CONTENTS

S.No Name of the experiment

CYCLE-I:

1. PN Junction diode characteristics

A. Forward bias.

B. Reverse bias. (Cut-in voltage & Resistance calculations)

2. Zener diode characteristics and Zener as a regulator.

3. Transistor CB characteristics (Input & Output) & h Parameter calculations.

4. Transistor CE characteristics (Input& Output) & h Parameter calculations.

5. Rectifiers without filters (Half Wave & Full Wave).

6. Rectifiers with filters (Half Wave & Full Wave).

CYCLE-II:

1. SCR characteristics.

2. Transistor CE Amplifier.

3. Transistor CC Amplifier (Emitter follower).

4. FET characteristics.

5. UJT characteristics.

1. PN DIODE CHARACTERISTICS

AIM

1. To study the V-I characteristics of a given P-N diode in both forward bias and reverse bias.

2. Find the static and dynamic resistance of the given P-N diode.

APPARATUS:

P-N diode (1N4007), Resistance (100), Regulated power supply (0 to 30V), DC Voltmeter (0 to 1 V), (0

to 30V), DC Ammeter (0 to 200mA), DC Ammeter (0 to 200 A), Bread Board, Connecting wires

SYMBOL OF PN DIODE:

A K

CIRCUIT DIAGRAM:

Procedure:

a) Forward Bias:

1. Connect the circuit as shown in Fig A.

2. Apply the supply voltage, VIN in steps of 0.2V from 0V to 1V,after then vary VIN in steps of 1v

3. Measure the voltage, V across the diode from voltmeter and current I through the diode from ammeter for

different steps of applied voltage, VIN.

4. Draw a graph between the voltage, V and current, I.

5. At suitable operating-point, calculate the static and dynamic resistances of the diode.

b) Reverse Bias:

1. Connect the circuit as shown in Fig ‘B’.

2. Apply the supply voltage, VIN in steps of 3V from 0V to 30V.

3. Measure the voltage, V across the diode from voltmeter and current, I through the ammeter for different steps

of applied voltage, VIN.Draw a graph between the voltage V and current I.

TABULAR FORMS

FORWARD BIAS: REVERSE BIAS:

CALCULATIONS:

1. Static forward resistance, Rf = Vf / If=

2. Static reverse resistance, Rr = Vr / Ir=

3. Dynamic forward resistance = Vf / If =

4. Dynamic reverse resistance = =Vr / Ir =

5. Cut-in voltage of given diode =

.

MODEL GRAPH:

S NO. VF (V) IF (mA) S NO. Vr (V) Ir ( A)

RESULT:

2. ZENER DIODE

AIM

1. To study the V-I characteristics and load characteristics of given Zener diode.

2. To determine Zener break down voltage.

3. To find the reverse resistance.

APPARATUS:

Zener diode (12V/3Watts) – 1, Resistor 100/5Watts – 1, Ammeter (0-100mA) – 1,Multimeter – 1,

Rheostat – 1 ,TRPS – 1

Symbol of Zener diode:

CIRCUIT DIAGRAM:

REVERSE BIAS:

LOAD CHARACTERISTICS:

Vz

I min

I z (max)

I z

VR

Break Down Region

PROCEDURE:

Reverse Bias:

To determine reverse characteristics built up the circuit as shown in the figure.

Increase source voltage Vs so that voltmeter reading advances in steps of 2VV.

Note that corresponding ammeter reading IR for every increment at value of VR.

LOAD CHARACTERISTICS:

To determine load characteristics built up the circuit as shown in figure.

Fix the source voltage V and increase the load resistance in steps.

Note the corresponding ammeter reading IL for every increment at value of VL.

MODEL GRAPH:

REVERSE BIAS: LOAD CHARACTERISTICS:

IL(mA) false conduction region

-----------------------------------------------

True conduction region

VL (v)

CALCULATIONS:

Dynamic forward resistance =

Static forward resistance =

Dynamic reverse resistance =

Static reverse resistance =

RESULT:

3. COMMON BASE TRANSISTOR CHARACTERISTICS

Aim: 1. To plot the input and output static characteristics of transistor in common base configuration.

2. To calculate the h-parameters of transistor in CB configuration

Apparatus required:

S.No Name of the Equipment/Component Quantity

1 Transistor BC107 1

2 Resistors 1KΩ, 1

3 Dual channel Regulated Power Supply(0-30)v 14 Multimeter (0-2)V (0-20)V 15 Ammeters(0-10)mA 26 Bread Board 17 Connecting Wires

Symbol of npn transistor:

Circuit Diagram:

Fig A: Transistor Common Base Configuration

Procedure:

a) Input Characteristics:

1. Connect the circuit as shown in fig 1.

2. Keep the voltage VCB as constant at 1V by varying VCC.

3. Vary the input voltage, VEE in steps of 0.2V from 0V to 1V and then vary VEE in steps of 2v

from 2-10v.

4. Measure the voltage, VBE from multimeter by keeping the switch position in (0-2)v range and

current, IE through the ammeter for different values of input voltages.

5. Repeat the step 3 and 4 for VCE values of 5V

6. Draw input characteristics by taking VEB along X axis and IE along Y axis for tabulated

values.

b) Output Characteristics:

1. Fix input emitter current, IE at constant value say at 0, 2 and 3mA respectively.

2. Vary the output voltage, VCC in steps of 2V from 0V to 20V.

3. Measure the voltage, VCB from multimeter by keeping the switch position in

(0-20)v range and current, IE through the ammeter for different values of VCC.

4. Repeat above steps 2and 3 for various values of different values of IE.

5. Draw output characteristics by taking VCB along X axis and IC along Y axis for

tabulated values.

Tabular Forms:

a) Input Characteristics:

S.No Applied Voltage VEE(V)

VCB = 0V VCB = 5V

VBE (V) IE(mA) VBE(V) IE mA)

1

2

3

4

5

b) Output Characteristics:

S.No Applied Voltage VCC(V)

IE = 1mA IE = 5mA

VCB(V) IC(mA) VCB(V) IC(mA)

123456

Model graphs:

Fig B: Input Characteristics Fig C: Output Characteristics

Model Calculations:

a) Input Characteristics:

b) Output Characteristics:

4. COMMON EMITTER TRANSISTOR CHARACTERISTICS

Aim:

1. To plot the input and output characteristics of transistor in CE configuration.

2. To calculate the h-parameters of transistor in CE configuration.

Apparatus Required:

S.No Name of the Equipment/Component Quantity

1 Transistor BC107 1

2 Resistors 1KΩ, 1

3 Dual channel Regulated Power Supply(0-30)v 14 Multimeter (0-2)V (0-20)V 15 Ammeters(0-10)mA (0-100)A 16 Bread Board 17 Connecting Wires

Symbol of npn transistor:

Circuit diagram:

Fig A: Transistor Common Emitter Configuration

Procedure:

b) Input Characteristics:

1) Connect the circuit as shown in fig 1.

2) Keep the voltage VCE as constant at 1V by varying VCC.

3) Vary the input voltage, VBB in steps of 0.2V from 0V to 1V and then vary VBB in steps of 2v from

2-10v.

4) Measure the voltage, VBE from multimeter by keeping the switch position in (0-2)v range and

current, IB through the ammeter for different values of input voltages.

5) Repeat the step 3 and 4 for VCE values of 5V

6) Draw input characteristics by taking VBE along X axis and IB along Y axis for tabulated values.

c) Output Characteristics:

1. Fix input base current, IB at constant value say at 10A.

2. Vary the output voltage, VCC in steps of 2V from 0V to 20V.

3. Measure the voltage, VCE from multimeter by keeping the switch position in

(0-20)v range and current, IC through the ammeter for different values of VCC.

4. Repeat above steps 2and 3 for I B=20A

5. Draw output characteristics by taking VCE along X axis and IC along Y axis for

tabulated values

Tabular forms:

a) Input Characteristics:

S. No

Applied

Voltage

VBB(V)

VCE = 0V VCE = 5V

VBE(V) IB(μA) VBE(V) IB(µA)

+

V 0-2V

-

B

E

BC107

0-10 mA

- + 0-100µA

+ -

+ 0-30V

TRPS

- Vcc

C

0-30V +

T RPS

VBB

-

1K

(0-20)V

b) Output Characteristics:

S. NoApplied voltage Vcc

(V)

IB = 10μA IB = 20μA

VCE(V) IC(mA) VCE (V) IC(mA)

Model graphs:

Fig B: Input Characteristics Fig C: Output Characteristics

Calculations:

a) Input Characteristics:

b) Output Characteristics:

Result:

5. RECTIFIERS WITHOUT FILTERS (Half wave & Full wave)

AIM:

1. To study the performance of Half-wave rectifier and Full-wave rectifiers without filters.

2. To calculate ripple factor and % of regulation of Half-wave rectifier and Full-wave rectifiers

without filters.

APPARATUS:

Step down transformer (30-0-30/500mA)—1, Rectifier diodes (IN4007)—2, Rheostat (0-500) ---1,

Ammeter (0-500 mA)—1, Digital multimeter (0- 30) V—1, Capacitor 2.2 F---1,AC Voltmeter---1

CIRCUIT DIAGRAM:

HALFWAVE RECTIFIER:

FULLWAVE RECTIFIER:

PROCEDURE:

Half Wave Rectifier:

Construct the circuit diagram as shown in the figure.

1. Find the No-load voltage (VdcNL) by not connecting the load

2. Connect the Rheostat.

3. Note down the Vdc and Vac at different values of Idc (in steps) by varying Rheostat.

4. VdcNL = Vmax/, Ripple factor (r) = Vac/ Vdc; %Regulation = (VdcNL- VdcFL/VdcFL) * 100.

TABULAR FORM: VdcNL = volts

Idc(mA) Vdc(v) Vac (v) r =Vac/Vdc %Regulation

Full Wave Rectifier:

1. Construct the circuit diagram as shown in the diagram.

2. Find the No-load voltage (VdcNL) .

3. Connect the Rheostat.

5. Note down the Vdc and Vac at different values of Idc (in steps) by varying Rheostat.

4. VdcNL = 2Vmax/, Ripple factor (r) = Vac/ Vdc; %Regulation = (VdcNL- VdcFL/VdcFL) * 100.

TABULAR FORM: VdcNL = volts

Idc(mA) Vdc (v) Vac (v) r = Vac/Vdc %Regulation

OUTPUT WAVEFORMS:

RESULT: Output waveforms of half wave rectifier and Full wave rectifier are observed.

Ripple factor of Half wave rectifier = Ripple factor of Full wave rectifier =

% Regulation of Half wave rectifier = % Regulation of Full wave rectifier =

6. RECTIFIERS WITH FILTERS (Half wave & Full wave)

AIM:

1. To study the performance of Full wave and half wave rectifiers with filters.

2. To calculate ripple factor and % of regulation.

APPARATUS:

Step down transformer (30-0-30/500mA)—1, Rectifier diodes (IN4007)—2, Rheostat (0-500) ---1,

Ammeter (0-500 mA)—1, Digital multimeter (0- 30) V—1, Capacitor 2.2 F---1, Electrolytic capacitance--

47F.

CIRCUIT DIAGRAM:

HALFWAVE RECTIFIER:

FULLWAVE RECTIFIER:

PROCEDURE:Half wave rectifier:

1. Connect the circuit as shown in figure.

2. Connect the Capacitor filter and Rheostat.

3. Note down the no-load voltage.

4. Note down Vac and Vdc for different values of Idc by varying Rheostat.

TABULARFORMS:

Idc (mA) Vdc (V) Vac (V) r= Vac / V dc %Regulation

Full wave rectifier:

1. Connect the circuit as shown in figure.

2. Connect the Capacitor filter and Rheostat.

3. Notedown the noload voltage.

4. Note down Vac and Vdc for different values of Idc by varying Rheostat.

TABULARFORMS:

Idc (mA) Vdc (V) Vac (V) r= Vac / V dc %Regulation

OUTPUT WAVEFORMS:

RESULT: Output waveforms of Half wave rectifier and Full wave rectifier with filter are observed.

Ripple factor of Half wave rectifier = Ripple factor of Full wave rectifier =

% Regulation of Half wave rectifier = % Regulation of Full wave rectifier =

7. FET CHARACTERISTICS

AIM:

a). To draw the drain and transfer characteristics of a give FET.

b). To find the drain resistance (rd) amplification factor (μ) and Tran conductance (gm) of the given FET.

APPARATUS: FET (BFW-11)—1, Regulated power supply (0-30V) ----2, Voltmeter (0-20V) ---2,Ammeter (0-

50mA)---1,Connecting wires

CIRCUIT DIAGRAM:

PROCEDURE:

1. All the connections are made as per the circuit diagram.

2. To plot the drain characteristics, keep VGS constant at 0V.

3. Vary the VDD and observe the values of VDS and ID.

4. Repeat the above steps 2, 3 for different values of VGS at 0.1V and 0.2V.All the readings are tabulated.

5. To plot the transfer characteristics, keep VDS constant at 1V.

6. Vary VGG and observe the values of VGS and ID.

7. Repeat steps 6 and 7 for different values of VDS at 1.5 V and 2V.The readings are tabulated.

8. From drain characteristics, calculate the values of dynamic resistance (rd) by using the formula

rd = ∆VDS/∆ID

9. From transfer characteristics, calculate the value of transconductace (gm) By using the formula

Gm=∆ID/∆VDS

10. Amplification factor (μ) = dynamic resistance. Tran conductance μ = ∆VDS/∆VGS

OBSERVATIONS :

DRAIN CHARACTERISTICS

VGS=0V VGS=0.1V VGS=0.2V

VDS(V) ID(mA) VDS(V) ID(mA) VDS(V) ID(mA)

TRANSFER CHARACTERISTICS:

VDS =0.5V VDS=1V VDS =1.5V

VGS (V) ID(mA) VGS (V) ID(mA) VGS (V) ID(mA)

MODEL GRAPH:

TRANSFER CHARACTERISTICS: DRAIN CHARACTERISTICS:

RESULT:

1. The drain and transfer characteristics of a given FET are drawn

2. The dynamic resistance (rd), amplification factor (μ) and Tran conductance (gm) of the given FET

are calculated.

8. SILICON-CONTROLLED RECTIFIER (SCR) CHARACTERISTICSAIM: To draw the V-I Characteristics of SCR

APPARATUS: SCR (TYN410) Regulated Power Supply (0-300V), Regulated Power Supply (0-

30V), Resistors 10kΩ, 1kΩ Ammeter (0-50) mA, Voltmeter (0-10V), Connecting Wires.

CIRCUIT DIAGRAM:

PROCEDURE:

1. Connections are made as per circuit diagram.

2. Keep the gate supply voltage at some constant value

3. Vary the anode to cathode supply voltage and note down the readings of voltmeter and

ammeter. Keep the gate voltage at standard value.

4. A graph is drawn between VAK and IAK.

OBSERVATION

VAK(V) IAK ( µA)

MODEL WAVEFORM:

RESULT: SCR Characteristics are observed.

9. UJT CHARACTERISTICS

AIM: To observe the characteristics of UJT and to calculate the Intrinsic Stand-Off Ratio (η).

APPARATUS:

Regulated Power Supply (0-30V, 1A) - 2Nos

UJT 2N2646

Resistors 10kΩ, 47Ω, 330Ω

Multimeters - 2Nos

Breadboard

Connecting Wires

CIRCUIT DIAGRAM

PROCEDURE:

1. Connection is made as per circuit diagram.

2. Output voltage is fixed at a constant level and by varying input voltage corresponding emitter

current values are noted down.

3. This procedure is repeated for different values of output voltages.

4. All readings are tabulated and Intrinsic Stand-Off ratio is calculated using η = (Vp-VD) / VBB

5. A graph is plotted between VEE and IE for different values of VBE.

MODEL GRAPH:

OBSEVATIONS:

VBB=1V VBB=2V VBB=3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

CALCULATIONS:

VP = ηVBB + VD

η = (VP-VD) / VBB

η = (η1 + η2 + η3) / 3

RESULT: The characteristics of UJT are observed and the values of Intrinsic Stand-Off Ratio

are calculated.

R28.2K

R133K

Vcc+12V

Rc4.7K

RE1K

Vs 20mvCRO

10μF

Cc 10μF

CE100μF

+

-

DRB

10. TRANSISTOR CE AMPLIFIER

AIM: 1.find frequency response of a given circuit diagram.

2. Find the bandwidth.

COMPONENTS: 1.CE amplifier kit

2. Function generator

3. CRO

4. Decade resistance box

CIRCUIT DIAGRAM:

PROCEDURE:

A) Keep Vs = 20mv, s is closed vary input frequency and note down output voltage in the tabular form as

shown. Calculate Gain= Vo/Vi and Gain in db=20log (Vo/Vi)

TABULAR FORMS: Vs = 20mv

Frequency Output (volts) Gain =Vo/Vi Gain in db

1k-100k

MODEL GRAPH:

Gainin dB

3dB

fl fh Frequency

Bandwidth = fh-fl

RESULT:

1. Band width =

Amax

R28.2K

R133K

Vcc =12v

RE10KVs 20mv CRO

10μF

10μF

S2+

-

DRB

11. TRANSISTOR CC AMPLIFIER

AIM:

1. To find the frequency response of CC amplifier.

2. Find the bandwidth of CC amplifier.

COMPONENTS: 1.CC amplifier kit

2. Function generator

3. CRO

CIRCUIT DIAGRAM:

PROCEDURE:

a) Keep Vs = 1v, s is open vary input frequency and note down output voltage in the tabular form as shown.

Calculate Gain = Vo/Vi

TABULAR FORMS:

Vs = 1v

Frequency Output (volts) Gain =Vo/Vi Gain in db

MODEL GRAPH:

Gainin dB

3dB

fl fh frequency

RESULT:

1. Band width =

2. O/P Resistance =

Amax