eecs 312 discussion - ziyang.eecs.umich.eduziyang.eecs.umich.edu/eecs312/lectures/dic-d3.pdfeecs 312...
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![Page 2: EECS 312 Discussion - ziyang.eecs.umich.eduziyang.eecs.umich.edu/eecs312/lectures/dic-d3.pdfEECS 312 Discussion 3 09/20 Shengshuo Lu (luss@umich.edu) Overview •Reminder –HW 1:](https://reader030.vdocuments.us/reader030/viewer/2022040704/5e013543c133215844016246/html5/thumbnails/2.jpg)
Overview
• Reminder
– HW 1: Due Sep 24
• Diode
• Transistors
![Page 3: EECS 312 Discussion - ziyang.eecs.umich.eduziyang.eecs.umich.edu/eecs312/lectures/dic-d3.pdfEECS 312 Discussion 3 09/20 Shengshuo Lu (luss@umich.edu) Overview •Reminder –HW 1:](https://reader030.vdocuments.us/reader030/viewer/2022040704/5e013543c133215844016246/html5/thumbnails/3.jpg)
Diode
G
S D
![Page 4: EECS 312 Discussion - ziyang.eecs.umich.eduziyang.eecs.umich.edu/eecs312/lectures/dic-d3.pdfEECS 312 Discussion 3 09/20 Shengshuo Lu (luss@umich.edu) Overview •Reminder –HW 1:](https://reader030.vdocuments.us/reader030/viewer/2022040704/5e013543c133215844016246/html5/thumbnails/4.jpg)
Diode
![Page 5: EECS 312 Discussion - ziyang.eecs.umich.eduziyang.eecs.umich.edu/eecs312/lectures/dic-d3.pdfEECS 312 Discussion 3 09/20 Shengshuo Lu (luss@umich.edu) Overview •Reminder –HW 1:](https://reader030.vdocuments.us/reader030/viewer/2022040704/5e013543c133215844016246/html5/thumbnails/5.jpg)
Diode
![Page 6: EECS 312 Discussion - ziyang.eecs.umich.eduziyang.eecs.umich.edu/eecs312/lectures/dic-d3.pdfEECS 312 Discussion 3 09/20 Shengshuo Lu (luss@umich.edu) Overview •Reminder –HW 1:](https://reader030.vdocuments.us/reader030/viewer/2022040704/5e013543c133215844016246/html5/thumbnails/6.jpg)
Built-in Potential Depletion Region Width
![Page 7: EECS 312 Discussion - ziyang.eecs.umich.eduziyang.eecs.umich.edu/eecs312/lectures/dic-d3.pdfEECS 312 Discussion 3 09/20 Shengshuo Lu (luss@umich.edu) Overview •Reminder –HW 1:](https://reader030.vdocuments.us/reader030/viewer/2022040704/5e013543c133215844016246/html5/thumbnails/7.jpg)
Diode Current
![Page 8: EECS 312 Discussion - ziyang.eecs.umich.eduziyang.eecs.umich.edu/eecs312/lectures/dic-d3.pdfEECS 312 Discussion 3 09/20 Shengshuo Lu (luss@umich.edu) Overview •Reminder –HW 1:](https://reader030.vdocuments.us/reader030/viewer/2022040704/5e013543c133215844016246/html5/thumbnails/8.jpg)
Diffusion capacitance
![Page 9: EECS 312 Discussion - ziyang.eecs.umich.eduziyang.eecs.umich.edu/eecs312/lectures/dic-d3.pdfEECS 312 Discussion 3 09/20 Shengshuo Lu (luss@umich.edu) Overview •Reminder –HW 1:](https://reader030.vdocuments.us/reader030/viewer/2022040704/5e013543c133215844016246/html5/thumbnails/9.jpg)
NMOS
G
S D
![Page 10: EECS 312 Discussion - ziyang.eecs.umich.eduziyang.eecs.umich.edu/eecs312/lectures/dic-d3.pdfEECS 312 Discussion 3 09/20 Shengshuo Lu (luss@umich.edu) Overview •Reminder –HW 1:](https://reader030.vdocuments.us/reader030/viewer/2022040704/5e013543c133215844016246/html5/thumbnails/10.jpg)
Threshold Voltage
• 0 < VGS < VT
– Repel mobile holes and accumulation of electron beneath the gate oxide
• VGS > VT
– Surface is as strongly n-type as the substrate is p-type
VGS VT
Ron
S D
![Page 11: EECS 312 Discussion - ziyang.eecs.umich.eduziyang.eecs.umich.edu/eecs312/lectures/dic-d3.pdfEECS 312 Discussion 3 09/20 Shengshuo Lu (luss@umich.edu) Overview •Reminder –HW 1:](https://reader030.vdocuments.us/reader030/viewer/2022040704/5e013543c133215844016246/html5/thumbnails/11.jpg)
Operation Regions – Linear (lab 2)
1. VGS > VT
2. VGS – VT > VDS
3. Linear contribution of VGT to ID
4.
In case of a P-type MOSFET, the inequalities used above should be directed opposite
![Page 12: EECS 312 Discussion - ziyang.eecs.umich.eduziyang.eecs.umich.edu/eecs312/lectures/dic-d3.pdfEECS 312 Discussion 3 09/20 Shengshuo Lu (luss@umich.edu) Overview •Reminder –HW 1:](https://reader030.vdocuments.us/reader030/viewer/2022040704/5e013543c133215844016246/html5/thumbnails/12.jpg)
Operation Regions – Saturation (lab 2)
1. VGS > VT
2. VGS – VT ≤ VDS
3. Quadratic contribution of VGTto ID
4. channel-length modulation parameter
In case of a P-type MOSFET, the inequalities used above should be directed opposite
![Page 13: EECS 312 Discussion - ziyang.eecs.umich.eduziyang.eecs.umich.edu/eecs312/lectures/dic-d3.pdfEECS 312 Discussion 3 09/20 Shengshuo Lu (luss@umich.edu) Overview •Reminder –HW 1:](https://reader030.vdocuments.us/reader030/viewer/2022040704/5e013543c133215844016246/html5/thumbnails/13.jpg)
Operation Regions – Velocity Saturated
Linear Dependence
-4
V DS (V) 0 0.5 1 1.5 2 2.5
0
0.5
1
1.5
2
2.5 x 10
I D (A
)
VGS= 2.5 V
VGS= 2.0 V
VGS= 1.5 V
VGS= 1.0 V
Early Saturation
Strong electric field causes carrier mobility degradation : Compared to feature scaling, voltage scaling is lagging behind
Short Channel Effects
![Page 14: EECS 312 Discussion - ziyang.eecs.umich.eduziyang.eecs.umich.edu/eecs312/lectures/dic-d3.pdfEECS 312 Discussion 3 09/20 Shengshuo Lu (luss@umich.edu) Overview •Reminder –HW 1:](https://reader030.vdocuments.us/reader030/viewer/2022040704/5e013543c133215844016246/html5/thumbnails/14.jpg)
A unified model
1. If VDS is minimum: Linear region
2. If VGT is minimum: Saturation Region 3. If VDSAT is minimum : Velocity saturated region