© 2015 ROHM Co.,Ltd.
Part No. BVDSS RDS (on) ID Max
Package (V) (m (A)
SCT3022KL 1200 22 95
TO-247N SCT3030KL 1200 30 72
SCT3040KL 1200 40 55
SCT3030AL 650 30 70
Part No. BVDSS RDS (on) ID Max
(AEC-Q101*2) Package
(V) (m (A) SCT2750NY 1700 750 6
TL-268-2L SCT2H12NY 1700 1,150 4 SCT2080KEC 1200 80 40
TO-247
SCT2080KEAHR 1200 80 40 Yes SCH2080KEC*1 1200 80 40 SCT2160KEC 1200 160 22 SCT2160KEAHR 1200 160 22 Yes SCT2280KEC 1200 280 14 SCT2280KEAHR 1200 280 14 Yes SCT2450KEC 1200 450 10 SCT2450KEAHR 1200 450 10 Yes SCT2120AFC 650 120 29 TO220AB
Lineup
Lineup
High-speed switching
Features
Low ON-resistance (Small temperature dependency)
Structural Diagram
Structural Diagram
SiC-MOSFETs
Low Switching Loss and ON Resistance Contribute to Greater Energy Savings
SCT2 and SCH2 Series, SCT3 Series SiC-MOSFET 2nd Generation SiC-MOSFETs
Achieves Further Reductions in ON Resistance
Significantly Reduced Switching Loss
0
20
40
60
80
100
120
Si-IGBT SiC-MOSFET
Loss
(W
)
Turn-ON switching loss
Turn-OFF switching loss
Conduction loss
Comparison of loss 30kHz ) When operating at 30 kHz
IGBT 73% Compared to IGBTs loss
reduced by 73%
Turn-ON switching
loss
Turn-OFF switching
loss
Conduction loss
IGBT 73%
Compared to IGBTs Loss Reduced
by 73%
Low body diode Qrr and trr
73% [Si-IGBT , 30kHz ] Significantly reduced power loss by 73% (Compared to Si-IGBTs, when operating at 30kHz)
Tj (Max.) Supports high temperature
Low ON resistance improves inverter power density
Features
High-speed switching
SiC MOSFET 3rd Generation SiC Trench MOSFETs
Minimal reverse recovery behavior of the parasitic diode
Eliminates degradation caused by parasitic diode conduction
Qg Small Qg and parasitic capacitance
*1 Co-packed SiC-SBD *2 AEQ-101 rev.D
: Under Development
N+ P
SiC sub Metal
P+
SiC-Planar MOS
SiC n- Drift layer
Poly-Si
Metal
SiC-Trench MOS
Gate trench
Source trench
SiC n- Drift layer
SiC sub Metal
Poly-Si
Metal
Trade-off curve between RDS (on) and Ciss
Cis
s (p
F)
0 20 40 60 80 100 120 140 160 RDS )
SiC-Planar MOS SCT2080KE 80m V
Trench MOS 1200V 40m
0
P+ P
N+
Trench MOS 1200V 80m
at same chip area Ciss
Ciss
Eliminates degradation caused by parasitic diode conduction
Tj (Max.) Supports high temperature
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www.rohm.co.jp
2015.12.01
