Download - Analog front-end chip for GEM detectors
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ANALOG FRONT-END CHIP FOR GEM DETECTORS
E. Atkin, E. Malankin, V. ShumikhinNRNU MEPhI, Moscow
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OUTLINE
GEM Chip structure Channels structure Test benches Experimental data Summary
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GEM DETECTORS
Cross-section of a triple GEM detector
P. Abbon et al. / NIM (2007) 455–518
~50 µm
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CBM
Muon system of the international CBM experiment, being designed on the new accelerator facilities at FAIR GSI (Darmstadt, Germany), built on the base of the gaseous detector of high resolution. Muon System consists of about 1 million channels. For the Muon System signals read-out ASIC application is neccesary.
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CBM
Muon system of the international CBM experiment, being designed on the new accelerator facilities at FAIR GSI (Darmstadt, Germany), built on the base of the gaseous detector of high resolution. Muon System consists of about 1 million channels. For the Muon System signals read-out ASIC application is neccesary.
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CBM
Muon system of the international CBM experiment, being designed on the new accelerator facilities at FAIR GSI (Darmstadt, Germany), built on the base of the gaseous detector of high resolution. Muon System consists of about 1 million channels. For the Muon System signals read-out ASIC application is neccesary.
~1 million channels
↓~15 000 ASICs x
64 ch.
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CBM
Muon system of the international CBM experiment, being designed on the new accelerator facilities at FAIR GSI (Darmstadt, Germany), built on the base of the gaseous detector of high resolution. Muon System consists of about 1 million channels. For the Muon System signals read-out ASIC application is neccesary.
~1 million channels
↓~15 000 ASICs x
64 ch.
Front-end forMUCH
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SPECIFICATIONS Input signal range of 1.5-100 fC Charge polarity – negative ENC – less than 0.3 fC Detector capacitance up to 100 pF Maximum hit rate/channel – 2 MHz Power consumption – 2 mW/ch
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CHIP STRUCTURE
1.5 CSA + stand alone Shaper channels (Preamp ver. 1)
2.5 CSA channel with built-in shaping (Preamp ver. 2)
3.OpAmp block4.Digital test
structures
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CHANNEL STRUCTUREPREAMP VER.1
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CSA CORE
• Input transistor – nMOS (7mm * 360 nm) • Common source stage• Folded boost current amplifier • Output source follower
Feedback: gain setting cap + discharge transistor to set the maximum hit rate of channel not less than 2 MHz
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SHAPER
Noninverting 2nd order
Sallen-Key filter
The shaper has two additional adjustments:- TAIL – tail cancellation- SH_BL – baseline tuning
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PREAMPVER.2
• Input transistor – nMOS (4mm * 360 nm) • Common source stage• Folded boost current amplifier • Output source follower
Feedback: gain setting cap + discharge resistor to set the maximum hit rate of channel not less than 2 MHz
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CHIP LAYOUT
• CLCC68 Package• Die–1525 x 1525 μm2
• UMC 180 nm CMOS MMRF process• 2012 run of Europractice
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TESTBOARD
CLCC Socket
LDO regulato
r
1 pF capacita
nceDetector capacita
nce emulatio
n
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TESTBOARD
CLCC Socket
LDO regulato
r
1 pF capacita
nceDetector capacita
nce emulatio
n
Reference potentiome
ters
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OUTPUT RESPONSES (VER.1)Input charge swept from 25 to 70 fC
CSA CSA & Shaper
Shaper
CSA
Voltage pulser
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TRANSFER FUNCTION (VER.1)• Dynamic range – 1.5 – 100 fC• Integral nolinearity ~ 4%
ShaperChannel gain ~ 6
mV/fC
CSACSA gain ~ 2.5
mV/fC
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RMS NOISE MEASURMENTS (VER.1)
Aim: Cin >> Cdet
Estimation: CSA open-loop gain ≥ 1400
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CSA OUTPUT RESPONSE & TRANSFER FUNCTIONVER.2
transfer functionCSA gain ~ 5 mV/fCCSA output
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NOISE ESTIMATION
PreAmp (ver. 1)ENC – 875е Cdet = 1p 2427e Cdet = 100p
PreAmp (ver. 2)ENC – 1070е Cdet = 1p 2500e Cdet = 100p
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TESTBOARD WITH GEM*
Socket with Chip
GEM Anode
Pad area 5x5 mm2
Pad capacitance 12 pF
Gas chamber
with Ar/CO2 *Testboard designed by PNPI
team
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TESTS WITH 55FE SOURCE*
55 Fe amplitude spectrum, obtained
by the preamplifier & GEM.
*tests provided by PNPI team
Preamplifier output
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SUMMARY Designed and prototyped 2 versions of read-out with preliminary CBM MUCH specifications:
Preamplifier (ver.1)
Preamplifier (ver. 2)
Gain 6 mV/fC; 5 mV/fCInput signal range
1.5-100 fC; 1.5-100 fC;
Maximum channel rate
2 MHz 2 MHz
Power consumption
1.2 mW/channel 2 mW/channel
ENC Cdet = 1p Cdet = 100p
875е 2427e
1070е2500e
Area on chip 1050 x 100 µm 200 x 100 µm
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THANKS FOR YOUR ATTENTION...