Institut des NanoSciences de ParisCNRS et Universités de Paris 6 et 7
Isotopes and ion beams in the study of dielectric/semiconductor interfaces.
Ian Vickridge
Système d’Analyse par Faisceau d’Ions Rapides
Institut des NanoSciences de ParisParis, France
H.J. von Bardeleben, J.-L. Cantin, C. Deville, J.-J. Ganem, M. D'Angelo, and I. Trimaille.
Institut des NanoSciences de ParisCNRS et Universités de Paris 6 et 7
Growth => atomic transport
Isotopes - 6/7Li, H/D, 3/4He, 10/11B, 12/13C, 14/15N, 16/17/18O, 25/26Mg, 28/29/30Si
Growth => défauts electron paramagnetic resonance
First steps Deposition
Chemical reaction : thermodynamiques, kineticsDiffusion, atomic transportÉpitaxy, chemical order
Structure, composition of the surface
2D mobility, transport
Thermal growth
Sticking/chemical reactionInterface formationEpitaxy (or not …)
heat
Internal surfaces : interfaces of composition, structure
Defects, stress, relaxation
treatment under controlled atmosphere
Thin film growth processes
Institut des NanoSciences de ParisCNRS et Universités de Paris 6 et 7
Thermal oxidation of Si and SiC
Diffusion barrier
n+n+
gate dielectric
Plug
CapacitorVery high material
Electrodes
29Si, Si13C
SiO2
16/17/18O2
+ + + + +
- - - - -
dVV
d
Gate electrode
MOSFET
+ + + + +
SiO2/Si• High technological interest• Système modèle• Système très très étudié
- - - - -
Institut des NanoSciences de ParisCNRS et Universités de Paris 6 et 7
Manipulation of the interface Si(nano)/SiO2
(with B. Gallas, C. Kao, and I. Stenger, INSP)
SiO2/Si Interface
amorphous silica doped Er3+
15NH3, 15N18O 13C18O, 17/18O2 etc
First experiments underway
Study the effects of interface modification on nano-cristaux->Er3+ energy transferFormation of nanocristals of SiC, or Si with SiC (13C …) 'skin'Modification grain size by selective oxidation and oxynitridation
Isotopes, Accel, EPR (large internal surface), TEM, ellipsometry, photoluminescence etc…
pumptransfer ?
Emission 1.54 mtelecoms …
Institut des NanoSciences de ParisCNRS et Universités de Paris 6 et 7
Tracing with 29Si,Manipulation of the SiC/SiO2 interface
SiC
29Si deposited or implanted
(CSNSM, Orsay)
oxidation
SiCSiO2
SiCSiO2
Ar, NO, CO, NH3, …
then, 18O2 as probe of chemical reactivity of interface
Initial experiments recently performed : results most promising
Institut des NanoSciences de ParisCNRS et Universités de Paris 6 et 7
SiC nano-crystals
SiSiO2
CO1100°C
With G. Battisitig, A Pongracz, Z. HajnalMFA-KFKI, Budapest
SiC nano-crystals epitaxially embedded in Si
SEM image after chemical removal of SiO2 overlayer
29Si substrate, Si16O2,Si18O2, 12C16O, 13C18O …
Institut des NanoSciences de ParisCNRS et Universités de Paris 6 et 7
SiC nanocrystals SiC nanocrystals SiOSiO22/Si thermal/Si thermal
• (100)
• (111)
• (110)
Growth mechanisms?Atomic transport mechanisms?Kinetics, activation energies?
Institut des NanoSciences de ParisCNRS et Universités de Paris 6 et 7
13C Analysis (work in progress!)
13C(p,p)13C Strong resonance (50-100 R) at backward angles near 1.5 MeVMilne PhysRev 1954 in Jarjis, numerous pre-1956 data in Jarmie and Seagrove
13C(p,)13C Strong narrow (~ 100eV) resonance at 1.746 MeVNucl Data Tables Ajzenberg-Selove, applies in Vickridge thesis
13C(,)13CStrong resonance around 2.7 MeV at backward angleBarnes PhysRev 1965 and Kerr PhysRev 1968 in IBANDL
Institut des NanoSciences de ParisCNRS et Universités de Paris 6 et 7
13C Analysis
13C(d,p)13C Qm=5952 keV
400 600 800 1000 1200 1400 16000
2
4
6
0
2
4
6
0
2
4
6
400 600 800 1000 1200 1400 1600
Incident Energy (keV)
Dif
fere
ntia
l Cro
ss S
ecti
on (
mb/
sr)
13C(d,p0)14C
This work Marion 1956
(a)
(b)
(c)
= 135°
= 150°
= 165°
Useful yield in sub 2 MeV range.Marion PhysRev 1956 and Colaux et al NIMB and IBANDL
Institut des NanoSciences de ParisCNRS et Universités de Paris 6 et 7
13C Analysis13C(d,)11B Q0= 5167.89 keV
Q1= 3043.2Q2= 722.9
400 600 800 1000 1200 1400 16000
3
6
9
12
150
3
6
9
12
150
3
6
9
12
15
400 600 800 1000 1200 1400 1600
(c)
= 165°
13C(d,0)11B
Incident Energy (keV)
(b) = 150°
Dif
fere
ntia
l Cro
ss S
ecti
on (
mb/
sr)
(a)
This work Marion 1956
= 135°
Useful yield in sub 2 MeV range.Marion PhysRev 1956 and Colaux et al NIMB and IBANDL
Institut des NanoSciences de ParisCNRS et Universités de Paris 6 et 7
13C Analysis - Summary
13C(p,)13C No further work required from ND perspective ?
13C(p,p)13C Useful looking resonance at 1.5 MeV.New measurements needed? ()? Evaluation?
13C(,)13C Useful looking resonance near 2.7 MeV.New measurements needed? ()? Evaluation?
13C(d,p)14C Useful below 2 MeV. Further measurements needed for succesful valuation?
13C(d,)11B Useful below 2 MeV. Some discrepancies. Further measurements needed for succesful valuation?
Institut des NanoSciences de ParisCNRS et Universités de Paris 6 et 7
15N Analysis (work in progress too!)
15N(p,)12C Wonderful narrow (=100eV) resonance at 429 keVwidely used by several groups
15N(p,p)15N useful? resonance near rising to near 3.5 R near 900 keVHagendorn PhysRev 1957 in Jarjis
15N(,)15N Useful? resonance near1900 keVSmotrich PhysRev 1961 from IBANDL
Institut des NanoSciences de ParisCNRS et Universités de Paris 6 et 7
15N Analysis
15N(d,p)16N Q0= 264.53 keV Unusable
900 1000 1100 1200 1300 1400 15000
5
10
15
20
25
30
35
40
45
50
(m
b.sr
-1)
Energy (leV
15N(p,0)12C. Sawicki NIMB from IBANDL15N(p,0)12C Q0= 4965 keV Useful cross section. Widely used.Sawicki NIMB in IBANDL
Institut des NanoSciences de ParisCNRS et Universités de Paris 6 et 7
15N Analysis
15N(d,0)13C Q0= 7687 keV Useful below 2 MeVSawicki, Vickridge NIMB in IBANDL
Institut des NanoSciences de ParisCNRS et Universités de Paris 6 et 7
15N Analysis - Summary
15N(p,)12C No further work required from ND perspective?
15N(p,p)15N
15N(,)15N
15N(d,0)13C
Useful looking resonance near 900 keV.New measurements needed? ()? Evaluation?
Possibly useful resonance near 1900 keV.New measurements needed? ()? Evaluation?
Useful below 2 MeV for profiling thicker samples. Some discrepancies, further measurements needed for succesful valuation?