development of reliable, efficient, medium voltage (2.5kv-15kv) sic … psma... · 2016. 1. 15. ·...

Development of reliable, efficient, medium voltage(2.5kV-15kV) SiC power MOSFETs for new applications

Cree Power – Sept 2014 PSMA WebinarCree Power – Sept 2014 PSMA Webinar

Jeff Casady, +001.919.308.2280 or [email protected]

Copyright © 2014, Cree Inc.1

• SiC MOSFETs at Cree – a brief introduction

– Existing portfolio

– Reliability

– Existing portfolio applications

• Future SiC MOSFET products – scaling to medium

Outline

2

voltage

– SiC MOSFET ratings compared to Si IGBT ratings

– Engineering sample status medium voltage SiC MOSFETs

– Example application using medium voltage SiC MOSFETs

Cree SiC Diode Portfolio Beginning in 2002

Package Styles:• TO-220• TO-247• Full-PAK• DPAK (TO-252)• D2PAK (TO-263)• QFN (surface mount)

>70 products and growing

• 50 Amp Chip Set Released 2013

– CPW5-0650-Z0 50B: 650V, 50A Schottky Diode

– CPW5-1200-Z050B: 1200V, 50A Schottky Diode

– CPW5-1700-Z050B: 1700V, 50A Schottky Diode

• QFN (surface mount)• Isolated TO-220

Bare Die for Modules:2A – 50 A; 650-1700V

pg. 3Copyright © 2014 Cree, Inc.

1200V MOSFETs (Bare Die)

− CPM2-1200-0025 (25mΩ; 60A)

− CPM2-1200-0040 (40mΩ; 40A)

− CPM2-1200-0080 (80mΩ; 20A)

− CPM2-1200-0160 (160mΩ; 10A)

1200V MOSFETs (TO-247)

Cree SiC MOSFET Portfolio Beginning in 2011 4>13 products and growing

1200V MOSFETs (TO-247)

− C2M0025120D (25mΩ; 60A)

− C2M0040120D (40mΩ; 40A)

− C2M0080120D (80mΩ; 20A)

− C2M0160120D (160mΩ;10A)

− C2M0280120D (280mΩ; 7A)

1700V MOSFETs

− C2M1000170D (1Ω, 3.0A) TO-247

− CPM2-1700-0040 (40mΩ; 50A) Bare Die – now sampling

pg. 4

50 mm Platform Half-Bridge Configuration− CAS100H12AM1 (1200V, 100A)

− XAS125H12AM2 (1200V, 125A)

− XAS125H17AM2 (1700V, 125A)

45 mm Platform 6-Pack Configuration

Cree All-SiC Power Module Portfolio Beginning in 2012 5> 7 products and growing

45 mm Platform 6-Pack Configuration− CCS050M12CM2 (1200V, 50A 6-pk)

− CCS020M12CM2 (1200V, 20A 6-pk)

62 mm Platform Half-Bridge Configuration− CAS300M12BM2 (1200V, 300A)

− CAS300M17BM2 (1700V, 250A)

pg. 5

Cree 1700V, 8mΩ, ½ bridge power module released6

Full commercial release –September 2014

Gate drivers, app notesavailable

First all-SiC power modulereleased commercially @1700V1700V

Available globally – Digikey, Mouser,Richardson/Arrow (right), …

2 channel; 1.2/1.7 kV 62 mm modulegate driver direct mount

pg. 6

SiC MOSFET Reliability Data

Section

SiC MOSFET Reliability Data

7Copyright © 2012, Cree Inc.

Proven Reliability with Industry-Leading Standardspg. 8

Cree Field Failure Rate Data since Jan. 2004through Mar. 2014

• 0.12 FIT rate is 10 times lower than the typical silicon

• SiC diodes first released in 2001

• SiC MOSFETs first released in 2011Copyright © 2014, Cree, Inc.

Reliability Meets All Commercial and Military Requirements

Tim

e(H

ou

rs)

Tim

e(H

ou

rs)

Accelerated HTRB Testing at 150°C Accelerated TDDB Testing at 150°C

Tested to failureat very high

Drain voltages

Tested tofailure at

very high G-S voltages

• MOSFETs have extrapolated MTTF of 30 million hours

• Gate oxides have extrapolated MTTF of 8 million hours at +20V continuous

9Copyright © 2014, Cree, Inc.

C2M VTH Stability at High Temperature, +/- DC Biaspg. 10

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VT

H(V

)

In-Situ Monitored Data

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VT

H(V

)

In-Situ Monitored Data

VGS = -15VT = 150°C

Positive Bias Accelerated at 175°C Negative Bias Accelerated at -15V

VGS = +20VT = 175°C

• Extremely stable for 1,000 hours under positive and negative bias

– Accelerated beyond data sheet to see any measurable change

– Average shift under positive bias: DVTH = 0.06 V, DRDS-ON = 0.1 mΩ

– Average shift under negative bias: DVTH = 0.01 V, DRDS-ON = 3.2 mΩ

Copyright © 2014, Cree, Inc.

0.0

0.5

0 200 400 600 800 1000Time (hr)

0.0

0.5

0 200 400 600 800 1000Time (hr)

T = 175°C

60%

80%

100%

%o

fIn

tro

du

cti

on

Co

st

Cost reduction from volume and device refinement

Gen 2Schottky

Gen 1MOSFET

Gen 1Schottky

600V Schottky1200V Schottky MOSFET

0%

20%

40%

2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016

%o

fIn

tro

du

cti

on

Co

st

150 mm100mm

75mm

Gen 5Schottky

Gen 3Schottky

Gen 4Schottky

Wafer Diameter Increases

Solid Lines = ActualDotted Lines = Projections

Gen 2MOSFET


Existing MOSFET Portfolio

Section – Partial Listing of

Existing MOSFET PortfolioApplications

Copyright © 2012, Cree Inc.pg. 12

Benefits of SiC in power electronics arecompelling in 10 to 50 kW boost stage

BOM cost decreases

Size, weight & losses all decrease

C2M0080120D compared to H3 IGBT*

1200V SiC MOSFET impact to 10-50 kW boost

Size Weight BOM Losses Temperature

10 kW 50% ↓ 40% ↓ 10-20% ↓ 20% ↓ 30% ↓

50 kW 50% ↓ 60% ↓ 10-18% ↓ 40% ↓ 40% ↓

* Reference: J. Liu (PCIM 2013)

C2M0080120D compared to H3 IGBT*

pg. 13

1200V SiC MOSFET design wins in PV inverters

1200V, 80mΩ SiC MOSFETs have been selected by Japan’s Sanix Inc.

PV Inverters- lower losses, costs

“Through this partnership with Cree and their SiC technology, Sanix is able to capture more marketshare in the competitive Japan solar market,” says Sanix’s general manager Hiroshi Soga. “Cree’s... SiC switches reduced losses in our inverter electronics by more than 30% versus the siliconsuper-junction MOSFETs we were considering…”

9.9kW three-phase solar inverters

Higher power density, lower losses

- better performance

Sept 2014 press releaseApril 2013 press release

pg. 14

1200V MOSFET design wins-induction heating

“The drop-in feature of Cree’s new all-SiC power module allows us to achieve 99percent efficiency while reducing the power module count by a factor of 2.5 in ourexisting HF induction heating systems,” said John K. Langelid, R&D manager, EFDInduction. “These benefits are greatly valued as a reduced cost of ownership by our endcustomers.”

Induction Heating power supplies- 2.5X lower part count

- better implied reliability- Reduction in power losses- Reduced COO

May 2014 press release

pg. 15

1200 V SiC MOSFETs used in on-board DC/DC converter

For HEV/EV bus (Shinry)

Silicon SiC

pg. 16Copyright © 2014, Cree, Inc.

• DC-DC topology with 1200 V SiC MOSFET (C2M0080120D)

• Active clamp forward topology with 750 V DC in / 27 V DC out

• SiC MOSFET enabled:

• ↑ efficiency from 88% to 96%

• ↓ size and weight by 25% - 60%

• ↓ both cost and audible noise

• Eliminated cooling fans

Compact demo 8 kW EV using 1200 V SiC MOSFET

InputResonant TankLm Cr

SiC MOSwith heatsink

SiC SBD

• 8 kW

• 98.1% eff

• 260kHz

Ref: J. Liu, PCIM 2014

Board Size of 8 kW Full Bridge LLCResonant Converter using SiC(Size: 8”x12.5”x3.5” ) – > 35 W / in3

Output

Lr

Controller Gate Driver

• 260kHz

pg. 17

1200 V SiC MOSFETs used in 8 kW EV charger demo

1200 V SiC MOSFET (C2M0160120D) enables:

• Simpler topology, ½ the components, 260 kHz, (> 35W/in3)

• Lower system cost, > 98.1% efficient

• Not possible to do this in silicon

Items 3-level FB w/ Si MOS@ 120kHZ resonant freq.

2-level FB w/ SiC MOS@ 260kHZ resonant freq.

CREE SiC MOSFET in Full Bridge LLC ZVSResonant Converter – J. Liu, PCIM 2014

@ 120kHZ resonant freq. @ 260kHZ resonant freq.

MOSFETs→ 650 V Si SPW47N60CFD in 3 level→ 1200 V SiC C2M0160120D in 2 level

16 pcs 8 pcs

Flying diode 4 pcs None

Resonant Inductor(PQ3535)

2 pcs 1 pc Lr=15uH

Magnetize transformer 2 pcs PQ5050 1 pcs PQ6560 Lm=100 uH

Resonant Capacitors 35nF 25 nFMOS Drivers 8 pcs 4 pcs

Peak efficiency 97.8% 98.1%

pg. 18

Future SiC MOSFET products –

Section –

Future SiC MOSFET products –scaling to medium voltage

19Copyright © 2012, Cree Inc.

SiC amp ratings are much less than Si

300 Amp SiC More Capable than 600 Amp Si IGBTs!

150

200

250

300

350

Loss

es(W

atts

)

Diode

Switching

Si Amps are not SiC Amps

• System cost reduction of 20% using 1200V SiC

– Increased frequency reduces size and weight of magnetics

– Lower losses reduce system cooling requirements

– Amperage rating for SiC less than half required for Si IGBTs

0

50

100

SiC MOSFET 300 Amp,10 kHz

Si IGBT 600 Amp,3 kHz

Conduction

Copyright © 2014, Cree, Inc.20

SiC voltage ratings are much less than Si?

Semiconductor PowerDevices: Physics,Characteristics,ReliabilityBy Josef Lutz, HeinrichSchlangenotto, Uwe

Si Volts are not SiC Volts6.5 kV Si IGBT usedfor 3.6 kV drives (100cosmic ray FIT rate)

4.5 kV SiC MOSFETused for 3.6 kV line?

10 kV SiC MOSFET

• Medium Voltage SiC MOSFET roadmap must respond to application

– 10X higher switching frequency, lower thermal dissipation possible

– Cosmic ray, other reliability metrics may be 100X better

– All requirements, eg. short circuit, surge must be understood

Copyright © 2014, Cree, Inc.21

Schlangenotto, UweScheuermann, Rik DeDoncker

10 kV SiC MOSFETused for 7.2 kV?

Next Generation SiC MOSFETs

P-Well

N+ N+

Source

Source Contact Metal

Degenerately doped Poly Si Gate

Inter-metal Dielectric

Gate Oxide

P-Well

N+ N+

Source

Source Contact Metal

Degenerately doped Poly Si Gate

Inter-metal Dielectric

Gate Oxide

Optimized doping

Smaller pitch

Gen 2 DMOS R&D DMOS

Same high reliability DMOS Structure, butoptimized to dramatically reduce die size

N+ 4H SiC Substrate

Drain Contact Metal

N+ 4H SiC Substrate

Drain Contact Metal

Commercially released in 2013

Reference: J. Palmour, et al (ISPSD 2014)Copyright © 2014, Cree, Inc.

pg. 22

8

10

12

cm

2)6

8

10

12

ON

,SP

(mWc

m2)

GenGen--11IntroductionIntroduction

100%61%

42%

GenGen--22RevolutionRevolution

R&DR&D

0

2

4

6

8

Gen-1Planar DMOS

(Product, 2011)

Gen-2Planar DMOS

(Product, 2013)

Gen-3Planar DMOS(R&D, 2014)

8.0

4.8

2.7

11.0

8.9

4.9

RO

N,S

P(m

Wc

m

0

2

4

0 25 50 75 100 125 150

RO

N,S

P

TJ (°C)

1200 V, 80 mW, SiC DMOSFETs

at VG = 20 V, ID = 20 AReference: J. Palmour, et al (ISPSD 2014)

Copyright © 2014, Cree, Inc.pg. 23

100Wc

m2)atV

G=

20

V 10 kV

15 kV

6.5 kV

R&D MOSFETs Set New Standard for Lowon-Resistance in SiC

1

10

100 1,000 10,000

RO

N,S

P(m

W

Breakdown Voltage (V)

3.3 kV

900 V

Gen 2, C2MFamily 1.2 kV

Gen 1, 1.2 kV

1.2 kV


Reference: V. Pala, et al (ECCE 2014)

pg. 24

3.3 kV, 40 mΩ, “40 A” MOSFET Engineering Samplespg. 25


3.3 kV SiC MOSFET DC Characteristics

15

20

25

30

I D(A

)

ID(0V)

ID(4V)

RON,SP = 10.6 mWcm2 at VG = 20 V

6

8

10

A)

at

VG

=0

V

9.16 mm

5.1

mm

4161 V @ 10.2 Aat VG = 0 V

0

5

10

0 1 2 3

VD (V)

ID(4V)

ID(8V)

ID(12V)

ID(16V)

ID(20V)

Blocks 4.16 kV with Rds(on) of 10.6 mWcm2 !

0

2

4

0 1000 2000 3000 4000

I D(

A)

at

VBVDS (V)

5.1

mm


pg. 26

3.3 kV/40 A SiC DMOSFET Switching

0

50

100

150

200

Dra

in-S

ou

rce

Cu

rre

nt(A

)

TJ = 25 C

TJ = 100 C

TJ = 150 C

VDS = 20 V

Switching at 1800V, 25A

0

0 5 10 15 20

Gate-Source Voltage, VGS (V)

0

0.5

1

1.5

2

2.5

3

25 50 75 100 125 150

On

Re

sist

ance

,RD

SO

N(p

.u.)

Junction Temperature, TJ (C)

IDS = 28 A

VGS = 20 Vtp < 50 μs


pg. 27

40

50

60

70

80

D(

A)

~ 6.8 kV @ 67 A

at VG = 0 V

6.5kV, 25A SiC MOSFET

RON,SP=50 mWcm2 at VG=20 V, RT

40

50

60

70

80

I D(A

)

ID(0V)

ID(5V)

ID(10V)

ID(15V)

ID(20V)

7.20 mm

Adie=0.54 cm2, Aact=0.3 cm2

0

10

20

30

0 1 2 3 4 5 6 7

I DBVDS (kV)

Blocks ~ 6.8 kV with Rds(on) of 50 mWcm2 !

0

10

20

30

0 2 4 6 8 10 12 14

I

VD (V)

7.2

0m

mReference: J. Palmour, et al (ISPSD 2014)


10 kV, 300 mΩ, “20 A” MOSFET Engineering Samplespg. 29


15

20

25

30

I D(A

)

ID(0V)

ID(4V)

ID(8V)

ID(12V)

ID(16V)

ID(20V)

RON,SP=86 mWcm2 at VG=20 V, RT

30

40

50

60

70

80

I D(

A)

11.06 kV @ 75 A

at VG = 0 V

Adie=0.54 cm2, Aact=0.28 cm2

10kV, 20A improved SiC MOSFET

0

5

10

0 2 4 6 8 10

VD (V)

0

10

20

30

0 2 4 6 8 10 12

BVDS (kV)

Blocks ~ 11 kV with Rds(on) of 86 mWcm2 !Reference: J. Palmour, et al (ISPSD 2014)


10 kV Improved SiC MOSFET Switching Performance

Turn-Off

Turn-On

Deliver > 50% amps with 40% smaller Adie

than Gen-1, 10kV DMOS at 250 W/cm2

> 40x lower Esw than the 6.5kV Si-IGBTReference: J. Palmour, et al (ISPSD 2014)


15 kV/10 A SiC DMOSFET Development

20

0

2

4

6

8

10

12

14

0 2 4 6 8

Dra

inC

urr

en

t(A

)

Drain Voltage (V)

10 V

5 V

0 V

15, 20 V

RON,SP=208 mWcm2

VG=20V, RT

Design optimization allows BV of 15kV

with the same Adie than Gen-1, 10kV

DMOSFETs

Reference: J. Palmour, et al (ISPSD 2014)

0

2

4

6

8

10

12

14

16

18

20

4 5 6 7 8 9 10 11 12 13 14 15

Sw

itch

ing

Lo

ss(m

J)

Bus Voltage (kV)

EON, 10A

EON, 5A

EOFF, 5AEOFF,10A

15 kV SiC DMOSFETDrain Voltage (V)

0.0E+00

2.0E-08

4.0E-08

6.0E-08

8.0E-08

1.0E-07

1.2E-07

1.4E-07

1.6E-07

1.8E-07

2.0E-07

0 2000 4000 6000 8000 10000 12000 14000 16000

Dra

inC

urr

en

t(A

)

Drain Voltage (V)

Adie: 0.63 cm2, AAct: 0.32 cm2

15.5 kV @ < 0.2 A


Eliminate Switching Losses with SiC MOSFETs

• 25x smaller switching losses compared to 6.5 kV IGBTs

Device Max TJ

BusVoltage

RatedCurrent

VDSON @Max TJ

ESW,ON ESW,OFF ESW,TOT

6.5 kV125 C 3.6 kV 25 A 5.4 V 200 mJ 130 mJ 330 mJ


6.5 kV

Si IGBT125 C 3.6 kV 25 A 5.4 V 200 mJ 130 mJ 330 mJ

10 kV

SiC MOSFET150 C 7 kV 20 A 10.2 V 8.4 mJ 1.3 mJ 9.7 mJ

15 kV SiC MOSFET 150 C 10 kV 10 A 16.3 V 10.2 mJ 3 mJ 13.2 mJ

Reference: V. Pala, et al (ECCE 2014)

SiC MOSFETs : >2x Voltage, 10x Frequency Compared to Silicon

80

100

120

140

Ma

xim

um

Sy

stem

Po

wer

(kW

)

Power Capability vs Frequency for Hard Switched Topologies

• Power is bus voltagetimes current

• Maximum currentlimited by thermal chiplimit

• 6.5kV and 4.5kV SiCMOSFETs will providefurther advantage over


0

20

40

60

1 10 100

Ma

xim

um

Sy

stem

Po

wer

(kW

)

Switching Frequency (kHz)

10x

Reference: V. Pala, et al (ECCE 2014)Copyright © 2014, Cree, Inc.

further advantage overSi IGBT

• Analysis assumedhard switched ½bridge invertertopology

Future Target Applications

Section –

Future Target Applications


• AC Medium Voltage Drives Applications

• Railway Applications (3.3 kV SiC already being adopted in rail)

• Grid-tied Solar Applications

• HVDC Applications (Off-shore wind, hydro, …)

• Grid-tied Power Distribution (Energy-intensive structures such as factories, data centers)

Application Market Pull for MV SiC from:

Transport Electrification Energy Distribution Rail & Grid-tied Energy

pg. 36Copyright © 2014, Cree, Inc.

10 kV SiC MOSFETs in Boost Converter (Fraunhofer ISE)

Copyright © 2014, Cree Inc.

A Highly Efficient DC-DC-Converter for Medium-Voltage ApplicationsJürgen Thoma, David Chilachava, Dirk Kranzer

ENERGYCON 2014 • May 13-16, 2014 • Dubrovnik, Croatia

Advantages of medium voltage DC distribution:• Flexible subunit power rating from a few kW to > 2 MW• Smaller, lighter, cheaper power cables with higher voltage• Eliminate large, heavy, costly transformer• Reduce number of system components

pg. 37

10 kV SiC MOSFETs in Boost Converter (Fraunhofer ISE)

• Fraunhofer DC-DC converter used 10kVSiC MOSFETs from Cree

• 30 kW DC voltage converter with 3.5 kVinput voltage, 8.5 kV output voltage,

Efficient, “transformer-less” power distribution tomedium voltage grid

Copyright © 2014, Cree Inc.

input voltage, 8.5 kV output voltage,98.5% efficient

• 8kHz switching frequency 15X higherthan possible with conventional silicondevices in the same voltage range.

Box is 36 cm x 30 cmA Highly Efficient DC-DC-Converter for Medium-Voltage Applications

Jürgen Thoma, David Chilachava, Dirk KranzerENERGYCON 2014 • May 13-16, 2014 • Dubrovnik, Croatia

pg. 38

development of reliable, efficient, medium voltage (2.5kv-15kv) sic … psma... · 2016. 1. 15. ·...

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