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2010 MSD Annual Review

Modeling of SiGe material for ultra-scaled CMOS device applications

A. Paul, S. R. Mehrotra, Z. Jiang, M. Luisier and G. Klimeck Purdue University and NCN

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Why SiGe material ? Electronic Structure : VCA method Transport in Core/Shell SiGe/Si – TB VCA

Random Alloy Treatment (RAT) SiGe bond length benchmarking Bulk SiGe bandedges using supercell

Alloy Scattering Alloy Scattering Potentials from RAT Transport in Alloy: Green’s Function

Comparison of Transmission Transmission to terminal characteristics Conclusion and Future Work