detector desy for the european xfel. heinz graafsma; head of fs-ds; desy-hamburg aida-workshop;...
DESCRIPTION
H. Graafsma | AIDA-Workshop; March 2012| Page 3 E-XFEL Challenge: Time structure = difference with “others” 600 s 99.4 ms 100 ms 220 ns FEL process X-ray photonsTRANSCRIPT
Detector Developments @ DESY for the European XFEL.
Heinz Graafsma; Head of FS-DS; DESY-HamburgAIDA-Workshop; Hamburg; March 2012
H. Graafsma | AIDA-Workshop; March 2012| Page 2
Challenge: Different Science
• Completely new science
• Fast science 100 fsec
• “Single shot” science
x109
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E-XFEL Challenge: Time structure = difference with “others”
600 s99.4 ms
100 ms 100 ms
220 ns
FELprocess
X-ray photons<100 fs
Electron bunch trains; up to 2700 bunches in 600 sec, repeated 10 times per second.Producing 100 fsec X-ray pulses (up to 27 000 bunches per second).
27 000 bunches/sBut with
4.5 MHz rep rate
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Single shot imaging…
K. J. Gaffney and H. N. Chapman, Science 8 June 2007
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XFEL Detector requirements
4.5 MHz
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The AGIPD Project
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The Adaptive Gain Integrating Pixel DetectorThe AGIPD consortium:PSI/SLS -Villingen: chip design; interconnect and module assembly
Universität Bonn: chip design
Universität Hamburg: radiation damage tests, “charge explosion” studies; and sensor design
DESY: chip design, interface and control electronics, mechanics, cooling; overall coordination
Some Facts6 years development
~ 20 people
Some MilestonesFirst 16x16 pixels prototype End 2010
Definition of final design Summer 2011
Production, assembly and test >2013
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The Adaptive Gain Integrating Pixel Detector
C1
Leakage comp.
C2
C3
Discr.
Cont
rol l
ogic
TrimDAC
Vthr VADCmax
Anal
ogue
en
codi
ngNormal Charge sensitive amplifier
High dynamic range:
Dynamically gain switching systemExtremely fast readout (200ns):
Analogue pipeline storage
0,0
0,2
0,4
0,6
0,8
1,0
1,2
1,4
1,6
1,8
0 5000 10000 15000Number of 12.4 KeV - Photons
Out
put V
olta
ge [V
]
Cf=100fF Cf=1500fF Cf=4800fF
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The Adaptive Gain Integrating Pixel Detector
C1
Leakage comp.
C2
C3
Discr.
Cont
rol l
ogic
TrimDAC
Vthr VADCmax
Anal
ogue
en
codi
ng
Readout amp.
3 levels
Filter/write amp.
Analogue pipeline
Filter/write amp. C1 Cn
High dynamic range:
Dynamically gain switching systemExtremely fast readout (200ns):
Analogue pipeline storage
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AGIPD ASIC
Sensor ASIC per pixel
ASIC periphery
Chip output driver
Mux
HV
+-
THR
DACSWCTRL
Analog Mem
Analog Mem
CDS
RO Amp
Calibration circuitry
Adaptive gain amplifier
352 analog memory cells
……R
O b
us (p
er c
olum
n)
Pixel matrix
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Imaging with AGIPD 0.2 prototype
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The Adaptive Gain Integrating Pixel Detector
Connector to interfaceHDI Base plate
sensorchip wire bondbump bond
~ 2mm
~220 mm
1k x 1k (2k x 2k)
64 x 64 pixels
Basic parametersBasic parameters•1 Megapixel detector (1k 1 Megapixel detector (1k 1k) 1k)•200200m m 200 200m pixelsm pixels•Flat detectorFlat detector •Sensor: Sensor: Silicon 128 x 512 Silicon 128 x 512 pixelpixel tiles tiles•Single shot 2D-imaging Single shot 2D-imaging •4.5 MHz frame rate4.5 MHz frame rate•2 2 10 1044 photons dynamic range photons dynamic range•Adaptive gain switching Adaptive gain switching •Single photon sensitivity at 12keVSingle photon sensitivity at 12keV•Noise Noise 300e300e•Storage depth Storage depth 350 images350 images•Analogue readout between bunch-trainsAnalogue readout between bunch-trains
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Germanium pixel detector
> Germanium pros and cons: High absorption efficiency
Large, high-quality wafers available
But requires cooling, delicate
> Sensor production at Canberra Modification of strip detector technology
> Bump bonding at Fraunhofer IZM Indium bump process required
> Readout and mechanics at DESY Expected ≥ -70°C operation
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The DSSC Project
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DSSC - DEPMOS Sensor with Signal Compression
> MPI-HLL, Munich
> Universität Heidelberg
> Universität Siegen
> Politecnico di Milano
> Università di Bergamo
> DESY, Hamburg
>Hexagonal pixels 200m pitch
• combines DEPFET
• with small area drift detector (scaleable)
> DEPFET per pixel
> Very low noise (good for soft X-rays)
> non linear gain (good for dynamic range)
> per pixel ADC
> digital storage pipeline
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Output voltage as function of charge
injected charge
DEPMOS Sensor with Signal Compression DEPFET: Electrons are collected in a storage well
⇒Influence current from source to drain
source draingate
Fully depleted silicone-
Storage well
injected charge
DSSC
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The PERCIVAL Project
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PERCIVAL (Pixelated Energy Resolving CMOS Imager, Versatile and Large) X-X-ray Imaging MAPS for (X)FELs and Synchrotrons
> Ongoing development project between DESY and RAL / STFC
> Aim: to develop X-ray imager for FLASH, soft X-ray beams at PETRA III, and for the use of CFEL scientists at other facilities
> Sensor developed at RAL, Readout developed at DESY (+ ELETTRA) Only digital information coming off the chip
Readout development build upon / re-use XFEL and AGIPD developments already done on-site
Project timeline First small test sensors in hand ~ mid-2012
Full system by ~ end 2013
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PERCIVAL project
photodiodes
embedded circuitry
handling wafer
backthinned (~12um) epi Si
board
e-
• Primary energy range 250 eV – 1 keV (will work from <200 eV to few keV)• 12 m Si sensitive volume with 25 m pixels 4k × 4k pixel sensor• 4 sensors in cloverleaf arrangement can make up 64 Mpixel (20cm x 20cm)• back-illuminated, back-thinned for uniform QE > 90%• 120 Hz frame rate and lower • 2-side buttable (space between active pixel edges on the order of 1mm)• electronic noise < 15e-, “full well” ~ 20 Me-• Multi-gain approach to access full dynamic range,
all gains active all the time
Aspired performance parameters:
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Board : Readout & Control
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Summary
>Free-Electron-Lasers are driving detector technology developments
>Solid-state (silicon+germanium) detectors
>3 projects ongoing at DESY for FELS: Adaptive Gain Integrating Pixel Detector (AGIPD)
DEPMOS Sensor with Signal Compression (DSSC)
Pixelated Energy Resolving CMOS Imager, Versatile and Large (PERCIVAL)
>Advanced technologies like 3D-ASIC integration will be needed in order to fully utilize the FEL capabilities.