2sc1846

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    Power Transistors

    2SC1846

    Silicon NPN epitaxial planar type

    For medium output power amplification

    Complementary to 2SA0885

    Features

    Low collector-emitter saturation voltage VCE(sat) Output of 3 W can be obtained by a complementary pair with

    2SA0885

    TO-126B package which requires no insulation plate for installa-

    tion to the heat sink

    Absolute Maximum Ratings Ta=25C

    Electrical Characteristics Ta=25C 3C

    Unit: mm

    Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

    2. *: Rank classification

    Parameter Symbol Conditions Min Typ Max Unit

    Collector-base voltage (Emitter open) VCBO IC=1 mA, IE=0 45 V

    Collector-emitter voltage (Base open) VCEO IC=2 mA, IB=0 35 V

    Collector-base cutoff current (Emitter open) ICBO VCB=20 V, IE=0 0.1 A

    Collector-emitter cutoff current (Base open) ICEO

    VCE

    =20 V, IB=0 100 A

    Emitter-base cutoff current (Collector open) IEBO VEB=5 V, IC=0 10 A

    Forward current transfer ratio hFE1* VCE=10 V, IC=500 mA 85 340

    hFE2 VCE=5 V, IC=1 A 50

    Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB=50 mA 0.5 V

    Transition frequency f T VCB=10 V, IE=50 mA, f =200 MHz 200 MHz

    Collector output capacitance Cob VCB=10 V, IE=0, f =1 MHz 20 pF

    (Common base, input open circuited)

    1: Emitter

    2: Collector

    3: Base

    TO-126B-A1 Package

    8.0+0.50.1

    1.

    90.

    1

    3.

    050.

    1

    3.

    80.

    3

    11.

    00.

    5

    16.

    01.

    0

    3.20.2

    0.750.10.50.1

    2.30.24.60.2

    0.50.1 1.760.1

    1 2 3

    3.160.1

    Rank Q R S

    hFE1 85 to 170 120 to 240 170 to 340

    Parameter Symbol Rating Unit

    Collector-base voltage (Emitter open) VCBO 45 V

    Collector-emitter voltage (Base open) VCEO 35 V

    Emitter-base voltage (Collector open) VEBO 5 V

    Collector current IC 1 A

    Peak collector current ICP 1.5 A

    Collector power dissipation PC 1.2 W

    5.0 *

    Junction temperature Tj

    150 C

    Storage temperature Tstg 55 to+150 C

    Note) *: With a 100 100 2 mm Al heat sink

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    2SC1846

    PCTa ICVCE ICIB

    VCE(sat)IC VBE(sat)IC hFEIC

    fTIE CobVCB VCERRBE

    0

    6

    5

    4

    3

    2

    1

    0 20040 80 160120

    Collectorpowerdissipati

    onPC

    (W)

    Ambient temperature Ta (C)

    (1)With a 1001002mm

    Al heat sink

    (2)Without heat sink

    (1)

    (2)

    0

    1.50

    1.25

    1.00

    0.75

    0.50

    0.25

    0 102 4 86

    CollectorcurrentIC(A)

    Collector-emitter voltage VCE (V)

    TC=25C

    9mA

    8mA

    7mA6mA

    5mA

    4mA

    3mA

    2mA

    1mA

    IB=10mA

    0

    1.2

    1.0

    0.8

    0.6

    0.4

    0.2

    0 122 104 86

    Base current IB (mA)

    CollectorcurrentIC

    (A)

    VCE=10V

    Ta=25C

    0.001

    0.01

    0.1

    1

    0.01 0.1 1

    Collector-em

    ittersaturationvoltageVCE(sat)

    (V)

    Collector current IC (A)

    IC/IB=10

    25C

    25C

    TC=100C

    0.010.01 10.1

    0.1

    1

    10

    Base-emittersaturationvoltageVBE(sat)

    (V)

    Collector current IC (A)

    IC/IB=10

    TC=25C

    25C

    100C

    0.01 10.11

    10

    100

    1000

    Forw

    ardcurrenttransferratio

    hFE

    Collector current IC (A)

    VCE=10V

    TC=100C

    25C

    25C

    1 10 1000

    40

    80

    120

    200

    160

    TransitionfrequencyfT(MHz

    )

    Emitter current IE(mA

    )

    VCB=10V

    f=200MHz

    TC=25C

    1 10 1000

    50

    40

    30

    20

    10

    Collectoroutputcapacitance

    (Commonbase,inputopencircuited)

    Cob

    (pF)

    Collector-base voltage VCB

    (V)

    IE=0

    f=1MHzTC=25C

    0.1 1 10 1000

    20

    40

    60

    80

    100

    Base-emitter resistance RBE

    (k)

    Collector-emittervoltage

    (ResistorbetweenBandE)VCER

    (V)

    IC=10mA

    TC=25C

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    2SC1846

    ICEOTa Safe operation area

    1

    10

    102

    103

    104

    0 16040 12080

    ICBO

    (Ta)

    ICBO

    (Ta

    =2

    5C)

    Ambient temperature Ta (C)

    VCE=10V

    0.0010.1

    0.01

    0.1

    1

    10

    1 10 100

    CollectorcurrentIC

    (A)

    Collector-emitter voltage VCE (V)

    Single pulse

    TC=25C

    t=10ms

    ICP

    IC

    t=1s

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    Request for your special attention and precautions in using the technical informationand semiconductors described in this material

    (1) An export permit needs to be obtained from the competent authorities of the Japanese Government

    if any of the products or technologies described in this material and controlled under the "Foreign

    Exchange and Foreign Trade Law" is to be exported or taken out of Japan.

    (2) The technical information described in this material is limited to showing representative characteris-

    tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-

    tual property right or any other rights owned by our company or a third party, nor grants any license.

    (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the

    product or technologies as described in this material.

    (4) The products described in this material are intended to be used for standard applications or general

    electronic equipment (such as office equipment, communications equipment, measuring instru-ments and household appliances).

    Consult our sales staff in advance for information on the following applications:

    Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,

    combustion equipment, life support systems and safety devices) in which exceptional quality and

    reliability are required, or if the failure or malfunction of the products may directly jeopardize life or

    harm the human body.

    Any applications other than the standard applications intended.

    (5) The products and product specifications described in this material are subject to change without

    notice for modification and/or improvement. At the final stage of your design, purchasing, or use of

    the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that

    the latest specifications satisfy your requirements.

    (6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-

    mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-

    wise, we will not be liable for any defect which may arise later in your equipment.

    Even when the products are used within the guaranteed values, take into the consideration of

    incidence of break down and failure mode, possible to occur to semiconductor products. Measures

    on the systems such as redundant design, arresting the spread of fire or preventing glitch are

    recommended in order to prevent physical injury, fire, social damages, for example, by using the

    products.

    (7) When using products for which damp-proof packing is required, observe the conditions (including

    shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets

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    (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written

    permission of Matsushita Electric Industrial Co., Ltd.

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