Download - 2SC1846
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Power Transistors
2SC1846
Silicon NPN epitaxial planar type
For medium output power amplification
Complementary to 2SA0885
Features
Low collector-emitter saturation voltage VCE(sat) Output of 3 W can be obtained by a complementary pair with
2SA0885
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
Absolute Maximum Ratings Ta=25C
Electrical Characteristics Ta=25C 3C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC=1 mA, IE=0 45 V
Collector-emitter voltage (Base open) VCEO IC=2 mA, IB=0 35 V
Collector-base cutoff current (Emitter open) ICBO VCB=20 V, IE=0 0.1 A
Collector-emitter cutoff current (Base open) ICEO
VCE
=20 V, IB=0 100 A
Emitter-base cutoff current (Collector open) IEBO VEB=5 V, IC=0 10 A
Forward current transfer ratio hFE1* VCE=10 V, IC=500 mA 85 340
hFE2 VCE=5 V, IC=1 A 50
Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB=50 mA 0.5 V
Transition frequency f T VCB=10 V, IE=50 mA, f =200 MHz 200 MHz
Collector output capacitance Cob VCB=10 V, IE=0, f =1 MHz 20 pF
(Common base, input open circuited)
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
8.0+0.50.1
1.
90.
1
3.
050.
1
3.
80.
3
11.
00.
5
16.
01.
0
3.20.2
0.750.10.50.1
2.30.24.60.2
0.50.1 1.760.1
1 2 3
3.160.1
Rank Q R S
hFE1 85 to 170 120 to 240 170 to 340
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 45 V
Collector-emitter voltage (Base open) VCEO 35 V
Emitter-base voltage (Collector open) VEBO 5 V
Collector current IC 1 A
Peak collector current ICP 1.5 A
Collector power dissipation PC 1.2 W
5.0 *
Junction temperature Tj
150 C
Storage temperature Tstg 55 to+150 C
Note) *: With a 100 100 2 mm Al heat sink
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2SC1846
PCTa ICVCE ICIB
VCE(sat)IC VBE(sat)IC hFEIC
fTIE CobVCB VCERRBE
0
6
5
4
3
2
1
0 20040 80 160120
Collectorpowerdissipati
onPC
(W)
Ambient temperature Ta (C)
(1)With a 1001002mm
Al heat sink
(2)Without heat sink
(1)
(2)
0
1.50
1.25
1.00
0.75
0.50
0.25
0 102 4 86
CollectorcurrentIC(A)
Collector-emitter voltage VCE (V)
TC=25C
9mA
8mA
7mA6mA
5mA
4mA
3mA
2mA
1mA
IB=10mA
0
1.2
1.0
0.8
0.6
0.4
0.2
0 122 104 86
Base current IB (mA)
CollectorcurrentIC
(A)
VCE=10V
Ta=25C
0.001
0.01
0.1
1
0.01 0.1 1
Collector-em
ittersaturationvoltageVCE(sat)
(V)
Collector current IC (A)
IC/IB=10
25C
25C
TC=100C
0.010.01 10.1
0.1
1
10
Base-emittersaturationvoltageVBE(sat)
(V)
Collector current IC (A)
IC/IB=10
TC=25C
25C
100C
0.01 10.11
10
100
1000
Forw
ardcurrenttransferratio
hFE
Collector current IC (A)
VCE=10V
TC=100C
25C
25C
1 10 1000
40
80
120
200
160
TransitionfrequencyfT(MHz
)
Emitter current IE(mA
)
VCB=10V
f=200MHz
TC=25C
1 10 1000
50
40
30
20
10
Collectoroutputcapacitance
(Commonbase,inputopencircuited)
Cob
(pF)
Collector-base voltage VCB
(V)
IE=0
f=1MHzTC=25C
0.1 1 10 1000
20
40
60
80
100
Base-emitter resistance RBE
(k)
Collector-emittervoltage
(ResistorbetweenBandE)VCER
(V)
IC=10mA
TC=25C
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ICEOTa Safe operation area
1
10
102
103
104
0 16040 12080
ICBO
(Ta)
ICBO
(Ta
=2
5C)
Ambient temperature Ta (C)
VCE=10V
0.0010.1
0.01
0.1
1
10
1 10 100
CollectorcurrentIC
(A)
Collector-emitter voltage VCE (V)
Single pulse
TC=25C
t=10ms
ICP
IC
t=1s
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
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tual property right or any other rights owned by our company or a third party, nor grants any license.
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product or technologies as described in this material.
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electronic equipment (such as office equipment, communications equipment, measuring instru-ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
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