JEOL JSM-
7600F. Band gap energies of the materials were evaluated by using a UV-Vis
spectrophotometer, the Perkin Elmer Lambda 950 UV-Vis-NIR. The measurements
were done in reflection mode.
Results and discussions
Thermal studies of the precursors of ZnO for both samples were carried out by using
simultaneous thermogravimetric analysis (STA). The results are shown in Figure 1b and
1c with and without chelating agents.
(Figure 1)
The result in Figure 1a of the starting material shows that it decomposes at about
280oC. From the result in Fig 1b, the ZnO precursor with chelating agent has three
mass losses. The first mass loss is observed starting from 90oC in Figure 1b and it is
attributed to the residual water loss in the precursor. This first mass loss is about 11.3
%. The second mass loss which is a major mass loss of the ZnO precursor is about 54.%
and it started at about of 250oC. This mass loss is believed to be the decomposition of
the zinc intermediates formed by the fixation of the metal compound to the organic
polymeric matrix. The third mass loss which is about 5.7 % is due to a second
intermediate formed during the reaction which decomposes at a higher temperature of
380oC. The material is stable after about 390
oC. For the precursor of sample Z2, the
first and major mass loss occurring at 250oC which is about 65% is due to the
decomposition of the complex organometallic compound formed during the reaction. In
support of this, only one endothermic peak is observed during this mass loss. Another
exothermic peak is observed during the end of this mass loss attributed to the release of
stress when the crystal structure changes its morphology from the long nanorod to the
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spherical shaped crystals. From the STA results, 300oC is an interesting temperature to
use for investigating ZnO nanostructures that will be formed because at this temperature
a very big difference in mass loss is observed for both ZnO synthesized without
chelating agent and with chelating agent, that is, about 8% and 65% respectively. This
different mass losses indicates that the ZnO synthesized without chelating agent has
higher thermal stability than with chelating agent. These facts can be correlated to the
rate of crystal growth of ZnO discussed later.
For structural studies, a Rietveld refinement of the XRD patterns of ZnO
material is done using the PanAlytical Xpert Highscore Plus software. All data taken
are of high quality with the highest peak at around 10 000 counts satisfying the statistics
needed for quantitative analysis. The reference structure used in the refinement is the
ZnO hexagonal crystal structure with space group P63mc (ICSD 67454). The XRD
patterns of the ZnO samples annealed at 300 C for 3h are shown in Figure 2 and the
structural parameters obtained are displayed in Table 1. The diffraction patterns of each
sample were in good agreement with the ICDD reference number 01-089-0511 as
indexed in Figure 2. They indicate that the synthesized samples were single phase of the
hexagonal crystal structure and space group P63mc. This is the stable phase of ZnO. It
is observed that the (002) peak is relatively high compared to the (100) peak. This
means that there is preferred orientation in the direction of this crystal plane. The ratio
of (002)/ (100) peaks for Z1 and Z2 are 0.9945 and 1.0389 respectively. These results
indicate that the Z2 material has a high growth rate in the [002] crystal plane direction
as compared to Z1 material. It is also observed that Z2 material has higher intensity than
Z1 material. This means that Z2 material is more crystalline than Z1 material as can be
seen by the higher counts of the peaks exhibited by Z2 material compared to Z1.
(Figure 2)
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(Table 1)
The SEM images of the ZnO samples annealed at 300 C for 3h are shown in
Figure 3. It can be seen that both samples have nanorod shaped morphology. However,
the Z2 sample possesses longer and thinner rods than Z1 sample. The average aspect
ratio (length/diameter) for Z1 and Z2 are 19.47 and 27.66 respectively. It is a known
characteristic of ZnO to have a preferred growth direction in the c-axis of the crystal
orientation [1]. That is in the [002] crystal plane direction (as can be seen by the
relatively higher (002) peak compared to standard XRD patterns). Therefore, SEM
results supported the results of XRD.
(Figure 3)
Absorption edges are shown in the reflectance spectra of the UV-Vis results
shown in Figure 4. The UV-Vis spectroscopic measurements were carried out at room
temperature in the wavelength range of 330-800 nm. It can be seen that the absorption
edge of the Z2 material is slightly shifted to the right as compared to Z1 material. This
indicates that light is absorbed at a higher wavelength for Z2 material. Higher
crystallinity Z1 material, seem to affect light absorption properties of the material. So, it
can be said that the light absorption characteristics of the materials is influenced by the
physical dimensions of the material which in this case refers to the length and diameter
of the ZnO nanorod. Band gaps can be evaluated from the absorption edges. The band
gap energies of ZnO materials are determined by using Tauc plots. Equation (1) below
is used
(h)2= C (h -Eg) (1)
where is the absorption coefficient of the material, is the wavelength, h is Planck's
constant, C is the proportionality constant, is the frequency of light and Eg is the
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band gap energy. The graph plotted is (h)2vs h and from equation (1), extrapolating
the linear part of the graph until it meets the x-axis will give the value of the band gap
[1]. The band gap energies of the materials are determined from the Tauc plots shown in
Figure 5. It is observed that the band gap energy for Z1 material is higher than Z2
material. Looking at the cell parameters
(Figure 4)
(Figure 5)
(Table 1), it can be seen that Z1 which has a lower aspect ratio, has larger cell
parameters. The material with the larger cell parameter shows a higher band gap.
Therefore, the band gap expansion of Z1 can be attributed to the lattice parameter
expansion of the nano crystals. The mean diameter of Z1 and Z2 sample is 44 and 61
nm respectively while the length is 812 and 1611 nm respectively. It is obvious here
that the diameter plays a part in the band gap expansion of sample Z1. The diameter of
the nanorods are in the nano range while the length is no longer considered nano
dimensional. Band gap change is a phenomenon attributed to the quantum particle
effects of nanstructures.
Conclusion
This work shows that band gap changes can occur in nanostructured materials. The cell
dimension, which is in this case the diameter, is responsible for the observed
phenomenon. The nanostructured ZnO with a smaller diameter (Z1) experienced an
increase in lattice parameter resulting in the expansion of the band gap.
Acknowledgement
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The authors would like to thank the Faculty of Applied Sciences UiTM Shah Alam,
Malaysia for funding of the project and the Institute of Science, UiTM Shah Alam,
Malaysia for internal funding and equipment support.
References
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Powder Technol.2011,210, 1822.
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N.; Faglia, G.; Sberveglieri, G.;Beilstein J. Nanotechnol. 2012, 3, 368377.
3. Anandan, S.; Ohashi, N.; Miyauchi, M.;Appl. Catal., B2010, 100, 502509.
4. Luo, L.; Zhang, Y.; Mao, S.S.; Lin, L.; Sens. Actuators, A 2006, 127, 201206.
5. Shan, F.K.; Liu, G.X.; Lee, W.J.; Shin, B.C.;J. Cryst. Growth2006, 291,328333.
6. Xu, H.; Liu, X.; Cui, D.; Li, M.; Jiang, M.; Sens. Actuators, B 2006, 114,301307.
7. Sonmezoglu, S.; Eskizeybek, V.; Toumiat, A.; Avc, A.; J. Alloys Compd. 2014,
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8. Ni, Y.; Wu, G.; Zhang, X.; Cao, X.; Hu, G.; Tao, A.; Yang, Z.; Wei, X.; Mater. Res.
Bull. 2008, 43, 29192928.
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Table 1. Crystallographic parameters of the ZnO sample from the Rietveld refinement
of the XRD data sets (s.o.f.= site occupancy factor)
Figure 1. STA results of (a) zinc acetate, (b) ZnO precursors with chelating agent (c)
ZnO precursors without chelating agent.
Figure 2. The XRD pattern of (a) Z1 and (b) Z2 sample
Figure 3.The SEM images of (a) Z1 and (b) Z2 sample
Figure 4. The UV-Vis results of (a) Z1 and (b) Z2 sample showing the absorption edge
Figure 5. The Tauc plot graph of (a) Z1 and (b) Z2 sample
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Table 1. Crystallographic parameters of the ZnO sample from the Rietveld refinement of the XRD datasets (s.o.f.= site occupancy factor)
Sample a=b() c () V (
3) c/a Rw s.o.f ofZn s.o.f ofO
Z1 3.2497 5.2067 47.6205 1.6022 6.4759 0.9455 1
Z2 3.2493 5.2063 47.6036 1.6023 10.1919 0.9442 1
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STA results of (a) zinc acetate, (b) ZnO precursors with chelating agent (c) ZnO precursors without chelatingagent.
80x156mm (600 x 600 DPI)
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The XRD pattern of (a) Z1 and (b) Z2 sample39x39mm (600 x 600 DPI)
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The SEM images of (a) Z1 and (b) Z2 sample16x6mm (300 x 300 DPI)
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The UV-Vis results of (a) Z1 and (b) Z2 sample showing the absorption edge45x29mm (600 x 600 DPI)
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The Tauc plot graph of (a) Z1 and (b) Z2 sample45x29mm (600 x 600 DPI)
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